Power Metal Oxide Silicon Field Effect Transistor (PMOSFET)Introduction of PPMOSFET ° Full form of PMOSFET is Power Metal Oxide Semiconductor Field Effect Transistor. * Power MOSFET is a type of MOSFET which is specially meant to handle high levels of power. eIt has high switching speed and can work much better in comparison with other normal MOSFETs in the case of low voltage levels.* Power MOSFET has high switching frequency about 100 kHz., * Power BJT is current control device where as Power MOSFET is voltage control device. *Power MOSFET consist of a parallel connection of thousand of basics MOSFET cell On a single silicon chip. * Power MOSFETs which are most widely used are n- channel Enhancement-mode or p-channel Enhancement-mode or n-channel Depletion-mode.Features of PMOSFET *It is a voltage controlled device. * Low input current. *High switching speed. *They do not have problem of secondary breakdown. *High input impedance. * Active device.Symbol of PMOSFET Drain(D) Drain(D) ‘Substrate Substrate Y Gate(G) Gate(G) i Source(S) Source(S) N-Channel P-ChannelStructure and working of PMOSFET © Source Silicon dioxide =—_ {iy KOM AI a=] Sz) Load I p Bory Region nR Drift Region rt substrate ‘Terminal layer Oy aAATRKUN AARON ATRALT ANNE UNALTERED AEA Current path N\ dorain Metal layerV-I Characteristics of PMOSFET Vps = Output voltage Ves =Input voltage 5. 1, = Output Current rt (a) (6) Figure 3 Power MOSFET (a) Transfer Characteristics (b) Output CharacteristicsIt is a Bipolar Device Current control Device Output is controlled by controlling base current Losses are low, So used in high power applications BJTs have high voltage and current ratings. Switching frequency is lower than MOSFET. It is majority carrier device Voltage control Device. Output is controlled by controlling gate voltage Losses are higher tha BJTs Used in low power applications They have less voltage and current ratings Switching frequency is high.MOSFET - Ratings aoa Bah Current Jos< 300A. Dereet Cog TSH e enn Meseras Frequency f>100 KHz for some low power. Bret TET Seacoast ~To tum on: Vos = +15V eet Re CROs re nee erieno nosMOSFET COOLING SOLUTIONS: - Bottom-side cooling enables MOSFET heat transfer through the pc board to ahheatsink. This decreases MOSFET junction temperatures while reducing the required area and thermal stress on the board MAJOR CAUSES OF POWER LOSS Power loss in a MOSFET comes from two sources. Every MOSFET has a resistive element, so it dissipates power as current is conducted through the device. The resistive parameter is described as on-resistance, or Rosiow, These conduction losses are inversely proportional to the size of the MOSFET; the larger the switching transistor, the lower its Rosom and, therefore, its conduction loss! The other source of power loss is through switching losses. As the MOSFET switches on and off, its intrinsic parasitic capacitance stores and then dissipates energy during each switching transition, The losses are proportional to the switching frequency and the values of the parasitic capacitances. As the physical size of the MOSFET Increases, its capacitance also increases; so, increasing MOSFET size also increases switching loss.