TOSHIBA PHOTOCOUPLER SEMICONDUCTOR TOSHIBA TEP 181 TECHNICAL DATA Gans RED & PHOTO—TRANSISTOR cx ‘ice MACH tit in mm PaRaMMAsLE CONTROMLERS se /be.mpuT MODULE TELECOMMUNICATION I i ee TOSEBA MINT FLAT COUPLER THPIE i mull ning : Coupe ultuble fr sorte mount anny. TEPIBI cnet « photo tems opty coupled oa gation — | TT trenie Inaredcntag de ina four lend plastic DIP package, | ‘ao Cotleson miter Vase sovin) alia Current Transfer Ratio 50% (Min) = Rank CB 100% (Min,) fot yoene Tato Vege 060m in) Ur Regnines LAG Pte No. Ba7040 Senee pv connicueatton ro? view iad = frostipa —aiaci Weighty Oe 4: EMITTER 8 : COLLECTOR © Waseem aeons sna ine mara gem. meme mar eee aeSEMICONDUCTOR TOSHIBA TEP 184 TECHNICAL DATA avian ‘CURRENT TRANSFER RATIO crass PURRENT TRANSFER RATIO) type | FICATION [7 >menn, Von=sv, Tesoro a MIN, MAX. (Gene) 50 200 Tanke ¥ = 160 mis: |" Rank GR 100 300 Renk BL 200 00 Rank GB. 100 00 CGH BBE GE X, Rank GB : TLPIS1 (GB) Note: Application, type neme for certification test, please use standard product type name, Le. ‘TLPIS1 (GB) : TLPIS1SEMICONDUCTOR TOSHIBA TEP 184 TECHNICAL DATA a MAXIMUM RATINGS Ta 2250 CHARACTERISTIC syunou | Rama | UNF Torand Canes wm = Peron Cuont Ding aipeg [arene [mare 8 |e Forward Carne ep [Ten po Tees) Reve Vang Ve a v Tancen Teapots ro o Calls Eniuer Vola Vena 30 ¥ [Bote Cole Vlogs Veco 7 v 5 [Collector Current Tc. 50 mA E |coletar Power Diao Gad Fo isn at # |Collector Power Dissipation Derating 5 Por a rawr (1 Cirewit Ta 25°C) Pole e wire Sanction Temperate q a = Sage Tapert Range Ta Z5=105 o Operating Tepertare Range 7 Sseai0 c esd Soldering Temperature Ta 0c) © Tal Fachage Powe Diipdon rr 200 a Teal Fuckage Power Disipeon Deralag EEG) —[ ary PO Saws ation Voge ee Note 1 Device considered a two-terminal device : Pin 1, 3 shorted together and pins 4, 6 Shorted tether 7 ———SEMICONDUCTOR TLP181 TOSHIBA TECHNICAL DATA INDIVIDUAL ELECTRICAL CHARACTERISTICS (Ta =25°C) CHARACTERISTIC | SYMBOL ‘TEST CONDITION Mav. | TP. [MAx. [UNIT] 7 [Forward Vollage We [tp=i0mA io [ais] ta] v 3 [Reverse Current Tr___|VR=5v —|— [la Capacitance Op | V=0, f= 1Mes — | a0 [= |r Callartor mitinr Breakdown Voltage _|Y (BR) CEO] 10=0-5mA i-t-|% Emitter Collector S| Breakdown Volige RECO He~0.1mA 7} -|-|% 8 ‘Voge =48V, (Ambient Light oor | Oa] | Collector Dark Current | Iggo [Zou 10001? $2.) 0) a Vor=48V, Te=86°0, (Ambient |_| 2] 50] Light Below 1000 bx ) | 6o |“ Capacitance = (Collector to Emitter) | CCB | V=0: f= 1MHE ~) *i = | COUPLED ELECTRICAL CHARACTERISTICS (Ta=25°0 CHARACTERISTIC | SYMBOL ‘TEST CONDITION Mav. | TP. [MAx. [UNIT] nt Transfer Rati Tr—6u, Vou —OV so | — | coo Current Transfer Ratio | Ig/Ip tank 08 [aert tee] ® ; Ip=ImA, Vop=04V — | [= Saturated CTR ce (oat) une ow [ae % Collestor-Bmitter Sa = Set ollector Emitter Saturation Soneee Ver tea “en = |o2l—]v Rank oB_ | — | — | 04 OFF State Collector Current _| Towam | Ve=0.7V, Vor=48V, =i To Toa ISOLATION CHARACTERISTICS (Ta =25%O) CHARACTERISTIC [SYMBOL] TEST CONDITION man. | TYP. [MAX. [UNIT] ‘Gaposttance = input to Output) Cs | Vs=0¥, FIM = [08 | = | Isolation Resistance Rs __| Vs=500v sx10%4 0 [ — [a ‘AC, 1 minute si0| — | = |, Isolation Voltage BVs | _AC, 1 second, in oil = {10000f — | ** DC, 1 minute, in oll = [10000[ = T vac |SEMICONDUCTOR TOSHIBA TECHNICAL DATA TLP181 SWICHING CHARACTERISTICS (Ta = 25°) CHARACTERISTIC [SYMBOL| TEST CONDITION __[ MIN. | TYP. [MAX, UNIT Tie Time e =[e[= Pall Time rs =|2T=] ,, Turaon Time ton —|[3/-]|“ Then Tie teat =pal— ien-an Time ‘ —[2[— “On 9k Fig.t) Storage Time a A ena, = [5 [=] 1 turnoff Time tone = [oT = RECOMMENDED OPERATING CONDITIONS CHARACTERISTIC [SYMBOL] MIN. | TYP. | MAX. | UNIT Supply Vollage veo | — | s | * |v Forward Current — [a6 [20 | ma Colletor Current To =a 10 ma [Operating Temperature a Fig SWITCHING TIME TEST CIRCUIT Tr ir Veo q cat aay y Va : cE 0.50 ‘on torr TFBSSEMICONDUCTOR TOSHIBA TECHNICAL DATA TLP181 ven) Ip- ANDIENT TEMPERATURE. Ts. 60) yp ~ DR avp/ata - tp "SSmMaAeE A a aN PULSE FORVARD CURRENT trp int) ANGIENT TEMPERATURE. Ts. 60) FORWARD VOLTAGE Vp.) ep - Vee. PULSE WIDTHS 98 FRrQcener 1 ee PULSE FORWARD VOLTAGE. Vp) [1995-18SEMICONDUCTOR TOSHIBA TECHNICAL DATA TLP181 ten ‘COLLECTOR CURIENT tc eat) (COULTON CURIENT 1p tnd! ia reo, Ig- Ir FORWARD CURRENT Ip in) CCOULECTOR CURIENT 1p (mA Fences Io - Vor COULECTOR-ENITTER VOLTAGE Vox Iczo ~ Te AMBIENT TENPARATURE TH CO)SEMICONDUCTOR TOSHIBA TECHNICAL DATA TLP181 ven) Vee aut) ~ Te AMBIENT TEMPERATURE. 14.60) SWITCHING TIME ~ Ri. cann Me Ge Loan Rasistasce maf) swnciiNe TOE = a AMBIENT TEMPERATURE. Ta. 60) SWITCHING TIME ~ AMBIENT TEMPERATURE. Ta CO) Tire