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SEMICONDUCTOR TECHNICAL DATA by BF421/D

   

PNP Silicon

COLLECTOR
2

3
BASE

1
EMITTER 1
2
MAXIMUM RATINGS 3

Rating Symbol BF421 BF423 Unit

CASE 29–04, STYLE 14
Collector – Emitter Voltage VCEO –300 –250 Vdc TO–92 (TO–226AA)

Collector – Base Voltage VCBO –300 –250 Vdc

Emitter – Base Voltage VEBO –5.0 Vdc
Collector Current — Continuous IC –500 mAdc
Total Device Dissipation PD 625 mW
@ TA = 25°C 5.0 mW/°C
Derate above 25°C
Total Device Dissipation PD 1.5 Watts
@ TC = 25°C 12 mW/°C
Derate above 25°C
Operating and Storage Junction TJ, Tstg – 55 to +150 °C
Temperature Range

THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient RqJA 200 °C/W
Thermal Resistance, Junction to Case RqJC 83.3 °C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (1) V(BR)CEO Vdc
(IC = –1.0 mAdc, IB = 0) BF421 –300 —
BF423 –250 —
Collector – Base Breakdown Voltage V(BR)CBO Vdc
(IC = –100 mAdc, IE = 0) BF421 –300 —
BF423 –250 —
Emitter – Base Breakdown Voltage V(BR)EBO Vdc
(IE = –100 mAdc, IC = 0) BF421 –5.0 —
BF423 –5.0 —
Collector Cutoff Current ICBO mAdc
(VCB = –200 Vdc, IE = 0) BF421 — –0.01
BF423 — —
Emitter Cutoff Current IEBO nAdc
(VEB = –5.0 Vdc, IC = 0) BF421 — –100
BF423 — —

1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.

Motorola Small–Signal Transistors, FETs and Diodes Device Data 1

 Motorola, Inc. 1996
 
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain hFE —
(IC = –25 mA, VCE = –20 Vdc) BF421 50 —
BF423 50 —
Collector – Emitter Saturation Voltage VCE(sat) — –0.5 Vdc
(IC = –20 mAdc, IB = –2.0 mAdc)
Base – Emitter Saturation Voltage VBE(sat) — –2.0 Vdc
(IC = –20 mA, IB = –2.0 mA)

SMALL– SIGNAL CHARACTERISTICS

Current – Gain — Bandwidth Product fT 60 — MHz
(IC = –10 mAdc, VCE = –10 Vdc, f = 20 MHz)
Common Emitter Feedback Capacitance Cre — 2.8 pF
(VCB = –30 Vdc, IE = 0, f = 1.0 MHz)

2 Motorola Small–Signal Transistors, FETs and Diodes Device Data

  
150
TJ = +125°C
VCE = –10 Vdc
100
hFE, DC CURRENT GAIN
+25°C
70

50 –55°C

30

20

15
–1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –80 –100
IC, COLLECTOR CURRENT (mA)

Figure 1. DC Current Gain

f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)

100 100
80 TJ = 25°C
50 VCE = –20 Vdc
Cib 60
C, CAPACITANCE (pF)

20
40
10 30

5.0
20

2.0
Ccb
1.0 0
–0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100–200 –500 –1000 –1.0 –2.0 –5.0 –10 –20 –50 –100
VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)

Figure 2. Capacitances Figure 3. Current–Gain — Bandwidth Product

–1.0 –500
100 µs
1.0 ms
IC, COLLECTOR CURRENT (mA)

–0.8 –200 1.0 s

VBE @ VCE = –10 V
V, VOLTAGE (VOLTS)

–100
–0.6
BF423
–50
1.5 WATT THERMAL
–0.4 LIMITATION @ TC = 25°C BF421
625 mW THERMAL
–20 LIMITATION @ TA = 25°C
–0.2
VCE(sat) @ IC/IB = 10 mA –10 BONDING WIRE LIMITATION
SECOND BREAKDOWN
LIMITATION TJ = 150°C
0 –5.0
–1.0 –2.0 –5.0 –10 –20 –50 –100 –3.0 –5.0 –10 –20 –30 –50 –100 –200 –300
IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

Figure 4. “On” Voltages Figure 5. Active Region — Safe Operating Area

Motorola Small–Signal Transistors, FETs and Diodes Device Data 3

 
PACKAGE DIMENSIONS

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
A B
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
R 4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
P MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
L
SEATING F
PLANE K INCHES MILLIMETERS
DIM MIN MAX MIN MAX
A 0.175 0.205 4.45 5.20
D B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
J D 0.016 0.022 0.41 0.55
X X F 0.016 0.019 0.41 0.48
G G 0.045 0.055 1.15 1.39
H H 0.095 0.105 2.42 2.66
SECTION X–X J 0.015 0.020 0.39 0.50
V C K 0.500 ––– 12.70 –––
L 0.250 ––– 6.35 –––
N 0.080 0.105 2.04 2.66
1 N P ––– 0.100 ––– 2.54
R 0.115 ––– 2.93 –––
N V 0.135 ––– 3.43 –––

STYLE 14:
PIN 1. EMITTER
CASE 029–04 2. COLLECTOR
(TO–226AA) 3. BASE
ISSUE AD

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*BF421/D*
◊ Motorola Small–Signal Transistors, FETs and Diodes Device Data
BF421/D
4