PHILIPS INTERNATIONAL Philips Semiconductor So Fig.1 Simplified outine and symbol. Datasheet 2N2646 piste _|Prelmnayspectester! Silicon unijunction transistor ate ofisve [December 860 QUICK REFERENCE DATA SYMBOL PARAMETER ‘CONDITIONS MIN. MAX, UNIT —Vewo emitter-base 2 voltage — j= 30 v Tou emitter current peak valve 7 7 2 A Pas ‘total power dissipation = = 300 mW. Ty Junction temperature 7 7 15 [°C Pee ‘static inter-base resistance y= 3V — 7 = kQ leno Vente ‘emitter-base 1 saluration voltage Vee = 10V = 35 = v tg=50 mA Teen emitter vally point current a maa = mA ks emitter peak point current 7 fl 5 HA PINNING - TO-18 PIN CONFIGURATION Base 2 connected to case. PIN DESCRIPTION 1 emitter 2 [base 1 3_|base2Philips Semiconductors Preliminary specification Silicon unijunction transistor 2N2646 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT “Vee ‘emiltter-base 2 voltage = 30 Vv Veco inter-base voltage = EI - Te ‘emitter ourrent ‘average value, = 50 mA, Tew ‘emitter current (note 1) peak value = 2 A Pot total power dissipation (note 2) Tone £25 °O = 300 mW Tag storage temperature range 65 150 °C 7 [junction temperature = 125, °° Notes: 1. Capacitor discharge < 10 uF at < 30 V. 2, Must be limited by external circult. wo veo Pt nn 00] 220] 100] ol 0 Ey 706, 70 Tam (°C) Fig.2. Power derating curve, THERMAL RESISTANCE ‘SYMBOL PARAMETER VALUE ‘UNIT Raja from junction to ambient 300 KW. December 1990, 734Philips Semiconductors Preliminary specification Silicon unijunction transistor 2N2646 CHARACTERISTICS Tanb = 26 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP, | MAX. | UNIT Peo ‘Static Inter-base resistance Ves = 3V 47 7 81 kQ TCrea inter-base resistance temperature av 04 = 09 IK coefficient le Tune = -55 to 125 °C — ‘emitter cut-off current Ven = 30 V = S 2 Vv Jay = 0 Vestas ‘emitter-base 1 saturation voltage Veco, = 10V = 35 = Vv p= 50 mA Veered Inter-base current modulation Vecay = 10 V - 15 7 mA [p= 50 mA 7 Tnpulloulput ratio (note 1) Veni = 10) 56 |- | o76 Teen ‘emitter valiey point current Ves: = 20V 4 6 7 mA leg emitter peak point current 1 5 pA Vow base 1 impulse/output voltage 3 5 - Vv Note 1. Wen- Ven) 0 Vem when Veg = emitter peak point voltage, Ves; = emitter-base 1 breakdown voltage, (approximately 0.5 V at 10 uA), and Vian: = inter-base voltage. Fig.3 Impulse as a function of output voltage. Ves Vey . Vent et ween a EB ~ characteristic: | aiggto ' ! ag0 7) ra Fig.4 Impulse output circuit. December 1990 735Philips Semiconductors Preliminary specification Silicon unijunction transistor 2N2646 PACKAGE OUTLINE Dimensions in mm. Fig.5 TO-18. December 1990 736