Sheet1

1- What names are applied to the two types of BJT transistors? Sketch the basic
construction of each and label the various minority and majority carriers in each.
Draw the graphic symbol next to each. Is any of this information altered by changing
from a silicon to a germanium base?

2-How must the two transistor junctions be biased for proper transistor amplifier
operation?

3-(a) Using the characteristics of Fig. 2, determine the resulting collector current if
IE 3 mA and VCB 10 V.

(b) Using the characteristics of Fig. 2, determine the resulting collector current if IE
remains at 3 mA but VCB is reduced to 2 V.

(c) Using the characteristics of Figs. 1 and 2, determine VBE if IC 4 mA and VCB 20
V.

(d) Repeat part (c) using the characteristics of Figs. 1 and 2.

4-(a) Using the characteristics of Fig. 3, determine IC at IB 30 µA and VCE

10 V.

(b) Using the characteristics of Fig. 3, determine IC at VBE 0.7 V and VCE
15 V.

5-Using the characteristics of Fig. 2, determine VBE at IE 5 mA for VCB 1, 10, and 20
V.Is it reasonable to assume on an approximate basis that VCB has only a slight effect
on the relationship between VBE and IE?