2SK3523-01R 200304

FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET

Super FAP-G Series Outline Drawings [mm]
TO-3PF
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof

Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters

Maximum ratings and characteristicAbsolute maximum ratings

(Tc=25°C unless otherwise specified)
Item Symbol Ratings Unit
Drain-source voltage V DS 500 V
VDSX *5 500 V
Continuous drain current ID ±25 A Equivalent circuit schematic
Pulsed drain current ID(puls] ±100 A
Gate-source voltage VGS ±30 V Drain(D)
Repetitive or non-repetitive IAR *2 25 A
Maximum Avalanche Energy EAS *1 336.5 mJ
Maximum Drain-Source dV/dt dVDS/dt *4 20 kV/µs
Peak Diode Recovery dV/dt dV/dt *3 5 kV/µs
Gate(G)
Max. power dissipation PD Ta=25°C 3.125 W
Tc=25°C 160 Source(S)
Operating and storage Tch +150 °C
temperature range Tstg -55 to +150 °C
Isolation Voltage VISO *6 2 kVrms
*1 L=987µH, Vcc=50V, See to Avalanche Energy Graph *2 Tch < =150°C
<
= -ID, -di/dt=50A/µs, Vcc <
*3 IF< = BVDSS, Tch <
= 150°C *4 VDS = 500V *5 VGS=-30V *6 t=60sec f=60Hz
Electrical characteristics (Tc =25°C unless otherwise specified)
Item Symbol Test Conditions Min. Typ. Max. Units
Drain-source breakdown voltaget V(BR)DSS ID= 250µA VGS=0V 500 V
Gate threshold voltage VGS(th) ID= 250µA VDS=VGS 3.0 5.0 V
VDS=500V VGS=0V Tch=25°C 25 µA
Zero gate voltage drain current IDSS
VDS=400V VGS=0V Tch=125°C 250
Gate-source leakage current IGSS VGS=±30V VDS=0V 10 100 nA
Drain-source on-state resistance RDS(on) ID=10.5A VGS=10V 0.20 0.26 Ω
Forward transcondutance gfs ID=10.5A VDS=25V 11 22 S
Input capacitance Ciss VDS =25V 2280 3420 pF
Output capacitance Coss VGS=0V 320 480
Reverse transfer capacitance Crss f=1MHz 16 24
Turn-on time ton td(on) VCC=300V ID=10.5A 27 41 ns
tr VGS=10V 37 56
Turn-off time toff td(off) RGS=10 Ω 75 113
tf 11 17
Total Gate Charge QG V CC =300V 54 81 nC
Gate-Source Charge QGS ID=21A 16 24
Gate-Drain Charge QGD VGS=10V 20 30
Avalanche capability IAV L=987µH Tch=25°C 25 A
Diode forward on-voltage V SD IF=21A VGS=0V Tch=25°C 0.98 1.50 V
Reverse recovery time t rr IF=21A VGS=0V 0.7 µs
Reverse recovery charge Qrr -di/dt=100A/µs Tch=25°C 10.0 µC
Thermalcharacteristics
Item Symbol Test Conditions Min. Typ. Max. Units
Rth(ch-c) channel to case 0.781 °C/W
Thermal resistance
Rth(ch-a) channel to ambient 40.0 °C/W
1
2SK3523-01R FUJI POWER MOSFET
Characteristics

Allowable Power Dissipation Typical Output Characteristics

PD=f(Tc) ID=f(VDS):80µs Pulse test,Tch=25°C
250 55
20V
50 10V
8V
45
200 7.0V
40

35
150

ID [A]
30
PD [W]

6.5V
25
100
20

15
6.0V
50 10

5 VGS=5.5V

0 0
0 25 50 75 100 125 150 0 2 4 6 8 10 12 14 16 18 20
VDS [V]
Tc [°C]

Typical Transfer Characteristic Typical Transconductance

ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C
100 100

10 10
ID[A]

gfs [S]

1 1

0.1 0.1
0 1 2 3 4 5 6 7 8 9 10 0.1 1 10 100
VGS[V] ID [A]

Typical Drain-Source on-state Resistance Drain-Source On-state Resistance

RDS(on)=f(ID):80µs Pulse test, Tch=25°C RDS(on)=f(Tch):ID=10.5A,VGS=10V
0.6 0.7

VGS=
0.5 5.5V 0.6
6.0V 6.5V

7.0V 0.5
RDS(on) [ Ω ]

0.4
RDS(on) [ Ω ]

8V
0.4
10V
0.3
20V max.
0.3

0.2
0.2 typ.

0.1
0.1

0.0 0.0
0 5 10 15 20 25 30 35 40 45 50 55 -50 -25 0 25 50 75 100 125 150
ID [A] Tch [°C]

2
2SK3523-01R FUJI POWER MOSFET

Gate Threshold Voltage vs. Tch Typical Gate Charge Characteristics

VGS(th)=f(Tch):VDS=VGS,ID=250µA VGS=f(Qg):ID=21A, Tch=25°C
7.0 24
6.5 22 Vcc= 250V
6.0
20
5.5
18
5.0 max. Vcc= 100V
Vcc= 400V
VGS(th) [V]

16
4.5
4.0 14

VGS [V]
3.5 12
3.0 10
2.5 min.
8
2.0
6
1.5
4
1.0
0.5 2

0.0 0
-50 -25 0 25 50 75 100 125 150 0 20 40 60 80 100 120
Tch [°C] Qg [nC]

Typical Capacitance Typical Forward Characteristics of Reverse Diode

1 C=f(VDS):VGS=0V,f=1MHz 100
IF=f(VSD):80µs Pulse test,Tch=25°C
10

Ciss

0
10
10
IF [A]
C [nF]

10
-1 Coss

1
-2 Crss
10

-3
10 0.1
-1 0 1 2 3
10 10 10 10 10 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
VDS [V] VSD [V]

Typical Switching Characteristics vs. ID Maximum Avalanche Energy vs. starting Tch
t=f(ID):Vcc=300V, VGS=10V, RG=10Ω EAS=f(starting Tch):Vcc=50V
3
10 1000

800 IAS=10A

2 td(off)
10
600
EAS [mJ]

td(on) IAS=15A
t [ns]

400
1
10 tr tf
IAS=25A

200

0
10 0
-1 0 1 2
10 10 10 10 0 25 50 75 100 125 150

ID [A] starting Tch [°C]

3
2SK3523-01R FUJI POWER MOSFET

Maximum Avalanche Current Pulsewidth

IAV=f(tAV):starting Tch=25°C,Vcc=50V
2
10
Avalanche Current I AV [A]

Single Pulse
1
10

0
10

-1
10

-2
10
-8 -7 -6 -5 -4 -3 -2
10 10 10 10 10 10 10
tAV [sec]

Maximum Transient Thermal Impedance

1
Zth(ch-c)=f(t):D=0
10

0
10
Zth(ch-c) [°C/W]

-1
10

-2
10

-3
10
-6 -5 -4 -3 -2 -1 0
10 10 10 10 10 10 10
t [sec]

http://www.fujielectric.co.jp/denshi/scd/