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Experiment 5 1
Experiment 5 1
Experiment 5 1
VTC and noise margin analysis
∂Vout
VOH , VIH , VIL and VOL are taken where the slope, ∂Vin = −1.
Experiment 5 2
Red - 300n, Green - 450n, Purple - 600n, Teal - 750n, Pink - 900n, Grey - 1.05u
We can observe that since the curve is shifting right (while increasing width of
the MOSFETs) with almost unchanged VOH and VOL , NM H (noise margin
high) reduces slightly by about 4% when W = 1μm while NM L (noise margin
low) increases significantly by 13.6% when with the same width increase.
Experiment 5 3
Rise Time and Fall Time
Here although for same width, the PMOS should offer higher resistance and then fall
time should be less than the rise time, the fall time is limited by CL .
Experiment 5 4
Propagation delays
From the above table we conclude that propagation delay decrease with
increase in width of MOSFETs.
Experiment 5 5
Power
Red - 300n, Green - 450n, Purple - 600n, Teal - 750n, Pink - 900n, Grey - 1.05u
We can observe that both average and peak power increased when W is
increased.
Experiment 5 6
Red : -20 C, Green : 0 C, Purple : 20 C, Teal : 40 C, Pink : 60 C, Grey : 80 C
Experiment 5 7