PNP SILICON PLANAR MEDIUM POWER

ZTX558 HIGH VOLTAGE TRANSISTOR ZTX558

ISSUE 1 – APRIL 94
FEATURES
TYPICAL CHARACTERISTICS
* 400 Volt VCEO
* 200mA continuous current
IC/IB=10 -55°C
IC/IB=10 * Ptot= 1 Watt
1.6 +25°C
IC/IB=20 1.6 +100°C
IC/IB=50 +175°C
1.4 1.4
VCE(sat) - (Volts)

VCE(sat) - (Volts)
1.2 1.2 C
B
1.0
E
1.0
0.8 0.8 E-Line
0.6 0.6 ABSOLUTE MAXIMUM RATINGS. TO92 Compatible
0.4 0.4
PARAMETER SYMBOL VALUE UNIT
0.2 0.2
0 0
Collector-Base Voltage VCBO -400 V
0.001 0.01 0.1 1 10 20 0.001 0.01 0.1 1 10 20
Collector-Emitter Voltage VCEO -400 V
IC - Collector Current (Amps) IC - Collector Current (Amps)
Emitter-Base Voltage VEBO -5 V
VCE(sat) v IC VCE(sat) v IC
Continuous Collector Current IC -200 mA
Power Dissipation Ptot 1 W
Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C
+100°C -55°C
VCE=10V +25°C IC/IB=10
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
1.6 +25°C 1.6 +100°C
hFE - Normalised Gain

-55°C 300 +175°C

1.4 1.4
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
hFE - Typical Gain

VBE(sat) - (Volts)

1.2 1.2
1.0 200 1.0 Collector-Base V(BR)CBO -400 V IC=-100µA
0.8 0.8 Breakdown Voltage
0.6 0.6 Collector-Emitter VBR(CEO) -400 V IC=-10mA*
100
0.4 0.4 Breakdown Voltage
0.2 0.2 Emitter-Base Breakdown V(BR)EBO -5 V IE=-100µA
0 0 Voltage
0.001 0.01 0.1 1 10 20 0.001 0.01 0.1 1 10 20
Collector Cut-Off Current ICBO -100 nA VCB=-320V
IC - Collector Current (Amps) IC - Collector Current (Amps)
Collector Cut-Off Current ICES -100 nA VCE=-320V
hFE v IC VBE(sat) v IC
Emitter Cut-Off Current IEBO -100 nA VEB=-4V
1.0
Single Pulse Test at Tamb=25°C Collector-Emitter VCE(sat) -0.2 V IC=-20mA, IB=-2mA
Saturation Voltage -0.5 V IC=-50mA, IB=-6mA
IC - Collector Current (Amps)

-55°C
VCE=10V
1.6
+25°C
+100°C
Base-Emitter VBE(sat) -0.9 V IC=-50mA, IB=-5mA
1.4
+175°C Saturation Voltage
0.1 Base-Emitter VBE(on) -0.9 V IC=-50mA, VCE=-10V
VBE - (Volts)

1.2
1.0 Turn On Voltage
Static Forward Current hFE 100 IC=-1mA, VCE=-10V
D.C.
0.8 1s

0.6
100ms
10ms Transfer Ratio 100 300 IC=-50mA, VCE=-10V
0.4
0.01 1.0ms
0.1ms
15 IC=-100mA, VCE=-10V*
0.2 Transition fT 50 MHz IC=-10mA, VCE=-20V
0
Frequency f=20MHz
0.001 0.01 0.1 1 10 20 0.001 Collector-Base Cobo 5 pF VCB=-20V, f=1MHz
1 10 100 1000
IC - Collector Current (Amps) VCE - Collector Voltage (Volts)
Breakdown Voltage
Switching times ton 95 ns IC=-50mA, VC=-100V
VBE(on) v IC Safe Operating Area toff 1600 ns IB1=5mA, IB2=-10mA
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
3-203 3-202
 PNP SILICON PLANAR MEDIUM POWER
ZTX558 HIGH VOLTAGE TRANSISTOR ZTX558
ISSUE 1 – APRIL 94
FEATURES
TYPICAL CHARACTERISTICS
* 400 Volt VCEO
* 200mA continuous current
IC/IB=10 -55°C
IC/IB=10 * Ptot= 1 Watt
1.6 +25°C
IC/IB=20 1.6 +100°C
IC/IB=50 +175°C
1.4 1.4
VCE(sat) - (Volts)

VCE(sat) - (Volts)
1.2 1.2 C
B
1.0
E
1.0
0.8 0.8 E-Line
0.6 0.6 ABSOLUTE MAXIMUM RATINGS. TO92 Compatible
0.4 0.4
PARAMETER SYMBOL VALUE UNIT
0.2 0.2
0 0
Collector-Base Voltage VCBO -400 V
0.001 0.01 0.1 1 10 20 0.001 0.01 0.1 1 10 20
Collector-Emitter Voltage VCEO -400 V
IC - Collector Current (Amps) IC - Collector Current (Amps)
Emitter-Base Voltage VEBO -5 V
VCE(sat) v IC VCE(sat) v IC
Continuous Collector Current IC -200 mA
Power Dissipation Ptot 1 W
Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C
+100°C -55°C
VCE=10V +25°C IC/IB=10
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
1.6 +25°C 1.6 +100°C
hFE - Normalised Gain

-55°C 300 +175°C

1.4 1.4
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
hFE - Typical Gain

VBE(sat) - (Volts)

1.2 1.2
1.0 200 1.0 Collector-Base V(BR)CBO -400 V IC=-100µA
0.8 0.8 Breakdown Voltage
0.6 0.6 Collector-Emitter VBR(CEO) -400 V IC=-10mA*
100
0.4 0.4 Breakdown Voltage
0.2 0.2 Emitter-Base Breakdown V(BR)EBO -5 V IE=-100µA
0 0 Voltage
0.001 0.01 0.1 1 10 20 0.001 0.01 0.1 1 10 20
Collector Cut-Off Current ICBO -100 nA VCB=-320V
IC - Collector Current (Amps) IC - Collector Current (Amps)
Collector Cut-Off Current ICES -100 nA VCE=-320V
hFE v IC VBE(sat) v IC
Emitter Cut-Off Current IEBO -100 nA VEB=-4V
1.0
Single Pulse Test at Tamb=25°C Collector-Emitter VCE(sat) -0.2 V IC=-20mA, IB=-2mA
Saturation Voltage -0.5 V IC=-50mA, IB=-6mA
IC - Collector Current (Amps)

-55°C
VCE=10V
1.6
+25°C
+100°C
Base-Emitter VBE(sat) -0.9 V IC=-50mA, IB=-5mA
1.4
+175°C Saturation Voltage
0.1 Base-Emitter VBE(on) -0.9 V IC=-50mA, VCE=-10V
VBE - (Volts)

1.2
1.0 Turn On Voltage
Static Forward Current hFE 100 IC=-1mA, VCE=-10V
D.C.
0.8 1s

0.6
100ms
10ms Transfer Ratio 100 300 IC=-50mA, VCE=-10V
0.4
0.01 1.0ms
0.1ms
15 IC=-100mA, VCE=-10V*
0.2 Transition fT 50 MHz IC=-10mA, VCE=-20V
0
Frequency f=20MHz
0.001 0.01 0.1 1 10 20 0.001 Collector-Base Cobo 5 pF VCB=-20V, f=1MHz
1 10 100 1000
IC - Collector Current (Amps) VCE - Collector Voltage (Volts)
Breakdown Voltage
Switching times ton 95 ns IC=-50mA, VC=-100V
VBE(on) v IC Safe Operating Area toff 1600 ns IB1=5mA, IB2=-10mA
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
3-203 3-202