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    3 views29 pages

    E.D. 2

    Uploaded by

    Gabriele Guerra

    Copyright:

    © All Rights Reserved
    Download as PDF or read online from Scribd
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    \ 4 Rspdschien banal & K umlence bands indirect gap semiconductors (for 2a pleysihesn) Ect minimum o the conduction band Ey: maximum of the valence band Ege Ee-Ey In the sem conductors with direct band radiative form Ceage emitting, one At normal Temperatures, 1” semiconductors the itis or absorbing photons). valence bands Semiconductors dwect 9s (for exSmple, gallium arsenide) to easier hove transitions between the bands in electrons thet have been able to yomp from the lence te the. conduction band ccevpy states neon Ee and leave empty states rear Ev. Therefore, it 1s reasonable to consider a second-order Taylor expansions around theceminimum (moximom) for the conduction (valence) band for the conduction band we obtain’ A BE]. (Ke ee acce (ee 2 te ot SE] (ewe)? EW 2 € (Ke) + le De zu dk | ya 7 ed lec ” ae : hoe define meee fn (effechve mass of electrons im the conducton band) we have thet dt oR and EM) -Ec y + HE (ents ey” (perbehe A Toke Me cw ee \eeue eames o.pproximation which 1s similar to the dispersion relation for Uso: E- SK me [ne] «dL OF. [Se] a came) + Therefore, around the banel minimum the electron behaves lke it wos free to move insiale the sola, withovt the periodic potential j the effect of the peniodhe potential has been inclodeal revalaen, (oe be Coats) OBC. ot the gravitation al mass me, the effective mass mE cy The effectwe mass depends on the ergstallogrsfie direction 5 for silieen, the average value of the e ee ee ete ase ac cee erat electron as free to move and we eon exploit the classeal relations fective mats for electric tromsport 1s) mE cg 20.26 Me. ced mig ut and Fs Sp meen Voy Maggy Ue Ft eu So) cee In on anole gous way, 1m the valence band , around the maximum we con make the approsimation:: e oe eye 2 oe — E(w) 2 Ey + (oy + + HE) ee) 4 £0O -Ey & K Te le L inn * kK tive mats of electrons in the valence band.) Jefnng mba = fi (effective A Aw \uso heyy differs from meee ond i pechalor is negative (becavte eel <°) Since , of normal T, tn the valence band the number of empty states is moch less Tog the member of filled: states, and since miyco , Fs mere convenient to Treat charge transport in the valence bend (rather than & movement. of electrons) as an equivalent movement (in the opposite direction) of the empty states (holes: absence of electrons). ice toe 0 ee te @ @ e © © 0 8 & © in the opposite direction t=tz+ © © © © © © 0 ® © © —— & tore formolly, let's consider the contnbution to the corrent density of the electrons inthe volerce band (N: number of states in the valence band per unit volume), LE all the N states m the volence band are ocevpied this 320 (alse applying é, in the band for each electron with speed HF we have another electron with speed Sp), 2 = Nope , Bo ts))e-gn [a = (% - 46 t ee gong Nich = [4 2 (% tag, )| 4 iE Pa 1 ) (electron Aunty m the valence band ) a coe the electron \ from the valence band 2 2.) Nope Le ey a (tah uy dale get)! $.-qua [eos (& - +) |e Fab) 1 ab+) +4(8-455) ares ve aN ‘ : L *F9 (arth mot <0) 244 (4 - 4£- ts) ° +4(% 84) ~ eve therefore, the effect on current of the Ned electrons remoined in the valence band can be modelled consideriny athele’, ne. an equivalent particle with postive charge (#q 24602 x40 C) and a posite effechve mass (mp = Im%vel=-mEy. >0), The energy of heles (absence of an electron) increases in the direction opposite te thet 1 which the energy of electron increases 7 The semi-classical (Drude) relations can be used , considering the electrons in the conduction band and the holes in the valence band with their effectve masses: alectrone im the conduction band: charge -4=-4g0r- 40°C <0 mass mot oo and xms (in silicon met = 0.26 me) holes in the valence band: charge $qrttcor 10°C >o macs mp ro (in silieon mf =0.36 me) the effect of an electric fields mgr mo: holes are “heawer" thon electrons), Ez. and Ey we cam generalize (rep dng Re nang DOS, using o para bolic approximation around f the rele onship obtained with the potential well model ; _. | (20h) €-€e Caensty of states of electrons m the conduction band) Deva = 4 (enpey" fee (density of states of holes 1 the valence band ) if (whch derive fiom the fact thot : Le around Ec: ER Bay 4 ate (Ge) = Bee hee eee KCK) 4 E+E Ae en) ECoavenn timers ume ume aeond Evi Eg eve t HE] ube bye Be ey eee recycle peri rdw Nyeo 2 Move ame me Fer the bos the effective masses ore com puted (averaged in the three directons) m a diferent way with respect to the effective masses ved m transport coleulations ) i , * thus mfp # mz and mop fz ms — (in silicon, mer = 4.08 Me 1 Mpp 0.57 me), In the study of devices, we will represent the bands as a function of position x plotting the velence banal maximum Ev and the conduction band maim fonction of x; we have thet Ey (x) = Eye 9 VOO | Ee (a) = Bes - 9 VOD Ecos Oe } Ec - Evo = Ee lx) - Evin) = Ey (the constants Evo ard Eco are due to the effect of the lattice periodic potential and to spatial confinement ). Unless wheres aa the energy reported on ordinates 1s the electron enerysy. #) [|e ° Die) (for T>0) Chovge transport im semiconductors. Concentration (number per unit volume) on of electrons in the conolucton band p of holes in the valence bond , Por Tso : nzo ond pzo (no electron im the conduction band and no hole in the valence band he, conduction band totally empty, valence band totally full) , Let's compute n (1), The number of electrons in the conduction bond per gmt volume and per unit energy is: n(€) = Dee (€) {(E) The concentration n of electrons in the conduction band (ne. the number of clectrons in the conduchen band per unrt volume ) 1s: ne Se n(e) dé = xo fe) de The number of holes im the valence bond per vnrt volume and per unit energy iss ple) = Dye (€) (4- P(e) a oceupot on t ron for holes ( probabs ey ey pe SX ple de = 5° dve(e) (4 FUE) de Wty for » state with energy E not to be ovevpied .2,to be empty) 7 . e é é e Deg (ED 0 x ne) fe Ee Ee Ee & a Fle) be ef x ef =1 & et x ee = fe ev é ey ey ey &y ; € « ' Dve le) i 4 4 (occupation probabihty fer electrons ) (ceevpation probability for holes) n(€) = DCEdew £(E) per unit velume anal unit eneray ne fo? Dledey fede per emit vleme ne \° at (2s) ae de «He : 7 7 ae ma 10 cee cc Bs meee 2 ‘ Ase ia { gr Ec- Ep 27K es 7 s— " “TTT | et (K isthe Bolts mann constant ) - eee 2 Ae co “eee z Pe vie unt a7 att j wx Ey nee: ey ée : _ Ex€ct€c-€ eet. Ene i = uw GOK _ E-be . tur j ee en é KT t [x Boke, kT x 26 -be deskT du; €2€e 2880 j ee ll rom a ~ Een bE ;00 uk an “alle 240 (228) em ut very fee (dx 2 anit (seunie\* a St : ° oe Samm : ir 3 zu : an KT men \ > _ * ( he *) . z= Ne e& a — Negquvaleat density of states for electrons 1a the conduction bend me 1 fen Ne (Te 300K) = 2.8 x40 % em73 Ne (T) = Ne (T2300K) (Ex) ww silicon: 300K, vait velome and unit eneray peed = bed, Hp © Deve (-f@) AE per unit volume, / Lily } pei éy st : a (um 4 P j 4 (2m) * fey-€ (*- 7yee dé x if ep-@ > Eg ev 2 KT e ——— nos W eo (with ep-€ > MP ) 1 [ano Luest approximation, Ne, Nv , Ey, the effechve masses de not depend on dlopmg.] In intrinsic semeondectors (s.e., without doping rmpurities) each electron thet has reached the conduction bond has left an hole in the velence bond + nepenc (intrinsic carrier concentration) z ~ Eecke - Eg-Ey - Feo Bh +f - tv e-éy nfeneps Neem i. oe a eileNx oo te, oF his (NoNy © 2eF in stheon at T2300K : nez4.5 x40%% emo? in intrinsic semicondveters: _ fe-£, _ Eg-ev _ Ee-€. Er -€ Eg-Ec +E - Ey nep 7 Nee eet aye Se eR ee Be we ee Ne Ne e ly Ect Ev - veg - (eerev) = MT dn (Me) 5 ep = Sekey + MT de (fu) = (intrinsic Ferm level’) Th Ny were equel te Ne, we would hove Ef= Eetfy (€5 of the mddle -f the gp), but Ny #Ne —y im silicon ot To300% + KE bn (1) = 0.013 eV ke) tn stlcon Cer Ey 2 Eg 24a eV Lili therefore Ex = Le= ty 0043 WV aR (at the mddle of the wp) Pee scone Ec-Ex @ Ex- Ey & sey 0.5% ev The values of ond p con be modi In silicon (IE grevp) ¢ n- dopin substitution of afew siheon otoms with ome impurities leg, PAS), donors, with concentration No % , fied insertino, impurities in & controlled voy (doping) = ws P J, ,. -£ t . Be -0.04¢ eV for P inside stheon nepz NeNy & Beni (mass-action low) DE =0.054 eV E hs side sheen in the ease of m dopingys nap ha clectione: mayorty errners —(lenteation eneray inside siliaan) pe ni cena — holes minority carers n inceensed occupation probability concentration) — Ef >Ez in the condvetion band (increased clectron po doping substrtotion of a few silicon ofoms with IE your mpurvties (ey 8), acceptors, with concentration Na YW nepeNerNy OTR ont Fe in the ense of p dopins: pone holes: mayority encriers ne RS cone electrons: minority corners increased hole concentration +» Ep <€e AE 0.044 eV for B inside silicon (omtzetion energy ingde sil con) Tipeally 40% cm ¢ No A < 407 em (much less than siltcan aterm concentrofion = 5x 40% cm™3 > crystal I (the vseal loping, ts < 40“ em? i degenerate doping, if > 40 Neutrality condition: ntNa = pt No In case 0 nd opin fer the moss -oetion 2 re nz Np Be = pre npent = p ow ond thus aot. : o> nteNpen-ne =o —5 nz Noy [ae = i =e ene ~ Exes ne Nee kT tN, S(e- Eo) (4-fole)) JE = Ne OH fe 5 aes Se 442 ee Dosy (ED fy(éo) = —4 = 7 ( ae be OF substitoting, into. the for Teo Ks Neo prey (more ever, ineres sing T the for Top 300K (intrinsic reg! Fermi- Dirac becomes smoother ) around T= 300 K (extansre Feogon) atice, band structure No’ so Not x Ne ne pane? ene pe Dh eens therefore n=peol x No” - Ec- Eb neNee Kt eNce peNv en Hae a Ny nepens most one electron) >> one remain about the same) (on each state there eon be of ) nevieality equation of solving, m £4, we ean f md thet Et varies with T: No Ee-€s ur enc - Lacky ver intrinsic region nap in the cose of p clopina, , we cen do analogous considerations anal for T=300K and in the extnnse region frinsie regen pm Ni ne extrinsic reas pe Na + Note thet for Eg=Ei we hove nien=p , ve Ev Ea~ i ne en (Ege 8x) = Ne aoe © p (E42) = Ny oi Therefore, in the ease of * doping, where noone : ~Ee-& = Ec- Ex Nee SieE o> Ne eT Ee Ee En & ee Lili ae (eg nearer te Ee than fo Ev) x i> Fle) while ,an the cose of p doping, where prone: - &g-ey ~ fsck Ny “gy -é e pe nw £ er sy Nv e > Ep-ey « Exe = & (Ef nesrer to Ev then to Ee) The expressions of NCEE) and pleps wR OF veEm we Semper coe um ty in the ease of m doping fe. nzNpo =Ne oo a Ee Eg =e KT In Net) Np (in the extrinsic. region) in the cose of p doping: reNe Ne Se Eg-Ev =e MT dn (*) Na (on the extrinsic regen) This expression of n (Et) [pep] is vahel 1b Ee Eg oo KT [E¢- ev oa therefore for highly doped sem condvetors 2 TE No (or Na) y 40%? em3 ; degenerate semieondvetors , wth Ege €e CEpzev) = a f \ dopant sTates form a bend whch overlaps with the semiconductor band ond the semiconductor (anth Eg very rear te Ec or te Ev) they can't be used. behoves We a metal “WL — Mil (235°) ( ara) WL) “Wii * + (Ef) and ple) com be alse expressed in ths alternate, equyalent form: ev Ee Et - Ec Bir Ed- Et ~EerES _ xn Eb Eg-€i neNee ee ur =Nee MW e@ Mm zsne ne - Eg-Ey _ Eg-bis Ein kv 7 ~ Eye Ex-Eg Da ieee ee Ne ad zNye ew snie & eee ne iPonyns (nm doping): Eg > Ee if pane (p doping): Epc ed + Ig beth 9 and p doping, /), a Lilie l Ld, ey WITT effective intrinsic semiconductor ore present: if Np >Na: LLLiLL. ie TTT 77. Z LLL LLL = & “TTT U7) effective n dep with concentration Np-Na mH eLleled., Pe coe “he aon, with concentrate -No L Average mines cectee . See (e-be) ned de fg nt) de wh n(é)2 dle) £(E) = A \e-Ec + fe) with Az4T (te) = ° (G-€e) A {Ee 4 ale = Je. : “ive St od 4 {eA Vee dé & ele Ate . . - Se e-€ E-EctEe-€; E-€ Eo-8, fb E-eprEcrEgmeT os fle), 4 we bots eT er fee ee Ate al a» E-€e 4 €-6.)e er iL (” e ~ EBs £€-€e ¢ a Jz, CEDE 2 se unt feo (Sa) ae Beet -~E2& €-Ge ar eo er Beet fe arte e io ic ae = Ez€c - "20 i Esc —» %=% : Baye 2 KT (-xF eo ME : de | * ZT = * “we -* fo FE ev des bt 5 Sede Se days -e-% —janteneal by parts at the nomerstor (we have approximated the FermiDirac distribution with the Boltemann distabstion and, as a consequence, we have Pound that the electrons im the conduction band behave as clossical particles ) me = tT Ape OP du xtpant Spe ager = miami Tre 4 finn Spe per € . 2 7 «pink The << : 2 sf ctp>e Ape 62 4finnzeq Mensa q (Hotmp) ne semiconductsrs: mzNp 27 ne CE pe he “ene Spero semiconductors: p= Na syne 2 N 2 p= Na a T= Op = 4p Na ne BE cg Ni Tazo onthe doping, anclonthetemperatire sx decres ses inerenaing, the ale ping. nate increases increasing, the doping, WheNb Db coreent, wsion D flex s nomber of particles that flow through a unit area im the onit time (oy. 1 eee D mes Dn an with ae ate Sn == 4 bn oy ba wath eee ‘erate dae 4 d ; 2- 2 4Dn ned 2% (4d case) we Sp 2 tq bp =-q Dp ap Qs Vinge Drift - diffusion equations: menn free path Ta pene Saha an Aor h Xo Leth * lp in 4d ope the 1 ae = es ok) ee 4 Uy [1m leo-2) bag FU [meerd eee ZT Ue [ 3 ecarine in 3D Open = Ats[n(ues)] aos 4 Vin [pOeeed] Po apeR = [oe EF Dz t Vern [n(xo-)] -4 Venn [m(xeee] = L Ving Pr Gured-n eet) ] = : oa : van (Modal ct) (mmo eda Ay] sree ga] [ Vena t= Vim bo; Lome Usinn shar Uae KE j me 2-ko ee dn 2-4 qt dn —. = =D, An me ole lee ) me ax i iP fe a ee le [oot - [a] . 5 on Bo Da diffusion coef ficient [and] AF Emnstean relation Dn = ME )n cs quili briom condition no net flux of particles and ef energy froma part to ancther of the system 2 . dD Brees) pene eh ee 2-€ 4 < 4 kr 4 ..( wf ge = > VGu) = 1 Ce dos ates ur (“dn at g (nia) Jo * AVCD ge = Venn) -Vore ar (TS go 2 Ete (2) Se eee Oe > aoe] > ug Do GmrPe -90r ge so > Set dpe 4 KE 4 de og = 1? ds IMs de ew [eden ve 7 2) -VOe0) 2 KT (a) 4 dae FOS de 1 Mm (pied Vou) Von) + “1. Me (tla) ar . % lee gh (Ra) RAE = veed-verey t 4 ‘aa p> et, p<] oy | = = VGer) -V (x4) 2 KE ky (2G). «, Um (Bbay FACE} = HE (Feat) (S82) = (pid )eo (SED 60 (42) par) i = _— (xa) plea) Voy ee a n(x) pads nd masteaction law Ec (x)= Ec, -qve) Ev (x) = Eve - 4") Ec (x) - Ev (0) = Eee -Eve = Ey abu) t 4 ~ Sete Efe xBe (xe) + Epes) +E (x0) Ef 40) Lae fA a («etait t \ ben €g 7 KT V(r) -VGer) 2 KE by ( nleey E KT mm —— neNc & WR Ee er) +e (44) + Eg (ms) - Eg (ee) + & (42) - €¢ (xe) = q vest) - 4 Vi) + Be (tx) 6c (42) am “ : j ae 1 (Eee 4 VCH) ~ (Eas = 4 VOosd) 2 -4Vlen) +4 vt) Egle) 2 Eg (ou) Var x1 > Ef is constant (and Vox), Ee) and Ev) depend on n(x) ea aeen es to the written relations at equilibriem ) no) example: Evncovm * Xs electron, offanity La 9X Evecuem - Ee (minimom eneray that we need te ne to the semeondveter Heh at Tro in order te extract electrons) barrier ho net flox of porticles and of enersy from & part to another of the system + Meee (ED = Maer ED VE > Dy (€) fr (€) De (4-fe(€)) = De (E) fe (€) Dr(E) (4- fr(€d) Defede -Defr Dafa =De fede “Defede fr — fro fee fe- Bite teehee A = VE —> Efrz€te 5 eonstant Ef = EI ~ e- Ege ee ee Ec (x) -€ Lone Ne OTT wth constant EF - Gels - ef dn, A dE) Nee ut KT dn _ _ déebo ae dx i dx . = Se a =e n() Eel) = Beg 4 VX) + = po) = 4 Ad 2-48 fo kT dn =e n@ ea din nw KT ae 2-4 penGO—E goa 4 dn 2 - 4a ni) & Da Gn nO E 4 q Dn de 20 = Snzo » pld= Ny eo EO eT with constant Ef dp 4 ded ny eH dx KT dx = ker dp. « SENG) pe) KT dp 3 gE ple) eat er po) Ev) = Eve VG) + Able) io 4é dps oe PATHE «GA pOOe + Ye ME dps apypODE = 4dr SE = gpepe > Dp qpe POD eq gp 20 -» dpzo —Lllilill Lllil e generation | recombination ey "7, éy W777 Gs number of clectron-hole pairs. generated per unit volume and per unit time (generation rate) A: number ef electron-hele pairs recombined per unrt volome and per unit time (recombination rate) ot equi brwm : n and p constant in time Gah G & number of electrons in VB x number of empty states in CB R « number of deetrons in CBX number of empty states in VB . . . [RR 3 Aoi [ (8 ais i Oot-Cpl= G — Ot: fa]. et | at equbbrom: G=R=F"P for an intrinsic semecenducter 2 Ge Rs rap arnt G hos neg gible dependence on depin 4G remains rat also in the presence of depina, ‘ - (with mee = NeNy @7 KP r 1 G+ thermal generaten rate) t 2 ReG > rnpzrns 9 Apsne at equilibrivm : (mass-setion law) ineremsingy ny Rinerenses while G remains constant — p decresses entl ape ns example: _ Ootside eqetls brigm s for example exposition fe ght of an ne doped semicondlectir WLLL Lr haat LLM Anz Pao Sn LLLLL, rrarar' ; ight on on, 7 % hight off photons _ TOTTI Wo MEST T7777 pas tro + Sp Wf Tanne with Snz 5p ReGrn Rar (ane $n) (pro Sp) R= Gry + Gopt bse z 26thernt Rno pre = Me e hn po 2 Gth+ opt Cah ee eed r(nne+ $0) (Prot Sp) = Gra + Gopr U=R-Gry2 ‘ #1 (net $n) (bret Sp) -rnt net recombination rate rn low-inyeetion condition 2 $n << Mne Us R-Gth zr (Met Sn) (pnet Sp)-rnt r (Roe Fow +1me Sp+ Pre ns Sp Sn —w%) E =r (Sp (nme + $n) + pre Sn) =r (Ane Spt pre Sn) = F (Mno+Pre) Sp zr Mne Sp Z Mn Sn= 5p % nne (because Ano >> Pre) fortes ts Thole average Iifetime (' rat ) ao (hele averaSe ston time) = Sp. net recombination rate when the cquilibriom 15 alteresl | im a neclepect Semiconductor et (where holes ore mineeitarces) in low-inyection conditions 5p (o*)= 5p (on) = Spo) -£ - dpatt) GyR 2 -Uz- SR de Spt) = - a eee % = Sple) e % ee Te OY ‘ prs pros Sp > Spatt = fe 5p Bs Er thitasc aif menett Ty AROS Reto + dank It “dt e a —— eee ee eae ane Spt) one ‘° 1. § os 5 fp : "AS C# A 5p col tts 2 " " ’ i Splt) = Sp(o) e Aor A WO oF ar. T teat t _e LL oa te ate Tt ), ' = Dee 4 pots wth Se“Bars tr (oF ag ¥):- Te %| o -% si [rGneS)[P- (Sacre) ar]. (- Temes * ef aT x1 3 z[-tre wl +t SRH Model (Shockley ~Read - Hall ) MLLEL SEL ee at ye hy VOSS LLL rq: electron capture from cB rate fiz electron emission to ca rate 3 + electron emission To VB rate (hole capture frem ve) r+ electron capture from ve rate (hole emission to VB) at equbbbewm: om and p constant —p reere, Ya=rs eutside equilbriom but in steady-state Cconstant charge in the traps): Uz ta-thers-ry 4 which depends on trap concentration and temperature Ne Ven Te capture cress section of the traps J “thermal veloty - trop concentration Continuity equation (which relates the charge flex ,and thes current density, tothe time variation of charge concentration andte the yencration andrecombination rates) GR for holes: re free A (pdx S) = b(x) S dt - $(x+dxdSdt + (G-R) des dt +» dp de-S ges (x) = ) Be = Ded blardy Glens + (G-R) } ap. ad GAR’ 2B ~ A Bde + (@-R) ? 4 ax for electrons: A tad G00 bae> Heke at hay eed a3: Pod blards) + (GR) 4 an, -a (@-R) an, A adn - = ao 4 Gne-4@) oF 3x + (G-R) in low=inyection conditions; Uzk-G2 Sp. 2 :-4 Oy 5 Iny: ne ons t = one qe $ if Vro : Ifo anode cathode. if Veo : Lzo Vv lane of the yunction (x20) r! i y Abropt yunction at equilt briom: — n + charge density of the donors ; ( — charge density of the charge carriers Vous) - Vox) «KE tm ( 2), re t 2 7 pea) ~ q ne. ) - wn xeceot pzNn jn Me a ne Nb PNA = KE my (38) In mere: one Ny | ps Mh 2 ne us s * Vo: KT & (ses > contact petentel ne ) (beilt- in petentiol Voi) Voz Vr tn (Sexe) with Vrz KT ne Z (thermal voltage, oF voltage cqoivalent: of temparature) Electric field and potential in the pr yenchon at e quilt brivm x s. Es 2 Ee Erg, (€. = 8.354 eto E 1 Ges, 2 44.8) g&) = GP Od qn) -9Na <0 Ce pe aaa Ns x20 At. 4ple)= qn) -4Na seco et és dV 5 gple)-qn@eqNo x50 al xt és, Ee (x)= E¢ n(x) Nee KF Eg -€y (x! pOd=Nve xr =4n2-qNo Ee (x) = Ec, - VG | thet 32. ' + Dd Ey (x) = Eve - VO) 4 (with Ec, and Eve taken for x -4Na xp es + C120 > Caz gNa xp 5 EGexn)zo 7 -4NR xn 4 Cr 20 > Coz GND xy - a és, : . aye (e+ x9) = Nb (xn-%) es, EG) = - ga. (cme) 31 ECed = + GNE (e-em) esi €to-)..- Nn xp es €or) = - gle xn ra the totel charge 1s null» -qNa%eS +4No xn Sz0 + Naxp = NoX%n 2 E(o-)= w. HEC) en Ele) Uf Nao? No: Xp ee xn Ete) oe = Eco) es. =p

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