MODULE 1: MOS

TRANSISTOR THEORY

Dr. G. Lakshmi Priya, AP (SG), SENSE,

VIT, Chennai
 MODULE 1: SYLLABUS

 I – V Characteristics

 C – V Characteristics

 Non – ideal effects of MOS Transistors

 Student Learning Outcomes (SLO): Hours Allotted:

Having a clear understanding of the subject related concepts and of contemporary issues 5 Hours

 Expected Course Outcome (ECO):

Clear understanding fundamental concepts of MOS transistors

 MOSFET - SYMBOLS

drain drain

gate body gate body

A circle is sometimes
source used on the gate
terminal
source
to show active low
or input or
drain drain

body body
gate gate

source source

n-channel MOSFET p-channel MOSFET

 MOSFET - TYPES

1. Depletion MOSFETs (D-MOSFETs) : can be operated in either the

depletion mode or the enhancement mode (Negative VGS).
2. Enhancement MOSFETs (E-MOSFETs) : can be operated only in the
enhancement mode (Positive VGS) .
ENHANCEMENT TYPE - N - MOSFET
 N - MOSFET – WORKING PRINCIPLE

(a) DC voltage source applied between S - D (b) With applied Gate Voltage
3D VIEW OF N - MOSFET
THREE MODES OF OPERATION OF N - MOSFET
THREE REGIONS OF OPERATION – CUT OFF
THREE REGIONS OF OPERATION - LINEAR
THREE REGIONS OF OPERATION - SATURATION
 BOOKS AND WEBLINKS
 TEXT BOOK

 Neil H.Weste, Harris, A. Banerjee, “CMOS VLSI Design, A circuits and System Perspective”, 2014,
Fourth Edition, Pearson Education, Noida, India

 REFERENCE BOOKS

 Jan M. Rabaey, Anantha Chadrakasan, BorivojeNikolic, “Digital Integrated Circuits: A Design

Perspective”, 2014, Third Edition, Prentice Hall India, New Jersey, US.

 Yogesh Chauhan, Darsen Duane Lu, Vanugopalan Sriramkumar, Sourabh Khandelwal, Juan Duarte,
NavidPayvadosi, Ai Niknejad, Chenming Hu, “FinFETModeling for IC Simulation and Design”, 2015,
Academic Press, Elsevier.

 WEBSITE LINKS

 https://nptel.ac.in/courses/108/107/108107129/
 https://www.youtube.com/watch?v=--fFzh5jxE8&t=959s
 https://www.youtube.com/watch?v=7XEUB_dTaK0
THANK YOU !!!