WE 7110826 0067459 Tab MMPHIN BC264A to D N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS ‘Symmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO-92 variant; in- tended for hi-fi amplifiers and other audio-frequency equipment. ‘QUICK REFERENCE DATA Drain-source voltage Vs max, 30 V Total power dissipation up to Tam = 75 °C Prot max, 300 mW Junction temperature y max. 160 °C Drain current Vps= 15 V; Vas =0 Ipss 2t012 mA Transfer admittance (common source) Vps= 18 V: Vg = 0:f = 1 kHz Ys typ, 3,5 mS. Noise figure at Vps = 15 V; Ves =0 f=1 kHz; Rg = 1 M& F < 2 0B MECHANICAL DATA Dimensions in mm Fig. 1 TO-92 variant, Pinning: drain 2 source 3 gate too — [v5 pe tin — diameter within 25max, eeneeyxmn zene | | Note: Drain and source are interchangeable December 1990 atMB 7110826 OOb74b0 754 MEPHIN BC264A to D Il RATINGS Limiting values in accordance with the Absolute Maximum System (IEC134) Drain -source voltage +Vps Drain -gate voltage (open source) Ypco Gate-source voltage (open drain) ~Voso Gate current Ig Total power dissipation up to Tan) = 75°C Prot Storage temperature range Testy Junction temperature Ty ‘THERMAL RESISTANCE From junetion to ambient in free atv Reh jaa max. 30 max. 30 max. 30 max. 10 max. 300 -65 to +150 max. 150 = 260 a mA mW °c oa 82 December 1990M™ 711082 OOb7461 694 MEPHIN N-channel silicon field-effect transistors BC264A to D CHARACTERISTICS Ty = 25 °C unless otherwise specified Gate cut-off current po264A |B [c _| D -Vos = 20 V; Vps = 0 -Igss < 5] 5] 5] 5 mA Drain current Vos = 15 Vi Vos =0 Ipss < 4516.5 ]8,0|12,0 ma Gate-source breakdown voltage =Ig = 1A: Vps =0 -Varyoss > 30] 30/30] 30 V Gate-source voltage Ip = 200A : Vpg = 15 V -Ves > 04 |o4lo4] os Vv Ip = 1,0 mA; Vps = 15 V -Ves ez ycy iy Ip = 1,5 mA; Vps = 15 -Ves ee |e |e ee Ip = 2,5 mA; Vpg = 15. V -Vos z Tyree} ty Ip = 3,5 mA; Vpg = 15 V Vos 2 Tz iz pee y Gate-souxce cut-off voltage Ip= 10nA : Vps = 15 -ves > 0540.5 )0.5| 05 Vv y-parameters at Tamb = 25 °C Vps = 15 V; Vgg = 0; f= 1 iz Transfer admittance |ye8| > 2,5 |3,0 [3,5 | 4.0 ms Vps = 15 V; -Vgg = 1 V; f= 1 MHz as Input capacitance Cis typ, 40 pF Feedback capacitance Ces ty. 12 pF Output capacitance Cos typ, 16 pF Noise figure at f = 1 kHz; Rg = 1 MO. Vps = 15 V; Vos = 0; Tamb = 25 °C F eae Equivalent noise voltage at Tamb = 25 °C. Vps = 15 V: Vas = 0; f = 10 Hz Va/VB typ. = 40 Viz December 1990 53MH 7110826 GOb74b2 520 MPHIN BC264A to D Je 15 typical behaviour of Ip versus —Vgg and Vpg Ib t (ma) 10 0 4 -Vos(V) 2 0 10 Vpg(v) 20 Fig, 2 10 ena a zene in typ. values: (mA) 1 1971 typ. values 10-2 54 December 1990mm 7110826 OOL74B3 4b7 mEPHIN N-channel silicon field-effect transistors BC264A to D 1 azenise Vl Typ. values (ma/v) i Vps=15V f=Iktz a | Tamb=25 °C T T t BG26A1) : ‘po26an—FCROC BE264A 25 0 0 28 5 75 10 12,5 Ip (mA) 15 Fig. 5 ‘ neve e aes Yps=15V fr] Crs EEEE typ. values f=1 Miz Cos t -Ves=2V (F) = 1M Tamb=25 °C} Gos| December 1990 55an _ M@™ 7110826 0067464 373 BPHIN BC264A to D 20 i (a) Vps=15V 15 ok 0 L ee L al 10 10? 103 Rg (kay 104 56 Decomber 1990