ntroducti & The MEMS micromachining process known as LIGA utilizes the following three fabrication process steps LIGA is a German acronym for, = Lithographie Lithography — “ Galvanoformung Electroplating Abforming — " Molding LIGA fabrication is used to create high-aspect ratio structures through the use of x- rays produced by a synchrotron or relatively low aspect ratio structures through the use of UV (ultraviolet) light.LIGA Micromaching Process & Q The LIGA process involves the following steps: ¥ L.A very thick (up to hundreds of microns) resist layer of polymethylmethacrylate (PMMA) is deposited onto a primary substrate. ¥ 2. The PMMA is exposed to columnated X-rays and is developed, ¥ 3. Metal is electrodeposited onto the primary substrate. ¥ 4. The PMMA is removed or stripped, resulting in a freestanding metal structure, ¥ 5. Plastic injection molding takes place. Q The LIGA-fabrication process is composed of: 1. Exposure, 2. Development 3.Electroforming 4. Stripping 5. ReplicationMeee saree B&B Step-1 Coat thick photoresist (300 m to > 500 m) ona Cast Pee substrate with an electrically conductive surface. on. me Step-2:- Irradiation X-ray lithography with extended exposure from highly collimated X-radiation to penetrate thick Resist with well- defined sidewalls. Innadiation invol sing a thick layer of radiation involves exposing a thick layer 0 oe resist to high-energy beam of x-rays from a Radiation synchrotron. The mask membrane is normally a tenth low atomic number material such as diamond, beryllium, or a thin membrane of a higher atomie number material such as silicon or silicon carbide.LIGA Mi Step-3: Development romaching P & In this step the pattern is etched into the resist substrate ig by the use of x- rays and desired structure are formed. Step-4: Eleetroforming Electroplate > he Metal electroplated on the exposed conductive through. substrate surface. PMMA Electroforming is the same as electroplating, Flectroforming suggests that the plating is used to create an actual metal componentStep-5 After photoresist removal, metal structure al ‘ formed may be used as mold. Sacrificial techniques are combined with the basic LIGA process to create partially freed, flexure-suspended structure or completely freed devices.X-ray Radiation Cast PMMA metal LIGA ProcessesComponent for LIGA Pro & Q Masks Y Masks are composed of a transparent, low-Atomie number carrier, a patterned high-Atomic mumber absorber, and # metallic ring for alignment and heat removal. Y Carriers are fabricated from materials with high thermal conductivity to red thermal gradients. Ex: Vitreous carbon and graphite, Silicon, silicon nitride, titanium, and diamond. ¥ Absorbers are gold, nickel, copper, tin, ia lead, and other X-ray absorbing metals. Radiation Masks can be of different types. thet ¥ Mask created by electron beam lithography. (4 yum thick) ¥ Plated photomask which provides.(3 sum) ¥ Direct photomask, which provides. (80 uum thick)O Substrate ¥ The starting material is @ flat substrate, such as a silicon wafer or a polished dise of beryllium, copper, titanium, or other material. The substrate electrically conductive, O Photoresist Y For fabrication of high-aspect-ratio structures, Cast PMMA photoresist is requites . ‘on metal ¥ It form a mold with vertical sidewalls and must be free from stress when applied in thick layers. Y The use of photoresist depends on types of Liga Process used. Y For x-ray, PMMA (Polymethyl methacrylate). Y For UV-Ray,SU-8. The photoresist with high molecular weight is applied to the substrate by a glue-down process.& Visite Photons cn yeam lithography Photolithography, sie Bee ——- diffraction limits resolution acu onimity effect) 1A) Photography (6) Elecron-Beam Litogaphy Putney nei of 23 yn Lines of 0 jm Xfays tons X-ray lithography, little diffraction, high depth of focus froxmty mask ne lon beam lithography, low penetration depth (very thin resist) ‘vacuum esis Dioet wete [ey eRay Uography (0) fon Beam Limography LUne-wis of 02 jm Line wats of 1m X& “It is a process used in microfabrication to pattern parts of a thin film or the bulk of a substrate, It uses light to transfer a geometri¢ pattem from & photomask to « light- sensitive chemi v Xerays having wavelengths of 0.4 A° to 5 A® represent radiation source for high- resolution design reproduction into polymeric resist materials. ¥ Xcray lithography was first demonstrated to obtain high-resolution designs using X- ray proximity printing by Spears and Smith. X-ray lithography can be extended optical resolution of 15 nm, + Essential elements in X-ray lithography ¥ Amask consisting of a pattern made with an X-ray absorbing material on a thin X-ray transparent membrane. ¥ An X-ray source of sufficient brightness. Y An Xeray sensitive resist material» The X-rays illuminate a mask placed in proximity of a resist-coated wafer, >The X-rays are typically from synchrotron radiation source, allowing rapid exposure , > X-ray lithography is expensive, because of the expense of operating a synchrotron, The actual operating expenses without considering the initial investment of tens-of-millions of dollars 7 Wilhelm Conrad Therefore, the LIGA provess was developed to reduce the poet izas-1993) dependency on 2 synchrotron. > Roentgen discovered an X-ray in 1895 (X-ray).Setup of proximity x-ray lithography Mask is made of absorber (Au...) on membrane (SisN,-) Membrane Absorber Resist leveling — synchrotron ray i> UHV Beamline windowAdvantages of synchrotrons for X-ray lithography Extremely high intensity. Extremely high brilliance - small effective source size situated a long distance from the experimental station. Very low divergence out of the plane of storage ring. Tunable, specific energies can be chosen. Highly polarized and short pulses. Itoffers many characteristics of visible lasers but into the x-ray regime: partial coherence, high stability. micro tounch sos ZX41.Irradiation 2. Development Synctrotron radiation SRE tes Mack Resist membrane cuectiog Resist Base plate ie Wome 3. Electroforming Meta Resist stctun Bae plate Mould cavity 5. Mould filling 6. Mould releases Plastic Plastic moulding structure ‘compound1. Irradiation; The first step in x- ray lithography is irradiation which involves exposing a thick layer of resist to high-energy beam of x-rays from a synchrotron, The mask membrane is normally a Jow atomic number material such as diamond, beryllium, or a thin membrane of a higher atomic number material such as silicon or silicon carbide. 2. Development: In this step the pattern is etched into the resist substrate by the use of x- rays. Electroforming: Electroforming is the same as electroplating, Electroforming suggests that the plating is used to create an aetual metal component.4, Mould insert ‘A chemical solvent PMMA (poly methyl methacrylate) C,O,H, is used to dissolve ‘material, resulting model of the mask pattem, After removal of the resi . a freestanding ‘metal structure is produced. 5. Mould filling: ‘The metal structure may be a final product, or serve as a mold insert for precision plastic moulding. 6. Mould releases: The plastic mold retains the same shape, size, and form as the original resist structure but is produced quickly. Moulded plastic parts may then be final produet.‘Advantages Short wavelength from Xerays 04-4 nm No diffraction etteer A Simple to use No lens (O Faster than EBL 2 Uniform refraction pattem ‘D High resolution for small feature size Disadvantage U Thin tens Distortion in absorber U Cannot be focused through lens O Masks are expensive to produce