Not for new development BFY 33, BFY 34 (2N 1613); BFY 46 (2N 1711) NPN-Transistors for universal RF application BFY 33, BFY 34 and BFY 46 are double-diffused planar NPN silicon RF-transistors in a case 5 C 3 DIN 41873 (TO-39). The collector is electrically connected to the case. The transistors are for universal application. BFY 34 corresponds to type 2 N 1613; BFY 46 corresponds to type 2 N 1711. cE B Type Order number a t +4 BFY 33 Q60206-Y 33 3 oS BFY 34 Q60206-Y 34 a + BFY 46 060206-Y 46 BSH Bye bates Weight approx. 1.6.9 Dimensions in mm Maximum ratings Collector-emitter voltage (g¢9=30 mA) Colléctor-emitter voltage (Rae<10 9) Collector-base voltage Emitter-base voltage Collector current Junction temperature Storage temperature Total power dissipation (Tere S48 °C) Thermal resistance Junction to ambient ait Rinsamp Junction to case Rinscase $220 K/wW 360 Kw 348¢ 5 € 5 2 g 3 3 2 g 3 § 8 2 BFY 34, BFY 46 Static characteristics (7,,,.=25 °C) [BFY 34 Collector-emitter breakdown voltage (Iceg=30MA) — Visnyceo >30 |v Collector-emitter breakdown voltage (Ucen=100 MA; RyeS10 Q) pricen a Collector-base breakdown voltage (I¢go=100 yA) ysneee >75 |v Emitter-base breakdown voltage (Iepc. 100 WA) Viomeso 7 ly Static characteristics (7,,.—25 °C) [BEY 46 For a collector voltage of Veg=10 V and the listed collector currents Ie: Ie Is fee Vocsar®) Veesat’) mA | mA Taig v 0.01 [0.167 (<0.5) 10-8 | 60 (>20) ~ = 4 1.25 (<2.9)-10-? | 80 (>35) - - 10°) | 0.154 (<2'9)2) 65 (>35) = = 10!) | 0.077 (<0.134) 130 (>75) - - 150") | 0.51015 100 to 300° ~ 150 | 15 10 0.95 (<1.3) 05 (<1.5)* 500') | 6.67 (<125) 75 (> 40)" ~ - Collector-base cutoff current (Vego=60 V) Collector-base cutoff current (Veao= 60 V) Emitter-base cutoff current (Veno=5 V) Teso Collector-emitter breakdown voltage (Uceo=30 mA) Vemceo (Ucen=100 mA [Impulse]; RyeS10 2) Veamcen Collector-base breakdown voltage (Ucgo= 100 HA) Vemcao Emitter-base breakdown voltage (epo= 100 HA) Vaneao 2) Measured with impulses: impulse length 200 us; duty cycle <0.01 2) For “55°C. 3) The “adi 0.65% 350 0.3 (<10)* 0.05 (<5)* >30 >50 >75 << << tor has been overdtiven to such an extent that the DC current gain has fallen to @ value hpe=10Not for new development Prot ot Total power dissipation Reva 7): Fg paramet 7 av oS 33, BFY 34, BFY 46 178 Fe99=f Tar) Veg 40V (BFYS3) Vga 80V (BFY34 48) — iyi are = fnitanie “1 0 0 0 — em cutoff current FY33, BY 34, BEY 46 180° BFY 33, BFY 34, BFY 46 Permissible pulse load K. Fenscase™* (0); v= parameter Ww BFY 33, BFY 34, BFY 46 0 ae 5 fiacese + be $ Pat 5 aoe age 10° 5 not woot De wt ot als Current-gain bandwidth product f,=f(Ic) Vee=parameter BFY33, BFY34, BFY46 Maz 180 > rTM, “CHT 1 | Vg 18 (8FV68 0 ° co 5 0 5 10mk =f 351