fares IRFP 450/Fl-451/Fl IRFP 452/Fl-453/F1 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE Voss Rosion) Ip" IRFP450 500 V 0.49 140 IRFP450FI_| 500 V 0.49 9A IRFP451 450 V 0.49 14 A IRFP451FI | 450 V 049 9A IRFP452 500 V 052 12A IRFP452FI | 500 V 0.59 BA IRFP453 450 V 0.59 12A IRFP453FI | 450 V 0.5 9 8A * HIGH VOLTAGE - 450V FOR OFF LINE SMPS * HIGH CURRENT - 12A FOR UP TO 350W SMPS Ya TO-218 ISOWATT218 * ULTRA FAST SWITCHING - FOR OPERATION AT > 100 KHz * EASY DRIVE - REDUCES COST AND SIZE INDUSTRIAL APPLICATIONS: INTERNAL SCHEMATIC 2 * SWITCHING MODE POWER SUPPLIES DIAGRAM * MOTOR CONTROLS N-channel enhancement mode POWER MOS field effect transistors. Easy drive and very fast switch- 6O ing times make these POWER MOS transistors ideal for high speed switching applications. 5 ABSOLUTE MAXIMUM RATINGS IRFP. TO-218 450 451 452 453 ISOWATT218 450FI_451FI_ 452FI__453F1 Vos *_ _ Drain-source voltage (Vas = 0) 500 450 500 450 Vv Vper * _Drain-gate voltage (Reg =20 K®) 500 450 500 450 v Ves. Gate-source voltage #20 v low (*) Drain current (pulsed) 56 56 48 48 A lou Drain inductive current, clamped (L= 100 xH) 56 564848 A 450 451 452 453 Ip Drain current (cont.) at T, 25°C 14 14 12 12 A Ip Drain current (cont) at T;= 100°C 88 88 79 79 A 450Fl 451Fl 452Fl 453FI ips Drain current (cont) at T,= 25°C 9 9 8 8 A lp" Drain current (cont.) at T,= 100°C 56 56 5 5 A TO-218 ISOWATT218 Pig" Total dissipation at T, <25°C 180 70 w Derating factor 1.44 0.55 wee Tstg _ Storage temperature —55 to 150 °c tT Max. operating junction temperature 150 °c T= 25°C to 125°C (+) Repetitive Rating: Pulse width limited by max junction temperature. See note on ISOWATT218 on this datasheet. June 1988 116 355IRFP 450/FI - 451/FI - 452/Fl - 453/FI THERMAL DATA® To-218 | ISOWATT218 Fin - case Thermal resistance junction-case max 0.69! 1.8 cw Ries Thermal resistance case-sink typ 0.1 ecw Rinane Thermal resistance junction-ambient max 30 ecw i"? Maximum lead temperature for soldering purpose 300 °C ELECTRICAL CHARACTERISTICS (T,,9=25°C unless otherwise specified) — Parameters Test Conditions Min. | Typ. |Max. | Unit OFF Ver) oss Drain-source p= 250 A Vag= 0 breakdown voltage | for IRFP450/452/450F1/452F1 500 v for IRFP451/459/451F1/453Fl 450 v Ings Zero gate voltage _| Vog= Max Rating 250 | nA drain current (V@g~=0) | Vpg= Max Rating x 0.8 T,= 125°C 1000) wA lass Gate-body leakage | Vag= +20V £500] nA current (Vg =0) ON’: Ves qn Gate threshold voltage] Vos= Vos [p= 250 pA 2 afv Toor) Orrstate drain current | Vog> lo (on X Rogion) mex Vos = 10 V for IRFP450/451/450F1/451F| 4 A for IRFP452/453/452F1/453F1 12 A Ros (on) Static drain-source | Vg= 10 V Ip= 79 A on resistance for IRFP450/451/450F1/451Fi o4 | o for IRFP452/453/452F1/453F os | 2 DYNAMIC Gis ** Forward Vps> 'p (on) * Ros (on) max 9.3 mho transconductance Ip= 7.9 RB Gj, Input capacitance 3000 | pF Ces, Output capacitance | Vpgs= 25 V f= 1 MHz 600 | pF Cro Reverse transfer Ves= 0 200 | pF capacitance SWITCHING ta(en) __Turn-on time 210V p= 7.0A 35 | ns t Rise time R= 4.79 50 | ns tym Turn-off delay time (see test circuit) 150 | ns ty Fall time 70 | ns Q, Total Gate Charge | Vgg= 10 V [p= 13 A 120 | no Max Rating x 0.8 (see test circuit) 26 356 GT. SScTONSENIRFP 450/Fl - 451/Fl - 452/Fl - 453/FI ELECTRICAL CHARACTERISTICS (Continued) Parameters Test Conditions Min. | Typ. | Max. | Unit SOURCE DRAIN DIODE Isp. Source-drain current 14] A Isom (?) Source-drain current 56 | A (pulsed) Vsp Forward on voltage | Isp= 14 Ves= 0 14] ov ter Reverse recovery 150°C 1300 ns time Q, Reverse recovered | Ign = 14 A difdt = 100 Aus 74 uC charge ** Pulsed: Pulse duration < 300 ps, duty cycle < 1.5% (*) Repetitive Rating: Pulse width limited by max junction temperature ™ See note on ISOWATT218 in this datasheet Safe operating areas Thermal impedance Derating curve (standard package) (standard package) (standard package) Wee su Pret ICL sr eg ge Output characteristics Output characteristics Transfer characteristics “Ty i : ae SL STONE ——_£§_——_———IRFP 450/FI - 451/FI - 452/Fl - 453/F1 Transconductance Static drain-source on Maximum drain current vs resistance temperature 9665 Mase wa ® {pe LC . rans u— ° vee a t lereszass 4 ‘esol FSoea. a wo I ° a a 5 ST Gate charge vs gate-source voltage ve a 7 eal a Normalized on resistance vs temperature stay Source-drain diode forward characteristics lt Tes w Thy 45 “8 0 310) 416 358 Normalized breakdown voltage vs temperature Yaross trot 05 | ~ oss eTClamped inductive test circuit any t 10 o8tan ts Be a E205 BVpss F20.75 BVoss Switching times test circuit ADJUST To O8TAN SPECIFIED by Vos ouT seme IRFP 450/Fl - 451/Fl - 452/Fl - 453/F1 Clamped inductive waveforms Gate charge test circuit 9 Vos CURRENT REGULATOR $0 SAME TYPE nw CURRENT. ‘CURRENT SAMPLING SAMPLING RESISTOR RESISTOR sce SGS-THOMSON YA, iutnnelecTADAIC 359IRFP 450/Fl - 451/FI - 452/FI - 453/F1 ISOWATT218 PACKAGE CHARACTERISTICS AND APPLICATION. ISOWATT218is fully isolated to 4000V de. Its ther- mal impedance, given in the data sheet, is optimi- sed to give efficient thermal conduction together with excellent electrical isolation. The structure of the case ensures optimum distan- ces between the pins and heatsink. These distan- ces are in agreement with VDE and UL creepage and clearance standards. The ISOWATT218 pac- kage eliminates the need for external isolation so reducing fixing hardware. The package is supplied with leads longer than the standard TO-218 to allow easy mounting on pbs. Accurate moulding techniques used in manufac- ture assures consistent heat spreader-to-heatsink capacitance ISOWATT218 thermal performance is better than that of the standard part, mounted with a 0.1mm mica washer. The thermally conductive plastic has a higher breakdown rating and is less fragile than mica or plastic sheets. Power derating for ISOWATT218 packages is determined by: TZ- from this Ipmax for the POWER MOS can be cal- culated: Fomax$ Fsion) (at 180°C) ISOWATT DATA Safe operating areas a Hl ® yt 6/6 360 4 4. Thermal impedance THERMAL IMPEDANCE OF ISOWATT218 PACKAGE Fig. 1 illustrates the elements contributing to the thermal resistance of transistor heatsink assembly, using ISOWATT218 package. The total thermal resistance Ry, gor is the sum of each of these elements. The transient thermal impedance, Zy, for different pulse durations can be estimated as follows: 1- fora short duration power pulse less than 1ms; Zins Prec 2- for an intermediate power pulse of Sms to 50ms: Zn= Pinsc 3 - for long power pulses of the order of 500ms or greater: Zn= Pinsc + Rincs + Pinsamo Itis often possibile to discern these areas on tran- sient thermal impedance curves. Fig. 1 Rensc Renc-Hs Reneis-amb wn nn Derating curve Pot T TT fd * we Tan SGS-THOMSON ACADELEEVRORNCS