Ordering number : EN3149A 2SB1449 / 2SD2198

SANYO Semiconductors
DATA SHEET
PNP / NPN Epitaxial Planar Silicon Transistors

2SB1449 / 2SD2198 High-Current Switching

Applications
Features
• Surface mount type device making the following possible.
- Reduction in the number of manufacturing processes for 2SB1449/2SD2198-applied equipment.
- High density surface mount applications.
- Small size of 2SB1449/2SD2198-applied equipment.
• Low collector-to-emitter saturation voltage.

Specifications ( ) : 2SB1449
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO (--)60 V
Collector-to-Emitter Voltage VCEO (--)50 V
Emitter-to-Base Voltage VEBO (--)6 V
Collector Current IC (--)5 A
Collector Current (Pulse) ICP (--)9 A
1.65 W
Collector Dissipation PC
Tc=25°C 30 W
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C

Electrical Characteristics at Ta=25°C

Ratings
Parameter Symbol Conditions Unit
min typ max
Collector Cutoff Current ICBO VCB=(--)40V, IE=0A (--)0.1 mA
Emitter Cutoff Current IEBO VEB=(--)4V, IC=0A (--)0.1 mA
hFE1 VCE=(--)2V, IC=(--)1A 70* 280*
DC Current Gain
hFE2 VCE=(--)2V, IC=(--)3A 30
Gain-Bandwidth Product fT VCE=(--)5V, IC=(--)1A 30 MHz
Output Capacitance Cob VCB=(--)10V, f=1MHz (160)100 pF
Continued on next page.
* : The 2SBB1449 / 2SD2198 are classified by 1A hFE as follows :
Rank Q R S
hFE 70 to 140 100 to 200 140 to 280

Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

71006FA MS IM B-5893 / 41504TN (PC) / O1598HA (KT) / 7039MO, TS No.3149-1/5

 2SB1449 / 2SD2198
Continued from preceding page.
Ratings
Parameter Symbol Conditions Unit
min typ max
Collector-to-Emitter Saturation Voltage VCE(sat) IC=(--)3A, IB=(--)0.3A (--)0.4 V
Collector-to-Base Breakdown Voltage V(BR)CBO IC=(--)1mA, IE=0A (--)60 V
Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=(--)1mA, RBE=∞ (--)50 V
Emitter-to-Base Breakdown Voltage V(BR)EBO IE=(--)1mA, IC=0A (--)6 V
Turn-ON Time ton See specified Test Circuit. 0.1 µs
Storage Time tstg See specified Test Circuit. (0.7)1.4 µs
Fall Time tf See specified Test Circuit. 0.2 µs

Package Dimensions Switching Time Test Circuit

unit : mm (typ)
7001-002
IB1
PW=20µs
tr, tf≤15ns OUTPUT
10.2 4.5 IB2
0.2

1.3
INPUT RB
1Ω RL
VR
50Ω 100Ω
9.9

1.5MAX
8.8

+ +
1.4
1.35

1µF 1µF
3.0

1 2 3
VBE= --5V VCC=20V
0.8
1.2 0 to 0.3
10IB1= --10IB2=IC=2A
2.55 2.55 0.4
For PNP, the polarity is reversed.
2.7

1 : Base
2 : Collector
3 : Emitter
2.55 2.55
SANYO : SMP-FD

IC -- VCE IC -- VCE
--10 10
2SB1449 A A 2SD2198
0m 350m --300m
A A mA 0mA 0mA
--40 -- 0m 350 30 25 200mA
-- 50mA
2 45 A
A
m

0m 150mA
mA

00

--8
--200mA 8
40
Collector Current, IC -- A

Collector Current, IC -- A
--5
50

A
--4

--150mA
500m

100mA
--6 6
--100mA
50mA
--4 --50mA 4

--2 2

IB=0mA IB=0mA
0 0
0 --0.4 --0.8 --1.2 --1.6 --2.0 --2.4 0 0.4 0.8 1.2 1.6 2.0 2.4
Collector-to-Emitter Voltage, VCE -- V ITR09679 Collector-to-Emitter Voltage, VCE -- V ITR09680

No.3149-2/5
 2SB1449 / 2SD2198
IC -- VBE IC -- VBE
--10 10
2SB1449 2SD2198
--9 VCE= --2V 9 VCE=2V
--8 8
Collector Current, IC -- A

Collector Current, IC -- A
--7 7

--6 6

--5 5

°C

°C
--4 4

80

0
25°C
25°C

--20°C
Ta=8
--40°C
Ta=
--3 3

--2 2

--1 1

0 0
0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Base-to-Emitter Voltage, VBE -- V ITR09681 Base-to-Emitter Voltage, VBE -- V ITR09682
hFE -- IC hFE -- IC
1000 1000
2SB1449 2SD2198
7 7
VCE= --2V VCE=2V
5 5
Ta=80°C
3 3 Ta=80°C
DC Current Gain, hFE

DC Current Gain, hFE

25°C
2 2
--20°C 25°C
--20°C
100 100
7 7
5 5

3 3

2 2

10 10
--0.01 2 3 5 --0.1 2 3 5 --1.0 2 3 5 --10 2 0.01 2 3 5 0.1 2 3 5 1.0 2 3 5 10 2
Collector Current, IC -- A ITR09683 Collector Current, IC -- A ITR09684
VCE(sat) -- IC VCE(sat) -- IC
--10 10
2SB1449 2SD2198
5 IC / IB=10 5 IC / IB=10
Saturation Voltage, VCE(sat) -- V

Saturation Voltage, VCE(sat) -- V

3 3
2 2

--1.0 1.0

5 5
Collector-to-Emitter

Collector-to-Emitter

3 3
2 2

25°
--0.1 0.1 C

0°C 0°C
25°
5 C 8 5
Ta= Ta=
8
3 3
° C
2 2 --20
--20°
C
--0.01 0.01
2 3 5 --0.1 2 3 5 --1.0 2 3 5 --10 2 2 3 5 0.1 2 3 5 1.0 2 3 5 10 2
Collector Current, IC -- A ITR09685 Collector Current, IC -- A ITR09686
VCE(sat) -- IC VCE(sat) -- IC
--10 10
2SB1449 2SD2198
5 IC / IB=20 5 IC / IB=20
Saturation Voltage, VCE(sat) -- V

Saturation Voltage, VCE(sat) -- V

3 3
2 2

--1.0 1.0

5 5
Collector-to-Emitter

Collector-to-Emitter

3 3
2 2

25°
C
80°
--0.1 C 0.1
Ta= 0°C
25°
C
5 5 Ta=8 °C
--20
3 3
2 --20°C 2

--0.01 0.01
2 3 5 --0.1 2 3 5 --1.0 2 3 5 --10 2 2 3 5 0.1 2 3 5 1.0 2 3 5 10 2
Collector Current, IC -- A IT11324 Collector Current, IC -- A IT11325

No.3149-3/5
 2SB1449 / 2SD2198
VBE(sat) -- IC VBE(sat) -- IC
--10 10
2SB1449 2SD2198
7 7
Saturation Voltage, VBE(sat) -- V

Saturation Voltage, VBE(sat) -- V

5 5

3 3

2 2
Base-to-Emitter

Base-to-Emitter
--1.0
IC / IB=10
1.0 IC / IB=10
7 7
IC / IB=20 IC / IB=20
5 5

3 3

2 2
2 3 5 --0.1 2 3 5 --1.0 2 3 5 --10 2 2 3 5 0.1 2 3 5 1.0 2 3 5 10 2
Collector Current, IC -- A ITR09689 Collector Current, IC -- A ITR09690
ASO ASO
2 2
2SB1449 2SD2198
--10
ICP= --9A 10
ICP=9A
7 7

10
IC= --5A IC=5A
Collector Current, IC -- A

Collector Current, IC -- A

0m
1m
10

1m
5 5
10m

10
0m

s
s

ms
s

3 3
s

2 2

DC
DC

op
--1.0 1.0

era
op
era

tio
7 7

n
tio

5 5
n

3 3
2 2

1ms to 100ms: Single pulse 1ms to 100ms: Single pulse

--0.1 0.1
5 7 --1.0 2 3 5 7 --10 2 3 5 7 --100 5 7 1.0 2 3 5 7 10 2 3 5 7 100
Collector-to-Emitter Voltage, VCE -- V ITR09691 Collector-to-Emitter Voltage, VCE -- V ITR09692
PC -- Ta PC -- Tc
2.0 32
30
28
1.65
Collector Dissipation, PC -- W

Collector Dissipation, PC -- W

1.6
24

20
1.2
No
he 16
at
sin
0.8 k
12

8
0.4
4

0 0
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C ITR09693 Case Temperature, Tc -- °C ITR09694

No.3149-4/5
 2SB1449 / 2SD2198

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and are not guarantees of the performance, characteristics, and functions of the described products
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This catalog provides information as of July, 2006. Specifications and information herein are subject
to change without notice.

PS No.3149-5/5