Due to Doping. d| impweity. atom 4 indium, some aliswed envy jevele cou producsd in band gap Slightly. Above Hu VB. Thuse Jevels Adu Cablid Accaptor level. As cudn_, forbidden erungy gap dictates . Ince extent. Semuiconlluttey , uu hove n-type Semi conductor — hn & Amall amsunt 4| pentavalire ima put, is addlie) +0 om) inthinsic Semiconductor tun Hu senu condutey ik Cobbul n-type Armiconductor. Thy valaey of phos- Phowc if 5 fe Tt har 5 Nabince elbtetone Te impusiby Olom wail fuplase Hs Si afte but of fu 5 valine olushous of Impodiy. , { make covalad beusl nih Ue o| eign bsuring. Si abo. Th 5H Ip viup loosely. bound cuit Ha Pount impurtiy atm omd ia fsee fo move. Thi si @ of imputuly ta dunotid to Hy coystal chuctuve . In tals type gf exhrins Sond COudlevlers magprity Chunge Cawiers atu eliehon whit osu mugabive . So it in cobb n-type Srp Conduske omnd tu impardly doled in Cablud (clomor Tvpwsiby) dlonoy atom,oN . Lactrons a P SOCeOT Oe . are 7 () O-0 ad BOS OLOE () -Q —C)_ Mer? SH OTSE 0) () ©) In_ N-type Semi conduct , mapas, charge Codcvert Bu elubrons onl minotiky chonge Codvciert are Holes, Ce [oy SSS TT Y oosev Ni ITH HTT Eyrinsie Nox Wh = Mh Inbring it Nee Np = Nj Tha fh No charge On p-type Or NV tube Crydal due to pudisribuben of chinge in crysiad. Diffwune bikween Intrinsic & Exbinsic send Comobuctor Fratyasie E buncic ci ain free Prom | (hy Tt iA Inopudd Saved Coder omy kird of Lm pod ty | tobi ch Cans tel ycivabl antunt of ern,(iy Number A ebdeani Covalud bond amd holet ty valance bard osueqsl th Leur, in | diy Number 4 holer ome Olichont asa np} egpal. i) Ebactal Conductuity | diy Ehebical conduchusby. ia Wig. cv Electrica comduc Huy | civ) Elubicl coudustiuity YA a (4 0 efumeligw of eupaatwre punedion rf kemprahyre cy wl OL cyuantiy pity od tN —OC— n-type Semi conductor (i) Thy, oda obama by- pont bb innpusily to O Semi Haduuter. (hy Dpwuky Otome Osu callsd Dewar tybe ‘Tmpwairy (hy Magoruty chasge Codsciers osu e decks omd holes Ody minokity Charye Camas (tv) Cursed fA due to flocs y} elachons p-type Semiconductor Gy oou objained nadia Arivaby impusiey to a Semicouductes (ii) Dmpunity Atoms osu calbd ACCEPTOR “Type Tmpwaly (i) Magoity Charge Comsient Odu holes ond winntei Charge Cawiert osu ebohont (yy Current in sualy Coytted va due fp holer shiting iv Coyted. 9Eductrical conduckiby, 4 exbrinsic ona cousucter =3 Te = Ih i ——_—t— ee Lot us considey Q block of extrinsic Conductor of Osun A Omi engin t. ne ond ny, be tu elictrgns omd hole dhvuity ie number a elichons o% holer pev unt \jolume. When potential cuiffasunce ix applied acwost Hw conductor, holes omd ehehon shart, to deift in oppestte dracon Lak We ta ta Orvift valod Hy 4 Charon ond Wy, tA that of hole. Total curveut in Ww Cyouil fh Ru sum f Currear of noler omd due fo elictrons. T= Te +Ty, Te Net Ave + NCA, Le en (Neve + M4 Va) 5 = 2 ( Ne’e + MY) N/R 2 @ (Me Ve +My 984) (F V218) A Vb = € (MeBe + ny wy) Cr R= pL HW (Ne Thy 1») ( nm) BS E = (nem mY) (7° ¥) >Ipee (B+ mB) ule - 2 Coudlauch ity. (c) T= e (ne He + Ny, Hy) Here ue= BE ik cabbd mobility of ebiceons My= Sa incolbd rmobibity { holes. Ac Hu femprative Sew Cousluckey incguater Hu nulaber dunsiy. of tu elictront ond Woler incduaser Oma hence, Hu Chuducttuiy 4 Semi Couswuler aleo incsuacer