PD - 94270

SMPS MOSFET
IRFB260N
HEXFET® Power MOSFET
Applications VDSS RDS(on) max ID
l High frequency DC-DC converters
200V 0.040Ω 56A

Benefits
l Low Gate-to-Drain Charge to Reduce Switching Losses
l Fully Characterized Capacitance Including Effective COSS to
Simplify Design, (See App. Note AN1001)
l Fully Characterized Avalanche Voltage and Current

TO-220AB

Absolute Maximum Ratings

Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 56
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 40 A
IDM Pulsed Drain Current  220
PD @TC = 25°C Power Dissipation 380 W
Linear Derating Factor 2.5 W/°C
VGS Gate-to-Source Voltage ± 20 V
dv/dt Peak Diode Recovery dv/dt ƒ 10 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torqe, 6-32 or M3 screw 10 lbf•in (1.1N•m)

Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 0.40
RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
RθJA Junction-to-Ambient ––– 62

Notes  through … are on page 8

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IRFB260N
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 200 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.26 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.040 Ω VGS = 10V, ID = 34A „
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
––– ––– 25 VDS = 200V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– ––– 250 VDS = 160V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
IGSS nA
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V

Dynamic @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 29 ––– ––– S VDS = 50V, ID = 34A
Qg Total Gate Charge ––– 150 220 ID = 34A
Qgs Gate-to-Source Charge ––– 24 37 nC VDS = 160V
Qgd Gate-to-Drain ("Miller") Charge ––– 67 100 VGS = 10V „
td(on) Turn-On Delay Time ––– 17 ––– VDD = 100V
tr Rise Time ––– 64 ––– ns ID = 34A
td(off) Turn-Off Delay Time ––– 52 ––– RG = 1.8Ω
tf Fall Time ––– 50 ––– VGS = 10V „
Ciss Input Capacitance ––– 4220 ––– VGS = 0V
Coss Output Capacitance ––– 580 ––– VDS = 25V
Crss Reverse Transfer Capacitance ––– 140 ––– pF ƒ = 1.0MHz
Coss Output Capacitance ––– 5080 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss Output Capacitance ––– 230 ––– VGS = 0V, VDS = 160V, ƒ = 1.0MHz
Coss eff. Effective Output Capacitance ––– 500 ––– VGS = 0V, VDS = 0V to 160V …

Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy‚ ––– 450 mJ
IAR Avalanche Current ––– 34 A
EAR Repetitive Avalanche Energy ––– 38 mJ

Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
D
IS Continuous Source Current MOSFET symbol
––– ––– 56
(Body Diode) showing the
A
ISM Pulsed Source Current integral reverse G

––– ––– 220

(Body Diode)  p-n junction diode. S

VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 34A, VGS = 0V „
trr Reverse Recovery Time ––– 240 360 ns TJ = 25°C, IF = 34A
Qrr Reverse RecoveryCharge ––– 2.1 3.2 µC di/dt = 100A/µs „
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

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 IRFB260N
1000 1000
VGS VGS
TOP 15V TOP 15V
10V 10V
8.0V 8.0V
ID , Drain-to-Source Current (A)

ID , Drain-to-Source Current (A)

7.0V 7.0V
100 6.0V 6.0V
100
5.5V 5.5V
5.0V 5.0V
BOTTOM 4.5V BOTTOM 4.5V

4.5V
10 10

4.5V

1 1

20µs PULSE WIDTH 20µs PULSE WIDTH

Tj = 25°C Tj = 175°C
0.1 0.1
0.1 1 10 100 0.1 1 10 100
VDS, Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

1000.00

3.5
I D = 56A

3.0
ID , Drain-to-Source Current (Α )

T J = 175°C

2.5
R DS(on) , Drain-to-Source On Resistance

100.00
(Normalized)

2.0

1.5
TJ = 25°C
10.00
1.0

0.5
VDS = 15V
20µs PULSE WIDTH 
V GS = 10V
1.00 0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
3.0 5.0 7.0 9.0 11.0 13.0 15.0
TJ , Junction Temperature ( °C)
VGS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature
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IRFB260N


100000 12
VGS = 0V, f = 1 MHZ 
ID = 34A
VDS = 160V
Ciss = Cgs + Cgd , Cds SHORTED VDS = 100V
Crss = Cgd VDS = 40V
10
10000 Coss = Cds + Cgd
C, Capacitance(pF)

Ciss

VGS, Gate-to-Source Voltage (V)

7

1000

Coss 5

100 Crss
2

10
0
1 10 100 1000 0 30 60 90 120 150

QG , Total Gate Charge (nC)

VDS , Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage Gate-to-Source Voltage

1000.00 1000
OPERATION IN THIS AREA
LIMITED BY R DS (on)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)

100.00
100
TJ = 175°C

10.00
100µsec

10
T J = 25°C 1msec
1.00
Tc = 25°C
Tj = 175°C
VGS = 0V Single Pulse 10msec
0.10 1
0.0 0.5 1.0 1.5 2.0 1 10 100 1000
VSD , Source-toDrain Voltage (V) VDS , Drain-toSource Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage
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 IRFB260N
60
RD
VDS

VGS
50 D.U.T.
RG
+
-VDD
40
ID , Drain Current (A)

10V
Pulse Width ≤ 1 µs
30
Duty Factor ≤ 0.1 %

20
Fig 10a. Switching Time Test Circuit

VDS
10
90%

0
25 50 75 100 125 150 175

TC , Case Temperature ( °C)

10%
VGS
Fig 9. Maximum Drain Current Vs. td(on) tr t d(off) tf
Case Temperature
Fig 10b. Switching Time Waveforms

1
(Z thJC)

D = 0.50

0.1 0.20

0.10
Thermal Response


0.05

0.02
0.01  SINGLE PULSE
(THERMAL RESPONSE) P DM

0.01
t1

t2

0.001
 Notes:
1. Duty factor D =
2. Peak T
t1/ t

J = P DM x Z thJC
2
+T C

0.00001 0.0001 0.001 0.01 0.1 1

t 1, Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRFB260N


1 5V 850
ID
TOP 14A
24A
L D R IV E R 680
VDS BOTTOM 34A

E AS , Single Pulse Avalanche Energy (mJ)

RG D .U .T +
V 510
- DD
IA S A
20V
tp 0 .0 1 Ω

340
Fig 12a. Unclamped Inductive Test Circuit

170
V (B R )D SS
tp

0
25 50 75 100 125 150 175

Starting T , Junction
J Temperature ( °C)

Fig 12c. Maximum Avalanche Energy

IAS Vs. Drain Current

Fig 12b. Unclamped Inductive Waveforms

Current Regulator
Same Type as D.U.T.

QG
50KΩ
.2µF
10 V 12V
.3µF
QGS QGD +
V
D.U.T. - DS

VG VGS

3mA

IG ID
Charge Current Sampling Resistors

Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit

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 IRFB260N
Peak Diode Recovery dv/dt Test Circuit

+ Circuit Layout Considerations

D.U.T
• Low Stray Inductance
• Ground Plane
ƒ
• Low Leakage Inductance
Current Transformer
-

+
‚
„
- +
-


RG • dv/dt controlled by RG +
• Driver same type as D.U.T. VDD
-
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test

Driver Gate Drive

P.W.
Period D=
P.W. Period

VGS=10V *

D.U.T. ISD Waveform

Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
VDD

Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent

Ripple ≤ 5% ISD

* VGS = 5V for Logic Level Devices

Fig 14. For N-Channel HEXFET® Power MOSFETs

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IRFB260N
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
10 .5 4 (.4 15 ) 3.7 8 (.14 9) -B -
2 .8 7 (.1 13 ) 10 .2 9 (.4 05 ) 3.5 4 (.13 9) 4 .69 (.1 85 )
2 .6 2 (.1 03 ) 4 .20 (.1 65 )
-A- 1.3 2 (.05 2)
1.2 2 (.04 8)
6.47 (.255 )
6.10 (.240 )
4
15 .2 4 (.6 00 )
14 .8 4 (.5 84 )
1.1 5 (.0 4 5) L E A D A S S IG N M E N T S
M IN 1 - G A TE
1 2 3 2 - D R A IN
3 - SOURCE
4 - D R A IN
14 .0 9 (.5 55 )
13 .4 7 (.5 30 ) 4 .06 (.160 )
3 .55 (.140 )

0.93 (.0 37 ) 0.55 (.02 2)

3X 3X
0.69 (.0 27 ) 0.46 (.01 8)
1.40 (.0 5 5)
3X
1.15 (.0 4 5) 0 .3 6 (.0 1 4) M B A M
2.9 2 (.11 5)
2.6 4 (.10 4)
2 .5 4 (.1 00)
2X
N OT E S :
1 D IME N S IO N IN G & TO L E R A N C IN G P E R A NS I Y 14 .5 M , 19 82 . 3 O U TL IN E C O N F O R M S TO J E D E C O U T LIN E T O -22 0 A B.
2 C O N T R O LL ING D IM E N S IO N : IN C H 4 HE A T S IN K & LE A D M E A S UR E M EN T S D O NO T IN CL U D E B U R R S .

TO-220AB Part Marking Information

EXAMPLE: T HIS IS AN IRF1010 PART NUMBER
LOT CODE 1789 INTERNAT IONAL
ASS EMBLED ON WW 19, 1997 RECT IF IER
LOGO
IN T HE AS SEMBLY LINE "C"
DATE CODE
YEAR 7 = 1997
ASS EMBLY
LOT CODE WEEK 19
LINE C

Notes:
 Repetitive rating; pulse width limited by „ Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. … Coss eff. is a fixed capacitance that gives the same charging
‚ Starting TJ = 25°C, L = 0.78mH time as Coss while VDS is rising from 0 to 80% VDSS
R G = 25Ω, IAS = 34A.
ƒ ISD ≤ 34, di/dt ≤ 480A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.08/01
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