Experiment - 04

AIM:- To draw i-V characteristic curves for junction diode in forward and reverse biading.

APPARATUS REQUIRED :- Junction diode (or transistor), milliammeter, microammeter, voltmeter,

rheostat, plug key and 6- volt battery.

PRINCIPLE :- To form a P-N junction, a P-type crystal is jointed with a N-type crystal by a special
method. In the N-type crystal the charge carriers are electrons while in P-type crystal the charge
carriers are the holes. The mobility of holes is small as compare to that of electrons. In the absence of
external battery, no current flows through the junction. (Fig. 1a). When a transistor is used in place of
a junction diode, the one terminal of the transistor is left unconnected (Fig. 1b).

CIRCUIT DIAGRAM:- The p-n junction diode can be connected across an external battery in two ways:
1. Forward Biasing: In which the positive terminal of external battery is connected to P-type crystal and
negative terminal of battery to N-type crystal of the diode (Fig. 2).

2. Reverse Biasing:- In which the positive terminal of the external battery is connected to N-type crystal
and the negative terminal of the battery to P-type crystal of the diodle.

Observations:-
Forward Biasing Reverse Biasing
S. No.
Applied Voltage V (Volts) Current (i) (In mA) Applied Voltage V (Volts) Current I (in 𝝁𝑨)
1.
2.
3.
4.
RESULT :- The V-I Curves for both the cases are shown in Fig.
PRECAUTIONS:-
1. In the forward biasing, the voltage applied should be very much low so that junction may not
damage.
2. Current in the diode or transistor should not be passed for long time, otherwise it will burn.