SEMICONDUCTOR 13N60 Series RoHS

RoHS
Nell High Power Products
N-Channel Power MOSFET
13A, 600Volts
DESCRIPTION
The Nell 13N60 is a three-terminal silicon
device with current conduction capability of D
13A, fast switching speed, low on-state
resistance, breakdown voltage rating of 600V,
and max. threshold voltage of 4 volts.
They are designed for use in applications such
as switched mode power supplies. DC to DC
converters, PWM motor controls, bridge circuits G GD
D S
and general purpose switching applications. S

FEATURES TO-220AB TO-220F

RDS(ON) = 0.26Ω @ VGS = 10V (13N60A) (13N60AF)
Ultra low gate charge(40nC max.)
Low reverse transfer capacitance
(C RSS = 3pF typical)
Fast switching capability
D (Drain)
100% avalanche energy specified
Improved dv/dt capability
150°C operation temperature

PRODUCT SUMMARY
ID (A) 13 G
(Gate)
VDSS (V) 600
RDS(ON) (Ω) 0.26 @ V GS = 10V
S (Source)
QG(nC) max. 40

ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)

SYMBOL PARAMETER TEST CONDITIONS VALUE UNIT
VDSS Drain to Source voltage T J =25°C to 150°C 600
V DGR Drain to Gate voltage R GS =20KΩ 600 V

V GS Gate to Source voltage ±30

T C =25°C 13
ID Continuous Drain Current
T C =100°C 8.2
A
I DM Pulsed Drain current(Note 1) 39
I AR Avalanche current(Note 1) 4.3

E AR Repetitive avalanche energy(Note 1) l AR =4.3A,R GS =50Ω, V GS =10V 1.2

mJ
E AS Single pulse avalanche energy (Note 2) l AS =4.3A 235
MOSFET dv/dt ruggedness 100
dv/dt V /ns
Peak diode recovery dv/dt (Note 3) 20
TO-220AB 116(0.93)
PD Total power dissipation (Derate above 25°C) T C =25°C W(W/°C)
TO-220F 34(0.27)
TJ Operation junction temperature -55 to 150

T STG Storage temperature -55 to 150 ºC

TL Maximum soldering temperature, for 10 seconds 1.6mm from case 300

Mounting torque, #6-32 or M3 screw 10 (1.1) lbf . in (N . m)

Note: 1. Repetitive rating: pulse width limited by junction temperature. .

2 . I AS =4.3 A , V DD =50 V , R GS =25 Ω, starting T J = 25 °C.
3 . I SD ≤ 13 A, di/dt ≤ 200 A/µs, V DD ≤ V (BR)DSS , starting T J = 2 5 °C.

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 SEMICONDUCTOR 13N60 Series RoHS
RoHS
Nell High Power Products

THERMAL RESISTANCE
SYMBOL PARAMETER Min. Typ. Max. UNIT

TO-220AB 1.07
Rth(j-c) Thermal resistance, junction to case ºC/W
TO-220F 3.7

TO-220AB 62.5
Rth(j-a) Thermal resistance, junction to ambient ºC/W
TO-220F 62.5

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)

SYMBOL PARAMETER TEST CONDITIONS Min. Typ. Max. UNIT

OFF CHARACTERISTICS

V(BR)DSS Drain to source breakdown voltage I D = 1mA, V GS = 0V 600 V

▲V (BR)DSS/▲T J Breakdown voltage temperature coefficient I D = 1 m A, V DS =V GS 0.73 V/ºC

V DS =600V, V GS =0V T C = 25°C 10

I DSS Drain to source leakage current μA
V DS =480V, V GS =0V T C =125°C 100

Gate to source forward leakage current V GS = 30V, V DS = 0V 100

I GSS nA
Gate to source reverse leakage current V GS = -30V, V DS = 0V -100

ON CHARACTERISTICS

R DS(ON) Static drain to source on-state resistance V GS = 10V, l D = 6.5A 0.24 0.26 Ω
V GS(TH) Gate threshold voltage V GS =V DS , I D =250μA 2 4 V
gfs Forward transconductance V DS =40V, I D =6.5A 16.3 S
DYNAMIC CHARACTERISTICS

C ISS Input capacitance 1325 1765

C OSS Output capacitance V DS = 100V, V GS = 0V, f =1MHz 50 65

C RSS Reverse transfer capacitance 3 5 pF

C OSS Output capacitance V DS = 380V, V GS = 0V, f =1MHz 30

C OSS eff Effective output capacitance V DS = 0 to 480V, V GS = 0V 145

QG Total gate charge 30.5 40

V DD = 380V, V GS = 10V
Q GS Gate to source charge 6.0 nC
I D = 6.5A, (Note1,2)
Q GD Gate to drain charge (Miller charge) 9.5

ESR Equivalent series resistance (G-S) Drain open 2.8 Ω

SWITCHING CHARACTERISTICS

t d(ON) Turn-on delay time 14.5 39

tr Rise time V DD = 380V, V GS = 10V 10.5 31.5
ns
t d(OFF) Turn-off delay time I D = 6.5A, R G =4.7Ω (Note1,2) 45 100

tf Fall time 10 30

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 SEMICONDUCTOR 13N60 Series RoHS
RoHS
Nell High Power Products
SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL PARAMETER TEST CONDITIONS Min. Typ. Max. UNIT
VSD Diode forward voltage I SD = 6.5A, V GS = 0V 1.2 V
I S (I SD ) Continuous source to drain current Integral reverse P-N junction 13
diode in the MOSFET
D (Drain)

A
I SM Pulsed source current
G
(Gate) 39
S (Source)

t rr Reverse recovery time I SD = 6.5A, V GS = 0V, 280 ns

Q rr Reverse recovery charge dI F /dt = 100A/µs

3.5 μC
Note: 1. Pulse test: Pulse width ≤ 300μs, duty cycle ≤ 2% .
2. Essentially independent of operating temperature.

ORDERING INFORMATION SCHEME

13 N 60 A

Current rating, ID
13 = 13A

MOSFET series
N = N-Channel

Voltage rating, VDS

60 = 600V

Package type
A = TO-220AB
AF = TO-220F

■ TEST CIRCUITS AND WAVEFORMS

Fig.1A Peak diode recovery dv/dt test circuit Fig.1B Peak diode recovery dv/dt waverforms

D.U.T. + V GS Period
P.W.
(Driver) P.W. D=
Period
V DS
V GS =10V
-
l FM , Body Diode forward current
+ l SD
(D.U.T) di/dt
- L
l RM

Body Diode Reverse Current

RG
Body Diode Recovery dv/dt
Driver V DD V DS
* dv/dt controlled by R G (D.U.T)
Same Type * l SD controlled by pulse period V DD
V GS * D.U.T.-Device under test
as D.U.T.

Body Diode Forward Voltage Drop

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 SEMICONDUCTOR 13N60 Series RoHS
RoHS
Nell High Power Products

■ TEST CIRCUITS AND WAVEFORMS (Cont.)

Fig.2A Switching test circuit Fig.2B Switching Waveforms

RL V DS
V DS 90%

V GS

RG

V DD
D.U.T. 10%
V GS
10V t d(ON) t d(OFF)
Pulse Width ≤ 1µs tR
Duty Factor ≤ 0.1% tF

Fig.3A Gate charge test circuit Fig.3B Gate charge waveform

V GS

Same Type as
50kΩ QG
D.U.T.
12V
10V
0.2µF 0.3µF

V DS
Q GS Q GD

V GS
D.U.T.

3mA

Charge

Fig.4A Unclamped lnductive switching test circuit Fig.4B Unclamped lnductive switching
waveforms

L
V DS

BV DSS

l AS

RG V DD
l D(t)
V DS(t)
D.U.T. V DD
10V

tp
Time
tp

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 SEMICONDUCTOR 13N60 Series RoHS
RoHS
Nell High Power Products
■ TYPICAL CHARACTERISTICS

Fig.1 On-State characteristics Fig.2 Transfer characteristics

40 60
Top: V GS
15.0V
10.0V
8.0V

Drain-Current, l D (A)
Drain Current,l D (A)

7.0V
10
6.5V
6.0V
5.5V 150°C -55°C
Bottom: 5.0V
10
25 °C

1
Notes: Notes:
1. 250µs pulse test 1. V DS =20V
2. T C = 25°C 2. 250µs pulse width
3 0.2
0.6 1 10 20 2 4 6 8

Drain Source voltage, V DS (V) Gate-Source voltage, V GS (V)

Fig.3 On-Resistance variation vs. Fig.4 Body diode forward voltage variation vs
Drain current and Gate voltage Source current and Temperature
Drain-Source On-Resistance, R DS(ON) (Ω)

0.8 100
Reverse drain current, l DR (A)

0.6
150°C

V GS =10V
0.4 10 25 °C

V GS =20V
0.2
Notes:
1. V GS =0V
2. 250µs pulse Test
0 1
0 10 20 30 40 0.4 0.8 1.2 1.4

Drain current, l D (A) Source-Drain voltage, V SD (V)

Fig.5 Capacitance characteristics Fig.6 Gate charge characteristics

50000 10
C iss = C gs +C gd ( C ds = shorted )
V DS =120V
C oss = C ds +C gs
Gate-Source voltage, V GS (V)

10000 C rss = C gd V DS =380V

8
V DS =480V
Capacitance (pF)

C iss
1000
6

100 4
C oss

10 2
Notes: C rss Notes:
1. V GS =0V
1. l D =6.5 A
2. f=1MHz
1 0
0.1 1 10 100 600 0 10 20 30 40

Drain-Source Voltage, V DS (V) Total gate charge ,Q G (nC)

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 SEMICONDUCTOR 13N60 Series RoHS
RoHS
Nell High Power Products

Fig.7a Maximum safe operating area Fig.7b Maximum safe operating area
for 13N60A for 13N60AF

100 100
Operation in This Area is Limited by R DS(ON) 10µs Operation in This Area is Limited by R DS(ON) 10µs

100µs 100µs

Drain current, l D (A)

10
Drain current, l D (A)

10
1ms 1ms
10ms
10ms
DC
1 1

DC

0.1 Note:
0.1 Note:
1. T C = 25°C 1. T C = 25°C
2. T J = 150°C 2. T J = 150°C
3. Single Pulse 3. Single Pulse
0.01 0.01
0.1 1 10 100 1000 0.1 1 10 100 1000

Drain-to-Source voltage, V DS (V) Drain-to-Source voltage, V DS (V)

Fig.8a Transient thermal response curve for 13N60A

2
Thermal response, R th(j-c) (t)

D = 0.5

Thermal response, Rth(j-c)

0.2
Notes:
0.1 1.R th(j-c) (t)=1.07°C/W Max.
2.Duty factor, D=t 1 /t 2
0.1 3.T JM -T C =P DM×R th(j-c) (t)
0.05
0.02
PDM
0.01
(Single Pulse) t1

T2

0.01
10 -5 10 -4 10 -3 10 -2 10 -1

Rectangular Pulse Duration, t 1 (sec)

Fig.8b Transient thermal response curve for 13N60AF

5
Thermal response, R th(j-c) (t)

D = 0.5

1
0.2

0.1
PDM
0.05
t1

0.1 0.02
T2
0.01
Notes:
(Single Pulse) 1.R th(j-c) (t)=3.7°C/W Max.
2.Duty factor, D=t 1 /t 2
3.T JM -T C =P DM×R th(j-c) (t)
0.01
10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2

Rectangular Pulse Duration, t 1 (sec)

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 SEMICONDUCTOR 13N60 Series RoHS
RoHS
Nell High Power Products

Fig.9 Breakdown voltage variation Fig.10 On-resistance variation vs.

vs. temperature temperature

1.2 3.0
Drain-source breakdown, BV DSS

2.5

Drain current, l D (A)

1.1
2.0

1.0 1.5

1.0
0.9 Notes: Notes:
1. V GS =0V 0.5 1. V GS =10V
2. I D =1mA 2. I D =6.5A
0.8 0.0
-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200

Junction temperature, T J (°C)

Drain-to-Source voltage, V DS (V)

Fig.11 Maximum drain current vs.case

temperature

15

12
Drain Current, I D (A)

0
25 50 75 100 125 150

Case Temperature, T C (°C)

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 SEMICONDUCTOR 13N60 Series RoHS
RoHS
Nell High Power Products
TO-220AB

10.54 (0.415) MAX.

9.40 (0.370) 3.91 (0.154) 4.70 (0.185)

9.14 (0.360) 3.74 (0.148) 4.44 (0.1754)
1.39 (0.055)
2.87 (0.113)
1.14 (0.045)
2.62 (0.103)

3.68 (0.145)
3.43 (0.135)
16.13 (0.635) 15.32 (0.603)
15.87 (0.625) 14.55 (0.573)
PIN 8.89 (0.350)
1 2 3 8.38 (0.330)
4.06 (0.160) 29.16 (1.148)
3.56 (0.140) 28.40 (1.118)
2.79 (0.110)
2.54 (0.100)
1.45 (0.057)
1.14 (0.045) 14.22 (0.560)
13.46 (0.530)
2.67 (0.105)
2.41 (0.095) 0.90 (0.035)
2.65 (0.104) 0.70 (0.028) D (Drain)
5.20 (0.205) 0.56 (0.022)
2.45 (0.096)
4.95 (0.195) 0.36 (0.014)

G
(Gate)

S (Source)
All dimensions in millimeters(inches)

TO-220F

10.6
10.4 3.4
3.1

2.8
2.6

3.7
3.2 7.1
6.7

16.0
15.8
16.4
15.4 2
1 3 10°
3.3
3.1

13.7
13.5

0.9 0.48
2.54 0.7 0.44
TYP 2.54
2.85
TYP
2.65

4.8
4.6
D (Drain)

G
(Gate)

S (Source)

All dimensions in millimeters

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