VLSI Design (MEL G621 )

Lecture 3
(MOS capacitor)

Instructor

Dr. Apurba Chakraborty

Assistant Professor
Department of Electrical and Electronics Engineering
BITS Pilani, K K Birla Goa Campus

Date: 8/9/2022
Basic Building Block: Metal Insulator Semiconductor

MIS Structure

Difference of work function between gate metal

𝝓𝒎𝒔 = 0 and no oxide charge
and semiconductor in MIS Structure is zero. 2
 Physically not attached Physically attached
Electron affinity (qχ) = (vacuum level - 𝐸𝐶 )
Work function = (qχ) + (𝐸𝐶 -𝐸𝐹 )
 (eq1)
Here 𝝓𝒎𝒔 is the metal semiconductor work function difference.

At zero gate bias condition, we can write from eq1,

(eq2)
 Flat Band Voltage:
If we apply gate bias, the voltage will drop across the oxide and surface potential change.

(by using eq2, we can write,

(eq3)

Considering Charge conservation

′
𝑄𝑆𝑆 = charge on metal.
′
𝑄𝑆𝑆 = Oxide fixed charges

For flat band condition, surface potential Φ𝑆 = 0

Flat Band condition

 Metal Insulator Semiconductor(Continue..)
(Accumulation region)

Accumulation

• If VG < 0 V , holes are attracted at the Si-SiO2 interface

• Electric field towards the gate electrode.

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Metal Insulator Semiconductor(Continue..) (depletion region)

Metal Oxide Si –p type

depletion

Depletion
• Small Positive gate bias is applied. Holes will be repelled near to surface.
• This will leave negatively charged fixed acceptor ions. Hence the depletion region
forms. This region does not have almost any mobile carriers
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 Inversion
Inversion: • More increase of gate voltage increase surface potential. Ei
becomes smaller than Efp on the surface. At the interface,
region becomes n type. Electron concentration becomes
higher than the hole at the surface.
• At a particular gate voltage, Density of electron at the
interface becomes equal to density of hole at bulk substrate
(Threshold voltage).
• Further increase of gate voltage leads to increase of electron
concentration at interface but no increase of depletion region

Metal Oxide Si –p type

Threshold voltage:
We know from equation

At gate bias VG= VTN (Threshold voltage) electron

inversion layer forms and surface potentialΦ𝑆 = 2Φ𝑓𝑝 .
So equation can be written as

𝑉𝑂𝑋𝑇 is the voltage across the oxide at threshold voltage point. It

can be related to charge on gate metal and oxide capacitance as
Threshold voltage:
Now we can write the threshold voltage equation as , by putting the value of 𝑉𝑂𝑋𝑇

Threshold Voltage (P channel)