MEMS TECHNOLOGY (EX BRANCH) PREVIOUS YEAR QUESTION PAPERS - Searchable

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1) Question No.1 is compulsory.
2) Answer any Three out of remaining
raining five quesffir, ':-.l''r:' r',.,
five questions ir
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What
What are
are micro-actuators
micro-actuators pertaining
pertaining toto MEMS. T ea cae gy? ‘ty
..
^-
MEMS
Define
Define piezoresistivity
piezoresistivity and
and list
list out
out all
all piezoresistive o€! icients.”
pie4s':d $tS, x '?'e- :k$ .r:
'
ls:ee{T.9leprs.
Explain
Explain the
the role
role of
of sacrificial
sacrificial layer
layer in
in fabrication
Efiiu-imr$'#MEMS *
gMsdeytcEsr,::'",--,Y ',! .
What
Wbat are
are ploymers?
ploymers? Draw
Drawstructure
structure ofof PMMA
FMMA polymer
polymera and discuss its
and.discuss role in
its'role ina 10M
10M
MEMS fabrication. ae
What
What do
do you
you understand
understand by:
by"ha ‘clean fon? Expiain,the
elean,foom? Bx in the © steps in a standard RCA
stepsin,aifaodard.ReA 10M
10M
cycle during wafer clones ,
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State different
different type 5 ure: ‘sensors and
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and exp in in det
explqrp,lrn ail; iabrication
aetail, fa prication steps
steps 10M
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for a piezo-resistive f
Draw neat di4g43m-andBxptairriift-of,f process.lwhy *ould one use it, in MEMS 10M
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,.,X\4SMS packaling :& irs challenges.
.,r- Hig& Aspeet_ Rario:Vf,EMS fabrication.
‘MEMS Aceelerometer
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Q.2
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Q.4
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Q.6
Q.5
Q.4
Q.3
Q.2
Q.1
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N.B:
Wire
What
What
d) What
a) What
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List the
Attempt any
C) Define
MEMS
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Explain
Explain
3.
What is
What is
2.
Short note
Discuss
b) Discuss
Sensors
N.B: 1.
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pressure
Annealing
Describe
e) Describe
What are
Compare
Explain in
on
Annealing
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Sensors in
Discuss the
Discuss the
note on
1. Q.
Define TCR
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four.
bonding
the types
is Etch
Describe the
Describe the
are the
any four.
Wire bonding
electroplating
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TCR &
Explain silicon
Whatisis MEMS
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Please
electroplating is
sensor.
types of
the role
is MEMS?
Reliability
7C C 50 E 94 32 7 B 35 C FE EF 33 C CD 50 E5 94 32 7E
pressure sensor.
in details
3. Assume
MEMS Reliability
Attempt
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role of
Etch stop?
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the process
the design
Compare Deposition
the process
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silicon crystal
Paper
2. Attempt any
MEMS? What
in Biomedical
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& Stiffness
of SU8
Please check
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What is
process flow
of pressure
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process flow
SU8 in
Assume suitable
the phenomenon
is necessary
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flow of
stop? Discuss
Stiffness and
any three
details application
compulsory.
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phenomenon of
necessary in
flow for
Q. llisis compulsory.
and its
Discuss it’s
application of
Deposition techniques
suitable data
crystal structure.
three out
MEMS micromachining?
pressure sensor
Paper // Subject
in MEMS
check whether
Biomedical Applications
in LlGA
is significant
Applications
out of
design considerations
structure. Why
sensor and
techniques used
of Stiction,
considerations in
whether you
used in
for fabricating
micromachining? Explain
of Polymers
data wherever
Subject Code:
7C C 50 E 94 32 7 B 35 C FE EF 33 C CD 50 E5 94 32 7E
it’s techniques.
Stiction, and
process.
and show
its significance
techniques.
Explain in
Polymers in
Why silicon
LIGA process.
[Time:

you have
of Photolithography.
applications.
significant difference
silicon is
[Time: 3
fabricating micro
significance wrt
MEMS applications.
show the
of remaining
in MEMS
in Selection
wrt to
Code: 53006
have got
Selection of
in details
and possible
MEMS with
in MEMS.
is used
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wherever required
got the
Photolithography. Explain
7E B63 5D CD FE F2 337 C0 D 0F E59 4F 2A 7E 63 5D D EE F2 37
micro heater.
*************
Hours]
used as
difference between
MEMS
the process
3 Hours]
to MEMS
MEMS. Why
required and
possible ways
Explain the
questions.
of MEMS
remaining questions.
heater. Also
ways to
the right
with respect
53006 // MEMS

Why and
details fabrication
process steps
the types
respect to
and justify

as substrate
steps for
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to avoid
types of
and How
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Also explain
it.
justify the
materials?
to their
avoid it.
How to

MEMS materials?
explain its
fabrication process
night question
between Microelectronics
substrate material
Technology
same.
process flow
to make
MEMS Technology
material in
the same.
for fabricating
Microelectronics and
paper.
flow of
of photoresist
question paper.
its working
7E B63 5D CD FE F2 337 C0 D 0F E59 4F 2A 7E 63 5D D EE F2 37 fabricating the
applications.
their applications.
MEMS?
used.
of LlGA.
make polymer
photoresist used.
in MEMS?

principle.

Why
working principle.
LIGA. Why
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Microsystem?
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and Microsystem?
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piezoresistive
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the piezoresistive
conductive.
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polymer conductive.
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F3 A7 EB 35 DC DF E 23 7C 0C 5 FE 94 3 A7
2A E 63 D D EE F2 37 0C D5 0F 59 F3 2A E
Marks:80]
7E B63 5D CD FE F2 337 C0 D 0F E59 4F 2A 7E

20
10
10
10
10
10
10
10
10
[[ Marks:80]
20
10
10
10
10
10
10
10
10
20
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7 9 3
-:r'
- E" I
qt L\- qENA"g T"r^'^ov
trn1
) e.P=cods
[Time: 2.30 Hours]
[Time:2.30 Hours]
Please check whether you have got the right eu . ti s

'lr
N.B:
N.B: 1. Q.1 is compulsory
2. Attempt any three out of remaining
Qi
Q.1 a) List three silicon compound materials used in MEMS and explair
b)
b) What is Annealing?
c)
c) Compare wet and dry etching techniques. | i
d) Explain principle of digital Mirror device. ~
Q.2 a)
L b)
10
Q.3 a)
10
b)
10
10
,Q.4 a)
10
10
b)
10
10
Q.s
") ..q1lGiry'-;J'*$;[piio5ig1e,or,t;;# poXbisgribethe representation process low ror 10
10
10
10
20
20
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i
Paper
Paper // Subject
Subject Code:
Code: 53006
53006 // MEMS
MEMS Technology
Technology
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Qcfuar) ) you have (3 Hours) ;.;;:
Please
Please check
check whether
whether you hun" the
the right
righi question.
o.r'S$h paper:
N.B.:
N.B.: 1)1) Question No.1 is compulsory.
2)
2) Answer any Three out of remaining five questions
3)
3) Draw the neat diagrams wherever necessary.
Ql.
Q1.
A]
Al What is MEMS? Give two examples of MEMS devices ee are : characterized
by sensors and actuators. SA SS
B]
BI What are polymers? Discuss its role in MEMS. fabrication:
g wafer cleaning. S oer i : ing
C]
cI Explain the steps in standard RCA cycle, durin
D]
Dl Explain packaging challenges in MEMS devices. =
Q2.
Q2. i:-;i'..:;',;'-ji'1.;''.i;
AI What
A] What are different silicon
are different
:
compounds.Explain
silicon compounds.
I t /'' '(' '..:
characteriitics and usés in
their characteristics
Explain their 1010
MEMS
MEMS device
device fabrication.
fabrication.
B]
Bl State various physical vapor deposition techniques. Explain in brief any one 10
10
technique of PVD in MEMS fabrication. a
Q3.
Al
A] _ Explain
Explain the
the process
procgss of
of photolithography detail.
photolit.liggraphy inin detail. 10
10
BI
B] _ Distinguish between Wet
Distinguish behreenWetand and Dr-y,etching
Dry etching process
process with
with suitable applications.
suitable applications. 10
10
Q4:
Al Describe: the representative process flow. for fabricating the cantilever structure.
A] 10
10
Bl = reliability in MEMS devices. Explain it using bath-tub-curve.
B] 10
10
rQ5.
Explain in detail; fabrication steps for MEMS microheater. 10
10
(a ceeetitie oo bulk micromachining with suitable examples. 10

10
5. “Wes short note on: 20

20
‘MEMS. sensors im. JoT applications.
] ~ Selection of MEMS. material based on applications.
~ Wafer bonding techniques.
"MEMS device characteristics.
3543B08B25649D0960B0CD7F26DBE8A
3s43B08B25649D09608oCD7F26DB88A1 I
T5028/T1/85 MEMS TECHNOLOGY
Q.P. Code :08594
[Time: Three Hours] [ Marks:80]
Please check whether you have got the right question paper.
N.B: 1. Q.1 is compulsory.
2. Attempt any three out of remaining questions.
3. Assume suitable data wherever required.
Q.1 Explain various micro — actuation techniques pertaining to MEMS technology. 20

Explain the role of MEMS sensors in loT.
Define TCR, thermal conductivity and its significance with respect to MEMS devices.
Explain DRIE in detail.
Q.2 Explain fabrication steps of thermal Ink — jet printer head by Hewlett — packard and explain its ink — 10
firing sequence.
b) What do you understand by high aspect ratio MEMS? Explain fabrication process flow for 10
HARMEMS.
(3 How MEMS pressure sensor converts pressure into its equivalent electrical parameter, explain with 10
its schematic representation and fabrication process steps.
Define reliability? Draw and explain bath — tub>curve, describing MEMS devices reliability. 10
Q.4 Differentiate between surface and bulk micromachining for fabrication of MEMS devices with 10
suitable example.
“Silicon based microelectronics is different than MEMS fabrication” Justify the statement. 10
Q.5 What are polymers? Discuss role of SUS and PMMA polymers in MEMS applications. 10
b) List out various silicon compounds. Explain their characteristics and uses in MEMS5 device 10
fabrication.
Q.6 Write short note on (any two) 20

a) Wire bond techniques
b) MEMS accelerometer
c) Lithography (any one type in detail)
oe oe oo
3321695B2084°R 155E053B 1185AA4C20

BE/Rem VII /CBSGS/ETRX/MEMS T/t- 12-2017
Q.P. Code :08593

[Time: 03 Hours]
[ Marks: 80 ]
Please check whether you have got the
right question paper.
N.B: 1. Ql. Is compulsory.
2. Attempt any three out of remaining.
3. Assume any suitable data required but
justify the same.
Q.1a) What is the need of Lift off method? Explain this
method with proper diagrams. €) 20
b) What is the stiffness constant of microcantile
ver beam for following given dimension end a
load applied at its tip. E=170GPa, h(thickness) oint contact
= 101m,
w(width)=2um & L(Length) = 50pm
c) €xplain wafer bonding and its techniques.
d) Explain scaling of MEMs devices.
™
Q.2a) Explain any one MEMS device used jn mode
rn automobile systems wi 4 principle and
on representative fabrication process steps. 10
b) Justify the need of PECVD with its proper sche

matic and exple %
10
Q.3a) Explain fabrication of any one of the MEM
S duties usi tomachining technique.
10
b) Explain the importance of etch stop tech
niques wit 7.
10
Q.4a) Explain the fabrication process steps
for vga its advantages over conventional Macr
heater, osized 10
; b) Name any two polymer materials for MEM
S fevice fabrication. Also explain the importan
polymer materials for MEMS device fa ce of these 10
h suitable examples.
Q.5a) ge. a
Describe the representative. proce ~ abricating the Digital Micro mirror Device (DMD
Instruments. Also explain its w ) by Texas 10
g principle.
b) Define theterm TCR. Also deécr
he method of characterization of TCR.
10
Q6 Write Short notes on
a) DRIE
& its signi MEMS device fabrication. 20
b) Surface micromathining
é
c) TCE of a ma its issues.
d) Siasa
8 ee ae oe ae ee
B17849890635CO0F 46D54074DED7A6A
9B
a
BE [ELe|semq Mu] cm st es| Bo e ME MS Te se er le /

y sh el Q. P. Code : 731500
3 Hours
N.B.
1) Q. No. 1 is compulsory.
2) Attempt any three out of remaining questions. ¥
3) Assume any suitable data wherever required but justify the same. > >
1 a Justify the statement that silicon based microelectronics is different tan micre- 20
fabrication (MEMS fabrication). fy =F
b State various Chemical Vapor Deposition Techniques. Explain in hd, one
of the techniques of Chemical Vapor Deposition for MEMS devi ce fatgcation.
c Define Piezo-resistive property of single crystal silicon as MEMS. ; material. Also
define and justify that semiconductor material has high Gauge facior
d What is the resonant frequency Fo for the silicon cantilever tDeam of 2000um
long and 200m wide and 1.5m thick?( Data: forsiicon == 190 GPa and The
density is 2.39 g/cm?) a! i
2 a Explain transduction pertaining to capacitive meastrement, Piezo-resistive for 10
MEMS. Also state different parameters on which this Pansduction depend.

b Discuss fabrication process for DMD. Justify cléarly choice of materia!, process 10
parameters & sub-type of processes preferred
3 a Justify the need of vacuum pressure in, Physical Vapor Deposition (PVD). 10
Explain in brief any one of the techniques a PVD for MEMS device fabrication. 10
Also define the terms step Coverage and shadowing.
b Describe the representative, process flow for fabricating the micro-heater. Also
explain the operating pritige of this MEMS device in detail with its analytical
expression. bef
4 a Explain the process Integration for typical MEMS Device 10
b Give two examples 6 combination of structural, sacrificial layers and enchants 10
used in MEMS. fabrication along with their applications
S a_ Explain whatdo you mean by Wafer bonding? State the need of the same. 10
What are ine different types of Wafer bonding?
b Discuss § MEMS reliability in detail. 10
6 “\\Writerd short note on (any three) | 20
a Piasma Etching
Lb ’ Advantages and limitations of surface micromachining
~ High Aspect Ratio MEMS
oh
DMD (Digital Mirror Device)

o.
sém- Jill ETRX Cases) aa slg
MEMS Technohogy,. : 731501
Q. P. Code
3 Hours Max Marks: 80
N.B.
1) Q. No. 1 is compulsory.
2) Attempt any three out of remaining questions.
3) Assume any suitable data wherever required but justify the same.
a Give few examples of MEMS device which are characterized by sensors and 20
actuators.
Explain the sacrificial layer and its role in fabrication of MEMS devices
Df
What are the characteristics of Micro-heater?

Oo
In case of photolithography, Compare the two types of photo-resist used | : |

Oo
Discuss the process of photolithography. Mention the types of photolithography 10

oO
suitable for at least two MEMS devices with justification. a

b Discuss selection of material based on applications. Support your answer by 10
considering suitable example. | - -

a A30 um thick membrane ts needed for a pressure sensor application. Calculate 10
the size of the mask opening W needed for the V groove if the full wafer
thickness is 600 um using an-isotropic (Tan 54.74°) etching below the silicon
<100> surface. . :
b Explain Dry etching & Wet etching in fabrication process of MEMS devices. 10
a Describe the representative process flow’ for fabricating the ink jet printer head 10
by Hewlett-Packard. Also explain the operating principle of this MEMS device in
detail. -
b Differentiate between bulk and.surface micromachining for fabrication of MEMS 10
devices with suitable examplé |
a State various Chemica! Vapor Deposition Techniques. Explain in brief the 10
techniques. of Chemical Vapor Deposition for MEMS device fabrication.
b Explain transduction pertaining to microfilm strain gauge. State the factors that 10
lead to thin filmi. stress

Write a short note on (any three) 20
a Photolitixography(Compare major types of exposure system)

b Anodic bonding
c Refiability of MEMs devices.
d Applications of MEMS in Biomedical instrumentation

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raper

." .': . , i' ' .,,',;;' .,; :. .

fxpkGthe,stirOi o"t*U'ltr,aUtication of MEVIS With proper illustration of 10M

virtually perfect vertical 10M

,' ,."Write sho$noteoni .'," 20M

0C D5 FE 594 F3 A7 EB 635 DC DF EF 23 7C 0C 50 FE 94 F32 A7 B

7E B63 5D CD FE F2 337 C0 D 0F E59 4F 2A 7E 63 5D D EE F2 37

DF EE F23 37C 0C D5 0FE 59 F3 2A7 EB 635 DC DF EE F23 37C 0C D5 FE

F2 37 C0 D 0F 59 4F3 2A 7EB 63 5D D EE F2 37 0C D5 0FE 59 F3

D5 0FE 59 F3 2A EB 63 DC DF EE 23 37C 0C D5 FE 59 F3 A7 EB 635

She 518 oI 28 2fe oe 2s 2s 2g oo oR

7E B63 5D CD FE F2 337 C0 D 0F E59 4F 2A 7E 63 5D D EE F2 37

DF EE F23 37C 0C D5 0FE 59 F3 2A7 EB 635 DC DF EE F23 37C 0C D5 FE

F2 37 C0 D 0F 59 4F3 2A 7EB 63 5D D EE F2 37 0C D5 0FE 59 F3

0C D5 FE 594 F3 A7 EB 635 DC DF EF 23 7C 0C 50 FE 94 F32 A7 B

DF EE F23 37C 0C D5 0FE 59 F3 2A7 EB 635 DC DF EE F23 37C 0C D5 FE

EE F23 37 0C D5 0FE 59 4F3 2A EB 63 DC DF EE F23 37C 0C D5 0FE 594

0C D5 FE 594 F3 A7 EB 635 DC DF EF 23 7C 0C 50 FE 94 F32

7E B63 5D CD FE F2 337 C0 D 0F E59 4F 2A 7E

Please check whether you have got the right eu . ti s

86 ser??-W; sLl zc/s 04/

(a ceeetitie oo bulk micromachining with suitable examples. 10

5. “Wes short note on: 20

Q.P. Code :08594

[Time: Three Hours] [ Marks:80]

Q.1 Explain various micro — actuation techniques pertaining to MEMS technology. 20

Q.6 Write short note on (any two) 20

3321695B2084°R 155E053B 1185AA4C20

Q.P. Code :08593

b) Justify the need of PECVD with its proper sche

BE [ELe|semq Mu] cm st es| Bo e ME MS Te se er le /

MEMS. Also state different parameters on which this Pansduction depend.

DMD (Digital Mirror Device)

3 Hours Max Marks: 80

What are the characteristics of Micro-heater?

In case of photolithography, Compare the two types of photo-resist used | : |

Discuss the process of photolithography. Mention the types of photolithography 10

suitable for at least two MEMS devices with justification. a

considering suitable example. | - -

lead to thin filmi. stress

a Photolitixography(Compare major types of exposure system)

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