PD - 97308C

IRFB3607PbF
IRFS3607PbF
Applications
l High Efficiency Synchronous Rectification in
IRFSL3607PbF
SMPS HEXFET® Power MOSFET
l Uninterruptible Power Supply
l High Speed Power Switching
D
VDSS 75V
l Hard Switched and High Frequency Circuits
RDS(on) typ. 7.34m :
G max. 9.0m :
Benefits S ID 80A
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and D D
D
Avalanche SOA
l Enhanced body diode dV/dt and dI/dt
Capability S
S S D
D G G
G
TO-220AB D2Pak TO-262
IRFB3607PbF IRFS3607PbF IRFSL3607PbF

G D S
Gate Drain Source

Absolute Maximum Ratings

Symbol Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 80c
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 56c A
IDM Pulsed Drain Current d 310
PD @TC = 25°C Maximum Power Dissipation 140 W
Linear Derating Factor 0.96 W/°C
VGS Gate-to-Source Voltage ± 20 V
TJ Operating Junction and -55 to + 175 °C
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300
(1.6mm from case)
Mounting torque, 6-32 or M3 screw x
10lb in (1.1N m) x
Avalanche Characteristics
EAS (Thermally limited) Single Pulse Avalanche Energy e 120 mJ
IAR Avalanche Current c 46 A
EAR Repetitive Avalanche Energy g 14 mJ

Thermal Resistance
Symbol Parameter Typ. Max. Units
R JC Junction-to-Case k ––– 1.045
R CS Case-to-Sink, Flat Greased Surface, TO-220 0.50 ––– °C/W
R JA Junction-to-Ambient, TO-220 j ––– 62
R JA Junction-to-Ambient (PCB Mount) , D Pak
2
jk ––– 40

www.irf.com 1
01/20/12
IRFB/S/SL3607PbF

Static @ TJ = 25°C (unless otherwise specified)

Symbol Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 75 ––– ––– V VGS = 0V, ID = 250μA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.096 ––– V/°C Reference to 25°C, ID = 5mA d
R DS(on) Static Drain-to-Source On-Resistance ––– 7.34 9.0 m VGS = 10V, ID = 46A g
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 100μA
IDSS Drain-to-Source Leakage Current ––– ––– 20 μA VDS = 75V, VGS = 0V
––– ––– 250 VDS = 60V, VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 115 ––– ––– S VDS = 50V, ID = 46A
Qg Total Gate Charge ––– 56 84 nC ID = 46A
Qgs Gate-to-Source Charge ––– 13 ––– VDS = 38V
Qgd Gate-to-Drain ("Miller") Charge ––– 16 ––– VGS = 10V g
Qsync Total Gate Charge Sync. (Qg - Qgd) ––– 40 ––– ID = 46A, VDS =0V, VGS = 10V
R G(int) Internal Gate Resistance ––– 0.55 ––– 
td(on) Turn-On Delay Time ––– 16 ––– ns VDD = 49V
tr Rise Time ––– 110 ––– ID = 46A
td(off) Turn-Off Delay Time ––– 43 ––– R G = 6.8
tf Fall Time ––– 96 ––– VGS = 10V g
C iss Input Capacitance ––– 3070 ––– pF VGS = 0V
C oss Output Capacitance ––– 280 ––– VDS = 50V
C rss Reverse Transfer Capacitance ––– 130 ––– ƒ = 1.0MHz
C oss eff. (ER) Effective Output Capacitance (Energy Related) j ––– 380 ––– VGS = 0V, VDS = 0V to 60V j
C oss eff. (TR) Effective Output Capacitance (Time Related) h ––– 610 ––– VGS = 0V, VDS = 0V to 60V h
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current ––– ––– 80 c A MOSFET symbol D

(Body Diode) showing the

ISM Pulsed Source Current ––– ––– 310 integral reverse G

(Body Diode) d p-n junction diode. S

VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 46A, VGS = 0V g
dv/dt Peak Diode Recovery ––– 27 ––– V/ns TJ = 175°C, IS = 46A, VDS = 75V f
trr Reverse Recovery Time ––– 33 50 ns TJ = 25°C VR = 64V,
––– 39 59 TJ = 125°C IF = 46A
Qrr Reverse Recovery Charge ––– 32 48 nC TJ = 25°C di/dt = 100A/μs g
––– 47 71 TJ = 125°C
IRRM Reverse Recovery Current ––– 1.9 ––– A TJ = 25°C
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:
 Calculated continuous current based on maximum allowable junction
temperature. Note that current limitations arising from heating of the
device leads may occur with some lead mounting arrangements.
‚ Repetitive rating; pulse width limited by max. junction
temperature.
ƒ Limited by TJmax, starting TJ = 25°C, L = 0.12mH
RG = 25, IAS = 46A, VGS =10V. Part not recommended for use
above this value.
„ ISD  46A, di/dt  1920A/μs, VDD V(BR)DSS, TJ  175°C.
… Pulse width  400μs; duty cycle  2%.
† Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS .
‡ Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
ˆ When mounted on 1" square PCB (FR-4 or G-10 Material). For recom-
mended footprint and soldering techniques refer to application note #AN-994.
‰ Ris measured at TJ approximately 90°C.

2 www.irf.com
 IRFB/S/SL3607PbF
1000 1000
VGS VGS
TOP 15V TOP 15V
10V 10V
8.0V 8.0V

ID, Drain-to-Source Current (A)

ID, Drain-to-Source Current (A)

6.0V 6.0V
5.5V 5.5V
5.0V 5.0V
100 4.8V 4.8V
BOTTOM 4.5V BOTTOM 4.5V

100

4.5V
10
4.5V

60μs PULSE WIDTH 60μs PULSE WIDTH

Tj = 25°C Tj = 175°C
1 10
0.1 1 10 100 0.1 1 10 100
V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

1000 3.0
ID = 80A

RDS(on) , Drain-to-Source On Resistance

VGS = 10V
ID, Drain-to-Source Current (A)

2.5
100

2.0
(Normalized)

T J = 175°C
10 T J = 25°C

1.5

1
1.0
VDS = 25V
60μs PULSE WIDTH
0.1 0.5
2 3 4 5 6 7 8 -60 -40 -20 0 20 40 60 80 100120140160180
T J , Junction Temperature (°C)
VGS , Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature

100000 12.0
VGS = 0V, f = 1 MHZ
ID= 46A
Ciss = Cgs + Cgd, C ds SHORTED
Crss = Cgd 10.0
VGS , Gate-to-Source Voltage (V)

VDS= 24V
Coss = Cds + Cgd
VDS= 15V
C, Capacitance (pF)

10000 8.0

Ciss 6.0

Coss
1000 4.0
Crss
2.0

100 0.0
1 10 100 0 10 20 30 40 50 60
VDS, Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC)

Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
www.irf.com 3
 IRFB/S/SL3607PbF
1000 1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)

ID, Drain-to-Source Current (A)

ISD, Reverse Drain Current (A)

100
100μsec
T J = 175°C 100
1msec

10
T J = 25°C
10msec
10
1
Tc = 25°C
Tj = 175°C
VGS = 0V Single Pulse DC

0.1 1
0.0 0.5 1.0 1.5 2.0 1 10 100
VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area

V(BR)DSS , Drain-to-Source Breakdown Voltage (V)

80 100
Id = 5mA
70
95
60
ID, Drain Current (A)

90
50

40 85

30
80
20
75
10

0 70
25 50 75 100 125 150 175 -60 -40 -20 0 20 40 60 80 100120140160180
T C , Case Temperature (°C) T J , Temperature ( °C )

Fig 9. Maximum Drain Current vs. Case Temperature Fig 10. Drain-to-Source Breakdown Voltage

1.20 500
ID
EAS , Single Pulse Avalanche Energy (mJ)

450
1.00 TOP 5.6A
400 11A
BOTTOM 46A
350
0.80
300
Energy (μJ)

0.60 250

200
0.40
150

100
0.20
50
0.00 0
-10 0 10 20 30 40 50 60 70 80 25 50 75 100 125 150 175

VDS, Drain-to-Source Voltage (V) Starting T J , Junction Temperature (°C)

Fig 11. Typical COSS Stored Energy Fig 12. Maximum Avalanche Energy vs. DrainCurrent
4 www.irf.com
 IRFB/S/SL3607PbF
10.00

Thermal Response ( Z thJC ) °C/W

1.00
D = 0.50

0.20
0.10 0.10 R1
R1
R2
R2
R3
R3
R4
R4
Ri (°C/W) i (sec)
0.05 J C 0.01109 0.000003
J 
1 0.26925 0.000130
0.02 1
2 3 4
2 3 4
0.01 0.49731 0.001301
0.01 Ci= iRi
Ci iRi
0.26766 0.008693
Notes:
SINGLE PULSE
1. Duty Factor D = t1/t2
( THERMAL RESPONSE )
2. Peak Tj = P dm x Zthjc + Tc
0.00
1E-006 1E-005 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)

Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case

1000

Duty Cycle = Single Pulse

Allowed avalanche Current vs avalanche
100 pulsewidth, tav, assuming Tj = 150°C and
Avalanche Current (A)

Tstart =25°C (Single Pulse)

0.01

10 0.05
0.10

1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming  j = 25°C and
Tstart = 150°C.
0.1
1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)
Fig 14. Typical Avalanche Current vs.Pulsewidth

150 Notes on Repetitive Avalanche Curves , Figures 14, 15:

TOP Single Pulse (For further info, see AN-1005 at www.irf.com)
BOTTOM 1.0% Duty Cycle 1. Avalanche failures assumption:
125 ID = 46A Purely a thermal phenomenon and failure occurs at a temperature far in
EAR , Avalanche Energy (mJ)

excess of Tjmax. This is validated for every part type.

2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
100
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
75
during avalanche).
6. Iav = Allowable avalanche current.
50 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
25 D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)

0
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
25 50 75 100 125 150 175
Iav = 2DT/ [1.3·BV·Zth]
Starting T J , Junction Temperature (°C) EAS (AR) = PD (ave)·tav

Fig 15. Maximum Avalanche Energy vs. Temperature

www.irf.com 5
IRFB/S/SL3607PbF
4.5 20
IF = 31A
VGS(th) , Gate Threshold Voltage (V)

4.0 V R = 64V

15 TJ = 25°C
3.5
TJ = 125°C

3.0

IRR (A)
10
2.5 ID = 100μA
ID = 250μA
2.0 ID = 1.0mA
5
ID = 1.0A
1.5

1.0 0
-75 -50 -25 0 25 50 75 100 125 150 175 200 0 200 400 600 800 1000
T J , Temperature ( °C ) diF /dt (A/μs)

Fig 16. Threshold Voltage vs. Temperature Fig. 17 - Typical Recovery Current vs. dif/dt

20 560
IF = 46A IF = 31A
V R = 64V 480 V R = 64V

15 TJ = 25°C TJ = 25°C
400
TJ = 125°C TJ = 125°C

320
Q RR (A)
IRR (A)

10
240

160
5

80

0 0
0 200 400 600 800 1000 0 200 400 600 800 1000
diF /dt (A/μs) diF /dt (A/μs)

Fig. 18 - Typical Recovery Current vs. dif/dt Fig. 19 - Typical Stored Charge vs. dif/dt

560
IF = 46A
480 V R = 64V
TJ = 25°C
400
TJ = 125°C

320
Q RR (A)

240

160

80

0
0 200 400 600 800 1000
diF /dt (A/μs)

Fig. 20 - Typical Stored Charge vs. dif/dt

6 www.irf.com
 IRFB/S/SL3607PbF
Driver Gate Drive
P.W.
D.U.T P.W.
Period D=
Period
+

ƒ VGS=10V*
Circuit Layout Considerations
 Low Stray Inductance
Ground Plane
- Low Leakage Inductance D.U.T. ISD Waveform
Current Transformer
+
Reverse
‚ Recovery Body Diode Forward
-
„ + Current Current
- di/dt
D.U.T. VDS Waveform
Diode Recovery
 dv/dt
VDD

RG dv/dt controlled by RG VDD Re-Applied

Driver same type as D.U.T. + Voltage Body Diode Forward Drop
I SD controlled by Duty Factor "D" - Inductor Current
Inductor Curent
D.U.T. - Device Under Test

Ripple  5% ISD

* VGS = 5V for Logic Level Devices

Fig 20. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs

V(BR)DSS
15V
tp

L DRIVER
VDS

RG D.U.T +
V
- DD
IAS A
VGS
20V
tp 0.01
I AS

Fig 21a. Unclamped Inductive Test Circuit Fig 21b. Unclamped Inductive Waveforms

LD
VDS VDS
90%
+
VDD -

D.U.T 10%
VGS VGS
Pulse Width < 1μs
Duty Factor < 0.1% td(on) tr td(off) tf

Fig 22a. Switching Time Test Circuit Fig 22b. Switching Time Waveforms
Id
Vds

Vgs

L
VCC
DUT Vgs(th)
0
1K

Qgs1 Qgs2 Qgd Qgodr

Fig 23a. Gate Charge Test Circuit Fig 23b. Gate Charge Waveform
www.irf.com 7
IRFB/S/SL3607PbF
TO-220AB Package Outline (Dimensions are shown in millimeters (inches))

TO-220AB Part Marking Information

(;$03/( 7+,6,6$1,5)
/27&2'(
$66(0%/('21:: ,17(51$7,21$/ 3$57180%(5
,17+($66(0%/</,1(& 5(&7,),(5
/2*2
Note: "P" in assembly line
position indicates "Lead-Free" '$7(&2'(
$66(0%/< <($5 
/27&2'( :((.
/,1(&

TO-220AB packages are not recommended for Surface Mount Application.

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

8 www.irf.com
 IRFB/S/SL3607PbF
D2Pak (TO-263AB) Package Outline
Dimensions are shown in millimeters (inches)

D2Pak (TO-263AB) Part Marking Information

7+,6,6$1,5)6:,7+ 3$57180%(5
/27&2'( ,17(51$7,21$/
$66(0%/('21:: 5(&7,),(5 )6
,17+($66(0%/</,1(/ /2*2
'$7(&2'(
$66(0%/< <($5 
/27&2'( :((.
/,1(/

25
3$57180%(5
,17(51$7,21$/
5(&7,),(5 )6
/2*2 '$7(&2'(
3 '(6,*1$7(6/($')5((
352'8&7237,21$/
$66(0%/< <($5 
/27&2'( :((.
$ $66(0%/<6,7(&2'(

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
www.irf.com 9
IRFB/S/SL3607PbF
TO-262 Package Outline
Dimensions are shown in millimeters (inches)

TO-262 Part Marking Information

(;$03/( 7+,6,6$1,5//
/27&2'( 3$57180%(5
,17(51$7,21$/
$66(0%/('21::
5(&7,),(5
,17+($66(0%/</,1(& /2*2
'$7(&2'(
<($5 
$66(0%/<
/27&2'( :((.
/,1(&

25
3$57180%(5
,17(51$7,21$/
5(&7,),(5
/2*2
'$7(&2'(
3 '(6,*1$7(6/($')5((
$66(0%/<
/27&2'( 352'8&7237,21$/
<($5 
:((.
$ $66(0%/<6,7(&2'(

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10 www.irf.com
 IRFB/S/SL3607PbF

D2Pak (TO-263AB) Tape & Reel Information

Dimensions are shown in millimeters (inches)

TRR

1.60 (.063)
1.50 (.059)
1.60 (.063)
4.10 (.161) 1.50 (.059)
3.90 (.153) 0.368 (.0145)
0.342 (.0135)

FEED DIRECTION 1.85 (.073) 11.60 (.457)

1.65 (.065) 11.40 (.449) 24.30 (.957)
15.42 (.609)
23.90 (.941)
15.22 (.601)
TRL
1.75 (.069)
10.90 (.429) 1.25 (.049)
10.70 (.421) 4.72 (.136)
16.10 (.634) 4.52 (.178)
15.90 (.626)

FEED DIRECTION

13.50 (.532) 27.40 (1.079)

12.80 (.504) 23.90 (.941)

330.00 60.00 (2.362)

(14.173) MIN.
MAX.

30.40 (1.197)
NOTES : MAX.
1. COMFORMS TO EIA-418. 26.40 (1.039) 4
2. CONTROLLING DIMENSION: MILLIMETER. 24.40 (.961)
3. DIMENSION MEASURED @ HUB.
3
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

Data and specifications subject to change without notice.

This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 01/12
www.irf.com 11
IMPORTANT NOTICE
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”) .
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement
of intellectual property rights of any third party.
In addition, any information given in this document
is subject to customer’s compliance with its
obligations stated in this document and any
applicable legal requirements, norms and
standards concerning customer’s products and any
use of the product of Infineon Technologies in
customer’s applications.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments
to evaluate the suitability of the product for the
intended application and the completeness of the
product information given in this document with
respect to such application.
For further information on the product, technology,
delivery terms and conditions and prices please
contact your nearest Infineon Technologies office
(www.infineon.com).
WARNINGS
Due to technical requirements products may
contain dangerous substances. For information on
the types in question please contact your nearest
Infineon Technologies office.
Except as otherwise explicitly approved by Infineon
Technologies in a written document signed by
authorized representatives of Infineon
Technologies, Infineon Technologies’ products may
not be used in any applications where a failure of
the product or any consequences of the use thereof
can reasonably be expected to result in personal
injury.