Advanced Power

Electronics Corp. AP4957GM-HF-3

Dual P-channel Enhancement-mode Power MOSFETs

Simple Drive Requirement BVDSS -30V

Low On-resistance R DS(ON) 24mΩ
Fast Switching Performance ID -7.7A
RoHS-compliant, halogen-free
D1 D2

G1 G2

Description
S1 S2
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design, D2
low on-resistance and cost-effectiveness. D2
D1
The AP4957GM-HF-3 is in the popular SO-8 surface-mount package D1

and is well-suited for use in low-voltage DC/DC conversion and

G2
general load-switching applications. S2
G1
SO-8 S1

Absolute Maximum Ratings

Symbol Parameter Rating Units

VDS Drain-Source Voltage -30 V
VGS Gate-Source Voltage ±20 V
3
ID at TA=25°C Continuous Drain Current -7.7 A
3
ID at TA=70°C Continuous Drain Current -6.1 A
1
IDM Pulsed Drain Current -30 A
PD at TA=25°C Total Power Dissipation 2 W
Linear Derating Factor 0.016 W/°C
TSTG Storage Temperature Range -55 to 150 °C
TJ Operating Junction Temperature Range -55 to 150 °C

Thermal Data
Symbol Parameter Value Unit
3
Rthj-a Maximum Thermal Resistance, Junction-ambient 62.5 °C/W

Ordering Information

AP4957GM-HF-3TR RoHS-compliant halogen-free SO-8, shipped on tape and reel, 3000pcs/reel

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 Advanced Power
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Electrical Characteristics at Tj = 25°C (unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Units

BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -30 - - V
∆ BV DSS/∆ Tj Breakdown Voltage Temperature Coefficient Reference to 25°
C, ID=-1mA - -0.02 - V/°C
RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V, ID=-7A - 20 24 mΩ
VGS=-4.5V, ID=-5A - 30 36 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V
gfs Forward Transconductance VDS=-10V, ID=-7A - 12 - S
o
IDSS Drain-Source Leakage Current (Tj=25 C) VDS=-30V, VGS=0V - - -1 uA
o
Drain-Source Leakage Current (Tj=70 C) VDS=-24V, VGS=0V - - -25 uA
IGSS Gate-Source Leakage VGS=±20V - - ±100 nA
2
Qg Total Gate Charge ID=-7A - 27 45 nC
Qgs Gate-Source Charge VDS=-24V - 5 - nC
Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 18 - nC
2
td(on) Turn-on Delay Time VDS=-15V - 14 - ns
tr Rise Time ID=-1A - 11 - ns
td(off) Turn-off Delay Time RG=3.3Ω, VGS=-10V - 38 - ns
tf Fall Time RD=15Ω - 25 - ns
Ciss Input Capacitance VGS=0V - 1670 2670 pF
Coss Output Capacitance VDS=-25V - 530 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 435 - pF
Rg Gate Resistance f=1.0MHz - 3 4.5 Ω

Source-Drain Diode

Symbol Parameter Test Conditions Min. Typ. Max. Units

2
VSD Forward On Voltage IS=-1.7A, VGS=0V - - -1.2 V
2
trr Reverse Recovery Time IS=-7A, VGS=0V, - 35 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 34 - nC
Notes:
1.Pulse width limited by maximum junction temperature.
2.Pulse width < 300us , duty cycle <2%.
3.Surface-mounted on 1 in2 copper pad of FR4 board ; 135 °C/W when mounted on minimum copper pad.

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.

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 Advanced Power
Electronics Corp. AP4957GM-HF-3
120 120

-10V o
o T A = 150 C
T A = 25 C
100 100 -10V

-ID , Drain Current (A)

-ID , Drain Current (A)

-7.0V
80 80
-7.0V

60 60

-5.0V
40
-4.5V 40
-5.0V
-4.5V
20 20
V G =-3.0V V G =-3.0V

0 0
0 1 2 3 4 5 6 7 8 0 1 2 3 4 5 6 7

-V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

48 1.6

ID=-5A
ID=-7A
T A =25°C 1.4
40
V G =-10V
Normalized R DS(ON)
RDS(ON) (mΩ)

1.2

32

1.0

24
0.8

16 0.6
3 5 7 9 11 -50 0 50 100 150

-V GS , Gate-to-Source Voltage (V) o

T j , Junction Temperature ( C)

Fig 3. On-Resistance vs. Gate Voltage Fig 4. Normalized On-Resistance

vs. Junction Temperature
7 2.0

1.5
5
Normalized -VGS(th) (V)

4
-IS(A)

T j =150 o C T j =25 o C 1.0

2
0.5

0 0.0
0 0.2 0.4 0.6 0.8 1 1.2 -50 0 50 100 150

o
-V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( C)

Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage vs.

Reverse Diode Junction Temperature

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Electronics Corp. AP4957GM-HF-3

12 10000
f=1.0MHz

ID= -7A
-VGS , Gate to Source Voltage (V)

10
V DS = - 24 V

C iss

C (pF)
6 1000

C oss
4

C rss

0 100
0 10 20 30 40 50 60 1 5 9 13 17 21 25 29

Q G , Total Gate Charge (nC) -V DS , Drain-to-Source Voltage (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

100 1

Duty factor=0.5
Normalized Thermal Response (Rthja)

0.2
10

0.1
0.1
1ms 0.05
-ID (A)

1
10ms 0.02

0.01
PDM
100ms 0.01 t
Single Pulse T
0.1
1s
T A =25 o C Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Single Pulse Rthja=135oC/W
DC
0.01 0.001
0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 1000

-V DS , Drain-to-Source Voltage (V) t , Pulse Width (s)

Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

40

V DS =-5V VG
o o
T j =25 C T j =150 C
-ID , Drain Current (A)

30

QG
-4.5V
20
QGS QGD

10

Charge Q
0
0 2 4 6 8

-V GS , Gate-to-Source Voltage (V)

Fig 11. Transfer Characteristics Fig 12. Gate Charge Circuit

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Package Dimensions: SO-8

D
Millimeters
SYMBOLS MIN NOM MAX
A 1.35 1.55 1.75
8 7 6 5 A1 0.10 0.18 0.25
B 0.33 0.41 0.51
E1 E C 0.19 0.22 0.25
D 4.80 4.90 5.00
1 E1 3.80 3.90 4.00
2 3 4
E 5.80 6.15 6.50
L 0.38 0.71 1.27

e Θ 0 4.00 8.00
e 1.27 TYP
B

A1
DETAIL A L Θ

1. All dimensions are in millimeters.

2. Dimensions do not include mold protrusions.
c

DETAIL A

Marking Information: SO-8

Product: AP4957
Package:
4957GM GM = RoHS-compliant halogen-free SO-8

YWWSSS Date/lot code (YWWSSS)

Y: Last digit of the year
WW: Work week
SSS: Lot code sequence

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