SEMIKRON SKiiP 83 AHB 15 T1 MiniskiiP 8 Absolute Maximum Ratings SEMIKRON integrated ‘symbol |Conditions * Values Units] intelligent Power Bridge Rectifer SKiiP 83 AHB 15 T1 ‘Ven 1500 v | half controlled 1 naw (eet Oe ope 8) 4 | S-phase bridge rectifier + lrawhrsw {ty = 10 ms: sin. 180°C, 7)=25 5 i Ft |ip= 10 ms; sin. 180°C, T;= 28°C 5000 ats | _IGBT braking chopper IGBT Chopper Preliminary Data ees 1200 v \Vces +20 Vv Case MBa le Taek = 25/ 80°C 95/65 A lent Ip < 1 MS; Treating = 25/80 °C 190/130 A [Freewheeling Diode *! ‘Ver 1200 v le | Treatwink = 25 / 80 °C 50/30 A lew tp < 1 ms; Theatsink = 25/80 °C 100/60 A i Diode & IGBT 5 .. + 160 a 7 Thyristor 5 n+ 125 *c ! Toy 55 +125 *c Vins |AC, + min, 2500 v ‘Characteristics wd — ‘Symbol |Conditions ') min. typ. max. | Units a [Diode - Rectifier k NH Ve |= 100A T= 125°C - ous + 1 b Ob Vio 25°C - 08 - |v tr 25 °C - 35 - mQ Fy |perdiode -— o7__| kw] Features 'Thyristor - Rectifier + High level power integration vr k=120A T)=25°C - - 18 v + Two-screws-mounting to the vero) |= 125°C - aw fy customer heatsink, compact r IT, = 125°C - - 5 m2 design Rinn [per thyristor - - 039 | KW | — « Low thermal impedance due to leo |= 125°C 5 ~ | ma durable ceramic insulation Mer | ras = = 8) | M+ Pressure contact technology er J 250 mA with simple connection to DCB ht 7 > m through pressure contact (no Nivton so = | YAS | soldering) an with increased dilaton - - 125 | Ais power cycling capability apr oe + High power density, low losses chopper + Integrated temperature sensor Vee |le=75A T= 25 (125) °C = 2501) 3087) | v lon |] Voo= 600 V; Vee == 15V - 9570 | ns te le=75A {T)= 125°C - 70 140 ns. ain Roo = Rost =18 0 = 480 600 | ns lv inductive Toad = 79100 fo |e antes ot t+ Eo - R oo neers = 25°C, unless otherwise Ge. |Voe=25V: Vee =0V. 1 MHz = 80 = | af | a Gat Contre Axial Lifetime iy [per IGBT = __ = __088_| KW | Technology (soft and fast recovery) 5} Limited by terminals to 100 A © by SEMIKRON 2101s 1SKiiP 83 AHB 15 (Chopper) T1 MiniSkiiP 8 SEMIKRON integrated intelligent Power SKiiP 83 AHB 1571 half controlled 3-phase bridge rectifier + IGBT braking chopper Projiminary Data Case Mga of elec co SKiiP 83 AHB 15 T1 (Characteristics ‘symbol Conditions * min. typ. max. _|Units Diode *- Freewheeling Ve=Veo |le=35A 7) =25(125)°C - 20018 2823) | v Vio 25 °C = 10 12 |v ir 25 °C = 2% a7 | ma Iw |) le=25A Ve=—600V = 3 Aw a, det =-500 Aus rr ne Ec J Vee =0V, T)= 125 °6 - 15 - md ey [per diode = to | ww Fremperature Sensor rs __|T=25/100°C 1000/1670 a Mechanical Data Mi [case toheatsink, $1 Units 28 = 38 | Nm case Mea 3 TOM surace of cavach PCB 021015 ‘by SEMIKRON