Q3-For a SCR, gate cathode characteristic is given by Vg=l +10l- Gate source voltage is a rectangular pulse of 15 V with 20 micro sec duration: 20 micro sec W) and a peak gate driver For an average gate power dissipation of | Connected in series with the power of S W, compute the resistance to SCR gate- Also find the triggering frequency and the duty cycle of the Fle < |ovseser —? Peck poh. (It loLg) tae 5 4 O oi 0-654 A = BUT =@ Be Tam = Ty ym zy tz P kHz ge ph = 00 Q& The trigger circuit of a thyristor has a source voltage of 15 V and the load line has a slope of -120 V. re The minimum gate current to turn on the SCR is 25 mA- Compute the source resistance required in the pulse: Solr gate circuit- Also compute the trigger voltage and trigger current for an average gate power dissipation of O-4 W: Sok R= 20 load bine: V4 Le = O4 +O tT an 38 8 Shah 6 44n4Bipolar Junction Transistor > A BIT is a three-layer, two junction n-p-n or p-n-p semiconductor device > The term bipolar denotes that the current flow is due to the movement of both holes and electrons > A BIT has three terminals as Collector, Emitter and Base Collector © Collector fe Ie Emitter e Emitter wen Type > A transistor with common emitter is more common for switching operation: Input-Output Characteristic © Graph b/w base current (Iq) and base emitter voltage (se) © As the base-emitter junction of a transistor is like a diode, Jp versus VBE graph resembles a diode curve: ae tf © Graph b/w collector current = (I)_—sand collector-emitter voltage (Vez) eckage ofp ch:° For Ip =0, as VCE increases a small leakage current flow- © As Ip increases, I; also rises- © The initial part of curve 2, characterized by low Vin is_~— called ~— the saturation region: © In this region, the transistor acts like a switch: © The flat part of curve 2, indicated by increasing VCE and almost constant Ie, is the active region: © In this region, transistor acts like an_amplifier- © Almost vertically rising curve is the breakdown region which must be avoided at all costs * For load resistor Rp the collector current fp is given by Ie (Vee-Vee)/Re © When transistor is on, Veg=O and Ie = Vec/Re: © When the transistor is off. or in the cut-off region, Vcc appears across collector-emitter terminals and there is no collector current: Forward current gai , is defined as = Vee > 0 © As IC < IE value of a varies from 0-95 to 0-99- —_—_a—eane © In a transistor, base current is effectively the input current and collector current is the output current: © The ratio of collector (output) current IC to base (input) current IB, @=-1/tg > is known as the current gain unrent gain© Is is much smaller, 73 is much more than unity; its value varies from 50 to 300: © Using KCL Je le +H © Dividing both sides by IC we get IN Ie =I Ie He Me Transistor Switch: © Transistor operation as a switch i-e- either in the saturation region or in the cut-off region: © As an ideal switch, = Closed Switch Veg =O [Operates a(n the saturated state] * Open Switch Ie = O [Operates at B in the cut-off state] © In practice, the large base current will cause the transistor to work in the saturation region at point A’ with small saturation voltage Vees_ © Vces represents on-state voltage drop, which is about 1 V- reduced to zero, the transistor © When the control, or base, signal is turned off [operation shifts to in the cut-off region] © @ small leakage current Igo flows in the collector circuit when the transistor is off KVL for the circuit consisting of Vs, Rs and emitter gives Ve - Rele = - Vee =O Ie = (Ve-Vec)/Re Vee = Veg + beRe = Vec- (BRe) * (Vs - Vee)/Re Vee = Veg + Vee les * (Ver ~ Vees)/Re tes = leofB * es is the base current that produces saturation © If base current is less than Igs, the transistor operates in the active region i-e- b/w saturation and cut-off region:© If base current is more than Ips, Vees is almost zero, Iec= Vec/Re Hard dive of tpansister Tg With base Current more than Ips © Vees becomes low and on-state losses becomes low- + Overdrive factor (ODF) is the ratio of Iy and Ips + Forced current gain (Be) is the ratio of Ies and Ie[(B)< BJ © Total Power Loss is given as = Transistor Switching Performance: * A transistor cannot be turned on instantly because of the presence of internal capacitances: © When base-emitter voltage Vsc is applied, the base current rises to les; the collector current, remains zero or equal to collector-emitter leakage current lero" © In delay time (t,), the collector current begins to rise: © In ty base-emitter Yee capacitance is charged to Vpes = 0-7 Vv: © During rise time (); the collector current rises to steady state value les ©, depends upon the input capacitances: © During tr, collector emitter voltage falls . 4 from Vee to Vees: Switching waveform of mp-n transistor