SOU AE ELECTRONIC DEVICES BEN G. STREETMAN Prentice Hall Series in Solid State Physical E!Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 PEARSON —— Instructor's Solutions Manual, 6th Edition Ben Streetman, University of Texas, usin Sanjay Banerjee, University of Texas, Astin apy: 208 Fermat! On-line Supplement; 300 p> 1IsBN-13: 9780131497276 Fublsned: 28 Aug 2005 This Solutions Manual accompanies Solid State Electronic Devices: International Edition, 6th Edition Ben Streetman, University of Texas, Austin Sanjay Banerjee, University of Texas, Austin futon: Pearzon Higher Education {Copyri: 2008 IS6N-10: 0132454799, 1800-13: 9780122654797 Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Chapter 1 Solutions Prob. 1.1 Which semiconductor in Table 1-1 has the largest E,? the smallest? What is the corresponding X? How is the column III component related to E,? largest Eg: ZnS, 3.6 eV 124 a 0.344. smallest Eg: InSb, 0.18 eV Al compounds E, > corresponding Ga compounds E, > the corresponding In compounds Ey Prob. 1.2 Find packing fraction of fee unit cell. nearest atom separation = sBa =3.544, tetrahedral radius = 1.77A volume of each atom = 23.14A* number of atoms per cube= 6-4 + 8-+ =4 atoms 3.1AS 4 (say packing fraction = =0.74= 74% Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Prob. 1.3 Label planes. (643) 12) ¢ ’ x y xyz 2 4 2 1/2 1/4 1/2 212 Prob. 1.4 Calculate densities of Si and Gads. ‘The atomic weights of Si, Ga, and As are 28.1, 69.7, and 74.9, respectively. Si: a=5.43-10* cm, 8 atoms/cell =5-107 GaAs: a=5.65-10* om, 4 each Ga, As atoms/cell 2.22-10" 4,-(69.7 +74.9). 6.02-10" 2 density = Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Prob. 1.5 For InSb, find lattice constant, primitive cell volume, (110) atomic density. V0 44h 41.368 =2.88 4 a=647A FCC unit cell has 4 lattice points -. volume of primitive cell = °° = 67.78? area of (110) plane = 2a" AAD v2? same number of Sb atoms =3.37-10" density of In atoms = =3.37-10" Prot 6 Find density of se unit cell. -2.5A=5A 4 = atom nearest atom separation = number of atoms per cube= mass of one atom | atom « density — 12m Prob. 1.7 Draw <110> direction of diamond lattice. ‘This view is tilted slightly from (110) to show the alignment of atoms. The open channels are hexagonal along this direction. Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Prob. 1.8 Show bec lattice as interpenetrating sc lattices. at F-- NY. ie lo The shaded points are one sc lattice. ‘The open points are the interpenetrating sc lattice located a/2 behind the plane of the front shaded points. Prob. view direction (a) Find number of Si atoms/cm? on (100) surface. fee lattice with a =5.43A t number atoms per (100) surface= 4-1 +1=2 atoms a=5.43A 7 | atoms per (100) surface area = = =6.78-10% 4; (543A) () Find the nearest neighbor distance in InP. fee lattice with a = 5.87A V2=4.15A nearest neighbor distance = Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Prot Pind NaCl density. Na’: atomic weight 23g/mol, radius 14 CV: atomic weight 35.5g/mol, radius 1.84 unit cell with 2.8A by hard sphere approximation | mm 23 % Na and % Cl atoms per unit cell = 2-=1~ + sm .35.5 602-10" = 486-107 om)" The hard sphere approximation is comparable with the measured 2.17 density. Prob. 1.11 Find packing fraction, B atoms per unit volume, and A atoms per unit area. Note: The atoms are the same size and touch each other by the hard sphere approximation. radii of A and B atoms are then 1A. number of A atoms per unit cell = 8-4 number of B atoms per unit cell volume of atoms per unit cell = 1-4-(1A)’ + 1-48-(IAY = A? volume of unit cell = (4A)° = 64A* = king fraction = 2 = ~ =0.13= 13% packing fraction = 25> = 3 Latom Bator lume density = —— > = 1.56-107 atoms volume density = “rr number of A atoms on (100) plane = 4+ ae m ‘A atoms (100) aerial density = a = Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Prob. 1.12 Find atoms/celt and nearest neighbor distance for se, bec, and fec lattices. sc: aloms/eell =8-4=1 nearest neighbor distance =a bee: atoms/eell = 8-1 +1=2 nearest neighbor distance = Prob. 1.13 Draw cubes showing four {111} planes and four {110} planes. {111} planes {110} planes I Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Prob. 1.14 Find fraction occupied for se, bee, and diamond lattices. se: atoms/cell = 8-4 =1 nearest neighbour =a -> radius = . bee: nearest neighbour atom sphere volume = “ ( ‘unit cell volume =a’ ev fraction occupied = ——16 @ diamond: atoms/cell = 4 (fec) + 4 (offset fee) = 8 v3 a:v3 A> > atom radius = “2 nearest neighbour 8. fraction occupied = —128 _ 0.34 a5 rs Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 rob. Calculate densities of Ge and InP. The atomic weights of Ge, In, and P are 72.6, 114.8, and 31, respectively. Ge: GaAs: Prob. 1.16 (5.66:10%em) 441-10" 1 - 72.655 6:02:10" a (5.87-10"cm)" 1.98-10” 4, -(114.8+31) 4) a= 5.66-10* om, 8 atoms/cell & = 4.41107 2, mi = 5.3255 a=5,87-10" cm, 4 each In, P atoms/cell =1.98-107 3 6.0210? Sketch diamond lattice showing four atoms of interpenetrating fec in unit cell. Full Interpenetrating Lattice Four Interpenetrating Atoms in Unit Cell Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Find AISb,As;.x 0 lattice match InP and give band gap. Lattice constants of AISb, AlAs, and InP are 6.14A, 5.66A, and 5.87A, respectively from Appendix II. Using Vegard’s Law, 6.14A-x + 5.66A -(1-¥) AlSbo4:Aso.s6 lattice matches InP and has E,=1.9eV from Figure 1-13. 87A > x= 0.44 Find In,Ga, x P to lattice match GaAs and give band gap. Lattice constant of InP, GaP, and GaAs are 5.87A, 5.45A, and 5.65A, respectively from Appendix III. Using Vegard’s Law, 5.87A-x + 5.45A-(I-x) =5.65A > x= 0.48 Iino «sao 2P lattice matches GaAs and has E,=2.0eV from Figure 1-13. Prob. 1.18 Find weight of As (kg=0.3) added to Ikg Si in Czochralski growth for 10"°cm” doping. atomic weight of As = 74,9-£, 33-10" 3.33-10" = » 429.2em’ = 1.43-10"*As atoms 1.43-10"atoms - 74.98, rn = 1.8-10*g As= 1.8-107kg As Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Chapter 2 Solutions Prob. 2.1 (a&b) Sketch a vacuum tube device. Graph photocurrent I versus retarding voltage V for several light intensities. i Av | — | | light intensity Vo Vv ‘Note that V, remains same for all intensities. (0) Find retarding potential. Ae2440A=0.244um —— D—4.09eV L24eV-ym _g . 1.24eV- um -4.,09eV = 5.08eV - 4.09eV ~ eV Mum) 0.244um V, =hv-@= Prob. 2.2 ‘Show third Bohr postulate equates to integer number of DeBroglie waves fitting within circumference of a Bohr circular orbit. = fen ogg TY and p,= mvr ane mh? ane, P, =nh isthe third Bohr postulate Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Prob. 2.3 (a) Find generic equation for Lyman, Balmer, and Paschen series. — mm _ 32ne2n i? Ja2nh?-he _ See nen? mq"(n,"-n,") mq n,-n, 8(8.85-10 EY. (6.63-10Js)'- 2.998-10° 8 _n’n, 9.11-10"kg - (1.60-10°C)* nn’ 4 = 9.11.10. 2 nj =n, =1 for Lyman, 2 for Balmer, and 3 for Paschen ©) Plot wavelength versus n for Lyman, Balmer, and Paschen series. TEN SEES FS Be a ET ae ae | Sra) RROD 7 te ae te a at $ tie rot eee “es iat r tar = oo a a} ter 3 7a“ Soe LYMAN LIMIT 9114 eo aa oe a EASED Pee aaa, EE PASCHEN LIMIT 8190 3 7. zt 476 459 BALMER LIMIT 36444 Prot Show equation 2-17 corresponds to equation 2-3. That is show c-R Torr From 2-17 and solution to 2.3, Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Prob. 2.5, (a) Find Apx for Ax=14. ap, dx= + gp, =A = 63:05 an 4n- Ax 4x10 m = 503-1075 8 (0) Find At for AB=10V. h Ah 4.14-10%eV-: ABA OM ale 30-10"%s, Prob. 2.6 Find wavelength of 100eV and 12keV electrons. Comment on electron microscopes compared to visible light microscopes. B= 4m? + v= /2= m 6.63-10°"J-s 2-941 10'kg, £4 .4.91-10%F -m For 100eV, 2.= BE? -4.91-10°F? «m= (100eV-1.602-10" 2)? -4.91-10°F3 «m= 1.23-10%m = 1.23A For 12keV, = BF -4.91-10F! m= (1.2-10€V-1.602-10 Z)4-4.91-10F* -m = 1.12-10m=0.112A ‘The resolution on a visible microscope is dependent on the wavelength of the light which is around 5000A; so, the much smaller electron wavelengths provide much better resolution. Prob. 2.7 Show that ris the average lifetime in exponential radioactive decay. The probability of finding an atom in the stable state at time tis N()=N, - to the probability of finding a particle at position x for finding the average. ‘This may also be found by mimicking the diffusion length calculation (Equations 4-37 to 4-39). Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Prob. 2.8 Find the probability of finding an electron at x<0. Is the probability of finding an electron at 220zer0 or non-zero? Is the classical probability of finding an electron at x>6 zero or non? The energy barrier at x0 is infinite; so, there is zero probability of finding an electron at x<0 (|y?+0). However, it is possible for electrons to tunnel through the barrier at S6 would be quantum mechanically greater than zero (|y/|?>0) and classical mechanically zero. Prob. 2.9 Find 4:p2+2:p2 +22 for W(xyszst) = AreKOrs0, 7 (no ‘Ar guionsarto( A J i & IAP extoersnglorsrrsogy : Jeter = 100-A7 : Jarome JAP eonersseiiontrtogy, jae wore ae ) Avekioxortoge eA IS gy flaferammrssgooes rasa i? 28h _ 911-10" kg Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Prob. 2.10 Find the uncertainty in position (Ax) and momentum (Ap). 4 ‘= fF sin( 25) com and" “¥dx =1 be AD } (x) = fie x vax = 2 usin (2) = 0.5L (from problem note) (x)= Ie ox Wd = zie -sin® (2) dx =0.281? (from problem note) Ax= (x?) = (x)? = 0.281? - 0.5L = 0.17. h Ap > 47 4n- Ax L Prob. 1 Calculate the first three energy levels for a 104 quantum well with infinite walls. (6.63-10)* 8 E, = 6.03-10°J = 0.377eV 1377eV = 1.508eV -0.37TeV = 3.393eV Prob. 2.12 Show schematic of atom with 1s°2s*2p‘ and atomic weight 21. Comment on its reactivity. ruclous with protons and This atom is chemically reactive because ‘1 neurons the outer 2p shell is not full. It will tend electonsin ts to try to add two electrons to that outer shell. \.)-2 electrons in 2s \ / [coon — Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Chapter 3 Solutions Calculate the approximate donor binding energy for GaAs (¢,=13.2, m*t = 0.067m,). From Equation 3-8 and Appendix Il, Prob. 3.2 1:107kg)-(1.6-107C)"_ PE -13.2)(6.63-10Fs)" LOMO" = 834-101 =5.2 meV Plot Fermi function for Er=leV and show the probability of an occupied state AE above Ey is equal to the probability of an empty state AE below Er so f(E, +E) =1-f(E,-AE)- use fE)= —L- and kT=0,0259eV test E(ev) | (E-Ery/kT f(E) to 0.75 9.6525 0.99994 09. 0.90 -3.8610 | 0.97939 e 0.95 1.9305 0.87330 eg 0.98 0.7722 0.68399 bai 1.00 0.0000 0.50000 aa 1.02 0.7722 | 0.31600 oe i 1.05 1.9305, 0.12669 ae = uw 4.10 3.8610 | 0.02061 ” il 1.25 9.6525, 0.00006 ‘occupation probability above E, = RE, +AE) = 1 +e lew tet This shows that the probability of an occupied state AE above Ex is equal to the probability of an empty state AE below Er. Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Prob. 3.3 Calculate electron, hole, and intrinsic carrier concentrations. B,=LleV No=Ny n=10" 5 BE ,=0.2eV Be-E,=0.25eV T=300K n=10"° 2 n=N.-e > No=me F =108 5. Ny = 156-10" B= 156-10? a,-¢ OG" = 871-104, ome n, = Ya-p = 935-10 2 (oo: = \NoNye iy ot set Prob 3.4 Find temperature at which number of electrons in I and X minima are equal. from Equation 3-15 By _ Nex N 1, Since there are 6 X minima along the <1 0 0> directions, Equation 3-16b gives: Ny 6-(mx) #6-(030)" Ny €(my)* 2 (0.065)' ‘ Fass ity 2030) SF itorn, an, ®r (0.068)" Ou), ot §:(030)" 59.4 6-(0.30)" (0.068)' ons =1m(59.4)=409 -» et = 235eV T= 988K Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Prob. 3.5 Discuss m* for GaAs and GaP. What happens if a valley electron moves to the L valley? From Figure 3.10, the curvature of the T valley is much greater than L or X. Thus I’ valley electrons have much smaller mass. The light mass I’ electrons in GaAs (#4=8500) have higher mobility than the heavy mass X electrons (j1;~300) in GaP since pin is inversely proportional to m*. If light mass electrons in I’ were transferred to the heavier mass L valley at constant energy, they would slow down. The conductivity would decrease (see discussion in Section 10.3). Prob. 3.6 Find Eg for Si from Figure 3-17. forn,, andn, on graph 1 n, = 3-10" 107 b =10° =410°2 Bl- This result is approximate because the temperature dependences of N.,. Ny, and E, are neglected. In 22 =Inn,- Inn =13eV for Si (Gee above) -> E, = 2k-| —{—"#- | =2-8.62-10" | 7 1 SE nats k x Ea Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Prob. 3.7 (a) Find Ng for Si with 10"‘cmi? boron atoms and a certain number of donors so Ep-Ej=0.360V. Bs ne @ a, nj =N,-N, > No=n, +N, =nge +N, =1.5-10 5-29" + 10" 1, = 2.63.10 (8) Si with 10"cm’” In and a certain number of donors has Ey-Ey=0.26eV. How many In atoms are unionized (i.e.: neutral)? fraction of F, states filled = f(E,)= _ er +0979 lte® 1+e amv unionized In = [1-f(E,) ]-N,, = 0.021-10° “10% a; Prob. 3.8 ‘Show that Equation 3-25 results from Equation 3-15 and Equation 3-19. Find the position of the Fermi level relative to E; at 300K for n.=10'° em”. Equation 3-19 p,=Ny-e a -HoBe Bhp Boke porNye =Ny-e -e ¥ =n,-e using 3-21 yields Equation 3-25b for Fermi level relative to Bj at 300K for no=10'° em 15-10 10° E,-B, = 0.0259eV -In- 13472 Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Prob. 3.9 Find the displacement of E; from the middle of Ey for Si at 300K with m,=1.lmg and my=0.56mo. Ej is not exactly in the middle of the gap because the density of states Nc and Ny differ. Prob. 3.10 Is Si doped with 10" donors per cm’ n-type at 400K? Is Ge? At T=400K, Figure 3-17 indicates that n > n; for Si doped with N= = 10" cm®; so, the Si would ben-type. At T=400K, Figure 3-17 indicates that n =n, =10' cm" for Ge doped with Ng = 10" cm”; so, the Ge would require more donors for useful n-type doping. Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Prob. 3.11 Calculate electron, hole, and intrinsic carrier concentrations. Sketch band diagram. No=10° 25 Ny-S-10" 2; Ey=2eV T~627°C-900K n= 10” 3 a > ECB, =k-T-ln N } = -ooreev-{ ic E,-Ey = [(Ec-Ey 4B E,)] = [E,-(Ec-E,)] PaNye F = 5.10% t.¢ OMY = 3.7.10 4, He n= fn-p = 19-10" 3 [me n, = J/No-Ny-¢ 2 may ako bes] [2eV-0.36eV] = 1.64eV Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Prob. 3.12 (a) Show that the minimum conductivity of a semiconductor occurs when "= ":\{Ho ! Ha n ome ornstpen) ante Bay} +] = 0 for minimum conductivity at electron concentration n.., 2 (6) Calculate Onin and 0; for Si. =2-q-n,-fit, By = 2-1.6-10C-1.5-10" +, 13509-4802 = 3.9-10° ah 6 = q-(0y “Hh, FM, -H,) = 2-1.6-10°C-1.5-10" 3;- (13502-48092) = 4.4.10 at or the reciprocal of p; in Appendix II may be taken 9, Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Prob. 3.13 (@) Find the current at 300K with 10V applied for a Si bar I ym long, 100 yon’ in cross sectional area, and doped with 10" cm? antimony. 10V 10%em With, = = 10° & the sample is in the velocity saturation regime. From Figure 3-24, v, = 107 = T=q-A-n-v, = 1.6-10C-10%cm? -10"7 1-10" @ = 0.164 (b) In pure Si, find time for an electron to drift Im in an electric field of 100%? For 10°£? from Appendix III, jt, = 13502 Va = Hy&= 1350-1004 = 1.35-10° L__10%cm vy 135-107 low fiel =7.4-10"s = 0.74 ns scattering limited velocity v, = 10’ from Figure 3-24 high field: | L_ 10%em 7 em =10"'s=10ps 4 (a) Find n, and p for Si doped with 10" cm” boron. N, >, sop, =N, = 107; may be assumed N, = 10" 5 gives u, = 25092 from Figure 3-23 6-10C-2508-10" 5 = 4.054 (b) Find n, for Ge doped with 3-10"? Sb atoms per cm. ‘Assuming N, is zero and using Equation 3-28 gives n, = i +N, or n? -N,-n, =n? =0. Dy By quadratic formula, Nyt yNitdn? _ 3-10" 25 & (-10" 5 )°+4-G-10" n, = Net Nateend _ 310 ae # YG 1" S41" ey % 2 2 4-10" 2 Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Prob. 3.15 Find the current density for applied voltages 2.5V and 2500V respectively. For 2.5V, 6 = q-H,-M, (Binee n, > n,) = 1.6-10°C-1500 22-10" 5 = 0.24 gt 1 1 17 Qvem Po Ua Re Bk. 417 2-cm- -10%cem _ 2.83-10°Q-cm? A = 882-10" 2 for2.5V 2500V 10%cm For 2500V, & = = 5-10°& which is in the velocity saturation regime. 6-10°C-10% 25-107 2=1.6-10° Ay sev A 8 € > General Wavefunction: Y(x,t) = a-e"" Energy at D=h-o = x ~_ = 3eV + 4eV = TeV = 7eV-1.6-10 5 = 1.12-10°F iy 1,12. ars 1.12-10"T 1.06-10" Hz oF 1.06.1 1 s ft2-100-2-m, _ flt2-10F-2.9.11-107g PLADAOMT 291110 _ 1 951g a (1.06-10"7F-s) sqft 810" x- LastoMn ‘Wavefunetion at D: ¥(x,t where a is the normalization constant Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Prob. 3.17 Show the electron drift velocity in pure Si for 100 is less than vg. Comment on the electron drift velocity for 10° &. =E-p, = 100E-13500 dmv =kT > “ena 9.54-10° 2 135-108 50, Vy < Vy for 100, For 10° £, the equivalent calculation for drift velocity assuming constant jly gives 1.35-10" 2 which is larger than the thermal velocity. ‘The device is in velocity saturation, Prob. 3.18 Plot mobility versus temperature. 05 = 104 § 2 2 3 103 £ 3 a 107 0 100 200 300 400 500 ‘Temperature (K) Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Prob. 3.19 Repeat plot of mobility versus temperature in 3.18 considering carrier freeze out. 10° Electron mobility (em2/V-s) 3 0 100 200 300 400 500 ‘Temperature (K) ‘When freeze-out occurs, ionized impurity scattering disappears, and only the phonon scattering, remains. In Si, other mechanisms, including neutral impurity scattering, contribute to mobility. Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Prob. 3.20 Find the hole concentration and mobility with Hall measurement on a p-type semiconductor bar. The voltage measured is the Hall voltage plus the ohmic drop. , The sign of Vi changes with the magnetic field, but the ohmic voltage does not. 3.2mV - (-2.8mV) 2 2mV-3.0mV = 0.2mV 10° A-10% 2 tion 3-50) =3.125-107 4 Vg, Eauation 3-50) = +e = wet i 2:10°V-5-10%cm-2-10%cm “22 Equation 3-51) = > = 0.0330. i See 3-10°A-2-10%em a nn -2 at 1 Ope ws Prob. 3.21 Find Viz with Halll probes misaligned. Displacement of the probes by an amount 6 give a small IR drop Vs in addition to Vi. The Hall voltage reverses when the magnetic field is reversed; however, V3 does not depend on the direction of the magnetic field. for positive magnetic field: Vi, = Vy + Vy for negative magnetic field: Vig =-Vy, + Vy Vin > Van =2+Vir Vie V.- a 2 So, the true Hall voltage may be obtained by subtracting the voltage with a negative magnetic field from the voltage with a positive magnetic field and dividing by 2 Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Prob. 3.22 Find expected resistivity and Hall voltage. 1, = 700% from Figure 3-23 5=q-1, "0, (P, is negligible) = 1.6-10"°C- 7009-107 1 = 11.25h- Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Chapter 4 Solutions Prob. 4.1 State expected charge state for Ga, Zn, and Au in Si sample with Ey 0.4eV above valence band. From Figure 4-9, Ga: Er> Ga‘ so singly negative Zoi: Ey> Zar but E-< Zn’ so singly negative ‘Au’: Au’ Sn= 5-10" as = An Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Prob. 4.5 Find expression for E(x), solve at a= 4;, and sketch the band diagram indicating € . (@) &) us Hy © depends ona but not x or N, () (1) = 0.0259V-10" 2 © at) oo = 259, Find the separation of the quasi-Fermi levels and the change of conductivity when shining light. ‘The light induced electron-hole pair concentration is determined by: n= dp=g,°t= 10" --10%s= 10" 4 $n < dopant concentration of n, = 10" so low level +1035 = 11-10" (15-10 57° ee ea 10° 3, 300% from Figure 3-23 Di is 0.02590 +102, & 10", =0.518eV 10° quasi-Fermi level separation = F, - F, = xron( 22) = 0.0259eV-In| Ao =q-(u,-6n + 1, -8p) = 1.6-10°C-(130095-10" 5 + 46392-1035) = 0.0282 ah Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Prob. Calculate the quasi-Fermi level separation and draw a band diagram for steadily illuminated n-type Si. The light induced electron-hole pair concentration is determined by: 119% = 198 1 10" 1-10%s = 108 8n = dopant concentration of n, = 10 => which is comparable with Ny -» so NOT low level and 5n* cannot be neglected 1 = = 10% 10%s-10° 2 . +n, -8n +a, -8n? -8n+ 10? 2-5n? solve for n= 6.18-10" 2, =p 107= 107 10% 4 8 3, +6.18-10" 1,81 _ 9 gysg¢y jn lO ae tO18-10" 5 ny 1.5-10° 3, 6.18-10" 1; -E,= kT-in 0.301eV .0259eV «in. 0.276eV 0259eV -In- =0.288eV 15-10" 5 ‘quasi-Fermi level separation = F,-F, = 0.301eV+0.276eV = 0.577eV Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Prob. 4.8 Find the current with 10V with no light applied. 10V with light applied, and 100,000V with light applied for the doped Si bar. A=0.05 amz By =4,-n,-3n+a,-5n* > 10" b-=107* a (10! 4-8n+sn’) dn? + 10" bn aye 2 ono" n= 6.18-10" 4, = 8p 10V and no light: gx IgM em "cm 11,= 107082 from Fig 3-23 “dy Hy 0.0Scm* -1.609. 10C-10 4,-107092-5 428A om 10V and light: 1=A-q-[(no+ 5n)-p, +8p-H, ]-E I= 0.05em*-1.609-10°°C-{ (10 2+6.18-10% 1= 0.8164 070§2 +6.18-10" 550g |. 5X 100,000V and light: y,=107 and g = 100.000V 2em FA-q-[(np*8n)-v,+ 5p, -€] I= 0.05em*-1,609-10%C-[(10" 4+6.18-10" 2 53-10°A = 50,000, 0S + 6:18-10" 1,-550¢2-5] Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Prob. 4.9 Design a Sum CdS photoconductor with 10M dark resistance in a 0.Sem square. In the dark neglecting po, pr i-— —— © q-Hy-n, — 1.609-10°C-250.10" 250Q-cm, PL, po Rewt _ 10'Q-w-5-10%em _ 45 wet P 2502-cm a number of solutions fulfill this L-w relation including that shown below with w=0.5mm and L=lem oem 0-Smm 1 1 -—____1___. = 21.604 4 [C0 #50) + 4, -3P] ‘ = _21.6A-em-lom. _ 3 69.1959 3-107em-5-10%em 1.609-10°C-[ 250% +0" 25-410" 5) + 15-10! AR =10"Q - 8.62-10°Q = 9.14MQ Prob. 4.10 A 100mW¥ laser (X~632.8nm) is focused on a 100um thick Gads sample (a= 3-10° 4-). Find the photons emitted per second and the power to heat. =100mA-¢*"*#°"" OmA so absorbed power is full 100mW = 0.14 energy of one photon = 124€V-#™ 1 ogey 0.6328, power converted to heat = 1.960V-143¢V oom =2.7-107 2 1.96eV )hotons per second = — og =3.19-10" ae Eee 1609-10 4,-1.966V sd or yhotons 0.0734 hotons per second = ———Pewertophotons 0.073} 1g. 1917 pone c m 1.609-10" hoton energy —1.609-10 1.435% aa Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Prob. 4.11 Find the photocurrent AT in terms of ty and 1; for asample dominate by ty. Ao = eH -AN=Q-Hy "Bay Ts transit time. L vo Vit Vey L _ WeAsAg _ VA‘ Bp L L Prob. 4.12 Find F(x) for an exponential excess hole distribution. for 3p > Pp P(X) = 8px) = Ap-e ” =n,-e =fehte) a] Apen*t, Since the excess minority hole concentration is assumed to be small compared to ny throughout, so no band bending is observable on this scale. Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Prob. 4.13 Show current flow in the n-type bar and describe the effects of doubling the electron concentration or adding a constant concentration of electrons uniformally. € electron diffusion (high to low concentration) > current density (J,) for diffusion > electron drift & €current density (J,) for drift note: currents are opposite electron flow because of negative charge initially: J, diffusion = q-D, -& J, drift=qen-p,-& double electron concentration : J, diffusion =q-D,-2@ > doubles J, drit=q-2n-p,-€ — doubles add constant concentration (1): J, diffusion =q-D, “> does not change J, drift =q-(n+n,)-p,-€ — increases by q-n, -}1,°€ Pre 4 Show the hole current feeding an exponential p(x) may be found from Op/t ‘The charge distribution, Q,, disappears by & recombination and must be replaced by injection an average of 7p seconds. ‘Thus, the current injected must be Qui 7. 4p ; Tape L * Q,=4-A: fop-dx=q-A- [Ape 7 -dx=q-A-L,-Ap “P -A-D,-Ap x Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Prob. 4.15 Draw band diagrams for exponential donor and acceptor dopings. Show field directions and direction of drift of minority carriers. +—eé =, Bye e—>__s ae — ee = Ss Oa peer cl ee =e > acceptor doping acceptor doping ‘Note: Both minority carriers are accelerated “downhill” in the doping gradient, Prob. 4.16 Explain how a built-in field results from a doping gradient. ‘The donor doping gradient results in a tendency for electrons to diffuse to the lower concentration areas. As the electrons diffuse, the positively charged ionized donors pull the electrons back due to the coulombic force. This force corresponds to an electric field oriented in the same direction as the concentration gradient. The electric field results in drift current equal and opposite to the diffusion current, and the sample remains in equilibrium with a built-in electric field. nlx) €* diffusion - &> The acceptor doping gradient results in a tendency for holes to diffuse to the lower concentration areas. As the holes diffuse, the negatively charged acceptor ions pull the holes back due to the coulombic force. This force corresponds to an electric field oriented in the direction opposite the concentration gradient. The electric field results in drift current equal and opposite to the diffusion current, and the sample remains in equilibrium with a built-in electric field. Pex) - me Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Prob. 4.17 Include recombination in the Haynes-Shockley experiment and find Ty. To include recombination, let the peak value vary as ¢ *. _ Ape ae Jaed, peak V, at x=0=B. Pp Ap-e* fe [ax-D,-t, - er! __ Ape? hoe Va [4x-D,“t; ais 80mV _ 200us 150us 150s a= |S. 5 aE = DOS 216.4 20mV | SOus * 7 a i Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Chapter 5 Solutions Prob. 5.1 Find the time that it takes to grow the first 200nm, the next 300nm, and the final 400nm. Draw and calculate step heights after reoxidation, ‘Time for first 200nm = 0.13 hours from Appendix VI at 1000°C ‘Time for next 300nm = 0.6 hours for $00nm — 0.13 hours for 200nm = 0.47 hours ‘Time for final 400nm = 1.8 hours for 900nm —0.6 hours for 500 nm = 1.2 hours Oxidation Time After Etch = 6.0 hours for 2000nm ~ 1.4 hours for 900nm at 100°C 4.6 hours Oxide Growth Inside Window = 1700am. Step in oxide = 564mm Step in Si=264 nm 504nm, _, Original Si surface 0.44 -900=396nm. Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Prob, Plot the distributions for B diffused into Si (N¢=5-10"* 2; ) at 1000°C for 30min (D=3-10" = ) with (a) constant source N,=5-10” 1 and (b) limited source N.=5-10" 25 on the surface prior to diffusion. ‘The Gaussian distribution differs from Equation 4-44 because all atoms are assumed to diffuse into the sample (i.e. there is no diffusion in the -x direction). VD-t = /3-10" -30min-60-5; = V5.4-10om? = 0.0735 x x fa) N=N, -erfe| ~ cerfe| t ® . (as :) ( a] ne sium) _u_erfew Nz) = Noerfeu re 00785 05047 2a 10 01470 1.0 0.16 80x 108 02305 115 0.033 Lx 10" all 02990 2.0 0.0048 ax ios %j-0.4um w" 03675 25 0.0008 © 20x 10 z casio 30 cooon2s © 12x 10% : N. N. (ad ol w n-—Ne -—™ a. » Va-VD-t 0.1302um z{um) uw _exp(—w) Mx) well Gos os oO 1470 1.0 037 Lax 10 025 15 0105 40x10 9 3 ym, 0.2040 0.018 G9 x 10" 03675 oon9 = 7.3 x 10% a ae Prob. 53 een) For the unlimited source in Problem 5.2, calculate the time to achieve a junction depth of I micron, ‘Use N, from Appendix VII and D from Appendix VII. x) Lyon lym NEN, -erfe = 10° -erfe c ° (Aa) = ; Bho 2-10% “10% 5 yn ___10%em__ 5.9 23-10% at 2/3-10 og 1t=9260s =2 hrs 34 minutes 20 seconds Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Prob. 8.4 Find the implant parameters for an As implant into Si with the peak at the interface. R, =O.lum > Energy = 180keV from Appendix IX Straggle ~ AR, = 0.035pm Ion Distribution from Equation $-1a=N(w) = om ee? AR, Nye = 5-10" 2 ~ate $ =f = Pa-AR, V2n-3.5-10%em 8.77. = 5-10" -1;-8.77-10"%em = 4.39-10" Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Calculate and plot the P distribution. Energy = 200keV > R, =0.255um, AR, Dose = $= 2.1-10" 3 0.0837, from Appendix IX 21-10" a 2m -8.37-10%em From Equation 5-1, Ns) 21-10" ay Peak N= = 10° 3 V2x-8.37-10%em «= Lety be the distance (yum) on either side of R,. NQ,#3)= 10" aye! 1 im) _N (By m 0 aia 10° 0.05 8.4 x 108 01 4.9 x10 015 2x10 5.8 x 10! x 1007 ie 1.6 x10 10! 107 N(em) 10 um) Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Pri 6, In patterning the structure shown in the question, design the mask aligner optics in terms of numerical aperture of the lens and the wavelength of the source. 8h NA Cam} Prob. 5.7 4) Calculate contact potential Vo, in a Si p-n junction at 300 K. vy =F tn NeNe 4 & V, =0.02591In —NeNe_ 15-10")? b) Plot Ep vs. Na ‘Convact Potential (V) “Maximum eleceie field (Vem) Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Prob. Find the electron diffusion and drift currents at x, in a p*-n junction. & e forvn Assuming space charge neutrality, the excess hole distribution is equal to the excess electron distribution dn(x,) = 3p(x,) Prob. 5.9 A Si junction has N, =10" 2; and N, =10' 2. Find (a)Ep, Vo and band diagram and (b) compare this value of V, to that from Equation 5-8. @) By By KT-InP2 = 0,0259eV-In o.407eV -B, =kT-InPe =o, =0. = n, 15-10 Yo. E,-E,, =kT-In™ =0,0259ev- ne 0.347eV n, 15-10" 35 q-V, =0.407eV + 0.347eV = 0.754eV 107 2,19 (©) 4-V, =n Ne ~ o,0259ev-in 2 at = 0.7546 ny (15103) Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Prob. 5.10 Find Vo, xno. ¥pa. Qs, and Ey in Si at 300 K. ky, NNe a i 4-10" 35-10 4, 0.0259V In (15-102 Q.=-Q =qAxq Ny =0.107C &, = —aNa Se = 5.1.10 viem es Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Prot Describe the effect on the hole diffusion current of doubling the p* doping. The depletion edge and electron diffusion current on the p* side may be ignored and J, (iffusion) = Since this is independent of the p" doping, there will be no change. Prob. For the Si p"-n junction, find I for V=0.5¥. sw D, w Ieq-A ef =q-A- Bet sat .S-10% yt we C510") StS a sya fow-10%s 510° 2 I= 1.6-10%C-10°em? (a) Why is C, negligible in reverse bias? For reverse bias of more than a few tenths of a volt, Ap, =-P,. Changes in the reverse bias do not appreciably alter the (negative) excess hole distribution. The primary variation is in the width of the depletion region, giving rise to the junction capacitance. (®) With equal doping, which carrier dominates injection in a GaAs junction? Electron injection dominates since jp. With no=pp it is clear that a carrier with higher mobility will determine the injection. Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Prob. 5.14 (@) Find G for On the n side, 10V for a Si p*-n junction 10 cm* in area with N, =10" 25. ).0259eV «In. =0.288eV 15-10" 2 On the pide, E,,-B, = 4B, = 0.555eV 4-V, = 0.555eV+0.288eV = 0.834eV ons, Ng¥ _ 10cm? (2-1.6-10"C-11.8-8.85-10% 5-10" 35 P 2 (6) What is W just prior to avalanche? zoe ay =2.78-10"F eV) From Figure 5-22, Vi=300V from Figure 5-22 Vv, -V¥ 118-885-102 w= ow (Bena esiBg AD OWN. aN, . 2 0.834eV_ Show & depends on doping of a lightly doped substrate. (pa) «fee IT the lightly doped side dominates so the doping variation of V, has only a minor effect 1.98-10°em = 20m Prob. 5.15 Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Prob. 5.16 For the abrupt Si n'-p junction, calculate the peak electric field and depletion capacitance for reverse bias. Find the total excess stored electric charge and the electric field far from the depletion region on the p side. Depletion region is mostly on the p-side. Vou =V;+ V, = V, = 100V we 28s Mom f 1, 1 qa (N, NG Since N, is very high, 1 may be neglected. 1,6-10°C-10" 35 _ 2100 © 11410%em yA _ 11.8-8.85-10 £-0.0001em? Ww 11410%em, =1.75-10°% =0.916pF 1=20-10" Q, =20-10°A-0.1-10%s = 2-10°C Far from the junction on the p-side, the current is only hole drift. 1=20-10°A=q-A-p-p, &= 1.6-10C-0,0001em?-10" 2,-200¢2-€ &=025% Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Prob. 5.17 Find the electron injection efficiency Iy/l . snpen teat fi 1, so making m, > p, (Le. using n'-p) increases “= Find Ip(tp) when Pp=M. D, D, 1=q-A|De-p, 4 De q (Pe Pa Ty, is composed of D, Lik) = q-Ae nC) =A =I- =q-A| Da 1,(,)=1-1,,) wl? n? Since N,=Nyony=pe=< giving 1,%,)=a-A [P { thala(s - 7 Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Prob. 5.19 For the given p-n junction, calculate the built-in potential, the zero-bias space charge width, and the current for a 0.5V forward bias. (@)_ Calculate built-in potential: forN,=10" 2yandN=10" > Ve = bette = - [Xan] 2, 10" | ys.07 .026V -[11.1415.7] = 0. (b) Calculate total width of space change region we |25:,/ NatNe} a UNNs ‘Thermal equilibrium means total potential dr across the P-N junction equals Vo 1 14 ae wa|s, 0.70V W= J1.3-10° = -[1+.01]-0.70V = 9.6-10°% cm = 0.96 microns Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 (©) Forward bias current: = 13007 = 500 1=2.5-10°s 7 : D-H, ("| = 1500: a 0.026V = 38.9—— S 8 om’ Ve om? D, =u, =] =450-0.026v = 11. re Jq = (1.6-10°°C)-(1.5-10° -(6.88-10 S+1.25-107° =e 5-10" ow. I=A-J, ( #4) = (oaren) {asso s,)| 6%] =22:10°A Most of the current is carried by electrons because N, is less than Ny. To double the electron current, halve the acceptor doping, Prot Find the total forward bias junction capacitance and reverse bias electric field. For n*-p in reverse bias, A 2 \ VV Forn*-p in forward bias, co “) =0.225-4; because only drift current I= 4-11, -N,€ inpregion far from junction 0.2254; v ‘ N, 2e-V, }_ | 2-11.8-8.85-10" -300v P qeNy 1.6-10°C-10% 45 2-10%cm=20um, Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Prob. 5.26 Calculate the capacitance and relate 10 No. This means the slope of 2 versus Vq is so knowing the area and material AMaN type allows N, to be found. ForN,=10" 5, V,=0.84eV -» —> =1.197-10 £-(0.84eV+V,) c ForN,= 10", V,=0.94eV # = 1.197-10® %-(0.94eV+V,) dao")? RO Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Prob. 5.27 Calculate the Debye length for a Si p-n junction on the p-side with Nq = 10" cm’? and Na = 10", 10%, and 10 em. Compare with the calculated value of W for each case. Find Lp and W, leaving Ng as a variable. ar? 2 a ye : ts SE S_ KTP _[11.8:8.85.10 coozmev'l ait aN, aN. 4 1.6-10"C | NE (oats) (tf -siz [a Ne \ rovers} m )\N ON oo | ("225.35 Ny Plugging the doping values into these equations: Nacem) | Lp (em) Wem) | Lo/ W(%) 10 4.11 x10" 3.01 x 107 73 10" 4.11 x 10" 3.27 x10" 8.0 10 4.11 x10" 4.93 x 10 12.0 ‘The Debye length varies from 7 to 12 percent of W across this doping range. Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Prob. 5.28 For the given symmetric p-n Si junction, find the reverse breakdown voltage. “tp, =-W2 ng = WI ‘The breakdown voltage plus built-in voltage is: J €-dx=the area under the triangle ; 28h ).28 aN, = 18 -8.85-10% £-(5-10° £)* 1.6-10°C-10" 25 tony Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Prob. 5.29 The current in « long pt-n diode is tripled at t = 0, (a) What is the slope of §p(tn = 0) ? The slope triples at t= 0: The slope is #,| S| = -31/aADp lea=o (b) Relate V(t = 00) to V(t =0-). Call V~ the voltage before t = 0, Call V™ the voltage at t = co. att=0-: AD, T= Uty, eV nT T; at t=oo: 3r= ee, event VO =v + us or V~+0.0285 Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Prob. 5.30 Find the stored charge Qy as a function of time in the n-region if a long p*-n forward bias current is switched from Ip; to Ivz at t= 0. ar Tr Jer Q,) =Tn-t, Q,@)=In-t, 2400), $0, t, dt Taking the Laplace transform fa 20 55.9, 69)-1 st, Tey I, 1 -(bai,)\ Qo & a seat ‘Transforming back to time domain Q0= fre) eye Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Prob. 5.31 The forward current in a long p*-n diode is suddenly raised from 0 to Tat t = 0. (@) Find and sketch 0,0. QW), 4a) dt 1 Q(t)=AtBe* att=0,Q0)=A+B att > infinity, Q,(6) = A=I 1) thus, B=-I7) Q,()=15, (1-e"*) (b) Find 4p,()) and v(t) in the quasi-steady state approximation. + ok 17 aA: [ap, 6 F dxy= 4-A-L, AP, Q(t Then Ap, (t) TAR, Ap, (t)=pyret = Tus pat. sof 4. (t) a Up xr {ES Fa 4 vit) = Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Prob. 5.32 Sketch the voltage across a 1 KQ resistor in series with a diode (offset 0.4 V, resistance 400 2) and a voltage source of 2 sin wt. An ideal diode is a perfect short (resistance is zero) when the voltage across the diode is greater than the offset voltage. If the voltage is less, the diode is a perfect open, (resistance is infinite). Thus, v, <04,v, =0 (v, -0.4)-1ka 1KO +4000, v,>04,V, 1 ev ana 4 oO | /, ” PAA £\ Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Prob. 5.33 Plot current versus voltage. 10 (Curent (A) ge 10's 10 10 oa one ae ae se ‘outage V) Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Prob, 5.34 Find Q, and Twhen holes are injected from p+ into a short n-region of length 1, if 6p varies linearly. sraua | mg AL APa Qyraea. fdsnqen LR 1=1,(6,-0) =-4 Slzn) Aps| Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Boundary conditions: ‘When x, =0, ép= Ap, =C+D Slxn) When x, =/, ap=0=Ce'* +De* Apal Thus, Ape aE 0 om eet Plugging C and D back into the solution wpe? -s*] a) 2(%,)°§ ee fara, 22e)| = dx, senor) ») | etn |] FF 1 yaoi Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Prob. 5.36 For the narrow-base diode, find the current components due to recombination in n, and recombination at the ohmic contact. ‘The steady-state charge stored in the excess hole distribution is | Q,-a-Af ats,)-tx,-a-A [lee Sep. oF hax, Q=a-A-L, [-c(e#=}+(c*a)| ere o-2 Q=q-A-L, Ap, —— > eee The current due to recombination in n is The current due to recombination at x, =1, AL, ea sees osch ile § 7 5 OL ‘These correspond to the base recombination and collector currents in the p-n-p BJT with Va =0 given in Equation 7-20. Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Prob. 5.37 If the n region of a graded p*-n has Ny=Gx", find €,, E(X), Q, and G; a t -4 Th Gx™ > Jee ‘dx. { he IG ppm 1 ») je- ao fe x > 8) a -we') an Yow Be. - fave feos -(V,-v= 92 S w vax) e(n71)| m2 ~ -(V-Wy= —9G_{ WE? _ 2) Ww?) Gm w ° €(m+1)\ m2 m+2 €(mtl) m+2 vev= 9G-W"? €(m+2) ©) Q=aA [axrax = ACN we! = (weyeT = ( essen qG Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 AAG ((V,-V- ®,. The metal work function must be raised to 5,02eV to make this an ohmic contact. ‘Schottky Barrier Ohmic Contact 4.60 Metal Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Prob. 5.39 Use Inds to make an ohmic contact to GaAs. For further discussion, see Woodall, et al., J. Vac. Sci. Technol. 19. 626(1981). Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Prob. 5.40 Draw the equilibrium band diagram (a) and the band diagrams for 0.3¥ forward bias and 2.0V reverse bias (b). a)E,-F,=kT InP =0,0259eV-In =0.407eV ny 15-10" ©, =4+0.55+0.407=4.957 eV. Metal Metal Si b) Bre-——1 08 en 0.357 + Us Forward bias = 0.3 ¥ metal negative Erne Reverse bias V = ~21° metal positive Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Chapter 6 Solutions Prob. 6.1 Find Vo, Vp, and Vz. Find Vosq for Vo =-3V. 10" 3: (1.5-10° 2, 0 .02596V -In oslav aN, _ 1.6-10°°C-(10%em)?-10 5 2AT8-885-10° 5 =7.66V Vos Vr + Vo= 6.85V - 3.00V =3.85V Pro! Find I su for Ve=0V, -2V, -4V, and -6V and plot Ine versus Vo,sq for JFET in 6.1. Go=2-a-a-py mS =2-10%em-1.6-10°V-10' 2-10 5-10 = 3.2-10°S LC 24 | YarVo ,2.(Va-Vo ? 1 Vp oN 3 2.10°S-766v.| Yar O814V , 2 (Vi-O814V)F 1 166V 3 7.660 3 We can plot this vs. Vp (sat.) = 6.85 + Ve mA 6 Ve ov 4 . 3 . = i 3 i a : 3 oe ae Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Prob. 6.3 Graph Ip versus Vp for Ve=OV, -2V, -4V, and -6V for JFET in 6.1. 1,=32-10°S-7.66V-|—Y>_ + 7.66V Graph the Ip ~ Vp curve, Yo=0 Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Prob. 6.5 Graph the Ip— Vo curve, % N= 1015 2 3 4 5 Darin Volnge (7) Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Prob. 6.6 For current Ip varying linearly with Vp at low values of Vp for a JFET, (a) use the binomial expansion to rewrite Equation 6-9 Equation 6-9 may be rewritten as ()-3(%e4) Np 1, *Gy-Ve| LV, 1,=Gy-] Vp + 2.) (®) show that Ip/Vp in the linear range is the same as £m (sat), y, — Ms y 8(sa) (0) and find the value of Ve for device turn off. Vo=-Ve P Show that the width of the depletion region in Figure 6-15 is given by Equation 6-30. Use the mathematics leading to Equation 5-23b with ® for the potential difference across the depletion region contained in x,.=W. Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Prob. 6.8 Find the maximum depletion width, minimum capacitance, and threshold voltage. oS 4, =3.01-10 om = 0.301um 45-107 Ee "C-10! 4, 0,301-10%em = -4.82-10" v, = -Qit2.0, = 48210" St 4 2.0347V = 0834v oo 5345-1072 : At maximum depletion lo“ £ W, 0301-10" CC, _ 3-43-10 4,-3.47-10% t se O50,” aasd0* st asarig ISO ae 47-10% Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Prob. 6.9, Find Wr, Vos, and Vr. Sketch the C-V curve, 0.0259 in 10a 15-1 Q:Ng+W,= 1.6-10°°C-5-10" 5-0.049-10%em, ee es sae 2 =3,45-107 5, 10%em = 1.6-10°°C-5-10" 0.173V 132-107 5 G+C, 345-10 C108 Ficm?) MS Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Prob. 6.10 Plot the ly-Vq curve. sv 0 N= 1085 Dexin current (mA) o T 2 3 + $ ‘Drain Volmge (V) Prob. 6.11 Calculate the Vand find the B dose necessary to change the Vr to zero. From Figure 6-17, ®,,, =-0.1V =6.90-107 a =-0.467V 15-10° 3 85-10" £ .(0.467V) 1.6-10°°C-10" 4 610°C. 6.90 3.49-10%cm Enhancement Mode P-Channel Device To achieve V,= OV a AV,= 1.85V is required Quoron = AV; “C; = 1.85V -6.90-107 1.28-10° Q 1.28-10° 98-10" 1 Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Find Va for a positive oxide charge Qnx located x" below the metal. Repeat for an arbitrary distribution p(x’). (@) At flat band, the induced charge in the semiconductor is zero. g=- Qn 6 VEVin = Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Prob. 6.13 Draw figures for an n-type substrate. Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Sketch the band diagram and CV characteristics and calculate the dppropriate values. sev t= te fe, 10" 2, ©, =0,-, =5eV- [sora af Fa =-0.1leV 25-8.85-10" 21-10" 2 y 7 2 2-0.36eV -10-8.85-10"" = Qu Qs Gi12-@, = 081V 3 At Vr, at interface, n=10'%cm’ and p=n?/n=10%em’ ‘Deep in substrate, n=10%cm’ and p=10'Scm™ At high frequency, inversion electrons do not respond while at low frequency, they do At large negative bias, doubling the oxide thickness reduces C; by 4 At large negative bias, doubling the substrate doping does not change C, but would affect the depletion capacitances G. c Low Frequency High Frequency Vv Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Prob. 6.15 Find the oxide thickness and substrate doping. 19) Post positive sias 81, Stress e- CURVE NITVAL AND POST NEGATIVE ‘BIAS STRESS C4 CURVE Cae = 97.850 91 afiea = 0001 [STRESSED AT 200°C OSES Vien Coat Go, * AREA [NORMALIZED MOS CAPACITANCE Cay, & GATE BIAS ee EXPERIMENTAL CV CURVES SHOWING INITIAL, POST POSITIVE BLAS B-T STRESS "aND POST NEGATIVE BIAS B-T STRESS RESULTS » CAPACITANCE HAS BEEN ‘NORMALIZED TO CAPACITANCE IN STRONG ACCUMULATION = measured capacitance / area in strong accumulation 785-10? ota. sara om 9.0-10%em = 900A. 3785-10" 2 Use the normalized minimum capacitance corresponding to quasi-equilibrium Gq Oy. , . , ‘Kt where Cay, is the total series capacitance Nese een) sl Ngo 1s -ommn 9H — 698.108 Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Prol Determine the initial flatband voltage. To determine the initial (pre-stressed) flatband voltage V;., First calculate Cra from the previously determined doping density ‘Vou= -1.0V from plot in Figure 6-15 Prob. 6. Determine the field oxide charge and the mobile ion content. Vin= Oyu q 2 =-1.0V (from 6.16) where ©,,=-0.35V To determine mobile ion concentration, compare the positive and negative bias temperature flatband voltages. 3.785-10" 4 -L.0V -(-1.5V)] 1.6- Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Prob. 6.18 Calculate Vo, output conductance, transconductance, and the new Ip. neve nein ec0 Vo= SV pinch off Vou tVy = SVHV =6V <2 =0 since device is in saturation uc, a 2L (Va-Vr)? = k-(WVe-Vn)? > 7 2 10%A 6 Tosa *K(Vo-Vy)? F IOTA=K(OV-IV! > k= FO = 4-108 ke oe = 2-k-(Vg-Vq) =2-4-10% ASV = 4-10 4 For V,-V, =3V and V, = 4V device is in saturation Tyr =K+(Vq-Vz)? = 410° GV) =3.6-104A Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Prob. 6.19 Determine the initial flatband voltage. Vp Vip t2,-2 E. 395 45.107 ‘cm = Note: here use dielectric constant of oxide =o -Qx _ SLOP 1.6-107C _ Va OG as SE 1.523V . 10" AD iN cosy a) ABTV qt 15-10°S ¥; 264(285+¥) — 6 695.10%em Note: here use dielectric constant of silicon Vr=-0.223V + 0,698V + 0.140V = 0.615V With Vsus =-2.5V, depletion charge increases. Instead of bandbending of 2, now have bandbending of (26r+Vs). Qo = LOMLAOTC _ 5 toay CG, 345-10°F V,, = -1.533V+0,934V+3.103V = 2.514V 2. N, At V;, near the interface, n=N,= 10! and p= 25-10? Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 ba 3.45210 Rem? Note: Here we use dielectric constantof oxide. According to Fig. (6-17) in the textbook, for W, = 10"em? Re, OA 201 8X8. 854107120347) «5 49,19 46m WN, 1.610” x10 Note: Here we used dicletric constant of Si. =-GN Dy, 1.610" x10" «3.4910 V,= See Y peel RS Vag + Bp Sm “Ld 2+ 20467) + Soria 43v Prob. 6.2) For the MOSFET, calculate the drain current at Vg = SV, Vo = 0.1¥. Repeat for Ve Vp= SV. For V= 5V. Vy=0.1V, since V,=1V V, <(Vo-V;) —> linear region vs (SV-1V) oav-Loavy'] = 6.82-10°A = SOME 90 2-3,452-107 2ym For Vo=3V, Vp=5V, Vp(sat) = Vg- Vy =3V-1 c; [eve-¥)-Volean : FM co] um, 2pm -200:22.3.452-10°F | ev)? fowy 45-107 A Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Prob. 6.22 For the given MOSFET, calculate the linear Vz and ky, saturation Vand ky. 1. Choose Vp < Vo(sat) to ensure that Ip-V curve is in the linear regime eg,, choose Vp= 0. Q) ve=4V Vp =0.2V 1.35 mA, Q) Ve=5Vv Vo’ .62 mA, In linear regime @B) Ip=kxl(Vo- ¥rVo- V7) ‘From equation (3), inserting the values from (1) and (2) 0.35 - 10° =ky ((4- V1(0.2)] 0.62 - 10° = ky [(5 - Vr)(0.2)] 0,35/0.62 = (4- Vi) /(5- Va) 1.75 —0.35Vy=2.48 — 0.62V Vr=2.71Y, therefore, ky = 1.36 10° A/V? 2. Choose Vp >>Vp(sat) to ensure that Jp-Vp curve is in the saturation regime e.g. choose Vp=3V 4 Ver4Vv (3) Ve=5V In saturation regime © Ip= (12) ky Vo~ Vr 74 mA, 5S9mA, 0.74-10 == (4V -V,)" 2 1,59: r= Be (SV-V,) 074 av -W,y" 159 (GV-V,)" V,HL.85V,ky=3.20-108 AV? Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Prot For Problem 6.22, calculate the gate oxide thickness and the substrate doping either graphically or iteratively. use k,, from Problem 6.22 and i, =500- 136-107 = OHM. sogmc, © am 3 C= 5.42-10° = d=6,36-10%em = 636A. O)V; = Vin + 2-4, - le, Nb amtv=2-4 - 6 =2.4,- “ start from ¢, = 0.3V (note: since V, =2.71 V, it cannot be PMOS) Step 1: 2-f.6-10"C-11.8-8.85-10" = amv = 0.6y +2 VEO IOVE MLS :8.85:10" BN 03V_ 5.42-10°F N,= 6523-10 2 6.37-10" 0.0259V in = 0,395V 15-10 2.71V=0.792V+ N,=4.08-10"cm* 2.71 =0.7674 20S Ne fe N,= 422-102, > 4,= 0.385 V gives a self-consistent set of values n-channel MOSFET, N, = 4.22.10" Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Pr For the given Si MOSFET, calculate the inversion charge per unit area. Also sketch the dispersion relation for the first three sub-bands. For 2-D situation, the density of states is given by for x and y plane. .01885eV -n?= 18.85-n* meV 5.4meV, E,=170meV (Gince the Fermi probability is 1 below E, and B, is in the middle between E, and E,,) charge per unit area by simplifying the above expression: a= 4 B= 40-4 pO) 18.85-10"eV] ei BAAS iia Gene AB. [(9-1)-18.85-10°eV] 20.125 Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 & > & Es E; z le, Ey 1 en [TF > et) oe) aE ‘es ‘Ea x fees ees hy rot 25 Choose a species, energy, dose, and beam current. Vv, =-2v=4Qe , AQn - (2) = 1.08-107 Gq q dq = Any n-type ion okay, but based on projected range, use Phosphorus R,=400A > E=33keV from Appendix IX Half the dose is wasted in oxide so full dose = 2.16 x 1071 1-20s 1.6-10°C-200em" =2.16-10° 2 > 16-10% 2 > 1=3.46pA Jah aA Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Prob. 6.26 Plot the drain characteristics for an n*-polysilicon-SiOr-Si p-channel transistor with =10° 5, Q,=5:10"q, d=100A, u, =200%%, and Z=10L ato = HEE vq) - 1 Vo] Yo where Vp =—LLV and yupZCi/L = (200)(10)(8.45%1077) = 6.910 -3, Vp(sat.) = -19 ~Vp: 03 05 08 10 15 Ip (mA); 0.36 0.57 083 0.96 1.2 =p: O5 1 15 2 25 N, So most of W is in the p-side (channel). At the (zero-bias) source end, In the drain end, x,5= (22Gere) Punch-through occurs when X,5~L-%y5 = 0.654m (0.65-10“cm)? -1,609-10°°C-10"* 5 933V +, Te 2-11.8-8.85-107 5 > Vp) =23V Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Chapter 7 Solutions Prob. 7.1 Plot the doping profile. For the base diffusion, D-t=3-10°? -3600s = 10.8-10"em* 2VD-1=6.58-10%m —Vn-D-t = 5.82-10%em 6-10" dpe BUF For the emitter diffusion, D-t= 3-10 s.900s = 27.0-10%em* 2ND-1 = 1.04-10%cm — Vx-D-t = 9.21-10%em x N@E=N, oe si x =5-10" 2) -erfe( —* = ca N (em) Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Prob. 7.2 Sketch Ic versus —Vcx for the BJT and find -Veg for Ip=0.1mA. ‘elas 0 Fen) -Vee=SV for Iy-0.1mA Prob. 7.3 Plot bp across the base of a p-n-p with Welly=0.5. M, = 1.58 and M, = 0.58 from Equation 7-14 e# = 1.58 and €? = 0.606 These values may be filled in to obtain a plot such as Figure 7-7 with normalized axis. * =M,e 7 -M,e” = 1.58e° - 0.580" = 1.0 for *=0 Pe " Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 al 14 For an*+—p—n- BJT, show the current contributions, and band diagram. EQUILIBRIUM NORMAL BIAS ne Prob. 7.5 Find cand 8 for the given BJT characteristics. P,=10-n, py O5-p, Wy =0.1-L, Det He a7 1 oy 70.988 } cosh (0.1) +¥2-0.1-0.5sinh(0.1) Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Prob. 7.6 Calculate the desired values for each BJT modification. Let us assume a PNP BJT; the results are the same for NPN. a) find the change in the collector current Wo, We Ne | Re @:A-D,-P, _ a-A:D, “ny a Ww ‘NAW, If W,=0.5-W, and N,= 10-N,, then It =k -0.: a Wo, WoL, ‘Since we assume that the base and the emitter are much shorter than the diffusion length, the carrier concentration profiles vary linearly with distance in the top figure. IfN,=100-N,, and W,=0.1-W, NeWa NuWe Ng Wy 100-Ng-0.1- Wy Base carrier profile is linear so B= 1 ©) find B and Here, since we assume that the base and emitter regions are much longer than the diffusion lengths, the carrier concentrations decay exponentially with distance, as shown in the lower figure. Base carrier profile for long diode exponentially decays to 0; so B= 0 Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Prob. 7.7 Identify which gives the best diode characteristics. & ) bane op HE te Ops nl ° ws ince Vis = 0, thus Apo = 0. Notice (a) Ip = Io, Ip = 0. Since Vis (b) Veo = 0, th large, the collector is strongly that this is the narrow-base reverse biased, Apo = —Pa- diode distribution. Since Ig = Ic, Apz = —Apo = ps from Bq.(7-34). The area under 5p(z,) is zero. Ape Ape =n 0 Ww (©) Since Io = 0, Apo = Ape from (a) Vex = Von =V. Thus Ape = Ape Ee.(7-346). Connection (b) gives the best diode since the stored charge is least and the current is ‘good. Connection (a) is not a good diode since the current is small and symmetrical about V=0. Connections (c) and (d) are not good diodes because the stored charge is high. Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Prob. 7.8 Derive Ig and use the charge control approach to find B and Is Q=4 A. fapGs,)-ax, -eatyfe( a] -ofe. | 3 fone nly . + Ap;): [nce] A>. *Ap,): aon sy make use of —\=1 -x for small x Tx Be 1 (J which matches equation (7-26) a-mi( 7) Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Prob. 7.9 (@) Find I for the transistor connection ALD) APE inh We I, A ky. (b) Describe how I divides between the base and collector leads. ‘Ape=0 s01= Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Prob. 7.10 ‘Show currents and find the current transfer ratio, the emitter junction efficiency, the common base current gain, the common emitter current gain, Icgo, the base transit time, and the lifetime. = eae TM ES ert iy a as ane Back injector 8 ble} I, current transfer ratio= B= — = 2-8MA ~ 9 9899 I, 10mA 10mA itter effi =y= ——— = 0.9901 SEES” Tg, 1OmA*0.ImA common base current gain =a common emitter current gain zy 1a Toyo Te, = 1A base transit time = t, S906 =5-10°s=5ns I, 9810°A lifetime = 1, = —Qa_— = 49-107 9 45.195 = 94.5ns 7 (BY), 0.02-10-10°A fle, decreases then B decreases as do a and 8, TfTg, decteases then B decreases as do a and B. Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Prob. 7.11 Find the peak electric field, depletion capacitance, and the neutral base width narrowing. W=50V -50V- WE (1 ale ae 1 || =0.851um = 8.51-10% ; (tatiety | ~sm-ssts0%m re 8.51-10%em 7 8.51-10%cm, py ee Se ae Tt =7.74-10%em = 0.077 4m This base width narrowing causes the collector current to increase with increasing base-collector reverse bias, This effect is called the Early effect. Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Prob. 7.12 (a) Show that Iro and Iegare the saturation currents of the emitter and collector. For I= 0, equation 7-320 sree (s « 7 mates 1) Me Na Substituting in 7-32a gives I, =Izs (1-0 “@) (: v. 7 awe = “) vte(e 3) Xa oteanays weet ta For I,= 0, equation 7-32a gives Tas Substituting in 7-32b gives -I, ‘where the minus sign arises from the choice of I, defined in the reverse direction through the collector junction. (b) Find Ape with emitter forward biased and collector open and with emitter open and collector forward biased. Find Apr with collector forward biased and emitter open. 1.0 > Ape= oy-AP, Tp-O0 > Ape=ay-APe (©) Sketch 6p(x,) for each of the cases in part(b). & ap APE APC aaPE aNaPc| m0 x0 ° Wo Wo Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Prob. 7.13 (a) Show that the definitions of equation 7-40 are correct and tell what qy represents. ke @& Gd Ts Qe (ht) “ap, and similarly for the inverted mode, q,~4qAW,p, is the magnitude of the charge stored. in the base when the emitter junction is reverse biased and the collector junction is shorted EAD) say (Et) with a= Oy Pe om 7 Ap, (6) Show that equation (7-39) corresponds to equation (7-34). He = Bs (apy ap.) = Equation (7 “(@-AP, - Ap.) = Equation (7- Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Prob. 7.14 (a) Explain how the base transit time may be shorter than the hole lifetime. 5p(x,) is a steady steady state hole distribution with an average replacement time equal to the hole lifetime. ‘These replaced holes are indistinguishable and transit time is not affected by this replacement; so, the base transit time may be shorter than the hole lifetime. & a (0) Explain why the turn-on transient of a BJT is faster when the device is driven into oversaturation. 7 The turn-on transient is faster in oversaturation because the Qj=Q, condition is reached carlier in the exponential rise. Isr Design an n-p-n HBT with reasonable and base resistance. Since this is an open-ended design problem, there is no unique solution. Students should use the results of Equation 7-81 with the band gap difference of 0.42eV between GaAs and Alp;Ga.7As, to conclude that the base doping can be considerably higher than the emitter doping while maintaining a good emitter injection efficiency for electrons. It is possible to estimate the base spreading resistance with the higher doping concentration. ‘Note that Appendix IIT only gives values for light doping. Clearly, much important information will be lost in these estimates because of the sparse information the students have to work with. For example, real HBTs using AlGaAs/GaAs suffer from surface recombination problems, and scaling of these devices to small dimensions is inhibited. Some of the students will be interested enough to read current articles on and will therefore provide comments to this effect. In fact, a good answer to this problem might begin, “I wouldn’t use AIGaAS/GAAS. Instead, I would...” Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Prob. 7.16 Plot 8 for the given BIT. Relative doping, My/Pp OL A 10? 10 ‘Amplification factor, B Normalized base width, Wy/Lp Prob. 7.17 (@) What is Qs in Figure 7-4 at the d-c bias? Q.=1,-t, =107A-10°s = 10°C or Q,: = 10°A-107s= 10°C (b) Why is B different in the normal and inverted mode of a diffused BJT? The base transport factor is affected by the built-in field resulting from the doping gradient in the base. This field assists transport in the normal mode, but opposes transport in the inverted mode. Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Prob. 7.18 For the given p-n-p transistor, calculate the neutral base width Ws. ‘The built-in potential at the base-emitter junction can be given by (assuming contribution on heavily doped emitter side is half E,=0.55 eV): ef inNa 898 V qm The built-in potential at the coflector-base junction is given by: Vy Mi{nXe +inSe| al on, n, ting O55 10 10% — +n, |= 0.696 10" 1.510"° = omsovfi Next calculate the width of the base-emitter and base-collector space charge regions 26, Wem /ax, (Vous) Since N)>>Ne and the B-E junction is forward biased. Wes 21 1.88.8510* £ (04 gos - a) 1.610C10" 4, .2V 3.02-10° em .6V Wen = 1.97-10° em ‘The width of the collector-base space charge region is given by: = [25 NctNe Won 4 OY a NoNg Note: One-sided step junction cannot be assumed since for this problem Na=Ne Given: Ves=0 ; = Vii, = 0.696V. Wes = 0.426107 cm Calculate width of neutral base region Given: W = metallurgical base width = 1.5 microns Hence: =W- Wey - NeW Wap — — >| ew ste it Ba uv,-an in i =1.5-0302- 248 ~ 9 985 microns | 2 —— ws———>| | For Veq= 0.6V | w,-15-0.197- 9426 = 1 o9microns —— v—— Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Prob. 7.19 For the BJT in Problem 7.18, calculate the base transport factor and the emitter injection efficiency for Vix = 0.2V and 0.6V. First determine the electron and hole diffusion lengths. Given 1,=1, 0's . L, [D,z, = V10-107 = 10°cm. = 10m Caleulate the base transport factor, B. rorWaces, n= 1 * con For Vip-0.2V > B For V.3=0.6V + B= Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Calculate the emitter efficiency y: I, th Eth |, is the current for holes from the emitter to the base; I, is the current for electrons injected from the base to the emitter. Calculate 1,, and T,, as functions of Vig. Ig, = diffusion current injected across B-E junction by the emitter (holes for p-n-p transistor) I, = diffusion current injected across B-E junction by the base (electrons for p-n-p transistor) For the given p-r-p: (hole current) (electron current; W,, in the demoniator rather than L, since W, «L.,) At Vp=0.2V, 1os-(1.5-10% 5) 92 = 10%em?-1.609-10°C 8.251-10"A I, = 10%em? -1.609-10"°C- mY = 2.709-105A At Vy,=0.6V, sa vn 10 -(1. 10°cm? -1.609-10 "Ca SB, gD = 3.8.105A em? 19¢,1055"-(1.5-10" 35) = 10%em?-1.609-10°°C- = 1.38-10°A, 10° 25-3-107em_ From those currents, y may be calculated. y= 1th, Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Prob. 7.20 For the BIT in Problem 7.18, calculate 0, B, I, Ip, Ic, and the Gummel number. To calculate common base current gain alpha a=By Vyp=02V + a=0,995-0,9997 = 0.9947 Vp=0.6V > 1 =0.994-0,9996 = 0.9936 To calculate beta O 6 la ForVg=02 + p= 22947 — 1977 1-0.9947 For Viq=0.6 > B= 09936 = 1553 1-0.9936 To calculate currents I, Iz and Ic for Vex = 0.2 and 0.6 V the emitter current is given by: 1=ly tly, where I,, and I,, are the hole and electron currents, respectively, injected across the base-emitter junction. For Vig=0.2V > For V,,=0.6V > I,; 251-10"? + 2.709-10"A = 8.254-10"A = 8.254pA 3.8-10°A + 1.38-10°A = 3.8-10°A = 38HA ‘The collector and base currents can be determined by: I, oF Ty I, = (1-a)-1, Vap-02V > a= 0.9947 and 1,=8.254pA 0.9947-8.254pA =8.21pA. 254pA - 8.21pA = 0.044pA Van“0.6V > 00.9936 and 1,=38nA 1,.=0.9936-38A = 378A, 1,=28HA - 37.81 = 0.2 Base Gummel Number = N, -W, For V;,=0.2V, Gummel number = 10° 2;-1.09-10cm = 1.09-10? 2 For Vi,"0.6V, Gummel number = 10" ;-0.985-10%cm = 9.85-10" 2 Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Prob. 7.21 For the given BJT, calculate B in terms of B and ‘yand using the charge control model. In emitter, L;= y1502-0.0259V 10s = 1.97-10%cm = 0.1974 In base, 400 S=-0.0259V -25-10"s = 1.61-10%em = 1.61 um =D, =, 0.9992 ‘These differ because the charge control approach assumes y= 1. Prob. 7.22 For the BJT in 7.21, calculate the charge stored in the base when Vcx=OV and Ven-0.7V. Find fr ifthe base transit time is the dominant delay component. 968-107 Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Prob. 7.23 Find fr for an n-p-n with 1p=100ps in the base and C.=0.1pF and r<=100 in the collector depletion region. The emitter junction charges in 30ps, and electrons drift at vs through the Iym depletion region. ‘The total delay time for the parameters given is 1% = 100ps + eels + 30ps + 10Q-0.1pF = 141ps 1 & LIGHz Dee, Prob. 7.24 For the given npn Si BJT, find Ves for Ani An, =n,-¢ 7 =N8 > Vy = XZ int =o.695v a, With $¢ =100, high level injection is not reached until the emitter junction is biased to nearly 0.7V, Since the contact potential, V, =X" -inNt-Ns = o.81V, this isa very q ny high bias. Thus 7/rolloff due to high injection is not likely in the normal operation range. Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Chapter 8 Solutions Prob. 8.1 For the p-i-n photodiode in figure 8-7, (a) explain why the photodetector does not have gain. An electron hole pair created within W by absorption of a photon is collected as the electron is swept to the n side and the hole is swept to the p side. Since only one electron-hole pair is collected per photon, there is no gain. @) explain how making the device more sensitive to low light levels degrades speed. If W is made wider to receive more photons, the transit time to collet the electron hole pairs will be longer; so, response speed will be degraded. (c) choose a material and substrate to detect light with X=0.6ym. In order to detect the light, the band gap must be smaller than the photon energy. A 12AeV-ym _ > g7ev.. From figure 1-13, InysGeasP 0.6um grown on GaAs or ALAS ssSbp.4s grown on InP each have a band gap energy slightly below the photon energy (2eV and 1.95eV, respectively). 2=0.6um photon has an energy Prob. 8.2 Find an expression for conductance and the transit time for (ajlow and (b)high voltage. conductance = G= z ->an change in conductance = A= 4g. -An= 2-4-1, -te for low voltage, x, = = = Va for high voltage, t, Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Plot I-V for a Si solar cell with In=5nA and In-=200mA. From Equation 8-2, / vo. so te] -I,, = 0.0259V- nf 2A, +) q Th, ” 5-10” I (mA) YV (volt) Wma) 200} —200 0 -190 0.376 180 0.39 -160 0.41 109] —120 0.43 —80 0.44 —40 0.448 0 0.453 -Vivolt) 0.2 04 Prob. 8.4 Repeat problem 8.3 with a 10 series resistance. Given current I and terminal voltage V, = V+IR, the voltage across the diode is reduced by R. sc) tio) ew -1)-ty sara -02A 1 Va mA) 0 0.453 ~0.04 0.408 —0.08 0.36 0.12 0.31 0.16 0.25 —0.18 0.21 Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Prob. 85 How can several solar cells be used in a solar cell? Surface recombination could be reduced by growing a lattice-matched layer with a larger band gap on the surface to keep generated carriers from the surface. For example, AlGaAs (2eV) could be grown on GaAs (1.4eV). Additionally, a secondary cell with a ‘smaller band gap could be placed below the primary cell to absorb light which passes through. For example, Si could be utilized below GaAs. Prob. 8.6 Find the current density change for 2.5V and 2500¥. for2sv,é=¥ = —28V_ 5.0 L 5-10%cm electron velocity = v,, = 15008-5-10° £ =7.5-10° hole velocity = v,, = S00$2--5-10° 2.5-10° with light An = Ap=g,,-t= 10” 2,-107s = 10-5, Ad =q-An-vg, + q-Ap-¥q = 1.6-10°C-10" 5 -1.0-10" 8 = 0.162 for 2500V, electron velocity a hole velocity =v, =v, = with light + AJ=q- 10°°C-10" 2, -2.0-10" @ = 0.324 Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Prob. 8.7 (a) Why must a solar cell be operated in the 4" quadrant of the junction I-V characteristics? Power is only generated in the 4” a quadrant (-I+V). Power is consumed in the 1* (#1,+V) and 3" (-L-V) quadrant. Jy —_— ¥ - ve (6) What is the advantage of a quaternary alloy in fabricating LEDs for fiber optics? A quatemary alloy allows adjustment of both bandgap, and therefore wavelength, and lattice constant for epitaxial growth on convenient substrates. (c) Why is a reverse-biased GaAs p-n junction not a good photoconductor for light of ely? 4.14:10eV-s-3-10 2 E, = a? 12 ae T0"em “ Since the bandgap of GaAs is 1.43eV, the photon is not absorbed; so, GaAs is not 2 good photoconduetor for this light. Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Prob. 8.8 Find I, and Vee for the solar cell. From Equation 8-1. Ty, =Tyy = 4°A-Soy “Ly thy +) = 1.6-10°C- dem? -10" 2-2 yum+2pmn+ pum) = 0.32mA From Equation 8-3, 0.3: Ve = inft422 | = 0.0259v- inf 14 23210°A 4 Te 321070, .24V Prob. 8.9 (a) Derive the expression for the voltage at maximum power. Equation 8-2 can be written as ay I=1,[¢7-1]4, w p=L-v=1,-{e#-1|-v-1,-v ay wy f-1.{# spetgav gt I, and V,, >=, 4 ery 4k ET Ty Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 (b) Rewrite this equation in the form Inx = Cx. ve) -afs to Va) -n(is} soit) fe) substitute x = V,,,--2- and In| 2 | = in{ 100-1074 kT ik 1.5-10°A Inx=18-x (6) Find a graphical solution for Vig and the maximum power delivered. 18) 18% solution at x= 15.3 Va = 15.3-0.0259V = I= 10°A-e*-10 1396V 15.3 18 (@) Find the maximum power at this illumination. Pye = =37.9mW Prob. 8.10 For the solar cell in 8.9, plot the I-V curve and draw the maximum power rectangle. OAH V =0.0259eV «In| 1+ mp. ( ses) i I(mA)_V (mv) 0 467 a 25489 =z 50 449 > 50 75 43h 90 407 95 389 98 365 -100 o a 02 04 V (volts) Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Prob. 8.11 Calculate and plot the fill factor for the solar cell. Prob. Find the frequency and momentum of the emitted photon. hev=1L8eV — v=4.3-10"Hz 9-107 m 1-107 Prob. Find the LED emission and tell if can it be used to detect 100nm or 900nm photons. L.24eV um _ 1.246V 9 sn = 500mm E, 2.50V 100nm light has hv>E,, and will be detected 900nm light has hvF,-F. Emitted photons must have hr1 and p(v,,) 0 By, = (0+B,)-1=By, Prob. 8.16 Use Planck's radiation law to find As)/B;2 An Be Ma | B, mn, oy Estimate minimum n=p for population inversion in GaAs. F-§, =E, = 1.43eV Forn=p,F-E, =E-F = “430 =0.715eV n=p=n-e © =10°2,-ciom¥ = 19!" 1, Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Prob. 8.18 For a uniformly illuminate p”-n diode with gop in steady date, find 86%»), Ip(xx), and Ip(0). op @1,6)= AD, 2 aga? Pan 8 x w fet -1|-q-A-L,-g,, This corresponds to Equation 8-2 for n, « p, except that the component due 1,)=4-A- to generation on the p side is not included. Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Chapter 9 Solutions Prob. 9.1 Relate the sheet resistance of a diffused layer to No(x) and x; fu,(8)-N,(8)-dx assuming N, (x) > N, over most of the profile 1 a: fig (-N,()-dx Prob. 9.2 Find the aspect ratio and draw a diffusion pattern. RL L_R_10°Q 4 LR. 5 Ww WR, W = Spm and L = 250m R= Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Prob. 9.3 (a) Find the required diffusion time. Ni&x.t) Using Figure P5-2, t= 3-10*em = 1192 seconds 25-107 25-107 (b) Find how far would a Sb-doped buried layer move during this diffusion. N&WD=N, sf z (1192s) = 1 oe 7 10 = 22-10 =.11928-erfe*] — a : 10" 35 Prob. 9.4 D+ } 2y2-10" = 6 ot = 22-10? 11928 -2.75 = 0.85um_ Calculate the average resistivity ved fed af 05m 150m Pp 1=500pm From Irvin curve, N,,,=10 2 P t indoped part,p = Ry, R, inundoped 500-10%em_ 15 = 90 -2.;-0.8-10%cm = 0.00720-cm = 720 jum Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Chapter 10 Solutions Prob. 10.1 ‘Sketch the band diagram, & Forward bias Reverse bias This is called a backward diode because it conducts freely in the reverse direction (due to tunneling), but the current remains small for low voltage forward bias. Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Prob. 10.2 (4) Calculate the minimum forward bias for which tunneling occurs. a E; YUU be ‘The sizes of Exp — Bx and Ey ~ Bay determine the voltage required to align filled states opposite empty states. ‘Tunneling begins when Ex, ~ Erp = E; Which occurs at a forward bias of 0.3V. (b) Calculate the maximum forward bias for which tunneling occurs. Tunneling ends when Eq, ~ Eyp = E; which occurs at a forward bias of 03V+0.1V+0.1V =03V (c) Sketch the I-V curve for the diode. Band to band tunneling is maximized when Ev, — Erp = 0.1 and is essentially zero when Em — Exp = 0.2V, 1 Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Prob. 10.3 (@) Relate cp/at where p is the space charge density 6 and < neglecting recombination. I=0-€=-0-VW. Vid =-5-V-V a vy =-Bovy a (6) Show the space charge p(t) decays exponentially with time constant 7s solving differential in (a) gives Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Prob. 10.4 Find the criteria for negative conductivity in terms of mobilities and electron concentrations in the T and L bands of GaAs. Jeo E= ae, omy tH, m= G[by ony thy “(My ap E a 4 fr ge TM arto mae fo 4) Bean =e Ty,» th si dn, dy, dy (ir, ) Ge te eet el, © <0 when af et ee aE Hep tH, my, e-(A-B)-Se 46 jc np A+n, -B day, BOB -A+n, -B Bis less than A since w, «yp. Thus = must be negative, That is the conductivity is negative only while electrons are being transferred from. the lower lying’ valley into the upper L valley. Prob. 10.5 (@) Find the minimum electron concentration and time between current pulses. 102, 10%, = 2105 L 5-10%em = (b) Estimate the d-c power dissipated per unit volume. P=I-V=(@-ny-¥y-A)-E-L) = qeMy-VgE = 1.6-10°C-2-108 2;-2-107 2.3.10? Zt = 2-10" & Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Prob. 10.6 (@) Calculate the ratio of the density of states in the T and L conduction bands of GaAs. 2 je F so Ne (md es} _ Nr (ma) oor (®) Assuming a Boltzmann distribution, find the ratio of electron concentrations in these bands at 300K. osoev Bi. = 23.5. FHT = 2.2.10" ny ‘The upper L valley is essentially empty at equilibrium at 300K. (c) Find the equivalent temperature of an electron in the T minima. px 2:02592V 40.300 = =3782K 8.62-107 & Prob. 10.7 Explain why two separate BJTs cannot be connected to make a p-n-p-n switch. The p-n-p-n switching action depends on injection of carriers across both base regions and collection into the base regions of the opposite transistor. For example, transistor action in the p-n-p feeds majority carrier holes to the base of the n-p-n. This cannot occur with separate transistors; so, the p-n-p-n switching effect does not occur, Prob. 10.8 How does gate bias provide switching in an SCR? Switching in the SCR of figure 10-13 ocours when holes are supplied to p2 at a sufficient rate. Although jy is forward biased wit io, transistor action does not begin until hole injection by ig reaches the critical value for switching. Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Prob. 10.9 (a) Sketch the equi conducting states. rium band diagram in the forward-blocking and forward- (®) Sketch the excess minority carrier distribution in regions n; and p2 in the forward- conducting state. A mM om ° # || 4 : ree AY m pe (b) Each equivalent transistor is in saturation. Thus the minority carrier distribution in each base resembles Fig. 7-14b. Forward-conducting Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Prob. 10.10 Draw diagrams for the forward-blocking and forward-conducting states of a p-n-p-n. Forward Blocking State >> tke flow © generation ESSE electron tow @ recombination In the simplified diagram above, we neglect minority carrier transport across each base region. Electrons generated thermally in and about jz recombine in n) and jj with injected holes. Similarly, generated holes feed recombination with injected electrons in pz and js. In absence of transistor action, current is limited to essentially the reverse saturation current of jz. In the figure below, we neglect generation compared with transport due to transistor action. Recombination takes place in m and pp, but many injected carriers are transported through the device by transistor action. More complete diagrams may be found in the book by Gentry et al., p 72 and 76 (see chapter 10 reading list). Forward Conducting State i TH SOHO CLA Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Prob. 10.11 Include avalanche in jz in the coupled transistor model. Referring to figure 10-11, jgy = 4) 1M, Hoy “My deg = 0 *i-M, “om "My igtig, (a, -M, +0, *M,) Too "My “Tou ‘Ma Ten $M Hema *M, ‘The current becomes large as a, -M, ta, -M, approaches unity. Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Chapter 1 Self Quiz Question 1 (a) Label the following planes using the correct notation for a cubic lattice of unit cell edge length a (shown within the unit cell). z z 4 4 4 +y }—> y dt ain * oo) 10) (b) Write out all of the equivalent (100) directions using the correct notation, [1.0 0}, [0 1 0}, [00 1}, [1 00}, (01 0}, (00 1] (©) On the two following sets of axes, (1) sketch the [011] direction and (2) a (111) plane (fora cubic system with primitive vectors a, b and c.). © © q@) @) Address:Cra 77 No 34 - 64 - Medellin - co (Colombia)Name:Jose Giraldo Email:tote718@hotmail.com Work Phone:(574) 414 16 01 Question 2 (a) Which of the following three unit cells are primitive cells for the two-dimensional lattice. Which is the correct combination below. and 3>/ 1 and 3 / 2and3 / 1,2 and 3 1 and 2 each contain a single atom and may be repeated to form the lattice 3 may be repeated to form the lattice but contains two atoms G ° 0 unit cell 2 ‘unit cel T & - unit cell 3 oO ° oO oO (b) The following planes (shown within the first quadrant for 0 <.xy,z

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