DMN2040U

N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary Features

ID Max  Low On-Resistance
BVDSS RDS(ON) Max
TA = +25°C  Low Input Capacitance
25m @ VGS = 4.5V 6.0A  Fast Switching Speed
20V
33m @ VGS = 2.5V 5.2A  Low Input/Output Leakage
NEW PRODUCT

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)
Description
This new generation MOSFET is designed to minimize the on-state Mechanical Data
resistance (RDS(ON)) and yet maintain superior switching performance,
 Case: SOT23
making it ideal for high efficiency power management applications.
 Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Applications  Moisture Sensitivity: Level 1 per J-STD-020
 General Purpose Interfacing Switch  Terminals: Finish  Matte Tin Annealed over Copper
 Power Management Functions Leadframe. Solderable per MIL-STD-202, Method 208 e3
 Terminals Connections: See Diagram Below
 Weight: 0.008 grams (Approximate)

SOT23 D

G
G S
S
Equivalent Circuit
Top View Top View

Ordering Information (Note 4)

Part Number Case Packaging
DMN2040U-7 SOT23 3000/Tape & Reel
DMN2040U-13 SOT23 10000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See http://www.diodes.com/quality/lead_free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.

Marking Information

AS9 = Product Type Marking Code

YM or YM = Date Code Marking
YM

AS9
22K Y or Y = Year (ex: F = 2018)
M = Month (ex: 9 = September)

Date Code Key

Year 2017 2018 2019 2020 2021 2022 2023 2024 2025
Code E F G H I J K L M
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D

DMN2040U 1 of 7 March 2018

Document number: DS40476 Rev. 3 - 2 www.diodes.com © Diodes Incorporated
 DMN2040U

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic Symbol Value Unit
Drain-Source Voltage VDSS 20 V
Gate-Source Voltage VGSS ±12 V
Steady TA = +25°C 6.0
Continuous Drain Current (Note 6) VGS = 4.5V ID A
State TA = +70°C 4.8
NEW PRODUCT

Maximum Continuous Body Diode Forward Current (Note 6) IS 1.6 A

Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%) IDM 30 A

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic Symbol Value Unit
Total Power Dissipation (Note 5) PD 0.8 W
Thermal Resistance, Junction to Ambient (Note 5) Steady State RJA 159 °C/W
Total Power Dissipation (Note 6) PD 1.36 W
Thermal Resistance, Junction to Ambient (Note 6) Steady State RJA 92 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage BVDSS 20 — — V VGS = 0V, ID = 250μA
Zero Gate Voltage Drain Current TJ = +25°C IDSS — — 1.0 µA VDS = 20V, VGS = 0V
Gate-Source Leakage IGSS — — ±100 nA VGS = ±12V, VDS = 0V
ON CHARACTERISTICS (Note7)
Gate Threshold Voltage VGS(TH) 0.5 — 1.2 V VDS = VGS, ID = 250μA
21 25 VGS = 4.5V, ID = 8.2A
Static Drain-Source On-Resistance RDS(ON) — m
26 33 VGS = 2.5V, ID = 3.3A
Diode Forward Voltage VSD — 0.7 1.2 V VGS = 0V, IS = 1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance Ciss — 667 — pF
VDS = 10V, VGS = 0V,
Output Capacitance Coss — 91 — pF
f = 1.0MHz
Reverse Transfer Capacitance Crss — 83 — pF
Gate Resistance Rg — 1.2 —  VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge Qg — 7.5 — nC
VGS = 4.5V, VDS = 10V,
Gate-Source Charge Qgs — 0.8 — nC
ID = 8.2A
Gate-Drain Charge Qgd — 2.5 — nC
Turn-On Delay Time tD(ON) — 3.9 — ns
Turn-On Rise Time tR — 5.1 — ns VDD = 10V, VGS = 4.5V,
Turn-Off Delay Time tD(OFF) — 21 — ns RL = 10, Rg = 6
Turn-Off Fall Time tF — 9.4 — ns
Reverse Recovery Time tRR — 12 — ns IF = 5.0A, di/dt = 100A/μs
Reverse Recovery Charge QRR — 3.4 — nC IF = 5.0A, di/dt = 100A/μs
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.

DMN2040U 2 of 7 March 2018

Document number: DS40476 Rev. 3 - 2 www.diodes.com © Diodes Incorporated
 DMN2040U
20.0 20
VGS = 2.0V
18.0 VGS=2.5V VDS = 5V
VGS = 3.0V
16.0 VGS = 4.0V 16
ID, DRAIN CURRENT (A)

ID, DRAIN CURRENT (A)

14.0 VGS = 4.5V
VGS = 1.8V
12.0 12
NEW PRODUCT

10.0 VGS = 10.0V

8.0 8 TJ=85℃
6.0 TJ=125℃
4.0 VGS = 1.5V 4 TJ=150℃ TJ=25℃
2.0 VGS = 1.2V TJ=-55℃
0.0 0
0 0.5 1 1.5 2 2.5 3 0.5 0.8 1.1 1.4 1.7 2
VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic Figure 2. Typical Transfer Characteristic

RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()

0.03 0.1
RDS(ON), DRAIN-SOURCE ON-RESISTANCE

0.028
0.08
0.026 VGS = 2.5V

0.024 0.06 ID = 8.2A

()

0.022

0.04 ID = 3.3A
0.02
VGS = 4.5V
0.018
0.02
0.016

0.014 0
0 4 8 12 16 20 0 2 4 6 8 10
ID, DRAIN-SOURCE CURRENT (A) VGS, GATE-SOURCE VOLTAGE (V)
Figure 3. Typical On-Resistance vs. Drain Current and Figure 4. Typical Transfer Characteristic
Gate Voltage

0.04 1.8
RDS(ON), DRAIN-SOURCE ON-RESISTANCE

RDS(ON), DRAIN-SOURCE ON-RESISTANCE

VGS = 4.5V
0.035 TJ=150℃ 1.6 VGS = 4.5V, ID = 8.2A

0.03
TJ=125℃ 1.4
(NORMALIZED)

0.025 TJ=85℃
1.2
()

0.02
TJ=25℃ VGS = 2.5V, ID = 3.3A
1
0.015
TJ=-55℃
0.01 0.8

0.005 0.6
0 2 4 6 8 10 12 14 16 18 20 -50 -25 0 25 50 75 100 125 150
ID, DRAIN CURRENT (A) TJ, JUNCTION TEMPERATURE (℃)
Figure 5. Typical On-Resistance vs. Drain Current and Figure 6. On-Resistance Variation with Junction
Junction Temperature Temperature

DMN2040U 3 of 7 March 2018

Document number: DS40476 Rev. 3 - 2 www.diodes.com © Diodes Incorporated
 DMN2040U
RDS(ON), DRAIN-SOURCE ON-RESISTANCE 0.05 1.2

VGS(TH), GATE THRESHOLD VOLTAGE (V)

0.04
0.9
VGS = 2.5V, ID = 3.3A
0.03 ID = 1mA
()
NEW PRODUCT

0.6
0.02
ID = 250μA
VGS = 4.5V, ID = 8.2A
0.3
0.01

0 0
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (℃) TJ, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Junction Figure 8. Gate Threshold Variation vs. Junction
Temperature Temperature
20 10000
f=1MHz
VGS = 0V

CT, JUNCTION CAPACITANCE (pF)

16
IS, SOURCE CURRENT (A)

1000 Ciss
12

8 Coss
100
TJ = 85℃
TJ = 125℃
Crss
4
TJ = 25℃
TJ = 150℃
TJ = -55℃
0 10
0 0.3 0.6 0.9 1.2 1.5 0 2 4 6 8 10 12 14 16 18 20
VSD, SOURCE-DRAIN VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current Figure 10. Typical Junction Capacitance

10 100
RDS(ON) Limited PW =100µs
PW =1ms
8 PW =10ms
ID, DRAIN CURRENT (A)

10
PW =100ms

6
VGS (V)

1
PW =1s
4 VDS = 10V, ID = 8.2A PW =10s
DC
0.1
2 TJ(Max) = 150℃ TC = 25℃
Single Pulse
DUT on 1*MRP Board
VGS= 4.5V
0 0.01
0 4 8 12 16 20 0.1 1 10 100
Qg (nC) VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 11. Gate Charge Figure 12. SOA, Safe Operation Area

DMN2040U 4 of 7 March 2018

Document number: DS40476 Rev. 3 - 2 www.diodes.com © Diodes Incorporated
 DMN2040U

1
D=0.7
r(t), TRANSIENT THERMAL RESISTANCE
D=0.5

D=0.3
D=0.9
NEW PRODUCT

0.1
D=0.1

D=0.05

D=0.02
0.01 D=0.01

D=0.005

RθJA(t) = r(t) * RθJA

RθJA = 160℃/W
D=Single Pulse Duty Cycle, D = t1 / t2
0.001
1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 10000 100000 1000000
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance

DMN2040U 5 of 7 March 2018

Document number: DS40476 Rev. 3 - 2 www.diodes.com © Diodes Incorporated
 DMN2040U

Package Outline Dimensions

Please see http://www.diodes.com/package-outlines.html for the latest version.

SOT23
All 7°
H
GAUGE PLANE
SOT23
NEW PRODUCT

0.25 Dim Min Max Typ

J A 0.37 0.51 0.40
K1 K
B 1.20 1.40 1.30
C 2.30 2.50 2.40
a
D 0.89 1.03 0.915
A M
F 0.45 0.60 0.535
L L1 G 1.78 2.05 1.83
H 2.80 3.00 2.90
J 0.013 0.10 0.05
K 0.890 1.00 0.975
C B K1 0.903 1.10 1.025
L 0.45 0.61 0.55
L1 0.25 0.55 0.40
M 0.085 0.150 0.110
D a 0° 8° --
All Dimensions in mm
F G

Suggested Pad Layout

Please see http://www.diodes.com/package-outlines.html for the latest version.

SOT23

Dimensions Value (in mm)

C 2.0
Y1 C
X 0.8
X1 1.35
Y 0.9
Y1 2.9

X X1

DMN2040U 6 of 7 March 2018

Document number: DS40476 Rev. 3 - 2 www.diodes.com © Diodes Incorporated
 DMN2040U

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application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
NEW PRODUCT

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Copyright © 2018, Diodes Incorporated

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DMN2040U 7 of 7 March 2018

Document number: DS40476 Rev. 3 - 2 www.diodes.com © Diodes Incorporated