\ Instrument No. — BG- Date: DETERMINATION OF THE BAND GAP OF A SEMICONDUCTOR BY ‘OUR PROBE METHOD APPARATUS ; Ge single crystal (n type with thickness () = 0.05 cm.), four probe arrangement [distance between probes (S) = 0.2 cm. |, oven and thermometer. THEORY: in figure four probes are spaced S1, $2, $3 and S4 apart. Current /is passed through the outer "© Probes (1&4) and the floating potential is measured approx the inner pairs of probes 2 & 3. T= +—nrowes Figure : Circuit Used For Resistivity Measurements,The potential difference between probes 2 & 3 can be wr ten as lp, Veo 2as “O Where pyis the resistivity of the material, is the amount of current passing through the material. Therefore, ans Vv Pos das 7 i) Since the thickness of the crystal is very small i Tr eran te Y small compared to the probe distance a correction Now substituting the values, Po=2%3.14x0.2x" <1, 256 7 7 and the correction factor G, ie. /(2)ia's.¢9 . | Po _1.256 ¥ 589° 5.89 7 v = 0.2132 it e T (iii) Thus Pp may be caleulated for various temperatures Now, if we plot logy, 0 vs. : + We get a curve whichis linear at higher temperatures, E, We know resistivity, pxcoul ac), where C is a constant, From this expression we can E,\1 = Inp=|—£ | +Inc have: inp (3)h« Therefore, width of the energy gap may be determined from the slope of the linear portion of Alogee__Aing 1 E the experimental curve: TAP 72303¢a} "2303 “3K Thus we have Where K is Boltzman’s Constant [K = 8.6 x 10° eV/Kelvin] © dept. of Basic Engineering Sciences, Netaji Subhash Engineering College.Procedure: 1, Switch om the circuit (make sure that the oven is switched off). Align the voltmeter/ammeter display changer switch at ammeter position and fix the value of the probe current to any fixed value (approx. 6-8 mA). 3, Align the display changer switch to voltmeter position and note the temperature and record the corresponding voltage value. 4, Switch on the oven at low heating mode. AAs the temperature stats to increase, record all the corresponding values ofthe voltage at the interval of 10 °C up to 60 °C and from thereon till 140 °C at the interval of 5 °C. 6. Switch off the oven and then switch off the cireuit. 7. Calculate all the terms in the table 8. Plot a graph between logup vs T1. 9. Take the slope from the linear portion of the mean graph. 10.Complete the calculation to find out the value of the Band gap for the given semiconductor. OBSERVATIONS: Current /= ___mA (constant) Distance between probes (5) = \2em. .05 em, ‘Thickness of the crystal (w Voltage Readings st | Temp oe Temperature |p iT logio p no. | (°C) Voltage | (Tink) | (em) | (K) Raw data | (iltvolts) RESULT: The band gap ofthe germanium sample is found out to be (The standard value of band gap for Ge semiconductor is 0.7 eV) DISCUSSIONS: ev. © vypt of Basic Engineering Sciences, Netaji Subhash Engineering College