EENG 292: PHYSICAL ELECTRONICS II

Course purpose
This course is intended to provide the graduate students with an in-depth discussion of the semiconductor physics that are essential for understanding
the underlying physics and operation principles of various semiconductor devices.

Expected learning outcomes

By the end of the course, the learner is expected to:
Discuss the physics of semiconductor devices (photonic, photovoltaic and photodetector devices).
Explain the working principle (photonic, photovoltaic and photodetector devices).

Course content
Optical properties and photoelectric effects in semiconductors. Metal-semiconductor Schottky diodes and ohmic contacts. Photonic devices:
LEDs, solar cells (Schottky barrier and single junction cells, multijucntion tandem cells, thin film solar cells, concentrator cells) p-i-n, p-n
junction and Schottky barrier photodetectors, avalanche photodiodes (APDs), quantum dot and quantum-well infrared photodetectors (QWIPs,
QDIPs), Hot carrier injection devices, Gunn diodes and semiconductor lasers and laser diodes (LDs). High-speed compound semiconductor
devices (MESFETs, HBTs, and HEMTs).

Instructional materials and equipment

Overhead projector, Power point, Flip charts, Hand-outs, Charts and Felt Pens.

References
S. M. Sze (1990).High-Speed Semiconductor Devices, Wiley, New York,
A Yariv (1989). Quantum Electronics, 3rd Ed., Wiley.
M. Shur, (1990). Physics of Semiconductor Devices, Prentice Hall,
S. Cristoloveanu and S. S. Li, (1995). Electrical Characterization of Silicon-On-Insulator Material and Devices, Kluwer Academic Publisher.
R. F. Pierret, (2003) Advanced Semiconductor Fundamentals, 2nd edition, Vol. VI, Prentice Hall.