TOSHIBA 4N25,4N25A,4N26,4N27,4N28(Short) TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR 4N25(Short), 4N25A(Short), 4N26(Short), 4N27(Short), 4N28(Short) AC LINE /DIGITAL LOGIC ISOLATOR. Unit in mm DIGITAL LOGIC/DIGITAL LOGIC ISOLATOR. TELEPHONE LINE RECEIVER. TWISTED PAIR LINE RECEIVER, 4 HIGH FREQUENCY POWER SUPPLY FEEDBACK CONTROL, RELAY CONTACT MONITOR. __ | The TOSHIBA 4N25 (Short) through 4N28 (Short) consists of a gallium arsenide infrared emitting diode coupled with a silicon phototransistor in a dual in-line package. © Switching Speeds 1 Sys (Typ.) ros-a0 © DC Current Transfer Ratio : 100% (Typ.) Bassons © Isolation Resistance : 1070 (Min) © Isolation Voltage 1 2500Vrms (Min,) wo © UL Recognized : ULIS77, File No, £67349 TOSHIBA _11-7A8 Weight : 0.4¢ PIN CONFIGURATIONS (Top view) q ao [he lhe ANODE CATHODE N.C. EMITTER COLLECTOR : BASE,TOSHIBA 4N25,4N25A,4N26,4N27,4N28(Short) MAXIMUM RATINGS (Ta =25°C) CHARACTERISTIC SYMBOL | RATING | UNIT Forward Current (Continuous) Tp 30 mA Forward Current Derating alp/°C. 107 ®)_fmarec 8 ‘Peak Forward Current (Note 1) Ipr 3 A 5 [Power Dissipation Pp 150 mW Power Dissipation Derating aPp/°C 2.0) mw/"¢| Reverse Voltage VR 3 Vv = [Collector Emitter Voltage BVCEO 30 Vv © | Coltector-Base Voltage Bv¢RO_|__70 v © |Emitter-Collector Voltage BVECO 7 Vv [Collector Current (Continuous) Te 00 mA & [Power Dissipation PC 150 mW © [Power Dissipation Derating aPC 2.0 mw 7 | Storage Temperature Range Tag =55~150_| °C 3 [Operating Temperature Range Tope =55~100_| °C [Lead Soldering Temperature (10s) Tyol 260, °C 5 [Total Package Power Dissipation Pr 250 mW 8 Tal Pekase ‘Power Dissipation aPps°c 330 fwrd (Note 1) Pulse width 300s, 2% duty cycle. (*) Above 25°C ambient.TOSHIBA 4N25,4N25A,4N26,4N27,4N28(Short) ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION man. | Typ. [Max.| UNIT 7 [Forward Voltage 7 Tp= oma — free v m2 [Reverse Current Tk VR=3V, =f = 00 3 | Capacitance Cp V=0, f=1MHz = 30 | — | pF DC Forward Current Gain | bre | VoR=5V, Io=500jA = [20]; =, = Collector-Emitter - 7 sz [Breakdown Voltage [Y «BR CBO| Io=1mA, IP=0 so} -|- | © |Collector-Base Breakdown _ 2 Voltage IV cer) CBO) Io= 100.8 wl) —}|—|v ° Emitter-Collector a = -|- & | Breakdown Voltage [V (BR) ECO|TE=100HA 7 v [Collector Dark Current TcEO __|VoR=10V = i] 50 | aA Collector Dark Current Toro _|VcB=10V = [or] 20 [na Collector Emitter _ Capecitance Cog |V=0, f=1MHe — | wl — | Current Transfer Ratio To/Ip__|Tp=10mA, Vop=10V 20| 100 | — | % Collector-Emitter — ~ Seturation Voltage Vow (sat) |Iip=50mA, Io=2mA. — | o1} o5 | v Capacitance Input to To, LIME Output cs Vg=0, f= 1ME: — | os| — | pr © [[eolation Resistance Rg Vg=500V, R.H=60% w{—|— fa 5 BVg __[AC, 1 minute 2500 | — | — [Vrms 5 Isolati 4N25, 4N25A_ 2500; — | — aton \"4N26, 4N27 AC, Peak 1500 [ — | = | vpk 2 |v . 6 [Voss ange Bys() 500 | — | — ANA ‘AG, 1 second i775 | — | — | Vrms Rise / Fall Time tite [ROE oon oaamA —| 2] - | os se /Fal Tie weg [Rowse ToR=BI-R | Taso [oe (*) JEDEC registered minimum BVg, however, TOSHIBA spi 2500Vims, 1 minute. ies a minimum BVg ofTOSHIBA 4N25,4N25A,4N26,4N27,4N28(Short) et Po 2. Eo be A 2 Zé a zh & & 2 z ea goa aa VEN? TeeaArURE co uns Tremaine co rp - DR Ip - Vr = 3 : 25 & = oo 4 i i g 38 : zg 2 5 05 PULSE WIDTH=300p8 03) ce 10 107 oT 70 "(eos 02a bur eres nao bp ronan vozsae vp 60 AVp/4Ta = Ip so Ipp - Vep 8 a s oI Bg Eo ES -2,) Eo 88 B al 34 : no BE 19 5 PULSE WIDTH= 100 # 4 [REPETITIVE FREQUENCY 8 -os aos 00H | : = tas os to 4a 1s 28 PORWARD CURRENT Ip (nA) PULSE FORWARD VOLTAGE gp (V)TOSHIBA COLLECTOR CURRENT Ig (mA) COLLECTOR CURRENT Ie. (mA) Io - Ip 1 2 10 Ww FORWARD CURRENT Ip (mA) a0 0 = 0a ‘AMBIENT TEMPERATURE Ta (0) 70 4N25,4N25A,4N26,4N27,4N28(Short) ‘CURRENT TRANSFER RATIO. Ig/ip (#) COLLECTOR CURRENT Ig GAY VOUIKGE Ver COLLECTOR EMITTER SATURATION Io/Ir - Ir 100 120} 18 310) B00 FORWARD CURRENT Ip (nA) Ic - Vor ° : 4 COLLECTOR-EMITTER VOLTAGE Vcr «) Vox (sat) ~ Ta oa la = ~37 030A RT AMBIENT TEMPERATURE. Ta CO)TOSHIBA 4N25,4N25A,4N26,4N27,4N28(Short) JOR DARK CURRENT oxo Wed? SWITCHING TIME Gm) Iceo - Ts 10} Ver=24v ao 10 wo SWITCHING CHARACTERISTICS ~ RL (SATURATED OPERATION) Yoo! oT 7 20 LOAD RESISTANCE Ry, kD) {CTOR DARK CURRENT ego. GA) | | Bo 18 10 BASE-EMITTER RESISTANCE Rigg (0) SWITCHING CHARACTERISTICS ~ Rpg (SATURATED OPERATION) Tee250—Yoc=5v ® ao, VOUT our 208 & g Eo E f a aM-~—~S00r 100k 0k 90k BASE-EMITTER RESISTANCE Rpg WD)TOSHIBA 4N25,4N25A,4N26,4N27,4N28(Short) RESTRICTIONS ON PRODUCT USE @ TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified ‘operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices," or “TOSHIBA Semiconductor Reliability Handbook" etc. oo707e8c @ The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc... Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. @ Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic, Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage. © The products described in this document are subject to the foreign exchange and foreign trade laws. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. I OOO