RMN3N5R0DF

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

ϰ 100% Rg & UIS Test D BVDSS 30V

ϰ Simple Drive Requirement RDS(ON) 5mӨ
ϰ Low On-resistance
ϰ RoHS Compliant & Halogen-Free G D
D
S D
D
Description
RMN3N5R0DF is from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer S
with an extreme efficient device for use in a wide range of power S
applications. S
G
The PMPAK 5x6 package is special for DC-DC converters PMPAK 5x6
application and the foot print is compatible with SO-8 with backside
heat sink and lower profile.

o
Absolute Maximum Ratings@Tj=25 C(unless otherwise specified)
Symbol Parameter . Rating Units
VDS Drain-Source Voltage 30 V
VGS Gate-Source Voltage +20 V
ID@TC=25к Drain Current, VGS @ 10V 61 A
3
ID@TA=25к Drain Current, VGS @ 10V 24.7 A
3
ID@TA=70к Drain Current, VGS @ 10V 19.7 A
1
IDM Pulsed Drain Current 200 A
PD@TC=25к Total Power Dissipation 31.2 W
3
PD@TA=25к Total Power Dissipation 5 W
4
EAS Single Pulse Avalanche Energy 61.2 mJ
TSTG Storage Temperature Range -55 to 150 к
TJ Operating Junction Temperature Range -55 to 150 к

Thermal Data
Symbol Parameter Value Unit
Rthj-c Maximum Thermal Resistance, Junction-case 4 к/W
3
Rthj-a Maximum Thermal Resistance, Junction-ambient 25 к/W
2019-12/99
REV:O
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=1mA 30 - - V
2
RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=19A - - 5 mӨ
VGS=4.5V, ID=16A - - 8 mӨ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1.3 - 2.3 V
gfs Forward Transconductance VDS=5V, ID=19A - 69 - S
IDSS Drain-Source Leakage Current VDS=24V, VGS=0V - - 10 uA
IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA
Qg Total Gate Charge ID=16A - 22 35.2 nC
Qgs Gate-Source Charge VDS=15V - 7 - nC
Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 10.5 - nC
td(on) Turn-on Delay Time VDS=15V - 11 - ns
tr Rise Time ID=19A - 59 - ns
td(off) Turn-off Delay Time RG=3.3Ө - 29 - ns
tf Fall Time VGS=10V - 13 - ns
Ciss Input Capacitance VGS=0V - 1900 3040 pF
Coss Output Capacitance VDS=15V - 305 - pF
Crss Reverse Transfer Capacitance f=1.0MHz
1 - 245 - pF
Rg Gate Resistance f=1.0MHz - 1.5 3 Ө

Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
2
VSD Forward On Voltage IS=19A, VGS=0V - - 1.2 V
trr Reverse Recovery Time IS=20A, VGS=0V, - 15 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 6 - nC

Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
2 o
3.Surface mounted on 1 in copper pad of FR4 board, t <10sec ; 60 C/W at steady state.
o
4.Starting Tj=25 C , VDD=30V , L=0.1mH , RG=25Ө, VGS=10V

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 RATING AND CHARACTERISTICS CURVES (RMN3N5R0DF)
200 140

T C =25 o C 10V T C = 150 o C 10V

7.0V 120 7.0V
160 6.0V 6.0V
5.0V 5.0V
ID , Drain Current (A)

ID , Drain Current (A)

100

120 V G = 4.0V
80

80
V G = 4.0V 60

40

40

20

0 0
0 2 4 6 8 0 1 2 3 4 5 6

V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

6 2.0

I D = 16 A I D =19A
T C =25 o C V G =10V

5.2 1.6
Normalized RDS(ON)
RDS(ON) (mӨ)

4.4 1.2

.
3.6 0.8

2.8
0.4
2 4 6 8 10 -100 -50 0 50 100 150

V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C)

Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance

v.s. Junction Temperature
20 2

I D = 250uA

16 1.6
Normalized VGS(th)
IS(A)

12 1.2
T j =150 o C T j =25 o C

8 0.8

4 0.4

0 0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 -100 -50 0 50 100 150

V SD , Source-to-Drain Voltage (V) T j ,Junction Temperature ( o C)

Fig 5. Forward Characteristic of Fig 6. Transfer Characteristics

Reverse Diode

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 RATING AND CHARACTERISTICS CURVES (RMN3N5R0DF)

10 3200
f

I D = 16 A
V DS =15V
VGS , Gate to Source Voltage (V)

2400

C (pF)
6
C iss
1600

800
2

C oss
C rss
0 0
0 10 20 30 40 50 1 5 9 13 17 21 25 29 33 37

Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

1000 1

Duty factor=0.5
Normalized Thermal Response (Rthjc)

Operation in this
100 area limited by
RDS(ON)
0.2

10us
ID (A)

0.1

.
10 0.1

0.05 PDM
100us t
T
1
0.02
Duty factor = t/T
1ms 0.01 Peak Tj = PDM x Rthjc + T c
T C =25 o C 10ms Single Pulse
Single Pulse DC
0.1 0.01
0.01 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1

V DS , Drain-to-Source Voltage (V) t , Pulse Width (s)

Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

100 100

V DS =5V

80 80
ID , Drain Current (A)
ID , Drain Current (A)

60 60

40 40

T j =150 o C

20
T j =25 o C
20

T j = -55 o C
0 0
25 50 75 100 125 150 0 1 2 3 4 5 6
o
T C , Case Temperature ( C) V GS , Gate-to-Source Voltage (V)

Fig 11. Drain Current v.s. Case Fig 6. Gate Threshold Voltage v.s.
Temperature Junction Temperature

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 RATING AND CHARACTERISTICS CURVES (RMN3N5R0DF)

40 50

o
T j =25 C

40

PD, Power Dissipation(W)

30
RDS(ON) (mӨ)

30

20

20

10

10

4.5V
V GS =10V
0 0
0 20 40 60 80 100 0 50 100 150

I D , Drain Current (A) T C , Case Temperature( C)

o

Fig 13. Typ. Drain-Source on State Fig 14. Total Power Dissipation
Resistance

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 MARKING INFORMATION

Part Number

3N5R0

YWWSSS

Date Code (YWWSSS)

YΚLast Digit Of The Year
WWΚWeek
SSSΚSequence

Package Outline : PMPAK 5x6

˗˄
˗˅
˛

SYMBOLS Millimeters
MIN NOM MAX
˘˅
˔ 0.90 1.10 1.30
˘˄ ˘ b 0.33 0.41 0.51
C 0.15 Ё Ё
˞ D1 4.80 4.90 5.10
D2 Ё Ё 4.40
˟ ˄
E 5.80 6.00 6.20
˸ E1 (Ref.) 5.60 5.75 5.90
˵ ˟˄
E2 (Ref.) 3.30 3.55 3.80
e 1.27 BSC
˕˔˖˞˦˜˗˘ʳ˩˜˘˪
H Ё Ё 0.90
ө K (Ref.) 0.70 Ё Ё
M 0.35 0.55 0.75
˟˄ Ё Ё 0.20
ө 0° Ё 12°
˔
.
˖
1.All Dimension Are In Millimeters.
˅ˁ˗˼̀˸́̆˼̂́ʳ˗̂˸̆ʳˡ̂̇ʳ˜́˶˿̈˷˸ʳˠ̂˿˷ʳˣ̅̂̇̅̈̆˼̂́̆ˁ

" " " "" " "

PMPAK5X6 FOOTPRINTΚ

5.1mm

4.2mm

1.2mm
.

0.8mm

Pin1
0.51mm
1.27mm

" " " "" " "

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specification herein, to make corrections, modifications, enhancements or other
changes. Rectron Inc or anyone on its behalf assumes no responsibility or liabi-
lity for any errors or inaccuracies. Data sheet specifications and its information
contained are intended to provide a product description only. "Typical" paramet-
ers which may be included on RECTRON data sheets and/ or specifications ca-
n and do vary in different applications and actual performance may vary over ti-
me. Rectron Inc does not assume any liability arising out of the application or
use of any product or circuit.

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