CHENMKO ENTERPRISE CO.

,LTD
CH521S-30GP
SURFACE MOUNT
SCHOTTKY BARRIER DIODE
VOLTAGE 30 Volts CURRENT 0.2 Ampere

APPLICATION
* Low current rectification and high speed switching

FEATURE SC-79/SOD-523
* Extremely small surface mounting type. (SC-79/SOD-523)
* Io=200mA guaranteed despite size
Cathode
* Low VF. (VF=0.40V Typ. at 200mA)
(1) (2)
0.25~0.35 0.75~0.85

CONSTRUCTION 1.1~1.3
* Silicon epitaxial planar

MARKING
*C
0.5~0.77
0.07~0.17

CIRCUIT (2) 1.5~1.7

(1) Dimensions in millimeters SC-79/SOD-523

MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted )

RATINGS SYMBOL CH521S-30GP UNITS

Maximum Recurrent Peak Reverse Voltage VRRM 30 Volts

Maximum RMS Voltage VRMS 21 Volts

Maximum DC Blocking Voltage VDC 30 Volts

Maximum Average Forward Rectified Current IO 0.2 Amps

Peak Forward Surge Current at 8.3 mSec single half sine-wave IFSM 1.0 Amps

o
Maximum Operating Temperature Range TJ +125 C

o
Storage Temperature Range TSTG -40 to +125 C

ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted )

CHARACTERISTICS SYMBOL CH521S-30GP UNITS

Maximum Instantaneous Forward Voltage at IF= 200mA VF 0.50 Volts

Maximum Average Reverse Current at VR= 10V IR 30.0 uAmps

NOTES : 1. Measured at 1.0 MHZ and applied reverse voltage of 1.0 volts. 2002-5
2. ESD sensitive product handling required.
 RATING CHARACTERISTIC CURVES ( CH521S-30GP )

FIG. 1 - FORWARD CHARACTERISTICS FIG. 2 - REVERSE CHARACTERISTICS

1 10m
o
Ta=125 C
100m 1m
FORWARD CURRENT, (A)

REVERSE CURRENT, (A)

o
75 C
10m o C C 100u
2 5 o
=1 75 o C
Ta 25 o
25 C
C
-25 o

1m 10u

100u 1u
o
-25 C
10u 100n

1u 10n
0 0.1 0.2 0.3 0.4 0.5 0.6 0 10 20 30
FORWARD VOLTAGE, (V) REVERSE VOLTAGE, (V)

FIG. 3 - TYPICAL JUNCTION CAPACITANCE FIG. 4 - TYPICAL FORWARD CURRENT

DERATING CURVE
100 120
Ta =25oC
AVERAGE FORWARD CURRENT, (%)
JUNCTION CAPACITANCE , (pF)

f=1MHz
50 100

20 80

10 60

5 40

2 20

1 0
0 2 4 6 8 10 12 14 0 25 50 75 100 125 150
o
REVERSE VOLTAGE, (V) AMBIENT TEMPERATURE, ( C)