Professional Documents
Culture Documents
Semiconductors
and Metals
Quantum Theory of Molecules and Solids
VOLUME 3
JOHN C. SLATER
GRADUATE RESEARCH PROFESSOR, UNIVERSITY OF FLORIDA
INSTITUTE PROFESSOR, MASSACHUSETTS INSTITUTE OF TECHNOLOGY
has been expended, and in which most of the experimental papers have
at the same time a theoretical implication, so that they must be included
in any adequate bibliography. It is so long that I have adopted various
devices to enhance its usefulness. One of these is to separate it into two
parts, on a chronological basis, papers before 1946, and papers since 1946.
The latter bibliography is very much longer than the former, but most of
the fundamental papers are found in the earlier period. They stand out
better when they are not diluted with the enormously large literature of
the postwar period. Another device is to include numerous lists, through-
out the text, of authors and dates of papers dealing with specific topics,
which can serve as indexes to the main bibliography, where the detailed
references can be looked up. Even with the very great length of the
bibliography, it is still far from complete. I can only plead in extenu-
ation that it is as complete as I could make it, consistent with getting the
book finished, and that furthermore it fills up as large a fraction of the
volume as I think anyone would wish. As in previous volumes of the
series, I believe that the usefulness of the bibliography is greatly enhanced
by including the titles of references, as well as the journal and page.
As in the preceding volumes of this series, I wish to acknowledge my
indebtedness to my colleagues in the Solid-State and Molecular Theory
Group at M.I.T., as well as to my new coUeagues in the Quantum Theory
Project of the University of Florida, for help in connection with the work
reported here. Also I wish again to thank the National Science Founda-
tion for support both at M.I. T. and in Gainesville, and the Office of
Naval Research for support at M.I.T., support which has made the
research groups possible, and which has contributed greatly to the
progress of the field which I am describing in these volumes.
JOHN C. SLATER
CONTENTS
PREFACE vii
7-1. The Debye and Born.,-von Karman Theories of Crystal Vibrations 159
7-2. The Thermal Vibrations of a Crystal 163
7-3. The Debye-Waller Factor in X-ray Scattering 166
7-4. The Temperature-diffuse, or Brillouin, Scattering of X-rays 172
7-5. The Bragg Conditions for Brillouin Scattering 17 4
7-6. Scattering of Electrons and Neutrons by Thermal Oscillations 179
CONTENTS xiii
Bibliography 351
INDEX 543
Insulators
Semiconductors
and Metals
VOLUME 3
1
The Free-electron Theory of Electrical
Conductivity
vol. 2, McGraw-Hill Book Company, New York, 1965, entitled "Symmetry and
Energy Bands in Solids." Similarly, "Volume l" refers to the first volume of the
same series, published in 1963, entitled "Electronic Structure of Molecules."
I
2 INSULATORS, SEMICONDUCTORS, AND METALS [Chap. 1
bands still higher. Metals, on the contrary, have partly filled bands,
filled up to a Fermi energy, with empty levels immediately above. Semi-
conductors have gaps like insulators, but very much narrower, so that
in general an infrared photon of energy hv is able to raise an electron
from the lower filled band, the valence band, to the next higher empty
band, the conduction band.
The theory was able to go far beyond this point, however, and this
development occurred very rapidly. This was only because by 1926,
when wave mechanics was invented, solid-state theory was already a
very well-developed subject. Theories of many of the properties of
crystals had been worked out, substantially to the point which they have
now reached. The result was that the wave mechanics, far from having
to provide a complete explanation of solids, formed instead a sort of
finishing touch, allowing the existing theories to be combined into a
consistent whole which since then has developed into a subject of great
variety and rapid expansion. It is quite impossible to understand
modern solid-state theory without a thorough knowledge of these older
aspects of the theory which developed before 1926. Consequently in
this volume we shall put considerable stress on the main features of the
earlier solid-state theory which have carried over into our present
thinking.
This treatment should serve to convince the reader that the prevalent
idea that solid-state physics is a development of the last very few years
is quite wrong. It is true that the number of papers published in the
field since the war years 1939 to 1946 is enormously greater than the
number published before, and that many of the most beautiful experi-
mental methods have been worked out since the war. These facts are
vividly illustrated by the Bibliography at the end of this volume, which
is divided into two parts, the first listing papers through 1946, the second
the later papers. The second bibliography is much longer than the first.
But our theoretical understanding of the solid state was remarkably
complete by 1939; we have just stated that many branches of the field
had been studied very successfully by 1926. And even by 1900 great
progress had been made in the understanding of solids.
The nineteenth century was a period of study of the bulk properties
of matter, but also of a fairly complete development of the kinetic theory
of gases, of understanding of the general nature of molecules, and of the
beginning of our knowledge of electrons, ions, and the electronic prop-
erties of matter. A good deal of solid-state theory was worked out before
1900, as well as a great deal of experimental study of solids. For instance,
the study of the symmetry of crystals, the space groups, and so on, which
formed an important feature of Volume 2 of this work, was developed
before 1900. Such topics as the elasticity of crystals, the optical prop-
Sec. 1- 1] THE FREE-ELECTRON THEORY OF ELECTRICAL CONDUCTIVITY 3
raphy; "Lehrbuch der Optik," S. Hirzel Verlag KG, Stuttgart, 1900, translated by
C.R. Mann and R. A. Millikan as "The Theory of Optics," 1st ed., Longmans, Green
& Co., Inc., New York, 1902, 2d ed., 1929.
4 INSULATORS, SEMICONDUCTORS, AND METALS (Chap, 1
where the term -mg dx/dt is the resistance proportional to the velocity.
The solution of Eq. (1-1) consistent with the initial condition that the
velocity starts from zero at t = 0 is
dx eE 1
- = v = - - [1 - exp (-t/to)] to= - (1-2)
dt mg g
This indicates that after a time of the order of magnitude of to, the velocity
v of the electron will have settled down to a value -eE/mg, proportional
to the electric field, obtained from Eq. (1-1) by setting the acceleration
equal to zero. We shall see shortly that this time to is very small, so
that for most practical purposes we can assume that the steady state of
constant velocity is reached instantly.
Now if we have N electrons per unit volume, the current density J
will be given by -Nev. Hence we shall have
Ne 2 , Ne 2
J = - E = <TE where <T = - (1-3)
mg mg
1 H. A. Lorentz, Proc. Amsterdam Acad., 438:588, 684 (1904-1905). "The Theory
of Electrons," 1st ed., B. G. Teubncr Verlagsgesellschaft mbH, Stuttgart, Leipzig,
and Berlin, 1909, 3d ed., Stechert-Hafner, Inc., New York, 1923, gives an excellent
account of the work, some actually dating back to a good many years earlier.
Sec. 1-2] THE FREE-ELECTRON THEORY OF ELECTRICAL CONDUCTIVITY 5
From Eq. (1-4) we can estimate to, if we use the experimentally observed
value of u, assume that N is of the order of magnitude of one electron
per atom, and use for m the electronic mass. When we carry out this
calculation for a metal, we find an extremely small value of to, verifying
our earlier statement that the state of constant velocity is reached almost
immediately after application of the accelerating force.
The value of to can be described in another way, if we ask for the solu-
tion of Eq. (1-1) for the case where the applied field is zero, but where
at t = 0 the velocity has a value Vo different from zero. Then we find
showing that to is the time required for an initial drift velocity of the
electrons to fall to 1/ e of its value.
It is often convenient to write our expressions in a different form. We
define the mobility of a charged particle, under the action of an electric
field, as the velocity which it acquires, per unit electric field. The
terminal velocity, given by Eq. (1-2), has a magnitude of cE/111.,g, so that
the mobilityµ equals e/mg. In terms of the mobility, Eq. (1-3) can be
rewritten
u = Neµ (1-6)
the beginning of the mean free time, when the velocity is zero, to the
time of collision. This value of velocity leads at once to
Ne 2 ti
(T = m2 (1-7)
From this we see that t 1 is closely associated with lo, the time introduced
before. In other words, the time taken to reach a constant velocity is
essentially the same as the mean free time between collisions. Our simple
calculation of Eq. (1-7) is, of course, too crude to give numerically correct
results. To improve it, .we should take account of the three-dimensional
nature of the motion, and of the fact that free times will not all have the
same length, but will be statistically distributed. These refinements
were of the type which Drude and Lorentz, working in the spirit of the
kinetic theory of gases, were in position to make, and they have the
effect of changing the numerical coefficient in Eq. (1-7), but not of chang-
ing the fundamental idea of the calculation.
Ohm's law, then, followed from a very simple application of the electron
theory. Other results as well followed. It is known, as discovered
experimentally by Wiedemann and Franz, that for metals the thermal
conductivity is proportional to the electrical conductivity, good electrical
conductors being good thermal conductors. This could naturally be
explained if the heat were conducted in metals by the motion of the free
electrons, just as heat is conducted in a gas by the motion of the molecules.
A good electrical conductor, as we see from Eq. (1-4) or (1-7), is one
with many free electrons per unit volume, and with a long mean free
time between collisions. Thermal conduction arises, if we describe it
in very simplified terms, by the motion of particles from the hot part of a
substance to the cold part. They carry heat to the cold part, raising
the temperature there. Obviously the more electrons there are, for
electronic conductivity, or the further they travel before they are stopped,
the more effective they will be in thermal conductivity. Drude and
Lorentz computed the thermal conductivity, using arguments of this
sort, familiar from the kinetic theory of gas, and found not only the propor-
tionality between electrical and thermal conductivity which was known
to hold experimentally, but also a numerical value for the ratio, the
so-called Wiedemann-Franz ratio, in terms of universal constants, which
agreed well with the measured values. Clearly the theory was along
the right lines.
1-3. Shortcomings of the Drude-Lorentz Theory. We have now
sketched the main features of the Drude-Lorentz theory of conductivity
of metals. They worked out theories as well for the optical behavior
of solids, and for the various thermoelectric properties, as well as the
Hall effect, and related effects. These theories seemed in general very
---------- --- - - -
F(E) - l (1-8)
- exp (E - EF)/kT +l
where EF, the Fermi energy, is to be determined. This Fermi func-
tion, F(E), is shown in Fig. 1-1. When E is much less than EF, F(E)
approaches 1, while when E is much greater than EF, F(E) approaches
zero. As we see from the figure, the change from one situation to the
other occurs more rapidly, the lower the temperature. At the absolute
zero the change is infinitely rapid, all energies less than E F having two
electrons per energy level, one for each spin, while all energy levels above
EF are empty. Thus we see that EF corresponds to the Fermi level as
previously defined; at the absolute zero, it is at the top of the occupied
energy levels.
1 E. Fermi, Z. Physik, 36 :902 (1926). P. A. M. Dirac, Proc. Roy. Soc. (London),
A112 :661 (1926). Further references in J. C. Slater, "Quantum Theory of Atomic
Structure," vol. 2, .McGraw-Hill Book Company, New York, 1960.
2 See for instance J. C. Slater, "Introduction to Chemical Physics," McGraw-Hill
Book Company, New York, 1939, particularly chaps. V, VI, and XXIX, for an
elementary discussion.
Sec. 1-4) THE FREE-ELECTRON THEORY OF ELECTRICAL CONDUCTIVITY 9
-6 -5 -4 -3 -2 -I O I 2 3 4 5 6
f-EF
FIG. 1-1. Fermi function F(E) of Eq. (I-8). (a) Absolute zero of temperature;
(b, c) higher temperatures.
use periodic boundary conditions. Hence the wave vectors k,,, ky, k.
describing the wave functions must satisfy the conditions
z
k, = 2,r n. (1-9)
(1-11)
10 INSULATORS, SEMICONDUCTORS, AND METALS [Chap. 1
In Eq. (1-11) we have found the number of states of one spin whose
energy is less than E. Each of these states can accommodate two elec-
trons, one of each spin. Hence if N is the number of electrons in the
gas, we shall have the Fermi energy E F determined by the condition that
(1-12}
~; = 21r(2m}*E¼; (1-13)
The heat capacity, then, which is the derivative of this quantity with
respect to temperature, will be proportional to k 2 T dN /dE. More
elaborate treatment1 shows that the correct value is
11"2 N
Heat capacity = 2 k 2 T E F (1-15)
which is of the required form of Eq. (1-14), since the density of states
dN / dE at the Fermi level for a free electron gas is proportional to N / E F-
The result of the Fermi-Dirac statistics, then, is an electronic specific
heat which at low temperatures is proportional to the absolute tempera-
ture, instead of being a constant as in the classical statistics. When we
compare Eq. (1-15) with the heat capacity of a classical gas, %Nk, we
see that the ratio of the Fermi-Dirac to the classical heat capacities at
low temperature is
C(Fermi-Dirac) '71" 2 kT
(1-16)
C(Maxwell-Boltzmann) = 3 EF
low temperatures will be found under the following authors: J. C. Bowman (1958),
W. S. Corak (1955), G. Duyckaerts (1939), S. A. Friedberg (1952), H. Frohlich (1937),
K. P. Gupta (1962), G. L. Guthrie (1959), R W. Hill (1953), M. Horowitz (1953), H.
Jones (1957, 1964), F. Kaschluhn (1956), W. H. Keesom (1939-1940), K. Komatsu
(1951-1955), W. H. Lien (1964), W. Marshall (1960), G. L. Pickard (1948), J. A.
Rayne (1956-1958), L. M. Roberts (1957), J. C. Walling (1959), J. E. Zimmerman
(1961).
2 A. Sommerfeld, Z. Physik, 47 :1, 43 (1928). C. Eckart, Z. Physik, 47 :38 (1928).
W. V. Houston, Z. Physik, 47 :33 (1928); 48 :449 (1928); further papers in Bibliography.
3 W. V. Houst.on, loc. cit ..: Phys. Rei'., 34 :279 (1929). F. Bloch, Z. Physik, 52 :555
(1928). J. Frenkel and N. Mirulobow, Z. Physik, 49:885 (1928).
4 P. Debye, Ann. Physik, 43 :49 (1914). L. Brillouin, Compt. Rend., 158: 1331
(1914); Ann. Phys. (Paris), 17 :88 (1922).
Sec. 1-5] THE FREE-ELECTRON THEORY OF ELECTRICAL CONDUCTIVITY 13
of the fact that the electron goes through atom after atom, the periodicity
of the problem is such that we have our solutions of the problem in the
form of regular electron waves, with no damping at all. This possibility,
a result of wave mechanics, by which electrons can go through many
atomic distances without finding obstacles, removes the puzzle found in
the Drude-Lorentz theory, in which it was hard to see how an electron
could go even a single atomic distance without being stopped by a colli-
sion, and yet such a short mean free path would lead to much too small
a conductivity.
To get damping of an electron wave according to wave mechanics,
we must look for something besides propagation in a periodic potential;
and we shall soon see that almost any disturbance of the periodic lattice
will have the effect of damping the wave. The phenomenon which we
must look for is the scattering of the electron waves by lattice irregulari-
ties. Scattering is familiar from optics. We know that as a plane wave
of light enters a scattering medium, like a gas or liquid, wavelets will be
scattered by each scattering center, such as a molecule or a dust particle,
and these scattered wavelets will rob intensity from the incident wave.
The scattered waves involve propagation of the wave in all directions
from the scattering center. As light becomes more and more scattered,
with multiple scattering, by which light already scattered once is scat-
tered again, it will be traveling uniformly in all directions. We see some-
thing of this effect in the atmosphere: the blue color of the sky is a result
of scattered light (blue because the short waves scatter more than the
long ones), and it reaches us from all directions because it has been scat-
tered at various points in the atmosphere. On a clear day we still see
the sun, though not as strongly as if there had been no scattering; the
fraction of sunlight scattered on its way to us on a clear day is not very
large. On a hazy day, however, there is more scattering, we do not see
the sun at all, but we have a large amount of scattered light coming from
all directions. All this can occur without any true absorption: by
absorption we mean the real loss of the light, on account of a change of
wavelength or character, ending up as thermal motion, while with scat-
tering the light is still there, but traveling in a different direction.
In a similar way the electron wave can be scattered, with the result
that it is converted from a plane wave, having a definite momentum,
to waves traveling in all directions, and thus not corresponding to a net
momentum at all. This scattering obviously results in a loss of the net
current flowing in the material; the random motion in the scattered wave
can result in random currents, but not in any average current. Thus
it is the type of phenomenon which can be described in terms of a mean
free time for scattering, or in terms of a resisting force or a mobility:
an electron, traversing such a scattering medium, will gradually lose its
14 INSULATORS, SEMICONDUCTORS, AND METALS [Chap. 1
will be just about the same as if the exclusion principle did not act; for
it will have only a small chance of finding the level occupied into which
it would be scattered.
We then build up the following picture of the process of scattering.
Under the action of the impressed electric field, the points representing
the electrons move uniformly through momentum space, in the direction
of the external force. This motion is not interfered with by the scatter-
ing, until the regular motion, like a procession, has carried the points
up to the energy of the Fermi level, and perhaps slightly above. Then
the probability of scattering will begin to operate, and after a further
time of the order of t 1 the electron will be scattered, its momentum point
after the scattering being found somewhere near the boundary of the
occupied region in the momentum space, roughly on the Fermi surface.
This will lead to an equilibrium situation: the distribution will reach a
steady state when it is displaced by the amount which it reaches in
approximately the time t1, But this is essentially equivalent to the
situation which we met in classical statistics, as described previously.
The velocity of each electron will have increased by the same amount
in the time t 1, and the problem of finding the conductivity will be exactly
as in Eq. (1-7). Thus we justify our statement that, though the situa-
tion is really very different from what it would be without the Fermi
statistics or the Pauli exclusion principle, still the net result, as far as
conductivity is concerned, is the same.
In the discussion of this section, we have been making several drastic
and unjustified assumptions. First, we have been assuming that we
were dealing in a real metal with free electrons, whereas we know from
the discussion of Volume 2 that the real wave functions and energies are
very different from those for free electrons. Obviously we must con-
sider the energy-band structure in our discussion of conductivity, and
we expect in this way to find the verification of the statements which we
have made regarding the distinction between metals, semiconductors,
and insulators. Second, we have been treating the acceleration of the
electrons by classical mechanics. Obviously we cannot do this; we must
ask how they would be accelerated by an external field in wave mechanics.
And we cannot handle the momentum as a definitely determined quantity,
as we have just been doing, on account of the uncertainty principle.
Instead, we must set up wave packets, of such a size as. to take account
of the uncertainties of coordinates and momenta, and must consider the
acceleration of these wave packets in an external field. These important
questions regarding the wave-mechanical interpretation of conductivity
will be the first topic to be taken up in the next chapter, after which we
shall be in a position to understand the conductivity of different types
of solids.
2
Electrical Conductivity in Metals and
Semiconductors
Now we shall consider the first of the two theorems which we have
mentioned earlier. This is one giving the average velocity of a wave
packet in a periodic potential. We have just mentioned that this average
velocity should not be related in the normal way to the crystal momen-
tum p, but rather to the average momentum averaged over the wave
function. We should expect that the average velocity could alterna-
tively be found as the group velocity of the waves; and this proves to be
the case. We recall [see J. C. Slater, "Quantum Theory of Atomic
Structure," vol. 1, eq. (2-2) and appendix 3,] McGraw-Hill Book Com-
pany, New York, 1960, that the standard formula for group velocity is
aH aH
Vgy = dpy Vg, = iJp, (2-2)
Here p,,, Pv, p, are momenta related to the wavelength through the
de Broglie relation, and hence in the present case they should be the
crystal-momentum components, not components of the true average
momentum of the wave packet. Consequently, if the energy in the nth
energy band is given in terms of the wave vector by the expression En(k),
we should expect that
I aEn I aEn
Vgx = h ak,, Vgy = h aicy (2-3)
It is this relation which proves to be satisfied. In Appendix 1 we find
the average, over a Bloch wave or a wave packet, of the velocity operator,
which of course equals the average of the momentum operator, divided
by the mass of the electron, and we show that it is equal to the value
of Eq. (2-3); the proof of Appendix 1 is a straightforward one, not depend-
ing at all on the concept of group velocity.
In the presence only of the periodic potential, a wave packet would
continue indefinitely with constant values of crystal momentum, energy,
and velocity, like a freely moving particle in classical mechanics. We
wish, however, to consider the effect on the wave packet of an additional
perturbing field, electric or magnetic, of the type which could be intro-
duced from outside in an ordinary experiment on conductivity in the
presence of a magnetic field. Let there be a perturbative potential
energy V 1, depending slowly on position, and a time-independent vector
potential A, giving the magnetic field by the equation B = curl A. Let
the combined electric and magnetic force acting on an electron, as a
result of these fields, be F, given by
F = -e[E + (v X B)] (2-4)
packet, given by Eq. (2-3), and Bis the magnetic field. Then the second
theorem which we prove in Appendix 1 is that
or the time rate of change of the crystal momentum kli is given by the
perturbative force. Though this looks like Newton's second law, of
course it is not equivalent to it, for it deals with the crystal momentum
rather than the real momentum, and the force acting on the wave packet
does not include the force arising from the periodic potential, which
represents the major part of the force.
Though Eq. (2-5) is thus not identical with Newton's second law,
nevertheless we can make it plain that these equations must hold, at
least in the absence of a magnetic field, by a simple argument based on
the conservation of energy. In the absence of a magnetic field, the total
energy of the wave packet is the sum of En, the energy in the energy band
in the absence of a perturbation, and Vi, the perturbative potential
energy at the position of the wave packet. We know that we must have
conservation of energy, so that the wave packet must move so that
En + V1 stays constant. But this is a result of Eqs. (2-3) and (2-5).
We can write these equations in the form
dx _ I aEn
(2-6)
dt - h akx
with similar equations for the y and z components. Then we have
d(En + V1) = a(En + V1) dx + a(En + V1) ~J!.. + a(En + V1) dz
& ~ & ~ & ~ &
+ a(En + V1) dkx + a(En + V1) dk + a(En + V1) dk,
11 = O (2_7 )
akx dt ak11 dt ak, dt
when we remember that En is independent of x, y, and z, and V I is inde-
pendent of the components of k. This proof of conservation would not
have held if we had not had Eq. (2-5) for the acceleration of the wave
packet. Our argument continues to hold in the presence of a magnetic
field; for the magnetic force, being proportional to v X B, is at right
angles to the velocity of the wave packet, so that it does no work, and
does not affect the energy.
2-2. The Acceleration of a Wave Packet in an Electric Field. We
shall now start to examine the consequences of the two theorems of
Eqs. (2-3) and (2-.5), governing the motion of wave packets in a periodic
potential plus a perturbative field. We start with the case of a constant
external electric field, such as we should meet in the simple case of
electrical conduction. We can illustrate most properties of the result
Sec. 2-2] ELECTRICAL CONDUCTIVITY IN METALS AND SEMICONDUCTORS 25
with a one-dimensional case, which we therefore use for the first part
of our discussion. Under the action of a constant force along the x
direction, we know that the crystal momentum will increase uniformly
with time, according to Eq. (2-5). Let us then ask how the velocity
will change with time.
It is easier to answer this equation if we show the energy En in the nth
band as a function of k,., the wave vector, and at the same time show the
velocity v,. = (1/h)(aEnfak,.), proportional to the derivative of the curve
of En versus k,.. We show these two curves, for a simple case, in Fig. 2-1.
We now start at time t = 0 with the wave vector k,., or the crystal
momentum p,. = lik,., equal to zero, which as we see from the figure
implies that the velocity is also equal to zero. In the constant external
\JW\.L
Fm. 2-1. Energy E,. in nth band, and vz, velocity along the x direction, as functions
of kz, in a simple one-dimensional model of a crystal.
field, k,. will increase uniformly with the time. As it approaches 1r/a,
however, or the edge of the Brillouin zone, and we come to the maximum
of the energy curve, the velocity goes to a maximum, decreases, and is
zero just at 1r / a. It then goes negative, to a large negative value, and
gradually increases to zero, which it reaches when k,. equals 21r/a, just
as it was when k,. was zero. How, we ask, can we explain physically this
peculiar situation, by which a positive force, and a positive time rate of
change of crystal momentum, can sometimes be associated with a nega-
tive acceleration?
The explanation is tied up with the Bragg reflection, about which we
spoke in Volume 2, Secs. 6-6 and 7-6. As the wave vector of the electron
approaches 1r/a, its wavelength approaches 2a, the value for which Bragg
reflection occurs. There is then a very great chance of reflection, or
reversal of the velocity. This is the phenomenon which is occurring
in the neighborhood 1of this value of the wave vector. After the reflec-
26 INSULATORS, SEMICONDUCTORS, AND METALS [Chap. 2
tion, the electron will be traveling in the opposite direction, and further
application of the force will gradually slow it down, reverse its velocity,
speed it up again, until again it reaches the correct momentum or velocity
for Bragg reflection, and so on. It is in this way that the periodic
dependence of velocity on k,. is to be understood. ·
Mathematically, if the electron is almost free, its wave function is
made of the wave whose wave vector is k.,, with only a slight mixture
of those with wave vectors k,. + K;,. for any value of K;,. different from
zero, until we almost reach the situation for Bragg reflection. Here the
vectors K;,. equal 21rj/a, where j is an integer. Ask,. increases from zero
and approaches the value 1r/a, the other wave with wave vector k., - 21r/a
approaches a wave vector -1r/a, degenerate with the original wave.
Just at the edge of the Brillouin zone these two waves have equal ampli-
tudes, and since they correspond to equal but opposite momenta, the
average momentum is zero, and hence the velocity of the wave packet
is also zero. As k., increases beyond 1r/a, the wave with wave vector
k,. - 21r/a rapidly takes over and acquires almost the whole amplitude
in the expansion of the wave function, and by the time k,. equals 21r/a,
this other wave has a wave vector of zero, and behaves just like the
wave corresponding to k., = 0, at the origin of k space. The whole cycle
then repeats periodically as k,. continues to increase without limit. The.
explanation, then, of the way in which a force along the positive x axis
can produce acceleration in the negative x direction is that it is not the
only force acting: it merely brings the electron, or the wave packet, up
to the wave vector or wavelength· at which Bragg reflection can become
operative, a much stronger effect, which reverses the direction of the
velocity.
It is interesting to ask not only how the wave packet moves under the
action of a constant field, but also how it moves under the action of a
force such that it never gets far from the minimum of energy. Near
the minimum the energy is a quadratic function of k.,; we may write it
as a series expansion starting with the terms
p2 k!h2
E = Eo +. 2m* = Eo + 2m*
where E 0 is the energy at the minimum, and m* is a quantity of the
dimensions of a mass, but not, in general, equal to the electronic mass
(unless it should happen to turn out that the curvature of the energy
surface at its minimum was the same that we should get for a free elec-
tron). Then Eq. (2-3) tells us that v,. = k,,h/m*, and from Eq. (2-5)
we have
(2-8)
Sec. 2-2) ELECTRICAL CONDUCTIVITY IN METALS AND SEMICONDUCTORS 27
** d 2 x _ F _ aV 1 (2-10)
m dt 2 - - "' - ax
Near the top of the band, in other words, we have another effective mass;
but more surprisingly, the force accelerates the particle in the opposite
direction to what we should expect, as if the electron had the opposite
charge to its real charge, so that it acted like a positive electron. This
is really, of course, nothing but an expression of the same thing which
we saw when considering a steady force: it is in this neighborhood that
we are meeting Bragg reflection, and the particle does, in fact, accelerate
in the opposite direction to what we should expect from the action of
the external force alone.
In both cases we have taken up, we note that the effective mass m*
or m** can be quite different from the real electronic mass. Thus if
the energy band is very narrow, so that there is small curvature at the
bottom of the band, m * will be large, sometimes very much larger than
the electronic mass. On the other hand, at the top of a band like that
shown in Fig. 2-1, where the curvature is great, m * * will be very small.
By comparison with cases taken up in Volume 2, Chap. 10, we see that
we can often have cases in which the roles of maximum and minimum
are reversed, so that the maximum of the band comes at k = 0. There
are other cases where the maximum or minimum of the band comes
inside the Brillouin zone, rather than at k = 0 or at the boundary of
the zone. There are also cases, particularly for bands of higher energy,
where both top and bottom of the bands have very large curvature,
corresponding to very small effective masses.
Now let us consider the current carried by partly filled and by filled
bands, and the way in which an ext.ernal field affects this current. In
the first place, we observe that if the energy levels are filled up to a cer-
tain energy, the net current is zero. We remember that with a finite
crystal there will be energy levels at equally spaced points along the kx
28 INSULATORS, SEMICONDUCTORS, AND METALS [Chap. 2
axis. With a partly filled band these levels will be full on both sides
of k., = 0, out to equally great positive and negative values, and clearly
there will be as many electrons with negative as with positive velocities.
But now let us assume that a constant external field acts on the distribu-
tion. Then all wave packets move uniformly to the right along the k.,
axis, so that after a lapse of time, there will be a net velocity, and hence
a net current proportional to the force and the time which has elapsed.
Then we shall have a situation similar to that described in Sec. 1-6. If
we are in a region where the energy of the electron is a quadratic function
of the momentum, with an effective mass m*, so that Eq. (2-8) holds,
the velocity of each electron will have increased by the same amount
(-eE/m*)t 1 in the time t1, and the problem of finding the conductivity
will be as in the free-electron case, except that we are to use the effective
mass m * instead of the real mass. The situation is not changed in any
important detail if the energy band is filled to a position such that we
can no longer use Eq. (2-8) to indicate the acceleration of the wave packet.
Our qualitative discussion, in terms of the displacement of the occupied
levels in the momentum space, still holds.
The situation is quite different, however, provided we have a filled
band. In this case we have states uniformly filled for an interval 21r/a
along the k., 11Xis. In such a case, by the periodicity of the function,
the total current of all the electrons is always zero. We can see this
analytically by a simple calculation. The average current, determined
by the average velocity, must be proportional to the integral of the
velocity with respect to k,,, from one value of k., to a value greater by
21r/a, because such integration with respect to k., is equivalent to summing
over all electrons or wave packets. But by Eq. (2-3) this velocity is
proportional to the derivative of E with respect to k.,. Thus the integral
of this quantity with respect to k., is the difference of energies at the two
ends of the interval of integration, and if this interval is 21r/a, the differ-
ence is zero on account of periodicity. Hence we have the justification
of the statement which we have made earlier: a substance in which all
electrons are in filled energy bands, none in partly filled bands, is neces-
sarily an insulator, whereas if we have partly filled bands, a current
can be carried.
An interesting situation arises in case we have a band almost filled,
with just a few empty levels near the top of the band, and then apply
an ext.ernal field. This situation is important on account of its occurrence
in some semiconductors, as well as in some metals. If all levels but one
are filled, and a field is applied, it is clear that the kx representing the
empty level or hole will move along the k,, axis just as the kx of a wave
packet would move. Thus, from our result of Eq. (2-10), the hole will
be accelerated as if it were a particle of positive charge. Let us next ask
Sec. 2-2] ELECTRICAL CONDUCTIVITY IN METALS AND SEMICONDUCTORS 29
what the resulting contribution to the current will be. The current aris-
ing from the effect of the electric field is really carried by all the electrons
filling the occupied energy levels. We have already seen that if all levels
were filled, the current would be zero. Thus the current carried by all
levels but the hole must be the negative of the current that would be
carried by an electron occupying the empty level. That is, the current
resulting from the acceleration of the hole is the current that would
result from a positive electron in that level. Both from the standpoint
of acceleration and of current, then, the hole acts as if it were a positive
electron with an effective mass m **. This interpretation of a hole near
the top of an energy band as acting like a positive electron is one which
is of great usefulness in the discussion of conductivity.
Parenthetically, it is interesting to note the close resemblance of this
mechanism to the theory of the positron. In the relativistic theory of
the electron we treat the energy of the electron as being the sum of its
ordinary kinetic energy and its rest energy moc 2, where mo is its rest mass,
c the velocity of light. Thus the allowed energy levels of an electron
start with the large positive value m 0c 2 and extend to all higher energies.
However, the relativistic equations of motion permit also a set of energy
levels of negative energy value, starting at -m 0c2 and extending indefi-
nitely downward from there to negative energies. This situation is like
that of energy bands, with two allowed bands, the one for negative
energies and the other for positive energies, with an energy gap of
allowed energies between -m 0c2 and m 0c2 •
Under ordinary circumstances, the lower band is assumed to be
entirely filled and hence to contribute nothing to the flow of current; all
ordinary electrons are those found in the upper band. However, under
some circumstances, holes can appear in the lower band, and these holes
will act like positive electrons according to the same arguments which
we have just used in the theory of semiconductors. These are the
positrons, or positive electrons. And the creation of a positron-electron
pair, by absorption of radiation, consists simply in raising one of the
electrons from the lower, filled band to the upper, almost empty band,
resulting in an electron of the ordinary sort in the upper band, leaving a
hole acting like a positron in the lower band. The minimum quantum
of energy permitting such pair formation is obviously given by h11 = 2moc2,
the width of the gap; this is close to a million electron volts.
In an entirely analogous w'ay, if we have an insulator with all its lower
bands filled, its upper bands empty, and absorb light whose quantum h11
is given by the gap width or more, it can raise an electron from the top
of the lower band to the bottom of the upper one, creating essentially an
electron and a positive electron, each of which then can carry current
under the action of an external field. This is a simple model of the
30 · INSULATORS, SEMICONDUCTORS, AND METALS [Chap. 2
where in general m.,, my, mz will be different. If we had not chosen the
principal axes as coordinate axes, we should also have found cross terms, '
as for instance in p,,p11 , and should have found that the coefficients of this
quadratic form, representing essentially the reciprocal of the effective
mass, would have formed a tensor. This tensor behavior of the effective
mass, by which an electron or hole can be accelerated to quite different
amounts, depending on the direction of the force, is of importance in some
cases of crystals with unsymmetrical structure, or in case the energy
minimum or maximum does not lie at the center of the Brillouin zone.
We shall find examples later of cases with different effective masses in
different directions. If we are expanding E near an energy maximum,
we can use Eq. (2-11) with negative values form,,, my, m., as in Eq. (2-9).
Near a saddle point, some of these quantities m will be positive, some
negative.
2-3. Conductivity of Metals and Semimetals. We have now seen
how wave packets accelerate in the presence of an external electric field,
and we can combine this information with what we have learned in the
preceding chapter about electron scattering to begin to understand the
conduction process in actual metals. In Fig. 2-2 we sketch schematically
the appearance which the Fermi surface, or surface of constant energy
equal to the Fermi energy, might have in several simplified cases of two-
dimensional crystals with simple square lattices. The case a is that of a
monovalent metal in which the free-electron approximation is satisfac-
Sec. 2-3) ELECTRICAL CONDUCTIVITY IN METALS AND SEMICONDUCTORS 31
0 0
0
9 0
2
(a) (h)
( C)
FIG. 2-2. Appearance of Fermi surfaces, both undisplaced, and displaced by action
of force along x direction during time t 1 , for three idealized cases of two-dimensional
square lattices. Case (a), free-electron metal. The circles marked 1 are the Fermi
surfaces, with one occupied energy band. Outside the circles, where marked zero,
there are no occupied energy bands. The black region between the undisplaced and
displaced surfaces is filled with occupied states on account of the displacement pro-
duced by the field, while the shaded region on the other side is emptied of occupied
states for the same reason. The Fermi surface occupies half the square Brillouin zone.
Case (b), similar model of a divalent metal or a semimetal. Region marked 1 has one
occupied band, that marked 2 has two occupied bands, and that marked O has none.
Case (c), case similar to copper, monovalent metal with very non-free-eler.tron type of
energy bands. Areas marked 1 have one occupied band; those marked O have none.
In each case the squares indicate the Brillouin zones. k = 0 corresponds to the center
of the square.
32 INSULATORS, SEMICONDUCTORS, AND METALS [Chap. 2
tory. In this case the Fermi surface will be a sphere, or in two dimen-
sions a circle. Since there will be one free electron per atom, or per unit
cell if there is one atom per unit cell, the volume inside the spherical
Fermi surface must be half the volume of the square Brillouin zone,
which would accommodate two electrons per cell, one of each spin. In
the presence of an applied electric field along the x axis, the spheres
would start to move to the right, as we have discussed in Sec. 1-6 and
Fig. 1-3, and after a time t 1 those electrons which have moved to higher
energies than the Fermi energy will have a chance of being scattered.
Let us, however, consider other cases in which the electrons must be
discussed by energy-band theory, and are far from free.
The case of Fig. 2-2b shows the sort of situation met in a divalent
metal, or in a semimetal. This figure is drawn as in Volume 2, Fig. 7-6,
in which different surfaces (or curves) separate the regions in which there
are different numbers of occupied energy bands below the Fermi energy.
Here the number 1 indicates that throughout most of the Brillouin zone
we have one occupied band below the Fermi energy, holding two electrons
per atom. There are some regions marked 2, however, in which there
are two occupied bands below the Fermi energy, and others marked 0,
in which there are no occupied bands. Since a divalent metal with one
atom per unit cell has two electrons per atom, it is necessary that the
area of the region marked 2 should equal that marked 0, so that the·
excess of electrons present in the one region should balance the deficiency
in the other.
We could consider that the electron distribution was composed of three
parts: first, a distribution of electrons, two per state, filling the whole
_Brillouin zone; second, an excess distribution of two more per state,
filling the regions marked 2; third, a distribution of holes, two per state,
in the regions marked 0. The true situation in a divalent metal of course
is much more complicated than this, since the structure is different, many
divalent elements have two atoms per unit cell, and the Fermi surfaces
are not spheres, but this simple example illustrates the principles. A
semimetal is similar to the case shown, but is one in which the areas
marked 0 and 2 would be extremely minute compared with the area of
the Brillouin zone. In the distribution just described, the distribution
of two electrons per state, filling the whole zone, will carry no current.
The excess electrons in the regions marked 2 will carry current, and the
holes in the regions marked O will also carry current. The current carried
by either the excess electrons or the holes will be given by a formula like
that of Eq. (1-3), only with the effective mass m* or m** in place of the
free-electron mass m. Since the current, and conductivity, depend on e2,
the currents and conductivities arising from the electrons and holes will
add.
Sec. 2-3] ELECTRICAL CONDUCTIVITY IN METALS AND SEMICONDUCTORS 33
sions: it is only the longitudinal sound waves, rather than transverse ones,
which lead to a sinusoidal perturbed potential, in a first approximation.
A more realistic discussion is that first applied to semiconductors by
Bardeen and Shockley,1 in which they introduced what is called a defor-
mation potential. In a longitudinal sound wave, different parts of the
crystal are compressed or expanded. Bardeen and Shockley considered
a homogeneously compressed or expanded crystal, in which of course the
potential energy would be modified as compared with the undistorted
crystal. To a first approximation, this modification could be described
as the addition of a constant to the average potential, and in a sinusoidal
sound wave, this would lead to a sinusoidal potential V 1, called the defor-
mation potential. In the earlier days it was quite hard to estimate this
deformation potential accurately, but in recent work carried out on lead
telluride by the augmented-plane-wave (APW) method 2 it has proved
possible to derive a deformation potential quite accurately from first
principles.
Next, having set up the sinusoidal perturbing potential which arises
from the sound wave, we must consider the scattering of an electron wave
by it. This is a straightforward calculation, very similar to the cases
of x-ray scattering which we shall take up later in Sec. 6-5. As a matter
of fact, by using the methods of Appendix 1, we can convert this problem
into that of the solution of Schrodinger's equation for a particle in a
sinusoidal potential, which we discussed in detail in Volume 2, Sec. 6-6.
It leads to a quantitative theory of the electron analogue of Brillouin
~cattering, which we have described qualitatively in the preceding
c\apter. It gives the probability of scattering of an electron by a lattice
wave of known amplitude.
Then one must apply kinetic theory to find the modified distribution
of electronic velocities or momenta, under the simultaneous action of the
external accelerating field, and the scattering. We must remember that
there is really no fixed time t 1 before a collision, but rather a probability
of collision. The probability of collision in a given case depends, on
account of the Fermi statistics, on the availability of a state into which
the electron can be scattered. The probability of scattering cannot be
assumed to be the same for all electrons, independent of their velocity
or momentum. On account of all these complications, the complete
theory of conductivity is very involved, and yet it does not depend on
principles beyond those which we have sketched. The equation of sta-
tistical mechanics defining the perturbed distribution of electrons in
momentum space, the so-called Boltzmann equation, ii:; set up and dis-
cussed in any text on kinetic theory. Its solution, however, is compli-
1 J. Bardeen and W. Shockley, Phys. Rev., 80 :72 (1950).
2 L. G. Ferreira, Phys. Rev., 137:Al601 (1965).
36 INSULATORS, SEMICONDUCTORS, AND METALS [Chap. 2
where q is the charge, E the electric field, and v x B the vector product
of velocity and magnetic field. We have seen in Sec. 2-1 that in studying
the motion of a wave packet, it is this force which gives the time rate
of change of the crystal momentum.
In the Hall effect, since the velocity v of the electron is along the con-
ductor, B transverse to it, the vector v X B is also transverse. In other
words, if the electron traveled along the conductor under the action of
the magnetic field, there would be a transverse force, tending to push
it to one side of the conductor. This, of course, could not go on for long,
for the electron would strike the surface of the conductor, stop there, and
remain as a surface charge. This surface charge would start establishing
a transverse electric field inside the conductor, and this process would
go on until the transverse electric field was built up to a large enough
value so that the net transverse force, given by Eq. (2-12), was zero, and
the further electrons would travel straight down the conductor without
transverse acceleration. For this to be the case, it is clear from Eq.
(2-12) that the magnitudes of the transverse E and the product of v and B
must be equal, or E = vB, where now we are dealing only with the mag-
nitudes of the quantities. But we recall that the current density J is
given by N qv, where N is the number of carriers per unit volume, q the
charge. Hence we have
1
E = JB = RJB where R = Nq (2-13)
Nq
Here R is the Hall constant; we have demonstrated that the Hall effect
should occur as it is found experimentally.
If we are dealing with an electron, q should be set equal to -e. The
sign convention is so chosen that if the current is carried by electrons
of negative sign, the Hall constant is negative, whereas positive carriers
would result in a positive Hall coefficient. Our simple derivation result-
ing in Eq. (2-13) proves to give the correct result for the case of electrons
with a Fermi distribution, as we meet them in a monovalent metal. For
the classical Maxwellian distribution, more careful study shows that
Eq. (2-13) must Le multiplied by a simple numerical eoefficient.
In the early days of measurement of the Hall effect, before 1900, Hall
found that many metals showed negative Hall constants, as we should
expect from electronic conductivity; but some metals showed positive
38 INSULATORS, SEMICONDUCTORS, AND METALS [Chap. 2
(2-14)
When we examine the Hall constants for the various metals, we find
interesting results. For the alkali metals the constants come out rather
close to -I/Ne, where N is the number of atoms per unit volume, indi-
cating, therefore, that we are justified in treating these metals as having
one free electron per atom, satisfying the conditions for Eq. (2-8). For
the metals Cu, Ag, and Au this is approximately true, though not as
accurately as for the alkalies. For some other metals we get much poorer
agreement with the expected number of electrons; we presumably are
to explain this by assuming that the conditions of Eqs. (2-8) and (2-10)
are not fulfilled.
Most interesting, perhaps, are the semimetals As, Sb, and Bi. These
materials have extraordinarily large Hall constants, and other magnetic
effects associated with them are unusually large. This is usually inter-
preted in terms of the assumption that for these materials the electrons
almost exactly fill one band, with very few electrons extending into
another band, as we mentioned in Volume 2, Sec. 10-6. Thus we have
the conditions for Eq. (2-14), with very small values of nh and n.. The
denominator will be very small compared with the numerator, unless
we happen to have cancellation of the positive and negative terms in
the numerator, which we do not seem to have in these cases; thus the
Hall constant will be very large, as observed. Even in spite of this
situation of very small effective numbers of free electrons, the conduc-
tivity is not as small as we might expect from Eq. (1-4); this must mean
that the effective mass m* or m** is quite small, or the mobilities corre-
spondingly large. The Hall constant for Bi is negative, but that for
Sb is positive, indicating that the numerator of Eq. (2-14) has opposite
signs in the two cases, the negative electrons being more important cur-
rent carriers for bismuth, but the positive holes for antimony.
From these remarks, it is clear that the Hall effect provides a piece
of information about conductors which we cannot get in any other way:
indication in a rather direct way about the number of current carriers
and the sign of their charge, whereas conductivity gives information
complicated by the effective mass, and complicated by the fact that the
square of the charge, rather than its first power, enters, so that positive
and negative carriers act alike. In the study of semiconductors, which
we shall next consider, the Hall effect is even more important than with
metals. Here we have very few carriers of current, and as a result, the
Hall constant is very much larger than in the case of metals, and easier
to observe. With semiconductors, using Eq. (2-14) for the Hall constant,
and Eq. (1-6) for the conductivity, it has been possible in many cases
to establish reliable values for the separate numbers of positive and
negative carriers, and for the mobilities. In the next chapter we shall
see that another magnetic effect, the cyclotron resonance, and related
40 INSULATORS, SEMICONDUCTORS, AND METALS {Chap. 2
Then it is a straightforward task, using Eq. (1-8) for the Fermi distribu-
tion, to compute the sum iF(E) over all states of both spins. This, as
we have seen in Sec. 1-4, must equal N, the total number of electrons.
When we make this calculation as a function of Er, the result is as shown
in Fig. 2-3, where we have assumed, for simplicity, that m * for the con-
duction band equals m ** for the valence band. From this figure we
see that when Er is midway between the two energy bands, or in the
middle of the gap, T,F(E) will be equal to the number N of electrons
which must be accommodated. This then establishes the position of
the Fermi level and shows that the situation is more complicated than
for the case of the metal, where the Fermi level is just at the top of the
occupied bands.
rf(E)
Top of Now that we know the position of the
valence bond Fermi level, we can use Eq. (1-8) to find
+ the number of electrons in the conduc-
_ ___._-:::;;,,,-+-..:::.....-+-- E tion band and the number of holes in
Bottom of the valence band. At ordinary .temper-
conduction
bond atures, with ordinary semiconductors,
the energy gap is very large compared
Frn. 2-3. Number of occupied with kT. If !lE is the width of the
states, '2:-F(E), as function of
energy, for intrinsic semiconduc- energy gap, we then see that in the
tor. '2:-F(E) = D corresponds to expression of Eq. (1-8), where we hav~
enough electrons to balance posi- the exponential exp (E - Er)/kT, this
tive r,harge in crystal. exponential is at least as great as
exp (!lE/2kT) for all energy levels in the
conduction band, and unity can be neglected in comparison with it. That
is, if E is the energy of a level in the conduction band, measured up from
the bottom of that band, F(E) for one of the levels in the conduction
band will be given by
F(E) = exp (-!lE/2kT) exp (-Ek/T) (2-16)
If now we calculate the number of energy levels per unit range of energy,
using Eq. (1-13) or its equivalent, it is a simple matter of statistical theory
to convert the sum of F(E) into an integral, and carry out this integration
over the levels of the conduction band. 1 The calculation gives for the
number of electrons per unit volume in the conduction band
\' 2
I.. F(E) = h3 (21rm*kT)¾ exp (-AE)
2kT (2-17)
It is easy to show that the number of holes in the valence band, obtained
by summing 2(1 - N (E)] over the levels of that band, has the same
1 The method is given in J.C. Slater, "Introduction to Chemical Physics," McGraw-
has a fairly high dielectric constant, and this means that instead of the
factor 471'Eo in the denominator of the expression of Coulomb's law we
must use 471'E, where E is the permittivity of the dielectric, greater than
Eo by a factor equal to the dielectric constant. Thus the Coulomb force
will be a number of times smaller than the field of a proton.
In this perturbing field the energy levels of the electrons will no longer
be as they would be in an unperturbed periodic potential. In Sec. 2-1
we have shown how to handle a wave packet in the presence of such a
perturbation as we have here; we see that it moves like a particle of
mass m* (if we are in the conditions where we can use Eq. (2-8)], in the
presence of the potential V1 . The derivation of Appendix I shows that
in a case like this, we can also set up a Schrodinger equation for a particle
of mass m* in the potential V1 and treat the perturbed wave functions
according to wave mechanics; our earlier results on the motion of wave
packets are really only the limiting case of the wave-mechanical method
applied to the classical limit. An electron in the field of our impurity
atom will then obey a Schrodinger equation like that of a particle of
mass m * in a Coulomb field which is a number of times smaller than the
field of a proton.
This Schrodinger equation is, of course, just like the hydrogen problem,
except for the magnitudes of the charge and mass, and it will have corre-
sponding solutions, corresponding to the wave functions and energy
levels of hydrogen. The effect of the smaller Coulomb force is to decrease
the magnitudes of the energies and increase the size of the orbits. The
same effect will also arise from the mass m *, which is found in this case
to be considerably less than the real electronic mass. The net effect,
then, is to have in the neighborhood of the impurity atom wave functions
for the electron, like hydrogen wave functions, only on such an extended
scale that they spread over many atom diameters, with energy levels
like the hydrogen spectrum, but on a much smaller energy scale, the Is
level corresponding, not to the 13.6 volts of the Rydberg energy, but
perhaps to Yi o volt, if we use reasonable estimates of the constants
involved. In addition to these discrete levels, there will be the con-
tinuum of levels associated with energies so high that the electron can
escape from the ion. This continuum of levels corresponds essentially
to the conduction band.
When we look a little more closely into the relation between these
levels and those which would be present in the absence of the impurity
atom, we find that the following situation holds: We draw in Fig. 2-4
the top and bottom of the conduction band, as well as the top of the
valence band, all modified by adding the V1 arising from the perturbing
atom, as a function of position at points of a line drawn through the
perturbing atom. The discrete impurity levels, arising as described in
Sec. 2-5}. ELECTRICAL CONDUCTIVITY IN METALS AND SEMICONDUCTORS 4S
the preceding paragraph, are shown in the figure, below the conduction
band. Their extension will be roughly in the region shown, where the
classical kinetic energy is positive. The levels of the continuum are also
shown, filling the energies of the unperturbed band. The wave functions
of this continuum are modified, however, by the presence of the impurity
atom. Our classical solution of Sec. 2-2, for the periodic potential plus
the perturbing field, implies that the classical velocity is real, provided
we are dealing with energies within an energy band, but goes to zero at
either edge of the band and is imaginary in the gaps between bands.
The corresponding solution of Schrodinger's equation falls off exponen-
tially when the conditions are such that we are in a gap. . Now in the
figure above, we see that the higher energy levels of the continuum lead
to a situation where the energy falls within the gap, at points near the
impurity atom, on account of the dis-
Conduction band
tortion of the boundary of the band by
the perturbing potential V 1 . Hence
the wave functions of these energy -._ _ ___
levels will fall off exponentially as we Donor level ~\.-=-7
Valence band
approach the impurity atom. By
more elaborate means, 1 we can show
that not only do these levels of the
continuum have a deficiency in their
wave function near the impurity atom Frn. 2-4. Valence and conduction
where the discrete wave functions bands near an n-type impurity atom,
have their intensity, so that the total showing donor levels.
charge density, if all levels are filled,
is relatively unaffected by the impurity atom, but also the total number
of levels in the band, including the discrete levels, is the same with the
impurity atom present as it was without. The number of discrete
levels introduced is just compensated by a decrease in the number of
levels in the continuum, corresponding to the decrease in effective volume
of the solid on account of the region cut out near the impurity atom by
this exponential decrease in the continuum wave functions as. they
approach the impurity atom.
We may now consider the effect of these modifications of the wave
functions and energy levels on the behavior of the substance. The
valence band will be modified just as the conduction band is, as we see
from Fig. 2-4. We recall that we have enough electrons to fill the
valence band, and one besides. The valence band, as we have just seen,
stili has the same number of energy levels, in spite of its perturbation.
Thus, when these levels are all filled, we shall have one electron left over.
1 This point, and others related to this treatment of impurity atoms, is taken up in
Appendix 2.
46 INSULATORS, SEMICONDUCTORS, AND METALS [Chap. 2
At the absolute zero, this will go into the next lower level available to it,
the lowest discrete level surrounding the impurity atom. Thus it will
be bound and not available for conduction. As the temperature increases,
however, it needs only a small amount of thermal excitation to raise this
electron to the continuous levels of the conduction band, so that it can
take part in conduction. Thus a much smaller temperature will lead to
appreciable conductivity than with an
~ Conduction band intrinsic semiconductor.
--------.....::::_ Of course, to have appreciable effect,
Impurity levels
we must have a good many of these
Volence band impurity atoms, though the necessary
number proves to be rather small com-
Fm. 2-5. Symbolic representation pared with the total number of atoms;
of impurity levels. 1 impurity atom to 1,000 is a large
number for this purpose. Let us as-
sume that we have impurity atoms of this sort distributed at random
through the crystal. At each of these there will be discrete impurity
levels, of the sort we have considered, the energy lying slightly below the
bottom of the continuous conduction band, and the corresponding wave
function localized in the neighborhood of the impurity atom. Such a
situation is often symbolized as in Fig. 2-5,
:U(E)
the dashes indicating impurity levels, the
conduction and valence bands being drawn
as they extend through the material.
Let us now inquire how the existence of Top of
volence
these impurity levels changes the statistical bond
situation. We have a certain, rather small
number of additional energy levels and an
equivalent extra number of electrons. We Bottom of
must now make a new plot of '1:,F(E) as a conduction
band
function of E F, in order to find the revised
Fermi level. By comparison with the plot
at the beginning of this section, Fig. 2-3, we
find that '1:,F(E) has not changed to an Fm. 2-6. Total number of
appreciable extent by the presence of the electrons as function of
impurity levels, on account of their small energy, n-type semiconductor.
number. However, the significant change
comes because this summation must now add to a larger total, on account
of the electrons donated by the impurity atoms. We then find EF as a
higher horizontal line, as shown in Fig. 2-6. This leads to a Fermi level
much closer to the bottom of the conduction band than before. As a
result of this, when we compute the number of electrons in the conduction
band, getting a result analogous to Eq. (2-17), we find in the exponential
Sec. 2-5} ELECTRICAL CONDUCTIVITY IN METALS AND SEMICONDUCTORS.. 47
not the energy difference AE/2, which was the distance from the Fermi
level to the bottom of the conduction band for the intrinsic semiconductor,
but the much smaller value which we have just found. This results in a
much increased number of electrons in the conduction band. On the other
hand, in computing the number of holes, we have to use the energy differ-
ence between the new Fermi level and the top of the valence band, which
is much larger than for the intrinsic case, and the result is that there are
many fewer holes than before. In this case it is obviously no longer
necessary for the number of electrons to balance the number of holes;
rather, the number of electrons, minus the number of holes, gives the
number of electrons contributed by the impurity atoms.
The general behavior of the number of conduction electrons in this
case is then as follows: At the absolute zero of temperature, there are
none. We do not have to go to a very Logorithm of
high temperature, however, to excite conductivity
the electrons from the impurity atoms,
so that we have a contribution to the Intrinsic conductivity
number of conduction electrons, equal
approximately to the number of im-
purity atoms, which remains approxi-
mately independent of temperature up
to high temperatures. As the tempera-
ture is increased, the intrinsic conduc-
tivity starts, and at sufficiently high
temperature it becomes greater than
the conduction arising from impurities. 1/r
Thus if we plot the logarithm of the Fm. 2-7. Logarithm of conduc-
conductivity as a function of 1/T, the tivity of semiconductor as function
result is as in Fig. 2-7. The straight line of I/T.
represents the intrinsic conductivity,
the slope being connected with the quantity AE/2, as we have seen earlier.
However, at larger values of 1/T (that is, lower temperatures), the con-
ductivity, instead of continuing to decrease as it would for an intrinsic
semiconductor, becomes approximately constant. At even lower temper-
atures it would start to decrease again, but in many actual cases it is not
followed down to low enough temperatures to observe this phenomenon.
The type of semiconductor which we have been discussing is that in
which there are impurities which can give up electrons to the conduction
band; as we have mentioned earlier, these are called n-type semiconduc-
tors, and their impurities are of the donor type. We have mentioned
that there also exist p-type semiconductors, with acceptor-type impuri-
ties, which result in conduction by holes, or positive carriers. Impurities
of this type are substituted atoms which have too few electrons to take
48 INSULATORS, SEMICONDUCTORS, AND METAL~ [Chap. 2
~Conduction bond
Volence bond
Fm. 2-8. Valence and conduction bands near a p-type impurity atom, showing
acceptor levels.
where m is the electronic mass. The reason for the name cyclotron reso-
nance is that in a cyclotron, in which we have positive ions in a constant
49
so INSULATO~S, SEMICONDUCTORS, AND METALS [Chap. 3
(o)
C=:> 0 C=:>
0
0
( c)
0
(d)
would have one axis (which proves to be the major axis) along one of the
eight directions similar to 111; on account of symmetry around this axis,
it is easily shown that the other two axes of the ellipsoid must be equal
to each other (in the actual case, the minor axis). The ellipsoids then
would have to be cigar-shaped. The e0nters of these ellipsoids would
be at the points L in the momentum space. If then the magnetic field
were along the x axis, a surface perpendicular to this field would cut the
eight ellipsoids in four elliptical curves, as shown in Fig. 3-Ia. These
Sec. 3-2] CYCLOTRON RESONANCE AND RELATED PHENOMENA 53
In other words, we can set up strips parallel to they axis, of width h/eBY 1
along the x direction, and of length Y1 along y, so that each strip has an
area of h/eB. Each level is assigned, so to speak, to one of these strips.
The number of degenerate levels is the number of strips which can fit
into the cross-sectional area X 1 Y 1 of the container in a plane perpendicu-
lar to the magnetic field.
The treatment which we have given, following the method of Landau,
is perfectly correct, but it does not show any obvious relationship to
the circular orbits which we have discussed in Sec. 3-1. On account of
the high degree of degeneracy, we can make linear combinations of func-
tions of one energy (that is, one value of the quantum number n, and
56 INSULATORS, SEMICONDUCTORS, AND METALS [Chap. 3
one k,), and find many alternative forms of the solution. In the next
section, we shall show that by setting up a solution in cylindrical coordi-
nates, we can get results suggesting the circular orbits much more directly.
3-3. Free Electrons in a Magnetic Field in Cylindrical Coordinates.
Instead of proceeding as in the preceding section, using rectangular
coordinates, let us set up cylindrical polar coordinates r, cJ,, z, and express
Schrodinger's equation in these coordinates. It is more convenient for
this purpose to write the vector potential in the form
A 11 = ½xB A.= 0 (3-11)
which leads to the same magnetic field as the vector potential of Eq. (3-4).
When we substitute this into Schrodinger's equation, Eq. (3-3), we find
2 2
- -h
2m
2
V 2if, - -iehB
2m
( - y -iJ
iJx
+ x iJy
-iJ) if, + -e B (x + y )if, =
· Sm
2 2 Eif, (3-12)
E = (n + + !)
j
2
ehB
m
+ k;h2
2m
(3-18)
The energy which we have found agrees with the value of Eq. (3-8),
if we identify the present integer n +
j with then of Eq. (3-8). We have
a different form for the wave functions, however, though by general
principles we know that one of the wave functions corresponding to a
given energy must be capable of being expressed as a linear combination
of the functions for the same energy determined by Landau's method.
This linear combination, however, may be very involved, and our present
method obviates the need of finding it.
Let us now consider the general nature of this solution. The depend-
ence on <f, is exp ij<f,, as in any cylindrically symmetrical problem. The
function R, a radial wave function, has nodes arising from the poly-
nomial; there are n nodes. Just as with the hydrogen problem, the
equivalent of the classical circular orbit is that for which the radial quan-
tum number n is zero. In other words, for the circular orbit, we have
11 = r; exp [-('11'eB/2h)r 2] (3-19)
In R = j In r - 'll'eB r 2
2h
d In R j 1reB
~=;:-Tr (3-20)
d 2 In R j 1reB
dr 2 = - r2 - h
The first derivative, d In R/dr, is zero when
That is, the area of the orbit (if it is considered to be a circle of radius r,
where the wave function has its maximum) is j times the fundamental
unit h/ eB which we discussed in the preceding section. For this value
of r, the second derivative is -2'Jl'eB/h. Hence we can start a Taylor
expansion of In R in the form
In R = constant - (1reB/h) (r - yjh/1reB) 2 + ··· (3-22)
which is a Gaussian function which has its maximum when r has the value
given by Eq. (3-21).
The function which we have given in Eq. (3-23), which is approximately
equal to the true wave function for n = 0, would be the exact wave func-
tion for the ground state of a linear-oscillator problem in which the poten-
tial energy had a minimum at r = yjh/1f'eB, and for which the angular
frequency of the oscillator was the cyclotron frequency, as one can verify
from the solution of tl).e linear-oscillator problem. This solution, for the
ground state of the oscillator, can be written in the form exp [ - (1rmw/h)x 2],
where xis the displacement, m the mass, w the angular frequency. This
would agree with Eq. (3-23), if we had w = eB/m, the cyclotron fre-
quency. We can see why we have this relationship, by considering the
limit of Eq. (3-15) for large values of the quantum number j.
In the limit of large j, the wave function would be concentrated near
the circle whose radius is given in Eq. (3-21), and which therefore corre-
sponds to larger. In this limit, the term 1/r dR/dr can be neglected in
Eq. (3-15) in comparison with d 2R/dr 2• Furthermore, the effective
potential energy,
1,,2p
--
2mr 2
+ --
e2n2
8m
r2 (3-24)
ehjB
2m
+! B 2 (r _
2 m
e2 {]h)
'\J;;Ii
2
(3-25)
Aside from the additive term ehjB/2m, this is the potential energy of a lin-
ear oscillator of angular frequency w = eB/m, centered at r = yjh/1f'eB.
It is only natural, then, that the ground-state wave function should be
that of such an oscillator. Furthermore, the energy of the ground state
of the oscillator would give the correct energy of the problem. From
Eq. (3-15) we see that the energy E equals ehjB/2m + k!h.2/2m plus the
energy of the linear-oscillator problem. The latter contributes the addi-
tive term ehjB/2m, adding to the similar term already present, as well
as the ground-state energy of the oscillator, ½hw. Hence we find for
the energy the amount (j + ½)hw + k!h 2/2m, as we should have.
Not only the state n = 0 of the radial problem is given by the linear-
oscillator case, but higher states as well. From Eq. (3-16) we see that
the states for n ~ 0 consist of the function which can be approximated
by Eq. (3-23), multiplied by a polynomial of degree n. This is the form
which we should have for the state of a linear oscillator corresponding
to quantum number n. Furthermore, examination of the polynomials
given by Eq. (3-16) and comparison with the polynomials met in the
Sec. 3-3] CYCLOTRON RESONANCE AND RELATED PHENOMENA 59
along the z direction, and waves with different but neighboring values
of j to localize it with respect to the angle cJ,, which would be necessary
to get a wave packet relatively concentrated in phase, so that an external
electric field of angular frequency w could resonate with it, and cause
the packet to absorb energy. We should ordinarily also use a superposi-
tion of waves with values of n close to zero, to get just the desired wave
packet. But the net result would be very much like a packet circulating
around the circular wave function given by our solution corresponding
to n = 0. The reason for using this solution, in other words, is to get a
good physical picture of the wave function corresponding to the classical
circular orbit, just as a hydrogenic wave function corresponding to zero
value of the radial quantum number resembles the classical circular
Bohr orbit.
Now that we have worked out our wave functions for the circular
orbits, we note one very interesting fact, which has been emphasized
by Onsager: 1 the areas of the circular orbits are quantized, as we see from
Eq. (3-21); they are integral multiples of the fundamental unit h/ eB.
This statement of course cannot be taken in a rigorous fashion, since
there is no rigorous way of defining the radius of a wave function, but
it holds if we define it as the radius at which the wave function has its
maximum value, as we have done in deriving Eq. (3-21). Onsager states
this result in a slightly different way. He notes that the flux of magnetic
field through the orbit equals the area times the magnetic field (which
is normal to the orbit). Thus, from Eq. (3-21), this flux, which is 1rr2B,
equals jh/ e:
Magnetic flux through orbit = jh (3-27)
e
rem, stating that the magnetic flux through an orbit equaled jh/ e, where
j is a quantum number, has a fundamental significance, holding not
merely for free electrons but for electrons in a periodic potential as well.
As a first step in discussing this situation, we shall show that for free
electrons there is a close connection between Eq. (3-27) and the Sommer-
feld quantum condition. We shall find, in fact, that !f p • dr, integrated
around the orbit, equals jh, and that this relation is equivalent to Eq.
(3-27).
In discussing this relation, we must recall that the relation between
momentum and velocity in the presence of a magnetic field is not the
simple one which we have in the absence of a field. By one of Hamilton's
equations, we have
dx iJH Px + eAx
dt = Vx = ilpx = m (3-28)
with similar results for Vv and v,. Let us set up a classical motion in a
circle surrounding the origin, with radius R. We have x = R cos wt,
y = R sin wt, Vx = dx/dt = -wR sin wt, Vy = wR cos wt. Furthermore
we have Ax = -yB/2 = -(RB/2) sin wt, Av = xB/2 = (RB/2) cos wt.
Thus we have
Px = mvx - eAx = ( -mwR + eRB/2) sin wt
= ( -eRB + eRB /2) sin wt = - (eRB /2) sin wt
(3-29)
Pv = mvy - eAv = (mwR - eRB/2) cos wt
= (eRB - eRB/2) cos wt = (eRB/2) cos wt
Let us now use these results to compute !f p • dr = !f p · v dt. This
is the sum of !f Px dx and !f Pu dy, and we should expect it to be quantized
according to Sommerfeld's quantum condition; we shall consider the
reason for this later. We have
P · V = PxVx+ PvVb = (ERB/2)wR(sin 2 wt + cos 2 wt)
= eR Bw/2
2 (3-30)
Since this is a constant, its integral with respect to time, around a com-
plete cycle, equals its constant value, multiplied by the period of rotation,
which is 2n-/w. Hence we have
!fp • dr = (eR 2Bw/2)(2n-/w) = 1rR 2eB (3-31)
If we set this integral equal to jh, we have
R,2 = jh (3-32)
1r ' eB
in agreement with Eq. (3-21).
We may ask why Sommerfeld's quantum condition should be expected
to hold, in this form. We recall its fundamental meaning: it states that
62 INSULATORS, SEMICONDUCTORS, AND METALS [Chop. 3
saying that the time rate of change of the quantity -lik is given by the
classical force acting on the electron. We recall that this equation gives
Sec. 3-5] CYCLOTROM RESONANCE AND RELATED PHENOMENA 63
dk = -e (dr
h dt dt X B) (3-34)
where we have replaced the velocity v of the wave packet by dr/dt, where
r is its vector position. Since B is a constant magnetic field, we may
integrate this equation with respect to time, and we obtain
hk = -e[(r - ro) X BJ + hko (3-35)
Here we have introduced quantities r0 and k 0 of the nature of constants
of integration, whose behavior we shall now describe.
The quantity liko represents the constant component of crystal momen-
tum. The quantity ro has a component along B equal to the component
of r along B, so that r - ro is at right angles to B. The component of ro
at right angles to B is arbitrary, but independent of time, allowing the
orbit to be centered at any point of space. We see that dro/dt is parallel
to B, so that it makes no contribution to dk/dt. It is the drift velocity
of the electron along the direction of the field, which is effective in setting
up the helical motion, and the vector r - r 0 represents the projection of
the orbit in the plane perpendicular to the field, which is required for
the application of Onsager's theorem.
From Eq. (3-35) we see that the vector h(k - ko), the component
of the vector position in momentum space perpendicular to the
magnetic field, is at right angles to the vector r - ro, the projection
of the radius vector in ordinary space on the plane perpendicular to the
field. An immediate result of this fact is that the orbit of the wave
packet in k space is similar to the projection of the orbit in ordinary space
on a plane perpendicular to the magnetic field, but rotated through 90°
[!bout the direction of the magnetic field, and the areas are related by
the equation
e2s2
Area of orbit in k space = ¥
X projected area of orbit in ordinary space (3-36)
Now let us find the quantity §p • dr, which we have seen in the preced-
ing section should equal Jh, where j is a quantum number. The integra-
tion is to be around the projected orbit in the plane perpendicular to the
magnetic field. From Appendix 1 we know that
hk = p + eA (3-37)
Thus we must find §(lik - eA) • dr. Now from Eq. (3-35) we know
that hk = -e[(r - r 0) X BJ + hk 0 • As for the other term, the expres-
64 INSULATOl!S, S_EMICONDUCTORS, AND METALS [Chap. 3
Now ½J'[(r - ro) X d(r - ro)] equals in magnitude the area of the pro-
jection of the orbit in ordinary space on the plane perpendicular to the
magnetic field, by familiar vector geometry, since ½[(r - r 0) X d(r - r 0)]
is the area of a triangle formed from the vectors r - ro and d(r - r0), and
the sum of all such triangles equals the area of the orbit. The quantity
½J'[(r - ro) X d(r - r 0)] is a vector, perpendicular to the plane of the
orbit, and therefore parallel to B, so that the scalar product in Eq. (3-40)
is merely the magnitude of B times the magnitude of the area of the
orbit. Hence we have
where we have set the phase integral J'p • dr equal to jh, as in the case
of free electrons. In Eq. (3-41) we have the generalization of Eq. (3-32)
to the general case of electrons moving in a periodic potential, verifying
the general significance of Onsager's theorem.
_From Eq. (3-36) we can transform Eq. (3-41) into a form involving
the area of the orbit ink space. We have at once
(3-43)
where we have chosen the zero of energy to lie at the bottom of the energy
band, and have chosen the rectangular axes to lie along the principal
axes of the ellipsoid. This means that the axes may be rotated with
respect to those natural to use considering the crystal symmetry. We
shall consider magnetic fields oriented in any arbitrary way with respect
to the coordinates.
We now recall that the area of a triangle formed from the vectors
k - ko and d(k - ko) is ½[(k - k 0) X d(k - k 0)], and that if we inte-
grate this around the orbit, we get the area of the orbit in k space. Fur-
thermore, from Eq. (3-33), we have Ji d(k - ko)/dt = -e(v X B). We
then have
1 [ (k - ko) X d (k dt
2
- ko) ]
= - 2eh [(k - k 0) X (v X B)]
- 2~ (v[(k - ko) · BJ
- B[(k - k 0) • vl) (3-44)
where we have used a vector identity. Since k - ko is perpendicular
to B, the first term on the right side vanishes, and Eq. (3-44) reduces to
!2 [(k - k)
° X
d(k -
dt
ko)] = eB2h [(k - k). ]
O V
eB [ aE
= 2t,,2 (k - ko)x okx
+ (k - ko)v akv
aE + (k aE]
- ko), ak,
_ eBE _ eB (ko,,kx + kouku + ko,k,) (3_45 )
- Ji 2 2 m,, my m,
E = wh2 f b' . k
21reB X area o or 1t m space
+h 2 ( k5:,,
2mx
+ k5y
2my
+ ko,)
2m,
= jhw + Ji2 ( 2mx
k5x + k5y + k5,)
2my 2m,
(3-46)
in which we have used Eq. (3-42). The first term in Eq. (3-46) repre-
sents the quantized energy arising from the motion in the plane per-
pendicular to the magnetic field, and the remaining terms represent the
kinetic energy of motion along the direction of the field.
The first point to notice regarding Eq. (3-46) is that the energy is
related to the cyclotron frequency by an equation like Eq. (3-8), as in
Landau's theory of free electrons. The angular frequency w is still the
cyclotron frequency, j is a quantum number, but since we are using the
Sommerfeld quantum condition, rather than using wave mechanics, we
do not have the half quantum number found in the expression n + }'2
in Eq. (3-8); this modification should properly be made in Eq. (3-46).
Next, by analogy with Eq. (3-1), we may define an effective mass m*
related to the cyclotron frequency for a magnetic field in an arbitrary ·
direction, by the equation w = eB/m*. We may also define a second
effective mass, m**, such that the last terms in the energy, in Eq. (3-46),
arising from the drift velocity, can be written in the form h 2k~/2m **.
In terms of these two effective masses, Eq. (3-46) can be rewritten in the
form
(3-47)
(3-48)
1 See W. Shockley, Phys. Rev., 90 :491 (1953), for formula form* and its application
-eB ( -k. Ol - -
k., 'Y) (3-49)
dt m. m.,
dk,
dt
= -eB (k., /3 _ a)
m., my
k.11
We now take the case where the crystal momentum is constant, that
is, where there is no elliptical motion, so that the area of the orbit in k
space, as given in Eq. (3-46), is zero. To have the crystal momentum
independent of time, the right side of each equation of Eq. (3-49) must
vanish. We shall have this situation, as is obvious by inspection, if
(3-50)
From this equation we see that the constant crystal momentum is not
in the direction of the magnetic field; if it were, the components ko.,, koy,
ko, themselves would be in the ratio of a to {3 to 'Y, rather than the ratios
ko.,/m.,, etc. The reason for this is simple. With an ellipsoidal energy
surface, as is given in Eq. (3-43), the velocity is not in general parallel to
the crystal momentum. The velocity, given by the equation v = (1/h)
gradk E, has components hko,/m.,, hk0y/m,11 hko./m.. From Eq. (3-50) we
see that these components are in the ratio of a to {3 to 'Y, so that it is the
velocity, rather than the crystal momentum, which is parallel to the mag-
netic field, as is required by the condition that v X B should be zero for a
constant crystal momentum. The magnitude of the velocity is hko/m **
Let us now satisfy Eq. (3-50) by the assumption
where m** is given in Eq. (3-48). Thus we have verified this part of
Eq. (3-47).
Next we shall consider the cyclotron frequency, and the determination
of the cyclotron mass m*. We let the crystal momentum be the sum
of the constant value which we have just been discussing, and a time-
dependent part, representing the rotation about the elliptical path in k
space found as the intersection of the energy surface of Eq. (3-43), and
the plane corresponding to a constant component Po of crystal momentum
along the direction of the magnetic field. As far as the constant part
of the crystal momentum is concerned, it gives no contribution to either
side of Eq. (3-49). These equations therefore can be considered as the
equations relating the time-dependent parts of the components of the
crystal momentum. If we had m., = mu = m,, we should have in Eq. -
(3-49) the equations of motion of a free electron in a magnetic field, which
we have already solved. The treatment we use is one which reduces
Eq. (3-49) to this form. We let
1 a 2mx + f1 m + 'Y m.
2 11 2
(3-56)
m *2 = - m.,mymz
which agrees with the value of m* given in Eq. (3-48). Thus we com-
plete our discussion of the correctness of this equation.
Sec. 3-7) CYCLOTRON RESONANCE AND RELATED PHENOMENA 69
For the part of the energy arising from the quantized motion, we find
in Eq. (3-46), for the ellipsoidal energy surface, that we have
Energy = jhw = jh11 = J 11 (3-60)
or k space. Hence in this general case we shall have the cyclotron fre-
quency given by
aE 211" aE
"' = 211"11 = 211" - = - X . .
aJ eB a(area m ordmary space)
= 211"eB X aE (3-61)
h, 2 a(area in k space)
falls to 1/e of its value in a distance defined as the skin depth o, given
by the formula 1
o=~ (3-62)
(1961-1962, Sb; 1963, KCl), R. N. Dexter (1954, Ge; 1955, Bi; 1956, Si,
Ge; 1959, CdS), R. B. Dingle (1956), B. Donovan (1962-1963, Ge), Ya. G.
Dorfman (1956), G. C. Dousmanis (1960-1962), G. Dresselhaus (1953,
Ge; 1955, Si, Ge, lnSb, Ge-Si alloys), M. S. Dresselhaus (1962), R. C.
Duncan, Jr. (1962, Ge), Y. Eckstein (1965, Bi), W. E. Engeler (1963, Bi),
G. E. Everett (1962, Bi), V. Evtuhov (1962), E. Fawcett (1956, Sn, Cu;
1959-1960, Al; 1962, W), Yu. A. Firsov (1959), R. C. Fletcher (1955),
M. Fukai (1964), A. A. Galkin (1963, Al), J. K. Galt (1955, Bi; 1956,
graphite; 1959, Zn, Bi; 1960, Zn; 1961, Cd), G. M. Genkin (1962), L. Gold
(1956), R. R. Goodman (1961, Ge), C. C. Grimes (1963, Al, Na, K),
G. E. Gurgenishvili (1964, Ge), Yu. A. Gurvich (1963), J. Halpern (1964),
E. Hanamura (1962, Ge), H. Hasegawa (1963, Si), L. C. Hebel (1965,
Bi), V. Heine (1957), J. C. Hensel (1959-1960, 1962, Ge; 1965, Si), R. C.
Hwa (1958), M. Inoue (1962, graphite), M. C. Jones (1960, 1964),
Yu. Kagan (1960, Ge, Si), K. K. Kanazawa (1964, CdTe), E. A. Kaner
(1957-1958), Y. H. Kao (1963, Bi; 1964, Bi-Sb), H. Kawamura (1962-
1964, Ge), D. C. Kelly (1957), R. J. Keyes (1956, Bi, lnSb, InAs),
M. S. Khaikin (1959-1960, Sn; 1962, Pb, Bi), A. F. Kip (1957, Sn; 1960-
1961, Cu), C. Kittel (1957), T. Kjeldaas, Jr. (1959), J. F. Koch (1962,
Sn; 1964, Cu), W. Kohn (1961), L. I. Korovin (1961), W. Kroll (1930),
L. Landau (1930), D. N. Langenberg (1959, Al, Cu; 1964, Au), B. Lax
(1956, Bi; 1957, graphite; 1960, Bi; 1961, lnSb; 1962), V. N. Lazukin
(1956), B. W. Levinger (1960-1961, Ge), I. M. Lifshits (1961-1962),
V. N. Lugovoi (1961), J. M. Luttinger (1955, Ge; 1956), D. C. Mattis
(1959), W. Mercouroff (1961-1962, Ge), P. B. Miller (1962), D. L.
Mitchell (1963, Ge), S. J. Miyake (1965), T. W. Moore (1962, Al), T. S.
Moss (1959, GaAs, InP, InSb; 1964, AlSb, GaP), R. Nii (1963-1964,
PbTe), Y. Nishina (1962), P. Nozieres (1958, graphite), H. Numata
(1964, PbTe), T. Ohta (1959-1960), M. Okazaki (1962, Ge), E. Otsuka
(1964, Ge), E. D. Palik (1961, lnSb, InAs, InP, GaAs; 1963, lnAs),
J. C. Phillips (1959-1960), G. E. Pikus (1961), H. Piller (1963, GaSb),
P. M. Platzman (1964), A. M. Portis (1959), J. J. Quinn (1965), E. I.
Rashba (1960), R. R. Rau (1955, Ge), C. J. Rauch (1960, Si; 1961-1962,
diamond), B. W. Roberts (1961, Ga), S. Rodriguez (1958), A. C. Rose-
Innes (1958, Ge, Si), B. Rosenblum (1961), L. Rosenfeld (1929), L. M.
Roth (1959, 1964), H. Sato (1963, Ge), K. Sawamoto (1963-1964, CdS),
K. Sekido (1964), S. S. Shalyt (1962, InAs, InSb), W. Shockley (1953),
G. E. Smith (1963, Bi), S. D. Smith (1959, InSb), F. W. Spong (1965, Al),
M. C. Steele (1955, Sb), M. J. Stephen (1959), M. J. Stevenson (1959,
CdAs2; 1961, 2-5 semiconductors), P. J. Stiles (1962, PbTe), P. M. Stone
(1965), M. Suffczynski (1961, Ge), H. Suzuki (1961-1962), M. Tinkham
(1956, Bi), A. V. Tolub (1959), Yu. I. Ukhanov (1962, Si), R. F. Wallis
(1958, InSb), W. M. Walsh, Jr. (1962, W), A. K. Walton (1962, Pb
Sec. 3-9] CYCLOTRON RESONANCE AND RELATED PHENOMENA 75
sidered independent of time, during the mean free time of the electron
in its orbit. As the wave packet representing the electron circulates
around its orbit, it will be pushed in one direction by the electric field at
one extremity of its orbit, in the other direction by the field at the other
extremity, as shown in Fig. 3-2. Since it is circulating, both these pushes
will be in the direction of rotation, and will accelerate the electron,
thereby extracting energy from the ultrasonic vibration, and leading to
attenuation. In other words, if the ultrasonic wavelength is properly
chosen, we shall have attenuation, but not otherwise. The principal
y
effect will come from the electrons
at the Fermi surface (for they are
the only ones capable of having
collisions, and therefore absorbing
energy), and we have in this
way a means for finding the diam-
+-----+------4------1------4-x eter of the cross section of the
Fermi surface. Here, as with the
de Haas-van Alphen effect, it is
the extreme orbit which will con-
Frn. 3-2. Diagram to illustrate ultra- tribute the greatest amount to the
sonic absorption by cyclotron resonance experiment.
in transverse magnetic field. Ultra-
sonic sound wave is propagated along x. This ultrasonic effect and the
It is assumed to be a transverse wave, de Haas-van Alphen effect both
with oscillation along y, producing a have the advantage over cyclotron
transverse electric field, as indicated by resonance for a metal, in that they
arrows a half wavelength apart. Mag- depend on fields (the magnetic field,
netic field along z, perpendicular to
paper, resulting in circular cyclotron and the ultrasonic vibration), which
orbits assumed to be of size shown, such penetrate the metal without trou-
that the electric field will accelerate ble, in contrast to the high-fre-
electrons at both extremities of orbit, quency electromagnetic field in-
Producing resonance. volved in cyclotron resonance,
which is limited by the skin depth.
A number of other experiments have also been suggested and used 1
for giving information about the Fermi surface. Fortunately they give
results in general agreement with each other, and with the results of
energy-band calculations. These comparisons have been made in most
deta1l for copper, and in the next section we shall consider the Fermi
surface for that element, as an example of what may be expected for
other materials.
3-10. The Fermi Surface for Copper. The experiments, of the type
discussed in the preceding section, led to the form of the Fermi surface
1 For a discussion of some of these, see W. A. Harrison and M. B. Webb (eds.), "The
Fermi Surface," John Wiley & Sons, Inc., New York, 1960.
Sec. 3-10] CYCLOTRON RESONANCE AND RELATED PHENOMENA 79
for copper before the theory was able to give it,1 but in Volume 2, Sec.
10-5, we have quoted results of recent calculations of the energy bands
of copper, not available when the experiments were carried out, but which
lead to full agreement with experiment. We have stated in that section
that the energy bands were rather free-electron-like in the neighborhood
of the Fermi surface. If they were really free-electron-like, the Fermi
surface would be a sphere, capable of holding one electron per atom, and
therefore having a volume half the Brillouin zone. In this case, since
this sphere is contained entirely within the Brillouin zone, the Fermi
energy would intersect the energy
bands along the 100, lll, and llO
directions within the Brillouin zone.
We see, however, from Volume 2,
Fig. 10-22, that this is not the case:
along the 111 direction, the direction
A, the Fermi energy lies above the
point L~, within the large gap be-
tween the energies L~ and Li, a gap
which would not be present in the
free-electron case, as shown in Vol-
ume 2, Fig. 10-2. The consequence
of this is that the Fermi surface,
rather than being spherical, extends
outward along the 111 directions, FIG. 3-3. Intersection of Fermi sur-
and cuts the hexagonal faces of the face of copper with plane including 100,
110, and 111 directions (from center of
Brillouin zone. This is shown in Brillouin zone, r, to points X, K, and L,
Fig. 3-3, in which we show an inter- respectively). [From calculations of
section of the Fermi surface with a Segall, Phys. Rev., 125 :109 (1962), and
plane including the 110 and lll Burdick, Phys. Rev., 129:138 (1963).]
directions. We see that the ap-
proximately spherical Fermi surface has necks extending out to each of
these hexagonal faces.
When we consider the periodic nature of the reciprocal space, we see
that the Fermi surfaces in different unit cells of the reciprocal space join
each other by means of these necks, so that instead of having a separate
closed surface in each unit cell, there is one surface extending through all
space. This is better shown in Fig. 3-4, in which a model of the Fermi
surface has been constructed, and is shown in perspective, first within
one Brillouin zone, then as it extends through space. A situation of
this sort is much commoner in real metals than isolated closed surfaces
such as ellipsoids.
1 A. B. Pippard, Phil. Trans. Roy. Soc., A250:325 (1957). D. Shoenberg, Phil.
Trans. Roy. Soc, A255:85 (1962).
'
80 INSULATORS, SEMICONDUCTORS, AND METALS [Chop. 3
The experiments which have been done on copper all verify in detail
this form of the Fermi surface, and the quantitative results are in very
close agreement with the theory. We see, then, that the cross sections
of the orbits which are detected by cyclotron resonance or de Haas-van
(al
(b)
Fm. 3-4. Perspective of Fermi surface for copper, in single Brillouin zone (a) and in
several adjacent cells (b). Note resemblance of (b) to section shown in Fig. 3-3.
Point L in Fig. 3-3 is center of hexagonal face in Fig. 3-4a.
Alphen effect are quite different from what one might have expected at
first sight. Thus, if the magnetic field is perpendicular to the orbit
shown in Fig. 3-3, it is the electrons circulating around the empty space
whose cyclotron frequency is observed. If the magnetic field is per-
pendicular to a hexagonal face, one can have electrons circulating around
Sec. 3-10] CYCLOTRON RESONANCE AND RELATED PHENOMENA 81
the small cross section of one of the necks. In these ways, and by use
of other orientations of the magnetic field, one finds experimentally a
number of cyclotron frequencies, or a number of areas of cross sections,
which can be identified with these various features of the Fermi surface.
If the magnetic field were oriented in some arbitrary direction, not
in a symmetry direction, orbits are possible which never close, but which
go an infinite distance through the reciprocal space (and correspondingly
are infinitely long in ordinary space, though of course really they would
be stopped after a short time by collisions). In Fig. 3-5 we show an
Fm. 3-5. Open orbit in copper, along Fermi surface as shown in Fig. 3-4. It is
essential that such open orbits pass from one unit cell to the next by means of the
necks joining the portions of the Fermi surface in different unit cells.
in which open orbits are possible, and where they are not. Striking
results are found from such experiments, in the way of very large differ-
ences in behavior for small changes in angle. Though we are still in the
early stages of being able to correlate the results of these experiments
with energy-band calculations, it is clear that such experiments will
throw a great deal of light on the nature of the energy bands.
A great deal of experimental work on magnetoresistance has been
carried out, leading to much useful information regarding energy-band
properties. References in the Bibliography at the end of this volume
will be found to this work under the following authors:
r,
. I
~ I - - - Experimental
0 I _.T7 Burdick
-i I I
0
.
C
I
I
I
I
I
I
I
I l
-8 -6 -4 -2 0 2 4 6 8 10 12 14 16 18
Energy minus Fermi energy, eV
Frn. 3-6. Estimate of density of states in copper. [From Berglund and Spicer, Phys.
Rev., 136 :A1044 (1964).] The dashed curve indicates the density determined
experimentally, from photoemission. The solid curve is from the calculation of
Burdick cited in description of Fig. 3-3.
i
C
2.0
..f"L"L Calculated - Burdick density of states
8
·='
~ 1.5
~
-0
0
.!cc
"'
0
.I:; 0.5
0 .____ _.___-'------'------'----'--L--~--~
0 2 4 6 8 10 12 14
Photon energy, eV
Frn. 3-7. Imaginary component of the dielectric constant for copper, from Berglund
and Spicer (loc. cit.). The optical data from Ehrenreich and Philipp are from Phys.
Rev., 128 :1622 (1962); the calculations of Burdick are those quoted in Fig. 3-3.
lattice vibrations; in Sec. 10-4, with cohesive energy; in Sec. 11-7, papers
dealing with problems in which the many-body aspect is a leading feature
of the treatment, including plasma oscillations.
These special lists do not include by any means all the papers listed in
the Bibliography, most of which deal with one aspect or another of the
problem of electrical or thermal conductivity, or other aspects of transport
theory, and with the application of these methods and others to the inter-
pretation of the properties of specific materials. In many cases, papers
using several experimental techniques deal with the same types of materi-
als. For that reason it is convenient to list the authors of papers dealing
with each general type of material. Such a list follows. The reader
should remember in this connection that the a priori calculations dealing
with energy bands of the various materials are discussed in Volume 2 of
this series, and a bibliography is given in that volume of calculations of
energy bands, which is not duplicated in the present volume.
Our list covers first the semiconductors and insulators, then goes on to
metals. It includes treatments of the energy bands, effective masses,
Fermi surfaces, etc., as determined by many different sorts of experiments,
such as those taken up in Chaps. 2 and 3, but also optical experiments and
others. We subdivide the papers into general categories of materials,
rather than listing each individual material separately.
Diamond, Silicon, Germanium, 3-5 and 2-6 Compounds
B. Abeles (1954, Ge), M. S. Abrahams (1959, In-GaAs), D. G. Adrianov
(1964, Ge), Ya. Agaev (1964, InSb), P. Aigrain (1955-1956, InSb), J. W.
Allen (1956, Ge), Kh. I. Amirkhanov (1961-1963, InSb, InAs), J.· B.
Arthur (1958, Ge), D. M. S. Bagguley (1961, Ge, Si; 1963, InSb), P. I.
Baranskii (1964, Ge), L. C. Barcus (1958, GaAs), J. Bardeen (1956-1958,
Ge, Si), G. A. Barnes (1958, Ge), R. T. Bate (1959, InSb), W. M. Becker
(1961, GaSb), R. L. Bell (1957, Ge, Si), G. Bemski (1960, InAs), G. B.
Benedek (1955, Ge), C. Benoit (1963, Ge), W. Bernard (1963-1964, Ge),
G. L. Bir (1961, InSb), J. L. Birman (1961-1962, ZnS, diamond), J.
Blanc (1961, GaAs), F. J. Blatt (1957, Ge, Si), E. Blount (1956, InSb),
H. C. Bolton (1961, diamond), I. M. Boswarva (1962, Ge; 1964, InSb),
W. S. Boyle (1957, InSb), R. Braunstein (1958, Ge-Si; 1959, GaAs), H.
Brooks (1955, Ge, Si), R. F. Broom (1956-1958, InSb), J. J. Brophy
(1956, diamond), M.A. C. S. Brown (1961, Ge), D. Brust (1964, Ge, Si),
W. M. Bullis (1956-1958, Ge), F. P. Burns (1957, InSb), E. Burstein
(1953, Si; 1956, Si, InSb), M. Cardona (1958-1960, Ge, Si; 1960, GaAs,
GaSb; 19Gl, lnAs, GaAs, InP; 1963), G. B. Carpenter (1960, diamond),
J. A. Carruthers (1957, Ge, Si), T. G. Castner, Jr. (1962, Si), C. H.
Champness (1957, InAs; 1958, InSb), V. A. Chuenkov (1958, Ge), C. D.
Clark (1959, 1964, diamond), P. E. Clegg (1964, diamond), E. M. Conwell
Sec. 3-11] CYCLOTRON RESONANCE AND RELATED PHENOMENA 87
(1956-1960, Ge, Si), J. H. Crawford, Jr. (1955, Ge), P. Csavinsky (1963, Si,
Ge), D. Curie (1957, ZnS), A. J. Darnell (1964, InSb), W. G. Dash (1955,
Ge, Si), P. P. Debye (1954, Ge), R. N. Dexter (1954-1956, Ge, Si; 1959,
CdS), J. R. Dixon (1957, InAs), B. Donovan (1962-1963, Ge), G. Dressel-
haus (1953-1955, Ge, Si; 1955, InSb, Ge-Si), W. P. Dumke (1956, Ge;
1957, InSb), R. C. Duncan, Jr. (1962, Ge), H. Ehrenreich (1956, Ge;
1957-1959, InSb; 1959, InAs-P; 1960, GaAs; 1961, 3-5 compounds; 1962,
4,13-5, and 2-6 compounds), S. G. Ellis (1958, ZnS), I. Estermann (1950,
Ge), V. Evtuhov (1962, Ge, Si), I. G. Fakidov (1958, Ge), H. Y. Fan
(1955, Ge, Si; 1956-1959, Ge), G. Fischer (1958, InSb), P. Fisher (1962,
Ge), S. J. Fray (1960, InSb), H.P. R. Frederikse (1955-1957, InSb; 1958,
InAs), H. Fritzsche (1958-1960, Ge), Y. Furukawa (1963, Ge), V. V.
Galvanov (1957, InSb), T. H. Geballe (1958-1959, Ge), A. F. Gibson
(1958, Ge), M. Glicksman (1956, Ge-Si; 1957, Ge; 1959, InP, GaAs), L.
Gold (1956-1957, Ge, Si; 1959, Ge), C. Goldberg (1957-1958, Ge), 0. A.
Golikova (1961, Ge), R. R. Goodman (1961, Ge), Yu. I. Gorkun (1961,
Ge), J. Goroff (1963, Si), E. F. Gross (1957-1961, CdS; 1961, GaP), H.
Gummel (1957, Si), G. E. Gurgenishvili (1964, Ge), R.R. Haering (1958,
Ge), H. D. Hagstrum (1959, Si), K. C. Hambleton (1961, GaAs), E.
Hanamura (1962, Ge), P. Handler (1960, Ge, Si), N. J. Harrick (1956-
1958, Ge), H. Hasegawa (1963, Si), J. C. Haslett (1959, InSb), J. R.
Haynes (1955, Si), J. C. Hensel (1960, Si; 1962, Ge; 1965, Si), C. Herring
(1958, Ge), C. Hilsum (1958, InSb), M. V. Hobden (1962, Ge), D. J.
Howarth (1957, InSb), H.J. Hrostowski (1955, InSb; 1957, Si + 0), L.
Huldt (1958, Si), C. S. Hung (1950, Ge), A. R. Hutson (1957-1959, Zn0),
Yu. Kagan (1960, Ge, Si), A. H. Kahn (1955, Ge, Si), H. Kamimura
(1963, Ge, Si), Y. Kanai (1957, Ge), H. Kawamura (1962, Ge), F. Keffer
(1960, CdS), P. J. Kemmey (1961, diamond), R. J. Keyes (1956, InSb,
InAs), R. W. Keyes (1958, Ge, Si), R. H. Kingston (1956, Ge), C. Kittel
(1954, Ge, Si), W. Kleiner (1955, Si; 1959, Ge), L. Kleinman (1962-1963,
Si), C. C. Klick (1951, diamond), lVL I. Klinger (1957, Ge, Si), S. H.
Koenig (1957-1962, Ge), W. Kohn (1957, Si, Ge), C. S. Koonce (1964,
Si), L: L. Korenblit (1964, InSb), V. A. Kovarskii (1957, Ge), W. E.
Krag (1964, Ge), N. I. Kurdiani (1963, InSb), S. Larach (1957, ZnS-Se-
Te), B. Lax (1955, Ge, Si; 1960, Ge; 1961, InSb, 3-5 compounds), M.
Lax (1955, Si; 1958, diamond type), B. W. Levinger (1960-1961, Ge),
L. Liu (1961, Si), D. Long (1957-1958, Si), T. A. Longo (1959, Si), J. M.
Luttinger (1955, Ge), K. B. McAfee (1951, Ge), G. G. Macfarlane (1955-
1959, Ge, Si), I. M. Mackintosh (1955-1956, InSb), P. Manca (1961,
diamond and zinc-blende structures), A. Marcus (1964, GaAs), V. S.
Mashkevich (1957, diamond type), M. Matyas (1962, GaSb), J. G.
Mavroides (1957, Ge, Si), C. A. Mead (1963, AlAs, AISb), W. Mercouroff
(1961-1962, Ge), H. J. G. Meyer (1958-1959, Ge), R. E. Michel (1961,
88 INSULATORS, SEMICONDUCTORS, AND METALS [Chap. 3
aB
curl E = - -
at div B = 0 I
curl H = J + J' + Eo aE = J + a(EoE + P) (4-4)
at at
Eo div E = p - div P div (EoE + P) = p
we find that the last two of Maxwell's equations take their standard form,
with
p
Ke= 1 + -E
Eo
(4-6)
Drude and Lorentz next assumed that the dielectric contained N elec-
trons J>Cr unit v<dume, each ol,eying a differential e4uation
d 2x E
m dt 2 + mg dtdx + mw x 2
0
_
- - c (4-8)
98 INSULATORS, SEMICONDUCTORS, AND METALS [Chap. 4
Here - e and m are the charge and mass of the electron, x is its displace-
ment, g a frictional constant, and wo the resonant angular frequency, de-
scribing the restoring force proportional to the displacement. If we
assume that E and x vary as ei"'t (where eventually we are to take the real
part of this expression), then we find
x _ _-__,_(e..:..../m---'-)E_
(4-9)
- wi - w2 + iwg
The polarization is then
p _ E Ne 2/m (4-10)
- wi - w2 + iwg
so that we have
_ 1+ Ne 2/mEo (4-11)
Ke-
w0 - w2 + •iwg
2
(4-12)
n = y';. (4-18)
In Chap. IX, just quoted, the corresponding formulas are given for the
case where absorption cannot be neglected.
These results are all very familiar, and we have gone over them mainly
to have the equations available, for further use. It is also well known
that Lorentz, and almost simultaneously another worker named by coinci-
dence Lorenz, 1 made an extension of the theory, resulting in what is
called the Lorentz-Lorenz correction. We shall take it up in the next
section.
4-2. The Lorentz-Lorenz Correction. We have tacitly assumed in
writing Eqs. (4-8), (4-9), and (4-10) that the force acting on the charge
-e, which leads to one of the dipoles, was -eE. Lorentz suggested,
however, that we should take a more microscopic look at the problem.
We assume that on a microscopic or atomic scale, E varies from point
to point within the unit cell of a crystal, and that the E which we are
dealing with in Maxwell's equations is the average over space of the
microscopic electric field. Lorentz asked: Is it obvious that the field
1 H. A. Lorentz, Wied. Ann., 9:641 (1880). L. Lorenz, Wied. Ann., 11 :70 (1880).
100 INSULATORS, SEMICONDUCTORS, AND METALS [Chap. 4
acting on a dipole equals this average value? Might it not be that the
dipoles are at special positions, at which the field is consistently different
from the average value?
He made the situation clearer by an argument which we can easily
state in a simplified form. If we have a cavity in the interior of a dielec-
tric, the field acting on a particle at the center of the cavity depends on
the shape of the cavity. Thus, in "Electromagnetism," chapter IV,
sec. 7, it is pointed out that if we have a long needle-shaped cavity, point-
ing in the direction of the electric field, the value of E at the center of the
cavity is the same as the E within the dielectric medium. On the other
hand, at the center of a flat disk-shaped cavity whose normal points
along the direction of the field, the field is D / Eo, or E + P / Eo. The rea-
son for the difference is found in the field produced by surface charges
which appear on the surfaces of the cavity, on account of the discon-
tinuity of the dielectric at the surface. Other shapes of cavity have
intermediate fields. Thus, at the center of a spherical cavity, the field is
in mks units
(4-19)
in Gaussian units
which implies that it is the field E + P /3Eo which polarizes the dipoles.
If we assume Eq. (4-20) instead of (4-10), and combine with Eq. (4-6),
we may then divide by e0E, and find
Ke - I = (1 + ~-=--!) 1"'\'
3
(k) Nke2/meo_
wi - w2 + iwgk (4-21)
Sec. 4-2] THE DRUDE-LORENTZ THEORY OF INSULATORS 101
if the relation that the force acting on a dipole equals E + P/3Eo should
not hold in this form, but should be different for different directions of
the field, we should have the machinery for setting up a theory of double ,'
~ - '
refraction. Such a possibility seems very natural. If the surroundings ,,,
of an atom were of ellipsoidal symmetry, for instance, it is obvious from
the examples we have given that there would be a different force acting
on the dipole, depending on which axis of the ellipsoid the field was
oriented along. It would be rather easy to set up such a theory, with
the atoms located at centers of ellipsoids, but Ewald was more ambitious:
he wished to consider an actual lattice of dipoles, and to calculate the
field which would in fact act on one of the dipoles, to produce its polariza-
tion. We shall go on in the next section to a discussion of Ewald's
method.
4-3. Ewald's Treatment of Polarization in a Dielectric Crystal.
Ewald's procedure was straightforward. He assumed that the dipoles
were arranged at points of a Bravais lattice, which he took to be ortho-
rhombic, but which we can equally well take to be a general Bravais
lattice. He assumed only one dipole per unit cell, but it is easy to extend
the problem to the case of several dipoles per unit cell, one on each type
of atom. He assumed that all dipoles were oscillating sinusoidally, with
phases which varied from one unit cell to another as in a damped plane
wave. He computed the field produced by all these dipoles, setting up a
solution of Maxwell's equations such as would be produced by the dipoles.
Then he applied a condition of self-consistency, essentially equivalent to
Eq. (4-20): the polarization set up in a dipole equaled that produced by
the field actually located at this dipole. The difference between his
analysis, and that of the preceding section, in other words, is that he
rigorously solved Maxwell's equations for th_e field found in the lattice
of dipoles, and rigorously evaluated this field at the position of one of
. the dipoles.
The first thing which one needs to carry out this program is a conven-
ient way of handling the field of oscillating dipoles. This is provided
by the well-known Hertz solution of Maxwell's equations, from which
Hertz was led to the idea of radio propagation from dipole antennas.
The Hertz solution,, in mks units; is the following: We set up a vector
function of position and time, the Hertz vector Z, in terms of which we
define E and B by the equations
E = curl curl Z + v z - -c1 a-otz
2
2
2
2
(4-23)
1 az
B = c2 curl at
Then we find that the vectors E and B so defined automatically satisfy
the first two Maxwell equations, curl E = -aB/at and div B = 0, and
Sec. 4-3] THE DRUDE-LORENTZ THEORY OF INSULATORS 103
they satisfy the second two of Eq. (4-1), along with Eq. (4-2), provided
Mk 3 2i 2 ]
Er = 47rEo exp [i(wt - kr)] cos 0 (kr) 2 + (kr) 3
• [
Mk 3 k )] . [ 1 i 1 ]
E e = 41rEo exp
[ .(
i wt - r sm 0 - kr + (kr)2 + (kr)a (4-26)
H <b =iwMk
~exp
2
[ .(
i wt - k r)] sm
. 0 [ kr
i + 1 ]
(kr) 2
where kr and k; are the real and imaginary parts of the wave vector, and
r is the radius vector. It is pointed out in "Electromagnetism," chap. X,
sec. 7, that it is not necessary that kr and k; be vectors in the same direc-
tion, though for the present purpose we do not need to go into such
complications.
We then wish to assume that at the lattice point Rn we have a dipole,
whose resulting Hertz vector is given by Eq. (4-25), but with the exponen-
tial function and its denominator given by
exp i[wt - (kr + ik;) · Rn - (w/c)\r - Rn\]
(4-28)
\r - Rn\
The straightforward summation of these expressions, for an infinite lattice
of dipoles, would be an impractical task, but this was circumvented by
Ewald in the following manner: He noticed that the Hertz vector Z,
regarded as a function of position throughout space, satisfied a wave
equation, as given by Eq. (4-24), with singularities only at the lattice
points where dipoles we,re located. He knew, by Floquet's theorem,
which we discussed at length in Volume 2, that in such a case we can get
a solution in the form of a plane wave, times a periodic function of posi-
tion, repeating in each unit cell. We know that such a periodic function
Sec. 4-3] THE DRUDE-LORENTZ THEORY OF INSULATORS 105
(4-31)
Since the polarization near the origin is zero except at the origin itself,
where it has an infinite value such that the integral over the singularity
is M exp iwt, we wish to have Z show the proper behavior at the origin.
First let us expand the polarization itself in an expansion of terms like
that of Eq. (4-30). Let us assume that ·
P = 2:(K)B(K) exp i[wt - (k, + i'ki) · r - K,. · r] (4-32)
so that the expansion
2:(K)B(K) exp -iK,. • r (4-33)
represents a function which is zero except immediately surrounding each
of the lattice points Rn, but integrates to M over the neighborhood of one
of the lattice points. To find the B(K)'s, we multiply Eq. (4-33) by the
conjugate of one of the plane waves, namely, by exp iK~ • r, where K~ is
one of the vectors of the reciprocal lattice, and integrate over the unit
cell in real space. This cell includes one lattice point, that at the origin.
Since the function exp iK~ • r equals unity here, the integral must be M.
106 INSUl:ATORS, SEMICONDUCTORS; ANO METAL-$ [Chap. 4
This must equal -1/Eo times the expansion of Eq. (4-32), where B(K)
is given by Eq. (4-34). Putting these together, equating the two expres-
sions term by term, we have
M
w2
A(K) [ c2 - (k, + i'k; + K,.)2 ] = - EoO (4-36)
From this expression we can at once find A(K), substitute into Eq. (4-30),
and get the complete expression for the Hertz vector, which is
We expect, then, that it represents the ordinary field which would arise
if we had a continuous distribution of polarization, rather than a discrete
collection of dipoles.
To verify this, let us assume that the complete Hertz vector consisted
only of its leading term,
z= _ M exp i[wt - (k, + iKi) • r] (4-38)
ton w2
2 -
C
(k, + iKi)2
To interpret the situation, let us find the electric field arising from this
Hertz vector. Rather than using Eq. (4-23) for E, it is more convenient
to use the vector identity
curl curl Z = grad div Z - V2Z
. 1 a2z
so that E = grad div Z - c2 at 2
If we had only the leading term in Z, there would be nothing in the theory
which could lead to double refraction, so that we should find that E, P,
and D were all parallel to each other. In such a case, we can prove in
the familiar way from Maxwell's equations that the electric field vectors
must be normal to the wave vector. Thus, if E, P, D, and M are along x,
the vector k, + ik; can have no x component. Then in computing div Z,
we must take aZ,j ax, which will be the only term, since Z also will have
only an x component. But since (k, + ik;),, = 0, the function of Eq.
(4-38) will not depend on x, div Z will be zero, and we shall have
1 a2z
E=-c2aif
in the unit cell at position Rn, Rince the volume of the unit cell is n,
the polarization is the dipole moment per unit volume, or
E = P/to (4-42)
c2
2
w
(k, + ik;) 2 - 1
We may now proceed as in Eq. (4-20), use the fact which we have proved
in Eq. (4-44) that the first term of Eq. (4-46) is the ordinary average
electric field E, and state that
(4-47)
which shows that we are led to the same result as with the Lorentz-
Lorenz method.
This verification of the result of Lorentz, from a precise calculation
of the field at an atomic position of cubic symmetry, is a special case.
It is all that Lorentz's method is capable of giving, but we can apply
Ewald'R method as well to points which do not have cubic symmetry.
Thus it is possible by this scheme to lead to dielectric constants of the
crystal which are different in different directions, and hence to double
refraction. Unfortunately, as we shall mention in the next section, com-
paratively little use has been made of this elegant method, which in
principle is capable of giving detailed information about problems of
double refraction.
4-4. Calculations of Dispersion in Insulating Crystals. Before we can
consider the progress which has been made in applying the theory we
have dRsc,ribed in the preceding sections to actual cryctab, we must make
connections with the quantum theory of atomic polarization. It is well
known [see for instance J. C. Slater, "Quantum Theory of Atomic Struc-
ture," vol. 1, McGraw-Hill Book Company, New York, 1960, eq. (6-57)]
110 INSULATORS, SEMICONDUCTORS, AND METALS [Chop. 4
'\' ( ) Nfmne 2 /m
Moment = ~ n ¢ m w!m _ w2 (4-48)
Here we are assuming that the atoms are in the mth stationary state,
and we are summing over other stationary states, denoted by n, to which
transitions might be made. The angular frequency Wnm is that deter-
mined by Bohr's frequency condition for the transition from one state
to the other, liwnm = En - Em. The quantity f mn is a so-called oscillator
strength, given by
(4-49)
netism," chap. IX, sec. 2. 1 Let us go back to Eq. (4-8), and insert the
Lorentz correction directly into that equation. That is, we note that
we could rewrite this equation in the form
m
d2x
dt2 + mg dx
dt + mwoX -
2 _
-e
(
E
P)
+ 3Eo (4-50)
In other words, the effect of the Lorentz correction has been thrown into
the form of a change of the resonant frequency, so that instead of w~ as
its square, we have w~ - Ne 2/3E 0m. If now the term Ne 2/3Eom were
large enough, it could cancel w~, and result in an effective natural fre-
quency which could go to zero, leading to an infinite index of refraction,
or dielectric constant, at zero frequency.
This extreme case does not occur, and if one studies the possible densi-
ties of dipoles, their resonant frequencies, and other features of real
crystals, one sees that it would be practically impossible to have N e2/3Eom
as large as w~. We see, however, that if the Lorentz factor were modified,
so that if instead of½ we had a larger factor, this would help the process
along. A study by the present author 2 has shown that at least in some
ferroelectrics, the arrangement of ions is such that the factor, computed
by Ewald's method, is considerably greater than½. In addition to this
fact, there is another source of dielectric behavior, which we have not
yet taken up: the motion of positive and negative ions in opposite direc-
tion, under the action of the external field. We shall come to this type
of dielectric action later in Chap. 7, where we discuss lattice vibrations.
It seems likely that ferroelectric action is primarily an effect of lattice
polarization of this type, helped along by a Lorentz factor larger than½.
But we are far from having a complete explanation of this phenomenon.
1 ·This method and an extension to the case of more than one resonant frequency
are given in the textbook "Lehrbuch der Optik," by K. Fi:irsterling, S. Hirzel Verlag
KG, Stuttgart, 1928, secs. 3b and 3c. This text in a sense is a successor to that of
Drude (loc. cit.).
2 J. C. Slater, Phys. Rev., 78 :748 (1950). See also H. C. Schweinler, Phys. Rev.,
87:5 (1952); J. R. Tessman, Phys. Rev., 83:677 (1951).
5
The Drude-Lorentz Theory of the Optical
Properties of Meta Is
Ne 2/mEo
Ke= 1 + -w 2 + iwg
• (5-1)
1 See for instance C. G. Darwin, Proc. Roy. Soc. (London), A146 :17 (1934), for
We recall that the real part of the index of refraction, y;z, determines
the velocity of propagation of the wave, and the imaginary part deter-
mines the damping. It is customary to write
Ke = (n - ik) 2 (5-2)
. (t
E = E 0 exp iw c
- nx) exp -
-wkx
c- (5-3)
n2 - k2 = 1 - Ne2/meo
w2 + g2 (5-4)
2nk = fl. Ne /me 0 2
w w2 + g2
Let us now discuss the nature of these equations. We note in the
first place that, by dimensional arguments, two quantities of the dimen-
sions of an angular frequency appear, in addition to w itself: g and
vNe 2/meo- We shall call the latter quantity Wp, and shall come back
to a discussion of its significance in the next section, where we shall show
that it is what is called the plasma frequency:
Ne 2
w2 = - (5-5)
P meo
From Eq. (1-3), we can then set up still a third quantity of the dimensions
of a frequency: u / e0, which can be written in the form
-u = -
Ne 2
- = w2
2 (5-6)
Eo mgeo g
from which we see that wp is the geometric mean of the frequency u/e 0
and of g, which as we see from Eq. (1-2) is merely the reciprocal of the
time t 0, which we have seen is closely related to the time between colli-
sions of the electron.
It is interesting to take actual numbers for real conductors, and see
what these frequencies are. If we take the conductivity of copper at
room temperature, and assume that we have one free electron per atom,
Sec. 5-1] THE DRUDE-LORENTZ THEORY OF METALS 115
we can find u/Eo and wp, and hence from Eq. (5-6) we can find g. We
find the following values:
n2 = 1 - Ne2/mEo = 1 -
w2 _
(wp)2
w
(5-8)
Thus when w is very large compared with wp, the index ofrefraction will be
very slightly smaller than unity. We shall note later that the same thing
is true in the x-ray region even when we include the effect of polarizable
dipoles, and this phenomenon, of an index slightly below unity in the
x-ray region, is a well-known effect verified experimentally.
As we go to lower frequencies, we see from Eq. (5-8) that n 2 will go to
zero as w is reduced to equality with wp. As we have seen, for copper
this happens in the far ultraviolet. The significance of n going to zero
can be seen from Eq. (5-3). We may rewrite this equation in the form
E = E 0 exp i(wt - 21rx/X) exp -wkx/c (5-9)
where Xis the wavelength, equal to 21rc/nw. As n goes to zero, the wave-
length becomes infinite, so that the whole electronic structure of the
crystal oscillates in phase. This, as we shall show in the next section,
is one characteristic of the plasma oscillation which gives its name to wp.
We recall that at th1s frequency the damping constaIJt k is still negligible,
on account of the small value of g.
We should remark that there is nothing contrary to the principle of
relativity involved in this situation, though the reader might well feel
1·
'·{
so that the group velocity, far from going infinite as n goes to zero, instead
goes to zero itself, and it is less than c all through the frequency region
we are considering.
Once the frequency goes below the plasma frequency, which as we
have seen for copper is in the far ultraviolet, the quantity 1 - (wp/w) 2
becomes negative, and from Eq. (5-4) we must now use a different solu- ·
tion. The quantity g is still negligible compared with w, so that 2nk is
still essentially zero, but this must now happen by having n = 0, and
k ':;6 0. In this case we have
k2 = (wp/w) 2 - 1 (5-13)
n = k = ~ = ✓2:w (5-14)
from which the current density, -Nev = -Ne dx/dt, is related to the
field, by the relation
Current density = mg(l ~ 2iw/g) X electric field
(5-16)
. . Ne 2 1 - iw/g
Conduct1v1ty = mg 1 + (w/g) 2
the microwaves, we shall be able to neglect w/g, so that we can use the
d-c conductivity to predict the behavior of the material.
In the radio-frequency range, it is of interest to look at the rate of
damping of the electromagnetic wave. From Eq. (5-9) we see that the
disturbance will fall to 1/e of its value in a distance c/wk. This distance
is ordinarily called the skin depth, denoted by o. If we use Eq. (5-14),
we find
(5-17)
(1947). For other papers in the Bibliography at the end of this volume dealing with
this topic, see papers by the following authors: E. R. Andrew (1949), M. Ya. Azbel
(1955, 1958, 1962), J. R. Beattie (1957), R. G. Chambers (1950-1956), J. G. Collins
(1958), R. B. Dingle (1950-1956), V. F. Gantmakher (1963), A. N. Gordon (1953),
M. I. Raga.no,· (1956-l\J57J, D. C. l\1attiR (l!l58), A. B. Pippard (1947-1954), G. E.
H. Reuter (1948), I. N. Shklyarevskii (1959), V. P. Silin (1957), G. E. Smith (1960),
E. H. Sondheimer (1954), K. F. Wojciechowski (1962-1963). Pippard (Zoe. cit.) has
shown that this phenomenon can give valuable information about the Fermi surface
of metals.
Sec. 5-2) THE DRUDE-LORENTZ THEORY OF METALS 119
p
al
= Ne- (5-18)
ax
But by one of Maxwell's equations we have div D = p, and in this case,
where we are disregarding any dielectric effect, this is Eo div E = p. Since
we are assuming E to be along x, we then have
aEx al (5-19)
t o - = Ne-
ax ax
which can be integrated to give
Ne
Ex= - l (5-20)
Eo
Now by the :Maxwell equation curl E = -aB/at = -µ.o aH/at, one finds
curl aH = - _!_ curl curl E (5-23)
ot /J.O
If we are dealing with a case in which the electric field arises from a
potential rather than from electromagnetic induction, we shall have curl
E = 0, which Tonks and Langmuir assumed. In this case the left
side of Eq. (5-22) is zero, and if we insert Newton's law in the form
m dv/dt = -eE, we find
a2 E Ne 2
E o - +-E = 0 (5-24)
ot 2 m
Eq. (5-10) the group velocity is zero. This checks our earlier statement
that the group velocity goes to zero at the plasma frequency. It shows,
however, that we can have disturbances of more general dependence on
coordinates at this frequency than we should have suspected from the
discussion of the preceding section. In fact, the general derivation by
means of Eq. (5-24) shows that the disturbance can have any desired
dependence on coordinates, and yet it will still have the same angular
frequency wp.
We shall meet other examples of longitudinal electromagnetic waves
before we are through: in the oscillations of a crystal, we have oscillations
of what are called the longitudinal optical mode, which also have this
property, as we shall point out in Sec. 8-3. In all such cases, there is a
simple requirement which must be fulfilled to allow the oscillations: the
dielectric constant must go to zero. We can see this very easily. We take
Maxwell's equation div D = p, and assume that we are dealing with a
case where the only charge density concerned arises from the polarization,
RO that p = 0. If E has a component along the direction of propagation,
which then varies with distance in that direction, it is clear that we shall
not have div E = 0. Hence the only way to have div D = 0 is to have
the dielectric constant equal to zero. This is the condition which we are
assuming for the plasma frequency, in Eq. (5-8).
5-3. Later Developments in Plasma Oscillations. The general idea
of plasma oscillations, and their relation to the properties of metals, has
had a most interesting development since the time we have been writing
about, and we shall trace this history in the present section. It was not
realized at once that there was a relation between the plasma oscillations
of Tonks and Langmuir and the optical properties of metals. The plasma
oscillations themselves attracted the interest of the workers in the theory
of radio propagation in the ionosphere, which is a form of plasma with
very small numbers of electrons per unit volume, so that the plasma fre-
quency comes down into the range important for radio work. There was
considerable discussion as to whether the Lorentz correction should be
applied in plasma oscillations. Hartree,1 Tonks,2 Norton, 3 and Darwin 4
all took part in an exchange of views on the subject, the last word being
Darwin's paper, which we have already referred to in Sec. 5-1, concluding
that the correction should not be applied.
Just at the time that this discussion was under way, an entirely different
direction of development was started by the experimental observation of
1 n. H.. l-Jart.rec, Proc. Cambridge Phil. Soc., 26:97 (-1929), 27:143 (1932); Nature,
4 C. G. Darwin, Proc. Roy. Soc. (London), A146:17 (1934); Nature, 133:62 (1934).
122 INSULATORS, SEMICONDUCTORS, AND METALS [Chap. 5
the end of this volume, and in the list given in Sec. 11-7, during the years from 1950
to the present.
4 There are several review articles going into this problem. For the older experi-
mental work, one may see L. Marton, Rev. Mod. Phys., 28:172 (1956), and for the
theoretical side D. Pines, Rev. Mode Phys., 28 :184 (1956). As examples of recent
experimental work, see papers by J. D. Robins and P. E. Best (1962) in the Bibliog-
raphy, and the review article by 0. Klemperer and J.P. G. Shepherd (1963).
6 H. Frohlich and R. L. Platzman, Phys. Rev., 92 :1152 (1953). H. Frohlich and
H. Pelzer, Proc. Phys. 8nc. (London), A68 :525 (1955); "J\fax Planck Festschrift,"
published by Deutscher Verlag der Vv'issenschaften, Berlin, 1!J58, p. '277. See also
C. B. Wilson, Proc. Phys. Soc. (London), 76 :481 (1960), and for experimental results
more recent than some of those quoted earlier, C. J. Powell, Proc. Phy8. 8oc. (London),
76 :593 (1960).
124 INSULATORS, SEMICONDUCTORS, AND METALS [Chop. 5
(5-27)
We shall come back to this formula later in Sec. 5-4. In case the dielectric
constant is real, except for a very small imaginary part, there will be an
extremely high peak at the point where the real part K 1 goes to zero,
verifying the simple result which we have pointed out earlier, t,hat the
plasma oscillations occur at the point where the dielectric constant goes
to zero.
The type of excitation occurring in the plasma oscillation is very defi-
nitely a collective effect: all the electrons in the crystal are in a sense
oscillating together. Thus these effects cannot be explained at all by a
one-electron theory. This fact led into a general discussion of the relation
between plasma oscillations, and the proper way to handle electronic
interactions in a crystal. We shall come in Sec. 11-6 to this part of the
subject, and shall show how Bohm, Pines, and their collaborators have
been able by extensions of the theory of plasma oscillations to explain
many features of electron correlation, in ways which would be very difficult
to describe in terms of conventional methods of configuration interaction.
Thus this line of development, starting with the very simple electron
theory of metals of Drude and Lorentz, has led directly into some of the
most sophisticated parts of the modern theory of solids. Before we can
handle these problems, however, we must gain familiarity with many
parts of the theory of metals which we have not touched on so far in our
discussion.
Still another development of the ideaR of plasma oscillations is found in
extensions of the original problem in which they were observed, namely,
that of gas discharges. Modern interest has spread from ordinary dis-
charges, and from the problem of the ionosphere, to gases under such
extreme conditions of pressure and temperature as are found in stellar
atmospheres, in magnetohydrodynamics, and in nuclear-fusion problems.
· Here one still meets plasma problems, and in most cases meets them in
the pre.~ence of an external magnetic field. Thus one runs into a combina-
tion of the type of phenomenon met in the present chapter, and that
discussed in Chap. 3. This has led to an extensive development, which
we cannot touch on further in the present volume. The reader will find,
Sec. 5-4] THE DRUDE-LORENTZ THEORY OF METALS 125
:iowever, that some papers in this field are found in the list in Sec. 11-7,
:i,nd in the Bibliography at the end of the volume. The close connection
oetween solid-state theory, many-body quantum mechanics, and magneto-
hydrodynamics, which we find in the study of these phenomena, is one
which is likely to have important developments in the future.
6-4. Bound Electrons in Metals. In our treatment of metals so far,
we have proceeded from Eq. (5-1), assuming only free electrons. How-
ever, there is no reason for assuming that metals do not also have bound
electrons, like those in an insulator. They will give additional terms in
the dielectric constant, similar to those in Eq. (4-12), so that we may
expect that the whole dielectric constant will be of the form
of 500 to 600 A, that the transparency of copper beyond this frequency has
not been observed. This situation for copper has been discussed by C. B.
Wilson (Zoe. cit.) and H. Ehrenreich and H. R. Philipp (1962), who show
that the function of Eq. (5-27) has peaks coinciding with the observed
peaks in the energy loss.
We may make just one additional comment about Eq. (5-28). This
is that if we are considering x-ray wavelengths, where w is large compared
with all the natural resonances of the crystal (if we are dealing with hard
x-rays, and light elements), we can neglect all w!'s compared with w2 in
Eq. (5-28). Then we shall have
K =1_ (N + ~Nk)e /mfo
2
(5-32)
e w2
In other words, in this limit, all electrons, free and bound, are on a par
as far as their effect on the dispersion is concerned. This is the limit of
the Thomson scattering formula. As soon as the frequency gets to the
K absorption limit of the heaviest element in the crystal, however, we
shall come to the first resonance, and shall meet phenomena of absorption,
and anomalous dispersion, which are very characteristic features of x-ray
spectroscopy. A similar situation will be met at each of the absorption
limits corresponding to each of the types of bound electrons in the atoms
of the crystal. The behavior is not as simple as one would think at first
sight, for the electron can go into one of the excited energy bands of the
crystal, so that we have a continuum of absorption frequencies, and find
absorption at all frequencies above an absorption limit, decreasing in
intensity rapidly as we go to higher frequencies. These absorption phe-
nomena, and their related anomalous dispersion, have been the subject
of a great deal of research by the x-ray spectroscopists. We shall postpone
discussion of them to the next volume.
6-6. Bibliography on Optical Properties of Crystals. We have men-
tioned in this chapter and the preceding one that one can have optical
transitions of electrons in crystals from one energy band to another. In
simple cases, such as semiconductors, the absorption edges can give direct
information about widths of band gaps. In metals, we can have absorp-
tion from inner bands to levels above the Fermi level, helping to fix the
relative positions of these bands, as we have mentioned in Sec. 3-10 in
our discussion of copper. We shall not go further into the details of these
problems in the present volume. They are complicated by the formation
of excitons, which we touch on briefly in Appendix 2, but whose main
discussion will be postponed until the next volume. However, on account
of the close connection between the optical measurements and other types
of experimentations on energy bands, we list papers dealing with this
general subject in the Bibliography of the present volume. Papers dealing
130 INSULATORS, SEMICONDUCTORS, AND METALS [Chap. 5
with the optical properties of particular substances are listed in the bibli-
ography in Section 3-11. Those dealing with the properties in a more
general way, not tied to specific crystals, are found in the Bibliography
under the following au tho rs:
Wiss., 1912, p. 303. M. Laue, ibid., Hl12, p. 363. W. F:riedrich, P. Knipping, and M.
Laue, Ann. Physik, 41 :971 (1913).
2 W. H. Bragg and W. L. Bragg, Proc. Roy. Soc. (l,ondon), ABB :428 (1913); AB!l :246
(1913). W. L. Bragg, Proc. Cambridge Phil. Soc., 17 :43 (1913). Other references in
Bibliography.
3 W. H. Bragg, Phil. Trans. Roy. Soc. (London), A216 :253 (1915).
discussion of x-rays, which the less detailed model of Drude and Lorentz
was not. All he had to do was to reduce the assumed wavelength of the
electromagnetic radiation to the x-ray range to produce a theory of x-ray
diffraction. Thus his methods led to a very sophisticated theory of x-rays,
the so-called dynamical theory of x-ray scattering. This method, and
other equivalent methods, had a feature that the simpler treatments such
as that of Bragg lacked: they took into account multiple reflection, or the
interaction of the various plane waves within the crystal representing the
various scattered waves. We shall take up this method in Sec. 6-3, where
we shall see that there is a very close relationship between the x-ray
scattering problem and the calculation of energy bands in crystals, which
we have taken up in Volume 2. The simpler methods are similar to the
treatment of energy-band theory by using a single plane wave, or a com-
bination of very few plane waves. Ewald's method, on the other hand,
is equivalent to a rigorous treatment of the problem of expanding the
solution in plane waves. In other words, the mathematical difficulties
of solving such a periodic-potential problem had already been overcome
for the x-ray problem by 1916, and we have discussed this method in
Volume 2, Sec. 9-3. It is significant that Ewald, in the first paper quoted
above, gives a reference to a solution by Lord Rayleigh 1 for a similar
problem, in 1892.
These various treatments of x-ray scattering form really a branch of
optics, and they have close connection with many of the other topics
taken up in this volume. Consequently we shall treat them in this
chapter. We start with the simplest and most elementary type of dis-
cussion, following more closely the ideas of the Braggs than of the other
workers. Then in later sections we shall come to the more sophisticated
developments.
Let us make connection with our treatment of scattering by a free
electron, which was mentioned in Chap. 1. If we have an electron not
acted on by either restoring or resistive forces, its equation of motion is
m d 2x/dt 2 = -eE, so that if the field is sinusoidal with angular frequency
w, we have -mw 2x = -eE, or x = eE/mw 2 • The dipole moment arising
from this electron is then -ex, or
e2
M = - - -2 E (6-1)
mw
which leads to a polarization, or dipole moment per unit volume, of
Ne 2
P = - - --2 E (6-2)
rnw
where N is the number of electrons per unit volume. By Eq. (4-6) this
1 Lord Rayleigh, Phil. Mag., 34 :481 (1892).
Sec. 6-1] THE THEORY OF X-RAY DIFFRACTION 133
unimportant, except for the phase arising from the expression exp
i(wt - kr). Thus essentially we can disregard everything in the formula
except this exponential.
The phase of the oscillating dipole in dv is of course determined by the
phase of the incident wave at its position. The phase of its contribution
at the distant point where the scattered wave is observed is determined
by the path difference from a wave front of the incident wave, to a wave
front of the scattered wave, as compared with the contribution of an atom
at the origin O in the figure. From the figure we can see that this resulting
phase difference is greater than that arising from the atom at the origin
!
by the amount k • r, but smaller by the amount (k + K) • r, so that the
space-dependent part of the exponential is different by a factor exp iK , r t
from that scattered from the origin, where now we are using r as the vector
J
distance from the origin to the volume element dv. [Note that this is
different from the r in Eq. (4-25), which is the distance from the dipole to
the point where the field is being observed]. We shall then be able to
I
find the amplitude of the scattered wave by integrating over the volume
elements, or by computing
.f exp (iK • r)N dv (6-3)
But this is just the way to find a Fourier component of the charge density,
corresponding to the wave vector K. Hence we see the important fact,
pointed out by W. H. Bragg in the reference cited above, that the scatter-
ing in a given direction is determined by one of the Fourier components
of charge density.
In order to carry out the Fourier transformation of the charge density
properly, we should be making an integration over a crystal containing a
great many atoms. On the other hand, our geometrical assumptions are
based on a crystal very small compared with the distance from it to the
point of observation. These two conditions are not incompatible, on
account of the extremely small interatomic distances, provided the sample
is of ordinary size. If we are dealing with an excessively small sample, as
for instance a fragment of very fine powder, the small size of the sample
becomes significant, and shows itself in a broadening of the sharp peaks
predicted by Bragg's law. This is a very simple and elementary thing
to work out, and is of experimental importance, but we shall not interrupt
the continuity of our argument at this point to go into the matter; we
take it up in Sec. 6-6.
Since the charge density in a perfect crystal is a periodic function,
repeating in each unit cell, we know from the study of periodicity in
Volume 2 that the integral in Eq. (6-3) will be zero unless K is one of the
vectors of the reciprocal lattice. Hence we verify our derivation of Volume
2, Sec. 7-6, in which we have postulated that we have Bragg reflection
Sec. 6-2} THE THEORY OF X-RAY DIFFRACTION 135
only in case K is one of these reciprocal lattice vectors. But now we see
that the amplitude of the scattered wave, whose square will give the
intensity, will contain as a factor the Fourier component given by Eq.
(6-3). This fact is the basis of a large development in x-ray crystal
structure, in which the intensities of the various scattered beams are
measured experimentally, and the Fourier components so determined are
used to make a Fourier synthesis of the charge density, allowing one to
determine this directly from experiment. An account of the first steps
taken to use this method in practice is given by W. L. Bragg, 1 in a paper
in which he expounds the methods used in ma:king a practical Fourier
synthesis. The great difficulty with the method is that, though one can
find the Fourier amplitude!? experimentally, the experiment gives no infor-
mation about the phases, namely, whether we are dealing with sine or
cosine terms, and this vital information must be found by use of other
experimental facts. Also there are experimental complications arising
from many points of the theory which we have passed over without com-
ment in this very superficial discussion, but which in fact are of great
importance when one wishes to proceed in a quantitative way.
Though the connection of a Fourier component of scattering density
with the scattering in a given direction was first discussed for the x-ray
problem by W. H. Bragg in 1915, such connections are nothing new in
optics, as was pointed out by W. L. Bragg in the paper just cited. He
notes that such a situation is found in Abbe's theory of the microscope,
dating back to the last century. Abbe was interested in the microscope's
ability to resolve a repeating pattern, and he considered this problem in
two steps. First, he found the diffraction pattern produced by the
incident light when scattered by the periodic scatterer, and then he asked
how this diffraction pattern would be synthesized by the lens system into
an image. Naturally in discussing the diffraction pattern of the periodic
scatterer he ran into the same mathematics which one finds in x-ray
scattering. In x-rays we do not have the equivalent of the lens system,
and the Fourier synthesis produced mathematically, resulting in a picture
which is substantially a magnified image of the atoms, produces results
essentially equivalent to those of the optical microscope, as has been
emphasized by numerous writers in the more recent development of
x-ray methods.
6-2. The Atomic Scattering Factor and the Structure Factor. 2 We
have pointed out that at the time that the pioneer work on x-ray diffrac-
tion was being done, knowledge of atomic structure was in a very early
1W. L. Bragg, Proc. R,oy. Soc. (London), A12S:537 (1929).
2For a further reference on this topic, and all developments of this chapter, see
R. W. James, "The Optical Principles of the Diffraction of X-rays," G. Bell & Sons,
Ltd., London, 1948.
136 INSULATORS, SEMICONDUCTORS, AND METALS [Chap. 6
stage. However, it was a very natural thing to assume that each atom
consisted of a spherically symmetrical distribution of charge density, and
that the crystal as a whole had a charge density which was the superposi-
tion of the spherical atomic charges. This assumption leads to a treat-
ment of the Fourier components of Eq. (6-3) which is fundamental to
later work in the field. It is clear that the expression of Eq. (6-3) can
be built up as a sum of contributions from the various atoms. Let us
then compute these contributions, and see how they add to give the
whole Fourier component.
First we start with a single atom, which may as well be at the origin.
Let the charge density be p(r), where r is the distance from the origin.
If we are dealing with wave mechanics, of course, this will be the sum
of the quantities if; *if; for the various electrons, on a one-electron model,
or a corresponding quantity in the many-electron case. We now wish
to multiply this by the plane wave exp iK · r, and integrate over the
volume.
To do this, we can most conveniently use the standard expansion of
the plane wave in terms of spherical harmonics of the angle, and spherical
Bessel functions of r, namely,
- 4 r 00 sin (IK/r)p(r) 2 d
(6-6)
- 1r Jo /K/r r r
When we combine Eqs. (6-7) and (6-8), we see that the atomic scatter-
ing factor f, for a fixed wavelength X of x-rays, is a function of the scatter-
ing angle 0. For 8 = 0, the plane wave exp iK • r reduces to unity, so
that/ reduces to the integral of p(r) over the atom. If we use units such
that p represents the number of electrons per unit volume, we then see
that as 8 approaches zero, f approaches the total number of electrons in
the atom. The quantity f decreases with increasing 8, decreasing more
rapidly the more widely distributed the atom is in space. If the elec-
tronic charge were a point charge, concentrated at the nucleus, f would
be independent of 8, for then we should find in Eq. (6-7) that the con-
tributions to the integrand came only from r very close to zero, where
sin (IKlr)/(IKlr) equals unity independent of IKI, or independent of 8.
In Eq. (6-7) we have f given as a continuous function of 8; but of course
in actual problems of diffraction we use the function only for those discrete
!Ki's representing the various vectors of the reciprocal lattice.
Next let us assume that the unit cell of the crystal contains a number
of atoms, one with atomic scattering factor f; being located at the vector
position r; within the unit cell. Then to get the quantity given in Eq.
(6-3), we must next sum over the atoms in the unit cell. The contribu-
tion of an atom at the position r; to the integral of Eq. (6-3) will be
exp iK • r; times what it would have been if located at the origin, since
its phase contains this factor. Hence the contribution to the integral
of Eq. (6-3) from the atoms in unit cell is
This quantity Fis called the structure factor, and like the atomic scatter-
ing factor, it is a function of 8 and of the wavelength X.
We next wish to sum over all the unit cells in the crystal. If the vector
from the origin to another unit cell is R;, where as usual in treating
crystals we have R; = n; 1t 1 + n; 2t 2 + n; 3t 3 , the n's being integers and
the t's the fundamental lattice translations, we then find that the contri-
bution to the scattering from the contents of the ith unit cell is exp iK · R;
times that of the unit cell at the origin. Since K • R; = 2'11" times an
integer, this means that each unit cell will contribute the same amount,
when we are considering the scattering precisely at a Bragg peak. If
we were taking a slightly different direction, this would not. be the case,
and we should be led by considering such a case to the effect of the finite
crystal on the scattering, which we shall take up in Sec. 6-6.
We have now seen how to set up the integral of Eq. (6-3) in terms of
138 INSULATORS, SEMICONDUCTORS, AND METALS [Chap. 6
the structure factor and the atomic scattering factor. As we have men-
tioned earlier, by working backward from the observed intensities in the
various Bragg peaks, we can find these Fourier components, synthesize
them, and experimentally find the charge density at any point of the
crystal. One of the first experiments of this type was that of Havighurst1
on the alkali halides in 1925. From his data he was able to get spherical
charge distributions for alkali and halogen ions. We note that this date,
1925, was before wave mechanics, so that there were no theoretical calcu-
lations with which to compare these experimental results. After 1928,
however, when we had Hartre.e's self-consistent field calculations, it was
possible to compare such measurements with the theory, and James and
Brindley 2 in 1931 made calculations of atomic scattering factors from
Hartree's wave functions, completing a study which included also papers
by James and· Firth, and James, Waller, and Hartree, 3 on various aspects
of x-ray scattering, including the effect of thermal motion. Hartree 4 even
before wave mechanics had been interested in such problems, and the net
result of these studies was that the wave-mechanical charge distribution
agreed well with experiment. In the modern x-ray literature one meets
many comparisons between observed atomic scattering factors and those
computed from recent calculated atomic wave functions. In the Bibli-
ography at the end of this volume, one will find papers dealing with this
topic by the following authors:
J. Berghuis (1955), D. Coster (1932-1933), J. T. DeMarco (1965), A. J.
Freeman (1959-1961), R. Gaspar (1953), R. Glocker (1932), R. P. Hurst
(1959), :... D. Jennings (1964), M. Kuriyama (1963), A. T. Nelms (1955),
H. Vierwoll (1949).
6-,3. The Dynamical Theory of X-ray Diffraction. The very elemen-
tary theory as we have sketched it has many serious shortcomings, one
of which was pointed out by Darwin 6 in one of the earliest ambitious
attempts to discuss x-ray diffraction rigorously. We have pointed out
that if we set things up as we have done, each unit cell of the crystal will
contribute equally to the scattered beam. This is clearly impossible: if
we made the crystal large enough, the scattered intensity would increase
without limit, becoming greater than the incident intensity. Obviously
something is omitted in the treatment.
Darwin showed what this was, by treating the scattering by separate
1 R. J. Havighurst, Proc. Natl. Acad. Sci. U. S., 11 :502, 507 (1925).
2 R. W. James and G. W. Brindley, Phil. Mag., 12 :81 (1931); Z. Krist., 79 :470
(1931).
3 R. W. James and E. M. Firth, Proc. Roy. Soc. (London), A117:62 (1927). R. W.
James, I. Waller, and D.R. Hartree, Proc. Roy. Soc. (London), A118:334 (1928).
•D.R. Hartree, Phil. Mag., 46:1091 (1923); 50:289 {1925).
5 C. G. Darwin, Phil. Mag., 27 :315, 675 (1914).
Sec. 6-3] THE THEORY OF X-RAY DIFFRACTION 139
under these circumstances, but we must also have another wave, corre-
sponding to the Bragg-scattered wave, also of large amplitude. Thus
we have the ingredients for a theory of x-ray scattering. Ewald in his
1916 papers, referred to in Sec. 6-1, worked out a theory of x-ray scatter-
ing based on this method, and referred to it as a dynamical theory of
x-ray scattering.
This theory as it stands has a serious shortcoming. There is nothing
in Eq. (4-37) suggesting the atomic scattering factor, or the structure
factor, which we expect from the preceding section to be of fundamental
importance in the theory of x-ray scattering. The reason is the assump-
tion which Ewald made, that the scattering material consists of a set
of point dipoles, located at the lattice points of a Bravais lattice. In
such a case, as we pointed out earlier, the atomic scattering factor would
be independent of 0, or of whichever reflection we were dealing with,
which explains why it does not appear in Ewald's formulation. It would
not be very hard to modify Ewald's treatment to bring in a continuous
distribution of scattering material, but if we do this, we come very close
to certain other treatments of the dynamical theory which were suggested
later, and which we shall discuss shortly.
We should not criticize Ewald for this point in his theory. We recall
that it was originally set up to discuss optical refraction, and in this case
it is a matter of no concern whether the dipoles are located at the nucleus,
or are distributed through a finite volume. The application of the
method to x-rays was something of an afterthought, carried out in the
very early <lays of x-ray work, before the relations between the Fourier
components of the charge density and the amplitudes of the various
scattered waves were well understood.
There have been many treatments of the dynamical theory of x-rays,
but the one which we shall discuss is due to von Laue,1 in 1931. It was
inspired by Ewald's treatment, and like his it expands the field in a set
of plane waves, as in Eq. (4-30). As in Ewald's treatment., too, it applies
Maxwell's equations to the field so set up, and demands that the field
arise properly from the charge or current density. He assumed the
polarization to be given by a relation like Eq. (6-2), or the more general
formula which holds at a frequency for which we cannot disregard the
natural frequencies of oscillation of the atoms; fundame:µtally the only
assumption he had to make about the polarization was that it was pro-
portional to the field. But in contrast to Ewald he assumed that the
quantity N, the number of electrons per unit volume, was a continuous,
periodi<.: furn:tiou of po,;ition, as we have been discussing in the preceding
sections. We see, then, that this treatment of von Laue is a natural
extension of that of Ewald, and involves no new principles. There is
1 M. von Laue, Ergeb. Exakt. Naturw., 10 :133 (1931).
Sec. 6-3] THE THEORY OF X-RAY DIFFRACTION 141
one minor matter of technique in which it differs: von Laue sets up the
equation for the electric displacement D, rather than for the Hertz vector
Z. The Hertz vector is a great convenience when we are treating the
field of isolated dipoles all of which are oscillating in the same direction,
but we do not have this in all cases in the x-ray problem, and it loses
most of its value. The advantage of using D is that it leads at once to
the electric field E, which in turn gives the polarization by Eq. (6-2).
Before we go into Laue's treatment, we shall stop and consider the
problem in a more general light. The dielectric constant, and refractive
index, are derived from Eq. (6-2): since N, the number of electrons per
unit volume, is assumed to be a periodic function of position in the
crystal, we have an index of refraction which is a periodic function of
position. But this is essentially what is going on when we have Schrod-
inger's equation for the motion of an electron in a periodic potential. We
recaH that the elementary derivation of Schrodinger's equation considers
the way in which the wavelength of the de Broglie wave varies from point
to point, for a wave of constant frequency (that is, energy). In a periodic
potential, the wavelength varies periodically with position. This is what
von Laue assumed for his x-ray diffraction problem.
We are thus approaching the x-ray problem with a knowledge of the
corresponding problem in the solution of Schrodinger's equation, which
we have gained in our study of energy bands in Volume 2. Few of the
physicists treating the dynamical theory of x-ray scattering, until very
recently, have had this background. 1 Consequently the two theories
have developed rather independently of each other. There are, however,
a good many ways in which we can simplify the dynamical theory by
taking advantage of what we know about the energy-band problem.
First let us discuss some of the differences between the two cases, for
guidance in looking for practical methods of solution.
The striking difference is that the variations of wavelength with posi-
tion for the x-ray case are enormously smaller than for the electrons.
The index of refraction for x-rays differs from unity by only the order
of magnitude of 1 part in 10•. It is only this very small quantity which
is varying periodically with position. Thus the x-ray case is like the
extreme free-electron limit for the electronic problem. Therefore, unlike
the electron case, we may expect a plane-wave expansion to give rapidly
convergent values, and to be entirely suitable for practical purposes.
Thus von Laue's scheme, which we shall shortly present, and which is a
plane-wave expansion, gives very satisfactory results. We shall see that
1 The present author has emphasized the similarity, in a recent review article, Rev.
Mod. Phys., 30:197 (1958). Other recent treatments are by R. W. James, Solid
State Phys., 16 :53 (1963), and B. W. Batterman and H. Cole, Rev. Mod. Phys., 36 :681
(1964). The latter authors discuss the similarity to the Schrodinger problem.
142 INSULATORS, SEMICONDUCTORS, AND METALS [Chap. 6
the resulting equations are very similar to those of the plane-wave expan-
sion method for solving Schrodinger's equation in a periodic potential.
Along with this fact, the whole mechanism of Brillouin zones, energy
bands, energy gaps, and so on, can be used in the x-ray case just as for
energy-band theory.
We should have an exact parallelism between the two problems if it
were not that the electric field is a vector quantity, and we have Maxwell's
equations to solve, rather than having the scalar wave equation of wave
mechanics. This results in slight complications in the electrical problem,
related to the direction of the plane of polarization of the. transverse
electromagnetic waves. This does not make any great difference, how-
ever, and there are special cases iii which the relation of the two problems
is extremely close.
6-4. Laue's Treatment of the Dynamical Theory. Laue's treatment
starts by expanding the electric displacement D in series like that of
Eq. (4-30). We shall not specifically write the wave vector k as having
real and imaginary parts, though we are at liberty to do so. We have
D = 2:(K)D(K) exp i[wt - (k + K) • r] (6-10)
The equation div D = 0 leads to
2:(K)[(k + K) · D(K)] exp i[wt - (k + K) · r] = 0 (6-11)
Since this equation must hold for all points of space and all times, the
coefficient of each term must be zero. That is, we have
(k + K) • D (K) = 0 (6-12)
which shows that the vector D(K) corresponding to any one of the Fourier
components exp i[wt - (k + K) • r] must be transverse to the wave
vector k + K of this wave. The reason von Laue chose to work with
the expansion of D rather than of E is that E does not have this property
of being transverse.
We must next have the expansion of E, and since this is equal to
D / EoKe, where Ke is the dielectric constant, a periodic function of position,
we need to expand 1/K. in a series of terms like exp -iK • r. We shall
assume that
.!. =
Ke
\' (K)w(K) exp -iX • r
f_;
(6-13)
Ke = 1 - -e-2
mtow
2 l F(K)
(K) - . •r
- exp -iK
Q
(6-15)
where F is the structure factor, given in Eq. (6-9), and Q is the volume
of the unit cell. To verify this equation we need only multiply by
exp iK • r and integrate over the unit cell. The dielectric constant is
so very close to unity that we have to a very good approximation
e l
-1 = 1 + -- F(K) . •r
2
(K) - - exp -iK (6-16)
Ke mtoW 2 Q
have
eoE = _!__
Ke
D = ~
L
(K,K')D(K - K')w(K') exp i[wt - (k + K) · r] (6-18)
We now substitute for D from Eq. (6-10), and for E from Eq. (6-18).
When we perform the required operations, we find
- _!__
co
2:(K,K') ( (k + K)[(k + K) · D(K - K')]
- (k + K)2D(K - K') }w(K') exp i[wt - (k + K) · r]
= exp i[wt - (k
µ 0w 2 2:(K)D(K) K) • r] + (6-20)
As before, these two expressions cannot be equal for all points of space
and all values of time unless the coefficients of each Fourier component
are equal. Hence we have
toµow 2D(K) = 2:(K') {(k + K)2D(K - K')
- (k + K)[(k + K) · D(K - K')]}w(K') (6-21)
144 INSULATORS, SEMICONDUCTORS, AND METALS [Chop. 6
We treat the term for K' = 0 separately, and can transform the result
into the form "'
+ K) 2
[ (k (Ke)av - w2
C
2
] D(K) + \'
L
(K' ~ O)w(K')(k + K) 2 {n(K - K')
This is essentially the result of von Laue, though we have made small
differences in our derivation compared with his tre.atment. In the last
step we have used the result Eoµo = 1/c 2, where c is the velocity of light
in free space.
In Eq. (6-22) we recognize the standard form of a characteristic value
problem, such as we meet when we solve Schrodinger's equation by
expanding the wave function in a set of basis functions. The quantities
D(K) are coefficients of the plane waves acting as basis functions, as we
see from Eq. (6-10). The quantity (k + K) 2/(Ke)av plays the part of the
diagonal matrix component of the energy, w 2/c 2 plays the part of the
energy E, and w(K')(k +
K) 2 plays the part of the nondiagonal matrix
component of the energy between states K and K - K'. The only com-
plication arises from the presence of the quantity
instead of merely D(K - K'). As von Laue points out, the second term
of Eq. (6-23) is the component of D(K - K') along the direction of the
wave vector k +
K, so that the whole expression of Eq. (6-23) is the
component of D (K - K') perpendicular to k K. For K' = 0, the +
second term is zero, on account of Eq. (6-12), but in other cases it is not.
In other words, it is these components of the D's perpendicular to the
vectors k + K which play the part of the coefficients to be determined
by Eq. (6-22).
We may then solve these equations as in a quantum-mechanical per-
turbation problem. For a given value of k, we shall find a secular
equation, formed by setting the determinant of the coefficients equal to
zero, which will determine w 2• At the time when Ewald, Laue, and the
others were writing their papers, means for solving such secular equations
were not available, and they proceeded entirely in terms of simple special
cases. Now, however, with the availability of digital computers, it
would not be hard to get a solution of entirely adequate accuracy by using
a finite number of terms. The reason why the accuracy would be adeqnate
lies in the rapid convergence of the series of Eq. (6-10), resulting from the
very small values of the quantities w(K') for K' ~ 0.
All the techniques, then, which have been described at length in
Sec. 6-5] THE THEORY OF X-RAY. DIFFRACTION 145
Volume 2, Chaps. 6 and 7, can be used for the solution of Eq. (6-22), only
here, in contrast to the electronic case, these methods will give usable
results. We start with the diagonal energy, disregarding the nondiagonal
components in Eq. (6-22). We then find
w2 (k + K) 2 (6-24)
C2 = (Ke)~v
which simply states that the frequency and wavelength are related as in a
plane wave in a medium with the constant dielectric constant (K,)av• If
we consider w 2 as a function of k, we shall have such an expression as that
of Eq. (6-24) for each value of K. At points of the reciprocal lattice
where two or more such functions have identical values, the nondiagonal
matrix elements in Eq. (6-22) will have the effect of splitting the two or
more w values apart from each other. Thus we shall have gaps in the
spectrum of was a function of k, just as we have energy gaps between the
energy bands in the Schrodinger problem for a periodic potential. These
energy gaps represent ranges of w within which propagation is impossible
in the crystal; we can have only a damped wave. It is these waves which
are connected with the Bragg reflection. We shall now show in the
next section that these ideas can be used to discuss the reflection very
completely.
6-5. X-ray Diffraction by a Sinusoidally Varying Index of Refraction.
In Eq. (6-22) we shall start with the equation for K = 0, and shall
assume that k is the wave vector in the extended zone scheme, so that
k 2/(Ke)av is very nearly equal to w 2 /c 2 • Then the equation will be satisfied
if D(O) is large, and in general the other D's will be small. However, if
there is some value K' such that (k + K') 2 is very nearly equal to k 2, or
such that Bragg's relation is satisfied, we can have a large coefficient
D(K') for this component as well. The nondiagonal matrix component
of the perturbation between these states will be w(K')(k + K')2. As far
as this reflection is concerned, this one component [and the related value
involving w(-K')] are the only components of any importance. We can
treat this particular reflection with very good accuracy if we disregard all
other w's, assuming that only w( ± K') is different from zero. In this
case we have a sinusoidal variation of the index of refraction, rather than
the superposition which is found in the real crystal. It is easy to get an
exact solution for this case of the sinusoidal index of refraction, following
methods described in Volume 2, Sec. 6-6, and since only this component is
of any importance for the particular Bragg reflection under consideration,
this gives us essentially all we need to know from the dynamical theory.
Let us then modify Eq. (6-22) by omitting all terms in the summation
over K', except terms for a particular K' and its negative. Then the only
coefficients D which will be involved are D(nK'), where n is an integer;
]
j,,
,I
146 INSULATORS, SEMICONDUCTORS, AND METALS [Chap. 6
[ (k + nK')
(Ke)av
2
- w:] D(nK') + w(k + nK
C
1) 2 (D[(n - l)K'J
This equation has the same character as that described in Volume 2, Sec.
6-6, for the corresponding Schrodinger problem. There in Eq. (6-37) we
had the following situation:
[(p + h) 2 - E(p)]v(p + h)
- W[v(p +h - I) + v(p + h + I)] =0 (6-26)
In this case p was the momentum, equivalent to our k, and h was eq_uiva-
lent to our nK'; E was equivalent to our w 2/ c2, and - W to our w(k + nK') 2 •
The v's were equivalent to our D's. The essential point of similarity is
that the equation connects three D's (or in the earlier case, three v's)
whose indices were n, n - I, and n + I. We pointed out there that this
forms a recursion formula for the D's, or v's: if we know two successive
entries in a table of D's as a function of n, we can find the next entry, and
so on. By extending to infinite n, we ordinarily find that the D's increase
without limit; but by choosing the first two entries properly the D's will
decrease to zero instead for large n. We can do this in both the limit of
large positive and large negative n only for properly chosen values of
w 2/c 2 • This is the way, then, in which we find the frequency was a func-
tion of k.
The thing we found in Volume 2 was that for a small departure from
the plane-wave case (that is, in the present case, for small w, which we
have) there will be not more than two of the D's which are appreciably
different from zero, namely, the amplitudes of the incident, and a single
reflected wave. Since we are choosing k to be the extended wave vector,
one of these large D's is then D(O), and the other will be either D(K') or
D(-K'), depending on what value for k we are assuming. If we are
assuming that (k + K') 2 is approximately equal to k 2 , the second large D
will be D(K'). We then have the case shown in Fig. 6-1, where now the
vector denoted as Kin that figure is called K'.
\Ve now have one complication not present in the Schrodinger case,
namely, that arising from the polarization of the wave. We have two
cases: either the vector Dis perpendicular to the plane of the paper, or it is
in the plane of the paper. In the former case the quantities (k +
Sec. 6-5] THE THEORY Of.X:"'.RAY DIFFRACTION 147
K') • D(nK'), etc., will be zero; in the latter case they will not. Let us
first take the case where D is perpendicular to the plane of the paper,
since it is simpler; later we shall indicate how the situation changes for
the other case. In this case, Eq. (6-25) reduces to the following two
equations:
[ - k2
(Ko)av
"'2] D(O) + wk D(K') = 0
- 2
C
2
(6-27)
w(k + K') D(O) + [ (k (,ce)av
2 + K') 2
-
2
"'2 ]
C
D(K') = O
These are two simultaneous homogeneous linear equations for the two
unknowns D(O) and D(K'), and as usual they will have no solutions unless
the determinant of coefficients vanishes.
Our secular equation is then
[~
(Ko)av
- "':] [(k
C («.)av
+
K') 2 - "':] -
C
w 2k 2 (k + K') 2 = O (6-28)
FIG. 6-2. Angular frequency was function of kn, component of wave vector normal to
scattering plane of atoms, to illustrate dynamical theory of x-ray scattering, as in
Eqs. (6-28) and (6-29). The gaps are greatly exaggerated in the figure; actually
they are too narrow to be observable.
k; + k: w2
and
(kn + K') 2 + k: w2
(6-29)
(Ke)av = C2 (Ke)av = c2
will indicate the same value of w. The two curves for w as a function of
k,., given by Eq. (6-29), are hyperbolas, and they, together with the other
hyperbolas given by different values of the integer n in Eq. (6-25), are
shown in Fig. 6-2. At every intersection of the lowest part of one
148 INSULATORS, SEMICONDUCTORS, AND METALS [Chap. 6
hyperbola with the adjacent one, the two curves will be pushed apart, as
is shown in the figure.
As we see in Fig. 6-2, we have a situation like that of energy bands.
The interaction between the various functions has produced narrow gaps
at kn = ± K' /2, ± 3K' /2, . . . corresponding to frequencies for which
no undamped wave can exist in the crystal. We shall see the significance
of this situation in a moment. If we try to solve Eq. (6-28) under these
circumstances, we find that it has solutions, but only for a complex value
of k,., corresponding to a wave which is damped as we go into the crystal.
It is interesting to find the width of the gap. This can be found from
Eq. (6-28) by setting kn = -K' /2. We have
[ (K' /2)
()
2
Ke
+ k:
av
_ w2 ]
C
2
2
= w2 [(K')
2
2
+k,
2] 2
w2 (K'/2) 2 + kl (l + ) (6-30)
c2 = (Ke)av - W
~ = (K'/2) 2 + kl (l ± ½w)
C (Ke)av
If we leave out the small quantity w, Eq. (6-30) gives the frequency at
which we find Bragg reflection, according to the elementary theory.
Since w is very small, of the order of magnitude of 10-5 , we see that it
is only very close to this frequency that we have the damped wave of
which we have just spoken. The reader should note that in Eq. (6-30)
we have disregarded the difference between w, and w/(Ko)av, since this
difference is a small quantity of the order of 10-10•
Let us solve Eq. (6-28) in general, in such a way as to exhibit the
damped waves of which we have just spoken. We shall let
K'
k n = --+.!ik
2 n
(6-31)
w (K'/2) + kr
---.c.....,-c--,---~+.!i
2
_ (w- - (wt)
2
- +.!i (w- 2
) _
2
)
c2 (Ke) av c2 c2 C2
where .!ik,., .!i(w 2/c 2) represent the deviations of the wave vector and of
w 2 /c 2 from the Bragg values. We now substitute these values in Eq.
(6-28); we find that all large quantities cancel out, and the small quanti-
ties work out as follows:
IK'I
- - = -WB sin
•
(}B (6-33)
2 C
where (}B is the Bragg angle for the assumed frequency, and where we
have neglected the small effect of the index of refraction (K .)av on Bragg's
law. Then we find
(6-34)
Akn = +i WB I_'.!!!
___ (6-35)
- c sm (}B 2
ties which represent the component of the vector D[(n -::- l)K'], etc., [
along the direction perpendicular to the wave vector k + nK'. For the
special case treated in Eq. (6-27), where we have only two waves which ··.ll
,..·
are of significance, we see from Fig. 6-1 that the angle between one of
the quantities D(O) or D(K') and the wave vector of the other wave is 20.
Hence in Eq. (6-27) we need only multiply the terms wk 2D(K') and .,f
w(k + K')2D(O) by the factor cos 20 to get the case of the other polariza- I
I
tion. We can carry this correction through the rest of our discussion I
by merely replacing w by w cos 2/J wherever it appears. This makes a l'
quantitative difference for the two polarizations, but the qualitative
situation is the same in either case.
6-6. X-ray Scattering by Actual Crystals. We have presented the
dynamical theory largely to indicate its similarity to the theory of the
Sec. 6-6] THE THEORY OF X-RAY DIFFRACTION 151
This is found from the term in Ee in Eq. (4-26), using the leading term
at long distances, that in 1/kr, setting sin O = I, which is the appropriate
value for this case, and noticing that Ee is in the direction opposite to
the dipole's polarization.
Next let us sum terms like that of Eq. (6-37) over first a single atom,
and next over the atoms in a unit cell. If the element of volume is not
precisely at· the origin, but instead is at a position r, as in Fig. fi-1, we
see as in the derivation of Eq. (6-3) that the effect of the different path
length of the incident and scattered waves is to be taken into account
1 W. L. Bragg, R. W. James, and C. H. Bosanquet, Phil. Mag., 41 :309 (1921).
152 INSULATORS, SEMICONDUCTORS, AND METALS [Chap. 6
yx + (R cos 8 -
2 y) 2 + (R sin 8) 2 + y cos 8 - R (6-40)
Hence to get the complete scattered electric field at the point P, we must
sum the quantity
-
Fe 2 /mc 2 exp i(wt - kR)
41rEo R exp
[
-i
.( k ) (
2R x
2 +y 2 • 2 ] E
sm 8 (6-42) l'
'
if we disregard the higher terms in Eq. (6-41).
lI
Let us assume that there are N unit cells per unit volume in the crystal, l
and that the lattice spacing along the direction of K is d. Then the
number of unit cells per unit area in the plane is Nd. If these unit cells
are so closely distributed that the exponential factor hardly varies from
one to the next, a condition which can be shown to hold, we can replace
the summation over unit cells by an integration over dx dy. We have for
Sec. 6-6] THE THEORY Of .X~RAY DIFFRACTION 153
-Nd Fe 21rEo
/mc 2 exp i(wtR - kR) E
4
Jexp [-. (~) ( + y sm o)] dx dy
2R xi
2 2 • 2
(6-43)
v = ~
2R
(x 2 + y 2 sin 2 0) (6-44)
We must then find the element of area, dx dy, or rather the integral of
this over the area between ellipses corresponding to v and v + dv. The
equation
x2 y2
(6-45)
2Rv/k + (2Rv/k)/sin 2 O = 1
which is equivalent to Eq. (6-44) is the equation of an ellipse whose semi-
axes are V2Rv/k and y (2Rv/k)/sin 2 O. Thus the area of this ellipse,
which is 1r times the product of semiaxes, is
21rRv
Area= k----;--O (6-46)
sin
loo.. e-•v-.-dv
. 21rR
k sm 0
(6-48)
154 INSULATORS, SEMICONDUCTORS, AND METALS [Chap. 6
The integration of Eq. (6-48) does not lead to a definite answer, since
the integral of e-iv, namely e-i•/(-i), oscillates at its upper limit of
infinity. The standard method of handling this is to introduce a slight
damping term into the integration, corresponding to a slowly decreasing
contribution of successive Fresnel zones. We shall shortly see that there
is a sound physical reason for this procedure. In other words, we replace
the integral
lo., e-iv dv
by the value
lim ("' e-Ci+a)v dv = lim e-~i+a)v I'° = -i (6-49)
a->O Jo ,,_, 0 - (i + a) o
where the contribution from infinite v's is zero for any nonvanishing value
of a, no matter how small. The justification for this procedure is the
following: Let us assume that we are really dealing, not with an infinite
sheet of unit cells, but with a finite sheet, of an irregular shape. Then
larger and larger Fresnel zones will partly cut outside the sheet of atoms,
so that there will be a factor in the integrand representing the fraction of
the zone which is inside the sheet. This factor behaves qualitatively like
the exponential e-av which we have introduced, and produces convergence
in the same way. It is easily shown that the final result will be the same,
no matter what precisely is the law of falling off of this factor, provided
only it varies slowly enough with v. These matters are discussed more in
detail in the reference made earlier to "Electromagnetism," or in any
text on optics.
We now insert this result into Eq. (6-43), and find for the scattered
amplitude at the point P the quantity
Nd Fe 2 /mc 2 exp i(wt - kR) E 27r_iR = i NdAFe~/mc 2 E exp i(wt _ kR)
41rto R k sm fJ 41rto sm fJ
(6-50)
where A is the wavelength, 21r/k. This is the result found by Darwin in
the paper cited earlier.
The next step is to sum over a finite number of parallel planes of unit
cells. This number is assumed to be large, but not large enough so that
the attenuation arising from primary extinction must be considered. If
the angle of incidence is precisely fJ, each plane will scatter exactly in
phase, and the resulting amplitude will be just the value given in Eq.
(6-50), multiplied by the number of planes. This is the time, however,
to consider the fact, which we have omitted from our discussion so far,
that if we have 011ly a finite thickness of crystal, there will be a broadening
of the scattered beam, so that instead of having the scattering only at
precisely the Bragg angle, there will be scattered radiation when fJ differs
Sec. 6-6] THE THEORY OF X-RAY DIFFRACTION 155
slightly from this value. We shall, in fact, following Bragg, James, and
Bosanquet, let the angle (J equal the Bragg angle (JB plus a small correction
angle e. By the familiar argument used in proving Bragg's law, the
phase difference between the radiation scattered from successive planes
will now be
41rd . (
sin (J)
21r ( 2d ->..- = Tsm eB+e) = 41rd
T (smfJscose+cos(Jssme)
. . (6-51)
which shows that the larger p is, the narrower is the peak. This type of
broadening of the Bragg reflection is found in fact when one is dealing
with very small crystals. It is a much greater broadening that would be
produced by the primary extinction effect resulting from the dynamical
theory, and in practice it completely obscures that effect.
156 INSULATORS, SEMICONDUCTORS, AND METALS [Chap. 6
f
-
00
00
sin 2 [p(27rd/t-) cos 0sE] d
[(27rd/t-) cos 0sE]2
p
E = (27rd/t-) cos 0B -
f 00
00
sin 2 x d
~ x
7rp
(6-58)
Hence we find
Integrated reflected intensity
( Ndt-jFje2/mc2)2 7rp
Incident intensity 47rEo sin 0s (27rd/t-) cos 0B (6-59 )
In Eq. (6-60) we have the result of Bragg, James, and Bosanquet for the
total integrated reflected radiation, provided the electric vector is per-
pendicular to the plane of the incident and reflected rays. If the electric
Sec. 6-6) THE THEORY OF X-RAY DIFFRACTION 157
vector is in the plane of the incident and reflected rays, it is easy to show
as in Sec. 6-5 that there is an additional factor cos 28B in the amplitude,
and cos 2 28B in the intensity. If the incident radiation is unpolarized, the
corresponding factor is
1 + cos 2 28B
(6-61)
2
scattering, which results from the scattering of the radiation with a recoil
of an electron, which absorbs some of the energy of the incident photon,
leading to scattering with a somewhat longer wavelength. This scatter-
ing must be corrected for, in interpreting the experiments. Furthermore,
as we have mentioned in Sec. 1-5, it can give us interesting information
about the atomic properties, though we shall not take this up in the
present volume.
All these points are mentioned here, so that the reader will not feel
that the very abbreviated discussion of the present chapter has given
him a complete understanding of x-ray diffraction. It is not the purpose
of the present volume to give such an understanding. We are presenting
the ideas here because they tie in very closely, not only with the
Drude-Lorentz theory which we have discussed in the two preceding
chapters, but also with many points which we shall come to in later
chapters. And the reader will realize that practically all the theory
which we have presented i.p. the present chapter was worked out before
the development of wave mechanics, so that it represents, along with
the Drude-Lorentz theory, part of the stock in trade of the theoretical
physicist at the time when wave mechanics came along.
The next topic which we shall take up is the elastic vibrations of a
crystal lattice, vibrations which are observed as thermal oscillations, but
which ahm have very important connections with many other properties
of solids: optical properties, scattering of electrons, scattering of x-rays
and neutrons, and so on. This theory again was developed in the early
part of the present century, and was already worked out quite thoroughly
before wave mechanics was developed.
7
Effect of Thermal Vibrations of Crystals
on X-ray Scattering
159
160 INSULATORS, SEMICONDUCTORS, AND METALS [Chap. 7
of view. In the first place, if we let the wavelength decrease far enough,
we should reach the point where a half wavelength equaled the distance
between adjacent atoms. At this point, in the oscillatory mode, suc-
cessive atoms would be oscillating in opposite phase. This is as far as
we can go: there is no meaning to a shorter wave than this, when we
recall the atomic nature of the medium, and the fact that it is only the
displacements of the individual atoms that have any meaning in describ-
ing the oscillations. The total number of modes must be limited, none
existing with a shorter wavelength, or higher frequency, than the limiting
value corresponding in a general way to a half wavelength equal to the
interatomic distance.
The other point of view treats the solid as a dynamical system, with
forces acting on the various atoms proportional to their displacements
from positions of equilibrium, so that they can execute simple harmonic
motion. The theory of mechanics tells us that in such a case we can
introduce normal coordinates, linear combinations of the displacements
of the various atoms, such that the equation of motion for each normal
coordinate has the same form as the equation of motion of a linear oscilla-
tor. It is for this reason that the problem is like a collection of linear
oscillators. The theory further tells us that the number of normal coordi-
nates which can be introduced is precisely equal to the number of degrees
of freedom in the system. By this we mean the number of coordinates
necessary to describe the location of all atoms. Since it takes three
coordinates to determine the position of a particle, there must be 3N
degrees of freedom per unit volume, if N is the number of atoms per unit
volume. Hence there must also be 3N normal coordinates per unit
volume, so that the number is limited, making it very natural that there
should be a maximum frequency, or minimum wavelength, for the normal
coordinates. Thus we are led to the same conclusion as in the preceding
paragraph. Closer examination, such as Born and von Karman gave
to the problem, showed that the two points of view are entirely in agree-
ment with each other.
The theory of Born and von Karman carried through a detailed study
of these 3N normal coordinates. Debye, on the other hand, made an
approximation for the distribution in frequency of the frequencies of the
oscillators, based on ordinary acoustic theory, and taking account of the
atomic nature of the sample only in that he limited the number of normal
modes to 3N per unit volume.
We have noted that these theories of crystal oscillations appeared in
1912, simultaueoudy with Hw discovery of x-ray diffraction. There was
a very rapid development of theory indicating the way in which these
lattice vibrations would affect x-ray scattering, so that in turn experi-
mental evidence of the vibrations could be found from x-ray measurement.
162 INSULATORS, SEMICONDUCTORS, AND METALS [Chap. 7
We shall try to satisfy these equations by assuming that the solution con-
sists of an elastic wave, in which the displacements are given by
Ua(s,i) = Wa(s) exp i(wt - q · R;) (7-4)
where wa(s), w are to be found as functions of a wave vector q. We shall
generally follow custom in using q for the wave vector of elastic waves, to
distinguish it from k, which we use for Schrodinger waves or for waves of
electromagnetic fields. Both are vectors in the same k space, and in some
cases of interaction between elastic and electromagnetic waves it will be
impossible to distinguish between the two types of wave vectors.
If we insert the assumption (7-4) into Eq. (7-3), that equation reduces to
-m,w 2w,.(s) = '1:-(b,t,v)Cab(s,t,R.) exp (-iq · R.)wb(t) (7-5)
where we have replaced Ri - R; by R.. In Eq. (7-5) we have 3g simul-
taneous equations for the 3g displacements of the g atoms in a unit cell.
These are linear homogeneous equations for the constant quantities w (s), 0
are degenerate at q = 0, each having zero frequency. The reason for the
vanishing frequency is that the displacements, in this case, correspond to
the situation where all atoms of the crystal have identical displacements,
along x, y, or z, and obviously this makes no difference in the energy of the
crystal, so that the restoring force, and hence the resonant frequency, is
zero. In a cubic crystal, for propagation along the 100 direction, the
degeneracy will split for q ,e. 0, in such a way that we have one longitudinal
wave, and a doubly degenerate transverse wave, for which the oscillation
could be either along y or along z. In general directions of propagation,
the degeneracy is entirely removed, and the oscillations cannot be
described as either longitudinal or transverse. In addition to the acous-
tical modes, the other 3g-3 modes have frequencies which never go to zero,
but lie in the infrared region of the spectrum, and consequently are called
optical modes.
If we have a finite crystal, then just as in the energy-band case the
waves of Eq. (7-4) must satisfy certain boundary conditions, which we
shall take to be periodic boundary conditions, as a result of which only
discrete values of q lead to allowed vibrations, the normal modes of
vibration. As for energy bands, these q's are uniformly distributed
through the Brillouin zone, and are Nin number, if there are N unit cells
in the repeating range of the crystal. Thus the total number of modes is
3Ng, in agreement with Sec. 7-1 (when we recall that the number of atoms
in the repeating region is now Ng). In the theory of specific heat, each of
these normal modes is treated as an ideal linear oscillator, so that at high
temperatures it has an average energy of kT, where k is Boltzmann's con-
stant, T is the absolute temperature, leading to a heat capacity of 3N gk,
which is the familiar law of Dulong and Petit. At lower temperatures,
we must treat the vibrational energy of each oscillator by the quantum
theory, assuming an energy given by Eq. (7-1) for each oscillator, where
v is its appropriate frequency. We are then led to the sort of treatment
of specific heat given by Born and von Karman.
There has been a good deal of treatment of the vibrations of crystals
in the literature; but most of it is based on very arbitrary assumptions
regarding the coefficients Cab(s,t,R,,), which are really independent micro-
scopic elastic constants, subject only to certain interrelations on account
of crystal symmetry, as we have mentioned earlier. There are an
infinite number of such constants, though there is good reason to think
that they decrease rapidly to zero as the two atoms concerned get farther
and farther apart, so that in practice one need use only a small number
of such ronstant8. The principal way of determining these constants
experimentally is by the use 'of thermal diffuse scattering of x-rays, or
by the inelastic scattering of neutrons, as we shall describe later. The
macroscopic elastic constants can be determined as linear combinations
166 INSULATORS, SEMICONDUCTORS, AND METALS [Chap. 7
of the C's, since in the limit of low frequencies the vibrations approach
ordinary acoustic oscillations, which can be described in terms of classical
elasticity theory. Many workers have tried to work backward, from
the macroscopic elastic constants, to deduce the C's, and hence set up
Eq. (7~5) and determine the vibrational frequencies. This in principle
is impossible, however, for the number of macroscopic elastic constants
is very small, and we have theoretically an infinite number of C's. The
only proper procedure, in the absence of a completely a priori calculation,
seems to be to find the C's, as we have mentioned, by thermal diffuse
scattering of x-rays or by neutron scattering, and then to test these C's
by computing the macroscopic elastic constants from them. In cases
where such tests have been carried out, they have given a satisfactory
check with experiment.
The theory of elastic vibrations as we have presented it assumes only
linear restoring forces between the atoms. Of course, this forms merely
the first term in a power-series expansion of the forces in terms of the
displacements. Once the higher-order terms are included, different elas-
tic modes can no longer propagate independently of each other; there is,
rather, an interaction between different waves. In other words, one
elastic wave can scatter another. When it does so, we come to the p:r:ob-
lem of the Bragg reflection of one elastic wave when it is scattered by
another. In this case, either wave can be considered to be undergoing
Bragg reflection by the other. Such scattering of one thermal wave by
another is operating in the problem of thermal conductivity. Heat flows
through a body in the form of elastic vibrations. These waves are scat-
tered by other thermal waves, so that there is the equivalent of a thermal
resistance. The well-known theory of thermal conductivity of Peierls 1 is
based on an analysis of this scattering. Such problems have not been
by any means completely treated in actual crystals. For a more detailed
treatment of problems in elastic vibrations, the reader is referred to the
book by Ziman, "Electrons and Phonons," which we have cited several
times, as a recent treatment.
We have now presented the theory of the thermal vibrations of crystals
in sufficient detail so that the reader will be able to understand the next
problem which we shall take up, namely, the effect of the lattice vibra-
tions on the scattering of x-rays or of electrons. This involves examining
the way in which the thermal oscillations of a crystal, which introduce
waves of dielectric constant (in the case of x-rays) or of electrostatic
potential (in the case of electrons), are capable of scattering x-ray or
electron wave8 according to the principles of Bragg 8Cattering.
7-3. The Debye-Waller Factor in X-ray Scattering. In Sec. 6-2 we
have seen that to get the Bragg scattering in any direction, we must
1 R. Peierls, Ann. Physik, 3 :1055 (1929).
Sec. 7-3] EFFECT OF THERMAL VIBRATIONS ON X-RAY SCATTERING 167
analyze the charge density of the crystal in plane waves. For an undis-
torted crystal, we have only waves whose wave vectors are the vectors K
of the reciprocal lattice, and the structure factor F given in Eq. (6-9)
gives the amplitude of the plane wave having the wave vector K. We
have seen that a single one of these plane waves produces a scattered
wave of x-rays, satisfying the Bragg law. This law, as we know from
Volume 2, Sec. 7-6, can be stated as follows: When a wave of x-rays, with
initial wave vector k and angular frequency w, is scattered by a plane
wave of charge density with wave vector K, the wave vector of the scat-
tered wave will be k + K, and its angular frequency will equal the initial
angular frequency w. Since the magnitude of the wave vector of the
x-rays must be related to w by the relation w/lkl = c, where c is the
velocity of light, and the scattered wave has the angular frequency w but
the wave vector k + K, it must be that k + K has the same magnitude
ask.
For a crystal in which thermal oscillations are occurring, the atoms
no longer will be in their undistorted positions, and new plane waves
will be introduced into the Fourier analysis of the charge density. We
shall show shortly that the wave vectors of these new plane waves can
have any arbitrary wave vectors, though their amplitudes will be small,
proportional to the amplitudes of the thermal oscillations of the atoms.
Hence Bragg scattering will be introduced in all directions, leading to
what is called the thermal diffuse scattering. Since this diffuse scattering
will rob intensity from the ordinary Bragg-scattered beam, the intensity
of the latter must decrease with increasing temperature, and this decrease
is what is known as the Debye-Waller factor, to which we have referred
in Sec. 7-1. We shall take up this factor in the present section, going
on to the thermal diffuse scattering in the next section.
It is clear that we must modify the analysis of Sec. 6-2 by replacing
the positions of the atoms used in computing the structure factor of
Eq. (6-9) by the modified positions, equal to the undisplaced positions
plus the displacements which we have been taking up in Sec. 7-2. To
describe the displacements arising from thermal oscillations, we need
somewhat more notation than was used in Sec. 7-2. We have mentioned
that for each value of q, the wave vector of the elastic wave, we have 3g
normal modes of oscillation, where g is the number of atoms in the unit
cell. Let these modes be denoted by an index l, which runs from 1 to 3g,
and by the value of q, so that we may write the frequency of the mode
as w(l,q). In writing the displacement of an atom, we shall use a real
function of time, rather than a complex exponential, which would result
in difficulties when we take the square of the displacement. When we
do this, we note that the quantities w (s), in Eq. (7-4), the amplitude
0
functions for the ath component of the sth atom, will in general be com-
168 INSULATORS, SEMICONDUCTORS, AND METALS [Chap. 7
plex quantities, for different atoms in the unit cell will vibrate not only
with different amplitude, but with different phase as well. If we write
wa(s) as Wa(s) exp -ia(s), where Wa(s) is real, and a is a phase constant,
the real part of Eq. (7-4) can be written in the form Wa(s) cos [wt - q · R;
- a(s)]. We must really have indices l, q attached to the quantities
Wa(s) and a(s), as well as tow. Furthermore, it is convenient to nor-
malize the Wa's, and to have a separate amplitude for each plane wave.
Thus we shall write
u(s,i) = ~(l,q)A(l,q)W(s,l,q) cos [w(l,q)t - q · R; - a(s,l,q)) (7-6)
This equation gives the vector displacement u(s,i) of the sth atom in
the ith unit cell. The summation over l and q is over the normal modes
of vibration. The amplitude A(l,q) is arbitrary, but its mean square
value will later be determined by thermodynamics, assuming that it
corresponds to thermal oscillation. The quantity W(s,l,q) will be
assumed to be normalized according to the rule
~(s,i)m.lW(s,l,q)l 2 = 1 (7-7)
where the summation is over all atoms of the crystal, m, is the mass of
the sth atom in the unit cell, and IW(s,l,q)j 2 is the square of the magnitude
of the vector. The phase a(s,l,q) is not determined by the normalization;
the relative phases of vibration of the various atoms are uniquely fixed
by the solution of the equations of motion, Eq. (7-5), but we may assume
an arbitrary additional phase associated with each normal mode.
Our problem is now to calculate the summation
~(s,i)f. exp ik1 • [r. + R; + u(s,i)] (7-8)
where as before r. + Ri is the undisplaced position of the sth atom in the
unit cell distant from the origin by the amount R;, and where u(s,i) is
the displacement of this atom from its equilibrium position on account
of the lattice oscillation. Following the discussion of Sec. 6-2, this sum-
mation of Eq. (7-8) would be zero for any value of k 1 except one of the
vectors K of the reciprocal lattice, provided the displacements u(s,i) were
all zero, while if k 1 were one of the K's, the summation would be N times
the structure factor, where N is the number of unit cells in the repeating
volume of the crystal. However, in the presence of oscillations, as we
have mentioned earlier, we shall find nonvanishing values of the summa-
tion of Eq. (7-8) for any value of k 1 . We shall continue to assume
periodic boundary conditions, so that we need only consider k 1's leading
to waves which repeat in each periodic region of space.
The expression of Eq. (7,-8) can now be written in the form
~(s,i)f. exp ik1 • (r. + R.)II(l,q) exp ik1 • {A(l,q)W(s,Z,q)
cos [w(l,q)t - q · R - a(s,l,q)]} (7-9)
Sec. 7-3] EFFECT OF THERMAL VIBRATIONS ON X-RAY SCATTERING 169
Let us consider one of the terms from the product. It can be written as
exp (iz cos ct>), where
z = A (l,q)k1 · W (s,l,q)
cf, = w(l,q)t - q • R; - a(s,l,q) (7-10)
Now one can show that
.l inJn(z)(ein</> + e-in<I>)
00
Jn(z) being the Bessel function of the nt.h order, and where by definition
(7-13)
We now substitute the expression of Eq. (7-11) for each term of the
product in Eq. (7-9). The product of leading terms, J 0 (z), leads to a
constant quantity multiplying the exponential function exp ik 1 • (r. + R;).
Any other terms, however, lead to products of exponentials like
exp ± in[w(l,q)t - q · R; - a(s,l,q)]
oscillator. The first step in carrying out the calculation is to find the
energy of the oscillator, in terms of A.
We can find the energy by finding the mean kinetic energy, and doubling
it, for we remember that for a linear oscillator the mean kinetic energy
equals the mean potential energy. Let us then start with Eq. (7-6) for
the displacement, differentiate with respect to time, find the kinetic
energy from this velocity, and average over time. Since the single sum-
mation in Eq. (7-6) must be squared, we have a double summation, in
which we have products of cosine factors to be averaged. The time
average of a square of a cosine is ½, that of the product of two cosines is
zero, on account of the different frequencies (or the arbitrary phases), and
we are left with the result that
Mean energy of whole crystal
= 1:(s,i,l,q)½m,A 2 (l,q)[W(s,Z,q)]2w 2 (l,q)
= 1:(l,q)½A 2 (l,q)w 2 (l,q) (7-15)
in which we have used Eq. (7-7). Hence we may interpret 3,fw 2 (l,q)A 2 (l,q)
as the energy of the mode Z, q.
Next we must set l\P an expression for the probability of finding A in
the range dA, in thermal equilibrium. We must remember that in
classical statistics, equal areas in a phase space in which the coordinates
and momentum of a particle are plotted as variables have equal a priori
probabilities. The area of phase space enclosed by a curve of constant
energy for a linear oscillator is an ellipse, whose area is proportional to A 2 ,
so that the increment of area between two curves of constant energy cor-
responding to A and A + dA is proportional to d(A 2 ), or proportional to
A dA. The probability of finding the system in unit area of phase space
is, according to the Boltzmann factor and the expression of Eq. (7-15) for
the energy, proportional to exp -A 2w 2 /2kT. Thus the probability of
finding the system between A and A + dA is
I :1 ro b a b"l· A exp (-A 2w 2/2kT) dA
1 1ty = - - ~ - - - - - - - - (7-16)
Jo00 A exp (-A 2w 2/2kT) dA
We must now find the average over A of the quantity
Jo[A(l,q)K · W(s,l,q)]
of Eq. (7-14). To get this, we multiply the Bessel function by the
probability of Eq. (7-16), and integrate over dA from Oto oc. In doing
this, we use the theorem
fo 00
A exp (-aA 2 )J 0 (bA) dA
0 .,., = exp ( -b 2 /4a) (7-17)
lo A exp ( - aA 2 ) dA
Sec. 7-3) EFFECT OF THERMAL VIBRATIONS ON X-RAY SCATTERING 171
M s -_ 2
1[UK2(8,1,")] av IKl2 -- 871" 2[UK2(8 1 '1,")] a v
sin28
~ (7-22)
where we have used Eq. (6-8), IKI = (471" sin 8)/X, and uK is the component
of displacement along K. This furnishes a simple and rigorous deriva-
tion of the Debye-Waller formula for the temperature factor, in the region
of classical statistics; substantially this form of proof was used by Waller
in his thesis. It shows us that in calculating the structure factor of the
crystal, we are to use the product of the atomic scattering factor f. and
the Debye-Waller factor exp (-M.), in place of the factor f. alone, which
would, be used in the absence of thermal oscillation. In the scattered
intensity from a real crystal, in which we are concerned with the square
of the structure factor, the factor exp ( -2M,) enters.
The proof we have given holds only at high temperatures; but Ott,1 and
Born and Sarginson, 2 have given the means of carrying out the same
calculation at low temperatures, where the quantum theory must be used.
To understand the wave-mechanical problem, we must first recapitulate
what we have done. We have started with the sum
~(s,i)J. exp lik1 · [r, + R, + u(s,i)] I
1 H. Ott, Ann. Physik, 23 :169 (1935).
1 M. Born and K. Sarginson, Proc. Roy. Soc. (London), A179:69 (1941).
172 INSULATORS, SEMICONDUCTORS, AND METALS [Chap. 7
and have then taken the time average, which is essentially what we have
done by using Eq. (7-11) and keeping only the term independent of time,
as in Eq. (7-14). Then we have averaged over different amplitudes A,
according to the Boltzmann distribution. We must proceed otherwise
in wave mechanics, for we are not allowed to localize the displacement
u(s,i) of the atom s, i or to write it as a sinusoidal function of time, on
account of the uncertainty principle. Rather, we must assume that the
oscillator is in a definite stationary state, and find the average of the
quantity we desire, which in this case is exp i"k: 1 • u(s,i), over this stationary
state. This can be done, if we know the wave function of the stationary
state, which we do, since we are dealing with linear oscillators. Then,
having found this average, we must assume that the probability of finding
the system in a given stationary state is proportional to exp -E/kT,
where Eis the energy of the state, and must average over this distribution.
Ott has carried out this process, showing by an ingenious method that
the twofold procedure of averaging over the wave function, and over the
statistical distribution, can be combined into a single mathematical proc-
ess, and has been able to evaluate the quantity which we de:.3ire in the
general case (though he does not actually carry the steps through as we
have sketched them). Born and Sarginson have carried through an equi-
valent proof by another method. The net result of this derivation is that
Eq. (7-22) is rigorously true at all temperatures, where it is understood
that [ui_(s,i)]av is to be computed properly according to the quantum
theory, including the zero-point oscillation. Of course, the form of Eq.
(7-19) holds only at high temperature.
7-4. The Temperature-diffuse, or Brillouin, Scattering of X-rays. We
have now considered the Debye-Waller temperature factor, by which the
scattering arising from each of the Fourier components of charge density
which would be present without temperature agitation is reduced by the
thermal oscillations. But in addition, we are interested in the tempera-
ture-diffuse scattering. In the product occurring in Eq. (7-9), where we
expand each term in the form of Eq. (7-11), we see that this forms a power
series in the amplitude A (l,q) of the thermal oscillation. The lowest
power term after the constant term will be that for n = 1 in Eq. (7-11);
for the Bessel function Jn(z) has a power-series expansion which starts as
zn. The simple theory of temperature diffuse scattering uses only this
lowest power of the amplitude, assuming that it is only at rather high
temperature that higher powers are encountered. Similarly it uses only
the case where we have a term in n = I from only one of the factors in
Eq. (7-9), multiplied by the terms inn = 0 from all other factors. The
reason is that if we multiplied two or more terms with n = I, we should
have terms proportional to the products of the amplitudes of two or more
acoustical waves, which we assume that we can neglect as we can neglect
Sec. 7-4] EFFECT OF THERMAL VIBRATIONS ON X-RAY SCATTERING 173
where ef, is given in Eq. (7-10), and where we are not to confuse the factor
i = v -1 multiplying A (l,q) with the index i of summation. Hence to
the approximation we are using the expression of Eq. (7-8) can be written
in the form
"'i:(s,i)f. exp ik1 · (r. + Ri) exp ( -M.)(1 + "'i:(l,q)iA (l,q)k1 · W(s,l,q)
( exp i[w(Z,q)t - q · Ri - a(s,l,q)]
+ exp -i[w(l,q)t - q • Ri - a(s,l,q)])) (7-24)
Let us now take one of the terms from the summation over l, q in Eq.
(7-24). It has an amplitude A(l,q)k 1 • W(s,Z,q), and an exponential factor
exp ±i[w(l,q)t - q • R - a(s,l,q)], which multiplies the exponential exp
il!: 1 • (r, + Ri), That is, the dependence of this exponential on Ri is as
exp i(k 1 + q) • R.. When we sum this exponential over i, the result will
be zero unless k 1 equals K; ± q, where K; is one of the vectors of the
reciprocal lattice. Since the vectors q can fill up the complete Brillouin
zone, we see that the wave vectors of the resulting waves of charge density,
or index of refraction, can have any possible value, so that we are led to a
real diffuse scattering. Though this can occur for any vector in reciprocal
space, however, nevertheless this scattering becomes much stronger near
the lattice points of the reciprocal lattice, as we can show simply.
The reason is that the amplitude of this wave of charge distribution,
and consequently the amplitude of the scattered x-rays, will be propor-
tional to A (Z,q)k 1 • W(s,l,q), as we have seen above. The intensity will
be proportional to the square of this quantity. But by Eq. (7-1.'5), the
average energy of this term is HA 2 (l,q)w 2 (l,q), which is equal to kT in
the range of temperatures where classical statistics holds. Consequently
the average value of A 2 (l,q) is 2kT / w 2 (Z,q), becoming infinite as the fre-
174 INSULATORS, SEMICONDUCTORS, AND METALS [Chap. 7
in which we should not have Bragg scattering from the undistorted crystal.
This scattering must come from the plane wave of charge density whose
If
wavelength is related to the scattering angle by Bragg's law. The inten-
sity of this scattered wave then gives information about a particular
thermal wave. But we have just seen that this intensity is proportional
to 2kT/w 2 (l,q). Thus measurement of the scattered intensity gives the
frequency of the wave, whose wave vector is already known from the
scattering angle. It is clear that the method is not as simple as it seems
at first sight, for we can actually have scattering not only by the three
acoustical modes, but also by the optical modes; for this reason, in a crystal
having more than one atom in the unit cell, special means have to be
used to separate out the scattering by the various branches of the spectrum.
In the cases which have been carried through, it has been possible to
work through to find experimental values of a number of the elastic
constants Cab(s,t,Rv) which we have considered in Sec. 7-2. Then by use
of Eq. (7-5) the frequencies of modes with arbitrary wave vectors have
been found. From this information one can in a well-known way find the
vibrational specific heat of the solid, and in cases where this has been
calculated, it is in good agreement with experiment. It is worth while
pointing out, however, that in addition the Debye-Waller factor could be
calculated once the vibrational frequencies are known, and it would
be a valuable addition to present experimental procedures to find the
Debye-Waller factors theoretically in this way, and compare with direct
observation.
7-5. The Bragg Conditions for Brillouin Scattering. In the preceding
section we have seen that the thermal oscillation of wave vector q will
introduce an exponential term into the charge distribution with wave
1 References to studies by this method are given in Sec. 8-1.
Sec. 7-5] EFFECT OF THERMAL VIBRATIONS ON X-RAY SCATTERING 175
Here we have included only a single sinusoidal wave, for simplicity, and
since they will scatter independently. The amplitude w is that derived
from the small amplitude of oscillation A(l,q), the angular frequency w 1 is
Frn. 7-1. Diagram to illustrate Bragg scattering from moving ultrasonic wave fronts,
resulting in Doppler change of frequency of the scattered radiation.
what we have previously written as w, and the wave vector k1 has the
same significance as in our earlier discussion in this chapter. Instead of
carrying through the whole problem, as in Secs. 6-4 and 6-5 (which can
now be done without difficulty, but which would give us nothing new),
we shall turn at once to the case met in Eq. {6-27), where we are in the
neighborhood of the Bragg angle, so that only a single scattered wave
needs to be considered. Furthermore, from the start, we shall take the
case where D is perpendicular to the plane of the paper, in Fig. 6-1 or 7-1.
In place of Eq. (6-10), we then shall consider only an incident wave, with
angular frequency and wave vectors of w0 and ko, respectively, and a
single scattered wave, with angular frequency wo + w1 and wave vector
ko + k 1 ; we shall show that the superposition of these two waves furnishes
an acceptable solution. We then have in place of Eq. (6-10)
EoE = _! D = [D(O)
Ke
+ wD(k 1)] exp i(wot - ko • r)
+ [D(k + wD(O)] exp i[(wo + w1)t -
1) (ko + k1) • r] (7-27)
In setting up this equation we have disregarded the terms involving
exponentials other than the two written, since further investigations would
show that their amplitudes will be small enough, near the Bragg angle, so
that they can be neglected. There is, in particular, an exponential
These equations differ from Eq. (6-27) only in having (w 0 + w1) 2 in place
of w 2 in the second equation, as well as in the trivial matter that we have
set (K,)av equal to unity in this simple case.
We may now follow the type of discussion used for Eqs. (6-28) and
(6-29), and show that Bragg reflection will occur for a narrow range of
angles in the neighborhood of that determined by the equality and vanish-
ing of the diagonal matrix elements in Eq. (7-28). That is, it is deter-
mined by the conditions
2
k2 _ "'o (7-29)
o - c2
which verifies the statement in the text that not only do we have the two
plane waves appearing in Eq. (7-26), but the wave vector and frequency
of each must be related properly to represent a solution of the wave
equation. Examination of the magnitudes of the various quantities con-
cerned shows that for optical or even more for x-ray frequencies w 0, the
ultrasonic or infrared frequency w 1 of the sound wave will be very small
compared with w 0 , so that the deviation from the ordinary Bragg law is
very small. Examination of the remaining discussion given in Sec. 6-5,
concerning the gaps in propagated waves in the neighborhood of the Bragg
angles,_the damping, and so on, goes through essentially as in that section.
Sec. 7-5] EFFECT OF THERMAL VIBRATIONS ON X-RAY SCATTERING 177
In other words, the only important feature introduced by the fact that
the sound wave is traveling is the very slight frequency change resulting
from the absorption of the phonon by the scattered electromagnetic wave.
The other case, where a phonon is emitted, is obtained by changing the
sign of k 1 in Eq. (7-27).
We can now make connection with our discussion of Sec. 1-1. We
have seen that we start with a wave which is to be scattered, which we
write as the real part of exp i(w 0t - k 0 • r), which in the classical Bragg
case is a wave of x-rays; in Brillouin scattering it could be electromagnetic
waves of any frequency. Next, we have a wave which is to do the scatter-
ing, which we can write as the real part of exp i(w 1t - k 1 • r). In the
case of Bragg scattering by a sinusoidal component of the stationary
electron density, w1 would be zero, and k 1 would be the vector representing
the particular Fourier component of charge density we were considering.
However, if we are considering Brillouin scattering, w 1 is the angular
frequency of the sound wave being considered, and k 1 equals q + K,
where q is the wave vector of the sound wave, K is one of the vectors of
the reciprocal lattice, which can be zero. Then we have found that the
scattered wave is represented by the real part of exp i[(w 0 ± w1)t - (ko ±
k 1) • r) and its amplitude will be proportional to the interaction between
the wave which is being scattered, and the wave which is doing the scatter-
ing. In the x-ray case, with stationary electron density, this scattered
wave has the angular frequency w 0 , since w 1 = 0, and it is one of the
ordinary coherently scattered waves encountered in x-ray diffraction. In
order that the scattered wave may have the same angular frequency wo
as the incident wave, it is necessary that the wave vector (ko ± k1) of
the scattered wave have the same magnitude as the wave vector ko of
the incident wave. This is the condition which was seen to lead to the
Bragg law, in Volume 2, sec. 7-6.
In the more general case where w 1 is not zero, so that the sinusoidal
disturbance which is doing the scattering is a progressive wave rather
than a fixed disturbance, it is still necessary that (ko ± k1) should be so
chosen that the wave with this wave vector may have the appropriate
angular frequency w 0 ± w 1• The scattered wave has a different frequency
from the incident frequency, and as we have mentioned earlier, this is
interpreted as a Doppler effect, since the reflection is from a moving
rather than a stationary set of waves. Thus, if the scattering waves are
traveling upward, in Fig. 7-1, the scattered wave may be considered to be
emitted from a moving image which is traveling upward twice as fast
as the scatterer, so that its emitted frequency will appear greater than the
true frequency. We remember that in the theory of the Doppler effect
it is shown that a source moving with a velocity v, emitting radiation
whose frequency in a system of reference in which the source is stationary
178 INSULATORS, SEMICONDUCTORS, AND METALS [Chap. 7
cases we are most interested in, there are many scattering waves; in
ordinary x-ray scattering, we have all the Fourier components of charge
density, and in scattering by temperature agitation, or thermal diffuse
scattering, we have a very large number of waves of mechanical oscilla-
tion. To handle the problem properly, we must use the equivalent of the
dynamical theory of x-ray scattering, taking into account the multiple
scattering by different mechanical waves. However, in case the inter-
actions are small, the processes of scattering by the various waves can be
handled independently, as is ordinarily the case, to a fair approximation,
with x-rays.
7-6. Scattering of Electrons and Neutrons by Thermal Oscillations.
The principles of the scattering of electrons by thermal oscillations are
essentially the same as those of the scattering of x-rays, as will be obvious
from our general mode of treatment. The scattering will be produced by
the sinusoidal waves of effective potential energy set up by the thermal
oscillation, as we have described in Sec. 2-3, rather than by waves of
density. To a fairly good approximation, the potential energy within a
crystal can be regarded as the sum of potential energies arising from the
separate atoms, and to the approximation to which this can be done, we
can proceed with the theory along lines exactly parallel to those which
we have used in the preceding section, merely substituting for the atomic
scattering factor f, the Fourier transform of the potential energy inside
the atom, rather than the charge density. A good deal of discussion has
been given of the adequacy of this approximation, as we pointed out in
Sec. 2-3, and the net result of this is that the approximation is not quantita-
tively very good, though qualitatively it is correct. The importance of
the scattering of electrons by thermal oscillations comes not principally
from the problem of electron diffraction, but much more because it is the
main cause of electrical resistivity, as we have seen in Chap. 1.
Neutron scattering by thermal oscillations differs from the scattering
of x-rays or electrons in one rather striking way, as a result of the large
mass of neutrons. We have pointed out that in all cases the frequency
of a scattered wave is changed when it is scattered by a wave which
oscillates sinusoidally in time, as a thermal wave does. However, with
x-rays, the frequency of the acoustic vibration is so small that this change
of frequency is negligible. With electrons, it is not quite negligible, but
still small compared with the total energy of the electron. It has its
importance, as we emphasized in Sec. 1-5; it is the mechanism by which
the electron scattered by a lattice vibration transfers energy, which it has
picked up from the external electric field, to vibrational energy of the
lattice, in the case where we have scattering with the production of a
phonon. This, in other words, is the mechanism of the production of
Joulean heat in a conductor.
180 INSULATORS, SEMICONDUCTORS, AND METALS [Chap. 7
ber of crystals have been investigated, using this method, and useful
results have been obtained. 1
The inelastic neutron scattering is free from the difficulty we have just
been describing. The reason is that one can measure not only the direc-
tion in which the scattered neutrons emerge, but also their energies.
Hence one gets separate information about both quantities of interest,
the w 1 and the k 1 or q of the sound wave. Different waves with the
same wave normal, but different frequencies, will deliver different amounts
of energy to the scattered neutron, where we recall that the energy liw 1 is
large compared with the energy of the incident neutron. Hence in each
direction one finds different groups of neutrons, with different energies,
thereby making it easy to differentiate between different branches of the
spectrum with the same wave vector. It is to be noted that though in
principle the same thing would be found with x-ray scattering, in practice
the frequency w1 of the sound wave makes such a small modification in the
frequency wo of the incident x-ray that the frequency change cannot be
measured experimentally. With the neutrons, on the contrary, the meas-
urement is simple.
It should be mentioned for comparison that with visible light, where one
has spectroscopic methods of much higher resolving power than in the
x-ray region, it is not hard to measure the frequency change of the scattered
light. A standard method of investigating ultrasonics is to inject an
ultrasonic wave into a liquid or solid, and observe the Brillouin or Debye-
Sears scattering of a beam of visible light scattered by the wave fronts of
the sound wave. The change of frequency is easily found, from which one
can find the w1 and k 1 or q of the wave, leading immediately to the velocity
of the sound wave. One might ask why this does not give the information
we are interested in, relating to the spectrum of the vibrations of the
crystal lattice, in case the experiment is made on a crystal. The reason
I
'l
1 The reader will find papers dealing with the subject of thermal diffuse scattering
of x-rays and light in the Bibliography at the end of this volume, by the following f
authors:
M. S. Ahmed (1952), J. L. Amoros (1955-1957), B. W. Batterman (1962), G. H.
Begbie (1947), L. Brillouin (1914, 1922), M. Born (1942), M. Canut (1957, 1961), L.
Cartz (1955), W. Cochran (1964), H. Cole (1952-1959), D. Cribier (1953, 1958), H.
Curien (1952, 1955), P. Debye (1913, 1932), H. Faxen (1918, 1923), J. Hoerni (1952-
1956), W. Hoppe (1956), E. H. Jacobsen (1955, 1958), H. A. Jahn (1942), R. E.
Joynson (1954), Y. Kashiwase (1965), M. A. Krivoglaz (1957-1961), A. Laberrigue
(1959), J. Laval (1938-1941, 1958), K. Lonsdale (1941-1942), P. Olmer (1948), S.
Parathasarathy (Hl56), A. Paskin (1958), P. Phariseau (1957), L. P. Potapov (1953),
S. C. Prasad (1955), E. Prince (1953), G. N. Ramachandran (1951), E. Sandor (1959),
K. Sarginson (1942), A. A. Smirnov (1959), S. Takagi (1958), M. Velasco (1954),
E. H. Wagner (1951-1959), C. B. Walker (1956), W. H. Zachariasen (1940-1941), C.
Zener (1936).
Sec. 8-1] LATTICE VIBRATIONS OF METALS AND INSULATORS 183
1 References in the Bibliography at the end of this volume to papers in this field will
4x10 12
3 .... ·\. j:x••••··•t
X
• )(
.
xx!•xxx>
•
. L )(
x •'\ L •
~·
2
~ ••
/\.
X
r
i/f H
•
p N L r
FIG. 8-1. Vibration frequencies of metallic sodium as functions of wave vector, along
100 (,l), 110 (2:), 111 (A), and other directions o·n surface of Brillouin zone. [From
Woods, Brockhouse, March, Steuart, and Bowers, Phys. Rev., 128:1112 (1962).) Cir-
cles, longitudinal mode; crosses, transverse modes. Straight lines represent long-
wave limits determined from macroscopic elastic constants.
Along the directions 001 and lll, or t:. and A, we have a degenerate
transverse mode, with two directions of polarization at right angles to
the wave vector, and a nondegenerate longitudinal mode. In the direc-
tion ~. or 0ll, the symmetry does not lead to the degeneracy, and the
three modes are separated. In all these directions the longitudinal mode
has a higher frequency than the transverse mode. This is a general situa-
tion: the restoring force for longitudinal oscillations, in which the material
is compressed and expanded, is larger than for transverse oscillations, in
which there is a shearing motion. There is, of course, no optical branch
for this case, since sodium, with one atom in its body-centered cubic unit
cell, has only the acoustic branch. Along each of the three directions
mentioned, full lines are drawn in the figure, representing the limiting
straight lines corning from measured low-frequency elastic constants of
the crystal, from which the velocity of sound, giving the slope of the
curve, can be computed. It is clear that these straight lines give cor-
1 A. D. B. Woods, B. N. Brockhouse, R. II. March, A. T. Stewart, and R. Bowers,
Phys. Rev., 128 :1112 (1962); Proc. Phys. Soc. (London), 79 :440 (1962).
Sec. 8-2] LATTICE VIBRATIONS Of METAL:S AND INSULATORS 185
rectly the limiting values of the curves for low frequencies. It is neces-
sary, to get this good agreement, to use elastic constants found at the
same temperature (in this case 90°K) at which the neutron scattering
measurements are made. The results of Fig. 8-1, in which the reader will
realize that each of the points represents direct experimental results, with-
out any theoretical hypotheses, indicate the accuracy with which the
elastic spectra can be found experimentally by this technique.
Results similar to these for sodium have been obtained for a number
of other metals with one atom in the unit cell, including aluminum and
V
7x 1011 ........ .... - - - Point ion model ,.,.,,.-
- - Shell model ,,,,,,
'' /
' .... ,...,_
6
5
L
-....' y / /
/
/
/
/
/
4
..
T • • •
3
r X K r _A L
FIG. 8-2. Vibration spectum of Nal. [As determined by Woods, Cochran, and Brock-
house, Phys. Rev., 119 :980 (1960).] Optical branches above, acoustic branches
below. The dashed Jines represent calculations by the point ion model, the full Jines
by the shell model, as described in Sec. 9-5.
II
9xl0'2 • •• • •
• • • • • ••
8 •• •
7 •
6 •• •
5 •• •
•
4 •
3
• • ••
2 • • • ••
1
0
r A L r ti X
Fm. 8-3. Vibration spectrum of germanium. [From Brockhouse and Iyengar, Phys.
Rev., 111 :747 (1958).]
The three cases which we have illustrated are typical of the rather
restricted set of cases which have been worked out experimentally. As
we have mentioned, we shall discuss the attempts to derive these spec-
trum distributions theoretically later in Sec. 9-5. Before doing so, how-
ever, we shall come in the next section to a discussion of an interesting
and well-known phenomenon, the so-called residual rays, or Reststrahlen.
This is a phenomenon met with the alkali halides, and similar ionic
crystals, whose study dates back to the early 1900s. Rubens, and vari-
ous other experimenters, were studying the reflection of crystals in the
very far infrared part of the spectrum. They found a maximum of
reflecting power at a fairly definite frequency, which was observed by
allowing the radiation, with a continuous frequency distribution, to be
multiply refleeted by mirrors of the material concerned. When the
resulting radiation, after many reflections, was examined spectroscopi-
where N is the number of positive ions per unit volume (if we assume that
they move with respect to an equal number of negative ions), m is the
reduced mass of the ions, w 0 is the natural resonant frequency in the
absence of the Lorentz correction, and where on account of the Lorentz
correction the resonant frequency is modified to the value
(8-3)
where c is the velocity of light in empty space, as we see from Eqs. (4-17)
and (4-18), plus the fact that the phase velocity of the wave is w/k. If
we insert Eq. (8-3) into Eq. (8-1), we have an equation relating w and k.
In Fig. 8-4 we have plotted w as a function of k, from this equation,
combining the resulting curve with that of was a function of k for sodium
iodide, from Fig. 8-2; we indicate propagation along the 100 direction
only. It is the features of Fig. 8-4 at small k which are of interest here,
and which arise from Eq. (8-1); they are not present in Fig. 8-2. Let us
discuss these features.
These features at small k should really be squeezed even farther to the
left than is indicated, so far that they would not show at all on this scale,
and we have had to draw them incorrectly to make them visible. In the
first place, we have an almost vertical straight line through the origin,
given by the equation k = w/c, or w = kc. As we have just mentioned
the ratio w/k gives the phase velocity. We have not pointed out before
that in the acoustical branch of the spectrum, where the tangent to the
curves at k = 0 measures the low-frequency velocity by its slope w/k,
the fact that the curves are not straight indicates dispersion: the velocity
of the acoustic waves decreases for high frequency. The slope of the
curves, dw/dk, measures the group velocity, as we recall, and this is differ-
ent in such cases from the phase velocity. Now we can understand the
curve w = kc. This is a straight line representing propagation with the
velocity w/k, or c, the velocity of light in free space. Since this velocity
Sec. 8-3] LATTICE VIBRATIONS OF METALS AND INSULATORS 189
is many powers of 10 greater than the velocity of acoustic waves, the slope
of this curve should be so great that it would be practically vertical; but
as stated above, we have modified this by using a smaller slope, so as to
make this part of the figure visible.
The intersection of this almost vertical line with the curve of w versus
k for the transverse optical mode is what we have considered in our
elementary treatment of residual rays in the preceding section. In the
phenomenon of absorption of light by the crystal, a photon of light is
annihilated, and a phonon of elastic vibration is produced, taking up both
w
Electromagnetic
mode
Electromagnetic
mode
r t:,. X
Frn. 8-4. Vibration spectrum of Nal, as in Fig. 8-2, with schematic indication of
effect of interactian with electromagnetic mode of oscillation, at very small wave
number or very long wavelength. [As discussed by Huang, Nature, 167:779 (1951).)
the energy and the momentum of the photon. The conservation laws are
obeyed at the point where the curve of w versus k for -the transverse
optical mode, and the curve w = kc for the photon, intersect, for there
they both have the same frequency (and hence the same energy), and the
same k (and hence the same momentum). Since the curve w = kc is
nearly a vertical line, this means that the frequency of residual-ray
absorption is practically the value indicated in Fig. 8-4 as wr at which
the transverse optical curve intersects the axis of ordinates, which is the
value suggested by the elementary treatment.
The true situation, however, is more complicated than this. We noted
above that the dielectric constant equaled (kc/w) 2 for the electromagnetic
190 INSULATORS, SEMICONDUCTORS, AND METALS [Chap. 8
as we see from Eq. (8-1). This equation, as we noted earlier, gives lkl
as a function of w through the region of anomalous dispersion in the
neighborhood of the residual-ray frequency, and it is this equation which
is plotted on the left side of Fig. 8-4. This represents the propagation of
an electromagnetic wave in the dielectric medium (with neglect of the
absorptive term in the equation of motion of the vibrating particles).
Let us examine the various features of the curve, which merely represents
the anomalous dispersion phenomenon, when interpreted in terms of a
curve of w versus lkl.
First let us consider the case where the frequency w is small compared
with the value v w~ - N e2/3me 0 • Then we see that
k2 = w2
c2
(l + w5 -NeN/meo
2
e /3meo
2
) (8-5)
For this part of the curve, w is proportional to lkl, and the velocity,
w/lkl, is less than c, being in fact simply the velocity of an electromagnetic
wave in a medium whose index of refraction is given by the square root of
the dielectric constant given in the parentheses in Eq. (8-5). This leads
to the straight-line portion of the curve shown for small wand lkl, with a
slope somewhat smaller than the value c characteristic of the velocity of
light in empty space.
Next, as w approaches the value y w5 - Ne 2/3me 0 , we see from Eq.
(8-4) that the wave vector lkl becomes infinite. What is actually happen-
ing here is that this curve is merging with the one which we have drawn
giving the value of w versus !kl for the transverse optical mode; there is
nothing in our simplified theory to give the departure of this curve from a
straight line, and in fact this departure comes only when the wavelength
gets small compared with the free-space wavelength of the electromagnetic
wave concerned. In other words, we have a mode of oscillation which, at
frequencies much less than the one concerned, is really an electromagnetic
wave, while near this frequency it becomes an elastic wave. Born and
Huang, 1 to whom the discussion of the present section is due, have
investigated the relative magnitudes of the electromagnetic field vectors,
and of the amplitude of mechanical oscillation, as we go through this
region, and have shown that in the almost vertical part of the curve the
electromagnetic vectors are large and the mechanical amplitude is small,
1 M. Born and K. Huang, "Dynamical Theory of Crystal Lattices," Oxford Uni-
versity Press, New York, 1954. K. Huang, Nature, 167 :779 (1951); Proc. Roy. Soc.
(London), A208 :352 (1951).
Sec. 8-3] LATTICE VIBRATIONS OF METALS AND INSULATORS 191
lkl for these two modes do not cross. Between the frequencies WT and WL
there is absorption of the transverse modes. If we introduce a real
absorption term into the differential equation, the absorption maximum
proves to come at WT, verifying the observation that this is the residual-ray
frequency (for the high reflectivity going with the residual-ray phenomenon
is associated with an absorption maximum). The experiments show a
wide range of absorption about this frequency, presumably connected
with the phenomenon we have just been observing.
We see that we now have the material for giving formulas relating the
frequencies WT, wL, and the features of the dielectric constant. These
formulas were originaily derived by Lyddane and coworkers, and by
Frohlich and l\fott, 1 and have been recently stressed by Cochran. 2 We
recall that WT is the frequency for which the denominator in the dielectric-
constant formula goes to zero, and WL is that for which the whole dielectric
constant goes to zero. Hence we have
wi = w5 - Ne 2/3mEo
Ne /mEo
1 + -~-~--~- 2
-wi + wg - Ne /3mEo 2
=0 (8-6)
ing in that section, might become so large as to reduce the resonant fre-
quency V wfi - Ne 2/3mE 0 to zero, where w 0 in that section referred to an
electronic resonance frequency. We pointed out that this would result
in an infinite dielectric constant at zero frequency, leading to the phe-
nomenon of ferroelectricity. We pointed out that this was not likely
to happen, but mentioned that as a result of the joint action of electronic
and lattice polarization we might have such a situation. We have now
considered the lattice polarization, and have seen that it makes a con-
tribution similar to that of the electronic polarization. It is obvious
that we should next ask how to combine these two effects, since a real
crystal composed of ions, like an alkali halide, will have both types of
polarizability. We shall take this topic up next.
In the meantime, however, we may note that, as Cochran (Zoe. cit.)
has pointed out, if the denominator in Eq. (8-7) goes to zero, which is
what would lead to the infinite dielectric constant at zero frequency, as
in a ferroelectric, we should have wi/w~ becoming infinite, which would
imply that WT should go to zero. This observation of Cochran's, that
the frequency of the transverse optical mode should go to zero in a ferro-
electric case, can be proved for much more general models than we have
used here, so that it is undoubtedly a valid conclusion. In Sec. 8-5 we
shall discuss an experimental verification of this prediction.
8-4. Lattice and· Electronic Polarization. In the preceding sections
we have been seeing that to a certain approximation we can handle the
effect of the lattice vibrations on the dielectric constant of an ionic crystal
such as an alkali halide simply as a resonance term in the Drude-Lorentz
theory. From Fig. 8-4 we see that this is allowed for wavelengths large
compared with the lattice spacing; as we go to smaller wavelengths, or
larger wave vectors, the theory must merge somehow into a more elabo-
rate theory of the lattice vibrations, and must take account of the disper-
sion of these vibrations. The resonance frequency which we must assume
for the residual-ray type of lattice oscillation is given by Eq. (8-2), if we
are assuming the correctness of the Lorentz factor for this particular case.
We realize, however, as we have been mentioning in the preceding
section, that there are other contributions to the dielectric constant, or
refractive index, of an ionic crystal: there is the electronic polarizability,
describable by the method of Drude and Lorentz, with resonant fre-
quencies which, according to the quantum theory of dispersion, as given
by Kramers and Heisenberg, are associated with electronic transitions
from the ground electronic state of the crystal to excited states.
In Volume 2, Figs. 10-27 and 10-28, we have seen the general nature
of the energy bands of an alkali halide. There is a gap of considerable
amount between the topmost occupied band [for NaCl, that arising from
the CJ- 3p atomic orbitals, if we describe the bands in the language of the
194 INSULATORS, SEMICONDUCTORS, AND MET~LS [Chap. 8
where as before in is a reduced mass for the ions. Here we recall that Koo
goes through an anomalous dispersion region in the ultraviolet, but is
1 See R. Hilsch and R. W. Pohl, Z. Physik, 59:812 (1930).
Sec. 8-4] LATTICE VIBRATIONS OF METALS AND INSULATORS 195
k 2 = w2
c2
(K + Ne
"'
/me
w} - w
2 0)
2
(8-9)
+ Ne 2/mto = 0 (8-10)
K.., 2 2
WT - WL
(8-11)
Let us start with Eq. (4-20). In place of the local field E + P/3£o,
we shall use E + bP /3£ 0• In place of the term
i--vw=ic
Ultraviolet { ~- Optical
resonance
,Electromagnetic
mode
LO
Lattice
TO } vibration
Infrared { L~
TA
modes
r
Fw. 8-5. Diagram similar to Fig. 8-4, but carried to much higher frequency, to
indicate schematically the effect of the electronic resonance at ultraviolet frequency
on the curve of w versus k.
+ Ne 2/m
a " 2
(8-13)
Wo - W
a/Eo
Koo = l +1- (b/3)(a/Eo) (8-16)
We now substitute from Eq. (8-19) into Eq. (8-17), solve for Kc, and
multiply numerator and denominator of the fraction by (w~ - w2 ) (1 - ab/
3Eo). The result then can be written in the form
[I (b/3)(K +
1)]2(Ne 2 /mE 0 ) 00 -
This equation differs from Eq. (8-1) in three respects. First, the constant,
nonresonant term is K rather than unity. Second, there is a factor
00
multiplying the resonant term. Third, and most important, the fre-
quency wr, for which the resonant term becomes infinite, is given by
T, T
!
Titanium
Oxygen II
For some time the details of these displacements were not known.
However, the neutron diffraction work of Frazer, Danner, and Pepinsky
[Phys. Rev., 100 :745 (1955)] has shown the nature of the displacements.
Below a critical temperature, the oxygen ions displace along a 100 direc-
tion, while the titaniums and bariums displace in the opposite direction.
Each different set of ions displaces by different amounts, but the general
situation is a relative motion of the positive and negative ions. The
actual displacements are shown in Fig. 8-7.
1 For references on this substance, see papers in the Bibliography by J. West (1930),
The details of the phenomenon have not been worked out since these
exact displacements were known. However, the treatments of Devonshire
and of the present author (loc. cit.), carried out before the neutron work,
explain the general outlines of the phenomenon. The work of the present
author, in particular, considered the effect of the Lorentz factor and the
electronic polarizability in enhancing the effect of the polarization arising
from ionic motion. It was assumed in the latter work, for lack of better
information, that the ionic motion concerned was that of the titanium
with respect to the oxygens. Though this has not proved to be exactly
the situation, still it furnishes a not unreasonable first approximation.
The Lorentz factor was considered, leading to a complicated situation,
since the polarization of each of the types of ions would exert fields at the
position of each type of ions. However, it was found that the effective
Lorentz correction at the position of a titanium ion was some three times
as large as the standard Lorentz value. This came about on account of
the oxygen ions close above and below the titanium, as we see in Fig. 8-7.
We may, then, roughly take b = 3 in the enhancement factor of Eq.
(8-23). Furthermore, the dielectric constant K"' of barium titanate at
high frequency is approximately 5. 76. Hence the enhancement factor
is of the order of magnitude of 3(5.76) = 17.3. Actually, a somewhat
smaller value was found. This is large enough, however, to make it
plausible that even a relatively small term (Ne 2 /m~o) could be enhanced
sufficiently to allow it to cancel w~. While no claim can be made at
present for the accuracy of the calculation, at least it shows the importance
of the type of enhancement which we have considered in the preceding
section, and makes it plausible that we might find a dielectric constant
of very high value, in spite of the fact that the individual polarizabilities
concerned were of normal size.
Next we should consider the explanation of the temperature dependence
of dielectric constant above the critical temperature, given by Eq. (8-24),
as well as the factors limiting the polarization below the critical tempera-
ture to a finite value. If the crystal becomes infinitely polarizable, why
do not the ions displace by an indefinitely large amount? The reason, as
Devonshire and the present author (loc. cit.) have pointed out, is that we
must assume a nonlinear restoring force acting on the ions, for the large
displacements encountered in this case. If we assume that there is not
only a linear restoring force, or a corresponding quadratic term in the
energy, but also a fourth-power term in the energy, we can get a set of
curves of energy versus displacement, at different temperatures, similar to
that given in Fig. 8-8. Here ,ve have over,,implified the problem by
assuming that the linear restoring force goes to zero at the critical temper-
ature, but more elaborate study of the statistical mechanics of the problem
indicates that such a picture is essentially correct. We can see that above
Sec; 8-5] LATTICE VIBRATIONS OF METALS AND INSULATORS 201
the critical temperature, the restoring force gets smaller and smaller as the
temperature is reduced. Below the critical temperature, on account of
the fourth-power term in the energy, we find two minima. In an external
field, one of these will lie lower than the other, and the ions will settle in
that minimum, corresponding to a permanent polarization, as is observed.
It now turns out that when statistical mechanics is properly applied to
the problem, the presence of the fourth-power term in the energy results
in a value of wo which is effectively a slowly varying function of tempera-
ture. Looked at very crudely, at high temperatures the amplitude of
oscillation will increase, the fourth-power term will increase, and will
5 X 1012 >-
0 0 O O O
0 •• • • • 0
4
• e I)
3 ~ 0 • ...
u
I)
• .,
C
::,
a-
2 ~
• o 296°K
u..
- • 90°K
Fm. 8-9. Frequency versus wave num- Frn. 8-10. Square of frequency of
ber for transverse optical mode of transverse optical mode at zero
SrTiO, at two temperatures, 296 and wave number, for SrTiO,, as func-
90°K, illustrating decrease of frequency tion of temperature, illustrating
wr in a ferroelectric as the temperature vanishing of the frequency at the
is reduced to Tc. [From R. A. Cowley, critical temperature. [Curve from
Phys. Rev. Letters, 9 :159 (1962).] Cowley (loc. cit.).]
velocity of light, but much more like the velocity of sound. The curve
merges into the curve representing the elastic vibration, not at a very
small value of k or q, but at a value representing quite a large fraction of
the dimensions of the Brillouin zone. In Fig. 8-10, Cowley has shown ''1
'i
the temperature dependence of this transverse optical mode. Since we i
!
expect w~, as given in Eq. (8-22), to be proportional to T - Tc, Cowley
plots the square of the frequency against the temperature, and gets an
approximately straight line.
We have seen here some of the elements going into the theory of ferro-
electricity. The reader must have felt, throughout the present chapter,
1 R. A. Cowley, Phys. Rev. Letters, 9 :159 (1962).
Sec. 8-6) LATTICE VIBRATIONS OF METALS AN.D INSULATORS 203
Born and Lande 1 wished to describe this repulsion. Since the analytic
form of the repulsion could not be derived from any theory then available,
they looked for an empirical function which would have the proper
behavior, of increasing very rapidly as the internuclear distance decreased.
One of the simplest such functions is an inverse power, such as 1/rn. If
each pair of ions, at a distance r from each other, repels like 1/rn, the
sum of these terms will go as I/an. The constant in the total energy
can be easily found from that for a pair of ions, for if n is large, the repul-
sions between distant ions will be very small, and we can find the total
repulsive energy by summing the interactions between individual ions,
dealing with a very rapidly converging sum. As a result of this, Born
and Lande postulated that the total repulsive energy could be written
as B/an. The sort of value of n which they were considering was a large
integer. From arguments based on an electrostatic model of the atom
which was in vogue at that time for chemical applications, they arrived
at a value of n = 9 for all the alkali halides except the lithium salts, for
which they deduced n = 5. The theoretical basis for these numbers is
now seen to be invalid, but the numbers are fairly near the best experi-
mental values.
With these assumed interionic interactions as a basis, Born, Lande,
Madelung, and various other writers 2 carried out an extensive study during
the years following 1918 of the statics of ionic crystals, particularly the
alkali halides. They considered a crystal with the structure of sodium
chloride, but in which the lattice spacing a, or in other words the volume,
was variable. By studying the energy as a function of the volume, there
are a number of experimental quantities which can be predicted. We
may expect that the energy as a function of interatomic spacing will
behave very much like the energy of a diatomic molecule as a function of
internuclear separation, as discussed in Volume 1. Just as withdiatomic
molecules, there will be an energy minimum corresponding to the equilib-
rium atomic or ionic positions. The dimensions of the crystal, which of
course are found experimentally by x-ray diffraction, will be found from
the internuclear separation at this minimum of energy. The energy
required to dissociate the crystal is the difference between the energy at
1 M. Born and A. Lande, Sitzber. preuss. Akad. Wiss., 1918, 1048; Verhandl. Deut.
the minimum and the value at infinite separation of the nuclei. These
dissociation energies are known experimentally from thermochemical
experiments.
In addition to these two experimental quantities, we have information
about the behavior of the curve of energy versus internuclear separation,
in the neighborhood of the minimum. We have experimental measure-
ments of the compressibility of the crystal, and of the change of com-
pressibility with pressure. For many substances we have curves of
volume, or internuclear separation, as a function of pressure, over quite
a large pressure range. From such curves, we can deduce the energy as a
function of internuclear separation, over an equally great range. 1
In spite of the simplified hypotheses which went into the theory of the
cohesive energy of ionic crystals, of Born, Lande, l\lfadelung, and others,
it had a very considerable success. The reason for this was that the main
term in the cohesive energy of such a crystal is simply the electrostatic
attraction between the oppositely charged ions. This is a purely classical
effect, which did not require the wave mechanics for its understanding.
The other term, the repulsion between ions at shorter distances, which
was put in as an empirical quantity, could be estimated well from some of
the experimental facts, and was then used to predict other effects. It
was only later that this empirical theory gave way to wave-mechanical
theories, which explain the cohesion of ionic crystals in a completely non-
empirical manner, as we shall describe in Sec. 9-6. There the total energy
of the crystal, as a function of the nuclear positions, was computed, and
by the Born-Oppenheimer theorem it could be used as a potential energy
function for studying the nuclear motions.
Theories of the type we have been describing, both the earlier classical
theory, and the later wave-mechanical one, serve not only to describe the
statics of a crystal lattice, but also its dynamics, the study of atomic
vibrations, which we have been meeting in the preceding chapters. This
problem is far more complicated than for the diatomic molecule. The
crystal can be distorted not merely by expanding or contracting it as a
whole, retaining the same geometry, but also by displacing any individual
atom or ion in the crystal from its equilibrium position. Thus as we
have seen it has 3N degrees of freedom, and 3N normal modes of vibration.
These modes constitute the elastic spectrum of the crystal, which we have
been describing in the preceding chapters, and at any temperature above
the absolute zero, they will have varying amounts of excitation. There
has been a good deal of study of the elastic spectrum, both on the basis
of the classical Born-Lande type of theory, and by use of more sophisti-
cated methods, which we shall describe in Sec. 9-5. However, we still do
1 For a detailed discussion of these points, see J.C. Slater, "Introduction to Chemical
where a is the lattice spacing, A and B and n are constants, the first term
represents the Coulomb attraction between ions, and the second represents
the repulsions between the closed-shell structures of the ions. From this
equation we can derive the various quantities which we have mentioned
in the preceding section. We shall first express the energy in terms of the
volume, rather than of a. We let V be the volume of the cube of side a,
and let E be the energy in this volume. Then V = a 3, and
A B
E = - V~i + vn1a (9-2)
(9-4)
Eo = - -~1
V0
(1 - n~-) (9-6)
9Vr (9-7)
xo = A(n - 1)
210 INSULATORS, SEMICONDUCTORS, AND METALS [Chap. 9
V. = \' (j ~ i) q; (9-10)
/..; r;;
and the½ in Eq. (9-8) arises because if we should combine Eqs. (9-8) and
(9-10) to get the result of Eq. (9-9), we should be having a double sum
over i and .i, which would give twice the sum over pairs ij, the 2 being
canceled by the ½ in Eq. (9-8).
To find the electrostatic energy of an ionic crystal composed of point
ions, we must then find the potential at each ion arising from all other ions
212 INSULATORS, SEMICONDUCTORS, AND METALS [Chap. 9
except itself; the summation in Eq. (9-10) of course does not include the
term j = i, which would be infinite. This is not a trivial problem. If we
have the NaCl problem, a positive ion is surrounded by 6 negative ions
at distances a/2, by 12 positive ions at distances a y2/2, and so on.
More generally, we shall find other ions for x = n 1a/2, y = n 2a/2,
z = n3a/2, where n 1, n 2, n 3 are any positive or negative integers. If
n1 + n2 + n 3 is even the other ion will be positive, while if it is odd it will
be negative. In Table 9-1 we give the tabulation of the neighbors with
Number
n1n2n, of Distance Contribution to potential energy
neighbors
and each one at a corner as being one-eighth inside, the total charge
within the cube will be zero. Enlarging the cube by a distance a/2 all
around will then add a volume that contains a net charge of zero, and so
contributes fairly little to the total potential at the origin. In other
words, if we set up the total potential energy of interaction of the ion at
the origin, and all ions in such a cube, the result should converge fairly
rapidly as the size of the cube is increased.
This is in fact the case. If the cube extends from - a/2 to a/2 along
each axis, the points 100 will be counted as half in the cube; those at 110
Fm. 9-1. Ions in NaCl structure on faces, edges, and corners of a cube, illustrating
Evjen's method of evaluating Madelung's constant.
will be a quarter in; and those at 111 one-eighth in. Thus the contribution
of these terms to the potential energy will be e2/ a times
_ 12.0~0000 + 16.9:0563 _ 9.23:604 = -2.912060 (9-11)
If the cube extends from -a to a, the points 100, 110, 111 will be entirely
inside the cube, those at 200, 210, 211 will be half inside, those at 220, 221
one-quarter inside, and those at 222 one-eighth inside. Thus for the
potential energy we have e2/ a times
-12.000000 + 16.~70563 - 9.237604
+ ½(6.000000 - 21.4662.52 + 19.595918)
+ H(8.485282 - 16.000000) +
½(4.618802)
= - 3.503538 (9-12)
Similarly if the cube extends from -3a/2 to 3a/2, the sum comes to
- 3.494078. We see that these numbers are converging, and would guess
that the true answer is somewhere between -3.503538 and -3.494078.
This assumption is correct. The accepted value of the constant, generally
called the Madelung constant, is -3.495129, to six decimal places. 1 We
see, however, that even with Evjen's method of accelerating the con-
vergence, the direct summation is not a very good way of computing the
1 Y. Sakamoto, J. Chem. Phys., 28 :164 (1958). For an earlier, slightly less accurate
value, see 0. Emersleben, Z. Physik, 24 :73, 97 (1923).
214 INSULATORS, SEMICONDUCTORS, AND METALS [Chap. 9
where the first form holds in Gaussian units, or with Hartree atomic units
(if in the latter case the distances are measured in atomic units), and the
second holds in mks units. We shall use the first form, which goes with
the units we have been using in the preceding section. In Eq. (9-15), q, is
the potential in Gaussian units, or the potential energy of a charge of
magnitude 1 electronic unit in Hartree atomic units. The quantity p is
the charge density, in Gaussian units, or in units of numbers of electronic
charge per volume at where a 0 is the atomic unit of length, if we are using
Hartree atomic units. The proof that the solution of Poisson's equation
can be written as a sum of terms q/r is given in elementary discussions of
electrostatics, by means of Green's theorem.
In the preceding section we have seen that it is not very practical to
solve the problem we are interested in by direct summation of terms q/r.
We shall find that it is much more convenient to look for a solution of
Poisson's equation. Here we shall first try to take advantage of the
periodicity of the crystal, and express both q, and p in three-dimensional
Fourier series. We let
(9-16)
where the Km's are the wave vectors of the reciprocal lattice, and the
P's are coefficients. "\Ve have, in other words, an expansion such as
was considered in Volume 2, Chap. 6, and again in Sec. 4-3 of the present
volume. On account of the periodicity of the crystal, we can always
carry out such an expansion. Then the solution of Poisson's equation,
216 INSULATORS, SEMICONDUCTORS, AND METALS [Chop. 9
IKml increases, but their amplitudes will not decrease with increasing IKI,
so that we have no convergence.
In other words, our attempt to solve Poisson's equation in terms of a
Fourier expansion has not improved the situation at all; we have no better
convergence than we had with the direct sum of Coulomb terms 1/r. It
was to avoid this difficulty that Ewald introduced his famous device,
which we have already mentioned in Sec. 4-3 (see, in addition, Appendix 4).
We may describe this device in the following language: We replace each
point charge, or delta function, by a Gaussian function,
(9-20)
the origin. Its tail will extend outside the unit cell, but tails of Gaussians
in other cells will extend inside, exactly compensating, so that we shall
get the correct integral if we integrate a single Gaussian over all space.
Thus we have
Thus the expression replacing Eq. (9-17), for the potential of the Gaus-
sians plus the uniform negative charge distribution, is
,i. = 41r \' (K ~ 0) exp (-K!,/4e 2) exp (iKm • r)
(9-23)
'I' n L., "' \K,,.\2
In other words, the Gaussian convergence factor exp (-\Km\ 2/4E 2) has
been introduced as compared with the potential of the point charges.
By a suitable choice of E, the essential contributions to the summations
of Eq. (9-23) come from only a few terms.
Next we must find the potential at a distance r from a unit point charge,
surrounded by a negative Gaussian distribution given by Eq. (9-20).
By direct integration of Poisson's equation in spherical coordinates, we
find that this potential is
1 -
cf>= - 2 !."'
r 7r½ ,r exp (-x ) dx
2
1 - erf (er)
(9-24)
r
where erf x is the error function,
2 {" (9-25)
erf x = 1r½ Jo exp ( -x 2 ) dx
We can then get the potentials of all Gaussians plus point charges, at
an arbitrary point of space, by adding the functions of Eq. (9-24) for
each such charge. On account of the falling off of the tails of the Gaus-
sians, we find as mentioned earlier that we need to take into account
only a very limited number of Gaussians in our summation. We then
add this summation of functions of Eq. (9-24), and the potential of
Eq. (9-23), to find the total potential.
There is still something missing, however. In the integration of
Poisson's equation to get the potential of Eq. (9-17), we have noted that
we could have had a constant of integration. This contribution in the
present case could depend in any arbitrary way on the parameter e. But
we must now demand that the potential at a given point of space be
independent of e. We find that if choose this constant of integration to
equal -1r/0E 2 , we achieve this result. That is, we have
(9-26)
(1950).
222 INSULATORS, SEMICONDUCTORS, AND METALS [Chap. 9
(a)
(b)
(cl
(d)
Frn. 9-2. Diagram illustrating the shell model. Larger circles represent electron
shell of negative ions; smaller circles, of positive ions. Points represent nuclei and
inner cores: (a) Undisplaced positions of ions; (b) ions displaced bodily, without dis-
tortion, by electric field pointing to right; (c) shells displaced to left by field, showing
effect of electronic polarization [nuclear positions same as in (b )] ; (d) shells of adjacent
ions pushed apart by repulsive effect, partly canceling effect of electronic polarization.
8 :280 (1952), 12 :454 (1954). J. Yamashita and T. Kurosawa, J. Phys. Soc. Japan,
10 :610 (1955).
2 B. G. Dick, Jr., and A. W. Overhauser, Ph,is. Rev., 112 :90 (1958).
to the case of sodium iodide which was used as an illustration in Fig. 8-2.
In (b) we show the result of displacement of the ions, as would occur in
the residual-ray or transverse optic mode if there were no electronic
polarization. We assume an electric field along the x direction, and show
the positive ions displaced in that direction, the negative ions displaced
in the opposite direction.
In addition to this effect, however, there will be electronic polarization,
in which we can consider very roughly that the shell of negative charge
is being displaced along the direction of negative x, leaving the nucleus
undisplaced. Since the polarizability of the negative ion is much greater
than that of the positive ion, we have shown in (c) a considerable displace-
ment of the outer electronic shell of the negative ions to the left, with very
little dispacement of the shells of the positive ions.
We now notice, in (c), that we have closely spaced pairs consisting of a
positive and a negative ion. In such a case, from the principles of molec-
ular theory, as outlined in Volume 1, we know that there will be distor-
tion of the electronic shells, not taken into account in the simple theories
of ionic displacement and electronic polarization. We clearly have a par-
tial overlapping of the closed-shell structures of a positive ion and its
neighboring negative ion. In such a case, as we know from the very ear-
liest example of repulsive electronic states treated in Volume 1, namely,
the Ht ion, overlap charge will be removed from the region of overlap of
the ions, and will reappear on the opposite sides of the ions. In fact, it
is this redistribution of overlap charge which is partly responsible for the
repulsion. In Fig. 9-2d, we have endeavored to show this effect schemati-
cally by pushing the electronic shells of the negative ions slightly to the
right, those of the positive ions slightly to the left, on account of the local
repulsions of the shells. The net result of this is that this repulsive effect
between shells produces a net polarization, particularly of the negative
ions, in the opposite direction to that already produced by the displace-
ment of the ions, and the electronic polarization. This affects both the
dielectric constant and the forces acting on the ions.
Yamashita and Kurosawa, Dick and Overhauser, and Hanlon and
Lawson all considered approximately this same effect, and were par-
ticularly interested in the effect on the dielectric constant. Dick and
Overhauser made some effort to calculate the amount of displacement of
the shells on account of overlap, by comparison with the Reitler-London
calculation of the repulsion of two helium atoms, which we have outlined
in Volume 1. 1 The other writers have treated the effect simply as an
1 They did not, however, take aecount c,f the need of varying the wave function~ so
as to minimize the energy, and of its effect on the virial theorem and the relation
between kinetic and potential energies. As a result of this, they came to erroneous
conclusions regarding the changes of potential and kinetic energy in the process of
overlap.
224 INSULATORS, SEMICONDUCTORS, AND METALS [Chap. 9
formulas for energy and other quantities are much simpler in such a
case than when nonorthogonal orbitals are used.
The various integrals which must be calculated to find the energy are
familiar from earlier discussions which we have given of the energy of
single determinantal functions. One meets the various types of integrals
encountered in molecular theory: one-center, two-center, three-center,
and four-center integrals. Lowdin computed the required integrals,
using a method essentially the same as that of Barnett and Coulson (see
Volume 1, Appendix 15, for a discussion of this method), though his work
in fact preceded that of those workers. He was able to make simplifica-
tions on account of the fact that he was dealing with closed shells of
electrons; in many cases he could combine integrals connected with the
various m values, where m is the magnetic quantum number of the atomic
problem, in such a way as to simplify the results. Some of the integrals
are of the Coulomb type, and these include calculations of the interaction
of nuclei on each ion, with the total charge distributions of all other ions
in the crystal. These terms are of the type which we have been con-
sidering in the preceding sections dealing with the Madelung problem
and Ewald's method of solving it. These applications of Ewald's
method find their place in Lowdin's calculation, and if one analyzes it,
one finds that here, as in the classical theory of Born and Lande, the
electrostatic interactions between ions form the leading term in the
problem. It is not surprising, then, that the final result resembles that
of Born and Lande, and in turn agrees with experiment. ·
What Lowdin found, in fact, was a far-reaching resemblance between
the quantum-mechanical calculation and the Born-Lande theory. There
is no point going into the details of the calculation. As we have indicated,
it does not involve any types of result which were not already familiar,
either from molecular calculation or from the Madelung theory. We
shall instead concentrate on the results. As we have just hinted, there
was a widespread agreement with experiment, holding qualitatively, and
to a very considerable extent quantitatively. ·
For example, in Fig. 9-3 we give a figure from Lowdin's paper, showing
a remarkable agreement with experiment. This figure shows results on
the change of volume with pressure of KCl. Instead of merely computing
the compressibility and its change with pressure, Lowdin has found the
fractional decrease of volume as a function of pressure, over a range com-
parable with that which can now be reached by high-pressure experimenta-
tion. There are two curves of volume versus pressure in Fig. 9-3, one for
the sodium chloride structure, the other for the cesium chloride structure.
It is found experimentally that though KCI has the sodium chloride
structure at low pressure, it changes to the cesium chloride structure at
high pressure. The latter structure has a smaller volume. The experi-
Sec. 9-6] THE LATTICE ENERGY OF IONIC CRYSTALS 229
Fw. 9-3. Lower curves, relative compression AV /Vo of KCl as function of pressure.
[From Lowdin, Advances in Phys., 6 :1 (1958).] Theoretical curves show both the
NaCl and CsCl structures. Experimental curve shows polymorphic transition,
sudden transition from NaCl structure at low pressure to CsCl structure at high
pressure. Upper curves, free energy of both phases as function of volume, theoretical.
The stable state is that of lower free energy. The two curves should cross where
transition occurs.
We next ask: Why do we have the transition from the one crystal
structure to the other at the particular pressure where it occurs? Here
we must make connections with the thermodynamic theory of phase
transitions. (See for instance Slater, "Introduction to Chemical Physics,"
chap. XI, particularly sec. XI-7.) The condition for equilibrium between
two phases is that their free energies should be equal, and the phase with
the lower free energy is the stable phase. To find where the transition
should occur, one must then compute the free energy of each phase as a
function of pressure, and see where the two curves intersect. This was
done by Lowdin, and the curves are given in Fig. 9-3. We see that they
do in fact intersect, not far from the observed pressure where the transition
occurs, and the curve for the NaCl structure lies lower at low pressure,
while that for the CsCl structure is lower at high pressure. In other
words, the theory is capable of explaining the phase transition, as well as
the properties of each individual phase. We can see from the figure that
230 INSULATORS, SEMICONDUCTORS, AND METALS [Chap. 9
a very small modification of the energy of one of the phases with respect
to the other would cause the intersection of the free-energy curves to shift
to the observed value.
Lowdin not only considered the uniform compression of the crystal, as
in Fig. 9-3, but also other types of distortion, such as shear. He found
the change of energy produced by these strains, and from this information
was able to deduce the elastic constants. In this connection, he discussed
a point which has received a great deal of attention. It can be shown
that a general cubic crystal possesses three independent elastic constants,
cu, c12, and C44. We shall not go into the theory of elasticity to define
these constants, but refer the reader to Lowdin's papers, or to references
given there, for such a treatment. The point, however, is that it was
shown many years ago that a crystal in which the interatomic forces were
of the type assumed by Born and Lande, namely, attractions or repulsions
between pairs of atoms, which were functions only of the distances between
the two atoms, had a special property; it was necessary in such a crystal
that c12 = C44. It had been known experimentally for some time that
this relationship did not hold for the alkali halides. Lowdin found that
in his treatment of elasticity, the relation c12 = C44 did not have to hold
in the quantum theory, and in fact the three elastic constants which he
found agreed rather well with the experimental values. Thus it is clear
that one can get a good treatment of elasticity in general from the wave-
mechanical model, not merely of the compressibility.
Finally Lowdin investigated the cohesive energy of the alkali halides,
namely, the total energy of the crystal at the equilibrium distance, minus
the energy of the separated ions. He found this by separate calcula-
tions of both cases. The results could be compared with experiment in
several cases, notably LiCI, NaCl, and KCl, and the calculated values
agreed with the observed values within 1 or 2 percent. This shows very
fine agreement, though we must remember, as has been pointed out
earlier, that the major part of the cohesive energy in these cases comes
from the electrostatic energy, and the cohesive energy as computed in
this way is much larger than the energy difference between the equilibrium
configuration and the state of the separated atoms, rather than ions.
The general conclusion of this discussion is that Lowdir{'s calculations
showed remarkable agreement with experiment. Nevertheless we must
realize that there are a number of points in which the calculations could
be improved. In the first place, the atomic orbitals used in the calcula-
tion were taken from the calculations of isolated ions, and were not modi-
fied as the ions ,vere brought together to form the crystal. We know
now from recent molecular calculations that such modification is of con-
siderable importance, and really should be included for an accurate result.
It will be much less important in an alkali halide crystal than in a crystal
Sec. 9-6] THE LATTICE ENERGY OF IONIC CRYSTALS 23l
with covalent binding, since there is much less overlapping between the
atoms in the ionic case, but nevertheless one should really include some
variable parameters in the description of the atomic orbitals, and should
determine these parameters by variational methods at each interatomic
distance. By so doing one would approach self-consistency.
Next, we know that configuration interaction is necessary in order to
get a really good agreement with experiment. As we have pointed out
earlier, this is less important for an alkali halide crystal than for a covalent
case, but still it should be considered. Specifically, the extreme ionic
picture which is represented in the single determinant used by Li:iwdin
certainly overemphasizes the ionic nature of the crystal. In our discussion
of the LiH molecule in Volume 1, Sec. 7-2, we have seen that for that case
we need not only an ionic basis function, but also covalent types of basis
functions, in order to get a good description of the molecule. The LiH
case undoubtedly has much more covalent character than an alkali halide
crystal would have, but this still suggests that a linear combination of
determinantal functions would give a better description of the alkali halide
crystal than the single determinant used by Li:iwdin. In particular, if a
sufficiently complicated configuration interaction were used, we should
find that the curve of energy versus the constant a would go from the
ground state at the equilibrium distance, not to an ionic state at infinite a,
but to the state of separated neutral atoms. It is likely, however, that the
change from a typically ionic type of wave function, which we presumably
have at small distances, to the atomic type at large distances, would occur
rather suddenly at values of a considerably greater than the equilibrium
distance, unlike the case of LiH, where there was a gradual change over
the whole range of internuclear distances considered.
In spite of these misgivings about the results of Lowdin's calculations,
they remain a landmark in the development of the theory of the cohesive
energy of crystals. Very few ionic crystals have yet been investigated in
anything nearly approaching the same detail. Lundqvist1 has studied
LiH in approximately the same detail, going somewhat beyond Li:iwdin's
methods in that he has investigated the effect of varying the atomic
orbital of the hydrogen atom. Y amashita 2 has calculated the lattice
energy of LiF, to approximately the same accuracy. Howland 3 has car-
ried through a calculation of KCl similar to that of Lowdin, in connection
with a study of the energy bands of that crystal. C. M. Sonnenschein
(unpublished) has made a calculation of the binding energy of the MnO
crystal, by methods as accurate as those of Lowdin, getting a very satis-
factory result. P. De Cicco (unpublished) has calculated the binding
1 S. 0. Lundqvist, Arkiv Fysik, 8:177 (1954).
2 J. Yamashita, J. Phys. Soc. Japan, 7 :284 (1952).
3 L. P. Howland, Phys. Rev., 109 :1927 (1958).
232 INSULATORS, SEMICONDUCTORS, AND METALS [Chap. 9
Let us now assume that we have a potential V(r), where r is the vector
position. We shall choose the zero of energy to equal the Fermi energy.
At any point, then, the lowest possible energy of an electron is - eV, the
potential energy, and we can have any higher value of energy by adding
an arbitrary amount of kinetic energy. The assumption of Thomas and
Fermi was that the electron gas at a given point of space behaved like a
free-electron gas, and that the maximum possible kinetic energy was that
which would bring the total energy up to the Fermi energy of zero. In
the derivation of Eq. (1-12), it was of course assumed that the potential
energy was zero, and E F referred to the maximum kinetic energy of the
electron. In the present case, we should assume that this maximum
kinetic energy plus the potential energy ( - e V) equaled the Fermi energy
(zero), or maximum kinetic energy = eV. In other words, we assume
particularly the hook by P. Gombas, "Die statistische Theorie des Atoms und ihre
Anwendungen," Springer-Verlag OHO, Vienna, 1949. Papers dealing with the
method are included in the Bibliography at the end of the present volume, under the
following authors:
that the charge density is related to the potential by the equation derived
from Eq. (10-2),
1
p = -e%,r(2me V)¾ h 3 (10-3)
(10-4)
He investigated the total energy of the crystal, and found how it varied
with interatomic spacing, assuming first that the ions were brought
together rigidly in the crystal, without change of their charge densities,
though later he considered their mutual polarization. It is not hard to
find the total energy of the crystal, in this type of approximation. In a
given element of volume, we know the potential by solution of Eq. (10-4),
and the charge density from Eq. (10-3). Consequently the potential
energy of the charge within this volume element can be found, and simi-
larly we find the potential energy of the nuclei in the field of electrons and
other nuclei. As for the kinetic energy, this is assumed to be the same at
a given point of space as the kinetic energy of a corresponding Fermi gas
having the same maximum kinetic energy. It is very simple to prove that
the electrons in a Fermi gas, at the absolute zero, have an average kinetic
energy which is three-fifths of the Fermi energy, where for the moment we
assume the case of zero potential energy, so that we can find the kinetic
energy. In the work of Jensen, the total energy was found to have a
minimum, at an internuclear spacing which formed a fairly good approxi-
mation to the observed internuclear distance in the actual crystal.
Lenz and Jensen discussed not only the total energy, but also the kinetic
and potential energies separately, which of course they could compute.
It is known 1 that the kinetic and potential energies in the Thomas-Fermi
approximation satisfy the virial theorem. In Appendix 6 we show that
the form taken by the virial theorem for a solid under hydrostatic pressure
lS
where pis the pressure, v the volume. This is a relation similar to Volume
1, Eq. (2-40), which holds for a molecule. As in the case of the molecule,
we find at infinite interatomic separation, and also at the equilibrium
separation, where the pressure is zero, that the kinetic energy is - 3--1 times
the potential energy. Hence the decrease of total energy as the atoms or
ions are bound into the crystal is made up of a decrease of potential
energy which is twice as great, and an increase of kinetic energy equal to
the decrease of total energy. The general behavior of the kinetic and
potential energies, as functions of the volume, is entirely similar to what
we have discussed in Volume 1, Sec. 2-5, in connection with diatomic
molecules. The case of an ionic crystal is one in which, as the atoms are
brought together from infinite separation, the kinetic energy increases
continuously, the potential energy decreases continuously, while the total
energy shows a minimum at equilibrium. As the crystal is compressed
to a smaller volume than the equilibrium volume, the repulsive part of the
total energy arises because the kinetic energy is increasing faster than the
potential energy decreases. These features were found in the case exam-
ined by Jensen, and were later discussed along similar lines by Hellmann
(Zoe. cit.).
Following this work of Lenz and Jensen on ionic crystals, the present
author and Krutter 1 applied the method to metals, using the cellular
method. They replaced the Wigner-Seitz cell of an alkali metal by a
sphere of the same volume, as Wigner and Seitz had done in their dis-
cussion of sodium. The Thomas-Fermi equation, Eq. (10-4), then has
spherical symmetry, as for an isolated atom, but the boundary conditions
are different. As with the atom, the potential should reduce to that of
the nucleus at small values of r. The difference comes at large values of r.
We do not care about the solution as r becomes infinite. However, at the
surface of the Wigner-Seitz sphere, the value of dV /dr should be zero.
This is the electric field, and if the sphere is electrically neutral, as it must
be, there will be no field at the surface. In the work cited above, a
family of curves of V versus r was computed numerically, satisfying Eq.
(10-4), and having zero slope at different values of the radius. Thus
solutions were found for a variety of Wigner-Seitz spheres, or for different
volumes of the metal.
When the total energy was computed as a function of the volume of the
metal, no minimum was found. The energy increased continuously as
the volume decreased, the increase of kinetic energy more than balancing
the decrease of potential energy. It was later proved analytically by
Feinberg 2 that this had to be the case. The attraction found for the ionic
crystal by Jensen arose from the attraction between the oppositely charged
ions, which was missing in the metallic case. Hence an external pressure
would be required to keep the metal in equilibrium, which can be com-
puted at once from the relation p = -dE/dv, where v is the volume.
Similar but more elaborate treatments since the time of the work dis-
cussed above have been used to find the equation of state of metals at
very high pressures.
The calculation which we have been describing is deficient in a very
serious way: it takes no account of the exchange energy, or of correlation.
It assumes that an electron is acted on by the potential of the nuclei and
of all electrons, including itself. The next step in improving the method,
a step which was actually taken in some of the papers cited above, is to
put in a correction describing the exchange, and this will be discussed in
the next section.
1 J. C. Slater and H. M. Krutter, Phys. Rev., 47 :559 (1935). See also J. C. Slater,
Rev. Mod. Phys., 6:209 (1934).
2 E. L. Feinberg, Physik Z. Sowjetunion, 8:416 (1935).
238 INSULATORS, SEMICONDUCTORS, AND METALS [Chap. 10
+ 4e 2
"ll"Eo
["
~
(j) Juf(2) _!_ u;(2) dv2] ¼(l)
T12
2
- 4e ' \ ' (j) [
"ll"Eo ~
Ju;*(2) _!_ u;(2) dv2 u;(l)] = E;u;(l)
r12
(10-6)
as given in Volume 1, Eq. (5-1), except that in that case the equation is
expressed in atomic units. The quantity u.(l) is one of the spin-orbitals.
The first two terms represent the kinetic energy operating on this spin-
orbital, and the potential energy of all nuclei, where Za is the nuclear
charge, in units of the electronic charge, r 1a is the distance from the 1st
electron to the ath nucleus. Next we have the Coulomb interaction
between the ith electron, and all electrons, including itself (since the
summation over j includes the case j = i). The last term on the left
side of the equation is the exchange term.
1 F. Bloch, Z. Physik, 67 :545 (1929). P. A. M. Dirac, Proc. Cambridge Phil. Soc.,
26 :376 (1930). E. Wigner and F. Seitz, Phys. Rev., 43 :804 (1933). L. Brillouin,
L' Atome de Thomas-Fermi, Actualites Sci. et Ind., no. 160, 1934.
Sec. 10-2] WIGNER-SEITZ METHOD,-AND COHESIVE ENERGY OF METALS 239
In the case of the free-electron gas, where the u/s and u/s are plane
waves, it is shown in the appendix quoted above that one can compute
explicitly the exchange term in Eq. (10-6). One can write the last term
on the left side of Eq. (10-6) in the form u;(l) times an exchange potential
energy, the latter being given by
Exchange potential energy = - -4e 4 ( -83 -
7Ho 7r V
2 N)h F(,,,) (10-7)
Herek is the wave vector of the orbital u; in Eq. (10-6), and kmax is the
value of lkl associated with the Fermi level. We can get at it, from Eq.
(1-12), by setting
EF = k~ax Ji,2 (10-9)
2m
where m is the electronic mass, and where Eq. (10-9) gives the kinetic
energy of a free electron. The function F(71) is given by
F(71) = !2 + 1 471
- 712 ln 1 + 71
1 - T/
(10-10)
0.9
0.8
0.7
0.6
Fw. 10-1. Function F(TJ) of Eq. (10-1()), giving relative exchange energy in free-
electron gas, as function of 7/, ratio of momentum to momentum at Fermi surface.
appendix 22 of that work, we note that F(71) goes from unity when T/ = 0,
for an electron of zero kinetic energy, to :!,,i when 11 = 1, at the top of the
Fermi distribution.
We see, then, that the exchange term is a function of the wave vector
or energy of the electron which we are considering. For setting up the
240 INSULATORS, SEMICONDUCTORS, AND METALS [Chap. 10
!!!_ (i_
N)% - eV - _!:_ 2
2m 81r v 41rEo
N )~3 = 0
81r v
(i_ (10-11)
- -e
2
471'",Eo
fl (a)---dv1
Za N(l)
r1a 1J
(10-15)
This is the energy expression used by Lenz and Jensen, and Slater and
Krutter, in the papers mentioned earlier. The first term is the kinetic
energy, the second the interaction between electrons and nuclei, the third
the Coulomb interaction between electrons, including the interaction of
electrons with themselves, and the fourth is the exchange correction. The
last term is the interaction energy between pairs of nuclei. We shall
later discuss the results of energy calculation by this method. Before
doing so, however, let us follow Lenz and Jensen in showing that the
Thomas-Fermi-Dirac equation can be derived from this equation by varia-
tion of the electron density, N /v. To do this, we shall find the variation•.
of the energy expression, when N is varied. Since the total number of
electrons must remain fixed, we use the method of undetermined multi-
pliers, and set the variation of the energy, plus a constant times the
variation of the quantity J(N /v) dv, equal to zero.
We then find the following result, in which the only point of any com-
242 INSULATORS, SEMICONDUCTORS, AND METALS [Chap. 10
(10-19)
As usual in such problems, we set the expression multiplying o(N /v) under
the integral sign equal to zero. The constant which appears is merely an
additive constant in the energy, which can be chosen in any arbitrary
way; the choice which we have been using in our discussion is to set it
equal to zero. Hence we are left with the result
which is the ordinary electrostatic potential arising from the nuclei and
all electrons, we see that Eq. (10-20) is identical with Eq. (10-11), which
we have used in deriving the Thomas-Fermi-Dirac equation, Eq. (10-14).
Hence we verify our statement that this equation can be derived from an
ordinary variation principle: the particular charge density, or alternatively
the particular potential, which will minimize the total energy, including
exchange, as given in Eq. (10-18), is the one which will satisfy the TFD
equation.
There is one important point connected with this result, which we shall
notice again, and which is sometimes overlooked. In Eq. (10-20), we
have a relation equivalent to a one-electron Schrodinger equation, such
,as Eq. (10-6). We recognize in Eq. (10-20) the kinetic energy term,
treated according to the free-electron picture rather than according to
wavP mechanics; the two terms in the Coulomb potential, the first arising
from the nuclei, the second from all electrons; and the exchange term.
However, the exchange term in Eq. (10-20) is not what we should at first
expect it to be. We have stated in Eq. (10-7) that the exchange potential
Sec. 10-2] WIGNER-SEITZ METHOD, AND COHESIVE ENERGY OF METALS 243
'E. Vl'ignP-r and F. Seitz, T'h:,;s. Rev., 43 :804 (1933), 46 :.509 (1934). E. Wigner,
Phys. Rev., 46:1002 (1934); Trans. Faraday Soc., 34:678 (1938). We shall refer to
these papers as J, II, III, IV, respectively. The calculations are summarized in F.
Seitz, "The Modern Theory of Solids," McGraw-Hill Book Company, New York,
1940, particularly secs. 77-84.
Sec. 10-3] WIGNER-SEITZ METHOD, AND COHESIVE ENERGY OF METALS . 245
8-3, where it forms the bottom of the 3s energy band. They assumed that
the energy terms involving the core electrons (ls, 2s, 2p for sodium) would
be the same in the crystal as in isolated atoms, so that they could be
disregarded. Then they considered that to find the energy of the whole
crystal as a function of r,, they first had to take this one-electron energy,
Eo, as a function of r,, multiply it by the number of atoms, and then make
a number of corrections.
First, the wave function in question, which joins periodically onto its
neighbors in each unit cell, represents the bottom of the Fermi distribu-
tion. We must then add a correction term for the mean kinetic energy of
an electron in the Fermi distribution. This, from Eq. (10-18), is
Average KE= - h
-(- 3 3)% (N)~
5 2m
2
81r
-
V
1
(10-23)
If we wish to express it in terms of r,, we have the relation that the number
of electrons in a sphere of radius r, is unity; that is,
(10-24)
so that
Average KE = -3 -h
2
5 2m
(
-3
81r
)% (-41r3 )% -r;1
9h 2 ( 3 )H•l (10-25)
= 801rm 21r ~
If we express the radius r, in terms of the atomic radius, ao, and the energy
in Rydbergs, we find ·
Average KE = i~ ( 2: y 1
(r,/~o) 2 Rydbergs
2.21 Ry
(10-26)
(r./ao) 2
If we multiply this average kinetic energy per electron, by the number of
electrons per unit volume, N /v, we get the kinetic energy per unit volume,
to be added to N /v times E 0 •
We are assuming that E 0 includes the complete energy, kinetic plus
potential, of the conduction electron in the Wigner-Seitz sphere. This
does not include, however, any correction on account of the interaction
between the various conduction electrons in the crystal. If we accept
the approximation literally that a single atom is enclosed in a sphere with
impenetraolc walls, each sphere will eontain a single conduction electron,
and they cannot interact with each other. In the real crystal, however,
there are no such walls, and each electron can wander freely throughout the
crystal, so that electrons can interact with each other. The wave func-
,,
~
~
l
1
j
246 INSULATORS, SEMICONDUCTORS, AND METALS [Chap. 10
i
tions of the conduction electrons were found to be close to plane waves,
as we have indicated before. Hence it seemed to be a reasonable approxi-
mation to treat the interaction of the electrons as if they constituted a
free-electron gas, rather than moving in the field of the positive Na+ ions
located at the points of a body-centered cubic lattice. To make the
crystal electrically neutral, of course the electronic gas, of density equal
to one electron in a sphere of volume % 1rr!, would have to be balanced by
a positive charge distribution. Wigner and Seitz assumed, in treating
electron interaction, that this positive charge could be assumed to be
uniformly distributed over the volume. Hence they considered a free-
electron gas, in which the positive and negative charge distributions would
exactly cancel, so that the electric field would be everywhere zero, and
the exact solution of the Hartree-Fock equations would be a plane wave,
resulting in the self-consistent situation that each of these plane waves
leads to a charge distribution independent of position, so that the total
charge density would be ptecisely zero everywhere.
This is the case for which the free-electron exchange calculation holds.
Consequently they assumed that each electron would be surrounded by a
Fermi hole, as discussed in "Quantum Theory of Atomic Structure"
(quoted above), appendix 22. The total exchange potential energy is
found as the product of the number of electrons per unit volume, times an
average exchange energy found from Eq. (10-17), equal to
(10-27)
papers cited above, and show that this simple wave function yields a large
fraction of the correlation energy. It can be easily shown to reduce to the
proper behavior of neutral atoms at large internuclear separation.
The particular wave function we have described above is not an
eigenfunction of the spin operator; while it diagol!.alizes the z component
of spin, S,, it does not diagonalize the operator S 2 , and hence does not
correspond to a singlet state. Li:iwdin, Pauncz, and de Heer, in the
papers cited, show however that one can use a projection operator to find
a singlet from the single determinant we have described. Furthermore,
Li:iwdin has shown that the energy of the singlet state approaches that of
the single determinant as the number of electrons in the system increases
without limit. Thus the simple calculation described above can be
justified for the crystal, though it must be modified for the benzene
molecule, or similar finite systems. We shall have more to say regarding
the nature of the wave function in the next section.
Calais, in the papers cited earlier, has applied this method to the
metallic form of hydrogen. This hypothetical form of hydrogen has been
studied by a number of writers, 1 who have concluded that at a high
pressure of a good many hundred thousand atmospheres, a body-centered
cubic metallic modification of hydrogen should be more stable than the
ordinary crystal formed of diatomic molecules. Experimental evidence
has been found by Alder and Christian 2 of an actual transition from the
diatomic form to a metallic form in the somewhat similar case of iodine.
The results which Calais finds agree fairly well with those of Wigner and
Huntington, obtained by the cellular method. This case of hydrogen was
undertaken only partly for its own interest, but partly also as a simplified
version of the problem which one will meet with an alkali metal. It is
hoped that with the further development of the method, theoretical results
will soon be available for alkalies, leading to a treatment of correlation
which should be a good deal more reliable than that which we discussed
in Sec. 10-3.
This is a good point to break in with a listing of authors of papers on
cohesive energy of ionic crystals and metals, which will be found in the
Bibliography at the end of this volume. Papers bearing on this subject,
or some aspect of it, will be found by the following:
we must ask what is the most practical way to get a good approximation.
The discussions of cohesive energy of ionic crystals and of metals in the
two preceding chapters have endeavored to treat this problem. We have
pointed out shortcomings in some of the current methods of handling
metals, though these shortcomings do not come into the problem of the
ionic crystals. The distinction between the two cases goes back to a
corresponding situation in molecules. Our treatments in general start
with something like a Hartree-Fock treatment, and then proceed to
correct this. We recall, from Volume 1, that for a system consisting of
closed-shell atoms or ions, such as a pair of helium atoms, the Hartree-
Fock method is fairly accurate. On the other hand, for a covalently
bonded system, like the H2 molecule or a metal, or a covalent crystal such
as diamond, we know that the Hartree-Fock single-determinant solution
reduces to the wrong behavior at large internuclear distance, which means
that configuration interaction, or other equivalent methods of handling
correlation, are much more essential than with the ionic crystals. We
have mentioned the method of alternant molecular orbitals for a metallic
case such as an alkali metal. For a covalent crystal such as diamond,
we must expect to use an equivalent of the Hurley, Lennard-Jones, and
Pople treatment1 of covalent bonds, which we have discussed extensively
in Volume 1 in its application to molecules. There is a well-known treat-
ment of the diamond crystal by Schmid, 2 using essentially this method,
which is capable of good results. ]\fore recent work by Coulson, Redei,
and Stocker 3 has repeated and extended this work of Schmid, and has
shown that it forms a proper starting point for the cohesive energy of a
covalent crystal. We have taken up this approach in Volume 2, Sec. 10-4
and Appendix 8.
The other type of problem which we meet deals with the excited states
of a crystal. There are many different types of problem all of which
require these excited states. The first and most obvious one is that of
optical excitation. If we go from the ground state to an excited state
by absorption of radiation, we need the energy differences between the
two states. But many other uses of the excited states are encountered.
For instance, in the study of specific heat of solids, we must distribute
different systems through their various possible excited states, according
to the Boltzmann factors exp - energy/kT, where the energy is the
excitation energy from the ground state. By making suitable averages
3 C. A. Coulson, L. B. Redei, and D. Stocker, Proc. Roy. Soc. (London), A270 :357,
over these excited states, one finds the internal energy, free energy, and
other thermodynamic quantities involved in the thermal properties of
the substance. Again, magnetic problems involve these excited states,
particularly those having magnetic excitations, so that their energies
are affected by the presence of an external magnetic field. These and
other phenomena depending on the excitation are so important that in
fact many more problems involve the excited states than the ground
state.
We need not only the states with electronic excitation, but also those
with excitation of the vibrational motion of the nuclear system. These
vibrations come in, of course, in considering the lattice specific heat.
They come in also in almost all other types of phenomena. For instance,
as we have seen in Chap. 1, the problem of electrical conductivity brings
in the vibrational motion in an absolutely essential way: the scattering
of the electron waves by lattice vibrations is the main mechanism of
electrical resistance. Again, in optical absorption, we can excite the
lattice vibrations, and their quanta of energy or phonons, along with
excitation of the electrons. In almost all these cases, it is the coupling
between the electronic and the nuclear motion that is essential. This
coupling is neglected in the Born-Oppenheimer approximation. It arises
from the Rmall terms in the Hamiltonian involving both nuclear and
electronic coordinates, which are neglected in the derivation of the Born-
Oppenheimer approximation; they are given in Volume 1, Appendix 2.
These couplings are essential not only in many solid-state problems, but
also in molecular problems involving the interaction of electronic and
nuclear vibrational states, interactions usually denoted by the name
vibronic.
The excited electronic states of a crystal are sometimes simple, but
sometimes very complex. This complexity is seen in such cases as the
optical properties of a crystal containing rare earth ions. Here the 4f
electrons of the ions are so well protected by the remainder of the atom
that their interactions, resulting in the spectrum of the ions, are
much as in isolated ions, and there is a far-reaching similarity between
the spectra of these ions in crystals, and of the free ions. We meet con-
nections here with the multiplet theory of atoms, as handled in "Quantum
Theory of Atomic Structure." There are modifications, however, on
account of the crystalline environment, resulting in the behavior known
by the name of ligand field phenomena.
Here we see only a few of the many types of problems depending on the
excited st.ateR of a crystal. These are so much more extensive than those
which can be handled by the one-electron approximation that they will
occupy us for the larger part of the remaining volume in this series. The
reader of the present volume, then, cannot expect more at this point than
Sec. 11-2] THE CRYSTAL AS A MANY-BODY PROBLEM 259
m =0 - 2.882690 Rydbergs
m = ±1 -1.738612
m = ±2 0.378952
m =3 3.808346 (11-1)
the neighborhood of the Fermi level, where the slope of the curve of F(71)
becomes vertical. In Fig. 11-1 we show the density of states for free
electrons with this exchange correction, as derived by Raimes. 1 This
density, instead of being proportional to the square root of the energy, as
would be the situation for free electrons without exchange according to
Eq. (1-13), dips down to zero at the Fermi level.
This is clearly contrary to experiment. We have pointed out in Eq.
(1-14) that the thermal energy of the electrons is proportional to the
density of states at the Fermi level. If we had the density of states given
in Fig. 11-1, the heat capacity should be far less than for the free-electron
gas without exchange. The latter model, however, leads to values of
Energy
Frn. 11-1. Density of states in free-electron gas. [From Raimes, Repts. Progr. in
Phys., 20:1 (1957).) Upper curve, Sommerfeld theory. Lowercurve, Hartree-Fock
theory, assuming an exchange energy as given in Eq. (10-7), depending on the
momentum. Experimentally, the Sommerfeld model is much closer to the truth than
the Hartree-Fock.
Since there are in fact N - 1 electrons aside from the first, the total
charge density at position 2 will be proportional to
This charge density of other electrons will be bound to show the various
polarization effects which we have been discussing in preceding para-
graphs, since we are assuming that iJ, is the true wave function of the
problem. Let us then find the potential, at point x1, arising from the
nuclei, and this electronic charge density, which depends parametrically
on x 1• It will give a potential which will depend on the position of the
first electron only, not on its momentum or k vector, and hence will not
lead to the paradoxical k dependence which we found arising from the
Hartree-Fock potential. Furthermore, it will take account of the polariza-
tion effects which we have been describing above.
It seems as if the potential set up in this way would be much more
satisfactory than the Hartree-Fock potential for obtaining one-electron
wave functions and energies for discussion of the problem of a solid by the
Fermi statistics. This potential was suggested some time ago by the
present author 1 as a rather ideal type of self-consistent-field potential.
A similar idea had, as a matter of fact, been used much earlier 2 in a dis-
cussion of the helium atom, before the self-consistent-field method had
been proposed. One electron was assumed to be held at a given distance
from the nucleus, and the motion of the other electron was investigated,
in the field of this fixed electron and of the nucleus. This problem can be
solved exactly, by the same methods used for the H-; problem. The result
was an energy depending on the position of the first electron, which then
was used as a potential for a central-field problem. The energy of the
ground state of this one-electron central-field problem formed a fairly
good approximation to the negative of the ionization potential of one of
the electrons in the ground state of the helium atom.
A similar argument was used by Wigner, 3 in his discussion of correlation
in a metal. He assumed the electrons of one spin to be held fixed, and
those of the opposite spin to move among them, being repelled by them.
It was by a development of this picture that he arrived at the high-density
limit of the expression for correlation energy which we quoted in Eq.
(10-29).
The self-consistent potential which we have described in this section is
not very different from the Hartree-Fock potential, and the orbitals
1 J. C. Slater, Phys. Rev., 91 :528 (1953).
2 J. C. Slater, Proc. Natl. Acad. Sci. U.S., 13:423 (1927).
3 E. Wigner and F. Seitz, Phys. Rev., 46 :509 (1934). E. Wigner, Phys. Rev.,
46 :1002 (1934).
Sec. 11-4] THE CRYSTAL AS A MANY-BODY PROBLEM 269
derived from it will not be very different either. Lowdin 1 has discussed
the resulting orbitals. He has shown that they are similar to the orbitals
which he has named the natural spin-orbitals. These natural· spin-
orbitals· are defined as follows: We start with an arbitrary complete set
of orthonormal one-electron spin-orbitals, U;(x 1 • • • XN), for an N-elec-
tron system, where the x's include spin as well as coordinates. We form
all possible determinantal functions from these spin-orbitals, by choosing
any N of them to be occupied by the electrons. The true wave function
can be written exactly as a linear combination of this infinite number of
determinantal functions. From this wave function i/1 we set up the -
so-called first-order density matrix,
(11-3)
giving the density of particle 1. It is easy to show that this quantity can
be written as
(11-4)
where the C,; form a set of matrix components, which depend on the par-
ticular set of u/s which we have used. If a unitary transformation of the
u/s is made, the C,/s undergo a similarity transformation. This unitary
transformation can be made in such a way that C,; is transformed to a
diagonal form. When this is done, the resulting spin-orbitals are called
the natural spin-orbitals.
Low din, in the references given above, has demonstrated a number of
properties of the natural spin-orbitals. In the first place, he considers the
expansion of the wave function i/1 as a series of determinantal functions
made from the u/s. Ordinarily, this function will consist mostly of one
determinantal function, plus small coefficients times others. He has
shown that the resulting series converges more rapidly if the natural spin-
orbitals are used, than with any other spin-orbitals. This is not just the
same criterion as the Hartree-Fock criterion, which demands that the
energy of a single determinantal function should be lower than for any
determinant formed from other spin-orbitals. It is natural, then, that it
results in slightly different spin-orbitals. A great deal of study has been
made of natural spin-orbitals 2 in various simple cases, and it has been
found that they are very similar to the Hartree-Fock spin-orbitals, but
not identical.
Lowdin next has investigated the conditions which the natural spin-
orbitals must satisfy, similar to the Hartree-Fock equations. He has
shown that they do not satisfy precisely a Schrodinger equation for
1 P. 0. Lowdin, Phys. Rev., 97 :1474, 1490, 1509 (1955); Svensk Kem. Tidskr.,
account of them, the single excited energy level which we should find
with only one ion excited will be broadened into a band of energies, called
an exciton band. One can show that a system in one of the energy levels
of one of these bands will correspond to a transfer of the excitation
through the crystal, moving slowly from one atom to another. It will
travel more slowly, the narrower the original energy band for the 4f
electrons.
When one has a situation such as this, an additional feature is likely
to come in, which will make the drifting of the excitation through the
crystal much slower than one would otherwise think. The electronic
structure of an excited ion will be somewhat different from that of an
ion in its ground state, and it will presumably exert somewhat different
forces on the surrounding ions. Hence if a single ion were excited, there
would be forces on the surrounding ions tending to make them move
away from or toward the excited ion. In other words, their equilibrium
positions will have been modified. If now this excitation is to move
through the crystal, it will have to carry with it a motion of the nuclei
as well as the electrons. This will slow down the motion so much that
the excitation may well be stabilized essentially on one ion.
Situations similar to this are even more likely when we have ionization
rather than excitation of an ion. If an electron is removed from one
ion, and is lodged on another, we have· one ion with an extra positive
charge, another with an extra negative charge. It will require the expen-
diture of Coulomb energy to pull these opposite charges apart, so that
the two ions will tend to remain on nearby ionic sites. The· charges
present will make considerable modifications in the forces on other
neighboring atoms; and will cause them to move around, again stabilizing
the ions in their positions, since moving the ionization from one site to
another would require actual nuclear motion. From consideration of
such cases we arrive at the notion of the polaron, a localized configuration
of ions of the general type we have described.
These cases, and many more, illustrate the complication which arises
when We wish to describe the multiplet structure of excited states in
detail. Similar situations come up in magnetic problems. If we have
several electrons missing from the 3d shell of a transition element such
as iron or cobalt, we know that the isolated ion would tend to have its
electron spins arranged so as to give the maximum multiplicity, as given
by Hund's rule. The energy separation between the different multiplets
is in this case of the same order of magnitude as the width of the energy
bands of the 3d electrons. In this case, then, it is not clear whether to
set up W annier functions first, solve the multiplet problem for the indi-
vidual ions, and then take account of their interactions, or to proceed
in the opposite order, first setting up the energy bands for the single-
274 INSULATORS, SEMICONDUCTORS, AND METALS [Chap. 11
We have shown in Sec. 5-2, by entirely classical means, that the electric
field arising from a sinusoidal perturbation of density like a sound wave
leads to a restoring force proportional to the density perturbation, and
hence it results in a sinusoidal oscillation of charge. The resulting fre-
quency, the plasma frequency, depends on the density of electronic charge.
It lies in the ultraviolet part of the spectrum if the electrons are as dense
as in a metal, but in the infrared for a semiconductor. Bohm and Pines
have assumed that these oscillations, in the quantum case, should be
quantized, so that the plasma can absorb quanta, now called plasmons,
whose energy is h times the plasma frequency. As we have mentioned in
Sec. 5-2, a great deal of experimental evidence has built up that electrons
traveling through a metal can in fact lose energy inelastically to these
plasmons, and measurements of the energy loss check with the computed
plasma frequency.
It seems plausible, then, to describe the motion of the electrons in terms
of the resulting density waves. One can set up density waves of different
wave vectors, and can show that the energy of the plasmons, as a function
of wave vector, is not strictly constant, but depends on k. If we had
such density waves with all wave vectors in a Brillouin zone, their
amplitudes would form coordinates which could describe the electronic
positions, and we could describe the state of the electron gas in terms of the
amplitudes of the waves, rather than in terms of ordinary electron coor-
dinates. It proves, however, more useful to use density waves only with
quite long wavelengths, and to describe the electronic coordinates in the
usual way. Thus we are led to more coordinates for description of the
electrons than one needs, and the theory devotes considerable discussion
to this apparent difficulty.
We have mentioned that the plasma frequencies for a metal are in the
ultraviolet. Hence at ordinary temperatures the plasmons will not be
excited. Under these circumstances, Bohm and Pines have shown that
the electrons will have their behavior modified. They do not appear to
interact according to the Coulomb law, but rather with a screened Coulomb
potential, like (exp -ar)/r, where a is a constant such that the potential
falls off exponentially in a distance comparable with an interatomic dis-
tance. When one replaces the Coulomb law with this type of law, in a cal-
culation of the exchange interaction, it proves to be the case that the large
dependence of exchange energy on k, which we have pointed out in Sec.
11-3, as a difficulty with the Hartree-Fock method, almost disappears.
The treatment given by Bohm .and Pines plays the role of an approxi-
mate treatment of correlation, and what they find is that the correlation
correction largely cancels the k dependence of the energy.
Various other lines of approach have been used in connection with the
Sec. 11-6] THE CRYSTAL AS A MANY-BODY PROBLEM 277
( - :~ v 2 + V) u = Eu (Al-1)
for the nth energy band, where wn(k,r) satisfies a condition like Eq.
(Al-2), showing that it is also a periodic function repeating in each unit
cell. We shall assume that the wave of Eq. (Al-3), having the reduced
wave vector k, has the energy En(k), corresponding to the nth band.
We now wish to find the average value of the velocity operator for the
wave function in question, and show that it is given by the equation
(Al-4)
(Al-5)
We also find that
f u!(k,r)v'un(k,r) dv = i'k + f w!(k,r)v'wn(k,r) dv (Al-6)
where the integration is over the volume over which the wave function
is normalized. Now we operate on Eq. (Al-5) with the operator v'k,
which involves differentiations with respect to k., k11 , k., so that it differ-
entiates wn(k,r), En(k), k, and k 2. We multiply the result by w!(k,r),
and find
+ 2iw:(k,r)Vwn(k,r)
+ [!7 VkEn(k) - 2k] w:(k,r)wn(k,r) = 0 (Al-7)
- li. 2k 2
2m
- v]} *w*(k r) dv
n '
(Al-8)
We integrate the left side by parts, or take advantage of the fact that
iv' is a Hermitian operator, and transform this equation into
The expression on the left is the average velocity (see for instance J. C.
Slater, "Quantum Theory of Atomic Structure," vol. 1, McGraw-Hill
Book Company, 1960, p. 105). Hence we have proved Eq. (Al-4), as
we proposed to do. Our proof, in the form in which we have given it,
holds only in the absence of a magnetic field, since we have not included
a vector potential term either in Schrodinger's equation or in the velocity
operator.
We have found the average velocity for a Bloch wave of the form given
in Eq. (Al-3). We can, however, superpose many such Bloch waves,
corresponding to neighboring k values, and to the same energy band, and
build up a wave packet. The average velocity of this wave packet can
be found as a weighted mean of those associated with the various Bloch
waves in it, since we can easily prove that there are no nondiagonal
matrix elements of the velocity between waves of different k values.
Since all the Bloch waves have nearly the same velocity, this value will
be found for the wave packet as well. This then leads to the value of
Eq. (Al-4) as the average velocity of a wave packet formed from Bloch
waves whose wave vectors are all close to the value k.
Al-2. Acceleration of a Wave Packet in an External Applied Field.
In the preceding section we have found the velocity of a wave packet
in a periodic potential, without applied electric or magnetic fields. The
situation will be a steady state, corresponding to a constant energy, con-
stant wave vector, and constant velocity, as for a freely moving particle
in classical mechanics. Now, however, we shall inquire regarding the
effect of an external applied field, both electric and magnetic. We shall
assume that the field is small, so that it can be treated as a perturbation,
and shall handle the magnetic field in a simplified fashion which leads to
the correct first-order effect, though it cannot be justified in higher
approximations; a proper treatment of an applied magnetic field involves
what is called change of gauge, a difficult feature of the theory of the
vector potential and of Schrodinger's equation, which we shall not take
up in detail in the present volume. The simplified method which we
shall use is based on ideas introduced originally by Wannier.
For the present purpose let us expand the wave function as a linear
combination of W annier functions, all from the same band. We recall
from Volume 2, Eq. (6-21), that a solution of Schrodinger's equation of
the form of a single wave of definite wave vector can be written as a
Bloch sum of W annier functions,
(Al-12)
We wish to make a linear combination of a number of un(k,r)'s, with
neighboring values of k, which will be fairly concentrated in space. The
concentration cannot be very great, as we point out in the text, without
284 INSULATORS, SEMICONDUCTORS, AND METALS [App. 1
spreading over too great a region in k space. We can now express the
linear combination of functions of type (Al-12) as a linear combination
of an's, of the form
i'(r,t) = 2:(R;)ir(R;,t)an(r - R;) (Al-13)
Here we have used a time-dependent wave function, since we are irrter-
ested in the motion of the wave packet. The amplitude function i'(R;,t)
will behave like exp (ik • R;) exp [-iE,.(k)t/li], a plane wave of wave
vector k and energy E,.(k), over the region where the wave packet is
located, but will fall off rapidly outside the wave packet; that is, the
space-dependent part will be like exp (ik · R;) times a modulating func-
tion, which is large only inside the wave packet. Since the packet is
supposed to include many atomic sites, the value of k will be fairly well
defined, according to the uncertainty principle, and consequently E,.(k)
may be chosen as the energy of the wave function corresponding to an
average value of k.
We shall now substitute the wave function of Eq. (Al-13) into a per-
turbed Schrodinger equation, including not only the Hamiltonian opera-
tor (H o)op appearing in Eq. (Al-1), expressing the periodic potential
problem, but also a perturbed term (H 1)op, which we shall write later,
and which will include terms arising from external electric and magnetic
fields acting on the wave packet. Schrodinger's equation
(Ho+ H1)opi' = iii air/at
then becomes
Let us now multiply on the left by the conjugate of one of the W annier
functions associated with the nth band, which we are using to construct
the wave packet, namely, a:(r - R;), and integrate over the volume.
We have
interesting form.
The idea behind this method is to take Eq. (Al-17), in which the right
side is expressed as a function of k; to rewrite this in terms of a crystal
momentum p, equal to kh, and then to replace this crystal momentum by
the operator -iliV, which amounts to replacing k by the operator -iV;
and to investigate the effect of this operator on an arbitrary function.
That is, we are interested in the effect of the operator exp ( - R. · V) on an
arbitrary function. It is simpler to take a one-dimensional case, where
the operator is exp ( - X,a /ax); the extension to three dimensions proceeds
simply. If we have exp (-X.a/ax)f(x), we may expand the exponential
. in power series, and find
2
a) f(x) = ( 1 - X, ox
exp ( - X. ax a + 21! X! axa 2 - • • •) f(x)
= f(x - X,) (Al-18)
By using three-dimensional power series, and the three-dimensional form
of Taylor's theorem, we prove in a similar way that
exp (-R, • V)f(r) = f(r - R,) (Al-19)
We now form the operator [En(k)]op, in the way just described, and let
it operate on -.JF(Ri,t). We have
[En(k)]op-.Jl(Ri,t) = 1:(R,)8n(R,) exp (-R. · V)-.JF(Ri,t)
= 1:(R.)8n(R,)-.JF(R; - R,,t)
= ~(R;)8n(R. - R;)-.JF(R;,t)
= ~(R;)-.Jl(R;,t)Ja: (r - Ri)(H 0) 0pa,.(r - R;) dv (Al-20)
where in the summation we have replaced R, by R; - R;. We see, then,
that in the absence of perturbations, or the case H 1 = 0, we could rewrite
Eq. (Al-15) in the form
[E ,. (k)] op -.JF(R-,, t) = 'I,'Ii a-.JF(R;,t)
at (Al-21)
This is like a Schrodinger equation for a wave function -.JF(R,t), where this
function is now regarded as a continuous function of the quantity Ri,
regarded as a variable, and where the operator [En(k)]op is to be con-
sidered as the Hamiltonian operator.
286 INSULATORS, SEMICONDUCTORS, AND METALS (App. 1
(p) '\'
En h = '-' (R.)Sn(R.) exp (-ip •
Ii R,) (Al-22)
at the atomic site R;. In this case Eq. (Al-15) can be rewritten, using
Eq. (Al-22), in the form
[En(-iv') + H1(R;)]'1i(R;,t) = iii a\Jr~~;,t) (Al-24)
or the ordinary Schri:idinger equation for a particle with the tensor form
of effective mass, in the presence of the potential H 1 . This is the approxi-
mation which is used in obtaining the hydrogenic type of wave function
around an impurity, mentioned in Sec. 2-5.
\Ve may now consider how to extend our treatment to a case involving
magnetic fields. As in the case of the electric fields, we shall assume that
the magnetic field is of the macroscopic type, varying only over macro-
scopic distances, and being practically constant over the wave packet.
288 INSULATORS, SEMICONDUCTORS, AND METALS [App. 1
We must first remind the reader of the magnetic terms entering into the
Hamiltonian, and into Schrodinger's equation. (See J. C. Slater, "Quan-
tum Theory of Atomic Structure," vol. 1, McGraw-Hill Book Company,
1960, appendix 4, for a treatment of this method.) We must replace
the ordinary kinetic energy term in the Hamiltonian, p 2 /2m, by the
expression (p + eA)2/2m, where A is the vector potential, -e the charge
of the electron (so that e is a positive quantity). We shall now show that
the corresponding modification of Eq. (Al-24), for the motion of the wave
packet, is to replace En(-iv') by En(-iv' + eA/li), as we might reasonably
expect, since classically we replace p by p eA. +
The fundamental effect of the magnetic field on Schrodinger's equation,
as we have just seen, is to change the kinetic energy term. If we expand
the expression (-ihv' + eA) 2/2m, and assume a potential energy V, as in
Eq. (Al-1), the substitute for that equation becomes
aEn eAx
( okx + aEn eA + aEn eA,) 'l'(R
11 )
h oky h ak, h ,,t
= I (Ri)'l'(Ri,t) Ja!(r - R,) ( - ieh! · ") an(r - Ri) dv (Al-29)
From Eq. (Al-4) we know that the expression (aEn/ak,)/h equals the
x component of the velocity Vn of the wave packet formed from the nth
energy band. Hence the expression on the left side of Eq. (Al-29) equals
(eA · Vn)'l'(R;,t) (Al-30)
We must then show that the right side has the same value. To do this,
we first use Bloch waves, of the form of Eq. (Al-12). For such a Bloch
wave we can find the average velocity by use of Eq. (Al-10). We have
Thus we have
i(R;)'11(R;,t)Ja!(r - Ri)(-iliV /m)a,.(r - R;) dv
= i(R;)J exp [i'k • (R; - R;)]a!(r - Ri)( -iliV /m)an(r - R.,-) dv \Jl(R;,t)
= [vn(k)]av'P'(R,,t) (Al-33)
in which we have used Eq. (Al-31). If we now take the scalar product of
this quantity with eA, and compare with Eq. (Al-29), we see that we have
proved the theorem which we wished to prove.
If, then, we have a perturbation consisting of a potential energy V1 ,
arising from an electric field [the quantity H 1 of Eq. (Al-24)], and a
vector potential A, we see that the Schrodinger equation for \Jl(R,,t) can
be written as
(Al-36)
We take advantage of Eq. (Al-4) for the velocity, so that if we write v,,,
v11 , v. for the components of the average velocity of the wave packet, we
have
dp,, _
dt - -e
(
V,,
aA,,
ax
+ Vy aA
ax
+ V, i)x
11 aA,)
-
av1
ax (Al-37)
We set aAx/at = 0, and substitute the result of Eq. (Al-39) into Eq.
(Al-38), and find
292
Sec. A2-1] WAVE FUNCTIONS OF IMPURITY ATOMS 293
imaginary. When Eis inside one of the bands, the wavelength is real,
corresponding to a real velocity of the wave packet. The velocity goes
to zero when E is at the edge of the band.
A classical particle of energy E, moving according to the classical
Hamiltonian Eo(p) + H1(q), where p, q are momentum and coordinate,
and where Eo(p) is like the expression En(p//i) of Eq. (Al-22), would then
oscillate between points like B and C, Fig. A2-lb, reversing at each point
(a) lb)
Fw. A2-l. (a) Periodic potential, with energy bands (shaded); (b) Energy bands and
potential pushed upward by amount H 1 (shown in upper curve). Line of constant
energy E cuts band, at point A, at same relative height as energy E' in Fig. A2-la.
B and C, reversing point of. oscjll,.~tion of particle.
Fw. A2-2. Continuous and discrete levels surrounding impurity atom in n-type
semiconductor. E,, energy of a discrete level; E 2, energy in continuum.
as its velocity becomes zero, and a quantized particle will obey a quantum
condition. Such a picture, as James has emphasized, allows us to deduce
the nature of the stationary states and wave functions in such a problem.
If, for instance, the external field represented by H 1 is constant, so that
the energy bands are tilted at a constant. angle, t.he electron ,,.-ill oscillate
back and forth in coordinate space with a very large amplitude (for a
small external field), at the same time having its position in the energy
band go from bottom to top and back again, as we have seen in Sec. 2-2.
294 INSULATORS, SEMICONDUCTORS, AND METALS [App. 2
Let us now consider the application of the method to cases actually met
in the theory of solids. First we take p- and n-type impurity atoms in a
semiconductor. Then-type is a little easier to understand, and we deal
with it first, as in the corresponding discussion of Sec. 2-5. If the atom
loses an ·electron, it has enough remaining electrons to fit properly into the
lattice, but it then carries a positive charge, which introduces a Coulomb
potential (modified as to its absolute value by the dielectric constant of
the material) into the lattice. Thus the energy bands, as modified by this
Coulomb potential, will be as shown in Fig. A2-2. In these bands, we
clearly have the possibility of discrete energy levels, of a hydrogenlike
sort, at energies such as E 1• Compensating these levels, which if they
were occupied would introduce extra charge near the impurity, we see
that with higher energies in the band, such as E2, the electrons will
effectively be repelled as they approach too close to the impurity atom,
their velocity going to zero and the electrons being turned back at the
point where the line of height E 2 emerges from the top of the energy
band. Thus these other states will provide less than the normal charge
near the impurity, so that, if all the states of a band are occupied, we shall
still have just enough charge to account for one electron per atom of each
spin in the band, including the i~purity atom. This conclusion, which
has been emphasized by Friedel Cloe. cit.), will be discussed ·more fully
later, in Sec. A2-3. In the n-type semiconductor, these modified levels
are all occupied in the lower, or valence, band. We still have one electron
per impurity atom left over, however, and this at low temperature will
go into the lowest discrete level below the upper, or conduction, band, but
at slightly higher temperatures will be excited intp one of the conduction
levels.
The p-type semiconductor is handled similarly. A p-type impurity
atom normally contains one less valence electron than the atom of the
lattice, e.g., an atom of Al or Bin a lattice of Si or Ge. If we provide such
an atom with an extra electron, to make it into a negative ion, it has the
right number of electrons to fit into the lattice. Then the modified energy
bands will be as in Fig. A2-3, clearly giving discrete levels lying above the
bands, with compensating diminished electron density in those wave func-
tions lying at the bottom of the band. In the neutral crystal, there must
be one electron less per impurity atom than the number necessary to fill
the complete valence-electron band, so that at low temperatures this
electron will be missing from the discrete level lying above the band; but
at higher temperatures it will often be missing from one of the continuous
levels lying in the band, leading therefore to hole conduction.
The case of excited energy levels in crystals, which has often been
discussed (see for instance Wannier 1), is more involved, but similar to
1 G. H. Wannier, Phys. Rev., 52:191 (1937).
. Sec. A2-1} WAVE FUNCTIONS OF IMPURITY ATOMS 295
Fm. A2-3. Continuous and discrete levels surrounding impurity atom in p-type
semiconductor.
radiation than we should otherwise find. Such tails are observed in the
soft x-ray emission spectra.
The real optical case of excitation, where an electron is removed from
the valence band to a conduction band, is more complicated, in that both ·
electron and hole are readily mobile. We may then best describe it
essentially as Wannier did (Zoe. cit.), and as FrenkeP had done earlier.
Considering it classically, the electron in the conduction band attracts
the hole in the valence band, and since each has a comparable effective
mass, they each execute hydrogenlike orbits about their center of mass,
resulting in discrete states. These discrete states lie below the continuous
states; that is, the electron effectively is at the bottom of the conduction
band, like the discrete states in an n-type semiconductor as in Fig. A2-2,
while the r,ositive hole is at the top of the valence band, like the discrete
states in a p-type semiconductor shown in Fig. A2-3. The electron and
hole together form a stable structure, however, which, because of the
1 J. Frenkel, Phys. Rev., 37 :17, 1276 (1931); Physik Z. Sowjetunion, 9 :158 (1936).
296 INSULATION,_SE;MICONDUCTORS, AND METALS [App.2
mobility of both electron and hole, is free to wander through the crystal,
forming what is called an exciton. Being a neutral structure, it carries
no current. Less energy is required to set up an exciton than to raise an
electron from the valence band to the conduction band, leaving both
electron and hole dissociated from each other and free to move, so that
the wavelength for absorption to the exciton level, which does not result
in photoconductivity, is longer than the limit of photoconductivity. It
is well known that such exciton levels exist, for instance, in the alkali
halides.1 There will be further, more detailed discussion of the theory
of excitons in the next volume of this work.
A2-2. Statistical Treatment of Perturbed Periodic Lattices. A study
of the stationary states of the electrons in the perturbed lattice, such as
we have been sketching in the preceding section, is really only half the
problem; we wish, as well, to ask which levels will be occupied, which ones
empty. In thermal equilibrium, which is the only case we shall consider,
we must then supplement our theory by use of the Fermi-Dirac statistics:
the average number of electrons in a state of total energy E, with a given
spin, is given by the Fermi function F(E), defined in Eq. (1-8). From
this fact, supplemented by the knowledge of the wave functions 'Yn, of
Appendix 1, we can find the average charge density at each point of the
lattice. It is by no means necessarily true that this charge density will
automatically come out zero; hence we have space charge, and from this
space charge we can compute an electrostatic potential by Poisson's equa-
tion. We can then apply a self-consistent condition, in essentially the
sense of Hartree: we can demand that the potential energy of an electron
in this potential be the same quantity H 1 (q) which is responsible for
perturbing the energy bands.
To set up our self-consistent condition, we must first find the net charge
density as a function of position arising from our assumed energy bands
with the assumed Fermi level. We shall find this as we did in Sec. 2-5
for the case of the unperturbed periodic potential. In this potential, let
the number of energy levels per unit volume, in the energy range dE, be
(dN /dE) dE; this can be found, as is well known, from the volume of
momentumspacelyingbetweensurfacesE 0 (p) = EandEo(p) = E + dE,
since states are distributed in momentum space with uniform density in
the periodic case. In forbidden bands of energy, dN /dE is, of course,
equal to zero. Let N O be the number of electrons per unit volume neces-
sary to render the crystal electrically neutral. Then the excess number of
electrons per unit volume, with an arbitrary value of E F, is
( _J-
N EF) -
OO
00
dN I dE
exp (E - EF)/kT + 1 dE
_ T
Ao (A2-1)
1 See for instance J.C. Slater and W. Shockley, Phys. Rev., 50:705 (1936).
Sec. A2-2] WAVE FUNCTIONS OF IMPURITY ATOMS 297
(A2-2)
The index p denotes the pth atom in the chain. The simplest case of an
impurity in a linear chain is the case where the W annier functions only
have nearest-neighbor interactions and the impurity only extends over
one lattice site. The first of these restrictions means that 6(p) = 0 for
p > 1. The second of these assumptions means that V(p,q) is zero unless
both p and q are equal to zero. In this case, our difference equations
(A2-13) can be rewritten
6(0) U(p) + 6(l)[U(p + I) + U(p - l)]
= EU(p) p~I
6(0) U(Q) + 6(1)[ U(l) + U(- I)]
= [E - V(0)]U(0) p = 0 . (A2-14)
The usual way to solve the general equations in Eq. (A2-14) (the first
set) is to make the assumption that U(p) = b±v. If we substitute this
into the first of Eqs. (A2-14) we see that this is indeed a solution provided
that
6(0) + 6(l)(b + 1/b) = E (A2-15)
= exp ikR, where R is the lattice spacing, the condition of Eq.
If we let b
(A2-15) becomes
6(0) + 26(1) cos kR = E (A2-16)
302 INSULATORS, SEMICONDUCTORS, AND METALS [App. 2
other horizontal lines, where there-are only six intersections, the missing
state is a state for an imaginary value of k. This state gives a total of
N + 1 symmetric states and N - 1 antisymmetric states, giving in total
the required 2N states. We shall now go on to study in detail the state
corresponding to the imaginary value of k.
If k is imaginary, then let us denote ik by -y. This is the case where E
is such that it lies outside the band. In this case, our solution to the
difference equation is given by exp ( ± -ypR). The coefficients of our
Wannier functions are thus seen to increase exponentially in one direction.
We could proceed as before, setting up a bound state which satisfies our
periodic boundary conditions, but for large N it can be easily shown that
proceeding in this manner gives the same result as demanding that our
wave function go to zero for p infinite. If this is the case then the solution
to the first of Eqs. (A2-14) for positive pis taken as U(p) U(-p) = exp
(--yRp), from which
E = 8(0) + 28(1) cosh (-yR) (A2-18)
In order to satisfy the second of Eqs. (A2-14), we must satisfy sinh
(-yR) = V(0)/28(1). This determines a value of 'Y corresponding to a
given value of V(O). With this value of 'Y, the energy is given by Eq.
(A2-18). We can, of course, substitute for the cosh in terms of the sinh
and get the relation that
E = 8(0) + 28(1){1 + [V(0)/28(1)]21~' (A2-19)
This shows that for small values of the perturbing potential the bound
state leaves the band quadratically in V(O).
In all the preceding discussion, we have tacitly assumed that the sign
of the perturbation is the same as the sign of the nearest-neighbor inter-
action. This means that the bound state pushes out of the band at the
point where E = 8(0) + 28(1). If the signs of the perturbing potential
and the nearest-neighbor interaction are different then the bound state
will push out of the band at the point where E = 8(0) - 28(1). In
this case, it can easily be seen that the solution of the difference equation
is given by (-l)P exp (--yRp). The energy of the bound state is then
given by Eq. (A2-19) where the plus sign outside of the square root is
replaced by a minus sign.
We have now accounted for our 2N states. We have one bound state,
N - 1 antisymmetric states in the band, and N symmetric states in the
band. In Fig. A2-6 we plot the energies of these stat.es for the case N = 6
as a function of the perturLing pote11tial. We have also included for
comparison the energies of the antisymmetric states which are not affected
by the perturbation. The interesting thing to notice is the way in which
each of the energy levels within the band is displaced by the perturbation,
304 INSULATORS, SEMICONDUCTORS, AND METALS [App. 2
Symmetric
-~~~~~~;;;;::::::::!::::::::::~~~~~~~~
=
= ...,---Symmetric
/Antisymmetric
-Antisymmetric
: ========~-t--===========-Symmetric -Antisymmetric
==========--+--==========-Symmetric
==========--::±=:::::=====5~=:::::Antisymmetric
Symmetric
Symmetric Antisymmetric
V(O) becomes very large compared with the band width, the exponential
fall-off becomes very rapid, though it is smaU for small V(0). At this
point we can give an elementary check of the procedure of earlier sections,
in which the difference equation was replaced by a differential equation.
We start with the energy expression of Eq. (A2-16) and replace k in it
by the operator - i d/dx. We then use this operator to set up a differen-
tial equation, following Eq. (Al-24). In this case, this leads to
8(0)'1'( )
x
+ 28(1) ('¥ + 2! R2
__!__ d 2-It
dx 2
+ 4!
__!__ R4 d '¥ + .. ·)
4
dx 4
+ V(x)-It(x) = E-It(x) (A2-20)
where V(x) is the perturbative potential, which is zero except when x is
zero, so that except when :v is zero we can omit the term in V. The
simplified Schrodinger equation corresponding to Eq. (Al-26) is obtained
by omitting everything beyond the second derivative in Eq. (A2-20).
Sec. A2-3] WAVE FUNCTIONS OF IMPURITY ATOMS 305
Now we can, in this simple case, solve either the approximate or the exact
problem by assuming \JI' = exp (--yx), the only difference being in the
relation which we find between 'Y and E. If we substitute this expression
in Eq. (A2-20), we find a solution of the exact equation if
Our problem is to solve Eq. (3-15), the radial equation for an electron
moving in a magnetic field, in cylindrical coordinates. We introduce a
new variable in place of r, by the equation
eB
w = 1rr 2 - (A3-1)
h
where as we see the quantity w equals the area 1rr 2 of a circle of radius r,
divided by the fundamental area h/eB which we encountered in Sec. 3-2.
We also introduce a dimensionless quantity W in place of the energy,
by the equation
E _ efijB _ k;fi 2 = W efiB = W fiw (A3-2)
2m 2m 2m 2
where w is the cyclotron frequency. When we convert Eq. (3-15) into a
form involving these new variables, it becomes
d 2R + l dR _ j 2 R + WR _ R _ o (A3-3)
dw 2 w dw 4w 2 2w 4
Fock then shows that we can solve this equation by setting
R = wil2e-w/2 F (w) (A3-4)
where F is to be determined. When we substitute this expression into
Eq. (A3-3), we find that F must satisfy the equation
w d2 F + (j +l - w) dF +W - .i - 1 F = 0 (A3-5)
dw 2 dw 2
which has the same form as Eq. (A3-5). We have a solution of Eq.
(A3-5), then, if we set
di
F = -d
X'
. Ln+; W = 2n +j + 1
E = (n + + !) eJiB + k;Ji2
j
2 m 2m
(A3-8)
The energy which we have found agrees with the value of Eq. (3-8),
since n + j must be an integer, which we now see is identical with the
quantum number n found by the other method. We have a different
form for the wave functions, however; though by general principles we
know that one of the wave functions corresponding to a given value of
n + j must be capable of being expressed as a linear combination of the
functions for the same quantum number determined by Landau's method.
This linear combination, however, may be very involved, and our present
method obviates the need of finding it.
Let ua consider the wave functions. The quantity F can be rewritten
in the form
(A3-9)
Table A-4-1
Values of a</>, from Eq. (9-26), computed for grid of points x/a, y/a, z/a as tabulated.
This includes the entire Wigner-Seitz cell. In parentheses after each set of values
x/a, y/a, z/a is the weight of the corresponding point, as discussed in the text. The
function a(</>1 + </>2) represents the analytic approximation of Eqs. (A4-l) to (A4-4),
and the last column gives the error of this analytic approximation.
y z
-X a
-
a
Weight a<f, a(<f,1 + </>2) a(<f, - </>1 - </>2)
a
0 0 0 (1) 0.000000
0 0 0.05 (6) 15.436032 15.436048 -0.000016
0 0 0.10 (6) 5.498136 5.498154 -0.000018
0 0 0.15 (6) 2.266206 2.266254 -0.000048
0 0 0.20 (6) 0.736704 0. 736810 -0.000106
0 0 0.25 (6) -0.095932 -0.095702 -0.000230
0 0 0.30 (6) -0.572664 -0.571965 -0.000699
0 0 0.35 (6) -0.845511 -0.845349 -0.000162
0 0 0.40 (6) -0.995141 -0.995494 0.000353
0 0 0.45 (6) -1.068118 -1.068456 0.000338
0 0 0.50 (1) -1.089730 -1.084727 -0.005003
0 0.05 0.05 (12) 9.599216 9.599224 -0.000008
0 0.05 0.10 (24) 4.463929 4.463873 0.000056
0 0.05 0.15 (24) 1.946518 1. 946551 -0.000033
0 0.05 0.20 (24) 0.611266 0.611356 -0.000090
0 0.05 0.25 (24) -0.147777 -0.147556 -0.000221
0 0.05 0.30 (24) -0.589770 -0.589408 -0.000362
0 0.05 0.35 (24) -0.843503 -0.843178 -0.000325
0 0.05 0.40 (24) -0.981810 -0. 982107 0.000297
0 0.05 0.45 (12) -1.048532 -1.049702 0.001170
0 0.10 0.10 (12) 2.654861 2.654861 0.000000
0 0.10 0.15 (24) 1.236070 1.236326 -0.000256
0 0.10 0.20 (24) 0.304542 0.304543 -0.000001
0 0.10 0.25 (24) -0.277616 -0.277473 -0.000143
0 0.10 0.30 (24) -0.628521 -0.628026 -0.000495
0 0.10 0.35 (24) -0.828892 -0.827908 -0.000984
0 0.10 0.40 (12) -0.934037 -0.932950 -0.001087
0 0.15 0.15 (12) 0.514120 0.513989 0.000131
0 0.15 0.20 (24) -0.047181 -0.047464 0.000283
0 0.15 0.25 (24) -0.427399 -0.427275 -0.000124
0 0.15 0.30 (24) -0.657413 -0.657145 -0.000268
0 0.15 0.35 (12) -0.778107 -0. 775919 -0.002188
0 0.20 0.20 (12) -0.342942 -0.343846 0.000904
0 0.20 0.25 (24) -0.540852 -0.542156 0.001304
0 0.20 0.30 (12) -0.639001 -0.640972 0.001971
0 0.25 0.25 (6) -0.582520 -0.587592 0.005072
0.05 0.05 0.05 (8) 7.025240 7.025248 -0.000008
0.05 0.05 0.10 (24) 3.706142 3.706154 -0.000012
0.05 0.05 0.15 (24) 1.674425 1.674449 -0.000024
0.05 0.05 0.20 (24) 0.497997 0.498069 -0.000072
0.05 0.05 0.25 (2J) -0.196045 -0.195815 -0.000230
0.05 0.05 0.30 (24) -0.606233 -0.605832 -0.000401
0.05 0.05 0.35 (24) -0.842198 -0.841850 -0.000348
312 INSULATORS, SEMICONDUCTORS, AND METALS [App. 4
X y z
-
a a
-
a
Weight acp a(r/>1 + r/>2) a(cp - r/>1 - r/>2)
We notice from the figure that the barrier is lowest along the 011 direction,
toward the nearest neighboring lattice point, higher along 111, and highest
along 001, toward the second-nearest neighbors. ·
Near the origin, from Fig. A4-1, the potential goes infinite, or the
potential energy of an electron goes to minus infinity. This of course
is on account of the unit positive point charge at the lattice point. It
seems reasonable that we should be able to give an analytic expression
for the energy, at least in this neigh-
borhood. In fact, if we consider
the problem a little more carefully,
we see that an analytic expression
for <J, can be given everywhere within
the Wigner-Seitz cell.
The potential cJ, within this cell is
a solution of Poisson's equation, o<f,
V2<J, = - 4irp, as we have noted
earlier. The charge density consists 0
of a ·unit point charge at the origin,
and a uniform negative charge,
which must be -1/0 = -4/a 3, so
that the negative charge within the
-1
Wigner-Seitz cell, whose volume is
n = a 3/ 4, may equal a unit negative
charge. But within the Wigner-
0 0.1 0.2 0.3 0.4 0.5
Seitz cell, and in fact within a sphere r/o
extending out to the nearest neigh-
FIG. A4-l. Behavior of potential
boring lattice point, which comes at around origin, Ewald problem for face-
centered cubic lattice, along 001, 011,
r/a = 1/y2 = 0.707
and 111 directions.
the charge distribution is spherically
symmetrical. Hence one can solve Poisson's equation in spherical coor-
dinates. We find in this way a particular solution of the differential
equation,
1 81r
<J,1 = - + -
3a 3 r 2 + constant (A4-1)
r
as the reader can verify at once by finding the Laplacian of the expres-
sion cf>; it proves to be 41r(4/a 3), or the negative of the volume charge
density, times 411", as Poisson's equation demands. The term 1/r of course
is the potential of the point charge at the oriµ:in, a singularity.
We now know by the theory of inhomogeneous differential equations
that the general solution of Poisson's equation must equal the particular
solution given in Eq. (A4-1), plus a general solution of the homogeneous
equation V2<J, = 0, or Laplace's equation. Since by symmetry we must
314 INSULATORS, SEMICONDUCTORS, AND METALS [App. 4
<1>2 (z
= !a {A4 ar 44 4+ m 4 + n 4 - ~)
5
+ A 6::[l 6 + m 6 + n6 - !~ (l 4 + m 4 + n 4) + ~~]
+ As asrs [ zs + ms+ ns - 28
15 (l6 + m6 + n6) + 14
13 (l4 + m4 + n4)
7]
- 39
+ · · ·} (A4-2)
Here l, m, n are the direction cosines, x/r, y/r, z/r, respectively, r being
the distance from the origin.
One finds that a fairly adequate fit to the function of Table A4-1 can
be given by using only the terms given in Eqs. (A4-1) and (A4-2), the
expression for the total potential being qi 1 + q>2. We find that the con-
stant in Eq. (A4-1) is given by writing it in the form
<1>1 =!+ 8
3 a71'3 r 2 - 4.584850 (A4-3)
r
The constants A 4 , A 6 , As have been determined by least squares, choosing
them so as to minimize the sum of the square;; of the deviations between
the correct values of qi and the approximations 4> 1 + <1>2. They are found
to be
A4 = -18.687
A 6 = -1,002.05 (A4-4)
A 8 = 2,326.1
With these values, the deviations between <1>1 + <1>2 and the correct q>
are in most cases less than one unit in the third decimal place. The few
larger deviations come around the surface of the Wigner-Seitz cell, where
the terms in higher power of r, which we are omitting, would be most
important. There are deviations of approximately ±0.005 at the points
x/a, y/a, z/a = 0, 0, 0.50 and 0, 0.25, 0.25, where in the first case the
value of a(4> 1 + <1>2) is -1.084727 compared with aqi = -1.089730, and in
the second case a(qi 1 + qi 2) is -0.587592 compared with aqi = -0.582520.
These are the largest discrepancies. They could of course be removed
by using more terms of the series of Eq. (A4-2). If \Ye try to use fewer
terms than the three included in Eq. (A4-2), we cannot get a satisfactory
fit. '
The point x/a = y/a = 0, z/a = 0.50, is a point of complete cubic
[App. 4 EWALD'S METHOD .FOR CRYSTALLINE FIELDS 315
symmetry, like the origin .. It is the point at which a negative ion would
be located in the sodium chloride structure, if a positive ion were placed
at the origin. We can then find an expansion of the type given by Eqs.
(A4-1) and (A4-3) about this point as well as about the origin, except
that the term 1/r from Eq. (A4-1) (where r is now the distance from the
point about which we are expanding) will be missing, since there is no
point charge here in the Ewald problem. When we try to carry out this
expansion, however, we find that the convergence is much poorer than
about the origin. The coefficients
A4, A 6, As are very much larger
than in Eq. (A4-4), and in fact the
expansion of f/,2 with only three
terms is quite inadequate except for
points quite close to r = 0. The
reason is the smaller region over
which the charge density is spheri- u¢
cally symmetrical: as r approaches
a/2, we approach the origin, at 0
which there is a singularity on ac-
count of the point charge located
there, and a series expansion must
diverge. We can see this situation
-1
graphically from Fig. A4-2, in which
we show the potential in the neigh-
borhood of the point 0, 0, 0.50, in the 0 0.1 0.2 0.3 0.4 0.5
three directions 001, 011, 111 pro- r/u
ceeding from that point. We see
FIG. A4-2. Behavior of potential
that the three curves diverge from around point 0, 0, 0.50, in face-centered
each other at much smaller values of cubic lattice, along lines proceeding
r than in Fig. A4-1, showing the from this point in the 001, 011, and 111
much larger value of the nonspheri- directions.
cal potential in this case.
The Ewald method was first worked out in connection with Madelung's
problem in the theory of ionic crystals. As mentioned above, in a crystal
of the sodium chloride structure, we should have a positive ion at each
lattice point of the face-centered cubic lattice, and a negative ion at each
point 0, 0, 0.50. If these ions were regarded as point charges, we should
get the potential at any point within the crystal by superposing the solu-
tion of Table A4-1, and another potential shifted along so that its singu-
larity would come at 0, 0, 0.50, and given the negative sign. In this case
the two uniform charge densities would cancel, and we should be left
with the potential merely of the positive and negative point charges.
In studying this problem, Madelung, in the reference cited earlier;
316 INSULATORS, SEMICONDUCTORS, AND METALS [App. 4
Hence the potential near a positive ion in the NaCl structure will be
1
= - - 3.495120
r
+ terms m. r + · · ·
4
(A4-6)
But in Eq. (A4-3) we have shown that <f,, up to terms in r4, is given by <f,1.
For present purposes we need only the first two terms of this expression,
and find
The first term of Eq. (A4-9), in 1/r, is the one giving the Hertz vector
arising from the dipole at the origin, and the remaining terms give the
Hertz vector arising from more distant dipoles. The quantity which
we wish to evaluate in Eq. (4-45) excludes the dipole at the origin, so
that it is derived from the term in r 2 in Eq. (A4-9).
Let us now evaluate the electric field arising from this second term.
When we remember that for the face-centered cubic lattice, for which
these calculations are made, we have g = a 3 /4, we can write the required
term as
Z" = 6: 11 exp i[wt - (kr + i'k;) • r]r 2 (A4-10)
This represents a Hertz vector in the z direction, so that Z" is the z com-
ponent of the vector. To find the electric field, we use Eq. (4-23), which
can be rewritten as
1 i:J2Z"
E" = curl curl Z" + 'i/ 2Z" - - - - 2 c2 at
= grad div Z" - -c21 a z"2
-- (A4-11)
at 2
We can readily show that the time derivative term and the space deriva-
tive terms arising from differentiating the exponential in Eq. (A4-10)
are small compared with the leading term, which comes by differentiating
the r 2 term, by powers of r/X, where X is the wavelength of the light.
Since we are dealing with values of r very small compared with the wave-
length, we can disregard these terms. Then we have
div Z" = 6M .[
Eofl exp t wt -
(k r + t"k)i • r ] az
a(r2)
of magnitude 2µ/ 41TEoR 3 times a function of the angle between the axis
of the dipole and the internuclear direction. This field will polarize the
polarizable object, producing a dipole moment proportional to 2aµ/4?TEoR 3 •
This induced dipole will produce an electric field at the position of the
first dipole proportional to 4aµ/(41TEo) 2 R 6• There will be an energy of
interaction between the first dipole and this field, equal to the product
of the dipole moment of the first dipole, the strength of the field, and the
cosine of the angle between the direction of the dipole and that of the
field. Thus, aside from functions of angles, the energy will be propor-
tional to 4aµ 2/(41TEo) 2R 6• It is now a problem of slight complexity to
average over different orientations, and find the average potential energy,
but it proves to be an attraction, as before, equal to a simple numerical
constant times -4aµ 2 /(4?TEo) 2R 6 •
A single atom in an S state has no dipole moment, and therefore cannot
act on another atom according to the law we have just described. How-
ever, this only applies to its average dipole moment, the average over the
wave function of the sum of the quantities ex, ey, ez for all electrons in
the atom. Instantaneously-that is, when each electron is in a given
point of space-there will be a nonvanishing dipole moment, which can
polarize the other atom, just as we have described. This polarization
produces a field which reacts back on the original instantaneous dipole,
producing the potential energy proportional to -4aµ 2/(4?TEo) 2R6, as we
found above. It is this quantity which w_e must then average over the
wave function. We are now averaging µ 2, proportional to x 2 or y 2 or z2,
and necessarily leading to a nonvanishing average value, since the
integrand is always positive. Hence we are led to a nonvanishing
attraction in this case too,
.
A ttract10n 4a(µ 2 )av
= - constant (411"Eo)2R 6 (A5-2)
This type of attraction must hold for any pair of atoms, and it is the
ordinary Van der Waals attraction.
This is only the first term in a series of inverse powers of R. The
atom will have not only an instantaneous dipole moment, but an instan-
taneous quadrupole, and so on with higher multipoles. Each of these
will produce a field at the position of the neighboring atom, will polarize
it, and the resulting dipole will react back on the multipole. In this
way we find additional terms in R- 8 , • • • , which are important at some-
what smaller distances than those at which the attraction of Eq. (A5-2)
begins to be appreciable. This type of inverse power-series expansion
only holds when the charge distributions are not overlapping, or at
distances greater than thos.e for which our calculations in Volume I were
carried out. One must use other methods of mathematical treatment
for smaller distances. It is not in any sense true that as R goes to zero
Sec. A5-2] POLARIZATION AND VAN DER WAALS ATTRACTION 321
the Van der Waals attraction becomes infinite, as Eq. (A5-2) would sug-
gest. It rather turns out to be the case that the Van der Waals attrac-
tion between two helium atoms, for instance, leads to a potential mini-
mum at large values of R, the repulsion which we have discussed in
Volume 1, Sec. 6-4, then takes over, and by the time the repulsion becomes
large, the Van der Waals attraction effect has become negligible compared
with the repulsion, and the calculations of the type carried out in Volume
1 become correct for these smaller values of R.
We can see from this qualitative discussion that an understanding of
the Van der Waals attraction requires an understanding of the polariza-
bility of atoms. Consequently we shall treat that problem first, and we
shall find that the procedures which we use to discuss it can be extended
without trouble to treat the Van der Waals attraction as well. There
are two quite different methods which have been used for treating both
these problems: a method based on perturbation theory, and one based
on variation methods. We shall discuss both of them, starting with that
based on perturbation theory. This method is good for gaining a general
understanding of the problem, while the variation method is better for
numerical calculations. For the ls state of hydrogen, we can in addition
get an exact solution of the problem of polarizability, which we shall
derive, and which forms a valuable guide in setting up the variation
solution.
A6-2. The Perturbation Method for Polarizability. Let us assume an
atom in an external electric field E, along the z direction. The nucleus
will be at the origin, and we assume that we have solved exactly the
problem of Schrodinger's equation for the isolated atom. The Hamil-
tonian will consist of the kinetic energy of all electrons, their potential
energies in the field of the nucleus, their mutual Coulomb repulsions, and
their potential energies in the external field. All the terms except the
last are present for the isolated atom, and may be combined in an expres-
sion (H 0) P. The potential energy in the external field will be called
0
(H 1)op• We can write down the formula for it very simply. The poten-
tial energy of an electron whose coordinate is z, in the external field, is
eEz, where the charge on the electron is -e, and the electrostatic poten-
tial is - Ez. Hence the perturbing term in the Hamiltonian is
(H 1)op = "'Z-(i)eEz; (A5-3)
where the sum is over all electrons. We can express this in terms of the
dipole moment of the atom. By definition, this is a vector quantity,
whose x, y, and z components are
(llfx)op = -e"'Z-(i)x;
(M,,)op = -e"'Z-(i)y; (A5-4)
(M,)op = -e"'Z-(i)z;
322 INSULATORS, SEMICONDUCTORS, AND METALS [App. 5
so that the dipole moment is the sum of the products of the charges of
the electrons times their displacements. Then we have
(H 1}op = -E(M,}op = -E • (M}op (A5-5}
Energy= E~ + \'
~
(n) ~~~~:
1 n
E + 2 (A5-7)
If we find the average value of the dipole moment operator (A5-3) over
the wave function of Eq. (A5-8), the nonvanishing contributions of the
first power in E will come from the cross terms between u~ and u~ in
Eq. (A5-8). Hence we shall have
(A5-9)
where in the last expression we have interchanged the order of E~ and E~,
since by hypothesis E~ is the energy of the ground state, and hence is
less than E~. From Eq. (A5-10), we· then see that the term in the energy
of Eq. (A5-7) proportional to E 2 is -aE2/2, as we stated earlier that it
should be.
324 INSULATORS, SEMICONDUCTORS, AND METALS [App.5
We now see that if we know the energies E! of the excited states, and
the matrix elements (M,hn of the electric dipole moment between the
ground state and all excited states, we can evaluate t~e polarizability
rigorously in terms of a summation. This can be done for the hydrogen
atom, for which the matrix elements are known; but in the next section
we shall demonstrate a much simpler method of solution in that case.
In carrying out the summation, one must remember that the excited
states include not merely the discrete levels, but also a continuum, and
that the part of the summation referring to the continuum must be con-
verted to an integration. The calculations which have been made by
this method have merely summed numerically, and used numerical
approximations for the integration over the continuum; it does not appear
to be possible to convert the sum into a closed analytic form, or otherwise
simplify the process. Hence, though this is a straightforward procedure
for finding polarizability, it is not particularly well suited for numerical
calculations.
There is, however, one point of view which makes this perturbation
treatment very significant, and that is its relation to dispersion theory.
The well-known Kramers-Heisenberg dispersion theory (see for instance
J.C. Slater, "Quantum Theory of Atomic Structure," vol. 1, McGraw-Hill
Book Company, 1960, sec. 6-9) yields an expression for the induced dipole
moment of an atom, not only in the presence of a static applied electric
field, but also for a field varying sinusoidally with the time. If the fre-
quency of the external field is v, one finds that the polarizability is
form
(A5-12)
where (A5-13)
and where -e, mare the charge and mass of the electron. The quanti-
ties f n1 are called the oscillator strengths. They are dimensionless, and
their importance is that one can prove that
!-(n)fn1 = N (A5-14)
where N is the total number of electrons in the atom. Thus, for hydro-
gen, N = I. One can rewrite Eq. (A5-12), by using the easily proved
relation that
e2h2
41r 2m = 4(41rEo)a& Ry 2 (A5-15)
a= 4(41rEo)a& I
n=2
(l !;;n 2) 2 + contribution from continuum (A5-17)
For the continuum, Sugiura gives a formula for the integrated value of
the f's for transitions from the ground state to excited states whose
energies lie between E and E + dE (where E = 0 for the series limit).
A somewhat simpler and almost as accurate formula is given by Eisen-
schitz and London, 2 whose formula states that the integrated value of
1 Y. Sugiura, J. Phys. Radium, 8:113 (1927).
2 R. Eisenschitz and F. London, z. Physik, 60 :491 (1930).
326 INSULATORS, SEMICONDUCTORS, AND METALS [App. 5
We can now use these values to compute the value of the expression
of Eq. (A5-17) for hydrogen. In Table A5-1 we give the values of f,.1
as computed from Sugiura's expression of Eq. (A5-18), the values divided
by (1 - 1/n2) 2, and the summations. We also give the summations for
the continuous spectrum, computed from Eq. (A5-19). We give the
summations of the f's, to check the sum rule, as well as of the quantities
f/(1 - 1/n2) 2 and f /(1 +
E) 2 required for the computation of the polar-
izability. The integrations over the continuum, carried out by use of
Eq. (A5-19), are elementary.
We see from Table A5-1 that the summation in Eq. (A5-17) is approxi-
mately 1.125, leading to a polarizability for hydrogen in its ground state
fn1
n fn1
(1 - 1/n 2) 2
2 0.4162 0.7399
3 0.0791 0.0990
4 0.0290 0.0330
5 0.0139 0.0150
6 0.0078 0.0082
7 0.0048 0.0050
8 0.0032 0.0033
9 0.0022 0.0022
10-oo 0.0079 0.0079
Continuum 0.4342 0.2084
- -
Sum 0.9983 1.1219
Note: The departures of the sums from 1.0000 and 1.1250, respectively, arise partly
because not enough decimals are carried for the discr~te states, partly because Eq.
(A5-19) for the continuum is only an approximation.
fzi
u = '\j--:; e-Zr[l + v(r) cos 8] (A5-22)
coordinates.
328 INSULATORS, SEMICONDUCTORS, AND METALS [App. 5
( - 1i.2v2
-2m - --Ze
41rEor
+ eEr cos 8
2 )
u = ( -Z2Ry + e)u (A5-23)
where the first two terms on the left represent the Hamiltonian operator
for the unperturbed atom, eEr cos 8 is the perturbing Hamiltonian,
according to Eq. (A5-3), and we have set the eigenvalue on the right side
equal to -Z2 Rydbergs, the value for the unperturbed problem, plus a
correction term e. We shall now express the energy in Rydbergs, and
the distances in atomic units. We shall express the field E in units such
that eEao = Rydbergs, or the unit of E is Rydbergs/eao. In these units,
Eq. (A5-23) is transformed into
The first term -Vu cancels the first term on the right of Eq. (A5-24).
We now recall that we are trying to get only the terms in v linear in the
applied field E, and we recall from Eq. (A5-7) that the first term in the
energy depending on E will be proportional to E 2 • Then the bracket
in Eq. (A5-25), [ -d2v/dr 2 + (2Z - 2/r) dv/dr + 2v/r2 + Er], will be of
the first order of small quantities, while the expression Erv, and the energy
f, on the right side of Eq. (A5-24), will be of the second order. We may
then get a solution to the desired order of approximation by omitting
these second-order terms, and merely equating the first-order terms to
zero.
Sec. A5-3] POLARIZATION AND VAN DER WAALS ATTRACTION 329
Then the polarizability which we have computed for the ground state of a
hydrogenlike ion with atomic rrnmber Z, from Eq. (AG-29), is
a = 4.5
z 4 (4 7rEo) a03 (A5-31)
330 INSULATORS, SEMICONDUCTORS, AND METALS [App.5
We are interested in the effect of this term at distances larger than those
at which the Reitler-London method indicates any appreciable inter-
action energy, and at these large distances we can expand (Hi)op in
inverse powers of R.
Let the nucleus a be at the origin, and the nucleus b at a point located
a distance R along the positive z axis. Let Xia, Yia, Zia be the coordinates
of the first electron, with respect to nucleus a as an origin, and X2b, y 2b, z 2b
be the coordinates of the second with respect to nucleus b. The coordi-
nates in this form will be convenient in case electron 1 is near nucleus a,
and electron 2 near nucleus b. Then we have
r12 = V (X2b - + (Y2b - Yia) 2 + (z2b - Zia + R) 2
Xia) 2
We can then expand l/ri2 in power series, treating (x2b - x 1a)/R, etc ..
as small quantities, and we find
1 1 1 1
-
r12·
=- - -
R R2
(z2b - Zia) - 2R3 [(X2b - Xia) 2 + (Y2b - Yia) 2
1
+ R 3 (z2b - Z1a) 2 + · (A5-35)
We can now find 1/rib by using Eq. (A5-35), but setting X2b, y 2b, Z2b
equal to zero, and can find l/r2a in the same way by setting Xia, Yia, Zia
equal to zero. When we do this, and substitute into Eq. (A5-33), we find
(A5-36)
where the further terms are in higher inverse powers of R. The terms
which we have given in Eq. (A5-36) represent the interactions of instan-
taneous dipoles in the two atoms. In Eq. (A5-36) we have used atomic
units; in ordinary units the interaction energy is
(A5-37)
The energy of the excited state, minus that of the ground state, will be
hvn 1 + hv,,. 1 , the sum of the excitation energies of the electrons in the
two atoms. Then we can apply second-order perturbations to find the
energy as affected by the Van der Waals attraction. The added energy,
in addition to the unperturbed energy of the two atoms, will be
We must now find the products (H 1)1,nm(H 1)nm,1• In carrying out the
multiplications of the expressions of Eq. (AS-38) by themselves to get
the products, we shall have terms like (M xlhn(M x1) n,1(M x2h.,,.(M x2)m, 1,
and cross terms like (Mx1)1,n(M,1)n,1(Mx2hm(Mz2)m,I• These cross terms,
however, will be zero, as we can see by the following argument: The only
transitions for which the matrix elements will be different from zero, as
we have noted earlier, will be those from the ground state, ans state, and
excited p states. But we have also noted that (M.)op will have non-
vanishing components only to a p state whose magnetic quantum number
is zero. On the-other hand, (M,,)op will have nonvanishing components
only to a p state whose magnetic quantum number is ± 1. In other
words, there are no transitions for which both components are simul-
taneously different from zero, so that the product vanishes. A similar
result can be proved for the other cross terms, by choosing the axis of
the spherical coordinates to lie along another one of
the rectangular
coordinates.
334 INSULATORS, SEMICONDUCTORS, AND METALS
We can now substitute from Eq. (A5-38) in Eq. (A5-39), and find, in
ordinary units,
1
Van der Waals energy =
This result should be correct, aside from small errors arising from
carrying insufficient decimal places in the summation, and from the fact
that the expression of Eq. (A5-19) for the continuum is not exactly .
correct.
A6-6. Variation Methods for Van der Waals Attraction in Hydrogen.
Variation calculations of various sorts have been made of the Van der
Waals attraction in hydrogen. The first type of calculation was origi-
Sec. A5-5] POLARIZATION AND VAN DER WAALS ATTRACTION 335
nated by Hasse (loc. cit.), and carried further by Slater and Kirkwood
(loc. cit.). The idea behind this calculation goes back to the exact treat-
ment of the polarizability of hydrogen, in Eq. (A5-27). We notice from
that equation that the perturbed wave function for a hydrogen atom in
the presence of an external field can be written as the product of the
unperturbed wave function, yZ3/re-z', and a factor which equals unity
plus a perturbation term. This perturbation term in turn can be written
as the product of the perturbative energy, Er cos 8, and a function of r.
Hasse suggested that it should be possible in more general cases to write
the perturbed wave function in this same general form, of the unper-
turbed wave function times a factor consisting of unity plus the pertur-
bative energy times a function of the radius or radii. In particular, for
the Van der Waals attraction in hydrogen, we might expect to multiply
the unperturbed wave function, which for two hydrogen atoms is (Z3/r)
exp [-Z(r 1a + r2b)], times a factor equal to unity plus the perturbative
energy of Eq. (A5-36) times a function of r 1a and r2b. Slater and Kirk-
wood showed that if one assumes this form, and substitutes into the
differential equation, one can prove that such a solution in fact exists,
though they did not set up an explicit form for the function of r1a and T2b-
However, led by the success of the variation calculation of the polariza-
bility of hydrogen, they tried the function
found a minimum of the energy for the value v = 0.325, and found that
the resulting energy corresponded to a Van der Waals attraction similar
to that of Eq. (A5-44), but with a constant -12.98. The difference
between this value and that of Eisenschitz and London is within the
numerical error of either calculation.
Pauling and Beach (loc. cit.) have carried out a much more elaborate
variation calculation, and their results are the most accurate we have
for the Van der Waals attraction in hydrogen, at large R. In the first
place, they carried their calculations to higher inverse powers of R than
we have so far considered, treating not only the dipole-dipole interactions
between the atoms, but dipole-quadrupole and quadrupole-quadrupole
interactions, or inverse sixth, eighth, and tenth powers of R. Second,
they have described the wave function in quite a different way, essentially
a configuration interaction, setting up a complete set of one-electron
functions, and expanding the perturbed wave function in terms of this
complete set. It is possible to set up a complete set of radial functions
by using a single exponential, e-zr, times an appropriate function of
angle, times a polynomial in r. For the lowest state of a given l value,
this polynomial is the single term r1 ; for the next lowest it is r 1(1 + ar),
where a is chosen to make the function orthogonal to the lowest state;
336 INSULATORS, SEMICONDUCTORS, AND METALS [App. 5
internuclear distance. This was less general than the variation function
of Slater and Kirkwood, who included a power of r 1ar 2b in the factors
A and B; it was more general, however, in that A and B were allowed to
vary independently, instead of having B constrained to equal -2A, as
in the ·earlier calculation. There was no attempt to expand A and B in
inverse powers of R, as in the work of Pauling and Beach.
Hirschfelder and Linnett then made a two-electron wave function of
proper symmetry from this product, in the form
a(l)b(2)[1 + A(X1aX2b + Y1aY2b) + Bz1aZ2b]
+ b(l)a(2)[1 + A(x1bX2a + Y1bY2a) + Bz11,Z2al (A5-47)
which reduces to the ordinary Reitler-London function when A and B
go to zero. Finally they added an ionic term, a(l)a(2) + b(l)b(2), with
an adjustable coefficient. They then varied A, B, the orbital exponent a,
and the coefficient of the ionic term, at each value of R. They thus
obtained a fairly good approximation to the Van der Waals interaction
at large distances (though not as accurate as that of Pauling and Beach),
and at small distances we recognize that the calculation reduces, if A
and B are set equal to zero, to that of Weinbaum, which we have taken
up in Volume 1, Sec. 4-4.
They found, as one would expect, that the parameters A and B went
to zero at infinite values of R. At large R's, B was approximately - 2A,
as would be expected from the form of the perturbative energy, but this
was not at all the case at smaller R's. However, there was no tendency
for A and B to become very large at small R, as would be suggested from
an expansion in inverse powers, such as we see in Pauling and Beach's
results. It is interesting to comp3:re their calculated values for the inter-
action energy of two hydrogen atoms with that of Pauling and Beach,
obtained from Eq. (A5-45). We give such a comparison in Table A5-2,
similar to table VII in the paper of Hirschfelder and Linnett.
Tobie A5-2
2:t
Interaction energy of two hydrogen atoms, in 1 ground state, according to Pauling
and Beach (P.B.) and Hirschfelder and Linnett (H.L.). Energy in Rydbergs, distance
in atomic units.
In this table, we first compute the three terms in Pauling and Beach's
series of Eq. (AS-45), to show their relative sizes at the sort of internuclear
distances concerned in Van der Waals attractions. We see that the
series converges fairly rapidly at the larger distances concerned. At
these larger distances-R/ao = 10 and beyond-the Pauling-Beach
energy lies below that of Hirschfelder and Linnett, since as we have seen
the Pauling-Beach wave function is more flexible. However, at the
smaller distances, where overlap becomes important, the Hirschfelder-
Linnett energy is lower, and by so much at R/ao = 6 that it is clear that
here the Van der Waals effect is entirely overshadowed by the exchange
effect characteristic of the Reitler-London calculation. At smaller dis-
tances than this, the very small contributions of the Van der Waals
terms can be disregarded, and this particular calculation would become
identical with that of Weinbaum, which we have discussed in Volume 1,
Chap. 4.
It would be very interesting to see a calculation of the hydrogen prob-
lem which treated the Van der Waals interaction at large distances by
the method of Pauling and Beach, which is undoubtedly very accurate
in this limit, which would reduce to the results of James and Coolidge
at smaller distances, and which would reduce to the results of Hylleraas
for the combined helium atom. There would be nothing impracticable
about such a calculation, but as far as the author knows, it has not been
carried out.
One further remark should be made about the Hirschfelder-Linnett
calculation: they also treat the repulsive 3 2":,, state of H2, and there find,
as we should expect, that the Van der Waals attraction leads to an energy
minimum at large distance, between 8 and 9a 0, before the repulsion sets
in which we have described in Volume 1, Chaps. 3 and 4. This case of
course is a more interesting one for studying the Van der Waals attraction
than the ground state, in which the only effect of the Van der Waals
force is to increase somewhat the attraction at large distances, as com-
pared with a Reitler-London calculation.
A5-6. Van der Waals Attraction in Helium. There have been numer-
ous treatments of the Van der Waals attraction between two helium
atoms, though they are not as complete as in hydrogen. Here the prob-
lem is inherently more interesting than in the ground state of hydrogen,
for here the Van der Waals attraction combines with the repulsion, of
the type which we discussed in Volume 1, Chaps. 1 to 4, to produce an
energy minimum at large distances, which is responsible for the liquefac-
tion of helium at very low temperatures. That is a celebrated problem
in the kinetic theory of gases, on account of the Bose-Einstein condensa-
tion, and formation of the phase helium II. Consequently it has been
particularly important to estimate the nature of the energy curve near
Sec. A5-6) POLARIZATION AND VAN DER WAALS ATTRACTION 339
Table A5-3
Oscillator strengths for transitions ls' 18--> Isnp 1p, In helium; estimates of
Dalgarno and Lynn.
n fn1
2 0.239
3 0.081
4 0.0325
5 0.0162
6 0.0093
7 0.0058
8 ·0.0039
9 0.0027
10 0.0020
11-oo 0.0088
Continuum 1.599
Distribution off in continuum: df/dE, where Eis energy in Rydbergs, at vario~s
wavelengths in Angstroms, as given by Dalgarno and Lynn. Values of E given in
table below are measured upward from series limit.
X, A E, Rydbergs df/dE
from Eq. (A5-48). Thus (hv) .. v = 2.40 Rydbergs, which is 1.33 times
the ionization energy of 1.80 Rydbergs. This is to be compared with the
value 0.9428 which we found in Eq. (A5-21) for hydrogen. In other
words, the center of gravity, so to speak, of the spectrum for hydrogen
lies within the range of the discrete spectrum, while in helium it lies a
considerable distance out in the continuum.
Now we shall discuss some of the variation calculations which have
been made of the polarizability and Van der Waals attraction in helium.
Hasse (lac. cit.) was one of the first to make such a calculation. He
obtained a value of -2.826/(R/ao) 6 Rydbergs for the Van der Waals
energy, to be compared with the value of -3.001/(R/a 0) 6 found by the
more accurate perturbation method quoted in Eq. (A5-49). Slater and
Kirkwood (lac. cit.) used several different variation functions, and got
as a preferred value -3.18/(R/ao)6, when expressed in Rydbergs. This
value was arrived at by a method similar to that used by the same writers
for the hydrogen case, and using an unperturbed wave function for the
helium atom deduced by the present author. 1 This ·wave function was
set up by piecing together various analytic forms in different parts of the
configuration space, and was believed to be fairly accurate, though not
as good as the wave functions deduced later by Hylleraas. The author
had calculated the repulsive interaction energy for this wave function, by
methods similar to those described in Volume 1, Chap. 6, and had obtained
numerical values which could be fairly well fitted by an exponential func-
tion, which when expressed in Rydbergs is 35.3 exp [-2.43(R/ao)]. This
repulsive interaction is very close to that calculated by Griffing and
Wehner, described in Volume 1, Sec. 6-4.
It was suggested by Slater and Kirkwood that one might approximate
the interatomic potential of two helium atoms by merely adding the
inverse sixth-power Van der Waals attraction and this exponential
repulsion, obtaining the expression
We see by comparison of Eq. (A5-50) and Eq. (A5-49) that the inverse
sixth-power term of Eq. (A5-50) is too large. On the other hand, there
are inverse eighth-, tenth-, and higher-power terms which should be
included, similar to those of Pauling and Beach for hydrogen, given in
Eq. (A5-45) and Table A5-2, which are omitted in Eq. (A5-50). Prob-
ably the error in the inverse sixth-power term compensates for the omis-
sion of these terms. And the further fact that the inverse sixth-power
term is not correct at smaller values of R is more or less hidden by the
fact that the exponential repulsion becomes so great at these smaller R's.
Various more recent calculations by the variation method have been
made, though none give completely reliable results. We shall quote only
one recent one, by Moore. 1 This writer has carried out a calculation
very similar to that of Hirschfelder and Linnett (Zoe. cit.) for hydrogen.
He has set up a wave function of the form
a(l)a(l)a(2)P(2)b(3)a(3)b(4)P(4)
X [1 + A (Xa1Xb3 + Xa1Xb4 + Xa2Xb8 + Xa2Xb4 + Ya1Yb3
+ Ya1Yb4 + Ya2Yb3 + Ya2Yb4)
+ B(za1Zb3 + Za1Zb4 + Za2Zb3 + Za2Zb4)J
+ permuted terms (A5-51)
They are all based on the use of average excitation energies, such as we
have set up in Eqs. (A5-20) and (A5-49). The use of such averages was
first suggested by Unsold,5 in a paper in which he discussed the problem
of Ht at large internuclear distances by the perturbation method; this is
a particularly valuable case for investigation by that method, since the
results can be checked against the exact solution. They are discussed,
along with detailed treatments of the general problem of Van der Waals
attractions, in the valuable review article of Margenau. 6
1 F. London, Z. Physik Chem., B11 :222 (1930); Trans. Faraday Soc., 33 :8 (1937).
If we have an atom with N electrons (we shall later discuss the question
as to whether N refers to the total number of electrons, or the number in
the outer shell), we can generalize Eq. (A5-20) to the form
N
(hv/Ry)!v \' (n ) (hv/Ry)
= ~ fni 2 + contr1"b ut10n
· f rom contmuum
· (A5-52)
Let us now take Eq. (A5-41) for the Van der Waals energy, and replace
the double sums by single terms, and the hv's by (hv)av• We then find
6 (IM,12)2
Van der Waals energy = (4no) 2R 6 2(hv)av
3 IM,12a IM 12 (A5-57)
- 2 (47rEo) 2R 6 •
12
Van der Waals energy = - (R/a
0) 6
vJ.l [
N
a
4(47rEo)ag
]½ (A5-58)
where in the derivation of the last equation we have used. Eq. (A5-54).
In Eq. (A5-57) we see an equivalent of Eq. (A5-2), which we had
derived intuitively for the Van der Waals attraction. In Eq. (A5-58) we
have a relation between the polarizability and the Van der Waals energy.
Since the polarizability is known experimentally from the dielectric
constant, this gives a method for computing the Van der Waals attraction
for heavier atoms, for which direct calculation would be difficult. Let us
check this latter equation for the two cases, hydrogen and helium, in
which we have given accurate values in the p~esent chapter. For hydro-
gen, we have a = 4.5(47rto)at from Eq. (AS-31), so that we should predict
that the Van der Waals energy would be
14.32
(A5-59)
(R/ao) 6
Sec. AS-7] POLARIZATION AND VAN DER WAALS ATTRACTION 345
12 - r2 (0 3 7 )H - 3.47 (A,5-60)
(R/ao) 6 V · 4 5 - - (R/ao) 6
(A.5-61)
against using them for any serious calculations. We can, however, con-
sider the question as to whether N in Eqs. (A5-54), (A5-58), and (A5-61)
should refer to the total number of electrons in the atom, or in the outer
shell. In the paper of Slater and Kirkwood (loc. cit.) it was definitely
stated that it should be the number in the outer shell, on the assumption
that the inner shells would not be appreciably polarized. A later paper
of Kirkwood (loc. cit.), however, suggested that it should be the total
number of electrons in the atom. It is generally considered that Kirk-
wood's argument in this paper, which was based on an application of the
variation method, was invalid, and that N should refer to the number of
outer electrons. A simple argument based on Eqs. (A5-52) and (A5-53)
will show why this should be the -case.
In the ground state of a closed-shell atom, such as for instance a neon
atom, there will be excitation energies in which an outer electron is removed
to an excited orbit, in which case the energies hv of excitation lie in the
ultraviolet; there will also be K x-ray excitation, in which the ls electron
is removed. These latter excitations will lie in the soft x-ray region, and
on account of the factor (hv/Ry) 2 in the denominator of Eq. (A5-52),
they will make almost negligible contributions to the sum. In other
words, the terms appreciable in size, in this sum, for any atom, will come
from excitation from the outer shell of electrons (in the case of neon, from
the 2s and 2p shells, which have approximately the same energy). The
sum of the fni's for these ultraviolet excitations will equal approximately
the number of outer electrons, so that it is this number which should be
used as N in Eq. (A5-52), and consequently in the other derivations of
this section.
This is only another way of stating the obvious fact that the contribu-
tion of a shell to the polarizability greatly decreases with decreasing size,
as we pointed out in our discussion of the polarizability of a hydrogenlike
atom with atomic number Z, in Sec. A5-3, where we found the polariza-
bility to go as 1/ Z4, or as the fourth power of the radius of the orbit.
There are numerous other ways of showing the same thing, as has been
pointed out in the literature by several writers.
Before we leave our discussion of polarizability and Van der Waals
energies, there are two further comments to be made. In the first place,
we have seen in Sec. A5-3 that it is possible to get an exact solution of the
problem of the polarizability of hydrogen, since the perturbed wave func-
tion is the sum of the unperturbed function, plus cos (J times a function
of r, which can be exactly determined. It can be shown that the same
sort of discussion can be carried through in a much more general case, as
has been shown by Sternheimer. 1 He has set up differential equations
analogous to Eq. (A5-23), for the general case, in which the nuclear
charge Z must be replaced by a function of r, appropriate to the self-
consistent field used to describe the wave function in question. By
numerical integration of this differential equation, he has been able to
get the functions like v, of Eq. (A5-22), for many ions, and from these
functions has computed the polarizability, getting fairly good agreement
with observations.
For the polarization of orbitals other than s states, the situation is
more complicated. One can show that for an orbital with a given l value,
a constant external field will produce two perturbing terms, one cor-
responding to l + l, the other to l - l, as we should expect from the
selection rule for l. One can set up separate radial differential equations
for each of the resulting functions, and Sternheimer has solved these.
When one combines the results for a closed-shell atom, even though it
contains individual electrons which are not in s states, nevertheless the
result can be described as if we had a many-electron wave function of the
P type, or of L = 1, proportional to the field, superposed on the unper-
turbed S wave function corresponding to the closed shell.
The other general comment which we wish to make is that in Sec.
A5-1 we took up types of interatomic or intermolecular forces, arising
from the polarization of an atom by an ion or by a permanent dipole,
and its reaction back on the ion or permanent dipole producing the
polarization, which are important in the interactions between ions or
dipole molecules. The rest of our discussion has all been devoted to the
special case of the polarization by fluctuating dipoles, resulting in the
Van der Waals attraction between closed-shell atoms, and sometimes
called dispersion forces. These other types of interaction are impor-
tant in themselves, however, and their effects must be added to those
which we have been considering. They are well discussed, among other
places, in the papers of London (lac. cit.) and of l\1argenau (loc. cit.).
They have the effect that the total Van der Waals attractions are con-
siderably greater between molecules with dipole moments than in other
cases. For a discussion of this in a very qualitative way, the reader may
refer to J. C. Slater, "Introduction to Chemical Physics," McGraw-Hill
Book Company, New York, 1939, p. 408. In that reference is given a
table of a large number of gaseous molecules, arranged in order of increas-
ing molecular volume, as measured either by the Van der Waals constant
B, or by the molecular volume of the liquid. As would be expected, the
Van der Waals constant A, measuring the Van der Waals attraction,
increases regularly with increase of B, since we have seen that the
polarizability, on which it depends, increases with molecular dimensions.
There are, however, a number of molecules, such as H2O and NHa, which
stand out from the others as having abnormally large Van der Waals
348 INSULATORS, SEMICONDUCTORS, AND METALS [App. 5
holding for a solid, where p is the pressure, v the volume. We start with
Eq. (2-37) of Volume 1 of this work, which is
Here Xi is one of the coordinates of one of the particles of the system, and
F ext i is the component of external force applied to this coordinate. This
theorem, we remember, holds for a system in which all the internal forces
are Coulomb forces, as in an atom, molecule, or solid.
For a solid of finite volume under a hydrostatic pressure p, each unit
area of the surface is acted on by a normal force p pointing into the volume
of the solid. This force of course is actually exerted by the walls on the
various atoms which happen to be near the unit area in question. We
may then replace the summation over i, in Eq. (A6-2), by a surface
integral over the surface of the solid. An element of area da will con-
tribute to "1;(i)x,F ext, an amount equal to the scalar product of the vector
r from the origin to the element of area (arising from x.) and the external
force acting on the atoms close to this unit area, which is -pn da, where
n is the outer normal to the surface. Hence we have
where the integration is over the surface of the solid. Since the hydro-
static pressure p is assumed to be uniform, we may take it out of the
integral, leaving -pJ(r · n) da.
This integral can be evaluated by the divergence theorem. If we
regard r = ix + jy + kz as a vector function of position, we have
V • r = 3. But the volume integral of the divergence equals the surface
349
350 INSULATORS, SEMICONDUCTORS, AND METALS App. 6]
integral of the normal component of the function itself. That is, we have
JV • r dv = 3v = J(r · n) da (A6-4)
where v .is the volume. As a result we have, combining Eqs. (A6-3)
and (A6-4),
(A6-5)
from which, substituting in Eq. (A6-2), the desired result of Eq. (A6-1)
follows at once.
Bibliography
This Bibliography is by far the longest appearing in any volume of this series. The
primary reason is that it includes experimental as well as theoretical papers, dealing
with energy bands and the Fermi surface, and many related topics. In a great many
of the experimental papers in these fields, the theory is developed or compared with
experiment in such a way that the theorist as well as the experimenter must be
acquainted with the experimental literature. A number of topics are represented in
this Bibliography which were mentioned in the foreword to the Bibliography in
Volume 2: lattice vibrations, conductivity, optical properties, dielectric behavior,
cohesive energy, and the many-body aspects of the theory of solids. Relatively few
topics remain for the Bibliography to appear in Volume 4: among these are magnetic
properties of solids, ligand field theory, excitons, polarons, and other excitations.
This Bibliography, like that in the earlier volumes, includes not merely the papers
and books specifically referred to in the text, but a good many others besides.
In general we have not duplicated references already given in the bibliographies in
"Quantum Theory of Atomic Structure" and in Volumes 1 and 2 of the present work.
The Bibliography consists of three lists. First there is a Book List; it was felt
better to separate the books from the articles. Then we have two bibliographies of
articles, separated chronologically. Bibliography 1 consists of the older papers,
through 1946; Bibliography 2 of the newer ones, 1947 through the present. Coverage
is fairly good up into the 1960s, in some cases as late as 1965, in other cases early 1960s.
Patticularly among the experimental papers, the listing is far from complete; the really
enormous magnitude of the literature has made a complete listing quite impossible.
As in the earlier bibliographies of this series, titles in French and German (and a
few in Spanish) are ordinarily given in the original language, others in English. Cross
references are included to joint authors who are not the first-listed authors, provided
they are also authors of other works listed alphabetically in the Bibliography. Section
numbers in this book are given for locations of papers referred to in the text, so that
the Bibliography can serve as in index of references and names.
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"Inelastic Scattering of Neutrons in Solids and Liquids," International Atomic Energy
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Lewis, G. N., and M. Randall: "Thermodynamics," 2d ed., rev. by K. S. Pitzer and
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354 INSULATORS, SEMICONDUCTORS, AND METALS
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362 INSULATORS, SEMICONDUCTORS, AND METALS
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- - - : Report on the Theory of Semiconductors, Physik. Z. Sowjetunion, 3:507
(1933).
Fox, J. J., and A. E. Martin: The Relation between the Force Constant, Internuclear
Distance, and the Heat of Rupture of a Linkage, J. Am. Chem. Soc., 69:2106
(1938).
Frank, N. H.: Bemerkungen zur Theorie der metallischen Widerstandsanderung in
einem Magnetfeld, Z. Physik, 60:682 (1930). (Sec. 3-10.)
- - - : Zur Theorie der galvanomagnetischen, thermomagnetischen, und thermo-
elektrischen Erscheinungen in Metallen, Z. Physik, 63:596 (1930). (Sec. 2-4.)
366 INSULATORS, SEMICONDUCTORS, AND METALS
Jensen, H.: Die Ladungsverteilung in Ionen und die Gitterkonstante des Rubid-
iumbromids nach der statistischen Methode, Z. Physik, 11:722 (1932). (Sec.
10-1.)
----': t.lber einige fiir die Theorie der Druckverbreiterung von Spektrallinien
wichtige lntegrale, Z. Phyaik, 80:448 (1933).
_____..: t.lber die Giiltigkeit des Virialsatzes in der Thomas-Fermischen Theorie, Z.
Phyaik, 81:611 (1933). (Sec. 10-1.)
- - .-: Zur relativistischen Behandlung des Fermiatoms, Z. Physik, 82:794 (1933).
(Sec. 10-1.)
- - ·: t.lber den Austausch im Thomas-Fermi-Atom, Z. Physik, 89:713 (1932):
93:232 (1934-1935). (Sees. 10-1, 10-2.)
- - : -t.lber die Existenz negativer Ionen im Rahmen des statistischen Modells, Z.
Physik, 101:141 (1936). .(Sec. 10-1.)
- : Quantentheoretische Berechnung der Alkalihalogenidgitter; Z. Physik,
101:164 (1936). (Secs. 10-1, 10-4.)
- - : Eigenschwingungen eines Fermi-Gases und Anwendung auf die Blochsche
Bremsformel'fiir schnelle Teilchen, Z. Phyaik, 106:620 (1937). (Sec. 11-7.)
- - , G. Meyer-Gossler and H. Rohde: Zur physikalischen Deutung der kristal-
lographischen Ionenradien, Z. Phyaik, 110:277 (1938). (Secs. 10-1, 10-4.)
- · - : Das Druck-Dichte-Diagramm der Elemente bei hoheren Drucken am Tem-
peraturnullpunkt, Z. Phyaik, 111:373 (1938). (Secs. 10-1, 10-4.)
Johnson, V. A.: The Mathematical Expression of Charge Distribution in a Space
Lattice, Z. Krillt., 96:493 (1937).
- - - : The Effect of Valence Electrons and Electron Cloud Distortion upon Intensi-
ties in Electron and X-ray Scattering, Applied to Zinc Oxide, Phys. Rev., 67:613
(1940).
- - - : See also H. M. James.
Jones, H.: The Energy of Crystal Lattices, Proc. Roy. Soc. (London), A127:689 (1930).
(Sec. 10-4.)
- - - and C. Zener: A General Proof of Certain Fundamental Equations in the
Theory of Metallic Conduction, Proc. Roy. Soc. (London), A144:101 (1934).
(Sec. Al-1.)
- - - : The Theory of Alloys in the ,--phase, Proc; Roy. Soc. (London), A144:225
(1934). (Secs. 3-li, 10-4.)
- - - and C. Zener: The Theory of the Change in Resists.nee in a Magnetic Field,
Proc. Roy. Soc. (London), A146:268 (1934). (Sec. 3-10.)
- - - : Applications of the ·Bloch Theory to the Study of Alloys and the Properties of
Bismuth, Proc. Roy. Soc. (London), A147:396 (1934). (Sec. 3-11.)
· - - : Application de la theorie electronique des metaux a l'etude des alliages, Helv.
Phys. Acta, 7 (suppl. 2):84 (1934). (Sec. 10-4.)
- - - : The Theory of the Galvanomagnetic Effects in Bismuth, Proc. Roy. Soc.
(London), A166:653 ·(1936). (Secs. 2-4, 3-11.)
---and N. F. Mott: The Electronic Specific Heat and X-ray Absorption of Metals,
and Some Other Properties Related to Electron Bands, Proc. Roy. Soc. (London),
A162:49 (1937).
- - - : The Phase Boundaries in Binary Alloys. I. The Equilibrium between
Liquid and Solid Phases, Proc. Phys. Soc. (Lcmdon), 49:243 (1937).
Jordan, P.: Bemerkung iiber einen Zusammenhang zwischen Duanes Quantentheorie
der Interferenz und den de Broglieschen Wellen, Z. Physik, 37:376 (1926).
- - - : Zur Quantenmechanik der Gasentartung, Z. Physik, 44:473 (1927).
Kallmann, H., and H. Mark: t.lber die anomale Dispersion im Gebiet der Rontgen-
strahlen, N aturwiss., 14 :648 (1926).
372 INSULATORS, SEMICONDUCTORS, AND METALS
Patterson, A. L.: Fourier Series Method for the Determination of the Components of
Interatomic Distance in Crystals, Phys. Rev., 46:372 (1934).
- - - : A Direct Method for the Determination of the Components of Interatomic
Distances in Crystals, Z. Krist., 90 :517 (1935).
Pauli, W., Jr.: Theoretische Bemerkungen iiber den Diamagnetismus einatomiger
Gase, Z. Physik, 2:201 (1920).
- - - : Uber Gasentartung und Paramagnetismus, Z. Physik, 41 :81 (1927).
- - - : Einige die Quantenmechanik betreffende Erkundigungsfragen, Z. Physik,
80:573 (1933).
Pauling, L.: Note on the Pressure Transition of the Rubidium Halides, Z. Krist.,
69:35 (1928).
- - - : Photo-ionization in Liquids and Crystals and the Dependence of the Fre-
quency of X-ray Absorption Edges on Chemical Constitution, Phys. Rev., 34:954
(1929).
- - - : Rotational Motion of Molecules in Crystals, Phyb. Rev., 36:430 (1930).
- - - and J. Y. Beach: Van der Waals Interaction of Hydrogen Atoms, Phys. Rev.,
47:686 (1935). (Secs. A5-4, A5-7.)
- - - : Diamagnetic Anisotropy of Aromatic Molecules, J. Chem. Phys., 4:673 (1936).
Peierls, R.: Zur Theorie der galvanomagnetischer Effekte, Z. Physik, 53:255 (1929).
(Sec. 2-4.)
- - - : Zur kinetischen Theorie der Wiirmeleitung in Kristallen, Ann. Physik, 3:1055
(1929). (Sec. 7-2.)
- - - : Zur Theorie der elektrischen und thermischen Leitfiihigkeit von Metallen,
Ann. Physik, 4:121 (1930).
- - - : Zwei Bemerkungen zur Theorie der Leitfiihigkeit, Ann. Physik, 5:244 (1930).
- - - : Das Verhalten metallischer Leiter in starken Magnetfeldern, Leipziger
Vortrage, 1930, S. Hirzel Verlag KG, Leipzig, p. 75. (Sec. 3-10.)
- - - : Zur Theorie der magnetischen Widerstandsiinderung, Ann. Physik, 10:97
(1931). (Sec. 3-10.)
- - - : Zur Frage des elektrischen Widerstandgesetzes fiir tiefe Temperaturen, Ann.
Physik, 12:154 (1932).
- - - : Zur Theorie der Absorptionsspektren fester Ki:irper, Ann. Physik, 13:905
(1932). (Sec. 5-5.)
- - - : Zur Theorie des Diamagnetismus von Leitungselektronen. I. II. Starke
Magnetfelder, Z. Physik, 80:763 (1933); 81 :186 (1933). (Sec. 3-9.)
- - - : Bemerkungen zur Theorie der Metalle, Z. Physik, 88:786 (1934).
- - - : Vber die statistischen Grundlagen der Elektronentheorie der Metalle, Helv.
Phys. Acta, 7 (suppl. 2) :24 (1934).
- - - : Statistical Theory of Superlattices with Unequal Concentrations of the Com-
ponents, Proc. Roy. Soc. (London), A154:207 (1936).
Peterson, E. L., and L. W. Nordheim: Resistance of Monovalent Metals, Phys. Rev.,
51 :355 (1937).
Power, S. C.: On the Stability of Crystal Lattices. VII. Long-wave and Short-wave
Stability for the Face-centered Cubic Lattice, Proc. Cambridge Phil. Soc., 38:61
(1942). (Sec. 10-4.)
Prins, J. A.: The Total Reflection of X-rays, Nature, Aug. 6, 1927. (Sec. 5-5.)
- - - : tl"ber die Dispersion und Absorption von Ri:intgenstrahlen, Z. Physik, 47:479
(1928). (Sec. 5-5.)
- - - : Die Reflexion von Ri:intgenstrahlen an absorbierenden idealen Kristallen,
Z. Physik, 63:477 (1930). (Sec. 5-5.)
- - - : Bemerkung zu einer Arbeit von F. Jentzsch und H. Stops: "Die Winkel-
abhiingigkeit des Brechungsindex bei Ri:intgenstrahlen," Z. Physik, 92:690 (1934).
(Sec. 5-5.)
BIBLIOGRAPHY BOOK LIST 379
- - - : The Structure of the Helium Atom, I, Proc. Natl. Acad. Sci. U.S., 13:423
(1927). (Sec. 11-4.)
- - - : Normal State of Helium, Phys. Rev., 32:349 (1928). (Sec. A5-6.)
- - - : Cohesion in Monovalent Metals, Phys. Rev., 35:509 (1930). (Sec. 10-4.)
- - - and J. G. Kirkwood: Van der Waals Forces in Gases, Phys. Rev., 37:682 (1931).
(Secs. A5-3, A5-7.)
- - - : Quantum Theory of the Equation of State, Phys. Rev., 38:237 (1931). (Sec.
10-4.)
- - - : The Electron Theory of Metallic Conduction, Science, 77:595 (1933).
- - - : Electronic Structure of Metals, Rev. Mod. Phys., 6:209 (1934). (Secs. 10-1,
10-4.)
- - - and H. M. Krutter: The Thomas-Fermi Method for Metals, Phys. Rev., 47:559
(1935). (Sec. 10-1.)
- - - and W. Shockley: Optical Absorption by the Alkali Halides, Phys. Rev., 50:705
(1936). (Secs. 3-11, A2-l.)
----: Electrodynamics of Ponderable Bodies, J. Franklin Inst., 225:277 (1938).
- - - : Excited Energy Levels of Insulating Crystals, Trans. Faraday Soc., 34:828
(1938). (Sec. 5-5.)
- - - : Note on Grtineisen's Constant for the Incompressible Metals, Phys. Rev.,
57:744 (1940). (Sec. 10-4.)
- - - : Theory of the Transition in KH2PO,, J. Chem. Phys., 9:16 (1941). (Sec. 8-5.)
- - - : See also E. Rudberg.
Smith, R. A.: The Effect of Exchange on the Polarization of Electrons by Double
Scattering, Proc. Cambridge Phil. Soc., 30:520 (1934).
Sommerfeld, A.: Zur Elektronentheorie der Metalle, Naturwiss., 41:825 (1927).
- - - : Zur Elektronentheorie der Metalle auf Grund der Fcrmischen Statistik, Z.
Physik, 47:1 (1928). (Sec. 1-4.)
- - - : Zur Elektronentheorie der Metalle auf Grund der Fermischen Statistik. II.
Thermo-elektrische, galvanomagnetische, und thermomagnetische Vorgange, Z.
Physik, 47:43 (1928). (Sec. 2-4.)
- - - and N. H. Frank: Statistical Theory of Thermoelectric, Galvanoelectric and
Thermomagnetic Phenomena in Metals, Rev. Mod. Phys., 3:1 (1931). (Sec. 2-4.)
- - - and H. Bethe: Elektronentheorie der Metalle, "Handbuch der Physik," 2d
ed., vol. 24, pt. 2, Springer-Verla~ OHG, Berlin, 1933.
- - - : Concerning the Thermoelectric Effects of the Alkalies, Phys. Rev., 46:65 (1934).
- - - and B. W. Bartlett: -Uber die longitudinale Widerstandsanderung im Magnet-
felde nach der elementaren Theorie, Physik. Z., 36:894 (1935). (Sec. 3-10.)
Sponer, H., and M. Bruch-Wilstatter: The Lattice Energy of Solid CO2, J. Chem. Phys.,
5:745 (1937). (Sec. 10-4.)
Stueckelberg, E. C. G., and P. M. Morse: Die spezifische Warme von quasi-freien
Elektronen, Z. Physik, 69:666 (1931).
Sugiura, Y.: Sur le nombre des electrons de dispersion pour Jes spectres con tin us et
pour !es spectres de series de l'hydrogene, J. Phys. Radium, 8:113 (1927). (Sec.
A5-2.)
Szigeti, B.: Polarizability and Dielectric Constant of Ionic Crystals, Trans. Faraday
Soc., 46:155 (1935). (Sec. 8-6.)
Tamm, I., and D. Blochinzev: tlber die Austrittsarbeit der Elektronen aus Metallen,
Z. Physi"k, 77:774 (Hl32).
Taylor, G. I.: Plastic Deformation of Crystals, Proc. Roy. Soc. (London), A146:362
(1934). (Sec. 10-4.)
- - --: Strength of Rock-salt, Proc. Roy. Soc. (London), A145:405 (1934). (Sec.
10-4.)
BIBLIOGRAPHY BOOK LIST 381
Wentzel, G.: Zwei Bemerkungen ilber die Zerstreuung korpuskularer Strahlen als
Beugungserscheinungen, Z. Phy8ik, 40:590 (1927).
- : Zur Theorie des Comptoneffekts, Z. Phyirik, 48:1 (1927). (Sec. 1-5:)
- : tlber strahlungslose Quantenspriinge, Z. Phyirik, 48:524 (1927).
- : Zur Theorie des Comptoneffekts, II, Z. Phyirik, 48:779 (1927). (Sec. 1-5.)
- . : tlber den Riickstoss beim Comptoneffekt am Wasserstoffatom, Z. Phyirik,
68:348 (1929). (Sec. 1-5.)
- : Wellenmechanik der Stoss-und Strahlungsvorgli.nge, "Handbuch der Physik,"
2d ed., vol. 24/1, Springer-Verlag OHG, Berlin, 1933, p. 695.
West, J.: A Quantitative X-ray Analysis of the Structure of Potassium Dihydrogen
Phosphate KH2PO., Z. Kri8t., 74:306 (1930). (Sec. 8-5.)
- : See also W. L. Bragg.
Wigner, E.: tlber die elastische Eigenschwingungen symmetrischer Systeme, Gott.
Nachr., 1930, p. 133. (Sec. 8-6.) ·
- - - and F. Seitz: On the Constitution of Metallic Sodium, Phys. Rev., 48:804
(1933); 46:509 (1934). (Secs. 10-2, 10-3, 11-4.)
- - - : On the Interaction of Electrons in Metals, Phys. Rev., 46:1002 (1934). (Secs.
10-3, 10-4, 11-4.)
- - - and J. Bardeen: Theory of the Work Functions of Monovalent Metals, Phys.
Rev., 48:84 (1935).
- - - and H. B. Huntington: On the Possibility of a Metallic Modification of
Hydrogen, J. Chem. Phy8., 8:764 (1935). (Sec. 10-4.)
- - - : On the Constant A in Richardson's Equation, Phys. Rev., 49:696 (1936).
- - : Effects of the Electron Interaction on the Energy Levels of Electrons in
Metals, Tram. Faraday Soc., 84:678 (1938). (Secs. 10-3, 10-4.)
Williams, E. J.: The Compton Effect and the Reflection of X-rays by Crystals, Phil.
Mag., 2:657 (1926). (Sec. 1-5.)
- - : Anomalous Dispersion and Absorption of X-rays, Proc. Roy. Soc. (London),
A148:358 (1934). (Sec. 5-5.)
- - - : Application of Ordinary Space-Time Concepts in Collision Problems and
Relation of Classical Theory to Born's Approximation, Rev. Mod. Phys., 17:217
(1945).
- - : See also W. L. Bragg.
Wilson, A. H.: A Note on the Theory of Rectification, Proc. Roy. Soc. (London},
A186:487 (1932).
- - - : The Electrical Properties of Semiconductors and Insulators, Actualite8 Sci. et
Ind., 82, 1934.
- - - : The Optical Properties of Solids, Proc. Roy. Soo. (London), A161:274 (1935).
(Sec. 5-5.)
- - - : The Second Order Electrical Effects in Metals, Proc. Cambridge Phil. Soc.,
88:371 (1937).
- - - : 'l'he Electrical Conductivity of the Transition Metals, Proc. Roy. Soc. (London),
A167:580 (1938).
Winter, J.: Sur la polarisation des ondes de Dirac, Compt. Rend., 202:1265 (1936).
- - - : Sur la diffusion des ondes de Dirac, Compt. Rend., 202:1416 (1936).
Witmer, E., and L. Rosenfeld: tlber die Beugung von de Broglischen Wellen an
Kristallgittern, Z. Phyirik, 48:530 (1928).
Woo, Y. H.: The Scattering of X-rays by Gases and Crystals, Phys. Rev., 41:21 (1932).
Wood, R. W.: Remarkable Optical Properties of the Alkali Metals, Phys. Rev., 44:353
(1933). (Secs. 5-3, 5-5.)
- - - and C. Lukens: Optical Properties of the Alkali Metals, Phys. Rev., 64:332
(1938). (Secs. 5-3, 5-5.)
384 INSULATORS, SEMICONDUCTORS, AND METALS
Akao, H., and T. Sasaki: Dielectric Dispersion of Rochelle Salt in the Microwave
Region, J. Chem. Phys., 23:2210 (1955). (Sec. 8-5.)
Akhiezer, A. J., and R. V. Polovin: On the Theory of Wave Motion of an Electron
Plasma, Zh. Eksperim. i Teor. Fiz., 30:915 (1956). (Sec. 11-7.)
- - - , M. I. Kaganov, and G. Ya. Lyubarskii: Ultrasonic Absorption in Metals,
Zh. Eksperim. i Teor. Fiz., 32:837 (1957). (Sec. 3-9.)
---and V. G. Baryakhtar: Theory of Heat Conductivity in Ferro-dielectric Mate-
rials at Low Temperature, Fiz. Tverd. Tela, 2:2439°(1960).
Akramov, G.: Resonance Damping of Sound in Metals in a Magnetic Field, Fiz.
Tverd. Tela, 6:1310 (1963). (Sec. 3-9.)
Akulov, N. S.: Contribution to the Theory of Ferroelectric Polarization Curves, Zh.
Eksperim. i Teor. Fiz., 36:1085 (1959). (Sec. 8-5.)
Alder, B. J., and R.H. Christian: Destruction of Diatomic Bonds by Pressure, Phys.
Rev. Letters, 4:450 (1960). (Sec. 10-4.)
Aleksandrov, K. S.: Propagation of Elastic Waves in Special Directions in Crystals,
Kristallografiya, 1 :718 (1956). (Sec. 8-6.)
- - - : Propagation of Elastic Shear Waves in a Crystal Twisted about a Special
Direction, Kristallografiya, 2:140 (1957). (Sec. 8-6.)
Alekseevskii, N. E., N. B. Brandt, and T. I. Kostina: Investigation of the Effect of
Pressure on the Galvanomagnetic Properties of Tellurium at Low Temperatures,
Zh. Eksperim. i Teor. Fiz., 31:943 (1956). (Secs. 2-4, 3-11.)
- - - , - - - , a n d - - - : On the Anomalous Galvanomagnetic Propertie!\.of Met-
als at Low Temperatures, Zh. Eksperim. i Teor. Fiz., 34:1339 (1958).
(Sec. 2-4.)
- - - and Yu. P. Gaidukov: Anisotropy of the Electrical Resistance of a Gold
Monocrystal in a Magnetic Field at 4.2°K, Zh. Eksperim. i Teor. Fiz., 36:554
(1958). (Secs. 3-10, 3-11.)
- - - and - - - : Measurement of the Electrical Conductivity of Metals in a
Magnetic Field as a Method for Investigation of the Fermi Surface, Zh. Eksperim.
i Teor. Fiz., 36:447 (1959). (Sec. 3-10.)
- - - and - - - : The Anisotropy of Magnetoresistance and the Topology of the
Fermi Surfaces of Metals, Zh. Eksperim. i Teor. Fiz., 37:672 (1959). (Sec. 3-10.)
- - - , - - - , I . M. Lifshits, and V. G. Peschanskii: The Fermi Surface of Tin, Zh.
Eksperim. i Teor. Fiz., 39:1201 (1960). (Sec. 3-11.)
- - - and---: Fermi Surface of Lead, Zh. Eksperim. i Teor. Fiz., 41:354 (1961).
(Sec. 3-11.)
- - - and---: The Fermi Surface for Tin, Zh. Eksperim. i Teor. Fiz., 41:1079
(1961). (Sec. 3-11.)
- - - and---: Fermi Surface in Silver, Zh. Eksperim. i Teor. Fiz., 42:69 (1962).
(Sec. 3-11.)
- - - and - - : Open Cross-Sections of Cadmium, Zinc, and Thallium Fermi Sur-
faces, Zh. Eksperim. i Teor. Fiz., 48:2094 (1962), 44:1421 (1963). (Secs. 3-10,
3-11.)
Alers, G. A., and P. A. Fleury: Modification of Velocity of Sound in Metals by Mag-
netic Field, Phys. Rev., 129:2425 (1963).
- - - and R. T. Swim: Oscillations in the Velocity of Sound in Gold at High Magnetic
Fields, Phys. Rev. Letters, 11:72 (1963). (Sec. 3-11.)
Alers, P. B., and R. T. Webber: Magnetoresistance of Bismuth Crystals at Low Tem-
peratures, Phys. Rev., 91:1060 (1953). (Secs. 3-10, 3-11.)
- - - : Thermal Magnetoresistance of Zinc at Low Temperatures, Phys. Rev., 101:41
(1956). (Secs. 3-10, 3-11.)
- - - : De Haas-van Alphen Oscillations in the Thermal and Electrical Magnetore-
sistance of Tin, Phys. Rev., 107:959 (1957). (Secs. 3-9, 3-10, 3-11.)
BIBLIOGRAPHY BO.OK,: LIST 387
Anderson, J. R., and A. V. Gold: De Haas-van Alphen Effect and Internal Field in
Iron, Phys. Rev. LetterB, 10:227 (1963). (Secs. 3-9, 3-11.)
Anderson, P. W.: Electromagnetic Theory of Cyclotron Resonance in Metals, Phys.
Rev., 100:749 (1955). (Sec. 3-8.)
Andrew, E. R.: The Size-variation of Resistivity for Mercury and Tin, Proc. Phys. Soc.
(London), A62:77 (1949). (Secs. 3-11, 5-1.)
Anex, B. G., and W. T. Simpson: Metallic Reflection for Molecular Crystals, Rev.
Mod. Phys., 32:466 (1960). (Sec. 5-5.)
Anselm, A. I.: Some Problems of the Electron Theory of Crystals, Zh. Tekhn. Fiz.,
21 :489 (1951).
- - - and Yu. L. Rabotnikov: The Effect of Anharmonicity on Vibrations and Waves
in Crystal (Linear Atomic Chain), Zh. Tekhri. Fiz., 27:1723 (1957). (Sec. 8-6.)
- - - and I. G. Lang: The Theory of Two-phonon Scattering of Conduction Elec-
trons in Atomic Crystals, Fiz. Tverd. Tela, 1:683 (1959).
- - - and B. M. Askerov: Thermomagnetic Phenomena in Semimetals in a Strong
Magnetic Field, Fiz. Tverd. Tel,a, 2:2310 (1960). (Sec. 2-4.)
- - - and - - - : The Chemical Potential and the Criterion for Degeneracy of the
Conductivity Electrons in a Strong Magnetic Field, Fiz. Tverd. Tela, 2 :2821
(1960).
- - - and - - - : Thermomagnetic Phenomena in Semiconductors in a Strong
Magnetic Field for the Case of Electron Scattering by a Short-range Potential,
Fiz. Tverd. Tela, 3:3668 (1961). (Sec. 2-4.)
- - - and - - - : Longitudinal Thermomagnetic Effects in Semiconductors in a
Strong Longitudinal Magnetic Field, Fiz. Tverd. Tela, 4:1573 (1962).
Antoncik, E.: On the Theory of Temperature Shift of the Absorption Curve in Non-
polar Crystals, Czech. J. Phys., 6:449 (1955). (Sec. 5-5.)
- - - : See also J. Tauc.
Apker, L., and E. Taft: Photoelectric Emission from F-centers in KI, PhyB. Rev.,
79:964 (1950). (Secs. 3-10, 3-11.)
- - - and---: Energy Distribution of External Photoelectrons from F-centers
in RbI, Phys. Rev., 82:814 (1951). (Secs. 3-10, 3-11.)
- - - , - - - , a n d J. Dickey: On the Photoelectric Emission and Energy Structure
of BaO, Phys. Rev., 84:508 (1951). (Secs. 3-10, 3-11.)
- - - : See also E. Taft.
Appel, J.: Der Einfluss der Bahn-Quantisierung im Magnetfeld auf die Fermische
Grenzenergie von Halbleitern, I, Z. NaturjorBch., lla:689 (1956). (Sec. 3-9.)
- - - : Die Thermokraft von nichtpolaren Halbleitern, Z. Naturforsch., 12a:410
(1957).
- - - : Theorie der thermagnetischen Effekte von nichtpolaren isotropen Halbleitern,
Z. Naturforsch., 13a:386 (1958). (Sec. 2-4.)
- - - : Transporterscheinungen in elastisch anisotropen Metallen, Z. Naturforsch.,
14a:379 (1959).
- - - : Theory of Thermoelectric and Thermomagnetic Effects in Nonpolar Isotropic
Semiconductors, J. Phys. Chem. Solids, 8:353, 361 (1959). .(Sec. 2-4.)
Arai, T.: Plasma Oscillations in Heavily Doped n-type Silicon, Proc. Phys. Soc.
(London), 84:25 (1964). (Sec. 11-7.)
- - - : Cluster Expansion in the Heitler-London Approach to Many-electron Prob-
lems, PhyB. Rev., 134:A824 (1964). (Sec. 11-7.)
Argyres, P. N., and E. N. Adams: Longitudinal Magnetoresistance in the Quantum
Limit, PhyB. Rev., 104:900 (1956). (Sec. 3-10.)
- - - : Quantum Theory of Galvanomagnetic Effects, Phys. Rev., 109:1115 (1958).
(Sec. 2-4.)
BIBLIOGRAPHY BOOK LIST 389
Authier, A.: Theoretical and Experimental Study of the Temperature Factor and of
Extinction in Zinc Blende, Acta Crysta, 9:411 (1956).
Ayant, Y., B. Dreyfus, and J. Beretti: Chaleur specifique d'un reseau tridimensionnel
d'oscillateurs, Compt. Rend., 244::1898 (1957). (Sec. 8-6.)
Azbel, M. Ya.: Conductivity of Films in a Longitudinal Magnetic Field, Dokl. Akad.
Nauk SSSR, 99:519 (1954).
- - - and E. A. Kaner: The Anomalous Skin Effect with Arbitrary Collision Integral,
Zh. Eksperim. i Teor. Fiz., 29:876 (1955). (Sec. 5-1.}
- - - and---: Theory of Cyclotron Resonance in Metals, Zh. Eksperim. i Teor.
Fiz., 30:811 (1956). (Sec. 3-8.)
- - - and---: Theory of Cyclotron Resonance in Metals, Zh. Eksperim. i Teor.
Fiz., 32:896 (1957). (Sec. 3-8.)
- - - , M. I. Kaganov, and I. M. Lifshits: Thermal Conductivity and Thermoelectric
Phenomena in Metals in a Magnetic Field, Zh. Eksperim. i Teor. Fiz., 32:1188
(1957).
- - - : Concerning the Synthesis of the Shape of the Fermi Surface in Metals, Zh.
Eksperim. i Teor. Fiz., 34:754 (1958).
- - - : Contribution to the Theory of Surface Impedance of Metals in Anomalous
Skin Effect, Zh. Eksperim. i Teor. Fiz., 34:766 (1958). (Sec. 5-1.)
- - - : Quantum Theory-of High-frequency Conductivity of Metals, Zh. Eksperim. i
Teor. Fiz., 34:969 (1958). (Sec. 5-1.)
- - - : Quantum Oscillations of High-Frequency Surface Impedance, Zh. Eksperim. i
Teor. Fiz., 34:1158 (1959). (Sec. 5-1.)
- - - and E. A. Kaner: Cyclotron Resonance in Metals, J. Phys. Chem. Solids,
6:113 (1958). (Sec. 3-8.)
- - - : The Quantum Theory of the High Frequency Surface Impedance of a Metal, ·
J. Phys. Chem. Solids, 7:105 (1958). (Sec. 5-1.)
- - - and E. A. Kaner: The Experimental Study of Cyclotron Resonance in Metals,
Zh. Eksperim. i Teor. Fiz., 39:80 (1960). (Sec. 3-8.)
- - - : A New Resonance Effect in Metals at High Frequencies, Zh. Eksperim. i
Teor. Fiz., 39:400 (1960).
- - - : Quantum Oscillations of Thermodynamic Properties for an Arbitrary Fermi
Surface, Zh. Eksperim. i Teor. Fiz., 39:878 (1960).
- - - : On the Possibility of Determining the Correlation Function for a Fermi
Liquid in Metals, Zh. Eksperim. i Teor. Fiz., 39:1138 (1960).
- - - and G. A. Begiashvili: The Width of the Cydotron Resonance Line in Semi-
metals and the Determination of the Correlation Function for Bismuth, Zh.
Eksperim. i Teor. Fiz., 42:640 (1962). (Secs. 3-8, 3-11.)
- - - and R. N. Gurzhi: The Electrical Conductivity of Thin Samples and the
Possibility of Determining the Mean Free Path of Electrons in Metals, Zh.
Eksperim. i Teor. Fiz., 42:1362 (1962). (Sec. 5-1.)
- - - : Combined Resonance in Metals, Fiz. Tverd. Tela, 4:568 (1962).
- - - : Quantization of Quasi-particles with a Periodic Dispersion Law in a Strong
Magnetic Field, Zh. Eksperim. i Teor. Fiz., 44:980 (1963).
- - - : See also R. N. Gurzhi, M. I. Kaganov, E. A. Kaner, I. M. Lifshits.
Azuma, M.: Effect of the Lattice on the Internal Dielectric Constant, J. Phys. Soc.
Japan, 18:194 (1963). (Sec. 8-6.)
Babiskin, J.: Oscillatory Galvanomagnetic Properties of Bismuth Single Crystals
in Longitudinal Magnetic Fields, Phys. Rev., 107:981 (1957). (Secs. 2-4,
3-11.}
---and P. G. Siebenmann: New Type of Oscillatory Magnetoresistance in Metals,
Phys. Rev., 107:1245 (1957). (Sec. 3-10.)
BIBLIOGRAPHY BOOK LIST 391
- : See also M. C. Steele.
Bacon, G. E., and R. S. Pease: Neutron Diffraction Study of Potassium Dihydrogen
Phosphate by Fourier Synthesis, Proc. Roy. Soc. (London), A220 :397 (1953).
(Secs. 8-1, 8-5.)
- and K. Lonsdale: Neutron Diffraction, Rept. Progr. Phys., 16:1 (1953).
(Sec. 8-1.)
- - - : Etudes de structures moleculaires par diffraction des neutrons, J. Chim. Phys.,
61:D65 (1954). (Sec. 8-1.)
- - - and R. S. Pease: A Neutron Diffraction Study of the Ferroelectric Transition
in Potassium Dihydrogen Phosphate, Proc. Roy. Soc. (London), A230:359 (1955).
(Secs. 8-1, 8-5.)
- - - : See also R. S. Pease.
Bacon, M. D., P. Dean, and J. L. Martin: Defect Modes in Two-component Chains,
Proc. Phys. Soc. (London), 80:174 (1962). (Secs. 8-6.)
- - - : See also P. Dean.
Bade, W. L.: Drude-model Calculation of Dispersion Forces. I. General Theory,
J. Chem. Phys., 27:1280 (1957). (Sec. A5-7.)
- - - and J. G. Kirkwood: Drude-model Calculation of Dispersion Forces. II.
The Linear Lattice, J. Chem. Phys., 27:1284 (1957). (Sec. A5-7.)
- - - : Drude-model Calculation of Dispersion Forces. III. The Fourth-order Con-
tribution, J. Chem. Phys., 28:282 (1958). (Sec. A5-7.)
Baer, W. S., and R. N. Dexter: Electron Cyclotron Resonance in CdS, Phys. Rev.,
136:Al388 (1964). (Secs. 3-8, 3-11.)
Bagguley, D. M. S., J. A. Powell, and D. J. Taylor: Cyclotron Resonance over a Wide
Temperature Range, Proc. Phys. Soc. (London), A70:759 (1957). (Sec. 3-8.)
- - - and J. Owen: Microwave Properties of Solids, Rept. Progr. Phys., 20:304
(1957).
- - - : Electron-Phonon Interactions, Nature, 186:586 (1960). (Sec. 8-6.)
- - - , R. A. Stradling, and J. S. Whiting: Cyclotron Resonance over a Wide Tem-
perature Range. I. Germanium. II. Silicon, Proc. Roy. Soc. (London), A262:340,
365 (1961). (Secs. 3-8, 3-11.)
- - - and - - - : Cyclotron Resonance at 4 Mm Wavelength, Proc. Phys. Soc.
(London), 78:1078 (1961). (Sec. 3-8.)
- - - , M. L.A. Robinson, and R. A. Stradling: Cyclotron Resonance in p-type InSb
at Millimeter Wavelengths, Phys. Letters, 6:143 (1963). (Secs. 3-8, 3-11.)
Bailin, M.: Transport in Metals: Effect of the Non-equilibrium Phonons, Phys. Rev.,
112:1587 (1958).
- - - : Exchange and Correlation Effects in Electron-Phonon Scattering in Normal
Metals, Phys. Rev., 117:974 (1960).
Bak, T. A., M. Goche, and F. Benin: On the Motion of a Particle Coupled to Lattice
Vibrations, Mol. Phys., 2:181 (1959). (Sec. 8-6.)
Baker, G. A., Jr., B. J. Hill, and R. J. McKee, Jr.: Study of the Perturbation Series for
the Ground State of a Many-fermion System, Phys. Rev., 136:A922 (1964).
(Sec. 11-7.)
Balazs, N. L.: Thermal Fluctuations in Conductors, Phys. Rev., 106:896 (1957).
- - - : Thomas-Fermi Theory of the Atom as a Solution of the Density-matrix
Hierarchy, Phys. Rev., 134:A841 (1964).
- - - and R. A. Mould: Thomas-Fermi Theory of Excited Atomic States, Phys. Rev.,
136:A1560 (1964).
Baichan, A. S., and H. G. Drickamer: Effect of High Pressure on the Resistance of
Iodine and Selenium, J. Chem. Phys., 34:1948 (1961). (Sec. 3-11.)
- - - : See also H. L. Suchan.
392 INSULATORS, SEMICONDUCTORS, AND METALS
Iodide and Sodium Iodide between 2.8 and 270°K. II. Analysis of Experimental
Results, Proc. Roy. Soc. (London), A242:467, 478 (1957). (Sec. 8-6.)
Berghuis, J., J. Haanappel, M. Potters, B. 0. Loopstra, C.H. MacGillavry, and A. L.
Veenendaal: New Calculations of Atomic Scattering Factors, Acta Cryst., 8:478
(1955). (Sec. 6-2.)
Berglund, C. N., and W. E. Spicer: Photoemission Studies of Copper and Silver-
Theory, Phys. Rev., 136:A1030 (1964). (Secs. 3-10, 3-11.)
- - - and---: Photoemission Studies of Copper and Silver: Experiment, Phys.
Rev., 136:Al044 (1964). (Secs. 3-10, 3-11.)
- - - : See also W. E. Spicer.
Berlincourt, T. G.: De Haas-van Alphen Effect in Cadmium, Phys. Rev., 94:1172
(1954). (Secs. 3-9, 3-11.)
- - - and M. C. Steele: Temperature-dependent de Haas-van Alphen Parameters
in Zinc, Phys. Rev., 95:1421 (1954). (Secs. 3-9, 3-11.)
- - - and---: Oscillatory Hall Effect, Magnetoresistance, and Magnetic Suscepti-
bility of a Graphite Single Crystal, Phys. Rev., 98:956 (1955). (Secs. 2-4, 3-10,
3-11.)
- - - : De Haas-van Alphen Effect in Arsenic, Phys. Rev., 99:1716 (1955). (Secs.
3-9, 3-11.)
- - - : Hall Effect, Magnetoresistance, and Size Effects in Copper, Phys. Rev.,
112:381 (1958). (Secs. 2-4, 3-10, 3-11.)
- - - : See also W. C. Overton, Jr., A. C. Thorsen.
Berman, R.: The Thermal Conductivity of Dielectric Solids at Low Temperatures,
Adv. Phys., 2:103 (1953).
- - - , E. L. Foster, and J. M. Ziman: The Thermal Conductivity of Diefectric
Crystals: The Effect of Isotopes, Proc. Roy. Soc. (London), A237:344 (1956).
- - - , P. T. Nettley, F. W. Sheard, A. N. Spencer, R. W. H. Stevenson, and J. M.
Ziman: The Effect of Point Imperfections on Lattice Conduction in Solids, Proc.
Roy. Soc. (London), A253:403 (1959).
Bernard, W., H. Roth, and W. D. Straub: Galvanomagnetic Studies of Degenerate
Gallium-doped Germanium: Nonparabolic Energy Bands with Variable Warping,
Phys. Rev., 132:33 (1963). (Secs. 2-4, 3-11.)
- - - , - - - , - - - , and J. E. Mulhern, Jr.: De Haas-van Alphen Oscillations in
the Magnetoresistance of Heavily Doped Germanium, Phys. Rev., 135:A1386
(1964). (Secs. 3-10, 3-11.)
Bernstein, I. B.: Waves in a Plasma in a Magnetic Field, Phys. Rev., 109:10 (1958).
Berz, F.: On the Theory of Plasma Waves, Proc. Phys. Soc. (London), B69:939 (1956).
(Sec. 11-7.)
- - - : On the Theory of Surface Recombination in Semiconductors for Large Poten-
tial Differences between Surface and Bulk, Proc. Phys. Soc. (London), 71 :275
(1958).
Bess, L.: Possible Mechanism for Radiationless Recombinations in Semiconductors,
Phys. Rev., 105:1469 (1957).
Best, P. E.: The Characteristic Electron Energy Loss Spectra of Some Alkali Halides,
Proc. Phys. Soc. (London), 79:133 (1962). (Sec. 5-3.)
- - - : Characteristic Energy Losses in Compounds, Proc. Phys. Soc. (London),
80:1308 (1962). (Sec. 5-3.)
- - - : See also J. D. Robins.
Betts, D. D., A. B. Bhatia, and M. Wyman: Houston's Method and Its Application
to the Calculation of Cha.ractcristic Temperatures of Cubic Crystals, Phys. Rev.,
104:37 (1956). (Sec. 8-6.)
BIBLIOGRAPHY BOOK LIST 397
Brailsford, A. D.: The Magnetic Energy Levels of Electrons in Metals, Proc. Phys.
Soc. (London), A70:275 (1957).
- - - and A. W. Overhauser: Theory of the Resistance Minimum in Dilute Para-
magnetic Alloys, Phys. Rev. Letters, 3:331 (1959). ··i
- - - and - - - : Theory of the Resistance Minimum in Dilute Paramagnetic ',
Alloys, J. Phys. Chem. Solids, 15:140 (1960). .
- - - : See also W. S. Boyle, J. K. Galt. • '>
Brandt, G. B., and J. A. Rayne: The Electronic Structure of Chromium-group Metals i
from Low Field de Haas-van Alphen Studies, Phys. Letters, 3:148(1962). (Secs.
3-9, 3-11.)
- - - and - - - : Low-field de Haas-van Alphen Effect in Indium, Phys. Rev.,
132:1512 (1963). (Secs. 3-9, 3-11.)
- - - and - - - : Low-field de Haas-van Alphen Studies of Chromium Group
Transition Elements, Phys. Rev., 132:1945 (1963). (Secs. 3-9, 3-11.)
Brandt, N. B., and G. A. Ryabenko: Effect of Uniaxial Compression on the Quantum ,',J
Oscillations of the Magnetic Susceptibility of Bismuth, Zh. Eksperim. i Teor.
Fiz., 37:389 (1959). (Secs. 3-9, 3-11.)
- - - , A. E. Dubrovskaya, and G. A. Kytin: An Investigation of the Quantized
Oscillations in the Magnetic Susceptibility of Bismuth at Extremely Low Tempera-
tures, Zh. Eksperim. i Teor. Fiz., 37:572 (1959). (Secs. 3-9, 3-11.)
- - - : The Hole Part of the Fermi Surface in Bismuth, Zh. Eksperim. i Teor. Fiz.,
38:1355 (1960). (Sec. 3-11.)
- - - and M. V. Razumeenko: Effect of Impurities on the Energy Spectrum of
Electrons in Bismuth, Zh. Eksperim. i Teor. Fiz., 39:276 (1960). (Sec. 3-11.)
- - - and V. V. Shchekochikhina: The Influence of Antimony Impurities on the
de Haas-van Alphen Effect in Bismuth, Zh. Eksperim. i Teor. Fiz., 41:1412
(1961). (Secs. 3-9, 3-11.)
- - - : See also N. E. Alekseevskii.
Braner, A. A., and R. Chen: Some Optical Properties of Iodine Single Crystals, J.
Phys. Chem. Solids, 24:135 (1963). (Sec. 3-11.)
Brauer, P.: Energy Problems on the Incorporation of Foreign Ions in Ionic Crystals,
from "Semiconductors and Phosphors," Friedr. Vieweg & Sohn, Brunswick
Germany, 1958, p. 63. '
Brauer, W.: Energy Losses of Electrons of Medium Velocity in Metals, Ann. Physik,
20 :390 (1957).
Braunstein, R., A. R. Moore, and F. Herman: Intrinsic Optical Absorption in German-
ium-Silicon Alloys, Phys. Rev., 109:695 (1958). (Sec. 3-11.)
- - - : Intervalence Band Transitions in Gallium Arsenide, J. Phys. Chem. Solids,
8:280, 285 (1959). (Sec. 3-11.)
- - - : See also M. S. Abrahams.
Brillouin, L.: Interaction between Electrons and Waves, Proc. Natl. Acad. Sci. U.S.,
41:401 (1955).
- - - : Molecules geantes et semiconducteurs, Cahiers Phys., 15:413 (1961).
Briscoe, C. V., and C. F. Squire: Elastic Constants of LiF from 4.2°K to 300°K by
Ultrasonic Methods, Phys. Rev., 106:1175 (1957). (Sec. 8-6.)
- - - : See also C. F. Squire.
Brockhouse, B. N., and D. G. Hunt: Energy Distribution of Slow Neutrons Scattered
from Solids, Phys. Rev., 88:542 (1952). (Sec. 8-1.)
- - - and A. T. Stewart: Scattering of Neutrons by Phonons in an Aluminum Single
Crystal, Phys. Rev., 100:756 (1955). (Sec. 8-1.)
- - - : Neutron Scattering and the Frequency Distribution of the Normal Modes of
Vanadium Metal, Can. J. Phys., 33:889 (1955). (Sec. 8-1.)
BIBLIOGRAPHY BOOK LIST 403
Carter, F. L., and R. Mazelsky: The ZnSb Structure: A Further Enquiry, J. Phys.
Chem. Solids, 26:571 (1964). (Sec. 3-11.)
Carter, R. S., D. J. Hughes, and H. Palevsky: Inelastic Scattering of Lowaenergy
Neutrons by Lattice Vibrations of Vanadium, Phys. Rev., 104:271 (1956).
(Sec. 8-1.)
- - - , H. Palevsky, and D. J. Hughes: Inelastic Scattering of Slow Neutrons by
Lattice Vibrations in Aluminum, Phys. Rev., 106:1168 (1957). (Sec. 8-1.)
Cartz, L.: Thermal Vibrations of Atoms in Cubic Crystals. I. The Temperature
Variation of Thermal Diffuse Scattering of X-rays by Lead Single Crystals.
II. The Amplitude of Atomic Vibrations, Proc. Phys. Soc. (London), B68:951,
957 (1955). (Sec. 8-1.)
Casimir, H. B. G., and D. Polder: Influence of Retardation on the London-van der
Waals Force, Phys. Rev., 73:360 (1948). (Sec. A5-7.)
- - - : Sur Jes forces van der Waals-London, J. Chim. Phys., 46:407 (1949). (Sec.
A5-7.)
Caspari, M. E., and W. J. Merz: Electromechanical Behavior of BaTiO3 Single-
domain Crystals, Phys. Rev., 80:1082 (1950). (Sec. 8-5.)
- - - : See also R. R. Rau.
Casselman, T. N., and J. J. Markham: Some Effects of a Perturbation in a Lattice
on the Normal Modes, J. Phys. Chem. Solids, 24:669 (1963). (Sec. 8-6.)
Castle, J. G., Jr., B. S. Chandrasekhar, and J. A. Rayne: Cyclotron Resonance in
Indium, Phys. Rev. Letters, 6:409 (1961). (Secs. 3-8, 3-11.)
Castner, T. G., W. Kanzig, and T. 0. Woodruff: The Electronic Structure of a V-cen-
ter, Nuovo Cimento Suppl., 7:612 (1958).
- - - : Direct Measurement of the Valley-orbit Splitting of Shallow Donors in
Silicon, Phys. Rev. Letters, 8:13 (1962). (Sec. 3-11.)
Chambers, R. G.: The Conductivity of Thin Wires in a Magnetic Field, Proc. Roy.
Soc. (London), A202:378 (1950). (Sec. 5-1.)
- - - : The Anomalous Skin Effect, Proc. Roy. Soc. (London), A215:481 (1952).
(Sec. 5-1.)
- - - : The Kinetic Formulation of Conduction Problems, Proc. Phys. Soc. (London),
A65:458 (1952).
- - - : Cyclotron Resonance under Anomalous Skin Effect Conditions, Phil. Mag.,
1:459 (1956). (Secs. 3-8, 5-1.)
- - - : Our Knowledge of the Fermi Surface, Can. J. Phys., 34:1395 (1956).
- - - : Magneto-resistance Effects in the Group I Metals at High Fields, Proc. Roy.
Soc. (London), A238:344 (1957). (Sec. 3-10.)
- - - : l\1agnetoresistance, from "The Fermi Surface," John Wiley & Sons, Inc.,
New York, 1960, p. 100. (Sec. 3-10.)
- - - : The Inversion of Specific Heat Curves, Proc. Phys. Soc. (London), 78:941
(1961). (Sec. 8-6.)
- - - and B. K. Jones: Measurement of the High-field Hall Effect by an Inductive
Method, Proc. Roy. Soc. (London), A270:417 (1963). (Sec. 2-4.)
- - - : See also J.E. Aubrey.
Chambers, W. G.: A Note on the Mathematical Properties of the Boltzmann Equa-
tion, Proc. Phys. Soc. (London), 81:877 (1963).
- - - : Magnetic Breakdown in a Simple Model, Proc. Phys. Soc. (London), 84:181
(1964).
- - - : Magnetic Breakdown and Ultrasonic Attenuation in a Two-dimensional
Model, Proc. Phys. Soc. (London), 84:941 (1964).
Champness, C. H.: The Statics of Divalent Impurity Centres in a Semiconductor,
Proc. Phys. Soc. (London), B69:1335 (1956).
410 INSULATORS, SEMICONDUCTORS, AND METALS
- - - : Optical Constants, Heat Capacity, and the Fermi Surface, Phil. Mag., 3:762
(1958).
- - - , M. J. Harrison, and W. A. Harrison: Magnetic-field Dependence of IBtrasonic
Attenuation in Metals, Phys. Rev., 117:937 (1960).
- - - and F. S. Ham: Electron Effective Mass in Solids. A Generalization of
Bardeen's Formula, J. Phys. Chem. Solids, 16:177 (1960).
- - - and E. I. Blount: The g-factor and de Haas-van Alphen Effect of Electrons in
Bismuth, Phil. Mag., 5:115 (1960). (Secs. 3-9, 3-11.)
- - - and L. M. Falicov: Magnetic Breakdown in Crystals, Phys. Rev. Letters,
7:231 (1961).
- - - : Interatomic Interactions in Metals, J. Phys. Radium, 23:643 (1962). (Sec.
11-7.)
- - - : Generalized Self-consistent Field Theory and Dielectric Formulation of
Many-body Problem, Phys. Rev., 130:1301 (1963). (Sec. 11-7.)
- - - and J. C. Phillips: Evidence for a New Collective Resonance in a "Free-
electron" Metal, Phys. Rev. Letters, 12:662 (1964). (Sec. 11-7.)
- - - : Generalized Self-consistent Field Theory: Gorkov Factorization, Phys. Rev.,
137:A497 (1965).
- - - : See also H. Ehrenreich.
Coldwell-Horsfall, R. A., and D. ter Haar: On Determining the Shape of the Fermi
Surface, Physica, 23:1126 (1957).
- - - and - - - : Influence of Collective Effects on the Magnetoresistance of
Metals, Phys. Rev., 115:891 (1959). (Secs. 3-10, 11-7.)
- - - and A. A. Maradudin: Zero-point Energy of an Electron Lattice, J. Math.
Phys., 1 :395 (1960). (Sec. 8-6.)
- - - : Relation between Elastic Constants and Second- and Third-order Force Con-
stants for fee and bee Lattices, Phys. Rev., 129:22 (1963). (Sec. 8-6.)
- - - : See also W. J. Carr.
Cole, H., and B. E. Warren: Approximate Elastic Spectrum of ,8-brass from X-ray
Scattering, J. Appl. Phys., 23:355 (1952). (Sec. 8-1.)
- - - : Approximate Elastic Spectrum of Acoustic Waves in AgCl from X-ray
Scattering, J. Appl. Phys., 24:482 (1953). (Sec. 8-1.)
- - - and E. Kineke: Lattice Vibrational Spectra of Si and Ge, Phys. Rev. Letters,
1 :360 (1958). (Sec. 8-1.)
- - - : Interatomic Force Constants from a Central-force Law, IBM J. Res. Develop.,
3:126 (1959). (Sec. 8-1.)
- - - : See also B. W. Batterman.
Coleman, R. V., A. J. Funes, J. S. Plaskett, and C. M. Tapp: Calculation and Com-
parison to Experiment of Magnetoresistance of the Noble Metals, Phys. Rev.,
133:A521 (1964). (Secs. 3-10, 3-11.)
- - - : See also A. J. Funes.
Coles, B. R.: Electron Structure and Physical Properties of the Alloy Systems Nickel-
Copper and Palladium-Silver, Proc. Phys. Soc. (London), B65:221 (1952).
(Sec. 3-11.)
- - - : The Electronic Structure of Transition Metals in Alloys, Phil. Mag., 44:915
(1953). (Sec. 3-11.)
- - - : Significance of Hall Effect Measurements on Alloys, Phys. Rev., 101:1245
(1956). (Rec. 2-4.)
- - - : Spin-disorder Effects in the Electrical Resistivities of Metals and Alloys,
Advan. Phys., 7:40 (1958).
Collins, J. G.: The Theory of the Anomalous Skin Effect in Metals for Obliquely
Incident Radiation, Appl. Sci. Res., B7:1 (1958). (Sec. 5-1.)
BIBLIOGRAPHY BOOK LIST 413
Collins, M. F.: Lattice Dynamics of Magnesium, Proc. Phys. Soc. (London), 80:362
(1962). (Sec. 8-6.)
Companion, A. L.: The Optical Energy Gap of Scandium Oxide, J. Phys. Chem.
Solids, 26:357 (1964). (Sec. 3-11.)
Condon, J. H., and J. A. Marcus: Fermi Surface of Calcium by de Haas-van Alphen
Effect, Phys. Rev., 134:A446 (1964). (Secs. 3-9, 3-11.)
Conklin, J.B., Jr., L. E. Johnson, and G. W. Pratt, Jr.: Energy Bands in PbTe, Phys.
Rev., 137:A1282 (1965). (Sec. 3-11.)
Connell, P. A., and J. A. Marcus: Low-temperature Galvanomagnetic Effects in
Bismuth Monocrystals, Phys. Rev., 107:940 (1957). (Secs. 2-4, 3-11.)
Conway, J.M., D. A. Greenwood, J. A. Krumhansl, and W. Martienssen: Oscillator
Strength for Optical Absorption by Silver Ions in Alkali Halide Crystals, J. Phys.
Chem. Solids, 24:239 (1963). (Sec. 5-5.)
Conwell, E., and V. F. Weisskopf: Theory of Impurity Scattering in Semiconductors,
Phys. Rev., 77:388 (1950).
- - - : Impurity Band Conduction in Germanium and Silicon, Phys. Rev., 103:51
(1956). (Sec. 3-11.)
- - - : Properties of Silicon and Germanium, II, Proc. Inst. Radio Engrs., 46:1281
(1958). (Sec. 3-11.)
- - : Lattice Mobility of Hot Carriers, J. Phys. Chem. Solids, 8:262 (1959).
- - - and A. L. Brown: Scattering of Hot Carriers in Germanium, J. Phys. Chem.
Solids, 16:208 (1960}. (Sec. 3-11.)
- - - and B. W. Levinger: Band Structure of Heavily Doped Semiconductors, Semi-
cond. Conj., Exeter, 1962, p. 227.
- - - : Disturbance of Phonon Distribution by Hot Electrons, Phys. Rev., 136:A814
(1964).
- - - : Relative Energy Loss to Optical and Acoustic Modes of Electrons in Avalanche
Breakdown in Ge, Phys. Rev., 136:Al138 (1964).
- - - : Phonon and Electron Distributions in High Electric Fields, J. Phys. Chem.
Solids, 26 :593 (1964).
- - - : See also P. P. Debye, A. Zylberstejn.
Cooper, B. R., H. Ehrenreich, and H. R. Philipp: Optical Properties of Noble Metals,
II, Phys. Rev., 138:A494 (1965). (Sec. 5-5.)
Cooper, G. S., G. A. Saunders, and A. W. Lawson: The Electrical Resistivity and
Thermoelectric Power of InBi and In,Bi, J. Phys. Chem. Solids, 26:1277
(1964).
Cooper, J. R. A., and S. Raimes: The Effect of Anisotropic Relaxation Times on the
Hall Coefficients of Some Dilute Alloys of Silver, Phil. Mag., 4:145 (1959).
(Secs. 2-4, 3-11.)
- - - and---: Extension of the Theory of the Effect of Anisotropic Relaxation
Times on the Hall Coefficients of Some Dilute Alloys of Silver, Phil. Mag., 4:1149
(1959). (Secs. 2-4, 3-11.)
Corak, W. S., M. P. Garfinkel, C. B. Sattersthwaite, and A. Wexler: Atomic Heats of
Copper, Silver, and Gold from 1°K to 5°K, Phys. Rev., 98:1699 (1955). (Sec. 1-4.)
Corciovei, A.: The Effect of Long and Short Range Order on Residual Resistivity,
Nuovo Cimento, 11 :118 (1959).
Corless, G. K., and N. H. March: Electron Theory of Interaction between Point
Defects in Metals, Phil. J',.fog., 6 :1285 (I 961).
Cornish, A. J.: Arrays of Inorganic Semiconducting Compounds, J. Electrochem. Soc.,
106:685 (1959). (Sec. 3-11.)
Costa, P., and R. Lallement: Etude de la structure electronique des carbures de
thorium, d'uranium et de plutonium, J. Phys. Chem. Solids, 26:559 (1964).
414 INSULATORS, SEMICONDUCTORS, AND METALS
Coulson, C. A., L.B. Redei, and D. Stocker: The Electronic Properties of Tetrahedral
Intermetallic Compounds. I. Charge Distribution, Proc. Roy. Soc. (London),
A270:357 (1962). (Sec. 11-1.)
- - - and C. S. Sharma: Corrections for Self-interaction in the Thomas-Fermi
Potential with Application to f Electrons in Atoms, Proc. Phys. Soc. (London),
79:920 (1962).
- - - : See also A. D. Buckingham, P. B. Sherry.
Coumes, A.: Oscillations collectives d'un systeme de trous en presence de phonons,
J. Phys. Radium, 21:229 (1960). (Sec. 11-7.)
Cowley, J.M., and A. L. G. Rees: Fourier Methods in Structure Analysis by Electron
Diffraction, Rept. Progr. Phys., 21:165 (1958).
Cowley, R. A.: The Lattice Dynamics of Ionic and Covalent Crystals, Proc. Roy. Soc.
(London), A268:109 (1962). (Secs. 8-6, 9-5.)
- - - : The Elastic and Dielectric Properties of Crystals with Polarizable Atoms,
Proc. Roy. Soc. (London), A268:121 (1962). (Secs. 8-6, 9-5, 10-4.)
- - - : Some Calculations Using the Ewald Transformation, Acta Cryst., 15:687
(1962). (Secs. 8-6, 9-5, 10-4.)
- - - : Temperature Dependence of a Transverse Optic Mode in Strontium Titanate,
Phys. Rev. Letters, 9:159 (1962). (Secs. 8-5, 8-6, 9-5.)
- - - , W. Cochran, B. N. Brockhouse, and A. D. B. Woods: Lattice Dynamics of
Alkali Halide Crystals. III. Theoretical, Phys. Rev., 131:1030 (1963). (Secs.
8-6, 9-5.)
- - - : The Lattice Dynamics of an Anharmonic Crystal, Advan. Phys., 12:421
(1963). (Sec. 8-6.)
- - - : The Theory of Raman Scattering from Crystals, Proc. Phys. Soc. (London),
84:281 (1964). (Sec. 8-6.)
- - - : Lattice Dynamics and Phase Transitions of Strontium Titanate, Phys. Rev.,
134:A981 (1964). (Secs. 8-5, 8-6, 9-5.)
- - - : See also W. Cochran, A. D. B. Woods.
Craig, D. P., and T. Thirunamchandran: The Electronic Spectra of Mixed Crystals,
Proc. Roy. Soc. (London), A271:207 (1963).
Crawford, J. H., Jr., H. C. Schweinler, and D. K. Stevens: Magnetic Indications of
Electronic Structure of the Conduction Band in Ge, Phys. Rev., 99:1330 (1955).
(Sec. 3-11.)
Cribier, D.: Determination des oscillations d'agitation thermique des atomes engages
clans un cristal: cas de la structure type fluorine, Acta Cryst., 6:293 (1953).
(Sec. 8-1.)
- - - : X-ray Scattering by Thermal Agitation and the Compton Effect in Fluorite,
Rev. Mod. Phys., 30:228 (1958). (Sec. 8-1.)
Cross, L. E.: A Thermodynamic Treatment of Ferroelectricity and Antiferroelectricity
in Pseudo-cubic Dielectrics, Phil. Mag., 1:76 (1956). (Sec. 8-5.)
Cruickshank, D. W. J.: The Determination of the Anisotropic Thermal Motion of
Atoms in Crystals, Acta Cryst., 9:747 (1956). (Sec. 8-6.)
- - - : The Analysis of the Anisotropic Thermal Motion of Molecules in Crystals,
Acta Cryst., 9:754 (1956). (Sec. 8-6.)
- - - : The Variation of Vibration Amplitudes with Temperature in Some Molecular
Crystals, Acta Cryst., 10:1005 (19.'i6). (Sec. 8-6.)
- - - < Ou the Lattice Vibration of Benzene, Naphthalene and Anthracene, Rev . .l}fod.
Phys., 30:163 (1958). (Sec. 8-6.)
Csavinsky, P.: Corrections to the Ground State Energies of Shallow Donors in Silicon
and Germanium, J. Phys. Chem. Solids, 24:1003 (1963). (Sec. 3-11.)
- - - : Treatment of Ionized Impurity Scattering in Degenerate Semiconductors.
BIBLIOGRAPHY BOOK LIST 415
- - - : The Reflectivity of Metals in the Infrared, Physica, 18:985 (1952). (Sec. 5-5.)
- - - : The Anomalous Skin Effect and the Reflectivity of Metals. Evaluation of
the Integrals Appearing in the Expressions for the Surface Impedance, Appl.
Sci. Res., B3:69 (1953). (Secs. 5-1, 5-5.)
- - - : The Anomalous Skin Effect and the Reflectivity of Metals. I, II, Compari-
son between Theoretical and Experimental Optical Properties. III. General
Theory of Low-frequency and Optical Behaviour. IV. Theoretical Optical
Properties of Thin Metallic Films, Physica, 19:311, 348, 729, 1187 (1953).
(Secs. 5-1, 5-5.)
- - - : Scattering of Electrons and Holes by Charged Donors and Acceptors in
Semiconductors, Phil. Mag., 46:831 (1955).
- - - : Pictorial Kinetic Methods in the Theory of Metals and Semiconductors,
Physica, 22:671 (1956).
- - - : The Anomalous Skin Effect and the Optical Absorptivity of Semiconductors,
I, II, Physica, 22:683, 1237 (1956). (Secs. 5-1, 5-5.)
- - - : The Concept of Formal Relaxation Times in the Theory of Electronic Con-
ductors at Low Temperatures, Physica, 22:698 (1956).
- - - : A Remark on the Influence of High Frequency Electric Fields and Uniform
Magnetic Fields on Electronic Conduction, Physica, 22:701 (1956).
- - - : A General Quasi-classical Theory of Diamagnetic ("Cyclotron") Resonance
in Electronic Conductors, Physica, 22:703 (1956). (Sec. 3-8.)
- - - : The Fermi-Dirac Integrals, Appl. Sci. Res., B6:225 (1956).
Dixon, A. E., A. D. B. Woods, and B. N. Brockhouse: Frequency Distribution of the
Lattice Vibrations in Sodium, Proc. Phys. Soc. (London), 81:973 (1963). (Sec.
8-1.)
Dixon, J. R.: Photoelectromagnetic Effect in Indium Arsenide, Phys. Rev., 107:374
(1957). (Sec. 3-11.)
Dobbs, E. R., and G. 0. Jones: Theory and Properties of Solid Argon, Rept. Progr.
Phys., 20:516 (1957). (Sec. 8-6.)
Dobrovolskii, V. N., and Yu. I. Gritsenko: Use of the Hall Current for Investigation of
Carrier Scattering in Semiconductors, Fiz. Tverd. Tela, 4:2760 (1962). (Sec. 2-4.)
Dogonadze, R. R., and Yu. A. Chizmadzhev: Electrical Conductivity of Polar
Crystals with Low Carrier Mobility. I. Structure of the Energy Spectrum, Fiz.
Tverd. Tela, 3:3712 (1961).
---,A.A. Chernenko, and Yu. A. Chizmadzhev: Electrical Conductivity of Polar
Crystals with Low Carrier Mobility. II. Mobility Calculations, Fiz. Tverd. Tela,
3:3720 (1961).
Dolling, G., and B. N. Brockhouse: Lattice Vibrations in Pyrolitic Graphite, Phys.
Rev., 128:1120 (1962). (Secs. 8-1, 8-6.)
- - - : See also R. J. Birgeneau, G. Gilet.
Domb, G.: Specific Heats of Compressible Lattices and the Theory of Melting, J.
Chem. Phys., 26:783 (1956). (Sec. 8-6.)
- - - and I. J. Zucker: Theoretical Calculations of Solid Argon, Nature, 178:484
(1956). (Sec. 8-6.)
- - - and M. F. Sykes: The Calculation of Lattice Constants in Crystal Statistics,
Phil. Mag., 2:733 (1957). (Sec. 8-6.)
- - - , A. A. Maradudin, E.W. Montroll, and G. H. Weiss: The Vibration Spectra
of Disordered Lattices, J. Phys. Chem. Solids, 8:419, 421 (1959). (Sec. 8-6.)
- - - , - - - , - - - , and - - - : Vibration Frequency Spectra of Disordered
Lattices. I. Moments of the Spectra for Disordered Linear Chains. II. Spectra
of Disordered One-dimensional Lattices, Phys. Rev., 116:18, 24 (1959). (Sec.
8-6.)
BIBLIOGRAPHY BOOK LIST 421
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Tela, 5:2149 (1963). (Sec. 2-4.)
- - - : See also V. L. Gurevich, L. I. Korovin.
Fischbeck, H. J.: Symmetrieeigenschaften des Blochelektrons im Magnetfeld, Phys.
Status Solidi, 3:1082,2399 (1963).
Fischer, G., and D. K. C. MacDonald: Magnetoresistance and Field Dependence of the
Hall Effect in Indium Antimonide, Can. J. Phys., 36:527 (1958). (Secs. 3-10,
3-11.)
- - - and F. T. Hedgcock: Magnetic Susceptibility and Galvanomagnetic Effects
in Pure p-type Tellurium, J. Phys. Chem. Solids, 17:246 (1960). (Secs. 2-4, 3-11.)
- - - and J. L. Brebner: Electrical Resistivity and Hall Effect of Single Crystals of
GaTe and GaSe, J. Phys. Chem. Solids, 23:1363 (1962). (Secs. 2-4, 3-11.)
- - - : See also P. Fielding.
Fischer-Hjalrnars, I., and B. Grabe: Theoretical Study of the Colored Alkali Oxides,
J. Chem. Phys., 22:1259 (1954). (Sec. 5-5.)
- - - : On the Nature of Bonds between Carbon Atoms, Tetrahedron, 17:235 (1962).
Fisher, E.: Energy Levels of Sodium Chloride, Phys. Rev., 73:36 (1948). (Sec. 3-11.)
- - - : Coulomb Energy of Complex Crystals, J. Chem. Phys., 19:1284 (1951).
(Sec. 10-4.)
Fisher, I. Z.: Effects of Screening of a Coulomb Field by Free Charges in Metals and
Semic::onductors, Zh. Tekhn. Fiz., 27:638 (1957). (Sec. 11-7.)
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- - - and V. I. Krylovich: The Hydrogen-like System with Partially Screened
Coulomb Potential, Zh. Tekhn. Fiz., 27:1289 (1957).
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Tverd. Tela, 1:192 (1959).
Fisher, J. C.: Particle-hole Inversion in Fermi Surface: A Symmetry Operation for
Collective Excitations, Phys. Rev., 126:492 (1962). (Sec. 11-7.)
Fisher, P.: The Effect of Chemical Splitting on the Lyman Series of Antimony Impurity
in Germanium, J. Phys. Chem. Solids, 23:1346 (1962). (Sec. 5-5.)
- - - : See also H. Y. Fan.
Fletcher, G. C.: The Thermal Expansion of Solids, Phil. Mag., 2:639 (1957). (Sec.
8-6.)
- - - : The Thermal Expansion of Solids, Australian J. Phys., 12:237 (1959). (Sec.
8-6.)
Fletcher, J. G., and D. C. Larson: Influence of Electron Interactions on Metallic
Properties, Phys. Rev., 111 :455 (1958). (Sec. 11-7.)
Fletcher, R. C., W. A. Yager, and F. R. Merritt: Observation of Quantum Effects in
Cyclotron Resonance, Phys. Rev., 100:747 (1955). (Sec. 3-8.)
Flubacher, P., A. J. Leadbetter, J. A. Morrison, and B. P. Stoicheff: The Low-tempera-
ture Heat Capacity and the Raman and Brillouin Spectra of Vitreous Silica,
J. Phys. Chem. Solids, 12:53 (1959). (Sec. 8-6.)
Fochs, P. D.: The Measurement of the Energy Gap of Semiconductors from Their
Diffuse Reflection Spectra, Proc. Phys. Soc. (London), B69:70 (1956). (Sec. 5-5.)
Fok, M. V.: Forbidden Bandwidth and Effective Charge of Ions in the Crystal Lattice
of ZnS, Fiz. Tverd. Tela, 6:1489 (1963). (Sec. 3-11.)
Fomin, N. V.: High Electric Fields in the Theory of the Electrical Conductivity of
Semiconductors, Zh. Tekhn. Fiz., 28:783 (1958).
- - - : Absorption of Infrared Radiation by Semiconductor in an Electric Field,
Fiz. 1'verd. Tela, 2:605 (1960). (Sec. 5-5.)
- - - : Theory of Screening in the Case of the Many-val~ey Electron Energy Spectrum,
Fiz. Tverd. Tela, 3:1883 (1961).
BIBLIOGRAPHY BOOK LIST 431
Foner, S., and E. M. Pugh: Hall Effects of the Cobalt Nickel Alloys and of Armco Iron,
Phys. Rev., 91:20 (1953). (Secs. 2-4, 3-11.)
- - : Hall Effect in Permalloys, Phys. Rev., 99:1079 (1955). (Secs. 2-4, 3-11.)
- - - : Hall Effect and Magnetic Properties of Armco Iron, Phys. Rev., 101:1648
(1956). (Secs. 2-4, 3-11.)
- - - : Hall Effect in Titanium, Vanadium, Chromium, and Manganese, Phys. Rev.,
107:1513 (1957). (Secs. 2-4, 3-11.)
- - - , F. E. Allison, and E. M. Pugh: Hall Effect in Ni 3Mn and Fe-Co as a Function
of Order, Phys. Rev., 109:1129 (1958). (Secs. 2-4, 3-11.)
- - - : See also R. J. Keyes, S. J. Williamson, S. Zwerdling.
Foreman, A. J. E., and W. M. Lomer: Lattice Vibrations and Harmonic Forces in
Solids, Proc. Phys. Soc. (London), B70:1143 (1957). (Sec. 8-6.)
- - - : Anharmonic Specific Heat of Solids, Proc. Phys. Soc. (London), 79:1124 (1962).
(Sec. 8-6.)
Fiirsvoll, K., and I. Holwech: Galvanomagnetic Size Effects in Al Films, Phil. Mag.,
9:435 (1964). (Sec. 3-11.)
- - - and---: Galvanomagnetic Size Effects in Indium Films, Phil. Mag., 10 :181
(1964). (Sec. 3-11.)
- - - and - - - : Sondheimer Oscillations in the Hall Effect of Aluminum, Phil.
Mag., 10:921 (1964). (Sec. 3-11.)
Fowler, H. A., and H. E. Farnsworth: Reflection of Very Slow Electrons, Phys. Rev.,
111 :103 (1958).
Fox, D., and 0. Schnepp: Theory of the Lower Excited Electronic States of the Benzene
Crystal, J. Chem. Phys., 23:767 (1955). (Sec. 5-5.)
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8:439, 442 (1959).
Fradkin, E. S.: A Refinement of the Thomas-Fermi Model at Small Distances, Zh.
Eksperim. i Teor. Fiz., 36:1533 (1959). (Sec. 10-1.)
Frank, F. C.: Lattice Sums for Ionic Crystals, Phil. Mag., 41:1287 (1950). (Sec.
10-4.)
Frank, H. S.: Thermodynamics of a Fluid Substance in the Electrostatic Field, J.
Chem. Phys., 23:2023 (1955).
Frank, V.: Hall Coefficient of Technically Pure Metals from 80°K to 800°K. I.
Results for Cu, Ag, Au, Pd, and Pt. II. Results for Zr, W, Mo, Ta, Nb, and Al.
Survey of Results for the 4d- and 5d-transition Group of Metals, Appl. Sci. Res.,
BG:379 (1957); B7:41 (1958). (Secs. 2-4, 3-11.)
Franklin, A. D.: Ferroelectricity of Barium Titanate Single Crystals, Prog. Dielectrics,
1959, pp. 171-215. (Sec. 8-5.)
Fray, S., J., F. A. Johnson, and R. H. Jones: Lattice Absorption Bands in Indium
Antimonide, Proc. Phys. Soc. (London), 76:939 (1960). (Secs. 3-11, 8-6.)
- - - : See also W. Cochran.
Frazer, B. C., and R. Pepinsky: X-ray Analysis of the Ferroelectric Transition in
KH,PO,, Acta Cryst., 6:273 (1953). (Sec. 8-5.)
- - - , H. R. Danner, and R. Pepinsky: Single-crystal Neutron Analysis of Tetragonal
BaTiOa, Phys. Rev., 100:745 (1955). (Sec. 8-5.)
- - - : See also G. Shirane.
Frederikse, H. P. R., and R. F. Blunt: Photoeffects in Intermetallic Compounds,
Proc. Inst. Radiu Engrs., 43:1828 (1955).
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Rev., 99:1889 (1955). (Sec. 3-11.)
- - - and W. R. Hosler: Galvanomagnetic Effects inn-type InSb at 4.2°K, Can. J.
Phys., 34:1377 (1956). (Secs. 2-4, 3-11.)
432 INSULATORS, SEMICONDUCTORS, AND METALS
Friedman, L.: Transport Properties of Organic Semiconductors, Phys. Rev., 133 :A1668
(1964).
]:<'ritzsche, H.: Resistivity and Hall Coefficient of Antimony-doped Germanium at
Low Temperature, J. Phys. Chem. Solids, 6:69 (1958). (Secs. 2-4, 3-11.)
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(1960). (Sec. 3-11.)
Frohlich, H.: On the Theory of Dielectric Breakdown in Solids, Proc. Roy. Soc.
(London), A188:521 (1947).
- - - : Conduction Electrons in Non-metallic Solids, Research (London), 3:202 (1950).
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Phil. Mag., 41:221 (1950).
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Phys. Rev., 79:526 (1950).
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Phys. Rev., 92:1152 (1953). (Sec. 5-3.)
- - - : Electrons in Lattice Fields, Advan. Phys., 3:325 (1954).
- - - and H. Pelzer: Plasma Oscillations and Energy Loss of Charged Particles in
Solids, Proc. Phys. Soc. (London), A68:525 (1955). (Sec. 5-3.)
---and B. V. Paranjape: Dielectric Breakdown in Solids, Proc. Phys. Soc. (London),
B69:21 (1956).
- - - , - - - , C. G. Kuper, and S. Nakajima: The Influence of Interelectronic
Collisions and of Surfaces on Electronic Conductivity, Proc. Phys. Soc. (London),
B69:842 (1956).
- - - and S. Doniach: Plasma Interaction and Conduction in Semiconductors,
Proc. Phys. Soc. (London), B69:961 (1956). (Sec. 11-7.)
- - - : Phenomenological Theory of the Energy Loss of Fast Particles in Solids, from
"Max Planck Festschrift," Deutscher Verlag der Wissenschaften, Berlin, 1958,
p. 277. (Sec. 5-3.)
- - - and G. L. Sewall: Electric Conduction in Semiconductors, Proc. Phys. Soc.
(London), 74:642 (1959). ·
- - - and A. W. B. Taylor: The Boltzmann Equations in Electron-Phonon Systems,
Proc. Phys. Soc. (London), 83:739 (1964).
Froman, P. 0.: A Numerical Comparison of the Density Matrix of Rb+ in the Statis-
tical Approximation and in the Hartree Approximation, Arkiv Fysik, 5:135
(1952).
- - - : Concerning the Statistical Calculation of Cohesive Energies of Ionic Crystals,
Arkiv Fysik, 9:93 (1954). (Sec. 10-4.)
- - - : Simple Analytical Approximations for the Equation of State of an Ideal Non-
relativistic Fermi-Dirac Gas, Arkiv Fysik, 26:127 {1964). (Sec. 10-4.)
- - - : See also S. 0. Lundqvist.
Fues, E., H. Stumpf, and F. Wahl: Klassische nichtlineare Gitterstatistik eindimen-
sionaler Gitterstiirungen, Z. Naturforsch., 13a:962 (1958). (Sec. 8-6.)
- - - and---: Elektron-Gitter Gleichgewichtszustii.nde in gestiirten Kristallen,
Z. Naturforsch., 14a:142 (1959).
Fujimoto, F.: Dynamical Theory of Electron Diffraction in Laue-Case. I. General
Theory. II. Numerical Calculation of Intensities. III. Forbidden Reflection,
J. Phys. Soc. Japan, 14:1558 (1959); 16:859, 1022 (1960).
- - - - and 0. Sueoka: Plasma Oscillation of Electrons in Alloys. I. Ag-Al Alloys,
J. Phys. Soc. Japan, 19:2069 (1964).
- - - : See also 0. Sueoka.
Fujita, E., and T. Usui: Excitations in a High Density Electron Gas. II. Diamag-
netism, Progr. Theoret. Phys. (Kyoto) 23 :799 {1960).
434 INSULATORS., SEMICONDUCTORS, AND METALS
- - - : Investigation of the Fermi Surface of Tin by the Size Effect, Zh. Eksperim.
i Tear. Fiz., 44:811 (1963). (Sec. 5-1.)
Garcia-Moliner, F., and S. Simons: An Extension of the General Variational Principle
of Transport Theory, Proc. Cambridge Phil. Soc., 63:848 (1957).
- - - : Magnetoresistance and Fermi Surface of Alkali Metals, Proc. Phys. Soc.
(London), 72:996 (1958). (Secs. 3-10, 3-11.)
- - - : On the Fermi Surface of Copper, Phil. Mag., 3:207 (1958). (Sec. 3-11.)
- - - : A Variational Calculation of Electronic Transport in a Magnetic Field, Proc.
Roy. Soc. (London), A249:73 (1959).
Garfinkel, M., and P. Lindenfeld: Lattice Conductivity of Tin, Phys. Rev., 110:883
(1958).
- - - : See also W. S. Corak.
Garland, C. W., and L. J. Slutsky: Lattice Dynamics of Hexagonal Close-packed
Metals, II. Frequency Spectrum, J. Chem. Phys., 28:331 (1958). (Sec. 8-6.)
- - - : Comment on the Elastic Properties of Beta Brass, Phys. Rev., 136:A1696
(1964).
- - - : See also L. J. Slutsky.
Garlick, G. F. J., J. M. Hough, and R. A. Fatehally: The Nature of Binding in Cad-
mium Telluride, Proc. Phys. Soc. (London), 72:925 (1958). (Sec. 3-11.)
Infrared Phosphor-semiconductors, ·J. Phys. Chem. Solids, 8:449
(1959).
Garrett, C. G. B.: Organic Semiconductors, Semicond. Phys. Conj., Prague, 1960,
Academic Press Inc., New York, p. 844.
Gashimzade, F. M.: The Energy Structure of Complex Semiconductors and Spectrum
of Holes in Compounds with Wurtzite-type Structure, Fiz. Tverd. Tela, 4:2059
(1962).
- - - : Band Structure of A 11 B 1YC~-type Semiconductor Compounds Having the
Chalcopyrite Structure, Fiz. Tverd. Tela, 6:1199 (1963).
Gaskell, T.: The Collective Treatment of a Fermi Gas, II, Proc. Phys. Soc. (London),
77:1182 (1961). (Sec. 11-7.)
- - - : The Collective Treatment of Many-body Systems, III, Proc. Phys. Soc.
(London), 80:1091 (1962). (Sec. 11-7.)
Gaspar, R.: Coherent Scattering of X-rays and High-speed Electron Rays by Atoms.
The Atomic Form Factor, Acta Phys. Hung., 3:59 (1953). (Sec. 6-2.)
- - - : -Uber die Bindung des metallischen Aluminiums, Acta Phys. Hung., 2:31
(1954). (Sec. 10-4.)
- - - : Uber eine Approximation des Hartree-Fockschen Potentials <lurch eine
Universelle Potentialfunktion, Acta Phys. Hung., 3 :263 (1954). (Sec. 10-2.)
- - - and P. Csavinsky: Uber die Theorie der Binding von zweiwertigen zweiatomigen
Ionenmolekiilen. Bindung der Erdalkalimetalloxyde, Acta Phys. Hung., 6:65
(1955). (Sec. 10-4.)
- - - and B. Molnar: -Uber die Bindung des metallischen Silbers, Acta Phys. Hung.,
6:119 (1956). (Sec. 10-4.)
- - - : Theoretical Interpretation of the Optical and Electrical Properties of Tellu-
rium, Selenium, and Their Alloys, Acta Phys. Hung., 7:313 ·(1957). (Sec. 5-5.)
- - - : Plane Wave Method with a Modified Potential Field, Acta Phys. Hung.,
9:79 (1958).
Gautier, F.: Structure clectronique des alliages a base de nickel et du cobalt, J. Phys.
Radium, 23:738 (1962). (Sec. 3-11.)
- - - : Structure electronique des impuretes clans le nickel. Application a la diffusion
magnetique des neutrons par des alliages desordonnes a base de nickel, J. Phys.
Chem. Solids, 24:387 (1963). (Sec. 3-11.)
BIBLIOGRAPHY BOOK LIST 437
- - - : Equation of the Fusion Curve, Phys. Rev., 102:325 (1956). (Sec. 8-6.)
- - - : Griineisen Parameter for a Solid under Finite Strain, Phys. Rev., 102:331
(1956). (Sec. 8-6.)
- - - : Amplitudes of Thermal Vibration at Fusion, Phys. Rev., 103:1700 (1956).
(Sec. 8-6.)
- - - : Variation of the Amplitude of Thermal Vibration on the Fusion Curve, Phys.
Rev., 104:908 (1956). (Sec. 8-6.)
- - - : Temperature-dependent Equations of State of Solids, J. Appl. Phys., 28:1253
(1957). (Sec. 8-6.)
Ginzburg, V. L.: Some Remarks on Phase Transitions of the Second Kind and the
Microscopic Theory of Ferroelectric Materials, Fiz. Tverd. Tela, 2:2031 (1960).
(Sec. 8-5.)
Girifalco, L.A., and R. A. Lad: Energy of Cohesion, Compressibility, and the Potential
Energy Functions of the Graphite System, J. Chem. Phys., 25:693 (1956). (Sec.
10-4.)
- - - and J. R. Streetman: A Theoretical Calculation of the Relaxation of Atoms
Surrounding a Vacancy in the Body-centered Cubic Lattice, J. Phys. Chem.
Solids, 4:182 (1958). (Sec. 10-4.)
- - - and V. G. Weizer: Application of the Morse Potential Function to Cubic
Metals, Phys. Rev., 114:687 (1959). (Sec. 10-4.)
Giterlnan, M. Sh.: On Multielectron Theory of Ionic Crystals, Fiz. Metal. i Metalloved.,
5:364 (1957). (Sec. 11-7.)
- - - : See also V. L. Vinetskii, S. V. Vonsovskii.
Gitser, D. V., and G. A. Ivanov: Electrical Properties of Single Crystals of Bismuth
and Its Alloys. I. Galvanomagnetic Properties of Pure Bismuth. II. Galvano-
magnetic Properties of Bismuth-Tellurium Alloys (Solid Solutions), Fiz. Tverd.
Tela, 2:1457, 1464 (1960). (Secs. 2-4, 3-11.)
- - - and---: On the Density of Electron States in the Conduction Band of
Bismuth, Fiz. Tverd. Tela, 5:1406 (1963). (Sec. 3-11.)
Glaser, V., and B. Jaksic: Methods of Solution of the Bloch Integral Equation at
Low Temperatures, Periodicum Math. Phys. Astron. (Zagreb), 12:257 (1957).
- - - and---: Generalization of the Variation Principle in the Theory of Electrical
Conductivity, Nuovo Cimento, 7:259 (1958).
Glasser, M. L.: Summation over Feynman Histories: Charged Particles in a Uniform
Magnetic Field, Phys. Rev., 133:B831 (1964). (Sec. 11-7.)
- - - : Magnetic Properties of Nearly Free Electrons: Nonoscillatory Magnetic
Susceptibility, Phys. Rev., 134:A1296 (1964); 135:AB2 (1964).
Glauberman, A. E.: Contribution to the Theory of Polar Crystals in an External
Electric Field, Dokl. Akad. Nauk SSSR, 108:49 (1956).
- - - , V. V. Vladimirov, and I. V. Stasyuk: A New Form of the Polar Model of
Crystals, Dokl. Akad. Nauk SSSR, 126:543 (1959).
- - - , - - - , and---: Theory of Elementary Perturbations in Atomic Crystals,
Fiz. Tverd. Tela, 2:133 (1960).
- - - : See also I. V. Stasyuk.
Glick, A. J., and R. A. Ferrell: Single-particle Excitations of a Degenerate Electron
Gas, Ann. Phys. (N.Y.), 11:359 (1960). (Sec. 11-7.)
Glicksman, M.: Galvanomagnetic Effects in a Semiconductor with Two Sets of
Spheroidal Energy Surfaces, Phys. Rev., 102:1496 (1956). (Sec. 2-4.)
---and S. M. Christian: Conduction Band Structure of Germanium-Silicon Alloys,
Phys. Rev., 104:1278 (1956). (Sec. 3-11.)
- - - : Effect of Impurity Scattering on the Magnetoresistance of n-type Germanium,
Phys. Rev., 108:264 (1957). (Secs. 3-10, 3-11.)
BIBLIOGRAPHY BOOK LIST 439
Groves, S., and W. Paul: Band Structure of Gray Tin, Phys. Rev. Letters, 11:194
(1963). (Sec. 3-11.)
Gschneidner, K. A., Jr.: Physical Properties and Inter-relationships of Metallic and
Semimetallic Elements, Solid State Phys., 16:275 (1964).
Gubanov, A. I.: Scattering of Electrons in a Liquid Due to Violation of Long-range
Order, Zh. Eksperim. i Teor. Fiz., 30:862 (1956).
- - - : Electron Scattering on Thermal Oscillations in a Liquid, Zh. Eksperirn. i Teor.
Fiz., 31:462 (1956).
- - - : Mean Free Path of Electrons in Liquid and Amorphous Conductors, Zh.
Tekhn. Fiz., 26:1651 (1956).
- - - : Electrical Conductivity, Thermal Conductivity, Thermal e.m.f., and Hall and
Nernst Constants for Amorphous Substances with Electronic Conductivity,
Zh. Tekhn. Fiz., 27:3 (1957). (Sec. 2-4.)
- - - : Change in Properties of Semiconductors on Fusion, Zh. Tekhn. Fiz., 27 :2510
(1957).
- - - and A. A. Nranyan: Dependence of the Frequency Spectrum of a Simple
Cubic Lattice· on Deformation, Fiz. Tverd. Tela, 6:1678 (1963). (Sec. 8-6.)
Guenault, A. M., and D. K. C. MacDonald: Electron and Phonon Scattering. IL
Thermoelectricity in Rubidium, Cesium, and Alloys at Very Low Temperatures,
Proc. Roy. Soc. (London), A274:154 (1963). (Sec. 3-11.)
Guentert, 0. J.: Effects of Layer Faults in Diamond Structures on X-ray Diffraction
Patterns, J. Appl. Phys., 28:1515 (1957).
Guertin, R. F., and F. Stern: Effective Fields in Cubic Lattices with Extended Charges,
Phys. Rev., 134:A427 (1964).
Gulyaev, Y. V.: Scattering of Current Carriers on Impurity Centers, Fiz. Tverd. Tela,
1:422 (1959).
- - - : See also V. L. Bonch-Bruevich, S. F. Edwards.
Gummel, H., and M. Lax: Thermal Ionization and Capture of Electrons Trapped in
Semiconductors, Phys. Rev., 97:1469 (1955).
- - - and---: Thermal Capture of Electrons in Silicon, Ann. Phys. (N.Y.),
2:28 (1957). (Sec. 3-11.)
Gunnerson, E. M.: The de Haas-van Alphen Effect in Aluminum, Phil. Trans. Roy.
Soc., A249:299 (1957). (Secs. 3-9, 3-11.)
Gunther, L.: Lattice-vibration Effects Due to Impurities in an Alkali Halide, Phys.
Rev., 138:A1697 (1965). (Sec. 8-6.)
Gupta, K. P., C.H. Cheng, and P. A. Beck: Review of the Electronic Specific Heat of
bee and fee Solid Solutions of First Long Period Transition Elements, J. Phys.
Radium, 23:721 (1962). (Sec. 1-4.)
Gurevich, A. V.: Simplification of the Equations for the Distribution Function of
Electrons in Plasma, Zh. Eksperim. i Teor. Fiz., 32:1237 (1957). (Sec. 11-7.)
Gurevich, L. E., and Z. I. Uritskii: The Oscillation of the Absorption Coefficient of a
Crystal in a Magnetic Field in the Region of the Direct Photoeffect, Zh. Tekhn.
Fiz., 28 :932 (1958).
- - - and---: On the Theory of the Long Wave Absorption in Crystals, Fiz.
Tverd. Tela, 1 :1298 (1959). (Sec. 5-5.)
- - - and G. M. Nedlin: Thermoelectric Coefficients of Metals in Strong Magnetic
Fields and the Effect of Drag of Electrons by Phonons, Zh. Eksperim. i Teor.
Fiz., 37:765 (1959).
- - - and I. P. Ipatova: Faraday Effect in Semiconductors with Free Carriers :n a
Strong Magnetic Field, Zh. Eksperim. i Teor. Fiz., 37 :1324 (1959).
- - - and Z. I. Uritskii: Theory of Infrared Absorption in Crystals, Fiz. Tverd. Tela,
2:1239 (1960). (Sec. 8-6.)
INSULATORS, SEMICONDUCTORS, AND METALS
--"-~r
~?;
.>?_- -
-
-
Constant, Proc. Phys. Soc. (London), 77:1147 (1961). (Sec. 3-11.) --i~~~i
Hanamura, E., T. Inui, and Y. Toyozawa: Cyclotron Resonance of Hot Electrons in
Pure Germanium, J. Phys. Soc. Japan, 17:666 (1962). (Secs. 3-8, 3-11.) ;"it
- - - : See also S. Tanaka. "'J
Handler, P.: Energy Level Diagrams for Germanium and Silicon Surfaces, J. Phys. !.e-_1
Chem. Solids, 14:1 (1960). (Sec. 3-11.) ~-•1
Haneman, D.: Free Bonds in Semiconductors, Semicond. Conj., Exeter, 1962, Institute
of Physics and the Physical Society, London, 1962, p. 842.
Hanlon, J. E., and A. W. Lawson: Effective Ionic Charge in Alkali Halides, Phys.
Rev., 113:472 (1959). (Sec. 9-5.)
Hanna, I. I., and E. H. Sondheimer: Electron and Lattice Conduction in Metals,
Proc. Roy. Soc. (London), A239:247 (1957).
Harbecke, G.: Absorption Edge in Ferroelectric SbSI under Electric Fields, J. Phys.
Chem. Solids, 24:957 (1963). (Sec. 8-5.)
Hardy, J. R.: Lattice Vibrational Spectrum of Sodium Chloride, Phil. Mag., 4:1278
(1959). (Sec. 8-6.)
- - - and A. M. Karo: Lattice Vibrations of Sodium Chloride: Experimental and
Theoretical Heat Capacity, Phil. Mag., 5:859 (1960). (Sec. 8-6.) -j
- : The Elastic Constants of Crystals, Solid State Phys., 7 :213 (1958). (Sec. 8-6.)
Hurley, A. C., J.E. Lennard-Jones, and J. A. Pople: The Molecular Orbital Theory
of Chemical Valency. XVI. A Theory of Paired Electrons in Polyatomic
Molecules, Proc. Roy. Soc. (London), A220:446 (1953). (Sec. 11-1.)
Hurst, R. P.: Coherent Atomic Scattering Factors for Lithium Hydride Crystal Field,
Phys. Rev., 114:746 (1959). (Sec. 6-2.)
- - - : See also M. Yoshimine.
Hutchinson, T. S.: Ultrasonic Absorption in Solids, Science, 132:643 (1960). (Sec.
3-9.)
Hutner, R. A., E. S. Rittner, and F. K. du Pre: Concerning the Work of Polarization
in Ionic Crystals of the NaCl Type. II. Polarization and Two Adjacent Charges
in the Rigid Lattice, J. Chem. Phys., 17:204 (1949).
- - - , - - - , and - - - : Fermi Levels in Semiconductors, Philips Res. Rept.,
6:188 (1950).
- - - : See also F. K. du Pre, E. S. Rittner.
Hutson, A. R.: Hall Effect Studies of Doped Zinc Oxide Single Crystals, Phys. Rev.,
108:222 (1957). (Secs. 2-4, 3-11.)
- - - : Electronic Properties of ZnO, J. Phys. Chem. Solids, 8:467 (1959). (Sec. 3-11.)
Hwa, R. C.: Effects of Electron-Electron Interactions on Cyclotron Resonances in
Gaseous Plasmas, Phys. Rev., 110:307 (1958). (Sec. 3-8.)
Ichikawa, Y. H.: Theory of Collective Oscillation of Electrons in Solids, Progr.
Theoret. Phys. (Kyoto), 18:247 (1957). (Sec. 11-7.)
- - - : A Possible Size Effect on the Plasma Oscillation of Electrons in Solids, Progr.
Theoret. Phys. (Kyoto), 19:585 (1958). (Sec. 11-7.)
- - - : Characteristic Energy Loss of Electrons in Graphite, Phys. Rev., 109:653
(1958). (Sec. 11-7.)
lchimaru, S.: Magnetic Susceptibility of Bloch Electrons in a Dielectric Formulation,
J. Phys. Soc. Japan, 20:520 (1965).
Ichimura, H., Quant.um Statistical Mechanics of Electron-Phonon System, Progr.
Theoret. Phys. (Kyoto), 16:151 (1956).
- - - and S. Tanaka: The de Haas-van Alphen Effect and Coulomb Interaction,
Progr. Theoret. Phys. (Kyoto), 24:457 (1960). (Sec. 3-9.)
- - - and - - - : Quantum Statistics of Interacting Electron Gas in a Strong
Magnetic Field, Progr. Theoret. Phys. (Kyoto), 26:315 (1961).
Indenbom, V. L., and M. A. Chernysheva: Construction of the Thermodynamic
Potential of Rochelle Salt from the Results of the Optical Investigation of Ferro-
electric Domains, Zh. Eksperim. i Teor. Fiz., 32:697 (1957). (Sec. 8-5.)
Ingard, U., and D. C. Pridmore-Brown: Scattering of Sound by Sound, J. Acoust. Soc.
Am., 28:367 (1956). (Sec. 8-6.)
Inoue, M.: Landau Levels and Cyclotron Resonance in Graphite, J. Phys. Soc. Japan,
17:808 (1962). (Secs. 3-8, 3-11.)
- - - : See also Y. Uemura, J. Yamashita.
Inui, T., and Y. Uemura: Theory of Color Centers in Ionic Crystals, I, II, Progr.
Theoret. Phys. (Kyoto), 6:252, 395 (1950). (Sec. 5-5.)
- - - , - - - , a n d Y. Toyozawa: On the Electronic Structures of the M-centers in
Alkali-Halide Crystals, Progr. Theoret. Phys. (Kyoto), 8:355 (1952). (Secs. 3-11,
5-5.)
- - - : See also E. Hanamura.
Ioffe, A. F.: Two New Applications of the Peltier Effect, Zh. Tekhn. Fiz., 26:478 (1956).
- - - , S. V. Airapetyants, A. V. Ioffe, N. V. Kolomoets, and L. S. Stilbans: On
Increasing the Efficiency of Semiconducting Thermocouples, Dokl. Akad. Nauk
SSSR, 106:981 (1956).
454 INSULATORS, SEMICONDUCTORS, AND METALS
- - - : Thermoelectric Generators, lzv. Akad. Nauk SSSR Ser. Fiz., 20:76 (1956).
- - - : Further Development of the Theory of Semiconductors, Zh. Tekhn. Fiz.,
27 :1153 (1957).
- - - : Thermoelectric and Thermal Properties of Semiconductors, J. Phys. Radium,
18 :209 (1957).
- - - : Two Mechanisms of the Movement of Free Charges, Fiz. Tverd. Tela, 1:157
(1959).
- - - : Two Mechanisms of Heat Conduction, Fiz. Tverd. Tela, 1:160 (1959).
- - - : Properties of Various Semiconductors, J. Phys. Chem. Solids, 8:6, 20
(1959).
- - - : See also A. V. Ioffe.
Ioffe, A. V., and A. F. Ioffe: The Thermal Conductivity of Semiconductors, Izv. Akad.
Nauk SSSR Ser. Fiz., 20:65 (1956).
- - - and - - - : Thermal Conductivity of Semiconductor Solid Solutions, Fiz.
Tverd. Tela, 2:781 (1960).
- - - : See also A. F. Ioffe.
Irie, T.: Magnetoresistance Effect of Lead Sulfide Group of Semiconductors. I.
Measurements on Natural Specimens of Lead Sulfide, J. Phys. Soc. Japan,
11:840 (1956). (Secs. 3-10, 3-11.)
Itakura, M., and H. Toyoda: Electrical Conductivity and Hall Coefficient of CdS
Single Crystal, J. Phys. Soc. Japan, 18:150 (1963). (Sec. 3-11.)
Ivanchik, I. I.: The Macroscopic Theory of Ferroelectrics, Fiz. Tverd. Tela, 3:3731
(1961). (Sec. 8-5.)
- - - : Concerning the Criterion of Ferroelectricity in the Microscopic Theory, Fiz.
Tverd. Tela, 4:3236 (1962). (Sec. 8-5.)
Ivanov, G. A., and A. M. Popov: The Mean Free Path of Carriers in Bismuth and in
Bismuth-Antimony Alloys, Fiz. Tverd. Tela, 6:1428 (1963). (Sec. 3-11.)
- - - and - - - : Electrical Properties of Bi-Sb Alloys, Fiz. Tverd. Tela, 6:2409
(1963). (Sec. 3-11.)
- - - : See also D. V. Gitser.
Izuyama, T.: Electron Interaction in Very Long Linear Conjugated Molecules. II.
Elementary Excitations in a System with Small Energy Gap, Progr. Theoret.
Phys. (Kyoto), 22:681 (1959).
Izyumov, Y. A.: The Spectrum of Elementary Excitations of the Electron System of
a Monatomic Non-conducting Crystal, I, Fiz. Metal. i Metalloved., 7:495 (1959).
- - - : Note Concerning the Holstein-Primakoff Formalism, Dokl. Akad. Nauk SSSR,
126:1227 (1959).
- - - : A Note Concerning the Formalism of Holstein and Primakoff, Fiz. Metal. i
Meta/loved., 7:669 (1959).
Jacobsen, E. H.: Elastic Spectrum of Copper from Temperature Diffuse Scattering of
X-rays, Phys. Rev., 97 :654 (1955). (Sec. 8-1.)
- - - : Lattice Dynamics and Thermal Diffuse Scattering of X-rays, Rev. Mod. Phys.,
30:234 (1958). (Sec. 8-1.)
Jain, A. L., and R. Jaggi: Piezo-galvanomagnetic Effects in Bismuth, Phys. Rev.,
136:A708 (1964). (Sec. 3-11.)
Jaksic, B.: On the Bloch Integral Equation at Low Temperatures, Nuovo Cimento,
8:282 (1958).
- - - : See also V. Glaser.
James, H. M.: Energy Bands and Wave Functions in Periodic Potentials, Phys. Rev.,
76:1602 (1949). (Sec. A2-1.)
- - - : Conduction in Photoconductive PbS Films, Science, 110:254 (1949). (Sec.
3-11.)
456 INSULATORS, SEMICONDUCTORS, AND METALS
Kanazawa, H.: On the Theory of Plasma Oscillations in Metals, Progr. Theoret. Phys.
(Kyoto), 13:227 (1955). (Sec. 11-7.)
- - - : Coulomb Interactions and the Diamagnetism of Free Electrons, Progr.
Theoret. Phys. (Kyoto), 16:273 (1956); II, 17:1 (1957). (Sec. 11-7.)
- - - : Note on Bloch-Nordsieck Transformation and Electron Lattice Interaction,
Progr. Theoret. Phys. (Kyoto), 17:304 (1957). (Sec. 11-7.)
- - - : On the Subsidiary Conditions in the Bohm-Pines Theory of Electron Plasma,
Progr. Theoret. Phys. (Kyoto), 18:287 (1957). (Sec. 11-7.)
- - - and N. Matsudaira: Diamagnetism of a Dense Electron Gas, Progr. Theoret.
Phys. (Kyoto), 22:463 (1959). (Sec. 11-7.)
- - - and M. Watabe: Green Function Method for Electron Gas. I. General For-
mulation, Progr. Theoret. Phys. (Kyoto), 23:408 (1960). (Sec. 11-7.)
- - - , S. Misawa, and E. Fujita: Green Function Method for Electron Gas. II.
Dispersion Relation of Plasmons, Progr. Theoret. Phys. (Kyoto), 23:426 (1960).
(Sec. 11-7.)
- - - and N. Matsudaira: Green Function Method for Electron Gas. III. Diamag-
netism, Progr. Theoret. Phys. (Kyoto),. 23:433 (1960). (Sec. 11-7.)
Kanazawa, K. K., and F. C. Brown: Cyclotron Resonance in Cadmium Telluride,
Phys. Rev., 136:A1757 (1964). (Secs. 3-8, 3-11.)
Kane, E. 0.: The Influence of Exchange on the Effective Mass Formalism, J. Phys.
Chem. Solids, 6:236 (1958). (Sec. 11-7.)
- - - : Zener Tunneling in Semiconductors, J. Phys. Chem. Solids, 12:181 (1960).
- - - : Spectral Moments and Continuum Perturbation Theory, Phys. Rev., 126:1094
(1962). (Sec. 11-7.)
- - - : Thomas-Fermi Approximation to Impure Semiconductor Band Structure,
Phys. Rev., 131:79 (1963). (Sec. 10-1.)
- - - : Perturbation-moment Method: Application to Band Structure of Impure
Semiconductors, Phys. Rev., 131 :1532 (1963). (Sec. 11-7.)
- - - : Implications of Crystal Momentum Conservation in Photoelectric Emission
from Band-structure Measurements, Phys. Rev. Letters, 12:97 (1964).
Kaner, E. A.: On the Possibility of Introducing an Effective Dielectric Constant at
High Frequencies, Zh. Eksperim. i Teor. Fiz., 31:459 (1956).
- - - : Cyclotron Resonance in a Plasma, Zh. Eksperim. i Teor. Fiz., 33:544 (1957).
(Sec. 3-8.)
- - - and M. Ya. Azbel: On the Theory of Cyclotron Resonance in Metals, Zh.
Eksperim. i Teor. Fiz., 33:1461 (1957). (Sec. 3-8.)
- - - : Concerning the Theory of Cyclotron Resonance, Zh. Eksperim. i Teor. Fiz.,
33:1472 (1957). (Sec. 3-8.)
- - - : On the Theory of Galvanomagnetic and Thermomagnetic effects in Metallic
Films, Zh. Eksperim. i Teor. Fiz., 34:658 (1958). (Sec. 2-4.)
- - - : Cyclotron Resonance in Films, Dokl. Akad. Nauk SSSR, 119:471 (1958).
(Sec. 3-8.)
- - - : On some Peculiarities of Cyclotron Resonance in Metals with Non-convex
Fermi Surfaces, Zh. Eksperim. i Teor. Fiz., 36:962 (1958). (Sec. 3-8.)
- - - : Contribution to the Theory of Absorption of Ultrasonic Waves by Metals in a
Strong Magnetic Field, I, II, Zh. Eksperim. i Teor. Fiz., 38:212 (1960); 39:1071
(1960). (Sec. 3-9.)
----, V. G. Peschanskii, and I. A. Privorotskii: Contribution to the Theory of
Magneto-acoustic Resonance in Metals, Zh. Ek~perim. i Teor. Fiz., 40:214 (1961).
(Sec. 3-9.)
- - - : Theory of Acoustic Cyclotron Resonance in Metals, Zh. Eksperim. i Teor. Fiz.,
43:216 (1962). (Sec. 3-9.)
BIBLIOGRAPHY BOOK LIST 459
Khaikin, M. S.: Cyclotron Resonance in Tin, Zh. Eksperim. i Teor. Fiz., 37:1473
(1959). (Secs. 3-8, 3-11.)
- - - : The Problem of Cyclotron Resonance in Tin, Zh. Eksperim. i Teor. Fiz.,
39:513 (1960). (Secs. 3-8, 3-11.)
- - - ~ Direct Measurement of the Momentum of Conductivity Electrons in a Metal,
Zh. Eksperim. i Teor. Fiz., 41:1773 (1961).
- - - and R. T. Mina: Investigation of the Fermi Surface in Lead by the Cyclotron
Resonance Technique, Zh. Eksperim. i Teor. Fiz., 42:35 (1962). (Secs. 3-8, 3-11.)
- - - : Investigation of the Shape of a Cross-section of the Fermi Surface of Tin,
Zh. Eksperim. i Teor. Fiz., 43:59 (1962). (Sec. 3-11.)
- - - , R. T. Mina, and V. S. Edelman: Cyclotron Resonance and Quantum Oscilla-
tions of the Surface Resistance of Bismuth, Zh. Eksperim. i Teor. Fiz., 43:2063
(1962). (Secs. 3-8, 3-11.)
Khartsiev, V. E.: Simple Methods of Investigation of the Band Structure of Some
Semiconductor Compounds, Zh. Tekhn. Fiz., 27:1713 (1957).
- - - : Investigation of the Symmetry of the Energy Zones of the Compounds CdSb
and ZnSb, Fiz. Tverd. Tela, 4:983 (1962). (Sec. 3-11.)
Khatsishivili, G. R.: On the Overhauser Effect in Non-metals, II, Zh. Eksperim. i
Teor. Fiz., 35:1031 (1958).
Kholodenko, L. P.: Contribution to the Thermodynamical Theory of the Ferro-
Electric Properties of Barium Titanate, Zh. Eksperim. i Teor. Fiz., 31:244 (1956).
(Sec. 8-5.)
Kihare, T., and S. Koha: Convex-core Model of Molecules in Crystalline State, J.
Phys. Soc. Japan, 14:247 (1957).
- - - : See also Y. Midzuno.
Kinase, W., and H. Takahashi: Theory of Spontaneous Deformation of Barium
Titanate, J. Phys. Soc. Japan, 10:942 (1955). (Sec. 8-5.)
- - - , Y. Ishibashi, and K. Matsuura: On the Lattice Vibration of Cubic BaTiOa,
J. Phys. Soc. Japan, 19:264 (1964). (Sec. 8-5.)
- - - , - - - , a n d Y. Kurasawa: On Ferroelectricity and Antiferroelectricity of the
AO.-type Crystal, J. Phys. Soc. Japan, 19:273 (1964). (Sec. 8-5.)
Kindig, N. B., and W. E. Spicer: Band Structure of Cadmium Sulfide-Photoemission
Studies, Phys. Rev., 138:A561 (1965). (Sec. 3-11.)
King, H. W., and T. B. Massalski: Lattice Spacing Relationship and the Electronic
Structure of hep fl-phase Based on Silver, Phil. Mag., 6:669 (1961). (Sec. 3-11.)
- - - : See also T. B. Massalski.
Kingston, A. E.: Van der Waals Forces for the Inert Gases, Phys. Rev., 135:A1018
(1964). (Sec. A5-7.)
Kingston, R.H.: Review of Germanium Surface Phenomena, J. Appl. Phys., 27:101
(1956). (Sec. 3-11.)
Kip, A. F., D. N. Langenberg, B. Rosenblum, and G. Wagoner: Cyclotron Resonance
in Tin, Phys. Rev., 108:494 (1957). (Secs. 3-8, 3-11.)
- - - : Cyclotron Resonance in Metals, Experimental, "The Fermi Surface," John
Wiley & Sons, Inc., New York, 1960, p. 146. (Sec. 3-8.)
- - - : Cyclotron Resonance in Solids, Contemp. Phys., 1:355 (1960). (Sec. 3-8.)
- - - , D. N. Langenberg, and T. W. Moore: Cyclotron Resonance in Cu, Phys.
Rev., 124:359 (1961). (Secs. 3-8, 3-11.)
- - - : See also R. N. Dexter, G; Dresselhaus, C. C. Grimes, F. W. Spong.
Kirsch, J., and P. B. Miller: Doppler-shifted Cyclotron Resonance and Alfven Wave
Damping in Bismuth, Phys. Rev. Letters, 9:421 (1962). (Secs. 3-8, 3-11.)
- - - : Doppler-shifted Cyclotron Resonance and Alfven Wave Damping in Bismuth,
Phys. Rev., 133:A1390 (1964). (Secs. 3-8, 3-11.)
BIBLIOGRAPHY BOOK LIST 463
Klein, M. V.: Phonon Scattering by Lattice Defects, Phys. Rev., 131:1500 (1963).
(Sec. 8-6.)
Kleiner, W.: Excited Donor Levels in Silicon, Phys. Rev., 97:1722 (1955). (Sec.
3-11.)
- - - and L. M. Roth: Deformation Potential in Germanium from Optical Absorp-
tion Lines for Exciton Formation, Phys. Rev. Letters, 2:334 (1959). (Sec. 3-11.)
- - - : See also S. Zwerdling.
Kleinman, D. A., and W. G. Spitzer: Infrared Lattice Absorption of GaP, Phys. Rev.,
118:110 (1960). (Sec. 8-6.)
- - - : Anharmonic Forces in the GaP Crystal, Phys. Rev., 118:118 (1960). (Sec.
8-6.)
Kleinman, L.: Deformation Potentials in Si. I. Uniaxial Strain, Phys. Rev., 128:2614
(1962). (Sec. 3-11.)
- - - : Covalent Bonding in Semiconductors, Semicond. Conf., Exeter, 1962, Institute
of Physics and the Physical Society, London, 1962, p. 552.
- - - : Deformation Potentials in Silicon. II. Hydrostatic Strain and the Electron-
Phonon Interaction, Phys. Rev., 130:2283 (1963). (Sec. 3-11.)
- - - : See also J. Goroff.
Klemens, P. G.: The Scattering of Low-frequency Lattice Waves by Static Imper-
fections, Proc. Phys. Soc. (London), A68:1113 (1955). (Sec. 8-6.)
- - - : On the Theory of Thermal Conductivity of Pure Metals at Low Temperature,
Progr. Theoret. Phys. (Kyoto), 16:154 (1956). (Sec. 8-6.)
- - - : Electrical Resistance Due to Lattice Imperfections in Metals, Can. J. Phys.,
34:1212 (1956). (Sec. 8-6.)
- - - : Thermal Conductivity of Solids at Low Temperatures, "Handbuch der
Physik," vol. 14, Springer-Verlag OHG, Berlin, 1956, p. 198. (Sec. 8-6.)
- - - : Some Scattering Problems in Conduction Theory, Can. J. Phys., 36:441
(1957). (Sec. 8-6.)
- - - : Thermal Resistance Due to Isotopic Mass Variation, Proc. Phys. Soc. (Lon-
don), A70:833 (1957). (Sec. 8-6.)
- - - : Thermal Conductivity and Lattice Vibrational Modes, Solid State Phys.,
7:1 (1958). (Sec. 8-6.)
- - - : Thermal Resistance Due to Isotopes and Other Point Defects, J. Phys. Chem.
Solids, 8:345, 361 (1959). (Sec. 8-6.)
- - - : Deviations from Matthiessen's Rule and Lattice Thermal Conductivity of
Alloys, Australian J. Phys., 12: 199 (1959). (Sec. 8-6.)
- - - : Anharmonic Attenuation of Localized Lattice Vibrations, Phys. Rev., 122:443
(] 961). (Sec. 8-6.)
- - - : Localized Modes and Spin-Lattice Interactions, Phys. Rev., 126:1795 (1962).
(Sec. 8-6.)
- - - : See also J. A. Birch, A. F. A. Harper, W. R. G. Kemp, K. S. Krishnan.
Klemperer, 0., and J. P. G. Shepherd: Characteristic Energy Losses of Electrons in
Solids, Advan. Phys., 12:355 (1963). (Sec. 5-3.)
Klick, C. C., and R. Maurer: The Mobility of Electrons in Diamond, Phys. Rev.,
81:124 (1951). (Sec. 3-11.)
Klimontovich, Yu. L., and S. V. Temko: Quantum Kinetic Equation for a Plasma
with Correlation Taken Into Account, Zh. Eksperim. i Teor. Fiz., 33:132 (1957).
(Sec. 11-7.)
- - - and---: On the Kinetic Equations for a System of Particles Interacting
with Lattice Oscillations, Zh. Eksperim. i Teor. Fiz., 36:1141 (1958).
Klinger, M. I.: Theory of the Hall Effect in Ionic Semiconductors, Zh. Eksperim. i
Teor. Fiz., 29:439 (1955). (Sec. 2-4.)
BIBLIOGRAPHY BOOK LIST 465
Kojima, T.: Electronic States of the F-center in Lithium Fluoride, I, II, J. Phys. Soc.
Japan, 12:908, 918 (1957). (Sec. 3-11.)
Kolodziejczak, J., B. Lax, and Y. Nishina: Semiclassical Dispersion Theory oflnter-
band Magneto-optical Effects, Phys. Rev., 128:2655 (1962).
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Kolomiec, B. T.: Glassy Semiconductors, Semicond. Phys. Conj., Prague, 1960,
Academic Press Inc., New York, 1961, p. 884.
Kolomoets, N. V.: The Thermoelectric Properties of Some Compounds and Alloys
with a Highly Degenerate Electron Gas, Zh. Tekhn. Fiz., 28:936 (1958).
- - - and M. V. Vedernikov: Thermoelectric Properties of Ferromagnetic Metals
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Komatsu, K., and T. Nagamiya: Theory of the Specific Heat of Graphite, J. Phys.
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Komiya, H., K. Masumoto, and H. Y. Fan: Optical and Electrical Properties and
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Kondorskii, E. I., A. V. Cheremushkina, and N. Kurbaniuyazov: Hall Effect in
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Konstantinov, 0. V., and V. I. Perel: Quantum Theory of Spatial Dispersion of
Electric and Magnetic Susceptibilities, Zh. Eksperim. i Teor. Fiz., 37 :786 (1959).
Kontorova, T. A.: On the Question of the Rational Definition of the Mobility of the
Current Carriers in Semiconductors, Zh. Tekhn. Fiz., 26:670 (1956).
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Koonce, C. S.: Collective Strain Splitting of Acceptor States in Silicon, Phys. Rev.,
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Korenblit, I. Ya.: Galvanomagnetic Effects in Bi 2Te, with Anisotropic Scattering,
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Korenblit, L. L., and T. Ya. Shrzifeld: Theory of Well-conducting Semiconductors. I.
Equilibrium of the Electron Gas in Semiconductors. II. Electrical Conductivity,
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Korhonen, U.: On the Deformation of the Electron Distribution of Ions in Some
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Korol, E. N., and K. B. Tolpygo: Dynamics of ZnS-type Crystal Lattices Having
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Korolyuk, A. P., and T. A. Prushchak: A New Type of Quantum Oscillation of the
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468 INSULATORS, SEMICONDUCTORS, AND METALS
Kubo, R.: Interaction between Electrons and Ions in Semiconductors, I, II, III,
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Kucher, T. I., and K. B. Tolpygo: A Many-electron Treatment of the Motion of an
Electron (Hole) in a Deformed Crystal, Zh. Eksperim. i Teor. Fiz., 31:1002
(1956). (Sec. 11-7.)
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Kudinov, E. K.: Energy Spectrum of Holes in Bi 2Te 3, Fiz. Tverd. Tela, 1:1851 (1959).
(Sec. 3-11.)
- - - : Investigation of the Hole Spectrum of Bi 2 Te 3, Fiz. Tverd. Tela, 3:317 (1961).
(Sec. 3-11.)
Kuglin, C. D., M. R. Ellett, and K. F. Cuff: Oscillatory Magnetoresistance inn-type
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Kiimmel, H.: Quantentheoretische Begriindung der Boltzmannschen Stossgleichung,
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Kunzler, J.E., and F. S. L. Hsu: Magneto-thermal Oscillations and the Fermi Surface,
"The Fermi Surface," John Wiley & Sons, Inc., New York, 1960, p. 88.
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in Copper and Their Role in the Determination of the Fermi Surface, Phil. Mag.,
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Kuper, C. G.: On the Bohm-Pines Theory of a Quantum-mechanical Electron Plasma,
Proc. Phys. Soc. (London), A69:492 (Hl.56). (~ec. 11-7.)
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Kurdiani, N. I.: Optical Constants of lnSb in the Visible and Near Ultraviolet Regions
of the Spectrum, Fiz. Tverd. Tela, 6:1797 (1963). (Sec. 3-11.)
Kuriyama, M., and S. Hosaya: Absolute Measurement of X-ray Scattering Factors
472 INSULATORS, SEMICONDUCTORS, AND METALS
of Manganese and Oxygen Atoms in Manganous Oxide, J.' Phys. Soc. Japan,
18:1315 (1963). (Sec. 6-2.)
Kurnick, S. W., and C. Meyer: Determination of the Optical Parameters of the -y
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Kurosawa, T.: Defect in Ionic Crystals. I. Improvement of the Method of Mott and
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(1958).
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Hopping Motion, J. Phys. Soc. Japan, 15:1211 (1960).
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Kurylenko, C.: Brillouin Zones, Electrical Conductivity of Metals, and X-ray K
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LaBahn, R. W., and J. Callaway: Polarization Effects in the Elastic Scattering of
Electrons from Helium, Phys. Rev., 135:A1539 (1964).
Laberrigue, A.: Diffusion des electrons par !'agitation thermique des atomes d'un
cristal, Ann. Phys. (Paris), 4:385 (1959). (Sec. 8-1.)
Lambe, J., and C. C. Click: Les Modeles de centres luminogenes dans Jes sulfures,
J. Phys. Radium, 17:663 (1956).
Lampert, M.A.: Plasma Oscillations at Extremely High Frequencies, J. Appl. Phys.,
27:5 (1956). (Sec. 11-7.)
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Traps, Phys. Rev., 103:1648 (1956).
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J. Appl. Phys., 29:1082 (1958).
- - - , F. Herman, and M. C. Steele: Role of Single Phonon Emission in Low-field
Breakdown of Semiconductors at Low Temperatures, Phys. Rev. Letters, 2:394
(1959).
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Solids, RCA Rev., 20:682 (1959).
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Landau, L. D.: Theory of Fermi Liquids, Zh. Eksperim. i Tear. Fiz., 30:1058 (1956).
(Sec. 11-7.)
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Tear. Fiz., 34:262 (1958). (Sec. 11-7.)
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45:1216 (1954).
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Metallic Conduction, IBM J. Res. Develop., 1:223 (1957).
Landsberg, P. T.: Defects with Several Trapping Levels in Semiconductors, Proc.
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BIBLIOGRAPHY BOOK LIST 473
Miller, P. B., and R.R. Haering: Cyclotron Resonance in Metals with H Perpendicu-
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(Sec. 3-9.)
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Miller, R. A., and C. 8. Smith: Pressure Derivatives of the Elastic Constants of LiF
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Miller, Yu. G.: Investigation of Electrical Transport in Metals and Semiconductors
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(Sec. 2-4.)
Mironov, A. G.: Theory of an Electron Plasma in a Magnetic Field. Effect of the
Coulomb Interaction on the Magnetic Susceptibility, Fiz. Tverd. Tela, 3:1654
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Mitchell, D. L., and R. F. Wallis: Interband Faraday Rotation in Germanium, Phys.
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Mitchell, E.W. J.: A Review of Recent Work on Diamond, J. Phys. Chem. Solids,
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Mitra, G. B., and S. K. Mitra: Griineisen's Rule and the Thermal Expansion of
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Mitra, S. S.: Vibration Spectra of Solids, Solid State Phys., 13:2 (1962). (Sec.
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Mitskevich, V. V.: Dynamical Theory of NaCl-type Ionic Crystals. I. Thermal and
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(1962). (Sec. 8-6.)
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(Sec. 8-6.)
Mitsui, T.: Theory of the Ferroelectric Effect in Rochelle Salt, Phys. Rev., 111 :1259
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Miyakawa, K.: New Derivation of Elastic Equations for Trigonal Holoaxial Crystals,
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Miyake, 8. J.: Theory of Cyclotron Resonance Line Broadening. I. Local Frequency
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Miyata, T., R. Sano, and T. Tomiko: Optical Studies on NaCl Crystals, J. Phys. Soc.
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Miyazawa, H., K. Suzuki, and H. Maeda: Evidence for the (110) Swelling Constant
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Moch, P., M. Balkanski, and P. Aigrain: Structure de bande de rutile deduite des
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Mohanty, G. P., and L. V. Azaroff: Distribution of Electrons in CdS Crystals, Phys.
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-490 INSULATORS, SEMICONDUCTORS, AND METALS
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Mott, N. F.: The Theory of the Formation of Protective Oxide Films on Materials, III,
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Motulevich, G. P., and A. A. Shubin: Role of Interelectron Collisions in Metals in the
Infrared Region of the Spectrum, Zh. Eksperim. i Teor. Fiz., 34:757 (1958).
(Sec. 5-5.)
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characteristics, Zh. Eksperim. i Teor. Fiz., 37 :1770 (1959). (Sec. 5-5.)
Mrozowski, S.: Electrical Resistivity of Interstitial Compounds of Graphite, J. Chem.
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Murao, T.: Screening of Multipolar Interactions in Metals, J. Phys. Soc. Japan,
17 :341 (1962).
Murphy, E. L., and R.H. Good, Jr.: Thermionic Emission, Field Emission, and the
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Murrell, J. N.: The Mobility of Holes and Electrons in Organic Crystals, Mol. Phys.,
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Muser, H. A.: Thermodynamic Treatment of Electronic Processes in Semiconductor
Surface Layers, Z. Physik, 148:380 (1957).
Musgrave, M. J.P., and J. A. Pople: The Stability under Pressure of Crystals with the
Diamond or Zinc Blende Structure, J. Phys. Chem. Solids, 23:321 (1962). (Sec.
10-4.)
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Soc. (London), A272:503 (1963).
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Proc. Phys. Soc. (London), 84:585 (1964).
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Muto, T.: Theory of the F-centers of Colored Alkali Halide Crystals. I. Structure
of the F-absorption Bands. II. Electronic Structure of F-centers-General
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- - - and S. Oyama: Theory of the Temperature Effect of Electronic Energy Bands
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Myasnikova, T. P., and A. F. Yutsenko: Changes in the Infrared Spectra of NH 4 HSO 4 ,
RbHSO,, and (NH,).SO, at Ferroelectric Transitions, Fiz. Tverd. Tela, 4:G5~{
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Myers, A.: Use of High-frequency Sound Waves in the Investigation of Some Elec-
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BIBLIOGRAPHY BOOK LIST 493
Piller, H.: Electron Effective Mass in GaSb Determined by Faraday Rotation Measure-
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Pincherle, L., and J. M. Radcliffe: Semiconducting Intermetallic Compounds, Advan.
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Pines, D., and D. Bohm: Collective Description of Electron Interactions. II. Collec-
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(Secs. 11-6, 11-7.)
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Metals, Phys. Rev., 92:626 (1953). (Secs. 11-6, 11-7.)
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5-3, 11-7.)
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(Sec. 11-7.)
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124:1387 (1961). (Sec. 11-7.)
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Piper, W. W., P. D. Johnson, and D. T. F. Marple: Temperature Dependence of the
Optical Band Gap in ZnS, J. Phys. Chem. Solids, 8:457 (1959). (Sec. 3-11.)
Pippard, A. B.: The Surface Impedance of Superconductors and Normal Metals at
High Frequencies. I. Resistance of Superconducting Tin and Mercury at
1200 Mc/sec. II. The Anomalous Skin Effect in Normal Metals. III. The
Relation between Impedance and Superconducting Penetration Depth, Proc.
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Physica, 16:45 (1949). (Sec. 5-1.)
- - - : The Surface Impedance of Superconductors and Normal Metals at High
J<'requencies. IV. Impedance at 9400 Mc/sec of Single Crystals of Normal and
Superconducting Tin. V. Analysis of Experimental Results for Superconducting
Tin, Proc. Roy. Soc. (London), A203:98, 195 (1950). (Secs. 3-11, 5-1.)
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(London), A66:955 (1952). (Sec. 3-11.)
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A224:273 (1954). (Sec. 5-1.)
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Conj., Brussels, 1954 .
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BIBLIOGRAPHY 8001( ·. LIST 503
Price, P. J.: Anomalous Lorenz Numbers in Mixed Semiconductors, Proc. Phys. Soc.
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Price, W. C., R. D. B. Fraser, T. S. Robinson, and H. C. Longuet-Higgins: The
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Priestley, M. G.: Magnetoresistance of Copper, Silver, and Gold, Phil. Mag., 6:111
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---:Thede Haas-van Alphen Effect in Aluminum, Phil. Mag., 7:1205 (1962).
(Secs. 3-9, 3-11.)
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Prince, E., and W. A. Wooster: Determination of Elastic Constants of Crystals from
Diffuse Reflection of X-rays. III. Diamond, Acta Cryst., 6:450 (1953). (Sec.
8-1.)
Prohofsky, E. W., and J. A. Krumhansl: Second-sound Propagation in Dielectric
Solids, Phys. Rev., 133:A1403 (1964).
- - - : Stimulated Phonon Emission by Supersonic Electrons and Collective Phonon
Propagation, Phys. Rev., 134:Al302 (1964).
Prosser, V.: Band Structure of Selenium from Optical and Photoelectric Properties in
Visible Spectral Region, Semicond. Phys. Conf., Prague, 1960, Academic Press
Inc;, New York, 1961, p. 993. (Sec. 3-11.)
Pulvari, C. F., and W. Kuebler: Phenomenological Theory of Polarization Reversal
in BaTiOa Single Crystals, J. Appl. Phys., 29:1315 (1958). (Sec. 8-5.)
Pyle, I. C.: The Second-order Effect of Free Electrons on Lattice Conduction of Heat,
Proc. Cambridge Phil. Soc., 63:508 (1957).
Quinn, J. J., and R. A. Ferrell: Electron Self-energy Approach to Correlation in a
Degenerate Electron Gas, Phys. Rev., 112:812 (1958). (Sec. 11-7.)
- - - and - - - : Quasi-particle Approach to Interaction in an Idealized Metal,
Plasma Phys.--Accelerators-Thermonucl. Res., 2:18 (196]). (Sec. 11-7.)
- - - and S. Rodriguez: Electrodynamic Properties of Quantum Plasma in Uniform
Magnetic Field, Phys. Rev., 128:2487 (1962). (Sec. 11-7.)
- - - : Range of Excited Electrons in Metals, Phys. Rev., 126:1453 (1962). (Sec.
11-7.)
506 INSULATORS, SEMICONDUCTORS, AND METALS
Rauch, C. J., and C. V. Heer: Some F-band Optical Oscillator Strengths in Additively
Colored Alkali Halides, Phys. Rev., 106:914 (1957). (Sec. 3-11.)
- - - , J. J. Stickler, H.J. Zeiger, and G. S. Heller: Millimeter Cyclotron Resonance
in Silicon, Phys. Rev. Letters, 4:64 {1960). (Secs. 3-8, 3-11.)
- - - : Millimeter Cyclotron Resonance Experiments in Diamond, Phys. Rev. Letters,
7:83 (1961). (Secs. 3-8, 3-11.)
- - - : Millimeter Cyclotron Resonance in Diamond, Semicond. Conj., Exeter, 1962,
Institute of Physics and the Physical Society, London, 1962, p. 276. (Secs.
3-8, 3-11.)
- - - : See also H. J. Zeiger.
Ravich, Yu. I.: Concerning the Theory of Photomagnetoelectric Effects in Semi-
conductors with Complex Energy Bands, Fiz. Tverd. Tela, 2:2366 (1960).
Rayne, J. A.: The Heat Capacity of Copper Below 4.2°K, Australian J. Phys., 9:189
{1956). (Sec. 1-4.)
- - : Heat Capacity of a Brasses below 4.2°K, Phys. Rev., 108:22 {1957). (Sec.1-4.)
- - : Heat Capacity of CuaAu below 4.2°K, Phys. Rev., 108:649 (1957). (Sec. 1-4.)
- - - : Heat Capacity of Dilute Magnesium-Aluminum Alloys below 4.2°K, J. Phys.
Chem. Solids, 7 :268 (1958). (Sec. 1-4.)
- - - : Temperature Dependence of the Absorptivity of Copper in the Near Infrared,
Phys. Rev. Letters, 3:512 (1959). (Sec. 3-11.)
- - - : Optical Properties of Metals, "The Fermi Surface," John Wiley & Sons, Inc.,
New York, 1960, p. 266. (Sec. 5-5.)
- - - : Band Structure of Noble Metal Alloys: Optical Absorption in Cu-Ge Alloys at
4.2°K, Phys. Rev., 121:456 (1961). (Sec. 3-11.)
---and B. S. Chandrasekhar: Fermi Surface of In from Magnetoacoustic Measure-
ments, Phys. Rev., 126:1952 (1962). (Secs. 3-9, 3-11.)
- - - and H. Sell: Magnetoacoustic Oscillations in Tungsten, Phys. Rev. Letters,
8:199 {1962). (Secs. 3-9, 3-11.)
- - - : Magnetoacoustic Oscillations in Thallium, Phys. Letters, 2:128 (1962); 3:256
(1963). (Secs. 3-9, 3-11.)
- - - : Fermi Surface of Thallium from Magnetoacoustic Measurements, Phys. Rev.,
131:653 (1963). (Secs. 3-9, 3-11.)
- - - : Fermi Surface of Tungsten from Magnetoacoustic Measurements, Phys. Rev.,
133:All04 (1964). (Secs. 3-9, 3-11.)
- - - : See also M. A. Biondi, G. B. Brandt, J. G. Castle, Jr.
Rebane, T. K.: Application of the Lattice Model to Semiconductors of the Lead Sulfide
Type, Zh. Eksperim. i Teor. Fiz., 31:353 (1956). (Sec. 3-11.)
Redei, L. B.: The Electronic Properties of Tetrahedral Intermetallic Compounds.
II. Conduction Band in Diamond. III. A Many-electron Model for Calculating
the El~ctronic Excited States in IV-IV Compounds and III-V Compounds with
Zinc-blende Structure, Proc. Roy. Soc. (London), A270:373, 383 (1962). (Sec.
11-1.)
- - - : See also C. A. Coulson.
Rediker, R. H., and A. R. Calawa: Magneto-tunneling in Lead Telluride, J. Appl.
Phys., 32(suppl.):2189 (1961). (Sec. 3-11.)
Redin, R. D., R. G. Morris, and G. C. Danielson: Semiconducting Properties of Mg,Ge
Single Crystals, Phys. Rev., 109:1916 (1958). (Sec. 3-11.)
- - - · : See also R. G. Morris.
Reed, W. A., and J. A. Marcus: Topology of the Fermi Surface of Ga, Phys. Rev.,
126:1298 (1962). (Sec. 3-11.)
- - - and G. F. Brennert: Topology of Fermi Surface of Zn from Galvanomagnetic
Measurements, Phys. Rev., 130:565 (1963). (Secs. 3-9, 3-11.)
508 INSULATORS, SEMICONDUCTORS, AND METALS
Rollins, B. V., and J.P. Russell: Impurity Conduction in Copper Doped Germanium,
Proc. Phys. Soc. (London), 81:571 (1963). (Sec. 3-11.)
Rollins, F. R., Jr., L. H. Taylor, and P. H. Todd, Jr.: Ultrasonic Study of Three-
phonon Interaction. II. Experimental Results, Phys. Rev., 136:A597 (1964).
(Sec. 8-6.)
- - - : See also L. H. Taylor.
Ron, A., and N. Tzoar: Frequency-dependent Relaxation Time of Electron-Phonon
Systems. II. Effects of Finite Lifetime of the Phonon, Phys. Rev., 133:Al378
(1964).
- - - : Dynamics of Degenerate Electron Gas in a Magnetic Field, Phys. Rev.,
134:A70 (1964).
Rose, D. J.: Microplasmas in Silicon, Phys. Rev., 106:413 (1957). (Sec. 3-11.)
Rose, F. W. G., and D. J. Sandiford: An Easy Derivation of the Hole Lifetime in an
n-type Semiconductor with Acceptor Traps, Proc. Phys. Soc. (London), B68:894
(1955).
- - - , E. Billig, and J. E. Parrett: A Simple Derivation of the Thermoelectric Voltage
in a Non-degenerate Semiconductor, J. Electron. Control, 3:481 (1957).
- - - : On the Mass-action Laws in Degenerate Semiconductors, Proc. Phys. Soc.
(London), 71 :699 (1958).
Rose-Innes, A. C.: Observation by Cyclotron Resonance of the Effect of Strain on
Germanium and Silicon, Proc. Phys. Soc. (London), 72:514 (1958). (Secs. 3-8,
3-11.)
- - - : See also R. F. Broom.
Rosenblum, B., and R. C. Duncan, Jr.: Some Quantum Aspects of Cyclotron Resonance
of Negative Masses, Semicond. Phys. Conf., Prague, 1960, Academic Press Inc.,
New York, 1961, p. 606. (Sec. 3-8.)
- - - : See also R. C. Duncan, Jr., A. F. Kip, R. E. Michel.
Rosenstock, H. B., and G. F. Newell: Vibrations of a Simple Cubic Lattice, I, J.
Chem. Phys., 21:1607 (1953). (Sec. 8-6.)
- - - and H. M. Rosenstock: Vibrations of a Simple Cubic Lattice, II, J. Chem.
Phys., 21 :1608 (1953). (Sec. 8-6.)
- - - : Dynamics of the Graphite Lattice, J. Chem. Phys., 21:2064 (1953). (Sec. 8-6.)
- - - : On the Optical Properties of Solids, J. Chem. Phys., 23:2415 (1955). (Sec.
5-5.)
- - - : On the Optical Properties of Solids, II, J. Chem. Phys., 27:1194 (1957). (Sec.
5-5.)
- - - : Critical Points in Three Dimensions, J. Phys. Chem. Solids, 2:44 (1957).
(Sec. 8-6.)
- - - : Vibrations of a One-dimensional Ionic Lattice, Phys. Rev., 111:755 (1958).
(Sec. 8-6.)
- - - : Infrared Absorption by Sodium Chloride-type Lattices, J. Phys. Chem. Solids,
4:201 (1958). (Sec. 8-6.)
- - - and C. C. Click: Vibrational Modes near Impurities, Phys. Rev., 119:1198
(1960). (Sec. 8-6.)
- - - : Infrared Absorption by One-dimensional Ionic Lattices, J. Phys. Chem. Solids,
16 :50 (1960). (Sec. 8-6.)
- - - : Nature of Vibrational Modes in fonif' Crystals, Phys. Re11. 1 121:416 (1961).
(Sec. 8-6.)
- - - : See also W. A. Bowers, J. C. Phillips.
Roth, H., Measurement of the Galvanomagnetic Effects in Pure Tellurium, J. Phys.
Chem. Solids, 8:525 (1959). (Secs. 2-4, 3-11.)
- - - : See also W. Bernard.
BIBLIOGRAPHY BOOK LIST 511
I
Schulz, L. G.: The Experimental Study of the Optical Properties of Metals and the
Relation of the Results to the Drude Free Electron Theory, Adv. Phys., 6:102
(1957). (Secs. 5-4, 5-5.)
514 INSULATORS, SEMICONDUCTORS, AND METALS
Schiitzer, W.: On Bohm-Pines Theory of Plasma, Anais. Acad. Brasil. Cienc., 28:419
(1956). (Sec. 11-7.)
Schweinler, H. C.: Ferroelectricity in the Ilmenite Structure, Phys. Rev., 87:5 (1952).
(Secs. 4-4, 8-5.)
- - - : See also J. H. Crawford, Jr.
Sclar, N.: Neutral Impurity Scattering in Semiconductors, Phys. Rev., 104:1559 (1956).
Scott, A. B., and L. P. Bupp: Equilibrium between F-centers and Higher Aggregates
in KCI, Phys. Rev., 79:341 (1950). (Sec. 3-11.)
Seeger, A.: Zur Elektronentheorie der -Obergangsmetalle, Proc. 10th Solvay Congr.,
Brussels, 1954, p. 329. (Sec. 3-11.)
- - - : On the Electrical Resistivity of Stacking-faults in Monovalent Metals, Can.
J. Phys., 34:1219 (1956). (Sec. 3-11.)
- - - : A Variational Principle for Conduction Phenomena in the Presence of a
Magnetic Field or Asymmetric Scattering Mechanisms, Can. J. Phys., 34:1278
(1956).
- - - : Elektronentheoretische Untersuchungen iiber Fehlstellen in Metallen. I.
Gitterfehlstellen in Nickel, Kobalt, und ihren Legierungen, Z. Physik, 144:637
(1956). (Sec. 3-11.)
- - - and H. Bross: Elektronentheoreticshe Untersuchungen iiber Fehlstellen in
Metallen. II. Die Assoziationsenergie von Leerstellenpaaren in einwertigen
Metallen sowie in -Obergangsmetallen, Z. Physik, 145:161 (1956).
- - - and H. Stehle: Elektronentheoretische Untersuchungen iiber Fehlstellen in
Metallen. IV. Der elektrische Widerstand von Versetzungen, Z. Physik, 146:242
(1956).
- - - , H. Donth, and F. Pfaff: The Mechanism of Low Temperature Mechanical
Relaxation in Deformed Crystals, Discussions Faraday Soc., 23:19 (1957).
- - - and E. Kroner: Theorie der Kleinwinkelstreuung von Rontgenstrahlen und
Neutronen <lurch innere Spannungen in festen Korpern, insbesondere <lurch
Versetzungen, Z. Naturforsch., 14a:74 (1959).
- - - : See also H. Bross.
Seeger, K.: Ionenstreuung warmer Elektronen in nichtentarteten unpolaren Halblei-
tern, Z. Physik, 156:582 (1959).
Seidov, Yu. M., and V. S. Galishev: On the Interaction of the States of Two Zones in
the Single-electron Scheme, Zh. Eksperim. i Tear. Fiz., 30:695 (1956).
Seitz, F.: On the Mobility of Electrons in Pure Non-polar Insulators, Phys. Rev.,
73:549 (1948).
- - - : On the Theory of Electron Multiplication in Crystals, Phys. Rev., 76:1376
(1949).
- - - : Note on the Theory of Resistance of a Cubic Semiconductor in a Magnetic
Field, Phys. Rev., 79:372 (1950). (Sec. 3-10.)
- - - : On the Nature of V-centers in Alkali Halides, Phys. Rev., 79:529 (1950).
(Sec. 3-11.)
- - - : Influence of Plastic Flow on the Electrical and Photographic Properties of
Alkali Halide Crystals, Phys. Rev., 80:239 (1950). (Sec. 3-11.)
- - - : Color Centers in Additively Colored Alkali Halide Crystals Containing
Alkaline Earth Ions, Phys. Rev., 83:134 (1951). (Sec. 3-11.)
- --: See also IL B. Barnes, E. lJ. Condon, H. Frohlich, J. J. Markham, E. Wigner.
Seiwatz, R., and M. Green: 8pace Charge Calculations for Semiconductors, J. A.ppl.
Phys., 29:1034 (1958).
Sekido, K., M. Fukai, and H. Kawamura: Cyclotron Resonance-line Broadening Due
to Ionized Impurity Scattering in Germanium, J. Phys. Soc. Japan, 19:1579
(1964). (Sec. 3-8.)
BIBLIOGRAPHY BOOK LIST 515
Constants of Copper, Silver, Gold, and Nickel in the Infrared Region, Opt. i
Spektroskopiya, 6:176 (1959). (Secs. 3-11, 5-1.)
Shneider, A. D., and I. V. Gavrishchak: The Electrical Properties of p-type Semi-
conductors of the HgTe-CdTe System, Fiz. Tverd. Tela, 6:1208 (1963). (Sec.
3-11.)
Shockley, W.: The Theory of p-n Junctions in Semiconductors and p-n Junction
Transistors, Bell System Tech. J., 28:435 (1949).
- - - : Effect of Magnetic Fields on Conduction-"Tube Integrals," Phys. Rev.,
79:191 (1950). (Sec. 3-10.)
- - - : Cyclotron Resonance, Magnetoresistance, and Brillouin Zones in Semicon-
ductors, Phys. Rev., 90:491 (1953). (Secs. 3-6, 3-8, 3-10.)
- - - and J. T. Last: Statistics of the Charge Distribution for a Localized Flaw in a
Semiconductor, Phys. Rev., 107:392 (1957).
- - - : Electrons, Holes, and Traps, Proc. Inst. Radio Engrs.,' 46:973 (1958).
- - - : Predicted Intervalley Scattering Effects in Germanium, Phys. Rev., 110:1207
(1958). (Sec. 3-11.)
- - - : See also J. Bardeen, K. B. McAfee, F. C. Nix, E. J. Ryder, C. T. Sah, J. C.
Slater, J. R. Tessman.
Shoenberg, D.: De Haas-van Alphen Effect in Aluminium and Antimony, Nature,
167:646 (1951). (Secs. 3-9, 3-11.)
- - - : The de Haas-van Alphen Effect at High Fields, Nature, 170:569 (1952).
(Sec. 3-9.)
---:Thede Haas-van Alphen Effect, Phil. Trans. Roy. Soc., 246:1 (1952). (Sec.
3-9.)
---:Thede Haas-van Alphen Effect, Physica, 19:791 (1953). (Sec. 3-9.)
- - - : The de Haas-van Alphen Effect in Copper, Nature, 183:171 (1959). (Secs.
3-9, 3-11.)
- - - : The de Haas-van Alphen Effect in Copper, Silver, and Gold, Phil. Mag.,
6:105 (1960). (Secs. 3-9, 3-11.)
- - - : The de Haas-van Alphen Effect, "The Fermi Surface," John Wiley & Sons,
Inc., New York, 1960, p. 74. (Sec. 3-9.)
- - - : The de Haas-van Alphen Effect and the Electronic Structure of Metals,
Proc. Phys. Soc. (London), 79:1 (1962). (Sec. 3-9.)
- - - : The Fermi Surfaces of Copper, Silver, and Gold. I. The de Haas-van Alphen
Effect, Phil. Trans. Roy. Soc. London, A256:85 (1962). (Secs. 3-9, 3-10, 3-11.)
- - - : See also J. S. Dhillon.
Shogenji, K., and T. Sato: Oscillations of the Magnetoresistance _in p-type PbTe
Crystals, J. Phys. Soc. Japan, 18:146 (1963). (Secs. 3-10, 3-11.)
- - - : See also E. Yamada.
Shubenko, A. F., and S. V. Lapskii: The Optical Properties of Sb2Sa Single Crystals,
Fiz. Tverd. Tela, 4:449 (1962). (Sec. 3-11.)
Shull, H., and P. 0. Lowdin: Correlation Splitting in Helium-like Ions, J. Chem. Phys.,
25:1035 (1956).
- - - : See also P. 0. Lowdin.
Silin, V. P.: On the Theory of a Degenerate Electron Gas, Zh. Eksperim. i Tear. Fiz.,
33:495 (19fi7). (Sec. J 1-7.)
- - - : Oscillations of a Fermi Liquid in a Magnetic Field, Zh. Eksperim. i Tear. Fiz.,
33:1227 (1957). (Sec. 11-7.)
- - - : A Theory of an Anomalous Skin Effect in Metals, Zh. Eksperim. i Tear. Fiz.,
33:1282 (1957). (Sec. 5-1.)
- - - : On the Optical Properties of Metals in the Infrared Region, Zh. Eksperim.
i Tear. Fiz., 34:707 (1958). (Sec. 5-5.)
BIBLIOGRAPHY BOOK LIST 517
Stachowiak, H.: On the Open Electronic Orbits in Magnetic Field for Fermi Surface
in the Form of a Net, Bull. Acad. Polon. Sci. Ser. Sci. Tech., 10:409 (1962).
(Sec. 3-10.)
- - - : Open Electronic Orbits in a Magnetic Field for the Case of Fermi Surfaces
in the Form of a Net, Acta Phys. Polan., 23:383 (1963). (Sec. 3-10.)
Stark, R. W., T. G. Eck, W. L. Gordon, and F. Moazed: Magnetoresistance Investi-
gation of the Fermi Surface of Magnesium, Phys. Rev. Letters, 8:360 (1962).
(Secs. 3-10, 3-11.)
- - - : Oscillatory Magnetic Breakdown in Zinc, Phys. Rev. Letters, 9:482 (1962).
(Sec. 3-11.)
- - - , T. G. Eck, and W. L. Gordon: Galvanomagnetic Investigation of the Fermi
Surface of Magnesium, Phys. Rev., 133:A443 (1964). (Sec. 3-11.)
- - - : Magnetic Breakdown Effects in the Galvanomagnetic Properties of Zinc,
Phys. Rev., 135:A1698 (1964). (Sec. 3-11.)
Stasyuk, I. V., and A. E. Glauberman: The Many-electron Theory of Semiconductors
with Impurities, Ukr. Fiz. Zh., 6:642 (1961). (Sec. 11-7.)
- - - : See also A. E. Glauberman.
Statz, H., and G. A. de Mars: Electrical Conduction via Slow Surface States on Semi-
conductors, Phys. Rev., 111:169 (1958).
Stavitskaya, T. S., and L. S. Stilbans: The Effect of Degeneration on the Efficiency
of Semiconductor Thermoelectric Cells, Zh. Tekhn. Fiz., 28:484 (1958).
Steele, M. C.: Application of the Theory of Numbers to the Magnetic Properties of an
Electron Gas, Phys. Rev., 88:451 (1952).
- - - and J. Babiskin: Oscillatory Thermomagnetic Properties of a Bismuth Single
Crystal at Liquid Helium Temperatures, Phys. Rev., 98:359 (1955). (Sec. 3-11.)
- - - : Oscillatory Galvanomagnetic Properties of Antimony Single Crystals at
Liquid Helium Temperatures, Phys. Rev., 99:1751 (1955). (Secs. 3-8, 3-11.)
- - - : See also T. G. Berlincourt, T. Hattori, M. A. Lampert.
Stehle, P.: Calculation of Electron-Electron Scattering, Phys. Rev., 110:1458 (1958).
Steigmeier, E. F., and B. Abeles: Scattering of Phonons by Electrons in Ge-Si Alloys,
Phys. Rev., 136:Al149 (1964).
Steinberg, M. S.: Viscosity of the Electron Gas in Metals, Phys. Rev., 109:1486 (1958).
- - - : Magnetic Effects in the Attenuation of Transverse Acoustic Waves by Con-
duction Electron Transport, Phys. Rev., 110:772 (1958). (Sec. 3-9.)
- - - : Resonant Absorption of Sound in Metals, Phys. Rev., 110:1467 (1958).
(Sec. 3-9.)
- - - : Ultrasonic Attenuation and Dispersion in Metals at Low Temperatures,
Phys. Rev., 111 :425 (1958). (Sec. 3-9.)
Stephen, M. J., and A. B. Lidiard: The Faraday Effect in Semiconductors, J. Phys.
Chem. Solids, 9:43 (1959). (Sec. 3-8.)
- - - and K. Zalewski: On the Classical Approximation Involved in the Thomas-
Fermi Theory, Proc. Roy. Soc. (London), A270:435 (1963). (Sec. 10-1.)
Stern, E. A., and R. A. Ferrell: Surface Plasma Oscillations of Degenerate Electron
Gas, Phys. Rev., 120:130 (1960). (Sec. 11-7.)
- - - : The Effect of Interactions on Determination of Fermi Surfaces, "The Fermi
Surface," John Wiley & Sons, Inc., New York, 1960, p. 50. (Sec. 11-7.)
- - - : Correlation EffectR ou Electronic Spccifir Heat of Na, Phys. Rev., 121:397
(1961). (Sec. 11-7.)
- - - : Effect of Interactions on Determination of Fermi Surfaces, Phys. Rev.,
112:1773 (1961). (Sec. 11-7.)
- - - : Point-by-point Mapping of the Fermi Surface, Phys. Rev. Letters, 10:91 (1963).
BIBLIOGRAPHY BOOK LIST 523
---,J.C. McGroddy, and W. E. Harte: Polar Reflection Faraday Effect in Metals,
Phys. Rev., 136:Al306 (1964).
- - - : See also H. S. Bennett, R. A. Ferrell.
Stern, F., and R. M. Talley: Impurity Band in Semiconductors with Small Effective
Mass, Phys. Rev., 100:1638 (1955).
- - - and - - - : Optical Absorption in p-type Indium Arsenide, Phys. Rev.,
108:158 (1957). (Sec. 3-11.)
- - - : Effects Associated with a Linear Energy Term in the Valence Band of Inter-
metallic Semiconductors, J. Phys. Chem. Solids, 8:277 (1959).
- - - : Aspherical 3d Electron Distribution in Body-centered Cubic Metals, Phys.
Rev. Letters, 6:675 (1961).
- - - : Elementary Theory of the Optical Properties of Solids, Solid State Phys.,
16:300 (1963). (Sec. 5-5.)
- - - : Dispersion of the Index of Refraction near the Absorption Edge of Semi-
conductors, Phys. Rev., 133:A1653 (1964). (Sec. 5-5.)
- - - : See also R. F. Guertin, G. Lasher.
Sternglass, E. J.: Origin of the Characteristic Energy Losses of Electrons in Solids,
Nature, 178:1387 (1956). (Sec. 11-7.)
Sternheimer, R. M.: Electronic Polarizabilities of Ions from the Hartree-Fock Wave
Equations, Phys. Rev., 96:951 (1964). (Sec. A5-7.)
- - - : Electronic Polarizability of Atoms, Phys. Rev., 107:1565 (1957). (Sec. A5-7.)
Stevenson, M. J.: Cyclotron Resonance in CdAs2, Phys. Rev. Letters, 3:464 (1959).
(Secs. 3-8, 3-11.)
- - - : Cyclotron Resonance in II-V Semiconductors, Semicond. Phys. Conj., Prague,
1960, Academic Press Inc., New York, 1961, p. 1083. (Secs. 3-8, 3-11.)
- - - : See also D. C. Mattis.
Stewart, A. T., and B. N. Brockhouse: Vibration Spectra of Vanadium and an Mn-Co
Alloy by Neutron Spectroscopy, Rev. Mod. Phys., 30:250 (1958). (Sec. 8-1.)
- - - : Li-Mg, a Nearly Free-electron Alloy, Phys. Rev., 133:A1651 (1964). (Sec.
3-11.)
- - - : See also B. N. Brockhouse, A. D. B. Woods.
Stickler, J. J., H.J. Zeiger, and G. S. Heller: Quantum Effects in Ge and Si, I, Phys.
Rev., 127:1077 (1962). (Sec. 3-11.)
- - - : See also C. J. Rauch.
Stiervalt, D. L., and R. F. Potter: Lattice Absorption Bands Observed in Silicon by
Means of Spectral Emissivity Measurements, J. Phys. Chem. Solids, 23:99
(1962). (Sec. 5-5.)
Stilbans, L. S., B. I. Bok, and E. L. Lifshits: On a Carrier Scattering Mechanism in
Lead Telluride, Dokl. Akad. Nauk SSSR, 111:1011 (1956). (Sec. 3-11.)
- - - : The Scattering Mechanism of Carriers on Phonon and Lattice Defects, J.
Phys. Chem. Solids, 8:123 (1959).
- - - : See also E. Gershtein, 0. A. Golikova, A. F. Joffe, T. S. Stavitskaya.
Stiles, P. J., E. Burstein, and D. N. Langenberg: De Haas-van Alphen Effect in p-type
PbTe and n-type PbS, J. Appl. Phys., 32(suppl.) :2174 (1961). (Secs. 3-9, 3-11.)
- - - , - - - , and - - - : Observations of de Haas-van Alphen Oscillations in
p-type PbTe, Phys. Rev. Letters, 6:667 (1961). (Secs. 3-9, 3-11.)
- - - , - - - , and---: Azbel-Kaner Cyclotrnn Resonance in p-type Pb Te, Phys.
Rev. Letters, 9:257 (1962). (Sec.s. 3-8, 8-11.)
- - - , - - - , and - - - : Landau Level Studies in p-type PbTe: Azbel-Kaner
Type Cyclotron Resonance, Semicond. Conj., Exeter, 1962, Institute of Physics
and the Physical Society, London, 1962, p. 577. (Secs. 3-8, 3-11.)
524 INSULATORS, SEMICONDUCTORS, AND METALS
Absorption Edge of BaTi03 and Ti0 2, J. Phys. Chem. Solids, 10:343 (1959).
(Sec. 5-5.)
- - - and H. G. Drickamer: The Effect of Pressure on the Absorption Edge of
Certain Molecular Compounds, J. Phys. Chem. Solids, 11:111 (1959). (Sec.
5-5.)
Suchet, J. P.: Regles de prediction de la semiconductibilite dans les reseaux cristalins
mineraux, J. Phys. Chem. Solids, 12:74 (1959).
- - - : Rayons atomiques, electronegativites et energies d'activation dans les com-
poses semiconducteurs mineraux, J. Phys. Chem. Solids, 16:265 (1960).
- - - : Ionicites, charges effectives et mobilites electroniques dans les composes
semiconducteurs mineraux, J. Phys. Chem. Solids, 21 :156 (1961).
Sueoka, 0.: Plasma Oscillation of Electrons in LiF, J. Phys. Soc. Japan, 19:2239
(1964).
- - - and F. Fujimoto: Plasma Oscillation of Electrons in Alloy. II. Ag-Au Alloy,
J. Phys. Soc. Japan, 20:569 (1965).
- - - : See also F. Fujimoto.
Suffczynski, M.: The Optical Properties of the Noble Metals, Proc. Phys. Soc. (Lon-
don), 73:671 (1959). (Sec. 3-11.)
- - - and S. Michaelson: A Calculation of the Optical Constants of Noble Metals,
Proc. Phys. Soc. (London), 76:802 (1960). (Sec. 3-11.)
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Phys. Soc. (London), 77:1042 (1961). (Secs. 3-8, 3-11.)
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(Sec. 3-11.)
Sugihara, K., and H. Sato: Electrical Conductivity of Graphite, J. Phys. Soc. Japan,
18:332 (1963). (Sec. 3-11.)
Sugiyama, K., and A. Kobayashi: Piezoresistance and Magnetoresistance in Impurity
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Buhl, H., and N. R. Werthamer: Higher Random-phase Approximations in the Many-
body Problem, Phys. Rev., 122:359 (1961). (Sec. 11-7.)
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The Localized Moment, Phys. Rev., 131:1063 (1963). (Sec. 11-7.)
Sullivan, J. J.: Lattice Vibrations of Wurtzite Structure Crystals, J. Phys. Chem.
Solids, 26:1039 (1964). (Sec. 8-6.)
Supek, I.: Elektrische Leitfahigkeit der Metalle bei tiefen Temperaturen, Z. Physik,
149:324 (1957).
Buris, R. A.: Theory of a System of Interacting Fermi Particles, Fiz. Tverd. Tela,
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Bussmann, G.: -Ober den Impuls der Schallquanten, I, II, Z. Naturforsch., lla:1
(1956); 13a:1 (1958).
Bussmann, J. A., and A. Thellung: Thermal Conductivity of Perfect Dielectric Crystal
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Sutton, P. M.: Computation of Mean Debye Temperature of Cubic Crystals from
Elastic Constants, II, Phys. Rev., 99:1826 (1955). (Sec. 8-6.)
Suzuki, H., M. Hattori, and K. Ariyama: Theory of Cyclotron Resonance in Aniso-
tropic Metals, J. Phys. Soc. Japan, 16:1947 (1961). (Sec. 3-8.)
- - - and K. Ariyama: Cyclotron Resonance in Thin Metallic Films, J. Phys. Soc.
Japan, 17:704 (1962). (Sec. 3-8.)
- - - : See also K. Hashimoto, M. Hattori.
Suzuki, T.: Electron Distribution in Cu 20 Crystal, J. Phys. Soc. Japan, 16:501 (1961).
Swalen, J. D., and J. de Heer: Many-parameter Alternant Molecular Orbital Calcula-
526 INSULATORS, SEMICONDUCTORS, AND METALS
tions for Large Cyclic Systems with Closed-shell Structure, J. Chem. Phys.,
40:378 (1964). (Sec. 10-4.)
Swan, J. B.: Characteristic Electron Energy Losses in Sodium and Potassium, Phys.
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Swanson, J. A.: Saturation Hall Constant of Semiconductors, Phys. Rev., 99:1799
(1955). (Sec. 2-4.)
Syrkin, L. N.: Investigation of the Form of the Potential Contour for Ions in Perov-
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Szasz, L.: -Ober die Erweiterung der Hartree-Fockschen Nii.herung <lurch Korrela-
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forsch., 16a:909 (1960). (Sec. 11-7.)
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(See. 11-7.)
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Szigeti, B.: Polarizability and Dielectric Constant of Ionic Crystals, Trans. Faraday
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(London), A204:51 (1950). (Secs. 8-6, !l-5.)
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Soc. (London), A262:217 (1959). (Sec. 8-6.)
- - - : The Infrared Spectra of Crystals, Proc. Roy. Soc. (London), A268:377 (1960).
(Secs. 5-5, 8-6.)
- - - : The Magnitude of the Anharmonic Contribution to the Static Dielectric
Constant, Proc. Roy. Soc. (London), A261:274 (1961). (Sec. 8-6.)
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Solids, 24:225 (1963). .
Sziklas, E. A.: Collective Oscillations in a Dense Electron Gas Containing a Fixed
Point Charge, Phys. Rev., 138:Al070 (1965).
Taft, E. A., and L. Apker: Photoelectric Emission Associated with /3-band Absorption
in Alkali Iodides, J. Chem. Phys., 20:1648 (1952). (Secs. 3-11, 5-5.)
- - - , H. R. Philipp, and L. Apker: Photoelectric Emi8sion from the Valence Band
in AgBr, Phys. Rev., 110:876 (1958). (Sec. 3-11.)
- - - and - - - : Optical Properties of Graphite, Phys. Rev., 138:A197 (1965).
(Secs. 3-11, 5-5.)
- - - : See also L. Apker, H. R. Philipp.
Takagi, S.: On the Temperature Diffuse Scattering of Electrons. I. Derivation of
General Formulae. II. Applications to Practical Problems, J. Phys. Soc. Japan,
13 :278, 287 (1958). (Sec. 8-1.)
Takagi, Y.: Ferroelectricity and Antiferroelectricity of Some Ionic Crystals, Proc.
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Takahasi, H.: Tables of Lorentz l<'ields for Cubic Lattice, J. Phys. Soc . .Japan, 19 :499
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Tamashke, 0.: Uber die mathematischen Grundlagen der quantenmechanischen
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BIBLIOGRAPHY BOOK LIST 527
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(1963). (Secs. 3-10, 3-11.)
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23:891 (1955).
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(Secs. 11-6, 11-7.)
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Soc. Japan, 8:339 (1953).
olpygo, K. B., and A. M. Fedorchenko: Interaction between an Electron Hole
and Lattice Oscillations in a Homopolar Crystal, Zh. Eksperim. i Teor. Fiz.,
31 :845 (1956). (Sec. 8-6.)
- - - and I. H. Zaslavska: The Spectrum of Natural Osc1llations of NaCl Taking
Account of Ionic Deformation, Ukr. Fiz. Zh., 1:226 (1956). (Sec. 8-6.)
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Zh., 2:242 (1957). (Sec. 8-6.)
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E. I. Kaplunova, E. N. Korol, T. I. Kucher, V. S. Mashkevich.
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rolub, A. V.: The Influence of the Electron-Phonon Interaction on the Cyclotron
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fermion Problems, Prog. Theoret. Phys. (Kyoto), 6:544 (1950). (Sec. 11-7.)
roombs, G. A.: On the Theory of Electronic Conductivity, Proc. Phys. Soc. (London),
84:451 (1964).
530 INSULATORS, SEMICONDUCTORS, AND METALS
Tosi, M. P., and F. G. Fumi: The Interaction between Equilibrium Defects in the
Alkali Halides: The "Ground State" Binding Energy of the Vacancy Pair, Nuovo
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- - - and G. Airoldi: The Interaction between Equilibrium Defects in the Alkali
Halides: The "First Excited State" Binding Energies of the Impurity Complex
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(1963). (Sec. 10-4.)
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Alkali Halides. II. The Generalized Huggins-Mayer Form, J. Phys. Chem.
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(Sec. 10-4.)
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Tosima, S., J. J. Quinn, and M. A. Lampert: Effect of Collisions on the Magneto-
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Tovstyuk, K. D., and D. M. Berche: Band Symmetry in Crystals Belonging to
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Toxen, A. M., and S. Tausal: Giant Oscillations in the Magnetoacoustic Attenuation
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Toya, T.: Lattice Vibration and Thermal Expansion of Monovalent Metals, J. Res.
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Tredgold, R. H.: On the Exchange Interaction in the Collective Electron Approxima-
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(Sec. 11-7.)
Trubitsyn, V. P.: The Equation of State of Metals by a Statistical Method, Fiz.
Tverd. Tela, 2:898 (1960). (Sec. 10-1.)
Tsertsvadze, A. A., Yu. V. Chkhartishvili, and Z. S. Kachlishvili: Calculation of
the Ionic and Atomic Components of the Bonds in SiC Crystals, Fiz. Tverd.
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Tsidilkovskii, I. M.: Adiabatic Galvano- and Thermomagnetic Phenomena in Semi-
conductors. I. Impurity Semiconductors, Zh. Tekhn. Fiz., 28:1371 (1958).
(Sec. 2-4.)
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Tsuchida, A., and K. Ohno: "Bond-Orbital" and "Modified Electron-pair" Calcula-
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valent Metals. II. The Thermoelectric Power for Anisotropic Media. III.
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BIBLIOGRAPHY BOOK LIST 531
Tsvirko, Yu. A., and M. A. Tolmazina: On the Boundary Conditions for Electro-
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Tucker, C. W., Jr., and P. Senio: X-ray Scattering Effects Due to Localized Static
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Tulub, A. V.: The Phonon Interaction of Electrons in Polar Crystals, Zh. Eksperim.
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Turchin, V. F.: Multiphonon Processes in Crystals, Zh. Eksperim. Teor. Fiz., 33:124
(1957).
Turik, A. V.: Theory of Polarization and Hysteresis of Ferroelectrics, Fiz. Tverd. Tela,
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Tyablikov, S. V.: An Adiabatic Form of Excitation Theory in the Problem of Exchange
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(1951). (Sec. 11-7.)
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Uchiyama, Y.: The Influence of Interelectronic Collision on Conduction in Non-polar
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Ueda, S.: The Pair Correlation Function of an Imperfect Electron Gas in High Densi-
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Uemura, Y., and M. Inoue: The Change of Carrier Concentration in the Simple Semi-
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Ukhanov, Yu. I.: Faraday Effect in Silicon in the Infrared Region of Wavelengths,
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Umeda, J.: Galvanomagnetic Effects in Mg 2Sn, J. Phys. Soc. Japan, 19:2052 (1964).
(Sec. 3-11.)
Umeda, K., and S. Kobayashi: Thomas-Fermi Function for Impurity Atom Dissolved
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Van Bueren, H. G.: Influence of Lattice Defects on the El~ctrical Properties of Cold-
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Van den Beukel, A.: On the Theory of the Acousto-electric Effect, Appl. Sci. Res.,
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Van der Leeden, P.: On Critical Points, Physica, 21:743 (1955). (Sec. 8-6.)
532 INSULATORS, SEMICONDUCTORS, AND METALS
Van der Pauw, L. J., and D. Polder: The Photo-thermoelectric Phenomenon in Semi-
conductors, J. Electron., 2:239 (1956).
Van Hove, L.: Occurrence of Singularities in the Elastic Frequency Distribution of a
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(Sec. 11-7.)
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Van Kampen, N. G.: The Dispersion Equation for Plasma Waves, Physica, 23:641
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Van Kranendonk, J.: Theory of Induced Infrared Absorption, Physica, 23:825 (1957).
(Sec. 5-5.)
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Van Roosbroeck, W.: Theory of the Photomagnetoelectric Effect in Semiconductors,
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Van Vliet, K. M.: On the Equivalence of the Fokker-Planck Method and the Free-
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Varley, J. H. 0.: The Thermal Expansion of Pure Metals and the Possibility of Nega-
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(Sec. 8-6.)
Vasileff, H. D.: Electron Self-energy and Temperature-dependent Effective Masses in
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Vavilov, V. S.: On Photo-ionization and Ionization by Fast Electrons in Germanium
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- - - and K. I. Britsyn: The Effect of a Strong Electric Field on the Absorption of
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Veelken, R.: On the Theory of the Electrical Transitions in Alkali Halides. I. The
Exchange Interaction Potential between Fast Electrons and Lattice Vibrations
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Velasco, M., M. L. Canut, and J. L. Amoros: Estudios acerca de la dinamica reticular
en cristales moleculares. I. Difraccion difusa de! acide oxalico dehidratado.
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Verkin, B. I., I. M. Dmitrenko, and B. G. Lazarev: Effect of Hydrostatic Pressure
on Magnetic Properties of Monocrystalline Bismuth at Low Temperatures,
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Zh. Eksperim. i Teor. Fiz., 32:156 (1957).
Verwey, E. J. W.: Oxi_dic Semi-conductors, from "Semi-conducting Materials,''
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BIBLIOGRAPHY BOOK LIST 533
Vorobev, A. A.: The Refraction of Light in Crystals and the Energy of the Bonds
between Ions, Dokl. Akad. Nauk SSSR, 112:53 (1957). (Sec. 5-5.)
Vul, B. M., and B. I. Segal: Theory of the p-n Junctions in Semiconductors, Zh.
Tekhn. Fiz., 28:681 (1958).
Vyatskin, A. Y.: On the Theory of Inelastic Scattering of Electrons in a Solid Body,
Fiz. Tverd. Tela, 2:122 (1960).
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Tverd. Tela, 2:887 (1960).
Wagner, E. H.: Zur Beugung paralleler Lichtbundel an laufenden Ultraschallwellen.
I. II. III. Strenge Liisung des Beugungsproblems fur divergente Lichtbundel
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Wagner, H.: Rontgenstrahlung anomaler Schwiichung im Falle Braggscher Reflexion,
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Wakoh, S., and J. Yamashita: Fermi Surface of Ni, J. Phys. Soc. Japan, 19:1342
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Walker, C. B.: X-ray Study of Lattice Vibrations in Aluminum, Phys. Rev., 103:547
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(Sec. 8-1.)
Walker, W. C., 0. P. Rusgi, and G. L. Weissler: Optical Transmission of Evaporated
In, Sn, and Bi Films in the Vacuum Ultraviolet, J. Opt. Soc. Am., 48:1017 (1958).
(Sec. 3-11.)
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Wallace, D. C.: Anharmonic Free Energy of Crystals at Low Temperatures and at
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(Sec. 10-4.)
Waller, I., and S. 0. Lundqvist: Some Remarks on the Role of Overlapping in the
X-ray Scattering by Crystals, Arkiv Fysik, 7:121 (1953).
Walling, J.C., and P. B. Bunn: The Electronic Specific Heats of Some Nickel Cobalt
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Wallis, R. F.: Effect of Free Ends on the Vibration Frequencies of One-dimensional
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conductors in Magnetic Fields, J. Phys. Chem. Solids, 7:78 (1958).
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Lattices, Phys. Rev., 116:302 (1959). (Sec. 8-6.)
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Impurities, J. Phys. Chem. Solids, 8:318, 336 (1959).
BIBLIOGRAPHY BOOK LIST 535
l
le
i
I
H 6 molecule, 260-262, 271
Hagen, E., 117
Hall, E. H., 36
INDEX