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2 SD 2141
2 SD 2141
2SD2141
Built-in Avalanche Diode
for Surge Absorbing B
Darlington
(1.5kΩ)(100Ω) E
Silicon NPN Triple Diffused Planar Transistor Application : Ignitor, Driver for Solenoid and Motor, and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM20(TO220F)
Symbol 2SD2141 Unit Symbol Conditions 2SD2141 Unit 4.2±0.2
10.1±0.2
4.0±0.2
VCBO 380±50 V ICBO VCB=330V 10max µA 2.8 c0.5
8.4±0.2
16.9±0.3
VEBO 6 V V(BR)CEO IC=25mA 330 to 430 V
ø3.3±0.2
IC 6(Pulse10) hFE VCE=2V, IC=3A 1500min a
A
0.8±0.2
b
IB 1 A VCE(sat) IC=4A, IB=20mA 1.5max V
PC 35(Tc=25°C) fT VCE=12V, IE=–0.5A 20typ MHz
±0.2
3.9
W
13.0min
Tj 150 °C COB VCB=10V, f=1MHz 95typ pF 1.35±0.15
Tstg 1.35±0.15
–55 to +150 °C
0.85 +0.2
-0.1
0.45 +0.2
-0.1 2.4±0.2
2.54 2.54
2.2±0.2
Weight : Approx 2.0g
a. Type No.
B C E
b. Lot No.
4mA
2mA 2
5 I C =7A 5
I B =1 mA
)
p)
5A
p)
Temp
em
Tem
3A
eT
1
ase
(Case
as
1A
(C
C (C
5˚C
–30˚C
25˚
12
0 0 0
0 2 4 6 0.2 0.5 1 5 10 50 100 200 0 1.0 2.0 2.4
Collector-Emitter Voltage V C E (V) Base Current I B (mA) Base-Emittor Voltage V B E (V)
(V C E =2V) (V C E =2V)
10000 10000 5
5000 Typ 5000
DC Cur rent Gain h F E
DC Cur rent Gain h F E
C
Transient Thermal Resistance
5˚
12
1000
1000 ˚C
500 25 1
500 C
5˚
–5
0.5
100
50 100
50
10 20 0.1
0.02 0.1 0.5 1 5 10 0.02 0.1 0.5 1.0 5 10 1 10 100 1000
Collector Current I C (A) Collector Current I C (A) Time t(ms)
Heatsink: Aluminum
10
5 in mm
ms
0m
D
Cu t-off Fre quen cy f T (M H Z )
30 C 30
s
Collector Curre nt I C (A)
1
W
ith
In
20 0.5 20
fin
ite
he
at
150x150x2
si
nk
Without Heatsink
2
0 0.01 0
0.01 0.05 01 0.5 1 5 1 5 10 50 100 500 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
147