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  • Tenp-Tentsio Bihurketa Julen Madrazo

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    julen madrazo
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    1. The document presents the theoretical and simulated voltage and current values for a circuit consisting of a transistor, resistors, and voltage source at different temperatures. 2. Tables show the emitter current and collector voltage values theoretically calculated and those obtained through simulation for the circuit at temperatures ranging from 60 to 80 degrees Celsius. 3. The document provides details on the circuit components, designers, and specifications for a report on the temperature-voltage conversion circuit.

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    Tenp-tentsio bihurketa Julen Madrazo

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    1. The document presents the theoretical and simulated voltage and current values for a circuit consisting of a transistor, resistors, and voltage source at different temperatures. 2. Tables show the emitter current and collector voltage values theoretically calculated and those obtained through simulation for the circuit at temperatures ranging from 60 to 80 degrees Celsius. 3. The document provides details on the circuit components, designers, and specifications for a report on the temperature-voltage conversion circuit.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
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    2 views1 page

    Tenp-Tentsio Bihurketa Julen Madrazo

    Uploaded by

    julen madrazo
    1. The document presents the theoretical and simulated voltage and current values for a circuit consisting of a transistor, resistors, and voltage source at different temperatures. 2. Tables show the emitter current and collector voltage values theoretically calculated and those obtained through simulation for the circuit at temperatures ranging from 60 to 80 degrees Celsius. 3. The document provides details on the circuit components, designers, and specifications for a report on the temperature-voltage conversion circuit.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
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    of 1

    0 1 2 3 4 5 6 7 8

    A A

    B B

    V1
    9V

    R2
    C R1 C
    1.0kΩ
    4.7kΩ V: 4.02 V
    V(p-p): 0 V
    V(rms): 0 V
    V(dc): 4.02 V Balio simulatuak
    V(freq): --
    Balio teorikoak:
    T=60°C T=60°C
    V IE=0.00253A; VC=6.47V IE=0.00254A; VC=6.48V
    D PR1 T=65°C T=65°C D

    IE=0.00307A; VC=5.93V IE=0.00306A; VC=5.95V


    Q1 I: 5.01 mA
    I(p-p): 0 A T=70°C T=70°C
    2N3904 IE=0.00365A; VC=5.37V
    I(rms): 0 A IE=0.00368A; VC=5.32V
    Rtherm I(dc): 5.01 mA T=75°C T=75°C
    I(freq): -- IE=0.00435A; VC=4.65A IE=0.0043A; VC=4.73A
    2.490kΩ A
    PR2 T=80°C T=80°C
    E E
    IE=0.0051A; VC=3.9V IE=0.00501A; VC=4.02V
    R3
    470Ω

    F F
    National Instruments
    801-111 Peter Street
    Toronto, ON M5V 2H1
    (416) 977-5550

    Title: Temp-tentsio bihurketa Desc.: Temp-tentsio bihurketa

    G Designed by: Julen Madrazo Document No: 3 Revision: G

    Checked by: Date: 13/10/2022 Size: A

    Approved by: Sheet 1 of 1


    0 1 2 3 4 5 6 7 8

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