Solutions Manual

9.8. Show that placing the source in an evaporation system at the inside surface of a
sphere facing the center, with the wafers also at the inside surface of the sphere
facing the center, leads to uniform deposition wafer-to-wafer assuming a small
planar surface source.

Answer:
R evap
From Equation 9.23, v = cosθ i ⋅ cosθ k for a small area planar source, where
πNr2
θ i is the angle between the surface normal of small area i (the source) and the line
between areas i and k, while θ k is the angle between the surface normal of small
area k (the wafer) and the line between areas i and k. Therefore, by the figure
below and these definitions: for a wafer at any location around the sphere: θ i =
θ k (isosceles triangle) and cos θ i = cos θ k = r/2ro.

Wafer

ro
θk
.
r
ro
θi

Source

R evap R evap r r R evap

Therefore v= 2 cosθ i ⋅ cosθ k = ⋅ = . Thus the
πNr πNr 2ro 2ro πN 4ro 2
2

deposition rate will depend only on the evaporation rate, Revap, assumed constant,
and on the radius of the sphere, another constant, giving constant deposition on each
wafer around the sphere. (Or at least constant deposition on the center of each
wafer.)

SILICON VLSI TECHNOLOGY 126 © 2000 by Prentice Hall

Fundamentals, Practice and Modeling Upper Saddle River, NJ.
By Plummer, Deal and Griffin