Fabrication and characterization of graphene/Sb,O; based Photovoltaic cell K.R. Nemade, S.A. Waghule: Department of Physics, Sant Gadge Baba Amravati University, Amravati 444 602, India. e-mail: sandeepwaghuley@sgbau.ac.in Abstract ‘Thick fim photovoltaic cell composed of graphene/Sb,0, was fabricated on indium tin oxide (ITO) glass substrate by screen-printing process. Current-Voltage ([-V) measurement has been done on the solar cell using incandescent light bulb. Diode propertics determined from I-V measurements are open Circuit voltage (Vo.). short cifcuit current (Ie), fill factor (FF), and conversion efficiency (q). The solar cell had Voe Of 480 mV, lec of 326.8MA, FF=0.33 and n =11.2 %. Keywords: Photovoltaic cll, Indium tin oxide, Graphene. 1. Introduction In recent years, advances in material science and engineering have produced efficient photovoltaic celle with improved absorption of the colar irradiation and charge carrier transport, which have responsible to increase in power conversion efficiencies [1]. Metal oxide quantum dot (QD)/graphene composite based photovoltaic cells represent a promising photovoltaic technology because of their probability to exceed the Shockley-Queisser limit on single-junction energy extraction from the solar spectrum. Though, QD photovoltaic cells currently suffer from low photovoltaic efficiency because of poor electron-hole separation [2]. In this study, we investigate the photovoltaic properties of graphene/Sb,Os. 2. Experimental The graphene sample used in this study was prepared by a previously reported electrochemical exfoliation method [3]. SbzO; synthesized by using antimony pentachloride (bCl.) and sodium hydroxide (Nal!) through chemical precipitation process. First, they were mixed in 1:5 molar ratios in aqueous medium under constant stirring of 1h at room temperature (303 K). During this process, 2 g graphene was added in to reaction. In this way prepared composite dried at room temperature for over night and then sintered at 373 K for 5h. The Photovoltaic cell fabrication was done through screen-printing on ITO glass substrate (as transparent conducting electrode) of dimension 25 mm x 25 mm. The aluminium foil was used as metallic electrode. Diode properties of the solar cell were determined from measurements of current and voltage generated across the solar cell. 3. Results and discussion Fig. 1 depicts the XRD patterns of graphene/Sb,O; composite. There are two prominent peaks, (002) and (100) which are characteristic peaks of graphene [4]. The shoulder peak appears at 26.3 is attributed to Sb.O; particles. Pc ee ee 134: 20 Pain Fig. 1. XRD patterns of graphene/Sb,Os composite The Diode characteristics investigated for the prepared solar cell are open circuit voltage (Voc), short circuit current (Isc), fil factor (FF), maximum current output (In), maximum voltage output (Vx) and conversion efficiency (n). Fill factor and efficiency are determined using the ‘equations (1) and (2) [5] FRE hnwVinan)MlscVoo ay T= (ImaxVnex)/Pncsert (2) where Voc is open circuit voltage, Ise short circuit current, FF ie fil factor, Imax maximum current output, Vmax maximum voltage output, n efficiency and P incident is power of used radiation source. The measurement was done with 100W bulb radiating light at power of 0.0240 Wim? and room temperature of 303 K. The power of light from the bulb was measured by a luxmeter. The bulb- solar cell separation distance was 20cm. The current-voltage plot of the solar cell displayed in Fig. 2. The diode parameters Vcc, Is, Imax: Vnax and 1 for the solar cell listed in Table 1. em eretearen Vy, <00TO mV Current (uA) of —___|____ a 0.00 0.05 0.10 01s 0.20 Voltage (mV) Fig. 2 Currentvottage plot of the solar cel Table 1 The diode parameters Voc, Isc, Imax, Vmax and n for the graphene/Sb203 solar cell Voe Tee Tmax Vinax FF ia O2mV [33WA [32uA [OO7OMV [033 [112 (eno eee ee re4. Conclusions Fabrication of solar cells using screen-printing is very simple method. The solar cell had Voc of 0.2m, Isc of 3.3 WA, FF of 0.33 and efficiency of 11.2 %. Even though the efficiency of the solar cell fabricated was low, the availability and low cost of the materials makes it relatively affordable as compared to other cell devices. Acknowledgment Authors are very much thankful to Head, Department of Physics Sant Gadge Baba ‘Amravati University, Amravati References 4. HY. Chen, J. H. Hou, S. Q. Zhang, Y. Y. Liang, G. W. Yang, Y. Yang, L. P. Yu, Y. Wu and G. Li, Nat. Photon, 3 (2009) 649, J iw .¥ Xue, M_ Zhang and L. Dai, MRS bulletin, 37 (2012) 1265. R. G, Dubey, K. R. Nemade and S. A. Waghuley, Bismuth/graphene QDs solid state resistors for LPG sensor, NCLAM-2012 Y. Wu, B. Wang, Y. Ma, Y. Huang, N. Li, F. Zhang and Y. Chen, Nano. Res. 3 (2010) 661 E. 0. Omayio, P. M. Karimi, W. K. Njoroge and F. K. Mugwanga, Int. J. Thin Film Sci. Tec. 2 (2013) 26, Pennoni eee