= ____. CHAPTER Mos! 5.1 INTRODUCTION The fundam . “Tei damental ‘physics of the Metal-Oxide-Semiconductor Field-Effect istor (MOSFET) is developed in this chapter. The chapter includes the following topics: © Two terminal MOS structure; consideration of MOS as a capacitor e Energy band diagram for MOS capacitor with n-type and p-type substrate. a Space charge width for-p-type and n-type MOSFET Work function for p-type and n-type MOS capacitor Capacitance-voltage characteristic of MOS capacitor Cross section and circuit symbol for MOSFETs Current-voltage relationships for MOSFET: transconductance Some other important terms eoceeee 5.2 TWO TERMINAL MOS STRUCTURE Figure 5.1 shows the metal-oxide-semiconductor (MOS) capacitor, which is the heart of the MOSFET. The parameter to: in the figure is the thickness of the oxide, and €.- is the permittivity of the oxide. ‘Metal Insulator 7 (oxide) bog Semiconductor substrate bree reece jure 6.1: Basic MOS Capacitor Structure Fioli nin rtm eee het igs 08 a fe ruaraann vowrs0e a eh in tn helt eid en pe wags apd, he ptt dp ca the se ad ‘ein a in we ie atte wt age. Wega pe wn | ‘ypeniadnd y er Le ee artat aie | ee eee yoy aime oe ‘itl wong 05 se) Oth | ae . q | : st tt sin hoes gn apn ar m0 com te Om Vie =( omai- afte) 90-260tenee(y ie) arin ets ean ae Sand om a1 ira Charge Ditton Accmlaton Reon Near on» ctial doe ts ES ‘priate pact w 19. GAPACITANCE-YOLIAGE CHARACTERISTICS OF MOS CAPACITOR fe ge 18 ie Chr Dn ta rar Chan Fg 18 soe legate ver ae wag 66 0s ‘hve he OS cpatr wih» pe ae 582 Diterenial Charge Distetbution in Depletion Reon "pen oll patie voy api eos nti © Be ct hl ln 2 ee i aca» nil emg h se ee nila ng i Seti iiigwe 5. pt es sr Yt Yb Cte Po ot ad gene ge Scant cece Sa rs.ar oct Acme Mote Sin ote orate Delton Made sin gi nt tr ig ary “et oe | Cte = al ne alee tel snes pen wa ced a ey EGS tar enya conn vl ld» i aac eit cnt Te ec oy he pct ou irc “e com) cognac Pet and Tepito re ret he en ‘sac, The ces at at band grab Ge eyFTae) We may note st the Saban cpaance 6 & fc fe ‘ticks al vendor opine 1.94 Prequensy iets on C-Y Characters Tene wotagy cet th MOS captor ngs ai: the cae ete Wasa wl ot bse to rape. Toe C-Y cmctesin ‘itn ben can of Borer ofthe egal wo ese sce Fig 814 som the are dtrbato inthe MOS comet Te cea! Boje th een angina os tl te peng i te amin Th cama FEN Gos captor then Co The iheqenc and ee? Ht he G2 chit ae sown i Fie 81, | SSC MONPET psi qu ag nce det es et Sash the Cmte ep se dhe ze ran 2 pi oe MOSER ti ‘etapa hee 4. Pabst Eon Md MOSPET n-ne de QREE Venue testo cate ane lar str ot pp in 4 Teac Dein Mode MOSFET: Ap canine ce eden en kn tesa ‘en on i ovat ia eye! hae MOSFET sve ttl boerent et a ne Paes re ae a esa Vr br nm preset arse aan Yt anton & sien on eb Deane af evr Ie hare pa rae IS watering, Sat tt emu te tg ay aro the ae hn ds a Sao BE ec Cs neue ine te da i dt honaenly sown Fae ere | TiS pee ons Sat = vse) = ee Se at) it ein lng rate ei hs Sy 2a ccm eg ts ma Tang than the V(t val, She pot i theca Ae ee dune soe, io a sea ant th ate poe nthe cn es eee feel ee oct ge hee ee te et A oa oe se tn i EST en emmy tong bag dey a a lat fr Vr> Vos). Te me oe en ere hae ae rn mr on FE Fes erm open S113 el Carent-Vloge Relish for MOSFET ets tn wil eye te el retag tin r "Sn faa MOSTETS ina Gon atge Rl cael MOSFET | seiirconeatnn pon eco ia) Noster wpe " (en gate—¥ie—V Mette et Tae) 6) o cunt a i Our > Yt Sal ene ee ios Se se 0s | Fn ae He Wm)sat i in yh IE Romp hieceretrstre Siac n= Migee te WY Va) natin ng ota) = Mig ve VP foe steton xj, ne he rai vat ein Viste) = Vat He 114 Trmomdactance Tie MOSFET tnscandaage fda a th chang nd “ih eto th omapoding hang nue vag se we cnir an mano MOSFET operating te toa ag Seven eatin (2), we ve n= File Mpa va ren wre gen ty equton (55). The tranducance nt ren Sean nara ty pon Bie Me sd i dependent i ine tion ‘oPenTiEs oF TeansconoucTanee | 1. The tameanductnc i fence af to gory of he dvs a lar of ear mot and trl ate. 2. The tromductnce rene a he wh of th dees ase. |e abo ine the an nth and xe hae re Accumulation layor Charge ‘The donchars diet ud an oie tat in xs fhe hea ua majo cari ones, ale Charge Eat ‘The deviation in incre fi he el tthe pce arg wth ion he ce gh cn yi ‘Cmant Ondine nm ‘Gola MOS; he gy Sa eth, p ne svt nn ect ra cd age nae op cota eae “hal nya ich he pts tet a he Dpttion Made MOSFET “hs pms MOSFET which ue ig amb pl oes the "Ty of OPE hate ir mt eli cara eaee ot ott bend ain ‘Tultncc sau ng gn emcee ee, tevin ape Co Te a ely unr he wih he pai e em Sete oe tov ape ty “ety aan nth ei ta ne Spine With “Phin pepe ne ben hts Deecnain shee Wk etn ise i "The paraneter Gn, function of the difference between Ube wetal wack Petar ore fia oe anne permittee are, ih abe asa pei Co Sarin "in i ih the enon ee ety ey at the a gare th run toscare wea| ei he en ee te a ‘Tattoos Pat “he oti tt te whe day maging, ‘ithe ntandacer pe | ea ate Te ot a tie sae See i ot 08 a ie ee “| ‘Rol sn ate oti ‘Tecnica ta he pa Fibonacci nea 19. mponran covaraea Ano sTaNoaRDMorarons were met ig ee an al ctf Ore ini ren Suter pa a Dticcs bine By S6U Brim w a pew || nee M2 Ca ear tin of a nt MOS et sow frepesicy ETN fom ae a 1 - — [ke se a ded =] ita ater tang? so a ty po tw neom a Ose apc =| (8 rem tii (©) ropeion 2d [Fi nd wo cons inte Sage tin of rm MOS opti Seo In the potloms of he ec, we wl sn the paraceter g Indo ane teri Far Sion Sion nde atin, Fer Alani Sieos de ont, 4-30 Dict stat fr Son oi, 19oe. (eemend SIR Rani Ca oe = 4 a tin a Ma 0 tr ey ‘Conon Daa ar a 18 269 Wi eet a i cr ae ‘What isthe type of semiconductor and mode af basing ? ()aamv )-omev ies ae sete ot ae tn ee (Common Dats For. and 6 scien Se nen See ta etn wees Qaeewar (A) 0.30 ne) 9x 10m Common Dats For Q. 12 and 13 atm mx | “Te mana pce hare deat |u| (aya 10m (By 16% 19" cjomt (o)4x 10m" (0) 48x 10*Cjemt Common Data For Q. Yan ‘amin pp dy onda of MOS rst wh he eis ca a4s9 Thad cin, we Gyasix oF (Bua x "Fe (Qaaxiertiew (0) 168 10°F! Uivaasx toon ‘®) 0305 (© 002 (0) 1885 10"%emesse The laimun cpio, Ca went mac apt abe e peat (Oeil 6301? con Da Fo 15 018 cto ‘Sten ad temic te i nape pore (0 eine mae (oyrs554 wash ca a7 What th quae rp ade hare deity etoile a et max 0%? (05% 10m" @) 4x er "Te iat and spac (ayn x0 "Fe 1) 89 (casi x10 *Fjea? (5698 men Dae i een st ew (0 rea ae (on ae wane (By Acuna (Dat ose (Ayreon de (2) eet moe comm pa 201 , asl ee i aie ca anae ‘Thin crv nang pein) oF OFvy be a Se ee TY atte Sent eet hms ema ct mln wt in ig Sa nn yo mins a ne a et, wane 2 oma Dat 311 gis ‘i yt ape eet Guse st Rae mttaer gue tse tein spunea ears 8 Ccomaom Dats For Q. 70 28 Fp REET cee ll (a) =. (f) ~0a2V | 1 | nr waite aera ee eee ae th sav e 408 | (00 (D) -050¥ ee CE ald | wea sae What the vale of No? . ca saan Wish he ing ety he wag en crening heli AOC) etn (Dg), alsin (NV) ii we | es ne in ut mg of rE (ato juve y, ta} me NaeBEF May ee tn oo nese ng ne ane oe aE MORSE, | we Delete Wachee (aehde acess abate Pipe avs the dnc coy tad dng fra al oso |" cat T= om ota Yeoh Noe tht By Bat tn SS, coast Win he ve of tie potent (6 iwoay ‘tb -o3v (osv oy thea a (i 87 jon {o} 07 (5 o10pm (© o7040 ea star Re te le of Y= 06, wt I the wage cop (86. ¢ y side? iosv 056 (osv @yosv af Tone aa he MOC gt ial ore ee (ame (0) cart em tones (aja ioe (0) Nana hea tg art spn ie nf Ae Semana am Hest me ee Se Sein eh wt (Braet De {Chee er ir et De (0) New cc in pers ise wise ©) a6 (yee (ositm 046mm (san nme mn Data Q ont #24 Co MOS wc ih pg nad We See tm rn me HOSIEE wy iiss dala, sr A22 Caer pipe am MOS epon L weet eked ta ti Ne then eK wl Cet Nat ntheBa yanv @anv soe tn amv aay wa ow ‘tite Te 2 ox oo igen Common Das Fae Qt 38 com it or amd STi “OS Reto ete oem 4g erm sigh ee) Gos (B) s95mA (mama mo | mss Wha ein ae vay G8) ayia! ean 4 A ed Ne ten fr ax Atm ie ci, (ama (arma Et Nymeth re Say» Qoereiwent | arene (a)80mA (6) 42 mA ams 42 Th Band ot wile (msm (Doma not wt eth hl tag (8 28)”Teme eae Te ctn rian ae in fine ow ‘al “| ee an4 What the pets ata (a) es 2236 Wat the veh ction prwetatin wAN ves 4208 As Mos jchsoel MOSFET. ine an savin creas tars ovate OT Ve ence oe Pee Gk rnb to aaron rp, the rei atl oat Sih Lema nten Vass SV. The roel W/E a ues 220 An ea phone) MOSFET bas an neon, cre, molly Siem aretha vege Up =~ 076 Vad ee kt Lao We el nth eration rein, the ei tel et EUR} M eink hon var=8 WT raed with og (HE ve Sei in oar an oth et en Wen roe seedy sitet i oe (Common Data For QF py pie Caaahe Neen, Pan iotom* wk vue A cm . Geckos eed ” ‘commen ai or Qa Conair u et tna MOSFET wth» withing oo ai atm nm ee eves sce Wht te cen a of me as) aS We cocnn epi om oe am 3 ‘ont 23 comma eat caterer faa om ETD eset cre acme in ons sans Tew por dit a he i soma anti ne MOSFET a et digs => reed wage of Ye 078 Wha he mina = SHS ei Se eer esis cast smhewc caer spews 4281 tna me MOS dv, mann at eg 20 ry trae apie tno eA et ea ae ele ay ees 238 Operate (if rn th megs 810 doh lt Seam AL tie t pae ota tn wis atecleae, ‘Pnehnaam cement wa SBD ence pent rely {Common Data For 2540.26 eet ed meee memos ves 4228 Fg, = the the tin wh) wil Wt the aloe of En Vem) en $= 6 7 an ot MOS. 3 10% wa eh te ome ‘Comson Data For Q 28 1030 de del -hne) MOSFET tied ot T= S00 hci by ays fea and ne = 00a Vie (sued idan of Vo) ues saat Want th lo sl Vag) (vot) 7 ‘ues 2229 What i th lt of startin cent (nm) a MOSFET I Vs=2¥7 oes 2258 What the vale of tamcondctane g(a) I Yr=2V 7 Conon Date 3132 ‘A scmplewestar po al »-haml and g-chanel MOSPET ae tobe Seat stant pacer amet a agar mn hoe ae vo #29 Wha te nae rh pm dre) e251 Wht eet me elie? ela a, b= nem eV a Aa TT ete a a aS et arith tm te esi se ct om us sat An NOSTET om wh eves 6227 Aang hat he al a te a) rev er eins ‘one eeSa Et Sess ea | Boal = Go ipP and Yo= 25 ath pont iy Ps) tne he CMOS fee cesium, oaem ae som Sun yam {ee mi a ihe ak qn 30H, eign ne Gun Fo Fle ‘What soul channel wh (im) (tonne MOSFET insta)? ves a213 An ide) nchatnel MOSFET bt the parades Pag ain ot r= than tole 8 ‘| | potent Vay Lh, t= OA, Vy = 08 tier ATE at cg 20. THEE iiypiosres (eho (0) hat) co 122 chain ina MOSFET by he apni pe | SE lt Ww tee, Yeo omy reo co 453, Whee pe nin SMOSPET pti, id et (ahem mae "iy taco {Chabert ate (Dinar tywrane enor (oeeate (Oya be pores Wt fe ring eae mgt vari 0 pation of (ay Tome de ‘out (ey mee oe (0) MOSFET ant tan oe Whose (0 PS dete (Ch aml da our | rte pty of ein eee ha | sas yutte hy ini | (ayant ois (chamceouec (Dynes el piecea Wierda Twnoseer (ourer (0) Pat Ait he orn en be intl Pt tl gg fore (o) bon Er aot MOSFET (oy moseer {D) note JPET or MOSFET ARTS ee td msc Ns des pnts gly apd x ower ad dn (yb dre peut nd ey dopa sure add {Dy doped wate Hy oped wore da Ose ‘ena {cheat ae (0) oan a above Gee move (om {D) mse md vale Wich af te oboming ev a sli ie et (A) NPR testor (2) unm diode (oarer (o) moses? vise qetentnasn tecnicos dl (4) stor (0) inde (©) exper (oyster, ~~ (0). ge BE (hinder ca s807 Then te (A) (Gmina opt mm yagi See (By cue tae dre (Choc tg int ee Dadom ii rane (rare {el mmante (Dpaletime Pe fetta ewe at et (eye ef wae st ot eae an cet ee {D) nm ne sa OSYE, wal te i wea oie ee oa {eyes roe (ey cong te tte oc {Dy wing tine teeee J > = weet (iinet ue ne tie = se {S)mncg thin comin = (Cj ot er | SOLUTIONS 5.1 | (Dpto te ota on gue ine OEy_| = = | aaa oo (Gren oa aon pn mt Te ie cy oe See int Seema cena Siena cameo ame mn pe cpr I