Shahjalal University of Science and Technology oe ‘rtment of Electrical and Electronic Engineering 1"'SemesterFinal Examination 2014 Depa 4 year Time:3 hours Total Marks:100 Part A ‘Answer any two of the following questions an Extrinsic semiconductor. Illustrate Explain the behavior of charge cartier in it af \d model your answer with energy ban : oy tb Eaplain carrier distribution in any semiconductor with Fermi Dirac distribution 9 ‘and hence define Fermi level. Tostrate the following with schematic diagram for intrinsic, p-type and n-type 12 loa semiconductor: i. Band diagram ii, Density of state iii, Fermi distribution funetion iv. Carrier concentration 2 a Define i) Fermi energy ji) Fermi function ii) Compensated semiconductor iv) Direct band-gap semiconductor. vy) Density of state suring the lifetime of carrier 7 b Propose and explain one of methods for m Forasilicon sample maintained at T=300K, The Fermi level is located 0.259eV 8 above the intrinsic Fermi level. What are the hole and electron concentrations? ‘Also specify what type of doping material has been used? 3 a Withnecessary diagram explain how a schottky barrier is formed between metal 8 and semiconductor. b Explain in detail the formation of a rectifying contact and effect of biasing on it Illustration of your answer with necessary band diagram is a must. ¢ What do you mean by heterostrueture? Explain a heterojunction with necessary 5 diagram. Please turn over4 b Answer any two of the following questions In how many ways exeess carrier in semiconductor can be recombined? Explain 7 ‘Trapping’ in detail with necessary diagram. Briefly explain drift and diffusion of charge carrier in a semiconductor and hence 10 derive the Einstein relation from it. 8 With necessary diagram explain diffusion and recombination of charge carrier in semiconductor and hence derive the Continuity equation from it, With necessary diagram explain fabrication process of p-n junction diode, Explain phenomenon of Avalanche breakdown for a p-n junction diode, IHlustrate 10 your answer with necessary diagram. What are the sources of capacitance in a p-n junction diode? Explain the junction 7 capacitance with necessary diagram, Write down Ebers-Moll equations. What is the significance of these equations? 7 Draw the high frequency model of BIT. 6 Depict the carrier activity in a pnp BJT under active mode biasing, Also explain in brief. What are the performance parameters of BJT? Find the common emitter d.c gain? 6 Find the resistance of a 1em*pure silicon erystal(Assumen, = 1.0 x 10! cm-3, 6 He = 1350 em?V~*s~4and ji, = 450cm?V~!s-}),Shahjalal University of Science & Technology Department of Eletrieal & Flectronic Engineering 4 year 1" Semester Final Examination — June 2014 Course No: EEE 423 Course Title: Computer Interfacing and Industrial Automation Credits: 3.0 Full Marks : 100. Time : 3 Hours [Answer any four questions taking two from each group) Group A QI (2). Givethe block diagram of a production system. Also explain each component. 6 (6) What do you know about a sequencing system? What do you know about a logic control 5+5 stem? (© Whatis automation in production system? How many types of automation are possible 9 in automated manufacturing system? Explain. 2 4a) Drawa ladder logic diagram, 6 6 4b) With suitable diagram describe a feedback control system. 42) What do you mean by the levels of automation in manufacturing system? 6 (d) What are the components of PLC? Discuss the PLC operating cy Q5 (@)_ A 12-bitsuccessive approximation ADC outputs the binary code 1111 1111 1111 for an analog input of 10,0V. Find the resolution of the ADC. (b) Sketch the interfacing circuit diagram between 8255 and 8086. (©) Discuss how a magnetic storage system works. (4) With example write on different data encoding formats of (©) Differentiate between SSD and FLASH drive. 5 4 jagnetic medium, Group B Q4 @) With example illustrate synchronous and asynchronous communication, (b) Give the interfacing circuit between 8254 and 8086 (c) Write 8086 APL to generate 1kHz square wave with a clock of 2MHz, (use 8254) (4) Draw the internal block diagram of 8254, Q5 Aa) What do you kriow bifilar stepper motor? (b) What are the serial and parallel ports of a pe? (©) Discuss about basic DMA operation (@) Why DMA controllers used to manage data transfer in pe? 6 {a) Explain simple vo method with example. Ab) Give the internal block diagram of 82554 Ac) Discuss the different modes of 82554 (d) Show the circuit for interfacing two 8255A devices to 16-bit bus,7®), Draw the open cyele for gas turbine power plant. Write the purpose of combustion ‘chamber in it. _PIM ny pulverization is done in a coal fired power plan. Give Description of any basic type of pulvarizers. A) Describe the process of overfeed fuel bed combustion with schematics. .) A bed of particles of mean size 427 j1m is fluidized by air under ambient condition, where air density is 1.21 ke/m? and the viscosity is 1.82 10° kg/m-s. The density of the loosely packed bed is 1620 kg/m?.If the density of solids is 2780 kg/m’, find i) the voidage of the bed 5 ii) the minimum fluidization velocity. Assume C1=27.2 C>=0.0408. a) Define circulation ratio and TDF. = b) What is ESP? Write down its applications. d ©) Derive the relationship between thermal efficiency and pressure ratio of a gas turbine power plant for Brayton eyele. 6 d) Write brief description of Sodium Zeolite softening of feedwater. €) Draw the schematics of steam generating part of a coal fire plant showing all basic component and direction of steam flow. 4 £) What is cogeneration? How does cogeneration affect plant efficiency? we A») What is surge tank? Draw the whole arrangement ofa hydro electric plant showing the position of surge tank. 2) Write brief description of Boiling water reactor in nuclear power plant with figure. 7©) Mite the main advantages of hydro electric power plant over other type of plants? _) Briefly discuss the fabrication of nuclear fuel. 77) Anatomie power plant can deliver 300 MW. If due to fission of each of sx" the energy released is 200 MeV, calculate the mass of uranium fissioned per hour. 4 ) What is back pressure turbine? 2 i own ueGroup B Qt a) Whats draughe? Write the classification of draught. Discuss the factors considered in seleting « prime mover for hydro electric power plant. ) Write short note on deareator, economizer and superheate. aaaee 4) Draw the overall structure of a gas turbine power plant. ) Water fora hydro-electric station is obtained fFom 4 reservior with a head of 100 m. Calculate the electrical energy generated per hour per ‘cubic meter of water if'the hydraulic efficiency is 0.86 and electrical efficiency is 0.92, 4 a) Asupply company offers the following alternate tariffs for supply to a factory : i) HLY. supply t Rs 70 per kVA per annum plus 3 paise per kWh. ii) L.V. supply at RS 65 per kVA per annum plus 4 pase per kWh, ‘The cost oftransformers and switehgears for H.V. supply is Rs $0 pec KWA and full transformation losses are 2%. The annual fixed charges onthe capital cost of H.V. plant are 1596: Ifthe factory runs for 6 hours a day, find the number of days above which the factory < should be run so that the H.V. supply is cheaper. _) What do you mean by Uranium enrichment? 4 ) Discuss the process of chain renetion. How itis controlled in nuclear reactor? d) Define penstock and spillway. ‘ A) A consumer has a maximum demand of 100 MW at 60% load factor. Ifthe tariff'is tk. 20 per KW of maximum demand plus 2 taka per kWh, find the overall cost per kWh. 4 _A) List te four components of nuslear reactor 4 cog. 2) Discuss any two catagories of forecasting techniques - ») A generating station has a maximum demand of 75 MW and a yearly load factor of 40% Generating costs inclusive of station capital costs are Rs. 60 per annum per kW demand pis 4 paise per kWh transmitted. The annual capital charges for transmission system are Rs 2000000 and for distribution system Rs 1500000; the respective diversity factors being 1.2 and 1.25, The efficiency of transmission system in 90% and that of the distribution system inclusive of substation losses is 85%. Find the yearly cost per KW demand and cost per kWh supplied : ‘ i) at the substation ii) at the consumer comprises. ) Explain dual pressure steam cycle in a combined cycle plant. What is its thermodynamic advantage? , 4) A single jet impulse turbine with capacity of 10 MW is to work under a head of 500 m. If the specific speed of the turbine is 10, find the speed of the turbine in rpm. 5Shahjalal University of Science and Technology Department of Electrical and Electronic Engineering 4" Year It Semester Final Examination 2014 Course Code: EEE-453 Pine) 3 hibit Course Title: Processing and Fabrication Technology Total Marks | 100 PartA Answer any two of the following questions: 5 i) True or False: GaAs has zincblende structure vTrue or False:GaN has hexagonal wurtzite structure iii) Which one has both spontaneous polarization and piezoelectric polarization at hetero-interface a)Si b)GaAs ¢) GaN jv) In Which of the following material electron has the highest mobility a)Si b)GaAs ¢) GaN: two advantages of CMOS compared to NMOS technology. .¢ the Miller indices for the plane and direction vector shown in 5 1a) y) Mention b) i) Determine figure bellow x ii) Sketch the plane and direction vector characterized by (011) and {011}, respectively. ©) _Deseribe the process of producing ultrapure Si from Silica with block diagram. Mention three step for obtaining the SGS from MGS with reaction formula, d) Briefly describe the CZ method with necessary diagram for single-crystal Si formation. Describe the CVD for epitaxial growth of Si with necessary diagram and reaction. b) Describe the CVD for epitaxial growth of GaAs with necessary diagram and 6 reaction. ae cee ey for electronics device fabrication. Describe the 5 process of thermal oxidation of Si wafer with furnace diagram and chemical reaction. d) Describe the phosphorus diffusion into Si wafer with necessary diagram and 8 formula for impurity concentration. = 3. a) _ Derive Fick’s second law of diffusion. b) Explain channeling for ion implantation process. What methods are used to asce) d) e) suppress channeling? : Draw schematics of arrangement and discuss the advantages of RF sputtering, What are the demerits of wet etching? . : Ty mass separation stage of an fon implanter the extraction potential is 20kV dion mass is 10 amu. {the field intensity is 0.13 Tesla, find the radius of curvature and velocity of ion ‘Answer any two of the following questions: 4 a) b) b) «) qd) esetibe the optical lithographic pattern transfer process on following material system with negative photoresist. ene j—Sioe Substrate doping for the following chip is, 10!S/em* The field doping and source/drain doping are 10'¥/em’ and 10"/em’, respectively. Gate oxide thickness is 10nm. Calculate the field oxide thickness so that the allowable voltage limit inthis chip is 10 times that of the device threshold voltage. (Pm ~0.3 V, Kiel}, Ksio2=3.9) Describe electron beam lithography with schematic of electron-beam machine. What is the purpose of back sputtering process? Draw binary eutectic phase diagram and describe Lever and Phase rule Describe two-sided process for p-n junction isolation, Describe n-well CMOS fabrication process with schematic of each step. Draw schematic cross section of embedded DRAM including DRAM cells and logic MOSFETs. ilicon-on-insulator technology for CMOS Briefly describe(with diagram) fabrication and mention its advantage compared to balk device. What is SCF (short channel effect) in MOSFET, how it can be reduced. i)Draw circuit layout ofn channel MOSFET, CMOS inverter. ii)Draw top view and cross section of Si based, two level metal spiral inductor. Also give the equivalent circuit and estimation equation for inductance. Describe BIT fabrication process with schematic diagram. ane nw ar a\Shahjalal University of Science & Technology Department of Electrical & Electronic Engineering 4" Year 1" Semester Final Examination ~ Jan-June 2014 Course No: EEE475 Couise Title: RF and Microwave Engineering Credits ; 3.0 Full Marks; 100 Time ; 3 Hours [Answer any four questions taking two from each group] Group-A QI. a) What are the functions of an antenna? 5 b) State expression of vertical radiation pattern of monopole antennas. Also sketch the patterns for length 8 Aig 3475 2A, c) What is the mechanism of radiation? 5 7 ) Find the effective area of a Hertzian dipole operating at 100 MHz. 2.) Draw radiation patterns of cenire fed horizontal dipoles of length i) Leap i). b=¥% ii) L=a ivy) L=2a _P) Define the following parameter (any four) i) Antenna impedance ii) Radiation resistance iii) Effective length of antenna iv) Radiation inten: v) Directive gain ©) What is the effect of earth on radiation resistance? - Find the null tomull beam width of end fire array wheni) the array length {= 102 and N = 20 ii) the array length 1 = 504 and N = 100 8a) Write down te salient features of Yagi-Uda antenna, 1 >) Design «three element Yagi-Uda antenna to operate at a frequency of 172 Miz. 6 ©) Find the directivity of a half wave dipole. 6 _P) Wat are the design parameters ofa hor antenna? What are the typical applications ofhom antenna? 6 Group-B 4. a) Draw field pattern for TE1o and TM, mode in a rectangular waveguide 6 P) Discuss about the operation of Hartley oscillator. ii /) What are the major differences between Hartley and Colpitts oscillator? 5 _A') What do you know about crystal oscillator? 5 _/2) Draw the crystal equivalent circuit. 2 Q5. a) Discuss about the operation of rectangular waveguide, 8 b) Discuss about the attenuation characteristics of the TE, mode in circular waveguide. 6 ©) Explain why TEM wave exist in coaxial cable but not in waveguide? 5 ADA rectangular waveguide has the following characteristics b=15¢em,a= 3.0m, = 1 and €, = 2.25, Calculate the Cut-off wavelength and frequency for the TE,o, TE29 and TM, , modes. 6 6. a) What do you know about rectangular cavities? 6 ) Discuss about reflection and standing waves in a transmission line ¢) Why do we use Smith chart? @) 4 500 transmission line is terminated in a load with Z, = (100 + j50)0. Find the voltage reflection Coefficient and voltage standing wave ratio(SWR), 6 ©) Why is magic-Tee referred as E-H Tee? 2