2SC2073 ®

2SC2073 Pb
Pb Free Plating Product
NPN Silicon Epitaxial Power Transistor

FEATURES 9.90±0.20 0.
20 4.50±0.20
60
±

z Complements the 2SA940. φ 3. 1.30±0.20

z Wide Safe Operationg Area.

6.50±0.20
z Fast Switching Speed.

15.70±0.20

2.80±0.20
z Wide ASO.

9.19±0.20
COLLECTOR
2.40±0.20
2 1.27±0.20
13.08±0.20

3.02±0.20
1.52±0.20
BASE
1

0.80±0.20
3 3 2.54typ
EMITTER 1. BASE 12 2.54typ
2. COLLECTOR 0.50±0.20
3. EMITTER TO-220C Package Dimension Dimensions in Millimeters

MAXIMUM RATING operating temperature range applies unless otherwise specified

Symbol Parameter Value Unit

VCBO Collector-Base Voltage 150 V

VCEO Collector-Emitter Voltage 150 V

VEBO Emitter-Base Voltage 5 V

IC Collector Current 1.5 A

IB Base Crrent 0.5 A

Collector Dissipation Ta=25℃ 1.5

PC W
Tc=25℃ 25

Tj,Tstg Junction and Storage Temperature -55 to +150 ℃

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© 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/

 2SC2073 ®

ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified.

Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base Breakdown Voltage V (BR) CBO IC=100μA,IE=0 150 V

Collector-emitter Breakdown Voltage V (BR) CEO IC=1mA,IB=0 150 V

Emitter-base Breakdown Voltage V (BR) EBO IE=100μA,IC=0 5 V

Collector Cut-off Current ICBO VCB=120V,IE=0 10 μA

Emitter Cut-off Current IEBO VEB=5V,IC=0 10 μA

DC Current Gain hFE VCE=10V,IC=0.5A 40 75 140

Collector-emitter Saturation Voltage VCE(sat) IC=0.5A, IB=50mA 1.5 V

Base-emitter on Voltage VBE(on) VCE=10V ,IC=0.5A 0.65 0.85 V

Transition Frequency fT VCE=10V, IC=0.5A 4 MHz

VCB=10V,IE=0,
Collector Output Capacitance Cob 35 pF
f=1MHz

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

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© 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/

 2SC2073 ®

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© 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/