MOS Transistor – Problem Sheet

(1) Consider an NMOS process technology for which Lmin = 0. 4 mm, tox = 8 nm,
μn = 450 cm 2/Vs, Vt = 0. 7 V.

(a): Find Cox and k’n.

(b): For a MOSFET with W/L = 8 mm/0.8 mm, calculate the values of VOV, VGS,
VDSmin needed to operate the transistor in the saturation region with dc current I D =
100 μ. A.

(c): For the device in (b), find the values of VOV and VGS required to cause the device
to operate as a 1000 ohm resistor for very small VDS.

(2) Calculate the diffusion parasitic Cdb of the drain of a unit-sized contacted (4 x 5λ)
nMOS transistor in a 65 nm process with when the drain is at 0 V and again at V DD =
1.0 V. Assume the substrate is grounded. The diffusion region conforms to the
design rules with λ = 25 nm. The transistor characteristics are CJ = 1.2 fF/µm2, MJ =
0.33, CJSW = 0.1 fF/µm, CJSWG = 0.36 fF/µm, MJSW = MJSWG = 0.10, and Ψ0 = 0.7 V at
room temperature.