Jomo Kenyatta University of Agriculture and Technology

Department of Electrical and Electronics Engineering

ETI 2203 Physical Electronics II
Laboratory Simulation Exercise
Due Date: TBD
Purpose
The objective of this exercise is to:
1) Familiarise the student with the use of electronic circuit design and simulation tools including the
following activities:
a) Schematic capture
b) Analysis using DC sweep and nested sweep.
c) Presenting results in graphical form.
2) Plot the Common Emitter (CE) output characteristics (IC vs VCE) of an NPN transistor with IB as input
parameter.
3) Use the characteristics to derive the parameters for the hybrid pi equivalent circuit for the bipolar
transistor.
4) Plot the Common Source (CS) output characteristics (ID vs VDS) of an N-Channel Enhancement MOSFET
with VGS as input parameter.
Deliverables – Exercise 1:
The student will be expected to hand in the following:
1) A printout of screen shot of graph from procedure item 6.
2) A printout of screen shot of graph from procedure item 7.
3) Results of the activities under procedure items 8 - 11.
4) A 5-page lab report detailing your findings
Equipment
Computer loaded with Multisim workbench.
Background
The BJT is a voltage controlled device, with the common emitter output current, iC being determined by the
base – emitter voltage, vBE. Because iC and vBE have an exponential relationship, there is very little change
in vBE for a very large change in iC. It is therefore often more convenient to consider the base current iB as
the controlling quantity. The relationship between iC and iB depends on the transistor operating mode, which
depends on the biasing arrangements for the two junctions in the BJT. The three forward operating conditions
are:
• Cut Off iC ≈ 0; iB ≈ 0≈ 0
• Active iC ≈ βiB
• Saturation iC < βiB
The MOSFET has an insulated gate and is therefore controlled 100% by voltage, since the gate current is
virtually zero. The output current, iD is controlled by the gate to source voltage, vGS. Like the BJT, the
MOSFET has three operating regions which are determined by the relationship between the voltages vGS,
vDS and vth.
• Cut Off vGS < vth; iD ≈ 0
• Ohmic vGS ≥ vth; vDS ≤ vGS - vth; iD = Constant * vDS
 • Saturation vGS ≥ vth; vDS > vGS - vth; iD ≈ K(vGS - vth)2.
The output characteristics of a MOSFET in common source configuration are a plot of iD against vDS, for a
number of different values of vGS. The three operating modes can be easily identified from the characteristics.

Multisim is a circuit simulation software with a wide large of electrical and electronics components. The
system can be used to create schematic circuits, carry out simulation of the circuit operation and even prepare
layouts for implementation of the circuit on printed circuit board. The simulator is derived from SPICE, a
simulation tool developed by the University of California, Berkeley. There are many forms of simulations,
include ac, dc, parameter sweep and DC sweep. A view of the user interface is presented in Figure 1.

Figure 1: Multisim User Interface

The main features are:
1) The Menu Bar is where you find commands for all functions.
2) The Design Toolbox is where you navigate through the different types of files in a project (schematics,
PCBs, reports), view a schematic’s hierarchy and show or hide different layers.
3) The Component toolbar contains buttons that you use to select components from the Multisim databases
for placement in your schematic.
4) The Standard toolbar contains buttons for commonly-performed functions such as Save, Print, Cut, and
Paste.
5) The View toolbar contains buttons for modifying the way the screen is displayed.
6) The Simulation toolbar contains buttons for starting, stopping, and other simulation functions.
7) The Main toolbar contains buttons for common Multisim functions.
8) The In Use List contains a list of all components used in the design.
9) The Instruments toolbar contains buttons for each instrument.
10) The Circuit Window (or workspace) is where you build your circuit designs.
11) The Spreadsheet View allows fast advanced viewing and editing of parameters including component
details such as footprints, RefDes, attributes and design constraints. You can change parameters for some
or all components in one step and perform a number of other functions.

The component toolbar is presented in Figure 2.

Figure 2: Components Toolbar

The icons/ buttons on the components toolbar are used to select components.
The circuits to be used in Exercise 1 and Exercise 2 are presented in Figure 3.

(a) (b)
Figure 3: Circuit for Output Characteristics for (a) BJT CE; (b) MOSFET CS

Exercise 1
In this exercise, DC sweep will be used to develop the output characteristics of an NPN BJT in common
emitter configuration. The circuit to be simulated is shown in Figure 3(a).
Multisim has a database with parameters for a lot of real components, including transistors. It also allows
selection of a virtual transistor. Multisim uses the Gummel Poon transistor model, which is an expansion of
the Ebers-Moll model to include high frequency characteristics. The model has a lot of parameters. In this
exercise, only a few key parameters will be specified, while the rest will be left at default value.
Procedure – Exercise 1
1. Getting Started:
a. Launch Multisim. A new design file, with a default named “Design 1”, will pop up.
b. Change the name of the design file to your name by selecting Select File»Save As.
c. Turn on the virtual components toolbar: Go to View»Toolbars» and click on Virtual. A virtual
components toolbar will appear alongside the components toolbar.

2. Placing the Components. Components can be selected by name using search, or using the shortcuts on
the components toolbars. The second method involves clicking on the appropriate button on the
components toolbar.
 a. Place the BJT. In the components toolbar, click on the transistor button, . Select Place BJT
2N2222

b. Place a DC current Source: Click on the Signal sources button on the virtual components toolbar
and select Place DC Current Source.
c. Place a DC Voltage Source: Click on the Power sources button on the virtual components toolbar

and select Place DC Power Source.

d. Place a ground (NOTE: Circuit must contain a ground connection (zero reference) for simulation to

run). Click on the Power sources button on the virtual components toolbar and select Place
Ground.
3. Align components and complete wiring;
a. Select and drag the components to the locations appropriate for circuit layout.
b. Make wiring connections between the components:
i. Click on a pin in the first component – the mouse pointer turns into cross-hairs. Release mouse
button and move the cross-hairs to a pin on the component you want to connect to and click again.
A wire connection will be installed.
ii. Continue until the complete circuit is wired. Do not forget to connect the ground.
c. Connecting two wires at one point: It is not possible to make multiple connections to a pin unless it
is connecting to a pin without any connections. This may cause difficulties when wiring the ground
connections. It is recommended that wiring always starts at a pin without any other connections.
4. Net names: The simulator automatically assigns a numerical net name to each node. This can be
automatically changed to more appropriate names by double clicking on the number and entering the
desired name. For example, the base node could be named B while the collector note is named C. The
emitter node will be automatically named 0 because it is connected to ground and this cannot be changed.
The colour of the connections can be set for individual nets.
5. Component labels: Component labels can be amended by double clicking on the component and entering
the desired label as Component Designator.
a. Change the name of the BJT to be Q1
b. Change the name of the current source to be IB
c. Change the name of the voltage source to be VCE.
6. Single Sweep Analysis: This step gives a plot of IC vs VCE for a single value of VBE.
a. On the Menu, select Simulate»Analyses»DC Sweep. The analysis settings window will pop up.
b. Set analysis as:
i. Analysis Parameters: Source: VCE; Start Value: 0V; Stop Value: 10V; Increment: 0.05V.
ii. Output: Under ‘Variables in Circuit’ select I(Q1[IC]), click Add to add it to ‘Selected variable
for analysis’.
iii. Click on ‘Simulate’.
c. A window with a graph will pop up when simulation is complete. The background can be changed

to white by clicking the toolbar icon with nested white and black boxes .
7. Nested Two Level Sweep: This will plot a family of output characteristics for the BJT.
a. On the Menu, select Simulate»Analyses»DC Sweep. The analysis settings window will pop up.
b. Retain VCE settings as they were. Make the following changes:
i. Tick the box that says ‘Use Source 2’.
 ii. Set Source 2 Settings as: Source: IB; Start Value: 0E-6; Stop Value: 120E-6; Increment: 15E-6.
iii. Click on ‘Simulate’.
c. A window with a graph will again pop up. Change to a light background as for earlier exercise.
8. On the characteristics, sketch the load line for VCC = 10V and RC = 470Ω.
9. Identify the quiescent point parameters for VCE = 5V.
10. Using the characteristics in item 8, evaluate the parameters for the low frequency hybrid π model (in Page 58
of the notes) BJT if the operating point as seleBJT if the operatin
11. Maintain a copy of the characteristics for use in the lab exercise in EMB.

Exercise 2
In this exercise, DC sweep will be used to develop the output characteristics of an N-Channel Enhancement
MOSFET in common source configuration. The circuit to be simulated is shown in Figure 3(b).
Deliverables – Exercise 2:
The student will be expected to hand in the following:
1) A printout of screen shot of graph from procedure item 6.
2) A printout of screen shot of graph from procedure item 7.
3) Answers to the question under procedure item 8.
4) A 5-page lab report detailing your findings
Procedure – Exercise 2
1. Getting Started:
a. Launch Multisim. A new design file, with a default named “Design 1”, will pop up.
b. Change the name of the design file to your name by selecting Select File»Save As.
c. Turn on the virtual components toolbar: Go to View»Toolbars» and click on Virtual. A virtual
components toolbar will appear alongside the components toolbar.

2. Placing the Components. Components can be selected by name using search, or using the shortcuts on
the components toolbars. The second method involves clicking on the appropriate button on the
components toolbar.
a. Place the BJT. In the components toolbar, click on the transistor button, . Select Place MOSFET
ZVN 3306A.
b. Place a DC Voltage Source for Gate Supply: Click on the Signal sources button on the virtual

components toolbar and select Place DC Power Source.

c. Place a DC Voltage Source for Drain to Source supply: Click on the Power sources button on the

virtual components toolbar and select Place DC Power Source.

d. Place a ground (NOTE: Circuit must contain a ground connection (zero reference) for simulation to

run). Click on the Power sources button on the virtual components toolbar and select Place
Ground.
3. Align components and complete wiring;
a. Select and drag the components to the locations appropriate for circuit layout.
b. Make wiring connections between the components:
 i. Click on a pin in the first component – the mouse pointer turns into cross-hairs. Release mouse
button and move the cross-hairs to a pin on the component you want to connect to and click again.
A wire connection will be installed.
ii. Continue until the complete circuit is wired. Do not forget to connect the ground.
c. Connecting two wires at one point: It is not possible to make multiple connections to a pin unless it
is connecting to a pin without any connections. This may cause difficulties when wiring the ground
connections. It is recommended that wiring always starts at a pin without any other connections.
4. Net names: The simulator automatically assigns a numerical net name to each node. This can be
automatically changed to more appropriate names by double clicking on the number and entering the
desired name. For example, the base node could be named B while the collector note is named C. The
emitter node will be automatically named 0 because it is connected to ground and this cannot be changed.
The colour of the connections can be set for individual nets.
5. Component labels: Component labels can be amended by double clicking on the component and entering
the desired label as Component Designator.
a. Change the name of the MOSFET to be M1
b. Change the name of the Gate power supply to be VGS
c. Change the name of the Drain – Source power supply to be VDS.
6. Single Sweep Analysis: This step gives a plot of ID vs VDS for a single value of VGS.
a. On the Menu, select Simulate»Analyses»DC Sweep. The analysis settings window will pop up.
b. Set analysis as:
i. Analysis Parameters: Source: VDS; Start Value: 0V; Stop Value: 8V; Increment: 0.05V.
ii. Output: Under ‘Variables in Circuit’ select I(M1[ID]), click Add to add it to ‘Selected variable
for analysis’.
iii. Click on ‘Simulate’.
c. A window with a graph will pop up when simulation is complete. The background can be changed

to white by clicking the toolbar icon with nested white and black boxes .
7. Nested Two Level Sweep: This will plot a family of output characteristics for the MOSFET.
a. On the Menu, select Simulate»Analyses»DC Sweep. The analysis settings window will pop up.
b. Retain VDS settings as they were. Make the following changes:
i. Tick the box that says ‘Use Source 2’.
ii. Set Source 2 Settings as: Source: VGS; Start Value: 0; Stop Value: 3; Increment: 0.5.
iii. Click on ‘Simulate’.
c. A window with a graph will again pop up. Change to a light background as for earlier exercise.
8. On a copy of the characteristics:
a. Label the operating regions for the MOSFETS.
b. Sketch the boundary between the Ohmic region and the Saturation region, and give an equation for
the boundary line.

References
1) Electronics WorkbenchTM: MultisimTM 8 Simulation and Capture: User Guide, Austin, Tx, National
Instruments, 2005.
2) Paul W. Tuinenga, SPICE: A Guide to Circuit Simulation & Analysis using PSpice, Englewood Cliffs,
New Jersey, Prentice Hall,