Homework-1 (Semiconductor devices)

[Due: 25th Nov 2022, Friday]

1. What is Hall effect? How is it useful in determining the carrier concentration in a doped
semiconductor?
2. Derive the continuity equations for electrons and holes. Describe the significance of each term
in the resulting equations.
3. Set up the continuity equations for an n-type semiconductor where excess carriers are injected
from one side as a result of light illumination. Assume that the light penetration is negligibly
small.

4. Set up the continuity equations for an n-type semiconductor where excess carriers are injected
from one side as a result of light illumination. Assume that the light penetration is negligibly
small.

5. Draw the small signal equivalent circuit of a p-n diode, and describe each components.
6. Describe (a) Zener breakdown, (b) Avalanche breakdown.
7. Derive the expression for β (common emitter current gain) in terms of transistor parameters.
8. Derive the expression for the depletion widths along n-side and p-side of a p-n junction
9. Using a diagram, show the various current components flowing across the junctions of an npn
transistor under active mode of operation. In this figure, also label the transistor terminal
currents
10. Draw and explain the CV characteristics of a MOS capacitor (formed on p substrate) and label the
various accumulation, depletion and inversion regions.
11. In our life, we all might have faced difficult and depressing situations. These might try to
prevent our progress; however, we might have some motivating factors in our life which drives
us forward. Some might be internal, while others could be external. For you, what drives you
forward? When you are feeling low, how do you gather your motivation?
12. What are the pros and cons of Semiconductor device lectures? What should be done to improve
the quality of the lectures?