TGA2817-SM

®
S-Band 60 W GaN Power Amplifier

General Description
Qorvo’s TGA2817-SM is a high-power, S-band amplifier
fabricated on Qorvo’s TQGaN25 0.25 um GaN on SiC TGA2817
production process. Covering 2.9-3.5 GHz, the TGA2817- YYWW
SM provides > 48 dBm of saturated output power and MXXX
> 24 dB of large-signal gain while achieving > 54 % power
added efficiency.

The TGA2817-SM can also support a variety of operating

conditions to best support system requirements. With good
thermal properties, it can support a range of bias voltages
and will perform well under pulse applications. The
TGA2817-SM is matched to 50 ohms with integrated DC Product Features
blocking caps on both I/O ports. It is ideal for use in both
commercial and military radar systems. • Frequency Range: 2.9–3.5 GHz
• POUT: > 48 dBm (at PIN = 24 dBm)
Lead-free and RoHS compliant • Large Signal Gain: > 24 dB (at PIN = 24 dBm)
• PAE: > 54 % (at PIN = 24 dBm)
• Bias: VD = 28 V, IDQ = 200 mA
• Package Dimensions: 7.00 x 7.00 x 0.85 mm

Functional Block Diagram

Applications
48

47

46

45

44

43

42

41

40

39

38

37

• Military Radar
1 36
• Commercial Radar
2 35

3 34

4 33

5 32

RF IN 6 31 RF OUT

RF IN 7 30 RF OUT

8 29

9 28

10 27

11 26

12 25
13

14

15

16

17

18

19

20

21

22

23

24

Ordering Information
Part Description
TGA2817-SM S-Band 60 W GaN Power Amplifier
TGA2817-SM_EVB TGA2817-SM Evaluation Board

Data Sheet Rev B, October 2019 | Subject to change without notice 1 of 13 www.qorvo.com
 TGA2817-SM
®
S-Band 60 W GaN Power Amplifier

Absolute Maximum Ratings Recommended Operating Conditions

Parameter Value/Range Parameter Value/Range
Drain Voltage (VD) 40 V Drain Voltage (VD) 28 V
Drain Current (ID1/ID2) 1.4 / 5.8 A Drain Current (quiescent, IDQ) 200 mA
Gate Current (IG) See graph, page 8 Drain Current (under drive ,ID_DRIVE) 4.6 A
Dissipated Power (PDISS) 92 W Gate Voltage Range (VG) −2.8 to −2.0 V
Input Power: 50 Ω, 85 °C (1) 30 dBm Operating Temperature −40 to 85 °C
(1)
Input Power: 3:1 VSWR, 85 °C 28 dBm Electrical specifications are measured at specified test
Soldering Temperature 260 °C conditions. Specifications are not guaranteed over all
Storage Temperature −55 to 150 °C recommended operating conditions.

Notes:
1. Based on die performance.

Operation of this device outside the parameter ranges given

above may cause permanent damage.

Electrical Specifications
Test conditions, unless otherwise noted: 25 °C, VD = 28 V, IDQ = 200 mA, Pulse Width = 100 us, Duty Cycle = 10%

Parameter Condition Min Typical Max Units

Operational Frequency 2.9 3.5 GHz
Output Power (PIN = 24 dBm) 2.9 GHz 47.2 48 dBm
3.1 GHz 47.2 48 dBm
3.3 GHz 47.4 48 dBm
Power Added Efficiency (PIN = 24 dBm) 2.9 GHz 49.5 54 %
3.1 GHz 48.0 54 %
3.3 GHz 47.0 54 %
Large Signal Gain (PIN = 24 dBm) 24 dB
Input Return Loss >8 dB
Gate Leakage (VD = 10 V, VG = −3.7 V) −30.6 −0.46 −0.0001 mA
Output Power Temperature Coefficient −0.006 dBm/°C

Data Sheet Rev B, October 2019 | Subject to change without notice 2 of 13 www.qorvo.com
 TGA2817-SM
®
S-Band 60 W GaN Power Amplifier

Typical Performance
Test conditions unless otherwise noted: Temp. = 25 °C

Gain vs. Freq. vs. Temp. Gain vs. Frequency vs. VD

30 23
VD = 28 V IDQ = 200 mA, T = 25 °C
IDQ = 200 mA 21
25
19
20 17
S21 (dB)

S21 (dB)
15
15
13
10 11
24 V
9 26 V
5
7 28 V
-40C +25C +85C
30 V
0 5
2.5 2.8 3.1 3.4 3.7 4.0 2.5 2.8 3.1 3.4 3.7 4.0
Frequency (GHz) Frequency (GHz)

Input RL vs. Freq. vs. Temp. Input RL vs. Frequency vs. VD

0 0
VD = 28 V, IDQ = 200 mA IDQ = 200 mA, T = 25 °C
-5 -5

-10 -10
S11 (dB)

S11 (dB)

-15 -15

-20 -20
24 V
26 V
-25 -25
28 V
-40C +25C +85C
30 V
-30 -30
2.5 2.8 3.1 3.4 3.7 4.0 2.5 2.8 3.1 3.4 3.7 4.0
Frequency (GHz) Frequency (GHz)

Output RL vs. Freq. vs. Temp. Output RL vs. Frequency vs. VD

0 0
VD = 28 V, IDQ = 200 mA IDQ = 200 mA, T = 25 °C

-5 -5

-10 -10
S22 (dB)
S22 (dB)

-15 -15

-20 -20
24 V
-25 26 V
-25
-40C +25C +85C 28 V
-30 30 V
-30
2.5 2.8 3.1 3.4 3.7 4.0 2.5 2.8 3.1 3.4 3.7 4.0
Frequency (GHz) Frequency (GHz)

Data Sheet Rev B, October 2019 | Subject to change without notice 3 of 13 www.qorvo.com
 TGA2817-SM
®
S-Band 60 W GaN Power Amplifier

Typical Performance
Test conditions unless otherwise noted: Temp. = 25 °C

Gain vs. Frequency vs. IDQ Input RL vs. Freq. vs. IDQ
35 0
VD = 28 V, T = 25 °C VD = 28 V, T = 25 °C
30 -5
25
-10

S11 (dB)
S21 (dB)

20
-15
15
-20
10
200 mA 200 mA
5 -25
400 mA 400 mA
600 mA 600 mA
0 -30
2.5 2.8 3.1 3.4 3.7 4.0 2.5 2.8 3.1 3.4 3.7 4.0
Frequency (GHz) Frequency (GHz)

Output RL vs. Freq. vs. IDQ

0
VD = 28 V, T = 25 °C
-5

-10
S22 (dB)

-15

-20
200 mA
-25 400 mA
600 mA
-30
2.5 2.8 3.1 3.4 3.7 4.0
Frequency (GHz)

Data Sheet Rev B, October 2019 | Subject to change without notice 4 of 13 www.qorvo.com
 TGA2817-SM
®
S-Band 60 W GaN Power Amplifier

Typical Performance
Test conditions unless otherwise noted: Temp. = 25 °C, Pulsed input power PW = 100 us, Duty Cycle = 10%

Output Power vs. Freq. vs. Temp. Output Power vs. Freq. vs. Input Power
52 50
VD = 28 V, IDQ = 200 mA, PIN = 24 dBm VD = 28 V, IDQ = 200 mA, T = 25 °C

50 49
Output Power (dBm)

Output Power (dBm)

48 48

46 47 22 dBm
23 dBm
44 -40 deg C 46 24 dBm
+25 deg C 25 dBm
+85 deg C 26 dBm
42 45
2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5
Frequency (GHz) Frequency (GHz)

Power Added Eff. vs. Freq. vs. Temp. Power Added Eff. vs. Freq. vs. Input Power
65 62
VD = 28 V, IDQ = 200 mA, PIN = 24 dBm VD = 28 V, IDQ = 200 mA, T = 25 °C
60 60
Power Added Eff. (%)

Power Added Eff. (%)

58
55
56
50
54
22 dBm
45 23 dBm
52
-40 deg C 24 dBm
40 +25 deg C 50 25 dBm
+85 deg C 26 dBm
35 48
2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5
Frequency (GHz) Frequency (GHz)

Drain Current vs. Freq. vs. Temp. Drain Current vs. Freq. vs. Input Power
6.0 6.0
VD = 28 V, IDQ = 200 mA, PIN = 24 dBm VD = 28 V, IDQ = 200 mA, T = 25 °C
5.5 5.5
Drain Current (A)

Drain Current (A)

5.0 5.0

4.5 4.5

4.0 4.0

3.5 3.5 22 dBm

23 dBm
3.0 -40 deg C 3.0 24 dBm
2.5 +25 deg C 2.5 25 dBm
+85 deg C 26 dBm
2.0 2.0
2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5
Frequency (GHz) Frequency (GHz)

Data Sheet Rev B, October 2019 | Subject to change without notice 5 of 13 www.qorvo.com
 TGA2817-SM
®
S-Band 60 W GaN Power Amplifier

Typical Performance
Test conditions unless otherwise noted: Pulsed input power PW = 100 us, Duty Cycle = 10%

Output Power vs. Input Power vs. Freq. PAE vs. Input Power vs. Freq.
60 70
VD = 28 V, IDQ = 200 mA, Temp. = 25 °C VD = 28 V, IDQ = 200 mA, Temp. = 25 °C
55
60
50
Output Power (dBm)

Power Added Eff. (%)

45 50
40 40
35
30 30

25 20
20 2.9 GHz 2.9 GHz
3.1 GHz 10 3.1 GHz
15
3.3 GHz 3.3 Ghz
10 0
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30
Input Power (dBm) Input Power (dBm)

Gain vs. Input Power vs. Freq. Drain Current vs. Input Power vs. Freq.
50 6
VD = 28 V, IDQ = 200 mA, Temp. = 25 °C VD = 28 V, IDQ = 200 mA, Temp. = 25 °C
45
5
40
Drain Current (A)

35
4
Gain (dB)

30
25 3
20
2
15
10 2.9 GHz 2.9 GHz
3.1 GHz 1 3.1 GHz
5
3.3 GHz 3.3 GHz
0 0
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30
Input Power (dBm) Input Power (dBm)

Gate Current vs. Input Power vs. Freq.

8
VD = 28 V, IDQ = 200 mA, Temp. = 25 °C
7
Gate Current (A)

2 2.9 GHz
3.1 GHz
1 3.3 GHz
0
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30
Input Power (dBm)

Data Sheet Rev B, October 2019 | Subject to change without notice 6 of 13 www.qorvo.com
 TGA2817-SM
®
S-Band 60 W GaN Power Amplifier

Typical Performance
Test conditions unless otherwise noted: Pulsed input power PW = 100 us, Duty Cycle = 10%

Output Power vs. Input Power vs. Temp. PAE vs. Input Power vs. Temp.
60 70
VD = 28 V, IDQ = 200 mA, Freq. = 3.1 GHz VD = 28 V, IDQ = 200 mA, Freq. = 3.1 GHz
55
60
50
Output Power (dBm)

Power Added Eff. (%)

45 50
40 40
35
30 30

25 20
20 -40 deg C -40 deg C
+25 deg C 10 +25 deg C
15
+85 deg C +85 deg C
10 0
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30
Input Power (dBm) Input Power (dBm)

Gain vs. Input Power vs. Temp. Drain Current vs. Input Power vs. Temp.
50 6
VD = 28 V, IDQ = 200 mA, Freq. = 3.1 GHz VD = 28 V, IDQ = 200 mA, Freq. = 3.1 GHz
45
5
40
Drain Current (A)

35
4
Gain (dB)

30
25 3
20
2
15
10 -40 deg C -40 deg C
+25 deg C 1 +25 deg C
5
+85 deg C +85 deg C
0 0
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30
Input Power (dBm) Input Power (dBm)

Gate Current vs. Input Power vs. Temp.

8
VD = 28 V, IDQ = 200 mA, Freq. = 3.1 GHz
7
Gate Current (A)

2 -40 deg C
+25 deg C
1 +85 deg C
0
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30
Input Power (dBm)

Data Sheet Rev B, October 2019 | Subject to change without notice 7 of 13 www.qorvo.com
 TGA2817-SM
®
S-Band 60 W GaN Power Amplifier

Thermal and Reliability Information

Parameter Test Conditions Value Units
Thermal Resistance (θJC) (1) TBASE = 85 °C, VD = 28 V, ID = 200 mA (quiescent DC, 0.396 °C/W

Channel Temperature (TCH) (2) small signal), PDISS = 6.4 W 87.5 °C

Thermal Resistance (θJC) (1) TBASE = 85 °C, VD = 28 V, ID = 4.5 A, PIN = 24 dBm 0.476 °C/W
POUT = 48.5 dBm, PW = 100 us, DC = 10%,
Channel Temperature (TCH) (2) PDISS = 53 W 110.2 °C

Thermal Resistance (θJC) (1) TBASE = 85 °C, VD = 32 V, ID = 5.1 A, PIN = 24 dBm, 0.492 °C/W
POUT = 49.4 dBm, PW = 100 us, DC = 10%,
Channel Temperature (TCH) (2) PDISS = 74 W 121.4 °C

Notes:
1. Thermal resistance is determined to the back of the package (at 85 °C).
2. IR scan equivalent. Refer to the following document: GaN Device Channel Temperature, Thermal Resistance, and Reliability
Estimates

Power Dissipation and Maximum Gate Current

TGA2817-SM Pdiss vs. Frequency TGA2817-SM Ig_max vs. TCH vs. Stage
80 160

70 140
Maximum Gate Current (mA)

60 120
Disspiated Power (W)

Stage 1
100 Stage 2
50
Total Ig
40 80

30 60
24V 100us 10% 25C
20 40
28V 100us 10% 25C
10 30V 100us 10% 25C 20
Pin = 24 dBm 32V 100us 10% 25C
0 0
2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 110 120 130 140 150 160 170 180
Frequency (GHz) Channel Temperature ( C)

Data Sheet Rev B, October 2019 | Subject to change without notice 8 of 13 www.qorvo.com
 TGA2817-SM
®
S-Band 60 W GaN Power Amplifier

Application Circuit
R1
0Ω
VG VD
C4 1000 pF
C6 1000 pF
C1
10 uF
C11
C3 1000 pF C5 1000 pF

48

46

44

38
1.0 uF
C12
1.0 uF

J1 6, 7 30, 31 J2
RF IN RF OUT
13

15

17

23
C14
1.0 uF
C13 C7 1000 pF C9 1000 pF
1.0 uF
C2
10 uF
C10 1000 pF
C8 1000 pF
VG VD
R2
0Ω

Notes:
1. VG and VD must be biased from both sides (top and bottom).

Bias-up Procedure Bias-down Procedure

Set ID limit to 6000 mA, IG limit to 40 mA Turn off RF signal
Set VG to −6.0 V Reduce VG to −6.0 V. Ensure IDQ ~ 0 mA
Set VD +28 V Set VD to 0 V
Adjust VG more positive until IDQ = 200 mA Turn off VD supply
Apply RF signal Turn off VG supply

Data Sheet Rev B, October 2019 | Subject to change without notice 9 of 13 www.qorvo.com
 TGA2817-SM
®
S-Band 60 W GaN Power Amplifier

Evaluation Board and Mounting Detail

R1
C1

C11 C12

C3 C4 C5 C6

C7 C8 C9 C10

C13 C14

C2
R2

RF Layer is 0.008” thick Rogers Corp. RO40003C (r = 3.35). Metal layers are 0.5 oz. copper. The microstrip line at the connector
interface is optimized for the Southwest Microwave end launch connector 1092-02A-5.

Reference Design Component Value Manufacture Part Number

C1, C2 Surface Mount Cap 10 uF, 20 %, 50 V (1206), X5R Various
C3–C10 Surface Mount Cap 1000 pF, 10 %, 50 V (0402), X7R Various
C11–C14 Surface Mount Cap 1.0 uF, 10 %, 25 V (0402), X7R Various
R1, R2 Surface Mount Res 0 Ohm, 5 % (0603) Various

Data Sheet Rev B, October 2019 | Subject to change without notice 10 of 13 www.qorvo.com
 TGA2817-SM
®
S-Band 60 W GaN Power Amplifier

Mechanical Drawing and Pad Description

TGA2817
YYWW
MXXX

Package Leads are Gold Plated

Part is Mold Encapsulated
Dimensions are in mm
Tolerances: .XX = ± .25, .XXX = ± .127
Markings:
TGA2817: Part Number
YY: Assembly Year
WW: Assembly Week
MXXX: Batch ID

Pad No. Symbol Description

1-5, 8-12, 14, 16, 18-22, 24-29, 32-
GND Ground connection.
37, 39-43, 45, 47, 49
6, 7 RF Input 50 Ohm RF input. Pad is capacitively coupled to block on-chip DC voltages.
1st Stage Gate Voltage; bias network is required; must be biased from both
13, 48 VG1
sides (VG1 and VG2 can be tied together in application)
1st Stage Drain Voltage; bias network is required; must be biased from both
15, 46 VD1
sides (VD1 and VD2 can be tied together in application)
2nd Stage Gate Voltage; bias network is required; must be biased from both
17, 44 VG2
sides (VG1 and VG2 can be tied together in application)
2nd Stage Drain Voltage; bias network is required; must be biased from both
23, 38 VD2
sides (VD1 and VD2 can be tied together in application)
50 Ohm RF output. Pad is capacitively coupled to block on-chip DC voltages.
30, 31 RF Output
Pad is DC grounded.

Data Sheet Rev B, October 2019 | Subject to change without notice 11 of 13 www.qorvo.com
 TGA2817-SM
®
S-Band 60 W GaN Power Amplifier

Recommended Soldering Temperature Profile

Data Sheet Rev B, October 2019 | Subject to change without notice 12 of 13 www.qorvo.com
 TGA2817-SM
®
S-Band 60 W GaN Power Amplifier

Handling Precautions
Parameter Rating Standard Caution!
ESD - Human Body Model (HBM) 1C JEDEC/JS-001-2014 ESD-Sensitive Device
ESD- Charge Device Model (CDM) C3 JEDEC/JS-002-2014
MSL - Moisture Sensitivity Level MSL3 JEDEC/IPC/JEDEC J-STD-020

Solderability
Compatible with the latest version of J-STD-020 Lead Free solder, 260 °C.

RoHS Compliance
This part is compliant with 2011/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and
Electronic Equipment) as amended by Directive 2015/863/EU.

This product also has the following attributes:

• Lead Free
• Halogen Free (Chlorine, Bromine)
• Antimony Free
• TBBP-A (C15H12Br402) Free
• PFOS Free
• SVHC Free

Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations.
Web: www.qorvo.com
Tel: 1-844-890-8163
Email: customer.support@qorvo.com

Important Notice
The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information contained
herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All information contained
herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for
Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any
patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by
such information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS DESCRIBED
HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS WHETHER
EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR OTHERWISE,
INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE.

Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical components in medical,
life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal
injury or death.

Copyright 2019 © Qorvo, Inc. | Qorvo is a registered trademark of Qorvo, Inc.

Data Sheet Rev B, October 2019 | Subject to change without notice 13 of 13 www.qorvo.com
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