OG PHILIPS INTERNATIONAL SbE D MM 7110826 OO42630 632 MEPHIN Phillpe Semiconductors T-25-09 Dataset 2N2646 paen_[Priney eet"! “Silicon unijunction transistor te cteum [cote 00 QUICK REFERENCE DATA SYMBOL PARAMETER conomions [win | Te | wax | oT Ve | eitarbase 2 vonage ES a CN Tex | enitercurent ewrabe —(-_|- 2 Ja Puy [ta power cspaton = [= fa 7 junction temperature 7 = is fo Fe | sta tr ase reliance i sa A TT Vans | iterbase f sauralonvetoge —|Vaq,aT0V [= 8] les 50mA Teneo vay pant corart P| = key [emit peak por curent a oa PINNING -To-18 IN CONFIGURATION Basa 2 connected to case PIN[ DESCRIPTION 1 [emir 2 [base [ease Fg Simple oun and symbolPhilips Semiconductors Preliminary specication Silicon unijunction transistor 2N2646 PHILIPS INTERNATIONAL LiwiriNa VALUES To25-0 In accordance wit the Absolute Mesimum System (EC 194). nam SYMBOL PARAMETER conomons | min. [ MAX, | UNT 7 miter base 2 vatago = ov inler-base voliage = sv i [emitereurent [average valve 5 50 [ma i [emitereurent (note 1p peak value = fa A total power dlsiation (note 2) Tora 325°C = [300__[ mi i storage toiperaiur range ee int Junction temperature E 25 fc 1. Capacitor dlscharge $10 uF at 90 V. io 2, Mast be mited by extemal creu EL NI G Sarnia Fig2 Power erating cuve, ‘THERMAL RESISTANCE. ‘SYMBOL PARAMETER VALUE | _ UNIT Fae rem uncon to arblont 300 iow Dacember 1980 736Philips Semiconductors Preliminary specication Silicon unijunction transistor 2N2646 PHILIPS INTERNATIONAL SbE D MM 7110826 004232 4O4 MMPHIN (CHARACTERISTICS. They = 25 °C unless otherwise spactd. ‘SYMBOL, PARAMETER conomons | win. [tye | Max. | UNIT R, stale intar base esitance Vaa= 3 ait Ru aa a lend TCyyp | torbase resistance paraiso |Vggy= 3 jo; j= joa |e coetcent ke=0 Tag = $510 125°C “laws | oiter cutoff current aaa enn Venus [emitlrbase 1 saluration vekage San sai ean Temes | torbase cunt medualon Tm S| fa inputioupt rato rota 1) Veni = 100 ose [- ove ees miter valley point current Vase: =20V ie fe |- lw en emitter poak pot aurent fh A [Venu [Base 7 inpulse/output voltage ENG CN eT Note 1. Wan=Veu) * = Zep “te? when Ver, = emiter peak pont voltage, Van = amiter-bese 1 breakcown vollage, {epproximatey 0.5 Vat 10 uA), and Vag = ntarbase voltage. Fig Impulse asa function of ouput voltage. Fig Impulse ouput crit, Docembar 1990 735Philips Semiconductors Proliinary specication 2N2646, Silicon unijunction transistor PHILIPS INTERNATIONAL SbE D MM 7220826 0042613 340 MMPHIN PACKAGE OUTLINE ees 25-09 Dimensions in mm. Figs TO18. “ Dooomber 1990 6