SPECIFICATION (TENTATIVE) Device Name : Power MOSFET. 7 Type Nano : 25K2893-01 i Fuji Electric Co.,Ltd. Matsumoto Factory Fuji Electric Co.,Ltd. 2 3 FA | 0400807Seogreswrtencanaorryfencre cote 1.Scope This spectties Fuji Power MOSFET 2SK2893-01 2.Construction _ N-Channel enhancement mode power MOSFET B.Applications —_for Switching 4.0utview TO-3P —OutviewSee to 5/13 page 5.Absolute Maximum Ratings at Tc=25°C (unless otherwise specified) Description ‘Symbol | Characteristics unit] Remarks Drain-Source Voltage [vos 30 Vv [Continuous Drain Current |b £100 A Pulsed Drain Current oe £400 A [Gate-Source Voltage Vos #16 Vv IMaximum Avalanche Energy _ [Ew 2596.7 mit Maximum Power Dissipation [Po 150 w [Operating and Storage Ten 150 c Temperature range [Tota “55 to +150 c "7 L=0.S36mA,Veo=TaV 6.Electrical Characteristics at Tc=25'C (unless otherwise specified) Static Ratings [___ Description ‘Symbol Conditions min. | typ. | max. | Unit [Drain-Source vos [e=™ Breakdown Voltage IVes=0V 30 v [Gate Threshold Ip=1ma Vestth) Vottage| IVos=Ves 10 | 15 | 20 | v ero Gatevorage | Yos=80 [Toa25C 10 | 500 | uA Drain Current lVes=0V [Ten=t25°C o2 | 10 | ma lGate-Source Wos=t16V Leakage Curront|"®* _Voseov to | 100 | na Drain-Source Soa see tee as [oT On-State Resistance lves=10v 32 [ 40 Fuji Electric Co.,Ltd. i 2/13 | Wo4-004-03Dynamic Ratings Description Conditions |Forward lb=50A ‘Transconductance| |Vos=25V Input Capacitance |Vos=25V JOutput Capacitance lVes-0V : Reverse Transfer t=1MHe, lcrss. Capacitance) jta(on) —|Vec=15V. |Turn-On Time tr IVas=10V | [ta(ot) _|lb=1004 tr Ros=102 | | Reverse Diode Description Conditions lAvalanche Capability IL=100 «H Toh=25'c i |See Fig. and Fig.2 Diode Forward k=1008, On-Voltage| Vas-OV —Texn25°C Reverse Recovery | k=50A Secmen witeconrtafyfeoers tose Time| Vas=0V Reverse Recovery -dildt=100A/ ns Charge| [Ten=25'c 7.Thermal Resistance Deseription [Channel to Case __|Rth(ch-c) [Channel to Ambient _|Rth(ch-a) Fuji Electric Co.,Ltd. | Wo#-004-03Fig.1 Test circuit He HW ke OUT 4 Veo=1/10 X Vos eee wv, L=100UH 50Q sr Veo Starting Toh=25°C IV 1 shot pulse 7D 7 Wh 7p Fig.2 Operating waveforms. Ves ° — BVoss lav ‘Vos: 0 'o Fuji Electric Co.,Ltd. 2 4/B Wo4-204-03PRE-SOLDER DIMENTIONS ARE IN MILLIMETERS. CONNECTION @ GATE eee @ DRAIN @ SOURCE Note: 1. Guaranteed mark of avalanche ruggedness. JEDEC : T0-247 EIAd + SC-65 E ] HO4-004-03, Fuji Electric Co.,Ltd.Power Dissipation PD=f (Te) Te [C] Safe operating area ID=# (VDS) :D-0. 01, Te=25°C Fuji Electric Co.,Ltd. 104-008-038Typical output characteristics ID=f (VOS) :80s pulse test, Tc=25°C vos [v] Typical transfer characteristics ID=t(V6S):80 7s pulse test, VDS=25V, Tch=25°C i 2 : | 5 i t i ves (VI Fuji Electric Co.,Ltd. cr ~Typical forward transconductance gfs=f(ID):804s pulse test, WDS=25V, Te 10°| 10" LH a 10° 10" 10° 10° 1p [a] Typical Drain-Source on-State Resistance a RDS (on) =f (1D):80us pulse test,Tch=25°C Voss fp 2.0V 25V 40 { 530 g t aa 3.0V B20 Fuji Electric Co.,Ltd.Reeders cece tecrete ae Drain-source on-state resistance RDS (on) =f (Teh)! 1D=50A, VGS=10V o & 2 ee - “F 5 ° -50 ° 50 100 150 Th [0] Gate Threshold Voltage vs. Tch VGS( th) =f (Tch) :VDS=VGS, ID=1mA 3.0 26 0.0 Fuji Electric Co.,Ltd. 28 50 75 100 «125 «150 Teh ['C] iS 2 9/13 FA 1 HO#-004-03Typical Gate Charge Character istics VGS=f (Og) :1D=100A, Toh=25°C 200 300 Qg [nc] Typical capaci tances C=f (VDS) : VGS=0V, f=1MHz Fuji Electric Co.,Ltd. Fl 10/13 | 104-008-031Typical Forward Characteristics of Reverse Diode ! IF= (VSD) :80s pulse test, Tch=25'C 220 TPEEETT r TOY 200 180 160 140 = | 120 100 80 60 40 “y —— 30 0.2 0.4 0.6 08 1.0 1.2 1.4 1.6 1.8 | vsb [Vv] Typical Switching Characteristics vs. ID t=f (1D) !Vec=15V, V6S=10V, RG=10 2 Ufreerty [ Fuji Electric Co.,Ltd. E n/B O4-004-03,Maximum Avalanche Current vs. starting Tch I (AV) = (starting Tch) 120 100 80 60 1 (av) fA] 40 20 0o 50 100 150 Starting Teh ['C] Maximum Avalanche energy vs. starting Tch Eas-f (starting Tch):Vcc=12V, |,,S100A 3000 2500 2000 1500 Eas [mJ] 1000 500 ° 50 100 150 Starting Teh (1) Fuji Electric Co.,Ltd. 12/13 EHC. 'W04-004-03,Zthel Transient thermal impedande (t)_parameter:D=t/T Fuji Electric Co.,Ltd.