SHINDENGEN

Bridge Diode Square In-line Package

OUTLINE DIMENSIONS
S4VB20 Case : S4VB
Unit : mm

200V 4A

RATINGS
●　Absolute Maximum Ratings
Item Symbol Conditions Ratings Unit
Storage Temperature Tstg -40～150 ℃
Operating Junction Temperature Tj 150 ℃
Maximum Reverse Voltage VRM 200 V
Average Rectified Forward Current IO 50Hz sine wave, R-load, Ta=40℃ With heatsink θfa=10℃/W 4 A
50Hz sine wave, R-load, Ta=40℃ Without heatsink 2.6
Peak Surge Forward Current IFSM 50Hz sine wave, Non-repetitive 1cycle peak value, Tj=25℃ 80 A
Current Squared Time I2t 1ms≦t＜10ms　Ｔc=25℃ 32 A2ｓ
Mounting Torque TOR （Recommended torque : 0.5N･m） 0.8 N･m

●　Electrical Characteristics (Tl=25℃)

Item Symbol Conditions Ratings Unit
Forward Voltage VF IF=2A, Pulse measurement, Rating of per diode Max.1.05 V
Reverse Current IR VR=VRM, Pulse measurement, Rating of per diode Max.10 μA
Thermal Resistance θjl junction to lead 　 Max.4.5 ℃/W

Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd

 S4VBx Forward Voltage

10
Forward Current IF [A]

Tl=150°C [TYP]

Tl=25°C [TYP]

Pulse measurement per diode

0.4 0.6 0.8 1 1.2 1.4

Forward Voltage VF [V]

 S4VBx Forward Power Dissipation
12

10 SIN
Forward Power Dissipation PF [W]

0
0 1 2 3 4 5 6

Average Rectified Forward Current IO [A]

Tj = 150°C
Sine wave
 S4VBx Derating Curve
5
Average Rectified Forward Current IO [A]

* θfa = 10°C/W
4 l

3
l=25mm

l=15mm

2 l= 5mm
without heatsink

0
0 20 40 60 80 100 120 140 160

Ambient Temperature Ta [°C]

Sine wave
R-load
Free in air
* with thermal compound, TOR=3kg-cm
 S4VBx Peak Surge Forward Capability
100

IFSM
10ms 10ms
1 cycle
non-repetitive,
80 sine wave,
Tj=25°C before
surge current is applied
Peak Surge Forward Current IFSM [A]

60

40

20

0
1 2 5 10 20 50 100

Number of Cycles [cycles]