TTT: Econoline" Plastic-Molded Silicon SEPT“ Transistors DUAL TRANSISTOR DIFFERENTIAL AMPLIFIERS Each device consists of two isolated high-gain, low-noise, NPN or PNP transistors in a G-lead plastic package li “Vee Vata] Wideband te | ter/tw [Won-Veer Jae | ME | te case Vipceo ais. | Min /itas.Jrvotax) | (Waxy | Max. | i, Typeo.|eceaD [po.anrry| Volts’ ott | vor | rona[ wa | 10a” | wna | 8) _| iy eT 2 2] Toa | aP— WPNyNPRC| — eo [30] 5] a0] to] 10 z oa Toae_[ aR NON Ne] ey [staf og z 20 ae Toa [ aN Rene — es —[ 30s] taf to 0 = or TDa0 [at WANN] — eo os ogo To io pe Toa “P| RP PR | — 0 Tt = oar Toa ae PaPPNE | e305 0} 0 x eo Tosa | PIPeN [wo $ fiat foto [5 2 0a cs x oa Sn a i ne COMPLEMENTARY gach device consists of two isolated ~ one NPN and one PNP — high gin low noise PAIRS silicon planar transistors in a 6-lead plastic package. ™ |e cast Vancro | Veneto | Vargo | amin. | tn, | wax Ke Typena.] euean | povarmry | votte” | vote | vows | na | ani | oF FeaTuRes roan [ee | vewene [| 5 | 10 lesa. Toaal_[ BP -wevenr [of sia [9 ere fn f= Tak roe] an ween] a] ar ata 10 8 To-To| Bn] RPR/PRF] — wo 38 3H i 6p = Ta DUAL TRANSISTORS Each dual Transistor Pair consists of two isolated, high-gain, silicon planar transistors. T Mg = Oma, ly = mA Ig = SOMA, Vex = 20,4 = 0M ‘Type T0221 seectiallyenvlet to two 2N2Z19 transistors; Type 1-290 to wo 2NZ5 transistors PACKAGE PINNING DIAGRAMS (PNP/NPN Polarity shown) se = 150m Ty ~ 15m PACKAGE BP [CURRENT ANPLICATION FACTOR Max. ea | Min. | Min tin | ax. | ox. Min, cast Vanes |Vienceo | a @ | tree | hee | tee [Vcesan|Veusan ax. | ty Type No. |@-LEAD| POLARITY | Volts. | Volts | 30V) | tcm0.lmA| te=100A | te~180ma | Volts | Voits_|Coy_| MHz to102 | ap] -newwen] oo | | 0 | | ao | — Tom [ow | s am o2t[- en |-nenjnen | oo [ a P10 a [afore foe Toma [- Br | pReyPNP [a | 0 fof tm “Tost —[BN[-PRP/PRP_| a0 —[ 30 [of eof “ost [ap | nenjenr | — [= | aor oe ot [an —[ neuen | —a0 [9010 — a ozs ep _| NeNNR | co [ | | [ae O28 | eF —[ puPrenp | oo [af mr | it He = SOQ, Vee = Vf = TOME "Ven = SOV PACKAGE BN 3