Solutions Manual

9.9. Calculate the deposition rate for a small planar surface evaporation source in
which θ i = 30˚, θ k = 45˚, the evaporation rate is 1 x 10-3 gm sec-1, the distance
from the source to the wafer is 5 cm, and the density of the material being
deposited equal 5 gm cm-3.

Answer:

By Eqn. 9.23, the deposition rate, v, is:

R evap
v= 2 cosθ i ⋅ cosθ k
πNr

Plugging in the numbers into this equation gives:

1x10-3 gm sec − 1
v= 2 −3
cos30o cos45o
π(5cm) 5 gm cm
3 1
= 2.6 x 10− 6 cm sec − 1 ∗
2 2
= 1.6 x 10− 6 cm sec − 1 = 0.94 μm min −1

9.10. The new deposition engineer installed the company’s new evaporation system.
Hoping to get uniform depositions on all the wafers mounted on the inside of
the spherical wafer holder, he installed the evaporation source crucible at the
center of the sphere. If the evaporation source behaves like an ideal small
area planar source, what will be the deposition rate as a function of θ, as
defined below? (let the evaporation rate equal 3x10-3 gm sec-1, radius ro equal
10 cm, and the density of the material being deposited equal 10 gm cm-3).
Sketch a plot of d versus θ for θ from -90˚ to +90˚, and specify the deposition
rate at a point directly facing the planar source (at θ = 0˚) and at θ = 90˚.
Will uniform depositions result?

Wafer

ro
θ
.
Source
Answer:

SILICON VLSI TECHNOLOGY 127 © 2000 by Prentice Hall

Fundamentals, Practice and Modeling Upper Saddle River, NJ.
By Plummer, Deal and Griffin