TOSHIBA TLP627,TLP627-2,TLP627-4 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TLP627, TLP627-2, TLP627-4 PROGRAMMABLE CONTROLLERS. Unit in mm DC- OUTPUT MODULE T1P627| TELECOMMUNICATION. ‘The TOSHIBA TLP627, -2, and ~4 consist of a gallium arsenide infreared emitting diode optically coupled to a darlington connected phototransistor which has an integral base-emitter resistor to optimize switching speed and elevated temperature 7 characteristics, H The TLP627-2 offers two isolated channels in a eight lead plasti Bf ow DIP, while the TLP627-4 provide four isolated channels per package. as, © Collector-Emitter Voltage : 300V (Min.) 115B2, © Current Transfer Ratio: 1000% (Min.) Weight : 0.26g © Isoration Voltage + 5000Vrms (Min,) © UL Recognized : UL1577, File No, E67349 Seas T1P6272 MADE IN JAPAN | MADE IN THAILAND 4 [UL Recognized |B6T349 [152849 1 [BSI Approved _|7426, 7427 *2 [7426, 7427 2 “1 ULI77 2 BS EN6UU6S : 1994, BS EN6UYDU ; 1992 PIN CONFIGURATIONS (TOP VIEW) ‘TLP627 ‘TLP62T-2 ‘TLP627-4 EMITTER 1 2: CATHODE 3 4: COLLECTOR 1,3 24: CATHODE 5 5,7: EMITTER 6,8 COLLECTOR g4f [TOSHIBA _11-20A3 1,3,5,7 ANODE = 2)4,6,8 CATHODE Weight : Lig 9,11,13,15 ° EMITTER 10,12, 14,16 : COLLECTORTOSHIBA TLP627,TLP627-2,TLP627-4 MAXIMUM RWTINGS (Ta = 25°C) RATING CHARACTORISTIC symBou | TPs | UNIT ‘TLP6T-4 Forward Current TF 6 mA Forward Current Darating aip/°C_| -0.7 (Ta=39°O) mA/°C Pulse Forward Current Ipp. 1 (100, pulse, 100pps) A & [Power Dissipation Circuit) | Pp 100 70 mW, 3 | Power Dissipation Derating (Ta225°C, 1 Circuit) aPpi"c a1 -on mw °C Reverse Voltage VR 5 Vv Tanction Temperature Tj 125 °C Collector Emitter Voltage oro 300 v zz | Bmitter-Collector Voltage Veco 03 v ° © [Collector Current Io 150 mA © | Collector Power Dissipation soe 2 | Gcireun Po 150 (*800) 100 mW a cl 8 eet apgic | -1.5¢-3.) 10 mw/°c Junction Temperature Ty 125 ¢ Storage Temperature Range Taig —55~125 *c ‘Operating Temperature Range ‘Tope —55~100 °c Lead Soldering Temperature Tyold 260 (10se0) *c ‘Total Package Power Dissipation : Ooi Pr 250 (#820) 150 mW Total Package Power Dissipation Derating . 7 Came cheat app/c | -2.5(+-3.2) 15 mWw/°C Tolation Voltage BY, 5000(AG, Imin,, RH=60%) | Vrms * Ip=20mA Max RECOMMENDED OPERATING CONDITIONS cHARACTERICTIC | SyMBoL | MIN. | Typ. |MAX.| UNIT Supply Voltage Veo — [| — | 20] v Forward Current Ip — [a6 [25 [ ma Collector Current Ic = [= [220 [ma Operating Temperature Tope = | — | |TOSHIBA TLP627,TLP627-2,TLP627-4 INDIVIDUAL ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC syMBoL | TEST CONDITION | MIN. | Typ. |MAX.] UNIT a [Forward Voltage VP Tp=10mA ao | ias[ 1a [Vv & | Reverse Current Tk VR=5V — [= [0 [a Capacitance cr. V=0, f=1MHz — [| s0[ — | Collector- Emitter = ez [Breakdown Voltage |V @®R) CEO} TC=0.tmA so} -|- | © | Bmitter-Collector 5 | Breakdown Voltage JV @R)ECO| TE=0.1mA os|- [- | sa Von =200V — [| _10 | 200 [na & | Collector Dark Current Ico c= 200" 0 | 200 8 00V, Ts — [- [2 [a Capacitance Collector to Bmsittes Cop MHz — | 1.0] — | COUPLED ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC sympoL | TEST CONDITION | man. | Typ. |MAx. | UNIT (Current Transfer Ratio Tc/Ip mA, VOB=1V. 3000 | 4000 [ — | % Saturated OTR T¢/Ip (eat)| IF=10mA, VoR=1V so | — |- | « Collector- Emitter yi Ig=10mA, Tp=1mA — [= fay, Saturation Voltage CB sat) | [o=100mA, Ip=10mA oa] — | 12 ISOLATION CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC sympoL | TEST coNnpITion | min. | Typ. |max. | UNIT Capacitance Input to Output | Cg Vg=0, f= 1MHz, — | os | — [or Isolation Resistance Rg Vs=500V RH.S60% | 6x10? | 10" | — [ 0 ‘AC, 1 minute 5000 | — | = | vim Isolation Voltage BYs AC, 1 second, in oil = [10000] — DC, 1 minute, in oil —__|10000[ — | vaeTOSHIBA TLP627,TLP627-2,TLP627-4 SWITCHING CHARACTERISTICS (Ta = 25°C) CHARACTERICTIC SYMBOL ‘TEST CONDITION MIN, | TYP. | MAX. | UNIT Rise Time t Voo=10v = [a | Fall Time ty — fas | ‘Turn-on Time tom Io=10mA. — [sf] Tur-off Time tot | RL=1009 = fas [— ‘Turn-on Time ton | 21800 orig) —fs/— Strage Time ts Veqet0V, Ip=témA = [4 |=] ys ‘Tuen-off Time tOFF CO=10N, IR= 18m! — | so | — Fig.1 SWITCHING TIME TEST CIRCUIT FTOSHIBA TLP627,TLP627-2,TLP627-4 Ip ~ Ta Po = Ta ‘TLP62T 0 ALLOWABLE FORWARD CURRENT. ip Gan ALLOWABLE COLLECTOR POWER DISSIPATION Pg) dn 20 7 sooo, Ss a ra AMBIENT TEMPERATURE. Ta (0) AMBIENT TEMPERATURE Ta (0) Ip = DR Ip - VP PULSE WIDTH= 100; 2510 PULSE FORWARD CURRENT pp nA) PORWARD CURRENT Ip (mA) rT ‘as 0ad DUTY CYCLE RATIO. Dg FORWARD VOLTAGE Vp «W) AVp/ATa - Ip Ip - Vep ‘Splate (av O PULSE WIDTHS 10) PREQUENCY= 1008 7 0, 1 a a a ) tase FORWARD CURRENT Ip (mA) PULSE FORWARD VOLTAGE Yep (W) ORWARD VoUTAGE TEMPERATURE ConAAG PULSE FORWARD CURRENT Ipp (mA)TOSHIBA TLP627,TLP627-2,TLP627-4 Ic - Ir Vogstav COLLECTOR CURRENT I (mA) COLLECTOR CURRENT I (mA) Ten25e d 1 Te os 10 i 1d se oy os 1 a a) COLLECTOR-EMITTER VOLTAGE Voce () PORWARD CURRENT Ip (mA) SWITCHING TIME — Ry, Ic/Ip - Ir. Ten2ve Veo=10v 1) coppte=t6m) Torr Grima SWITCHING TIME (=) (CURRENT TRANSFER RATIO Ig/p (®) ton le=i6mA) ‘00 aR 03 08 3 5 1 ad 60 LOAD RESISTANCE 1, (O) FORWARD CURRNT ly (mA)TOSHIBA TLP627,TLP627-2,TLP627-4 Ip ~ Vor , 1 me wr ma COLLECTOR-EMITTER VOLTAGE Ve () Ic - Ta Ip=10mA Ip - Ta oa aT AMBIENT TEMPARETURE Ta C0) Io - Ta COLLECTOR CURRENT Ig. (mA) AMBIENT TEMPARETURE Ta C0)TOSHIBA TLP627,TLP627-2,TLP627-4 RESTRICTIONS ON PRODUCT USE @ TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified ‘operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices," or “TOSHIBA Semiconductor Reliability Handbook" etc. oo707e8c @ The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc... Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. @ Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic, Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage. © The products described in this document are subject to the foreign exchange and foreign trade laws. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. BOO OT